Abstract: A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The converted portion constitutes a photodetector integrated with associated superconducting leads.

Abstract: A process for etching with a scanning tunneling microscope on both a single crystal and a thin film of high temperature superconductor is disclosed.

Abstract: A method for producing a structured layer of a first material having at least one recess of a predetermined geometrical shape on a substructure formed of at least one second material that includes a metal oxide superconductor material with a high transition temperature which is sensitive to solvents containing acids includes the steps of: forming a first composite by applying a varnish layer to the substructure which is soluble in a first solvent that does not attack the substructure such that the varnish layer has a structure corresponding to the structure of the structured layer of the first material to be produced; cold depositing on the first composite an auxiliary layer of a third material that is soluble in a second solvent which does not attack the first and second materials; forming a second composite from the first composite by removing with the first solvent the varnish layer along with a part of the auxiliary layer resting thereon; applying a coating layer of the first material to the second compos

Abstract: A superconducting circuit board is provided comprising a sintered alumina board containing more than 99% by weight of alumina and an interconnection pattern of an superconducting ceramics formed on the alumina board. Adhesion of the interconnection pattern to the alumina board is improved by an addition of Ti or Si coupling agent to a paste for forming the interconnection pattern. The use of copper powder in place of copper oxide powder as an ingredient forming a superconducting ceramics in the paste is advantageous for printing and obtaining a uniform superconducting ceramic pattern.

Abstract: A method is disclosed for fabricating grain boundary junction devices, which comprises preparing a crystalline substrate containing at least one grain boundary therein, epitaxially depositing a high Tc superconducting layer on the substrate, patterning the superconducting layer to leave at least two superconducting regions on either side of the grain boundary and making electrical contacts to the superconducting regions so that bias currents can be produced across the grain boundary.

Abstract: A method for patterning precursor film, a product thereof, a method for preparing a patterned ceramic film and a processing workpiece. The method for patterning precursor film includes the steps of depositing a blocking layer over the precursor film, patterning the overlaid blocking layer to uncover portions of the precursor film, irradiating the patterned blocking layer and uncovered portions of the precursor film with a beam sufficiently energetic to radiation modify the full thickness of unmasked portions of the precursor film and insufficiently energetic to radiation modify portions of the precursor film covered by the blocking layer, and developing the precursor film. The blocking layer has a lesser thickness than the precursor film, but is sufficiently thick to block an irradiating beam having the minimal energy necessary to radiation modify the full thickness of the precursor layer.

Abstract: In a method for manufacturing a device having a film of high temperature superconductor, a copper substrate is used in the electrophoretic deposition as a cathode on which fine powders of superconductor should be deposited, and the fine powders deposited on the substrate are fired in the conditions that they are sintered partially.In other methods for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, and a minute pattern of fine powders is deposited according to the pattern of the cathode. Then, the fine powders are fired to form a superconductor film. Such a desired pattern of the cathode is formed by the patterning of a film of an electrically insulating substrate. Such a desired pattern of the cathode is also formed by the patterning of an electrically insulating material, applied to an electrically conductive substrate.

Abstract: Methods for preparing highly conductive polymers in water-in-oil microemulsions are disclosed. The invention is particularly useful for preparing conductive polyaniline in the forms of fine particles, membrane composites and coatings on electrodes. The composites and the coatings of the polyaniline have been shown to exhibit conductivities in the range of 150-400 S cm.sup.-1.

Abstract: A superconducting ceramic film is deposited on a substrate by sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is irradiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.

Abstract: A method of forming a superconductor pattern in which at lest a pair of electrodes is formed on a substrate in spaced, facing relationship nd an oxide superconductor thin film having a unit lattice which assumes a laminar structure then is formed on the substrate, extending between and contacting the electrodes. The superconductor pattern obtained by this method suffers less degradation of the superconductor thin film, in comparison with that of patterns formed by the prior art methods, and the decrease of the critical current density as a function of increasing temperature is extremely small.

Abstract: A method of forming a superconducting circuit comprises the steps of preparing a ceramics body which is changed from a non-superconductive phase not superconducting at the working temperature into a superconducting phase superconducting at the working temperature by heat treatment and performing the heat treatment on a part of the ceramics body by applying a laser beam to the ceramics body to change the same into the superconductive phase, thereby to form a superconducting circuit consisting of the superconductive phase and the non-superconductive phase on the ceramics body.

Abstract: An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.

Abstract: A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.

Abstract: A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.

