Abstract: A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor.

Abstract: A chalcopyrite-type compound, for instance, CuInS.sub.2 or CuGaS.sub.2, is prepared by subjecting a Group I-III oxide composition, containing at least one of the Group Ib element, for instance copper (Cu), and at least one of the Group IIIb element, for instance indium (In) or gallium (Ga) to a heat treatment under a reducing atmosphere containing the Group VIb element, for instance sulfur (S) or selenium (Se), or under an atmosphere containing a reducing compound of the Group VIb element, thereby converting said oxide composition into a chalcopyrite-type compound.

Abstract: A method for manufacturing solar cells, more specifically thin-film solar cells, particularly thin-film solar cells on which CuInSe.sub.2 is deposited. A substrate is provided on which a multi-layer structure is formed by depositing thereon a layer defined by a compound including several basic substances, such as copper-indium-diselenide (CuInSe.sub.2), or a closely-related compound where copper (Cu) and indium (In) can be replaced totally or partially with Silver (Ag) and gallium (Ga), respectively, and where selenium (Se) can be replaced totally or partially with sulphur (S) and tellurium (Te), and where the concentration of the basic substances in the layer varies. The substrate is placed on the inside of a rotatable, tubular carrier device, after which the substrate is heated, and substance sources are provided for depositing the basic substances on the substrate.

Abstract: A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.

Abstract: A printed wiring board is selectively covered with solid solder resist pattern implemented by a first solder resist sub-pattern formed from liquid photo-sensitive solder resist and a second solder resist sub-pattern formed from photo-sensitive fry films, and a first area with pads and a second area with a through-hole or via-hole are respectively covered with the first solder resist sub-pattern and the second solder resist sub-pattern so that any peeling of the first solder resist sub-pattern and any residue of the liquid photo-sensitive solder resist in the through-hole or via-hole never take place.

Abstract: A method for vacuum depositing a selenium-arsenic coating on a substrate to form a photoreceptor by evaporating selenium with an arsenic concentration of 0.1 to 0.6 percent by weight and discontinuing the evaporation when the weight of the selenium alloy remaining is 2-10 percent of the original weight.

Abstract: A method of making pn CdTe/CdS thin film solar cells, in which a transparent TCO layer is deposited as a front contact on a transparent substrate in the form of inexpensive soda-lime glass, and is preferably provided with an ultra-thin indium layer, which is in turn coated with the CdS layer, wherein the thus coated substrate is brought to the CdTe coating at a temperature between 480.degree. C. and 520.degree. C., which is maintained during the ensuing rapid CdTe deposition using the close-spaced sublimation method with a preferred rate of deposition of 5 to 15 .mu.m/min in an inert atmosphere. The indium layer dissolves during this deposition and effects the necessary n-doping of the CdS layer, without an additional method step. Solar cells can be made in this way with high efficiency in an inexpensive method, suitable for mass production.

Abstract: A photovoltaic energy conversion device and methods for forming the same with relatively high efficiency, high stability, low cost, low weight, and low toxicity. The device comprises a thin film n/p or n/i/p type, gradient-doped heterojunction which uses compatible, lattice-matched, non-hazardous semiconducting compounds from the I-III-VI.sub.2 (14), I-III-VI-VII (15) and I-VI.sub.3 -VII (16) series, an ohmic contact (13) to the n-layer comprising a group III metal, a transparent ohmic contact (17) to the p-layer, a grid (18), and an antireflection coating (20).

Abstract: An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick Cds layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form larger diameter CdTe crystals and substantially reduce the effective thickness of the CThis invention was made with Government support under Subcontract No. ZL-7-06031-3 awarded by the Department of Energy. The Government has certain rights in this invention.

