Abstract: A superconducting joint includes a niobium-tin superconducting composite member, a niobium-tin superconducting wire diffusion bonded to the superconducting composite, a spacer diffusion bonded to the superconducting wire, a support diffusion bonded to the spacer and a superconducting member in electrical contact with the superconducting composite. According to the method of the invention, a wire comprising unreacted niobium and tin is machined to form a tapered end having a first tapered surface exposing the wire interior and an opposing surface. A complementary spacer having the taper substantially similar to that of the wire is assembled with the wire so that the tapered wire and the tapered spacer in surface contact with one another such that the spacer occupies the area of the wire removed by machining and the exposed tapered surface remains still exposed.

Abstract: Composite structures having a higher density, stronger reinforcing niobium based alloy embedded within a lower density, lower strength niobium based alloy are provided. The matrix is preferably an alloy having a niobium and titanium base according to the expression:Nb--Ti.sub.32-45 --Al.sub.3-18 --Hf.sub.8-15and the reinforcement may be in the form of strands of the higher strength, higher temperature niobium based alloy. The same crystal form is present in both the matrix and the reinforcement and is specifically body centered cubic crystal form.

Abstract: Composite structures having a higher density, stronger reinforcing niobium based alloy embedded within a lower density, lower strength niobium based cladding alloy are provided. The cladding is preferably an alloy having a niobium and titanium base according to the expression:Nb.sub.balance -Ti.sub.27-40.5 -Al.sub.4.5-10.5 -Hf.sub.1.5-5.5 V.sub.0-6 Cr.sub.4.5-8.5 Zr.sub.0-1 C.sub.0-0.5,where each metal of the metal/metal composite has a body centered cubic crystal structure, andwherein the ratio of concentrations of Ti to Nb (Ti/Nb) is greater than or equal (.gtoreq.) to 0.5, andwherein the maximum concentration of the Hf+V+Al+Cr additives is less than or equal (.ltoreq.) to the expression:16.5+5.times.Ti/Nb.The reinforcement may be in the form of plates, sheets or rods of the higher strength, higher temperature niobium based reinforcing alloy. The same crystal form is present in both the matrix and the reinforcement and is specifically body centered cubic crystal form.

Abstract: Composite structures having a higher density, stronger reinforcing niobium based alloy embedded within a lower density, lower strength niobium based alloy are provided. The matrix is preferably an alloy having a niobium and titanium base according to the expression:Nb-Ti.sub.35-45- Hf.sub.10-15,and the reinforcement may be in the form of strands of the higher strength, higher temperature niobium based alloy. The same crystal form is present in both the matrix and the reinforcement and is specifically body centered cubic crystal form.

Abstract: There is provided a non-single crystalline material characterized by containing Ir, Ta and Al at the following respective composition rates:______________________________________ 28 atom percent .ltoreq. Ir .ltoreq. 90 atom percent, 5 atom percent .ltoreq. Ta .ltoreq. 65 atom percent, and 1 atom percent .ltoreq. Al .ltoreq. 45 atom percent. ______________________________________There is also provided a member comprising a substrate and a film composed of said non-single crystalline material being disposed on said substrate.

Abstract: Intermetallic compounds or alloys comprising niobium with and from 10 to 28 atomic percent titanium and from 14 to 17.5 atomic percent aluminum characterized by very high temperature melting points, high compressive strength at room temperature, higher room temperature compressive strength after annealing, machineable with conventional tooling, a B2 crystal structure in the as-cast condition, a two-phase microstructure in the annealed condition consisting of a B2 matrix and a second phase with the A15 crystal structure, an expected low value for coefficient of thermal expansion and susceptible to fabrication into single crystals.

Abstract: An iron-based alloy with improved performance with exposure to oxygen-sulfur mixed gases with the alloy containing about 9-30 wt. % Cr and a small amount of Nb and/or Zr implanted on the surface of the alloy to diffuse a depth into the surface portion, with the alloy exhibiting corrosion resistance to the corrosive gases without bulk addition of Nb and/or Zr and without heat treatment at temperatures of 1000.degree.-1100.degree. C.