Abstract: A method for forming a superconducting circuit is disclosed, comprising the steps of forming a mask pattern on a superconducting layer, forming a covering layer, containing a modifying element for superconductor, on the resultant structure, diffusing the modifying element for a superconductor, which is contained in the covering layer, into the superconducting layer to modify a corresponding location to a nonsuperconducting layer. A method for forming a multi-layer superconducting circuit is also disclosed, comprising sequentially repeating the same steps as set forth above over a substrate.

Abstract: A method of forming a fine groove on a superconducting thin film. A superconducting oxide thin film is formed on a MgO substrate, and a damaged layer is formed thereon by irradiating the superconducting thin film with focused ion beams to such a degree that not sputter is generated and the crystalline structure of the superconducting thin film is disturbed. The damaged layer is then removed by treatment with a strong alkali such as KOH. Thus, a fine groove is effectively formed. By inserting an oxide layer between the substrate and the superconducting thin film, a Josephson junction device suitable for superconducting transistors is produced.

Abstract: A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.

Abstract: A superconducting pattern formed from a superconducting ceramic film is illustrated. The pattern is made in the form of a coil which is embedded in an insulating ceramic film. The insulating film is made of a ceramic material whose thermal expansion coefficient is approximately equal to that of the coil.

Abstract: A process for preparing high-Tc superconducting integrated circuits by using a method in which a thin surface layer of non-superconducting tetragonal YBa.sub.2 Cu.sub.3 Oy wafer is selectively transformed into a superconducting orthorhombic phase by oxygen-diffusion. The superconducting orthorhombic islands are surrounded with non-superconducting tetragonal phases and these are electrically isolated from each other. The process results in the formation of superconducting integrated circuits which are inexpensive and are high in quality.

Abstract: The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.

Abstract: A superconducting Josephson junction is created in high T.sub.c superconducting film, with a bridge connecting two superconducting banks, by subjecting the bridge to a tunneling electron current from a sharp electrode close to the bridge. The tunneling current alters the structure over atomic dimensions to create a weak link of length comparable to high T.sub.c coherence lengths so as to permit phase coherent Cooper pair current flow across the weak link.

Abstract: In a method of manufacturing a superconducting device which has a first thin film of oxide superconductor material formed on a substrate and a second thin film formed on the first thin film of oxide superconductor material, after the second thin film is deposited on the first thin film of oxide superconductor material, a multi-layer structure formed of the first and second thin films is patterned so that a side surface of the first thin film is exposed. In this condition, the whole of the substrate is heated in an O.sub.2 atmosphere or in an O.sub.3 atmosphere so that oxygen is entrapped into the first thin film of oxide superconductor material. Thereafter, the patterned multi-layer structure is preferably covered with a protection coating.

Abstract: A method of forming a patterned in-situ photoconductive film on a substrate including providing a patterned photoresist layer on upper and lower metallic layers formed on a substrate. The patterned photoresist layer is used to form an opening in the upper layer. The pattern in the upper layer thereby has an opening having a geometry substantially similar to a desired pattern of photoconductive material to be formed on the substrate. A portion of the lower layer is removed to form cantilevered regions of the upper layer adjacent to the opening. Superconductive material is then deposited on the substrate by directing the material through the opening at an angle generally perpendicular to the substrate. The superconductive film on the substrate within the lower layer is coated with a polymer. The upper and lower layers and all superconductive material on those layers are removed to leave the polymer-encapsulated superconductive material on the substrate.

Abstract: Disclosed herein is a method of and an apparatus for fabricating an oxide superconducting wire which comprises a tape-type long base material and an oxide superconducting film formed thereon. The oxide superconducting film is formed by laser ablation of applying a laser beam (2) onto a target (4) while translating a long base material (6) along its longitudinal direction and depositing atoms and/or molecules scattered from the target (4) on the base material (6).

Abstract: A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precursor elements on a substrate; 2) patterning the metal film; and 3) oxidizing the metal film to form a superconductor film. Because the process separates the metal precursor film formation, patterning, and oxidation steps, each of the steps can be individually optimized.

Abstract: A method for generating repeatable and reproducible crystallographic grain-boundary junctions is provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate is etched by an anisotropic etchant to provide a "V"-groove in one face, and an epitaxial superconducting film is grown on the faces of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points of intersection of the faces with each other, or with the faces and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices.

Abstract: A method for manufacturing a superconductive multilayer circuit has a first thin film forming step for forming a thin film, which is composed of superconductive material or a similar material thereto, on a substrate, a first circuit layer forming step for forming a superconductive circuit by discharging a specific component from a predetermined part of the thin film or implanting the component in the thin film, a second thin film forming step for forming a thin film, which is composed of a superconducting material or the simulant thereto, on the first circuit layer, and a second circuit layer forming step for forming a superconductive circuit by removing a specific component from a predetermined part of the thin film or implanting the component in the thin film.