Abstract: A method for sensitizing lead salt infrared detectors includes the step of making a photomask for depositing a lead salt material on a substrate for forming a plurality of detectors in which each detector is electrically coupled in series to at least one other detector on the substrate. A lead salt material, such as lead sulfide or lead selenide, is deposited onto the substrate through the photomask to form a plurality of lead salt detectors connected in series on a substrate. A monitor is connected across a series of interconnecting detectors on the substrate and the substrate is immersed in a heated chemically inert liquid, such as a fluorocarbon liquid, for a predetermined time period to sensitize the lead salt detectors on the substrate while simultaneously monitoring the detectors across the substrate in the heated liquid. The monitor produces an average reading of the resistance for each detector on the substrate to determine when to remove the detectors from the heated liquid.

Abstract: A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor.

Abstract: Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be formed as films on solid-state substrates by reacting silane gas and at least one alloying gas (H.sub.2 M, wherein M is an element from Group VIa of the periodic table), preferably with hydrogen dilution, by a glow-discharge method such as plasma-enhanced chemical vapor deposition. The alloys can have an optical bandgap energy from about 1.0 eV to about 2.3 eV, as determined by selecting one or more different Group VIa elements for alloying or by changing the concentration(s) of the alloying element(s) in the alloy. The alloys exhibit excellent light-to-dark conductivity ratios, excellent structural quality, and resistance to Staebler-Wronski degradation. They can be used as "i" type or doped for use as "p" or "n" type materials.

Abstract: Disclosed is a process which comprises providing an alloy of selenium, preparing powdered particles of the alloy with an average particle diameter of less than 300 microns, placing the powdered particles into a container and tumbling the container, and subsequently removing the powdered particles from the container and compressing the powdered particles into pellets.

Abstract: A process which includes providing a preform including a polymeric material formed to permit the introduction of a fluid under pressure into the preform, heating the preform to a temperature at or above the glass transition temperature of the polymeric material and below the melting temperature of the polymeric material, placing the heated preform into a substantially cylinderical mold with a polished seamless inside surface, introducing a fluid under pressure into the heated preform while maintaining the preform axially centered in the mold, thereby causing the preform to expand without contacting the mold surface, subsequently causing the preform to expand until it contacts the mold surface, heating the expanded preform to an appropriate heat setting temperature above the stretching temperature and below the melting temperature of the polymeric material while maintaining fluid pressure, and subsequently cooling the set preform, resulting in formation of a biaxially oriented seamless belt.

Abstract: A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices. A composite film of copper, indium, and possibly other group IIIA elements, is deposited upon a substrate. A separate film of selenium is deposited on the composite film. The substrate is then heated in a chamber in the presence of a gas containing hydrogen to form the compound semiconductor material.

Abstract: A process for the preparation of a chalcogenide alloy which comprises the evaporation of a mixture of a chalcogenide alloy and a metal oxide. Also, there is disclosed a process for controlling the fractionation of chalcogenide alloys which comprises providing a mixture of chalcogenide alloy, and a metal oxide; and subsequently subjecting the resulting mixture to evaporation; and a process for controlling the fractionation of selenium alloys which comprises providing a selenium alloy; admixing therewith a metal oxide; and subsequently subjecting the resulting mixture to evaporation.

Abstract: This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Abstract: A polycrystalline CuInSe.sub.2 film is produced by adding a liquid cooling medium to a mixture of Cu, In and Se powders, grinding the resulting composition by means of a ball-mill to provide a slurry containing CuInSe.sub.2 of low crystallinity, drying and adding a binding agent to the slurry to form a paste, coating a substrate with the paste, and sintering the paste so applied under a nitrogen atmosphere.The starting materials that can be used are not limited to respective powders of the above-mentioned elements but may be Cu-Se and In-Se compounds and the method provides CuInSe.sub.2 of excellent quality on a mass production scale at low cost.

