Abstract: A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

Abstract: The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.

Abstract: A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device.

Abstract: A method for preparing a CIS (Cu—In—Se) compound includes (S1) producing a plurality of first composite particles having an indium selenide outer layer physically coupled to at least a part of a copper selenide seed particle surface or a plurality of second composite particles having a copper selenide outer layer physically coupled to at least a part of an indium selenide seed particle surface; and (S2) making a CIS compound by thermally treating composite particles selected from the group consisting of the first composite particles, the second composite particles and their mixtures. This method may prevent loss of selenium, which inevitably requires selenium environment, and also improves dispersion, coupling and reaction uniformity for the formation of a CIS compound.

Abstract: A preparation method of a CIS-based or CIGS-based thin film for a light absorption layer of a solar cell, which uses a paste prepared by mixing precursors of Cu, In, Se, and optional Ga in a solvent, minimizes the raw material loss, does not produce a toxic gas during the process, and is suitable for producing a large scale film at a low production cost.

Abstract: Disclosed herein is a method for producing a light-absorbing layer for a solar cell that is capable of economically and efficiently forming an I-III-VI2 compound thin film used as a light-absorbing layer for a solar cell. The method comprises (a) depositing a single precursor including Group III and VI elements on a substrate by metal organic chemical vapor deposition (MOCVD) to form a Group III-VI or III2-VI3 compound thin film, (b) depositing a precursor including a Group I element on the III-VI or III2-VI3 compound thin film by MOCVD to form a I-III-VI compound thin film composed of Group I, III and VI elements, and (c) heating the I-III-VI compound thin film under a Group VI element-containing gas atmosphere or depositing a Group VI element-including precursor on the I-III-VI compound thin film by MOCVD to form an I-III-VI2 compound thin film.

Abstract: The invention provides a film having a composition AgwCu1-wInrGaxKySe2(1-z)Q2z; wherein K is Al or Tl or a combination of these; Q is S or Te or a combination of these; w is in a range from 0.01 to 0.75; x is in a range from 0.1 to 0.8; and r, y and z are each independently in a range from 0 to 1, provided that r+x+y=1. Methods of making the film can include processing temperatures not exceeding 500° C.

Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.

Abstract: A solar PV module comprises an array of serially interconnected spaced PV solar cells on a common substrate, each cell comprising a 1st electrode on said substrate, an active PV film on the 1st electrode, a 2nd electrode, at least one of said electrodes being light transmitting and wherein the 2nd electrode of the nth solar cell of the array is connected to the 1st electrode of the succeeding, (n+1)th cell of the array via a portion of PV film which has a substantially higher conductivity than the remainder of the PV film. The novel structure of the present invention is achieved by substantially increasing the conductivity of a continuous light absorbing PV film in the area of desired electrical contact by doping the film in the desired areas.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.

Abstract: The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising mixed compounds of the formula (I): (Zn1?xMnxTe)1?y(SiaTeb)y ??(I) where x is from 0.01 to 0.99, y is from 0.01 to 0.2, a is from 1 to 2 and b is from 1 to 3.

Abstract: An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.

Abstract: The tin-free air side of each of float-processed soda-lime float glass substrates is quickly and accurately distinguished, and the substrates are arranged, with the air sides facing upward. CIS based thin-film photo voltaic devices are formed on the air sides to improve conversion efficiency and yield and reduce production cost. A surface of a glass substrate is irradiated with ultra violet lights. When fluorescence occurs, this side is judged to be the tin-containing float side B (P1) and a tin containment mark is put thereon (P2). When the upper side is the air side A not bearing a tin containment mark, this substrate is subjected as it is to a cleaning/drying step and to the formation of a CIS based thin-film photo voltaic device on the air side A. When the upper side is the float side B, this substrate is turned over (P3) and then subjected to a cleaning/drying step (P4) and to the formation of a CIS based thin-film photo voltaic device on the upper side, i.e., the air side A (P5).

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A photovoltaic device may be provided. The photovoltaic device may include a first energy absorbing surface and a second energy absorbing surface being substantially parallel to the first energy absorbing surface. The photovoltaic device may include a third energy absorbing surface being substantially perpendicular to the first energy absorbing surface and the second energy absorbing surface. Each of the first energy absorbing surface, the second energy absorbing surface, and the third energy absorbing surface may be configured to convert energy from photons into electrical energy. The photons may be impringing one or more of the first energy absorbing surface, the second energy absorbing surface, and the third energy absorbing surface. The first, second, and third energy absorbing surface may be oriented in manner to cause the photons to bounce between two or more of the first energy absorbing surface, the second energy absorbing surface, and the third energy absorbing surface.

Abstract: In a radiation detector, electrodes are provided on both sides of a photoconductive layer for recording. When the photoconductive layer for recording is irradiated with radiation during application of a predetermined bias voltage between the electrodes, electric charges are generated within the photoconductive layer for recording. Then, the generated electric charges are detected as an electric signal by the radiation detector. As the material for the photoconductive layer for recording, amorphous selenium having a coordination number of 1.95±0.02 is used.

Abstract: A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer.

