Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.

Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−xOx]2, where M is a metal and X is 0≦X<1.

Abstract: A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh epitaxially grown on said MgO buffer layer.

Abstract: An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of IrxMn100−x, wherein x stands for a value by atomic % satisfying the expression, 2≦x≦80.

Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract: A magnetic garnet single crystal film used for a magnetostatic wave device has a Pb content in the range of from more than zero to about 4,000 ppm by weight.

Abstract: A compliant substrate for the formation of semiconductor devices includes a crystalline base layer and a thin-film crystalline layer on and loosely bonded to the base layers. The thin-film layer has a high degree of lattice flexibility. A compliant substrate for formation of semiconductor devices may also include a crystalline base layer, and, on the base layer, a thin film layer having a lattice constant different from the lattice constant of the base layer. A method for formation of a compliant substrate for formation of semiconductor devices includes forming a thin film layer on a first substrate, bonding a first surface of the thin film layer to a surface of a second substrate having a lattice constant different from the lattice constant of the thin film layer either with or without twist bonding, and removing the first substrate to expose a second surface of the thin film layer.

Abstract: A semiconductor substrate comprising a single crystal substrate having thereon a mask and a Group III-V compound semiconductor epitaxially grown layer, said mask comprising an insulating material thin film or high melting point metal thin film having a plurality of slit-like exposed areas running at an angle in excess of 0°, and said Group III-V compound semiconductor epitaxially grown layer being formed by growing a Group III-V compound semiconductor starting from each of said plurality of exposed areas and conjunction-integrating the grown semiconductors on said mask.

Abstract: The present invention relates to a coated body such as a cutting tool insert comprising a wear resistant coating and a cemented carbide body particularly useful for the machining of cast iron parts by turning, milling or drilling at high speeds. The cemented carbide body consists of WC, 3.5-9 wt-% Co and <2 wt-% carbides of Ta, Ti and Nb. It has a core containing finely distributed eta phase islands and an intermediate zone 50-250 &mgr;m thick essentially free of eta phase and with nominal Co content whereby the binder phase in the intermediate zone is present as smaller original islands and larger islands transformed from original eta phase. These latter Co-islands therefore have a size and distribution essentially the same as that of the eta phase in the core. There may be present a thin surface zone free of eta phase with a Co content lower than the nominal Co-content.

Abstract: A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.

Abstract: A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate.

Abstract: An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.

Abstract: The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal.

Abstract: Ceramic laminate material comprising at least one dense layer of a perovskite material and at least one layer of a dense non-perovskite material and/or at least one layer of a dense superstructural perovskite material.

Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface is an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

Abstract: Provided are a zinc oxide thin film having an X-ray diffraction peak of the (103) plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).

Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Abstract: A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

Abstract: A process for producing zinc oxide fine particles comprising heating a mixture comprising a zinc source, a carboxyl-containing compound, and an alcohol; a process for producing zinc oxide-polymer composite particles, which comprises heating a mixture comprising a zinc source, a carboxyl-containing compound, a polymer, and an alcohol at a temperature of 100° C. or higher; a process for producing inorganic compound particles having on their surface a cluster of thin plate like zinc oxide crystals with their tip projecting outward, which comprises heating a mixture comprising a zinc source, a carboxyl-containing compound, lactic acid or a compound thereof, and an alcohol at a temperature of 100° C.

Abstract: A composition of materials that is ferromagnetic and whose properties may be varied by means of an applied electric field and has at least a first and second layer. The first layer may be a substance of the formula III-V, wherein III is at least one element of Group IIIA, and V is at least one of the elements As and Sb and may include other elements of Group VA. The second layer may be a substance of the formula Mn-V, wherein V is at least one of the elements As and Sb present in the first layer. This second layer may be less than approximately 500 nm thick, but thick enough to be ferromagnetic. The first layer and said second layer may be crystalline.

Abstract: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.

