Abstract: Methods for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520.degree. C. and 625.degree. C. is employed over a processing time t of between approximately 1/4 and 4 hours. The thickness A of the grown HgCdTe (15) is a linear function of processing time t. The mole fraction x of cadmium in the HgCdTe (15) is a linear function of temperature T and an exponential function of the mole fraction y of mercury in the source (3). The lower the relative amount of mercury in the source (3), the greater the relative amount of mercury in the end product (15), and vice versa. Any crystal plane and any axial orientation of the CdTe substrate (5) can be used without affecting the rate of growth of the HgCdTe (15), the single crystal nature of the HgCdTe (15), or the mirror-like finish of its surface.

Abstract: A process for preparing arsenic-selenium photoreceptors wherein the arsenic distribution in the photoreceptor, particularly at its top surface, is controlled within a preferred concentration range, which comprises controlling the evaporation rate of the arsenic-selenium alloy by means of a crucible weight sensing system to monitor alloy depletion rate and a cascade dual-loop feedback control system processing both crucible assembly weight change and temperature to modify resistive power input.

Abstract: Amorphous chalcogenide films substantially free from particulate and microstructure are formed on a substrate from solution. The solution contains a glass-forming chalcogenide compound dissolved in a non-aqueous vaporizable solvent, such as a low molecular weight amine, and is substantially free from particulate or crystallizable material. Film formation is effected by coating the solution onto the substrate in a non-vacuumized environment, and thereafter evaporating the solvent from the coating. The procedure is particularly useful in forming amorphous chalcogenide resists for photolithographic applications.

Abstract: A method of preparing a mercury cadmium telluride substrate with a cadmium elluride surface of less than 200 .ANG. to yield a surface exhibiting improved quality and smaller variation in the x-valve of a Hg.sub.1-x Cd.sub.x Te substrate for passivation and processing of the CdTe processed surface. The method comprises the steps of etching said Hg.sub.1-x Cd.sub.x Te substrate with a bromine methanol or bromine-DMF etch, quenching the substrate in methanol or DMF until the bromine is removed and rinsing in acetone and methanol to remove soluble residuals and drying immediately, coating said substrate with CdTe layer of about 1000 .ANG., polishing the processed CdTe layer by a contactless polishing means using a polishing solution of 50% ethylene glycol and 50% mixture of 2% bromine and 98% methanol wherein said CdTe layer is polished down to generally less than 200 .ANG.

Abstract: Process for obtaining a homogeneous layer of composition Hg.sub.1-x Cd.sub.x Te, comprising the steps of:subjecting a wafer formed by a layer of Hg.sub.1-x.sbsb.o Cd.sub.x.sbsb.o Te deposited by epitaxial growth on a CdTe substrate, x.sub.o being less than the desired value x, to a melting treatment,then rapidly cooling the wafer.

Abstract: A process for preparing layers with a superficial composition of Hg.sub.1-x Cd.sub.x Te comprising the steps of producing a wafer by forming a layer of superficial composition Hg.sub.1-y Cd.sub.y Te on a substrate of CdTe, y being less than the desired value x, and subjecting this wafer to a thermal interdiffusion treatment at a temperature of between about 350.degree. and about 750.degree. C., under such conditions that the layer of Hg.sub.1-y Cd.sub.y Te cannot decompose.

Abstract: There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.

Abstract: A process for preparing the surface of a metal chalcogenide. The metal chalcogenide is immersed in a suitable electrolyte. The electrolyte is selected such that the metal chalcogenide is relatively stable therein in the dark, but unstable as a photoelectrode under illumination. The metal chalcogenide is connected to another electrode; and the electrode is immersed in the electrolyte. The metal chalcogenide is illuminated to photoetch the chalcogenide thereby improving the surface electronic properties of the semiconductor.A process for the surface treatment of metal chalcogenides including immersing the metal chalcogenide in an aqueous solution containing Zn and/or Cr ions.

Abstract: An image sensor having a photoconductor array comprising tightly adherent CdS-CdSe or CdS-CdTe photoconductive solid solution thin film and having fast photoresponse speed and excellent spectral sensitivity characteristics.

Abstract: An ambipolar electrophotographic plate and materials used in the manufacture thereof including a photoconductive layer formulated of selenium, selenium-arsenic alloy or selenium-arsenic-tellurium alloy containing indium as a dopant which extends the range for electrons without noticeable deterioration of the long range for holes.