Abstract: A Type II superconducting filament is formed by surrounding a Type II superconducting alloy ingot with layers of a fine grain Type II superconducting alloy sheet, a barrier layer and a copper extrusion can. The composite is then reduced to a filament by hot and cold working.

Abstract: Superconducting tapes have an inner laminate comprised of a parent-metal layer selected from the group niobium, tantalum, technetium, and vanadium, a superconductive intermetallic compound layer on the parent-metal layer, and a reactive-metal layer that is capable of combining with the parent-metal and forming the superconductive intermetallic compound. A superconducting joint between contiguous tapes comprises, a continuous precipitate of the superconductive intermetallic compound fused to the tapes forming a continuous superconducting path between the tapes.

Abstract: A multifilament superconducting strand for use at industrial frequencies and made from an initial billet comprising a superconducting core niobium-titanium alloy surrounded by an anti-diffusion barrier layer which is in turn surrounded by a copper based matrix material, with the strand being made from the billet by successive stages of extrusion, wire-drawing, and assembly, wherein the strand includes 5.times.10.sup.5 to 5.times.10.sup.6 filaments each constituted by the superconducting core reduced to a diameter in the range 50 nm to 150 nm, the filaments being separated from one another by a distance lying in the range 30 nm to 100 nm, which distance is occupied by the anti-diffusion layer and the matrix material. The matrix material contains in excess of 8% manganese when the anti-diffusion layer is made of niobium, or alternatively, the anti-diffusion layer may be of an iron-containing alloy with the matrix containing copper and nickel.

Abstract: A thin film magnetic head comprises a substrate, a lower magnetic layer, an insulating layer and an upper magnetic layer formed in that order on said substrate, and a protective layer formed on said upper magnetic layer and having an end surface exposed on the running surface directed to a recording medium. The protective layer consists essentially of 20 to 95 mole % of at least two of ZrO.sub.2, TiO.sub.2 and SiO.sub.2 and 5 to 80 mole % of at least one of WO.sub.3 and MoO.sub.3, and has controlled Vickers hardness of 400 to 700 kgf/mm.sup.2 with reduced residual stress of 0.1-0.5 GPa.

Abstract: A method of coating a substrate comprises plasma spraying a prealloyed feed powder onto a substrate, where the prealloyed feed powder comprises a significant amount of an alloy of stainless steel and at least one refractory element selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The plasma spraying of such a feed powder is conducted in an oxygen containing atmosphere and forms an adherent, corrosion resistant, and substantially homogenous metallic refractory alloy coating on the substrate.

Abstract: An electrical conductor is particularly suitable for use as an insoluble anode in electrowinning processes, and is composed of an inner core of copper coated with an outer, thinner layer of a transition metal, preferably selected from among tantalum, titanium and niobium. The conductor is manufactured by a process including the steps of inserting a copper bar inside a relatively thin tube made of the selected transition metal, inserting the tube containing the copper bar inside a copper tube to obtain a three-metal structure, submitting the three-metal structure to a drawing process to produce a three metal wire, and dipping the three-metal wire in a solvent to remove the outer copper layer to produce a bimetallic wire.

Abstract: A thin film, solid state device includes a conductive thin film formed on a substrate, with a resistive layer overlying the conductive thin film and with electrical contacts formed on the upper surface of the resistive layer. Electrical current flows between the electrical contacts through the resistive overlayer and the conductive thin film. The resistivity and dimensions of the resistive layer are such that, preferably, only a small fraction of any current flowing between the electrical contacts will flow solely within the resistive layer, yet the magnitude of the current will not be reduced below a desired signal level due to the presence of the resistive layer. The resistive layer is comprised of material which will not diffuse into the thin film conductive layer during device processing. Nitrogen doped tantalum is the preferred material for the resistive layer.

Abstract: A metal shaft is joined to a permanent magnet by a seal formed of a thin layer of a metal on the magnet which forms a bond with the magnet. A layer of a solorable metal provided on the thin layer and a layer of a low melting point solder contacting the metal shaft and layer of solderable metal.

