Abstract: Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimeters per second per oersted, and magnetic domain diameter is less than 3 micrometers. A specified operational temperature range may extend from -150 to 150 degrees C.; accordingly, such devices are particularly suitable for operation aboard satellites, e.g., in satellite communications systems.

Abstract: A magnetic structure in which magnetic domains can propagate. The structure comprises a monocrystalline gallium garnet substrate having a surface which is substantially parallel to a (100) crystal plane and on which a layer of rare-earth iron garnet, having a partial substitution of maganese ions in iron sites, is grown in compression. By using a substrate material having a lattice constant between 12.23 and 12.38 .ANG., the compression of a epilayer having certain desired magnetic properties can be adjusted by adjusting the incorporation of lutetium and yttrium ions in the epilayer, without adversely affecting magnetic properties of the layer.

Abstract: An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO.sub.2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically tfhe alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.

Abstract: The manufacture of magnetic bubble devices typically involves a step of epitaxially depositing a layer of a garnet material on a substrate having suitable lattice parameters, e.g., layers of certain rare earth-iron garnets are conveniently deposited on a gallium-gadolinium garnet substrate. Deposition by liquid epitaxy has been preferred and, in particular, deposition from a melt comprising garnet materials in a PbO--B.sub.2 O.sub.3 flux.According to the invention, garnet layers are epitaxially grown from a melt comprising a PbO--V.sub.2 O.sub.5 flux. Growth from such melt has desirably slow kinetics, resulting in slow deposition as is beneficial especially for the growth of layers on an assembly of substrates. Additional benefits are ease of removal of liquid droplets remaining on a grown film upon removal from the melt, both by spinning and by rinsing.

Abstract: A magnetic device has a monocrystalline garnet substrate bearing a magnetic layer, in particular for use as information storage.Magmetic device having a monocrystalline substrate bearing a magnetic layer, with the substrate having a composition on the basis of rare earth metal gallium garnet of the general formula ##STR1## wherein A=gadolinium and/or smarium and/or neodym and/or yttriumB=calcium and/or strontiumC=magnesiumD=zirconium and/or tin and0<x.ltoreq.0.7; 0<y.ltoreq.0.7 and x+y.ltoreq.0.8.

Abstract: With the fabrication of a substrate material in the form of alkaline-earth gallate single crystals it has become possible to grow monocrystalline barium hexaferrite layers of high quality. These thin barium hexaferrite layers on the alkaline-earth gallate substrates are extremely suited as magnetic devices because of their very high uniaxial anisotropy and their small line width. Such magnetic devices can be used for passive microwave components, e.g. as resonance isolators or filters in the centimeter wavelength range, or as components in information storage technology, e.g. in magnetic cylindrical domain devices, especially in the field of very small (submicron) cylindrical domains.

Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.

Abstract: Structure of the insulator--semiconductor type constituted by a semiconducting crystalline substrate formed from a III-V compound of formula (A.sup.III B.sup.V) coated with an insulating layer, wherein the substrate has a specific crystalline orientation and wherein the insulator is a sulphide in accordance with the formula (A.sup.III B.sup.V)S.sub.4.It also relates to a process for the preparation of such a structure.Applications of the invention occur in the fields of microelectronics and optoelectronics.

Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and magnesium titanium oxide (MgTiO.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.

Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and scandium oxide (Sc.sub.2 O.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.