Abstract: A wafer-like metallic fashion article particularly fashion jewelry, a tag, a medal or watch dial which consists of a single crystal member provided on one or both of its sides with a material layer that is different from the wafer material and of 0.01 to 2 .mu.m thickness.

Abstract: An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3.

Abstract: A superconducting fiber comprising a core filament composed of an oxide such as MgO and a superconducting thin film layer composed of superconducting compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. and deposited continuously on an outer surface of said core filament.

Abstract: An optoelectronic signal recording and storage medium including a base layer, a conductive layer, a photoconductive layer and storage layer has a coherent crystal morphology throughout, even though the chemical and electrical properties of its layers are by choice dramatically different. The base layer is preferably made of monocrystalline sapphire grown in a manner as to allow the growth of the other layers directly on a surface of the base layer without the need to grind and polish that surface, thereby minimizing internal defects in the medium. The monocrystalline base layer also allows the acceptance of exeptionally uniformly distributed charges over wide areas of the medium, thereby enabling the medium to locally record and store minutely differing optoelectronic signals on a background of minimal noise, thus facilitating low light level electronic or optical recording and long term storage of signals and minimal energy readout of those stored signals.

Abstract: A laminated film comprising a thin film of single crystal YBa.sub.2 Cu.sub.3 O.sub.7-x having the (001) plane in the direction parallel with the film surface and a continuous insulating ultrathin layer of MgO which is formed on said superconductor film and has a thickness of not larger than 10.ANG. and the (001) plane in a direction parallel with the film surface is provided.

Abstract: A single crystal oxide superconductor and the method of producing the same. One face of a substrate is coated with an oxide superconductor for forming an oxide superconductor layer. Then, the oxide superconductor layer is heated so that the oxide superconductor has a single crystalline structure.

Abstract: A gadolinium-lutetium-gallium garnet crystal having the formula:(Gd.sub.1-x Lu.sub.x).sub.3 (Gd.sub.y Lu.sub.z Ga.sub.1-y-z).sub.z Ga.sub.3 O.sub.12 (I)wherein x, y and z are number satisfying 0.ltoreq.x.ltoreq.0.4, 0.ltoreq.y.ltoreq.0.05 and 0.6.ltoreq.z.ltoreq.1.0, respectively.

Abstract: A circuit element is disclosed comprised of a substrate and an electrically conductive layer located on the substrate. The electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide. The substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during crystallization of the latter to an electrically conductive form. A barrier layer is interposed between the electrically conductive layer and the substrate. The barrier layer contains magnesium, a group IVA metal, or a platinum group metal, either in an elemental state or in the form of an oxide or silicide.

Abstract: Improvement in a superconducting thin film of a superconducting compound oxide containing thallium (T1) deposited on a substrate, characterized in that the superconducting thin film is deposited on {110} plane of a single crystal of magnesium oxide (MgO).

Abstract: Improvement in a superconducting thin film of a superconducting compound oxide containing bismuth (Bi) deposited on a substrate, characterized in that the superconducting thin film is deposited on {110} plane of a single crystal of magnesium oxide (MgO).

Abstract: A flexible electrically conductive article is disclosed comprised of an organic film, a conductive crystalline cuprate layer, and a release layer that together form a flexible electrically conductive assembly. The article is prepared by forming a conductive cuprate layer on a refractory substrate with the release interposed. After the cuprate layer is formed, the organic film is bonded to it, permitting the cuprate layer to be stripped intact from the substrate with the organic film. A crystal growth accelerating agent can be associated with the cuprate layer during its formation to minimize the heat energy required for crystallization.

Abstract: A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.

Abstract: A superconductive ceramic thin film-formed single-crystal wafer comprising a single-crystal wafer, an intermediate ceramic thin film formed on a surface of the single-crystal wafer, and a superconductive ceramic thin film formed on the intermediate ceramic thin film. The intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio of Bi.sub.2 Sr.sub.2 Ca.sub.x O.sub.y (provided that x: 1 to 2; and y: 6 to 7), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10. Alternatively, the intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl.sub.1 Ba.sub.2 Ca.sub.s O.sub.t (provided that s: 1 to 2; and t: 4.5 to 5.5) and Tl.sub.2 Ba.sub.2 Ca.sub.v O.sub.

Abstract: Composite materials are in the form of particles, such as bits and short filaments, and combinations of such particles with matrix materials forming high strength, wear and corrosion resistant materials and may be shaped to define cutting tools, dies, mold components, electrodes, bearing components, finishing tools and the like. Structures include substrates and synthetic diamond particles encapsulated therein or bonded thereto have superior grinding, cutting and finishing characteristics. Particles are in the form of microbits, spheroids, single crystals, short narrow filaments and metal whiskers coated with synthetic diamond formed with a core of graphite, metal, metal compounds, metal alloys, ceramic, cermet, glass and composites thereof. Filaments and bits are coated with a lubricating film of wear resistant metal.