Abstract: A bulk superconductor including a plurality of units each composed of a substrate and a superconductive layer of R--Ba--Cu--O, where R is selected from La, Nd, Sm, Eu, Gd, Y, Dy, Ho, Er, Tm, Yb and mixtures thereof, formed on the substrate. The units are arranged in a row or in a matrix such that the superconductive layers of respective units are superconductively joined with each other.

Abstract: A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.

Abstract: A film structure includes a conductive oxide thin film formed on a substrate having a silicon (100) face at its surface. The conductive oxide thin film is an epitaxial film composed mainly of strontium ruthenate. At least 80% of the surface of the conductive oxide thin film has a Rz of up to 10 nm. On the conductive oxide thin film having excellent surface flatness and crystallinity, a ferroelectric thin film, typically of lead zirconate titanate, having surface flatness and spontaneous polarization can be formed.

Abstract: A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.

Abstract: A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer.

Abstract: An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of Ir.sub.x Mn.sub.100-x, wherein x stands for a value by atomic % satisfying the expression, 2.ltoreq.x.ltoreq.80.

Abstract: On the (100) surface of a perovskite of the type ABO.sub.3, a Ruddlerden-Popper AO*(ABO.sub.3).sub.n layer is generated by exposing the perovskite to an oxidizing atmosphere at temperatures above 750.degree. C.

Abstract: A method and apparatus for creating unique gemstones is provided. The method comprises the steps of optically contacting the gemstones of interest followed by a heat treatment of the composite gemstone. The heat treatment step increases the bond strength and therefore the resistance of the bond to reversal. In one aspect of the invention, a composite gem is fabricated by bonding a naturally occurring gem to an artificial gem to form a single composite gemstone of large size that outwardly appears to be a single natural gem. The composite gem may be fabricated at a fraction of the cost of a natural stone of the same size. In another aspect of the invention, an intensely colored natural stone is bonded to a colorless or lightly colored artificial stone. This composite retains the intense color associated with the natural stone while enjoying the brilliance, depth, and size resulting from the combination of stones.

Abstract: The present invention relates to methods and compositions for the growth and alignment of crystals at biopolymeric films. The methods and compositions of the present invention provide means to generate a variety of dense crystalline ceramic films, with totally aligned crystals, at low temperatures and pressures, suitable for use with polymer and plastic substrates.

Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract: A non-linear optical thin film layer system (10) is provided for integrated optics applications where a non-linear optical thin film layer (18) is integrated with a gallium-arsenide substrate (12). A first encapsulating layer (20) is deposited on lower surface (26), peripheral sides (30), and an upper surface peripheral region (28) of said gallium-arsenide substrate (12). A second encapsulating and buffer layer (14) is epitaxially grown on an upper surface of said gallium-arsenide substrate (12) and on the encapsulated upper surface peripheral region (28) of said gallium-arsenide substrate (12). A perovskite layer (16) is epitaxially grown on an upper surface of the layer (14). A non-linear optical thin film layer (18) is epitaxially grown on an upper surface of the perovskite layer (16) and is lattice matched to this layer.

Abstract: A ceramic composite material consisting of two or more crystal phases of different components, each crystal phase having a non-regular shape, said crystal phases having three dimensional continuous structures intertwined with each other, at least one crystal phase thereof being a single crystal. Further, by removing at least one crystal phase from this ceramic composite material, there is provided a porous ceramic material consisting of at least one crystal phase and pores, said crystal phase and pores having non-regular shapes and being three dimensionally continuous and intertwined with each other.

Abstract: On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

Abstract: A large, monolithic sapphire structure for use in mid-IR military applications, such as, for example, a window or screen for radar detection equipment. The structure is made by bonding together two or more smaller sapphire panes by a method including the steps of coating a surface of each of the panes with a magnesia vapor and contacting the magnesia-coated surfaces with each other in the presence of a hydrogen-containing gas at a temperature (e.g., about 1500.degree. C. and 2000.degree. C.) and for a time period (e.g., about 45 minutes to about ten hours) sufficient to form a continuous magnesia-alumina spinel interlayer bond between the panes.

