Abstract: A extreme low resistivity light attenuation anti-reflection coating structure includes a substrate, a coating module, and a composed protection coating layer. The coating module is formed on a front surface of the substrate. The coating module is composed of a plurality of Ti-based oxide coating layers and a plurality of metal coating layers that are alternately stacked with each other. The composed protection coating layer is formed on the coating module.

Abstract: The invention describes a sliding element, in particular a sliding bearing, with a support element and a sliding layer, between which a bearing metal layer is arranged, wherein the sliding layer is made from bismuth or a bismuth alloy, and wherein the crystallites of the bismuth or the bismuth alloy in the sliding layer adopt a preferred direction with respect to their orientation, expressed by the Miller index of the lattice plane (012), wherein the X-ray diffraction intensity of the lattice plane (012) is the greatest compared to the X-ray diffraction intensities of other lattice planes. The X-ray diffraction intensity of the lattice plane with the second-largest X-ray diffraction intensity is a maximum of 10% of the X-ray diffraction intensity of the lattice plane (012).

Abstract: A sliding member has a coating layer deposited on a base material through an intermediate layer, wherein the intermediate layer is formed of a lead-free metal, and the coating layer is formed of Bi or a lead-free Bi alloy; and wherein a grain in the intermediate layer becomes gradually large toward a coating layer side from a base material side, and a grain in the coating layer forms a columnar grain of which the major axis directs toward the surface of the coating layer from the intermediate layer side. Thus formed configuration improves a bonding strength between the base material and the coating layer owing to the intermediate layer, and has the grain of the coating layer formed into a desirable shape for bearing a load from an opposite material to improve fatigue resistance.

Abstract: A bonding material that has a melting temperature of 270° C. or higher and that does not contain lead is inexpensively provided. An electronic element and an electrode of an electronic component are bonded using a bonding material containing an alloy that contains Bi as the main component and that contains 0.2 to 0.8 wt % Cu and to 0.2 wt % Ge.

Abstract: A method of manufacturing a decorative article, including a first coating formation step of forming a first coating of primarily TiN on a base member, and a second coating formation step of forming a second coating on the first coating by means of a dry plating method using an Au—Pd—Ag—In alloy of primarily Au and containing 6.0-9.0 wt % Pd, 6.0-8.0 wt % Ag, and 7.0-9.0 wt % In as a target.

Abstract: An electromagnetic shielding copper foil superior in electromagnetic shielding ability, high in transmittance, and free from particle shedding comprising a copper foil on at least one surface of which a fine roughening particle layer of copper or an alloy is provided and having on the fine roughening particle layer a smoothening layer comprised of cobalt, nickel, indium, or an alloy of the same and an electromagnetic shield able to be suitably used for a PDP using the same. The fine roughening particle layer may also be a layer comprised of a fine particle roughening particle layer of copper on which a fine roughening particle layer of a copper alloy is stacked or may also be formed by a copper-cobalt-nickel alloy. The smoothening layer of the copper foil may be treated for stainproof or by a silane coupling agent to protect the surface of the copper foil.

Abstract: A brazing clad material is a composite material that comprises a base material and a brazing material layer formed integrally on the base material. The brazing material layer has a Ni or Ni alloy layer, a Ti or Ti alloy layer and a Fe—Ni alloy layer that are sequentially stacked in this order on the base material. The brazing material layer has a Fe concentration of 25 to 40 wt % in the entire brazing material layer. The brazing material layer satisfies a ratio of W1/W2 to be 0.56 to 0.66, where W1 is a weight of Ni contained in the entire brazing material layer and W2 is a total weight of Ni and Ti contained in the entire brazing material layer.

Abstract: A method of producing titanium metal from a titanium-containing material includes the steps of producing a solution of M?TiF6 from the titanium-containing material, selectively precipitating M?2TiF6 from the solution by the addition of (M?)aXb and using the selectively precipitated M?2TiF6 to produce titanium. M? is a cation of the type which forms a hexafluorotitanate, M? is selected from ammonium and the alkali metal cations, X is an anion selected from halide, sulphate, nitrite, acetate and nitrate and a and b are 1 or 2.