Abstract: A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.

Abstract: A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.

Abstract: A method is disclosed for forming a patterned oxide superconducting film wherein a selected region of a ternary metal oxide superconducting film is irradiated in a controlled atmosphere with photons so as to become non-superconductive.

Abstract: In a method of patterning superconducting thin films such as YBaCuO, based on the inhibition of superconductivity by intermixing an impurity, such as silicon, with superconductor material, a thin film of silicon is formed on a magnesium oxide substrate and then patterned, by laser direct-writing for example, to correspond to a desired pattern of superconducting lines. Multilayered YBaCuO thin films are then deposited over the patterned silicon film and annealed using rapid thermal annealing at a temperature of 980.degree. C. maintained for a period in the range from 30 to 90 seconds. The rapid annealing results in intermixing of silicon and YBaCuO in regions of the film between the lines of the pattern which, in turn, causes these regions to become insulating, and at the same time causes the YBaCuO film over the line pattern to become superconducting.

Abstract: A method of forming a superconductive metal oxide film on a substrate is disclosed. The method comprises depositing a metal layer on the substrate and heat treating the metal layer in an oxygen-containing atmosphere such that the oxide film is formed therefrom. The metal layer is deposited such that it is substantially free of reactive constituents, e.g., oxygen and/or fluorine, and such that it contains all the metal constitutents that are to be contained in the oxide film. Advantageously, the metal layer is deposited such that the various metal constituents (e.g., Y, Ba, and Cu) are substantially mixed. The inventive method simplifies deposition control since the densities of the metal deposits are well known and constant, and permits relatively rapid deposition (e.g., by DC sputtering) since the targets are not subject to oxidation.

Abstract: Superconducting oxides in the A, B, Cu oxide ternary system, where A is yttrium or a rare earth and B is an alkaline earth, are formed as thin films on a substrate by a sol-gel technique.

Abstract: A method for production of a ceramic sheet includes the following steps: First, a pair of green sheets are prepared from ceramic material by the doctor-blade method. Each of the green sheets has first and second surfaces. The prepared sheets are placed one on the other and adhered to each other in such a manner that the first surfaces of the green sheets oppose each other. Alternatively, the second surfaces of the sheets may oppose each other. As a result, a united green sheet is obtained. A separating sheet is disposed on a side of the united green sheet. The united green sheet is rolled, with the separating sheet, around a core. The united green sheet, with the separating sheet, is sintered in a rolled configuration thereby producing a rolled ceramic sheet.

Abstract: A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.

Abstract: An improved method of manufacturing superconducting ceramics in the form of a thin film are described. The thin film is first formed of a superimposed structure composed of three films which contain a rare earth metal, an alkaline metal and copper respectively. Then the superimposed thin film is fired to convert to superconducting film.

Abstract: Disclosed is a method for fabricating an edge geometry superconducting tunnel junction device comprising two niobium nitride superconducting electrodes (14,28) and a magnesium oxide tunnel barrier (24) sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.

Abstract: A process for producing a superconducting thick film including steps comprising subjecting a powder mixture of oxides or carbonates of Ba, Y and Cu each having an average particle size of less than 5 .mu.m to preliminary sintering, pulverizing the preliminary sintered mass into a powder having an average particle size of less than 10 .mu.m, and then admixing the pulverized powder with an organic vehicle to prepare a paste which is applied on a substrate and is sintered finally. The preliminary sintering is carried out at a temperature ranging from 700.degree. to 950.degree. C., while the final sintering is carried out at a temperature ranging from 800.degree. C. to 1,000.degree. C.

Abstract: A jointed structure comprising at least two kinds of oxide superconductor having different melting points, higher melting point superconductor and one lower melting point oxide superconductor being alternately jointed. In this jointed structure, the lower melting oxide superconductor is used as a joint layer for the higher melting oxide superconductors. The jointed structure can be obtained by combining an Y--Ba--Cu--O oxide superconducting material and a Bi--Sr--Ca--Cu--O oxide superconducting material, or by combining two Bi--Sr--Ca--Cu--O oxide superconducting materials of different compositions and accordingly of different melting points. Large cylindrical structures used as, for example, a container for apparatus for biomagnetism measurement can be produced by jointing two or more divided cylindrical parts. In this case, the techique of the jointed structure of the present invention can be applied for jointing of the divided cylindrical parts.