Abstract: A film type light receiving element and a method for producing such an element in which the electric current ratio for light and dark input intensities is large while the resistance of an optically transmissive electrode is made low. Belt-shaped metal electrodes and a photoconductive film are provided on a smooth surface of an insulating substrate. The optically transmissive electrode film layer is formed on the photoconductive film. A portion of the optically transmissive electrode film adjacent the photoconductive film has a high specific resistance while the remaining portion has a low specific resistance. To form the portion having a low specific resistance, the film is formed by sputtering in an oxygen partial pressure close to a value at which a minimum specific resistance is obtained while to form the portion having a high specific resistance, the oxygen partial pressure is set to a value higher than the value at which the minimum specific resistance is obtained.

Abstract: Process for forming a semiconductor finding use in solid state and PEC cells as a photoelectrode, comprising preparing a slurry of at least one semiconductor starting material used to form the semiconductor, a flux and a liquid vehicle; applying a layer of the slurry to an electrically conductive substrate; and annealing the layer. The semiconductor produced by the process and a photoelectrochemical cell including the semiconductor.

Abstract: A process is provided for the preparation of thin films of cadmium sulfide by deposition of cadmium sulfide formed in the thermal decomposition of an aqueous solution of cadmium ammonia thiocyanate complex, useful particularly in the preparation of thin cadmium sulfide films on electrically-conductive substrates useful in photovoltaic cells, and on thermally-conductive substrates useful in solar energy absorbers, for energy conversion systems.

Abstract: A double layer having a hetero-junction interface for a storage electrode of an electro-optical camera device is produced by vacuum vapor deposition of n-conductive cadmium selenide or cadmium sulfo-selenide onto a n.sup.+ -conductive signal electrode layer comprised of tin oxide. The cadmium material to be vapor deposited is admixed with a small amount of a glass additive, such as boron oxide, the admixture sintered in vacuum and thereafter the cadmium material is vapor-deposited onto the signal electrode without spattering. The resultant hetero-junction is substantially free of metallic cadmium and such double layer is particularly useful in a Vidicon target.

Abstract: A method of manufacturing a film type light receiving element in which the electric current ratio for light and dark input intensities is maximized. Metal electrodes and a photoconductive film are provided in the form of belt-shaped layers on a flat smooth substrate such as a quartz layer. An optically transmissive electrode film of a tin oxide compound is formed thereon in a magnetron type sputtering device. Utilizing the fact that the electric current ratio for light and dark input intensities of the light receiving element varies according to the oxygen partial pressure of the sputtering atmosphere in the sputtering device, the oxygen partial pressure is set close to a value at which the electric current ratio for light and dark input intensities is at a peak value.

Abstract: In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.

Abstract: In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.

Abstract: Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and a reducing agent at a concentration greater than 1 M and greater than 10 times the stoichiometric amount of reducing agent.

Abstract: Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and a highly soluble (i.e., greater than 1 M) organic acid in sufficient amount to reduce the oxidation state of at least one solute element of the spray solution after contacting the heated substrate.

Abstract: An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.

Abstract: Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and an agent in sufficient amount to change the oxidation state of at least one solute element of the spray solution after contacting the heated substrate.

Abstract: In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.

Abstract: The target comprises a transparent substrate, an N-type transparent conductive film formed on the substrate, a P-type photoconductive film formed on the N-type conductive film and a heterojunction formed at the interface between the N- and P-type films. The P-type photoconductive film contains selenium, tellurium and arsenic of which selenium and arsenic are distributed continuously from the heterojunction throughout the thickness of the P-type photoconductive film whereas the distribution of tellurium is spaced from the heterojunction and localized in the vicinity of the heterojunction. The total amount of arsenic contained in the P-type photoconductive film ranges from 2.5 to 6% by weight.

Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a smooth conductive substrate, preferably comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate, the cell further including a rectifying barrier layer. Preferably, the film is electrodeposited on the substrate surface with specific materials and process conditions. Preferably also, the film or cell is subsequently treated to enhance its barrier layer interface function.

Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a smooth conductive substrate, preferably comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate, the cell further including a rectifying barrier layer. Preferably, the film is electrodeposited on the substrate surface with specific materials and process conditions. Preferably also, the film or cell is subsequently treated to enhance its barrier layer interface function.

Abstract: A high efficiency selenium photovoltaic solar cell comprises a transparent base; a pellucid layer of conductive oxide; a layer of polycrystalline selenium forming a heterojunction to the underlying oxide; a thin layer of tellurium interposed between the oxide and selenium layers providing a metallurgical bond therebetween; a layer of high work function metal forming an ohmic contact to the selenium layer. A process of optimizing the optical and electrical characteristic of each component of the solar cell results in increased sunlight engineering efficiencies in excess of about 3.5%.