Abstract: The invention is a method for the production of a composite multilayer material having a backing layer, a bearing metal layer of a copper alloy or an aluminum alloy, a nickel intermediate layer and an overlay consisting of about 0-20 wt. % copper and about 0-20 wt. % silver, the combined maximum wt. % of copper and silver being about 20 wt. %, the rest being bismuth, and the layer thickness of the nickel layer amounts to more than 4 ?m by electrodeposition, in which the overlay is deposited from methyl sulphonic acid-based electrolyte.

Abstract: The invention describes a multi-layered bearing with a supporting metal layer, optionally a bearing metal layer disposed on top of it, an anti-friction layer on top of the latter as well as a wearing layer on top of it. The wearing layer is made from bismuth or a bismuth alloy and the anti-friction layer is made from a copper-bismuth or silver-bismuth alloy or silver.

Abstract: Disclosed is a sliding member including an overlay layer made of a Bi based alloy comprising Cu as an essential element and at least one element selected from the group of Sn and In, wherein the Bi based alloy comprises 0.1 to 10 mass % of Cu and 0.5 to 10 mass % in total of the at least one element selected from the group of Sn and In.

Abstract: A joined body and method of producing the joined body are provided. A first member containing at least a ceramic and a second member containing at least one of a metal and a metal composite are joined with each other via a metal adhesive. The metal adhesive contains at least indium and at least one material containing at least a component capable of reducing the melting point of indium and is provided between the first and second members to provide a laminate. The laminate is heated at a temperature in a solid-liquid coexisting range of an alloy comprising indium and the indium melting point reducing component to join the first and second members.

Abstract: A Bi base material of which a Miller index (202) face has the index of orientation of not less than 30% and in which the (202) face has the index of orientation assuming a maximum value as compared with those of other faces forms a minute structure and has a surface which is not a mirror finished surface but a fine, irregular surface on which minute and uniform projections in the form of a triangular pyramid or a quadrangular pyramid congregate. Therefore, the surface easily retains oil thereon to be improved thereby in oil wettability, as a result of which an improvement in anti-seizure is achieved.

Abstract: A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3.

Abstract: An optical recording material for binary, multibit or volume data storage is described. The optical recording material comprises: (a) at least one dyestuff selected from polymeric azo dyestuffs and oligomeric azo dyestuffs, the dyestuff changing its spatial arrangement upon irradiation with polarized electromagnetic radiation; and (b) optionally at least one grouping having form anisotropy.

Abstract: A multi-layer thermal interface structure for placement between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W. The structure comprises a plurality of superimposed metallic layers including a core layer of a solid metal or metal alloy of high thermal conductivity preferably composed of aluminum or copper, a second layer having phase change properties and a third layer of nickel separating the solid metal layer from the layer having phase change properties.

Abstract: A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Abstract: A joined structure of a metal terminal and a ceramic member has a joining layer between the terminal and the ceramic member. The joining layer has a metal adhesive layer containing at least indium metal. The invention further provides a joined structure of a metal member and a ceramic member. The metal member has a tip face and a side face. A hollow is formed in the ceramic member. A joining layer is formed between a bottom surface facing the hollow and the tip face of the member, and further formed between a side wall surface facing the hollow and the side face of the member. The joining layer has a metal adhesive layer containing at least indium metal.

Abstract: A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implanted-ion rich region in the Si-containing substrate. The implanted-ion rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

Abstract: Articles for use in a high-temperature, oxidative environment, methods for manufacturing such articles, and a material system for protecting articles in such an environment are provided where, for example, one article comprises a substrate and a protective layer disposed over the substrate, the protective layer comprising at least about 60 atomic percent of a metal selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), iridium (Ir), and mixtures thereof.

Abstract: The invention is a formable, bright metallized laminate that has superior optical and deformation properties. The metallized laminate is made from a plurality of discontinuous metal island layers deposited on a formable clear coat film. The invention is also a method that includes depositing a first discontinuous layer of metal islands upon a formable clear coat film and then depositing a second discontinuous layer of metal islands onto the first discontinuous layer of metal islands.