Abstract: A monocrystalline silicon wafer is improved so as not to cause enhanced oxidation at the time of forming a gate oxide film. The monocrystalline silicon wafer includes a monocrystalline silicon substrate. The monocrystalline silicon substrate has potassium concentration of at most 2.times.10.sup.11 atoms/cm.sup.2 at an outer surface thereof.

Abstract: A layer of conformationally adaptive organic molecules are used in epitaxially layered structures to accommodate lattice mismatch between layers at least one of which is of a nonorganic crystalline material. Such a layer on a substrate layer may constitute the epitaxially layered structure or the conformationally adaptive organic molecule layer may be used to accommodate a lattice mismatch between two other layers or the substrate and another layer.

Abstract: Metal oxide nanorods and composite materials containing such nanorods. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000.

Abstract: An epitaxial structure for a GaP light-emitting diode comprises an n-type GaP single crystal substrate on which is formed a plural buffer layer epitaxially grown on the single crystal substrate, in which the buffer layer has a lower etch pit density than the etch pit density of the single crystal substrate, etch pit density decreases with each upper layer, and a GaP active layer is formed on the buffer layer.

Abstract: A superconducting Josephson junction element including a first, a-axis oriented, superconductive metal oxide crystal grain having a first area of a {001} plane, and a second, c-axis oriented, superconductive metal oxide crystal grain having a second area of a {110} plane, wherein the first and second crystal grains are in contact with each other at the first and second areas to form a grain boundary therebetween.

Abstract: An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 .mu.m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.

Abstract: A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Abstract: Disclosed herein is a magnetostatic wave device that employs a single-crystal thin film of the formula Y.sub.3-x M.sub.x Fe.sub.5-y N.sub.Y O.sub.12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0<x.ltoreq.1.0 and 0<y.ltoreq.1.5, respectively) which is formed by liquid phase epitaxy on a single-crystal substrate of Gd.sub.3 Ga.sub.5 O.sub.12, characterized in that said single-crystal thin film has a lattice constant larger than that of said single-crystal substrate, with the difference (.increment.a) between the two lattice constants being in the range defined by 0.0004 nm.ltoreq..increment.a.ltoreq.0.001 nm. It has good characteristic properties (e.g., low insertion loss and ripple).

Abstract: A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Abstract: In order to provide a crystal oriented high quality thallium group superconducting wire having a high critical current density, thallium group superconducting film is formed on oxide single crystal fiber having plane facets and polygonal cross section in the thallium group superconducting wire, wherein c-axis of the thallium group superconducting film is oriented perpendicularly, and a- and b-axis are oriented in parallel to the longitudinal direction of the above fiber, respectively, and resulting to obtain a high quality thallium group superconducting wire with Jc of 10.sup.5 A/cm.sup.2 or more at 77K.

Abstract: A high critical temperature superconducting Josephson device includes a bicrystal substrate formed of a first single crystal substrate and a second single crystal substrate, with end faces of the first and second single crystal substrates having different crystal orientations and being joined to each other. A first superconducting electrode formed of a first film of a high critical temperature superconductor material is located on the first single crystal substrate, whereas a second superconducting electrode formed of a second film of a high critical temperature superconductor material is located on the second single crystal substrate. A bridge is formed of a third film of a high critical temperature superconductor material and located on the bicrystal substrate across a joint between said first and said second single crystal substrates.

Abstract: A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Abstract: A method of forming defect-free permanent bonds without the use of adhesives as well as devices formed by this method is disclosed. In general, the disclosed process allows similar or dissimilar crystalline, vitreous or dense polycrystalline ceramic, metallic or organic polymeric components to be first joined by optical contacting and then heat treated to stabilize the bond. The heat treatment can be performed at a low enough temperature to prevent interdiffusion between species, thus insuring that the bond is not subjected to excessive mechanical stresses and that the materials do not undergo phase changes.

Abstract: A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.

Abstract: Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.