Abstract: The invention relates to a photovoltaic cell and to a process for producing a photovoltaic cell comprising a photovoltaically active semiconductor material of the formula (I) or (II): ZnTe ??(I) Zn1-xMnxTe ??(II) where x is from 0.01 to 0.

Abstract: A process for large-scale production of CdTe/CdS thin film solar cell the films of the solar cells being deposited as a sequence on a transparent substrate, which comprises the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; depositing a film of CdS on the TCO film; treating the CdTe film with Chlorine-containing inert gas; and depositing a back-contact film on the treated CdTe film. The Chlorine-containing inert gas is a Chlorofluorocarbon or a Hydrochlorofluorocarbon product and the treatment is carried out in a vacuum chamber at an operating temperature of 380-420° C. The Chlorine released as a result of the thermal dissociation of the product reacts with solid CdTe present on the cell surface to produce TeCl2 and CdCl2 vapors. Any residual CdCl2 is removed from the cell surface by applying a vacuum to the vacuum chamber while keeping the temperature at the operating value.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: Disclosed herein is a method for modifying the surface of a counter electrode. According to the method, the surface modification is achieved by treating the surface of a counter electrode with a polyethylene glycol derivative having a pendant group at one end. Also disclosed is a counter electrode whose surface is modified by the method. The electron transfer rate at the interface between the counter electrode and an electrolyte layer of a photovoltaic device is increased and the affinity of the counter electrode for the electrolyte layer is improved, resulting in an improvement in the power conversion efficiency of the photovoltaic device.

Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

Abstract: The invention relates to a method of depositing Hg1-xCdxTe onto a substrate, in a MOVPE technique, where 0?x?1; comprising the step of reacting together a volatile organotellurium compound, and one or both of (i) a volatile organocadmium compound and (ii) mercury vapour; characterised in that the organotellurium compound is isopropylallyltelluride. The invention also relates to devices, such as infrared sensors and solar cells, that comprise Hg1-xCdxTe materials.

Abstract: A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.

Abstract: A method for depositing a coating onto a solid substrate for the fabrication of a functional layer in a solar cell device wherein the functional layer is used as an anti-reflection layer, an active layer for photon absorption and charge generation, a buffer layer, a window layer, or an electrode layer.

Abstract: Flexible belts, and electrophotographic machines that use such flexible belts, that having embedded sensor fibers that run across the belt's width. Such sensor fibers enable sensors located along the side of the belt to sense belt position and/or motion.

Abstract: Materials in bulk and film forms are prepared from fine particulate precursors such as single-phase, mixed-metal oxides; multi-phase, mixed-metal particles comprising a metal oxide; multinary metal particles; mixtures of such particles with other particles; and particulate materials intercalated with other materials.

Abstract: A method of manufacturing copper-indium-gallium-diselenide (CuInxGa1-xSe2 or just CIGS) photovoltaic devices using elemental selenium and without requiring complex codeposition or requiring the use of toxic H2Se gas. A precursor taking one of several forms is deposited onto a substrate having a back contact. A first precursor includes copper, gallium, and indium, the latter of which is deposited in the presence of a selenium flux, all deposited in that order. The second precursor includes indium deposited in the presence of a selenium flux, copper, and gallium, deposited in that order. Next, the precursor is selenized using one of two techniques: an indium-gallium removal technique and a copper-top technique. In both techniques, the precursor is heated to and held at a first selenization temperature, most preferably 450° C., and then heated to and held at a second selenization temperature, most preferably 550° C.

Abstract: A method for manufacturing a thin-film solar cell substrate of group IB, IIIB and VIB elements of the Periodic Table, by using an apparatus for depositing selenium (Se) on the thin-film solar cell substrate. The apparatus has a base with gas inlet and outlet pipes. A bell jar is placed on top of the base with an O-ring interposed between them. A thin-film solar cell precursor and Se powder are placed in a recess formed in a lower heating jig, and the lower heating jig is positioned on the base. An upper heating jig is placed on top of the lower heating jig. The upper heating jig is vertically moved by a vertically actuating mechanism. The upper and lower heating jigs are heated under vacuum so as to diffuse Se to the thin-film solar cells, whereby a CuInSe2 alloy film is formed.

Abstract: A method for producing a multilayer plate for X-ray imaging is disclosed. As the first step in the method, there is provided a plate of a substrate. Then, there is deposited on this substrate a thin film of amorphous arsenic triselenide by thermal evaporation under reduced pressure, followed by condensation on the substrate. A thick photoconductive film of doped amorphous selenium is then deposited by evaporation and condensation on the thin layer of amorphous arsenic triselenide. This thick photoconductive film can also be deposited directly onto the substrate. Then, a thin film of alkali doped selenium is deposited onto the thick photoconductive layer by evaporation or co-evaporation and condensation, and a conducting biasing electrode is formed on top of this alkali doped film.

Abstract: An apparatus to align the deposition of scintillator material on a radiation detector array includes a cover mask assembly configured to be positively positioned on a detector array and underlying pallet assembly to provide proper alignment of the mask with the array so that the active portion of the detector array may be coated with scintillator material without having the scintillator material on the adhesive and electrical contact portion of the detector array. An adhesive rim is disposed around the periphery of the active portion of the array and sized to provide the desired precise alignment of the mask over the detector array and form a seal with the array substrate and the pallet assembly to prevent migration of the scintillator material beyond the active area to be coated.