Abstract: A process for controlling the oxygen content in tantalum material comprising heating the material under a hydrogen-containing atmosphere in the presence of a getter composite comprising a getter metal encapsulated in tantalum.

Abstract: Disclosed herein is a multifilament superconducting wire of Nb.sub.3 Al comprising a core part of copper or copper alloy which is provided in a central portion as a stabilizing material and a peripheral part which is provided around the core part and formed by an Nb.sub.3 Al filament embedded in a matrix of copper or copper alloy, such that the ratio of copper or copper alloy forming the core part and the peripheral part to the Nb.sub.3 Al filament is at least 1 and not more than 5 in sectional area ratio and the diameter of the core part is at least 1/5 of the wire diameter.

Abstract: A backside metalization scheme for semiconductor devices includes a vanadium layer disposed on the backside of a wafer and a silver layer disposed on the vanadium layer. An optional intermediate layer comprising either a mixture of vanadium and silver or nickel may be disposed between the vanadium layer and the silver layer. The vanadium layer exhibits excellent adhesion characteristics on the backside of wafers having a finish at least as fine as a 300 grit equivalency while the silver layer exhibits excellent solderability characteristics.

Abstract: In a dual insulation thin film type electroluminescence device comprising a first insulation layer, a light emitting layer and a second insulation layer between a transparent electrode layer and a back electrode layer, a tantalum oxynitride layer is provided between the transparent electrode layer and the first insulation layer to prevent increase of the resistance in the transparent electrode and to prevent increase of current leakage in the insulation layer so that a high luminescence can be achieved.

Abstract: The present invention provides a method for applying a hardface alloy coating on a metal substrate concurrently with a nitriding procedure so that the hardface coating is deposited and nitrided in one step. The deposition of the metal hardface coating is conducted in an atmosphere of nitrogen under nitriding conditions. The single step of metal deposition and nitriding is made possible by using a hardface alloy composition containing 20-75% niobium, 5-35% titanium and 10-60% tungsten.

Abstract: A getter wire is made by wrapping alternate layers of getter metal and refractory metal around an ingot of refractory metal. The composite ingot thus formed is reduced to wire, preferably by extrusion and drawing. The multi layers of refractory and getter metals can then be heated to form an alloy of the two metals from which the getter is evaporated during use. A preferred combination is tantalum as refractory and titanium as getter.

Abstract: A magnetic field shield including a superconductive film characterized in that the magnetic field shield comprises a superconductive film layer constituted primarily of a mixed crystalline body of niobium nitride and titanium nitride laminated on a metal substrate, that the magnetic field further comprises a nobium-titanium alloy layer or a metal film layer in the above lamination, that the magnetic field comprises a plurality of the above-mentioned layers, and that the magnetic field has a plurality of small holes passing through the layers in the direction of the thickness. The magnetic field shield of the present invention produces an excellent magnetic field shielding effect due to a superconductive characteristic peculiar to the superconductive film layer constituted primarily by a mixed crystalline body of niobium nitride and titanium nitride. The cooling effect of the metal substrate maintains the magnetic field shielding effect at a high level.

Abstract: A materials system is provided which is adapted for use in jet engines operable at high temperature and at lower density than possible with nickel base superalloys. A range of niobium base alloys is combined with a range of protective metallic coatings to provide a material system which permits a wide variety of alloy properties and performance characteristics to be combined in structural components of jet engines.

Abstract: The coated article includes a refractory metal substrate having an oxidation resistant intermetallic layer formed in situ thereon; e.g., a fused refractory metal silicide layer, and a ceramic layer applied on and adhering to the intermetallic layer to provide enhanced high temperature properties and improved resistance to premature catastrophic failure in high temperature oxidizing environments where dissimilar materials are present that may destructively react with the intermetallic layer.