Abstract: A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implant rich region in the Si-containing substrate. The implant rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

Abstract: To provide a plating method, which enables wide industrial use of the redox system electroless plating method having excellent characteristics, and a plating bath precursor which is preferable for the plating method. The plating method comprises a process oxidizing first metal ions of a redox system of a plating bath from a lower oxidation state to a high oxidation state, and second metal ions of said redox system are reduced and deposited onto the surface of an object to be plated, wherein a process is provided in which by supplying the electrical current to the plating bath, the first metal ions are reduced from said lower oxidation state to thereby activate the plating bath. The plating bath precursor is formed stabilizing the plating bath so that reduction and deposition of the second metal ions substantially do not occur in order to improve its storing performance.

Abstract: Selected micro- and nanoscale, 1-dimensional and 2-dimensional periodic and random structures generated on silicon and other substrates are expected to perform as compliant, thin films for gettering defects and for accommodating lattice and thermal expansion mismatches during heteroepitaxial growth thereon, thereby leading to relatively defect-free, heteroepitaxial films of chosen thicknesses. The as-grown epilayers or completed electronic and optoelectronic devices can be bonded to a second substrate such as glass, or plastic following separation thereof from the substrate on which they were formed using preferential etching of a readily detachable, nanoporous silicon or silicon dioxide layer introduced between the generated structures and the substrate.

Abstract: Disclosed is a sliding member including an overlay layer made of a Bi based alloy comprising Cu as an essential element and at least one element selected from the group of Sn and In, wherein the Bi based alloy comprises 0.1 to 10 mass % of Cu and 0.5 to 10 mass % in total of the at least one element selected from the group of Sn and In.

Abstract: A joined structure of a metal terminal and a ceramic member has a joining layer between the terminal and the ceramic member. The joining layer has a metal adhesive layer containing at least indium metal. The invention further provides a joined structure of a metal member and a ceramic member. The metal member has a tip face and a side face. A hollow is formed in the ceramic member. A joining layer is formed between a bottom surface facing the hollow and the tip face of the member, and further formed between a side wall surface facing the hollow and the side face of the member. The joining layer has a metal adhesive layer containing at least indium metal.

Abstract: A Bi base material of which a Miller index (202) face has the index of orientation of not less than 30% and in which the (202) face has the index of orientation assuming a maximum value as compared with those of other faces forms a minute structure and has a surface which is not a mirror finished surface but a fine, irregular surface on which minute and uniform projections in the form of a triangular pyramid or a quadrangular pyramid congregate. Therefore, the surface easily retains oil thereon to be improved thereby in oil wettability, as a result of which an improvement in anti-seizure is achieved.

Abstract: A process of synthesizing metal and metal nitride nanowires, the steps comprising of: forming a catalytic metal (such as gallium, and indium) on a substrate (such as fused silica quartz, pyrolytic boron nitride, alumina, and sapphire), heating the combination in a pressure chamber, adding gaseous reactant and/or solid metal source, applying sufficient microwave energy (or current in hot filament reactor) to activate the metal of interest (such as gold, copper, tungsten, and bismuth) and continuing the process until nanowires of the desired length are formed. The substrate may be fused silica quartz, the catalytic metal a gallium or indium metal, the gaseous reactant is nitrogen and/or hydrogen and the nanowires are tungsten nitride and/or tungsten.

Abstract: A multilayer ceramic composite is described which contains at least one supporting zone having oxidation-sensitive reinforcing fibers as well as a matrix. The matrix optionally contains oxidation-sensitive components. The composite further contains at least one surface layer, as well as at least one additional protective layer disposed between the supporting zone and surface layer, and whose matrix is composed substantially of at least one component of the matrix of the supporting zone or cover layer. The protective layer further contains additives that form self-healing layers.