Abstract: A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.

Abstract: A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lime float glass. A light absorbing layer is formed by forming a back electrode on a soda-lime float glass substrate, forming on the back electrode layer a stacked precursor film including a copper-gallium alloy layer and an indium layer by sputtering, and then heating the precursor film in an atmosphere of selenium and/or sulfur.

Abstract: A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.

Abstract: An apparatus for forming I-III-VI.sub.2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI.sub.2 thin-film layer and a vapor source of an element of group VI of the periodic table are placed. The precursor and vapor source are heated under vacuum to form the I-III-VI.sub.2 thin-film layer. The reaction chamber is divided into a reaction compartment A having the precursor placed therein and a reaction compartment B having the vapor element of group IV placed therein. A communication channel C is provided between the reaction compartments A and B, and a heating unit controlled by a temperature control unit is provided exterior to each of the reaction compartments A and B.

Abstract: An improved process for producing a light-absorbing chalcopyrite film is disclosed, which comprises the steps of: applying at least one solution containing at least either of (a) an organic compound of a metal in Group 1B of the periodic table and (b) an organic compound of a metal in Group 3B of the periodic table on a substrate at least once to thereby form a thin film containing the organic compound (a) and the organic compound (b); heating the thin film in a reducing or inert gas atmosphere to convert the thin film into a thin metal film comprising the Group 1B metal and the Group 3B metal; and heating the thin metal film in an atmosphere containing either an element in Group 6B of the periodic table or a compound thereof to thereby convert the thin metal film into a thin chalcopyrite film.

Abstract: A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3.

Abstract: A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element.

Abstract: Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.

Abstract: Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Abstract: A substrate-independent manufacturing method for a solar cell with chalcopyrite absorber layer (4, 5) is proposed wherein a desired alkali content is obtained in the finished absorber layer by dosed addition of Na, K, or Li during the manufacturing process. An additional drive-in of alkali ions from a potentially alkali-containing substrate (1) is prevented by providing a diffusion barrier layer (2) between substrate and absorber layer.

Abstract: To produce a polycrystalline, single-phase compound semiconductor layer of the chalcopyrite type ABC.sub.2, it is proposed to deposit, on a substrate, a layer structure which comprises a plurality of layers and which contains the components in elemental form, as an interelemental compound or as an alloy, the component C being present in stoichiometric excess. In a rapid annealing process with a heating rate of at least 10.degree. C./s to a processing temperature of at least 350.degree. C., the layer structure is converted into the compound semiconductor ABC.sub.2 even after a few seconds, the gas exchange being limited by encapsulation of the layer structure, with the result that an evaporation of the most volatile components is prevented. Highly efficient solar cells can be produced from the semiconductor.

Abstract: A chalcopyrite compound, for instance, CuInS.sub.2 or CuInSe.sub.2, is prepared by subjecting a thin film containing copper metal, indium metal, and an indium compound or a compound which contains both indium and copper, selected from the group consisting of oxides, sulfides and selenides, with heat under a reducing atmosphere containing at least one of the Group VIb element or under an atmosphere containing a reducing compound of at least one of the Group VIb element, thereby converting said thin film into a chalcopyrite compound.

Abstract: A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Abstract: A method of manufacturing a solar cell, comprising the steps of forming a layer of n-type compound semiconductor, a layer of p-type compound semiconductor, and an electrode layer on a glass substrate, wherein at least one of said steps of forming a layer of compound semiconductor layer comprises preparing a paste by mixing a semiconductor raw material and a viscous agent, applying said paste to said substrate, drying said paste to harden it, and firing the dried paste, and vibrating said substrate during or after the application of the paste, to remove the bubbles in the paste, resulting in a semiconductor layer which is smooth, dense, and having good adhesion, thus realizing a solar cell with improved and uniform characteristics.

Abstract: A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor.

Abstract: Novel compound semiconductors are of the general formula, X.sub.5 YZ.sub.4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.5 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

Abstract: Processes and apparatus for uniformly coating discrete substrates by application of a controlled volume of fluid per unit surface area of a substrate. In one aspect, the invention provides a process comprising providing a fluid reservoir; and flowing fluid from the fluid reservoir without substantial interruption through one or more fluid applicators, the fluid applied with a controlled volume per unit surface area of the substrate, said fluid flow from the reservoir commencing and terminating to provide a fluid layer up to the perimeter of the substrate. The invention also provides fluid application apparatus which enable application of a uniform fluid layer, including apparatus that provides termination of fluid flow without fluid dripping or trailing of fluid.

Abstract: A process for producing a light absorption layer of a solar cell is disclosed, in which prior to heat-treatment, at least two of the following steps are performed in combination: (1) electrodeposition of a copper layer including selenium particles, (2) electrodeposition of an indium layer including selenium particles, (3) electrodeposition of a copper layer not including selenium, and (4) electrodeposition of an indium layer not including selenium. Control of copper, indium, and selenium contents becomes easier with this process.