Abstract: Disclosed is an aluminum nitride circuit substrate comprising an aluminum nitride plate and a conductive material bonded to the aluminum nitride plate through a metallized layer formed on the bonding surface of the aluminum nitride plate, the conductive material being of a metallic material which has a thermal expansion coefficient of 2.times.10.sup.-6 to 6.times.10.sup.-6 /.degree.C.The aluminum nitride circuit substrate according to this invention is free from the generation of crack caused by the difference of the thermal expansion coefficients of AlN plate and a conductive material bonded to the AlN plate to improve the reliability of the elements.

Abstract: A magnetic, solid state memory cell or sensor includes a magnetoresistive, ferromagnetic layer and a resistive layer overlying the magnetoresistive layer. The resistivity and dimensions of the resistive layer are such that, preferably, only a small fraction of any sense current flowing through the cell or sensor will flow between input and output contacts by way of the resistive layer, yet the magnitude of the sense current will not be reduced below a desired signal level due to the presence of the resistive layer. The resistive layer is comprised of a material which will not diffuse into the magnetoresistive layer. A compound or mixture of a metal and either nitrogen or oxygen, such as tantalum and nitrogen, is preferred as the resistive layer. It is also preferred that the resistive layer be nonmagnetic.

Abstract: Disclosed is a circuit substrate comprising an alumina plate and an aluminum nitride plate bonded to the alumina plate through metallized layers formed on the respective bonding surfaces of the alumina plate and the aluminum nitride plate and a buffering layer provided between the metallized layers, the buffering layer being of a metallic material(a) which undergoes plastic deformation by recrystallization at a temperature of not higher than 500.degree. C.,(b) which has a tensile strength of not higher than 35 kg.f/mm.sup.2 at a temperature of 500.degree. C., and(c) which has an elongation of not less than 10% at a temperature of 500.degree. C.The circuit substrate of this invention can provide a circuit substrate being excellent in heat dissipating characteristic and free from the generation of crack on an operation.

Abstract: A superconductor for magnetic field shielding comprising a substrate, at least one superconductor film layer, which is laminated on the substrate, and a plurality of small holes 2 which pass through the substrate and the superconductor film layer, wherein the thickness of the superconductor film layer is 100 .mu.m or less.The superconductor of the present invention uses both superconductive shielding and electromagnetic shielding to deliver extremely high magnetic shielding performance.

Abstract: A joint construction is provided for lined equipment in which mutually weldable backing plates or sheets are lined with layer or facing sheets weldable to each other but not to the backing. An intermediate metal is optionally included between the backing and layer. A channel is provided between the layer sheets overlying the joint between the backings. A bridging strip weldable to the layer sheets is disposed in the channel and welded to the respective edges of the layer sheets. In some embodiments spaced strips of the layer material are disposed under the respective edges and the bridging strip and welds are made to join the spaced strips, the bridging strip and the edges of the layer sheets.

Abstract: A perpendicular magnetic recording medium comprises a recording medium base, a lower layer formed on the recording medium base, and an upper layer formed on the lower layer. The lower layer is made of a first material including cobalt, chromium and one or more elements other than cobalt and chromium. On the other hand, the upper layer is made of a second material including cobalt, chromium and one or more elements other than cobalt and chromium. A quantity of the one or more elements added to cobalt and chromium making up the second material is less than a quantity of the one or more elements added to cobalt and chromium making up the first material.

Abstract: A perpendicular magnetic recording medium comprises a recording medium base, a lower layer formed on the recording medium base, and an upper layer formed on the lower layer. The upper layer is made of cobalt-chromium, and the lower layer at least includes cobalt and chromium.

Abstract: An optical mirror in which a mirror surface formation material, e.g. aluminum, is coated on a substrate consisting of a c/c composite and having a predetermined shape. The coated mirror surface formation material layer is ultrahigh precision machined to a small thickness such that its deformation is suppressed by the substrate.