Abstract: A mercury compound such as mercury telluride or mercury cadmium telluride is deposited upon a substrate by chemical vapor deposition, with dissociation of the organic compounds accelerated by laser energy. The mercury-containing compound is preferably divinylmercury, which dissociates under intense light of 248 nanometers wavelength to deposit mercury in combination with the codeposited element. The laser-assisted chemical vapor deposition is accomplished at 100.degree. C. to 195.degree. C., preferably 165.degree. C., without the deposition of carbon contaminants.

Abstract: A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.

Abstract: A process for the preparation of chalcogenide alloy compositions which comprises providing a chalcogenide alloy; admixing therewith crystalline or amorphous selenium; and subsequently subjecting the resulting mixture to evaporation.

Abstract: A method of making a multi-layer photovoltaic cell containing a heat-treated layer including Cd and Te, comprising the sequential steps of applying a chloride to the layer, heat-treating the layer with the chloride thereon, and subsequently depositing another semiconductor layer thereon.

Abstract: A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours.

Abstract: A process for fabricating an electrophotographic imaging member is disclosed comprising providing in a vacuum chamber at least one crucible containing particles of an alloy comprising selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, providing a substrate in the vacuum chamber, applying a partial vacuum to the vacuum chamber, and rapidly heating the crucible to a temperature between about 250.degree. C. and 450.degree. C. to deposit a thin continuous selenium alloy layer on the substrate.

Abstract: A process for preparing a photoelectric conversion film containing one or more compound semiconductor made from Cd and group Vi element comprises coating a paste containing (a) a photoelectric conversion material, (b) a dopant, (c) a flux, (d) an organic binder, and optionally (e) a glass frit on a substrate, and sintering it at 300.degree. C.-800.degree. C. in an inert gas blanket.

Abstract: An alloy treatment process is disclosed which comprises providing particles of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, forming crystalline nuclei on at least the surface of the particles while maintaining the substantial surface integrity of the particles, heating the particles to an initial temperature between about 50.degree. C. and about 80.degree. C. for at least about 30 minutes to form a thin, substantially continuous layer of crystalline material on the surface of the particles while maintaining the core of selenium alloy in the particles in an amorphous state, and rapidly heating the particles to at least a second temperature below the softening temperature of the particles that is at least 20.degree. C. higher than the initial temperature and between about 85.degree. C.

Abstract: Disclosed is a projected beam switchable data storage device having a state changeable memory material. The memory material is a multi-phase system having substantially continuous, dielectric, ceramic phase and discrete cells of a state switchable phase.

Abstract: A process for producing a photoelectric conversion film comprising heat-treating a coating (A) of a photoconductive material composed chiefly of at least one of CdSe, CdS, CdTe, CdS.sub.x Se.sub.1-x and CdS.sub.x Te.sub.1-x wherein x is a real number of less than 1, opposite from a coating (B) in proximity thereto, the coating (B) being made of a material composed chiefly of CdS and a Cd halide.

Abstract: Thermal sources of Te and of Hg are provided in a vacuum chamber to furnish constant effusion of Te and Hg. Laser radiation is used to evaporate a beam of CdTe from a target of CdTe in the chamber. The laser radiation is modulated to vary the beam intensity of CdTe and thereby deposit a controlled compositional profile of Hg.sub.(1-x) Cd.sub.x Te on a substrate located in the chamber.

Abstract: A transparent conductive film is formed on a glass substrate covering substantially its entire surface area and this transparent conductive film is divided into a plurality of transparent conductive parts per each photoelectric converting region. The photoelectric converting region is of a nearly rectangular shape, and accordingly, in order to divide the transparent conductive film into respective transparent conductive film parts, a laser beam is irradiated along all longitudinal and lateral sides of the rectangle. Thereby, the transparent conductive film parts corresponding to the photoelectric converting regions are formed as island regions. Semiconductor film parts are formed on the transparent conductive film parts divided into island regions corresponding to respective photoelectric converting regions and subsequently aluminum film parts are formed on these semiconductor film parts.