Abstract: A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

Abstract: This is a structure of, and method for preparation of, molybdenum resistors in a superconductor integrated circuit. It utilizes a pattern superconductor film; applying a titanium film on the patterned superconductor film; and then applying a molybdenum film on the titanium film to provide a titanium-molybdenum, etch-stop interface; applying a patterned resist film on the molybdenum film; etching the exposed molybdenum film to expose a portion of the titanium-molybdenum, etch-stop interface; and oxidizing the exposed titanium-molybdenum, etch-stop interface. The titanium-molybdenum etch stop interface protects the patterned superconductor film and the support (including any other underlayers) and increases processing margins for the etch time.

Abstract: In a device wherein a region which includes a superconducting weak link or a Josephson junction is irradiated with light or an electromagnetic wave so as to detect the light or an electromagnetic wave on the basis of the change of a superconducting critical current or an output voltage; a light-sensitive superconducting device characterized in that the surface of a superconductor lies in contact with a photoconductive semiconductor in at least a part of the whole of the region which is irradiated with the light or the electromagnetic wave.

Abstract: A manufacturing method of Josephson devices is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.

Abstract: A superconductor and a method of producing the same include a supporting substrate and a superconducting oxide ceramic material applied to the supporting substrate. At least one thermally and chemically stable intermediate layer is applied directly between the superconducting ceramic material and the substrate.

Abstract: A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precursor elements on a substrate; 2) patterning the metal film; and 3) oxidizing the metal film to form a superconductor film. Because the process separates the metal precursor film formation, patterning, and oxidation steps, each of the steps can be individually optimized.

Abstract: A method of producing a high temperature superconductor Josephson element for an electronic device or a photodetector comprising the steps of: forming a lower ceramic superconductor film on a substrate; forming an upper ceramic superconductor of a different system ceramic from that of the lower ceramic superconductor film on a portion of the lower ceramic superconductor and on the substrate; and forming an insulating layer (tunnel barrier) between the lower and upper ceramic superconductor films by an interdiffusion therebetween.

Abstract: A superconducting device operable at temperatures in excess of 30.degree. K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high T.sub.c superconducting material, the SQUID device being operable at temperatures in excess of 60.degree. K. High energy beams, for example ion beams, are used to convert selected portions of the high T.sub.c superconductor to nonsuperconductor properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.

Abstract: The present invention describes a method to produce a patterned superconducting solid preferably as a thin film. Unsaturated organic acid metal salts of suitable metals are dissolved in an organic solvent, mixed thoroughly and cast as a film on a substrate. The concentration of these organic carboxylate metal salts is adjusted such that a superconducting metal oxide ratio is obtained upon pyrolysis at temperatures up to 1000.degree. C. with subsequent slow cooling. A pattern (mask) is placed over the film and the film is irradiated to polymerize and crosslink the exposed portions. The unpolymerized and uncrosslinked portions are removed usually by using selective solvents or solvent mixtures. The solid remaining is heated in oxygen or air to about 1000.degree. C., which removes the organic portions and leaves metal oxide residue. The metal oxides are then cooled slowly and annealed to produce the patterned metal oxide superconducting materials.

Abstract: The present invention relates to an electron beam coevaporation method of preparing an oxide superconducting film on a silicon or an aluminum oxide substrate at a temperature below 600.degree. C. without the need for post-annealing, which comprises evaporating metallic superconductor precursor components onto a heated substrate from individual evaporation sources while directing oxygen plasma over the substrate surface wherein the evaporation sources and the substrate are located in two different vacuum chambers, a differential pressure is maintained between the two vacuum chambers during deposition so that the lowest pressure is at the evaporation sources, an intermediate pressure in the vacuum chamber surrounding the substrate and the highest pressure at the substrate surface.

Abstract: A solution for forming a superconductive thin film prepared by dissolving a mol of a compound selected from group A consisting of alkoxides and alkoxyalkoxides of a rare earth metal element; b mol of a compound selected from group B consisting of alkoxides and alkoxyalkoxides of Ba, Sr and Ca; and c mol of a compound selected from group C consisting of alkoxides and alkoxyalkoxides of Cu in e liter of a compound selected from group E, a solvent selected from alcohols together with d mol of a compound selected from group D for inhibiting hydrolysis action such as an amine, a ketone and a glycol, such that the following relationships:0.1.times.(a+b+c).ltoreq.d.ltoreq.3.times.(a+b+c)and0.01.ltoreq.[(a+b+c)/e].ltoreq.3can be satisfied.