Abstract: A multifilamentary, copper or copper alloy clad superconductive wire, comprising a superconductive, intermetallic compound Nb.sub.3 Sn or V.sub.3 Ga, having an A-15 crystal structure, and at least one additive metal from the group consisting of rare earth elements of atomic number 57 to 71, Th, U, Ti, Zr, Hf, V, Nb, Ta, Mo, Fe, Co, Ni, Pd, Cu, Ag, Al, and Pt. The additive is present in the wire within the A-15 phase in the form of uniformly and finely distributed, at least partially undissolved axially parallel inclusions at grain boundaries of the crystals and/or at an interface between the A-15 phase and the copper or copper alloy, or at an interface between the A-15 phase and a separate phase.

Abstract: Metal-ceramic joined articles having a splendid joint strength can be provided easily, even when the metallic member has a largely different thermal expansion coefficient from that of the ceramic member of the metal-ceramic article.

Abstract: Certain magnetic alloys are useful for a variety of applications including for magneto-optic memory storage media (optical disks). These magnetic alloys are difficult to protect against composition alteration through such processes as corrosion, oxidation, diffusion, etc. The invention is a multiple-layer structure which protects the magnetic alloys against diffusion as well as corrosion and oxidation without affecting performance of the magnetic alloy in the optical disk. Such magnetic memory storage devices exhibit high bit density and long life. They are erasable and inexpensive and highly advantageous for use in high-bit memory storage devices.

Abstract: A source for vapor depositing manganese onto a substrate in a vacuum. The source is formed by a chain of metallic beads fused around a wire. The material of the wire has a high recrystallization temperature, the beads consist of an alloy of manganese and one or more other substances from the group of metals and metalloids having a saturated vapor pressure much lower than that of manganese, and the fusion temperature of the alloy is lower than that of pure manganese and lower than the recrystallization temperature of the material of the wire. The beads are formed by securing blocks of the alloy to the wire by means of electric welding, after which the blocks are fused around the wire and are cooled.

Abstract: A steel element for reinforcing a rubber article comprises a brass layer and at least one additional outer film of metal or metal alloy selected from the group containing Fe, Ni, Mn, Cr, Mb, Va, Ti, Zi, Nb, Ta, Hf and W.

Abstract: An integrated semiconductor circuit consisting of a silicon substrate having an impurity doped circuit therein, and a layer of silicon dioxide formed on the substrate and having a contact hole therein overlying the circuit. An outer contact interconnect level composed of aluminum or an aluminum alloy provides electrical contact to the circuit. A tantalum disilicide diffusion barrier layer is disposed between the circuit and the interconnect level, with a layer of substantially pure tantalum both above and below the tantalum disilicide diffusion barrier layer.

Abstract: A magnetic recording medium for perpendicular magnetization includes a base of a nonmagnetic material, a first magnetic layer of a soft magnetic material on a surface of the base, a second magnetic layer having perpendicular anisotropy on a surface of the first magnetic layer, the second magnetic layer being magnetized in a transverse direction thereof. The second magnetic layer is composed of a three-element alloy of cobalt, chromium, and tantalum, cobalt being a main component with chromium and tantalum added thereto.

Abstract: A superconducting tape or wire with an improved critical field is formed of alternating layers of a niobium-containing superconductor such as Nb, NbTi, Nb.sub.3 Sn or Nb.sub.3 Ge with a thickness in the range of about 0.5-1.5 times its coherence length, supported and separated by layers of copper with each copper layer having a thickness in the range of about 170-600 .ANG..

Abstract: Disclosed is a novel three-layered metallic interlayer material which provides good diffusion bonding between titanium alloys and steel or between titanium alloys and nickel alloys. The interlayer is comprised of three separate layers of metals as follows: a nickel layer which is placed in contact with the steel or nickel alloys, a Group V-B metal layer which is placed in contact with the titanium alloy and a copper layer which is sandwiched between the nickel and the Group V-B metal layers.