Abstract: Thin film photovoltaic solar cells are made by forming the cell structure from a number of layers including the contact layers and semiconductor layers. At least one of the semiconductor layers is a tellurium containing II-VI compound. After the structure is formed, it is heated to temperatures above 300.degree. C. and then rapidly cooled at rates greater than 10.degree. C./s. Cells comprising CdS and CdTe have increased fill factor when the fabrication process includes heating and rapid cooling.

Abstract: A method of making a photo-electric converting element which includes the steps of forming a photoconductive layer on an insulative substrate by applying a single substance of Group II-VI compound semiconductors which include Cd, or two or more Group II-VI compound powders; and then baking to form a photoconductive layer having a thickness of 1 to 10 .mu.m and a surface roughness of 0.2 to 1 .mu.m and also having its peripheral edge tapered outwardly with respect to the substrate at an angle not greater than 60.degree. and forming a counterelectrode by the use of a lift-off technique so as to overlay a portion of the photoconductive layer.

Abstract: A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Abstract: Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

Abstract: Tandem solar cells combine the energy-absorbing efficiencies of 1.7 eV CdSe/ZnTe heterojunctions with 1.0 eV I-III-VI.sub.2 /II-VI heterojunctions in mechanically-stacked or monolithic cells. Lightweight, efficient tandem cells that are particularly suited to space applications due to their radiation hardness are constructed by judicious selection of the substrate, superstrate and semiconductor materials.

Abstract: A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e.g., of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal.

Abstract: A large area, thin-film photovoltaic device 30 having a transparent front contact 32 is made more efficient by the use of a current collector grid 36. The current collector grid 36 is embedded in an optically transparent electrically conductive layer 34 and may extend partially into a substrate 32 or partially into a first semiconductor layer 38. The process for preparing such thin-film photovoltaic devices includes forming channels in the optically transparent electrically conductive layer 34 and depositing the current collector grid material in the channels. By this design, problems encountered in the deposition of thin-film semiconductor layers due to the presence of relatively large current collector grids are effectively eliminated.

Abstract: A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Abstract: A solid-state semiconductor photonic device is prepared by a photoelectrochemical deposition method. The device contains a highly conductive coating material including one or more metals and/or semiconductors on a substrate containing a semiconductor material. The device is utilized in photodetectors, including radiometric detection cells, in conversions of electrical energy to optical radiation, such as light-emitting-diodes and diodes lasers, and in photovoltaic cells, including Schottky-barrier cells.

Abstract: A process for forming an overcoated electrophotographic imaging member comprising applying on an electrophotographic imaging member a coating in liquid form comprising a cross-linkable siloxanol-colloidal silica hybrid material having at least one silicon bonded hydroxyl group per every three --SiO-- units and a catalyst for the cross-linkable siloxanol-colloidal silica hybrid material, the coating in liquid form having an acid number less than about 1 and curing the cross-linkable siloxanol-colloidal silica hybrid material until the siloxanol-colloidal silica hybrid material forms a hard cross-linked solid organosiloxane-silica hybrid polymer layer.

Abstract: A stable front contact current collector grid 116 is provided for photovoltaic devices. The current collector grid 116 is disposed between two semiconductor layers, 118 and 119, each semiconductor layer having the same conductivity type. The photovoltaic device utilizes a substrate 112; an optically transparent electrically conductive layer 114; a first layer of semiconductor material 118; a front contact current collector grid 116; a second layer of semiconductor material 119 having the same conductivity type as the first semiconductor layer; a third layer of semiconductor material 120 having a conductivity type opposite from that of the first and second semiconductor layers; and an electrically conductive film 122 in contact with the third semiconductor layer.

Abstract: A large area photovoltaic device having a transparent front contact is made more efficient by a current collector grid formed over the transparent front contact to decrease the series resistance of the device. Where the front contact is between a transparent substrate and the semiconductor layers of the photovoltaic device, the collector grid is embedded in the semiconductor layers. To prevent leakage of current into the collector grid from one semiconductor layer, the collector grid material is selected to form a Schottky barrier junction with that semiconductor layer that blocks the flow of the leakage current. The process for preparing such thin film photovoltaic devices includes etching channels in the semiconductor layers, depositing the collector grid material in the channels, insulating the grid, and depositing a back electrical contact film.