Abstract: A low cost chemical spray deposition of metal and mixed metal chalcogenides is accomplished by spray depositing an oxide film from a mixture of a salt of the metal in solution with a water soluble hydrocarbon and water solvent. This oxide film is subjected to a heat treatment in the presence of a chalcogenide gas to induce an ion exchange process transforming the metal oxide or mixed metal oxide into the chalcogenide films of the present invention.The deposition process is used to provide efficient selective absorbing surfaces for a solar thermal energy converter. The process may further be employed to produce a thin film photovoltaic device for converting light energy into electricity.

Abstract: An electrophotographic photosensitive member having an amorphous deposition layer as a photoconductive layer, in which the amorphous deposition layer is formed by gradual increase in a substrate temperature during deposition of the photoconductive material.

Abstract: A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

Abstract: A process of producing a material sensitive to an electromagnetic and corpuscular radiation involves successively depositing, onto a transparent substrate, a layer of a semiconductor, a barrier layer inert to the semiconductor layer and a layer of a metal capable of reacting with the semiconductor layer under the effect of the electromagnetic and corpuscular radiation with the formation of the reaction products. After deposition of the metal layer, there is performed annealing at a temperature equal to or exceeding the temperature of diffusion of the material of the barrier layer into the material of the layers adjacent thereto. The annealing is conducted for a period sufficient for a partial or a complete dissolution of the barrier layer.

Abstract: An improved type of thin film photovoltaic cell can be produced by forming a thin layer of n-type CdTe up to 2 micron thick on a conductive support, heat-treating the CdTe layer at 80.degree. to 210.degree. C. for 20 to 180 minutes, and providing on the free surface of the heat-treated CdTe layer a transparent electrode.

Abstract: A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, introducing at least two or three compensating or altering agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce p or n amorphous semiconductor films so that the films function like similar crystalline materials.

Abstract: A member for electrostatographic reproduction formed of a substrate and having a photoconductive layer characterized by a sensitivity to light which is greater at the outer portions than at the center to compensate for fall-off at the extremes of radiation patterns.

Abstract: A photovoltaic cell and a process of making and using it are disclosed wherein extremely thin semiconductor layers are provided through the use of polycrystalline CdS and CdTe. The cell has conversion efficiencies as high as 6% or more when exposed to AM2 light.

Abstract: Selenium pellets are produced by compacting, under a pressure, a powdery material selected from a group consisting of powdery metallic selenium, and a mixture of powdery metallic selenium and one or more of additives, and by sintering the resulting compact at a temperature not less than 100.degree. C. but lower than the melting point of selenium.The selenium pellets are used as selenium source material in vacuum-deposition to produce a photoconductive layer having improved photoelectric properties over those obtained by using conventional particulate amorphous selenium as source material.

Abstract: Application of heat preferentially to one surface of a film of a semiconducting sulphide, sulphoselenide, selenide or telluride to establish a temperature differential between the surfaces of the film improves the electrical and photochemical properties of the film. The film may be employed in solar cells. Preferably the film is prepared by electrophoresis of a colloidal suspension of the semiconductor in an aqueous medium.

Abstract: An electrophotographic photosensitive member having an insulating layer overlaid on the one side of an amorphous photoconductive layer is characterized in that said photosensitive member further comprises two layers: a charge injection layer and a subsidiary charge injection layer overlaid on the other side of the photoconductive layer with the subsidiary charge injection layer being interposed between the photoconductive layer and the charge injection layer, said subsidiary charge injection layer having a lower free charge density than that in the photoconductive layer and being able to make it easy to inject an amount of electric charge from the charge injection layer into the photoconductive layer whereas said charge injection layer has a higher free charge density than that in the photoconductive layer and serves as a main supply source of the electric charge to be injected into the photoconductive layer.

Abstract: There is described an electrophotographic photoreceptor comprising a conductive metallic substrate, a composite interfacial structure made up of a layer comprising organic thermoplastic polymeric adhesive material and a thin layer of arsenic triselenide, and a photoconductive insulating layer comprising selenium or its alloys. The photoreceptor is formed by a method which includes depositing the arsenic triselenide layer while the substrate temperature is held at or above the softening point of the thermoplastic polymeric adhesive material but below the crystallization temperature of the arsenic triselenide and then depositing a layer of selenium or selenium alloy while the substrate temperature is held below the softening point of adhesive material and below the crystallization temperature of the selenium or selenium alloy.