Abstract: A minimal corrosion resistor structure and deposition technique for superconductive circuits, with mutually protective niobium oxide passivation ring, gold corrosion barrier film and titanium resistive layer. Niobium has an intrinsic oxide of Nb.sub.2 O.sub.5, which must be removed from a contact area designated by an opening in photoresist; the development process leaves a photoresist overhang. The corrosion barrier film is deposited through the opening. The resistive metal layer is deposited over the corrosion barrier film through the same opening. The gold corrosion barrier film prevents the titanium resistive metal layer from making corrosive contact with the niobium. The titanium resistive metal layer encapsulates the gold corrosion barrier film to prevent diffusion between the gold and further layers to be deposited subsequently. It would normally be possible for the titanium to spill over the gold and make corrosive intimate contact with the niobium; a self-alignment technique prevents such contact.

Abstract: A new material consisting of a multilayer crystalline structure which is coherent perpendicular to the layers and where each layer is composed of a single crystalline element. The individual layers may vary from 2.ANG. to 100.ANG. or more in thickness.

Abstract: The present invention relates to a novel metallurgical coating system which provides corrosion resistance and non-stick properties to metallic components which are subjected to unusually severe operating conditions. The coating system comprises a first layer comprising tantalum which is deposited upon a substrate and a second layer comprising molybdenum disilicide which is deposited upon the first layer.

Abstract: A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.

Abstract: A thin film of magnetic recording material is sputter deposited over a base layer of gold and tantalum on a polished substrate. A protective layer of gold and tantalum is deposited overlaying the magnetic recording film. A solid lubricant layer such as carbon, preferably in the form of graphite, gold, silver, tin, molybdenum disulfide, and tungsten disulfide is sputter deposited or ion plated over the protective layer to reduce wear. The recording contacting portion of the recording head is similarly coated with a solid lubricant material. Other suitable protective materials include tantalum, niobium, tungsten and nitrides and carbides of such metals. In a preferred method for making such recording members, the layers are successively sputter deposited in an evacuated sputter chamber, whereby the recording layers and protective coatings are formed in a continuous process requiring only one pump down.

Abstract: A composite superconductor that comprises a first alloy selected from the class consisting of Nb-Sn-X, V-Ga-X, and V-Si-X wherein X is selected from the class consisting of yttrium, tellurium, lanthanum, cerium, gadolinium, erbium, and mixtures thereof and is in an amount up to 300% of the solubility limit of X in the alloy; a second alloy selected from the class consisting of Cu-Ga, Cu-Ga-Al, Cu-Su, and Cu-Si; and a continuous layer of an intermetallic A-15 compound between the alloys, the layer being formed by a solid state reaction between the alloys.

Abstract: A superconducting wire comprising a superconducting filament and a beryllium strengthened bronze matrix in which the addition of beryllium to the matrix permits a low volume matrix to exhibit reduced elastic deformation after heat treating which increases the compression of the superconducting filament on cooling and thereby improves the strain characteristics of the wire.

Abstract: A multi-layer superconducting shield for shielding superconducting electronic devices from stray magnetic fields. In one embodiment the shield of the present invention comprises alternating concentric layers of a transition metal having a high transition temperature and a metal alloy formed from copper and a non-transition metal, said transition metal and metal alloy forming an interface, and a layer of A.sub.3 B-compound structure metal at the interface of said transition metal and metal alloy. The A.sub.3 B-compound structure metal is a high transition temperature superconductor.In a second embodiment the superconducting shield comprises a thin film of a high transition temperature superconducting nitride compound deposited on a cylindrical substrate. The nitride is deposited by reactive rf sputtering.

Abstract: A thin film of magnetic recording material is sputter deposited over a base layer of gold and tantalum on a polished substrate. A protective layer of gold and tantalum is deposited overlaying the magnetic recording film. A solid lubricant layer such as carbon, preferably in the form of graphite, gold, silver, tin, molybdenum disulfide, and tungsten disulfide is sputter deposited or ion plated over the protective layer to reduce wear. The recording contacting portion of the recording head is similarly coated with a solid lubricant material. Other suitable protective materials include tantalum, niobium, tungsten and nitrides and carbides of such metals. In a preferred method for making such recording members, the layers are successively sputter deposited in an evacuated sputter chamber, whereby the recording layers and protective coatings are formed in a continuous process requiring only one pump down.