Abstract: A process for forming an overcoated electrophotographic imaging member comprising applying on an electrophotographic imaging member a coating in liquid form comprising a cross-linkable siloxanol-colloidal silica hybrid material having at least one silicon bonded hydroxyl group per every three --SiO-- units on the electrophotographic imaging member and a hydrolyzed ammonium salt of an alkoxy silane having the formula ##STR1## wherein R.sub.1, R.sub.2, and R.sub.3 are independently selected from the group consisting of aliphatic and substituted aliphatic radicals having 1 to 4 carbon atoms, R.sub.4 is selected from the group consisting of aliphatic radicals, substituted aliphatic radicals and the group ##STR2## wherein y is a number from 2 to 4, and R.sub.

Abstract: An evaporation source designed so that two or more materials to be evaporated are heated to evaporate by respective heaters, as well as method of using such an evaporation source are disclosed. The evaporation source further includes means for detecting the temperature of the slowly evaporating material and means for controlling the heaters on the basis of the detected temperature. The method of using this evaporation source comprises controlling the temperature of the slowly evaporating material in order to control the temperature of the evaporation source in such a manner that the respective materials are simultaneously heated to evaporate and deposit a film on a substrate.

Abstract: A process for the preparation of an electrostatographic photosensitive device comprising combining a sodium additive comprising sodium carbonate, sodium bicarbonate, sodium selenite, sodium hydroxide or mixtures thereof with trigonal selenium particles, an organic resin binder and a solvent for the binder to form a milling mixture, milling the milling mixture to form a uniform dispersion, applying the dispersion to a substrate in an even layer and drying the layer.

Abstract: A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Abstract: A method of forming an alloy layer on the surface of a substrate comprising forming in a vessel a molten bath comprising at least one vaporizable alloying component having a higher vapor pressure than at least one other vaporizable alloying component in said bath, forming a thin, substantially inert, liquid layer of an evaporation retarding film on the upper surface of said molten bath, said liquid layer of an evaporation retarding film having a lower or comparable vapor pressure than both said vaporizable alloying component having a higher vapor pressure and said other vaporizable alloying component on said substrate, co-vaporizing at least a portion of both said vaporizable alloying component having a higher vapor pressure and said other vaporizable alloying component whereby said evaporation retarding film retards the initial evaporation of said vaporizable alloying component having a higher vapor pressure, and forming an alloy layer comprising both said vaporizable alloying component having a higher vapor

Abstract: A vapor deposition apparatus including a vacuum chamber, a vacuum pump for evacuating the chamber, and a mounting assembly disposed within the chamber and adapted to support and electrically isolate a plurality of substrate electrode units to be coated. Electrical couplings connect the electrode units to a power supply that establishes therebetween potential gradients that produce a glow discharge and resultant heating thereof. Also disposed within the vacuum chamber is a source of evaporative coating for deposition on the glow discharge heated electrode units.

Abstract: A process for depositing particles within a softenable layer to form a migration imaging member wherein the layer is softened by heating, exposed in a first deposition zone to a high impingement rate of vapors of selenium or selenium alloy moving along in a line of sight path from a selenium or selenium alloy source to form a sub-surface monolayer of spherical particles comprising the selenium or selenium alloy, removed from the first deposition zone prior to a substantial dropoff in transmission optical density, exposed to a lower impingement rate of vapors of selenium or selenium alloy in a second deposition zone to increase the size of the spherical particles while maintaining a narrow particle size distribution and achieving a high surface packing density thereby increasing the transmission optical density of the imaging member, and thereafter removed from the second deposition zone prior to a substantial dropoff in transmission optical density.

Abstract: An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.