Abstract: A joined structure includes a metal terminal, a ceramic member and a joining layer between the metal terminal and the ceramic member. The joining layer includes a metal adhesive layer containing at least indium metal. The invention further provides a joined structure including a metal member, a ceramic member, and a joining layer. The metal member includes a tip face and a side face. A hollow portion is formed in the ceramic member. The joining layer is formed between a bottom surface facing the hollow portion and the tip face of member, and further formed between a side wall surface facing the hollow portion and the side face of the metal member. The joining layer also includes a metal adhesive layer containing at least indium metal.

Abstract: Provided is a Pb-free solder composition having an excellent heat resistance which does not damage a glass substrate and parts on the substrate when the soldering is carried out on to an electrode pattern formed on the substrate. The Pb-free solder composition contains, for example, not less than about 90% by weight of Bi, from about 0.1% to 9.9% by weight of Ag and from about 0.1% to 3.0% by weight of Sb, based on the whole solder composition.

Abstract: With regard to a function device formed by filling a porous structure with a functional material and a method for manufacturing the functional device, a technique for realizing a structure on a nanometer scale is not fully established. However, a method for manufacturing a function device characterized by including a step of providing a structure including columnar members and an area surrounding the columnar members, a step of removing the columnar members from the structure to form a porous body and a step of filling the porous body with a functional material allows various types of function device to be provided.

Abstract: A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107 cm−2 and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the epitaxial layer is fabricated. In another embodiment, there is provided a method of processing a semiconductor structure including providing a first substrate; providing a layered structure including a second substrate having an epitaxial layer provided thereon, the epitaxial layer having an in-plane lattice constant that is different from that of the first substrate and a threading dislocation density of less than 107 cm−2; bonding the first substrate to the layered structure; and removing the second substrate.

Abstract: A first member 10 containing at least ceramics and a second member 12 containing at least a metal or a metal composite was joined with each other. An adhesive 2 composed of a metal containing at least indium and materials 1A, 1B containing at least a component capable of reducing the melting point of indium between the first and second members to provide a laminate 13. The laminate 13 is heated at a temperature in solid-liquid coexisting range of an alloy comprising indium and said component to join the first member 10 and second member 12.

Abstract: Arrangement (1) for decreasing galvanic corrosion between metal components that includes at least a first component (2) in which a first metal is a part, and at least a second component (3) in which a second metal is a part, whereby the first metal has a higher normal-electrode potential (e0) than the second metal. The first component (2) is intended, after mounting, to be in electrical contact with the second component (3). The first component (2) is coated with a substantially continuous surface layer (4) that is adjusted to give the second component (3) an insignificant galvanic corrosion velocity after mounting. The invention is preferably applied in association with attachment elements such as bolt or screw joint reinforcements, which include a more noble metal than the component or the components with which the attachment element should be in contact with after mounting, and is particularly, preferred for vehicle components.

Abstract: A voltage variable composite structure comprising: a first layer of metal; a second layer of low-loss dielectric material impregnated with an array of first metal vias; a third layer of a voltage variable dielectric material; a fourth layer of a patterned thin metallic film; a fifth layer of low-loss dielectric material impregnated with an array of second metal vias; and a sixth layer of metal.

Abstract: A method and structure for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across a wafer surface. A substrate that includes a semiconductor material and a first dopant, has an amorphous layer formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. Heating of the wafer at 450 to 625 degree C. recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.

Abstract: The present invention provides a raw material 1 used for production of GaAs crystals by utilizing solidification of melt, wherein As 12 is accommodated in the inside of Ga 10, 11. Because As 12 is covered with Ga 10, 11, As 12 is not brought into contact with the air and can thus be conveyed without oxidizing As 12. The raw material 1 can be heated and melted as such to produce GaAs crystals by the Czochralski method.

Abstract: A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107cm−2 and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the epitaxial layer is fabricated. In another embodiment, there is provided a method of processing a semiconductor structure including providing a first substrate; providing a layered structure including a second substrate having an epitaxial layer provided thereon, the epitaxial layer having an in-plane lattice constant that is different from that of the first substrate and a threading dislocation density of less than 107 cm−2; bonding the first substrate to the layered structure; and removing the second substrate.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

Abstract: A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107 cm−2 and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the epitaxial layer is fabricated. In another embodiment, there is provided a method of processing a semiconductor structure including providing a first substrate; providing a layered structure including a second substrate having an epitaxial layer provided thereon, the epitaxial layer having an in-plane lattice constant that is different from that of the first substrate and a threading dislocation density of less than 107 cm−2; bonding the first substrate to the layered structure; and removing the second substrate.