Abstract: A method for manufacturing an image pickup tube target is disclosed, in which, in evaporating a porous Sb.sub.2 S.sub.3 film in a low pressure insert gas, the amount of pre-evaporation of Sb.sub.2 S.sub.3 is decreased as the number of times of repetitive use of an evaporation boat increases in which Sb.sub.2 S.sub.3 is placed for evaporation, whereby an Sb.sub.2 S.sub.3 film having a given porosity is formed.

Abstract: A flexible photoreceptor having improved thermal stability and durability and a process for obtaining the photoreceptor by evaporating and condensing selenium-containing photoconductive materials in a profile of increasing arsenic concentration onto a flexible substrate from a plurality of selenium alloy baths of varying concentrations, individually or collectively heated while simultaneously heating and maintaining the temperature of the substrate or interface-substrate layers during evaporation and condensation at no less than the glass transition temperature of the selenium alloy of lowest arsenic concentration to be evaporated from the donor source and not less than about 85.degree. C.

Abstract: A photoconductive element consisting essentially of an electrically conductive substrate, a barrier layer of aluminum hydroxyoxide crystallites on said substrate and a continuous photoconductive layer over said barrier layer.

Abstract: The invention relates to a photovoltaic cell for converting solar energy into electrical power and which has, in sandwich construction, two different polycrystalline, semiconductor layers in intimate contact and disposed on a metal or metal-coated substrate, the cell being provided with a light-transmissive or grating-shaped electrode on the side toward the light. The cell layers comprise the semiconducting selenides of cadmium and tin.

Abstract: A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi.sub.2 Te.sub.3 and Sb.sub.2 Te.sub.3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300.degree. C, and others at a temperature of not less than 350.degree. C.

Abstract: There is described a method for forming a photoreceptor wherein a substrate having a thin electrically insulating oxide film on a surface thereof is subjected to an electroless deposition step from a selenious acid solution whereby the oxide film is dissolved and a thin selenium layer is formed on the substrate. In one embodiment, a relatively thick photoconductive insulating layer comprising selenium or alloys thereof is deposited by vacuum evaporation over the previously electrolessly deposited selenium layer. In another embodiment, a layer of a charge carrier transport material is deposited over the selenium layer. In a preferred embodiment of the invention, an oxide-free substrate is initially subjected to an electrochemical oxidation step in an alkaline medium to form a thin electrically insulating oxide film on the surface thereof.

Abstract: 1. A photoconductive target for a pickup tube comprising a layer of porous lead telluride on a transparent conductive layer, said porous lead telluride having a resistivity of approximately 10.sup.-11 ohm cm when maintained at a temperature substantially equal to liquid nitrogen temperature.

Abstract: A new, useful and nonobvious process is disclosed wherein vapor phase controlled stoichiometry is employed to obtain compound semiconductor films having large crystallite textures. The process has been found to be particularly useful in the formation of compound semiconductor films where one of the components is a high vapor pressure element and the substrate material is amorphous.

Abstract: An electrophotographic image carrier is made by depositing an intermediate layer on an electrically conductive substrate and then vapor-depositing, on the intermediate layer, an inorganic photoconductive layer while maintaining the temperature of the substrate during the deposition of the photoconductive layer at a value which is above the melting point of the intermediate layer, but below the damaging temperature of the photoconductive layer.

Abstract: A method of making low cost photovoltaic cells on a large scale basis by means of a continuous process of coating sheet glass while the sheet glass moves in and has its under surface immersed in a tank of molten material, comprising forming the film of CdS microcrystals on the glass sheet, which has previously been coated with transparent SnO.sub.x to a thickness of about 0.3 to 0.6 microns. A water solution of a cadmium salt, a sulphur compound, and an aluminum containing soluble compound is intermittenty sprayed on said glass while its exposed surface is maintained at a constant temperature in the range 500.degree. F to 1100.degree. F and while irradiating the surface with intense ultraviolet light so as to form a film of CdS microcrystals. This CdS film has Al impregnated within the stratum of the film adjacent to the SnO.sub.x, but only optionally has Al impregnated in the stratum of the CdS film adjacent to the exposed surface of the CdS film.

Abstract: A one-step process, method and corresponding xerographic photoreceptor obtained thereby, having all or part of the hole generating layer in the trigonal form, the process being effected and the photoreceptor obtained through the use of a glow discharge and ionizable inert gas.

Abstract: A cadmium telluride photovoltaic cell is produced with increased conversion efficiency arising from enhanced open-circuit voltage. Such voltage is achieved by altering the surface of the crystalline cadmium telluride that contacts the barrier metal by heating the cadmium telluride in the presence of oxygen prior to depositing the barrier metal.