Abstract: Systems and methods of manufacturing etchable heterojunction interfaces and etched heterojunction structures are described. A bottom layer is deposited on a substrate, a transition etch layer is deposited over the bottom layer, and a top layer is deposited over the transition etch layer. The transition etch layer substantially prevents the bottom layer and the top layer from forming a material characterized by a composition substantially different than the bottom layer and a substantially non-selective etchability with respect to the bottom layer. By tailoring the structure of the heterojunction interface to respond to heterojunction etching processes with greater predictability and control, the transition etch layer enhances the robustness of previously unreliable heterojunction device manufacturing processes. The transition etch layer enables one or more vias to be etched down to the top surface of the bottom layer in a reliable and repeatable manner.

Abstract: A p-type ZnO single crystal having a low resistance; and a method for producing the same providing a substrate (2) in a vacuum chamber (1), supplying to the substrate (2) atomic gases of Zn, O, and N (p-type dopant) and Ga (n-type dopant) in a manner wherein the feeds of N and Ga are controlled in such a manner that the ratio of N:Ga in a crystal is 2:1, and thereby growing a p-type ZnO single crystal containing N and Ga.

Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.

Abstract: High quality epitaxial layers of monocrystalline piezoelectric materials (106) and acousto-optic materials (108) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (110). The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Acousto-Optic devices (1018) may be formed using the piezoelectric materials (106) and the acousto-optic materials (108) and integrated with devices formed within the substrate (102) or other devices (1016, 1018) formed using other epitaxially grown monocrystalline layers.

Abstract: A semiconductor ceramic device comprises a body composed of a semiconductor ceramic having a positive resistance-temperature coefficient primarily composed of barium titanate and electrodes provided on the body, in which the resistance-temperature coefficient is 9%/° C. or more, resistivity is 3.5 ∩·cm or less, and withstand voltage is 50 V/mm or more. As the semiconductor ceramic forming the body provided in a thermistor having positive resistance-temperature characteristics, a semiconductor ceramic having a positive resistance-temperature coefficient is used, in which the semiconductor ceramic has an average particle diameter of about 7 to 12 &mgr;m and comprises barium titanate as a major component and sodium in an amount of about 70 ppm or less on a weight basis.

Abstract: This invention provides a Group III-V compound semiconductor that is free from the limitation of the shape and the size, is economical, is excellent in photo-electric characteristics (photo-electric conductivity photo-electromotive current, photo-electromotive force, quantum efficiency), can freely select the optical gap over a broad range, has high performance as a photo-semiconductor, has limited change with time, and is excellent in response, environmental resistance characteristics and high temperature resistance. The Group III-V compound semiconductor contains a Group III element and a Group V element of the Periodic Table as principal components, and contains also 0.1 atom % to 40 atom % of hydrogen atoms and 100 ppm to 20 atom %, based on the sum of the atomic numbers of the Group III element and the Group V element, of at least one element selected from among Be, Mg, Ca, Zn and Sr.

Abstract: Arrangement (1) for decreasing galvanic corrosion between metal components that includes at least a first component (2) in which a first metal is a part, and at least a second component (3) in which a second metal is a part, whereby the first metal has a higher normal-electrode potential (e0) than the second metal. The first component (2) is intended, after mounting, to be in electrical contact with the second component (3). The first component (2) is coated with a substantially continuous surface layer (4) that is adjusted to give the second component (3) an insignificant galvanic corrosion velocity after mounting. The invention is preferably applied in association with attachment elements such as bolt or screw joint reinforcements, which include a more noble metal than the component or the components with which the attachment element should be in contact with after mounting, and is particularly, preferred for vehicle components.

Abstract: A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.