Abstract: A composite is produced comprised of Y--Ba--Cu--O superconductive film having a zero resistance transition temperature of at least about 38 K, a zirconium dioxide film and a substrate wherein the zirconium dioxide film is intermediate the superconductive film and the substrate.

Abstract: The use of a highly stable, lattice-matched barrier layer grown epitaxially on a suitable substrate, and permitting the subsequent epitaxial growth of a thin high-temperature superconducting film with optimized properties.

Abstract: A zirconia film formed on a substrate and having substantially one or two kinds of particular planes such as (200), (111) or (111) planes only oriented in parallel to the surface of the substrate, and a process for preparing it. This zirconia film is dense, and improved in the thermal resistance, thermal insulation properties and corrosion resistance.

Abstract: A body coated with cubic boron nitride comprises: a base material; a first interlayer of nitride or boride with which at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of the base material is mixed, and the composition ratio of the at least one element is decreased towards the surface, the first interlayer being formed on the base material; and/or a second interlayer of nitride or boride with which at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of the base material is mixed at the total mixing amount 0.01 atomic % to 10 atomic %, and shows an absorption peak at the wave number of 950 cm.sup.-1 to 1150 cm.sup.

Abstract: It is disclosed that a Heusler alloy thin film having a structure of a single crystal is prepared by forming a Heusler alloy thin film having a magneto-optical effect and an MgAgAs type crystalline structure on a single crystal substrate, whereby magnetization is easily effected in a low applied magnetic field. This single crystal thin film is suitable as a material of a head for writing magnetically and reading out optically.

Abstract: An optoelectronic signal recording and storage medium including a base layer, a conductive layer, a photoconductive layer and storage layer has a coherent crystal morphology throughout, even though the chemical and electrical properties of its layers are by choice dramatically different. The base layer is preferably made of monocrystalline sapphire grown in a manner as to allow the growth of the other layers directly on a surface of the base layer without the need to grind and polish that surface, thereby minimizing internal defects in the medium. The monocrystalline base layer also allows the acceptance of exeptionally uniformly distributed charges over wide areas of the medium, thereby enabling the medium to locally record and store minutely differing optoelectronic signals on a background of minimal noise, thus facilitating low light level electronic or optical recording and long term storage of signals and minimal energy readout of those stored signals.

Abstract: A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Abstract: Magnetic recording media have been made with a new class of binder resins having the formula ##STR1## wherein the portion of the copolymer having the a subscript comprises 50 to 97 weight percent of the copolymer, the portion of the copolymer having the b subscript comprises 0 to 30 weight percent of the copolymer, the portions of the copolymer having the c and d subscripts combined comprise 0.1 to 20 weight percent of the copolymer, while d can be 0,R.sub.1 is an alkyl group selected from --CH.sub.3 and --(CH.sub.2).sub.nl CH.sub.3 wherein nl=1-10,R.sub.2 is an alkylene group which may be (CH.sub.2).sub.n1 or (CH.sub.2).sub.n2 (CH)(CH.sub.2).sub.n3 CH.sub.3, n2=1-4 and n3=0-4,R.sub.3 may be selected from --H and --CH.sub.3, n5=0 or 1, and X is a linking group which is stable under electron beam irradiation and may be, for example, ##STR2## R.sub.4 =C1-6 alkylene, for example, with the proviso that when d=0, there is at least one additional polymer in the binder.

Abstract: A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semiconductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications.

Abstract: Method of forming alternating narrow strips of conductive metal silicide, specifically cobalt disilicide, and silicon on a substrate as of silicon with a silicon dioxide or silicon nitride surface layer. Cobalt and silicon are deposited on the substrate in the mole ratio of the eutectic composition of cobalt disilicide and silicon. A molten zone is caused to traverse these materials which upon resolidification at the trailing edge of the molten zone segregate into the two eutectic phases forming alternating narrow strata or lamellae of cobalt disilicide and silicon.

Abstract: Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting the reaction. The reaction can be initiated in a furnace, provided the gaseous ambient is controlled, or can be initiated in air if the mixture is heated sufficiently rapidly, e.g. by heating with electromagnetic energy at microwave frequencies. The dopant source produced includes a fused, amorphous matrix of silicon-oxygen-dopant atoms containing inclusions of elemental dopant and, preferably, inclusions of elemental silicon. Embodiments of sources prepared from antimony trioxide slowly evolve antimony, have a long life and repeatedly and predictably dope silicon at commerically useful levels.

Abstract: A cubic boron nitride coated material comprises a substrate, an outer layer consisting essentially of cubic boron nitride and formed on a surface of the substrate, and at least one intermediate layer interposed between the substrate and outer layer, the intermediate layer comprising at least one nitrogen-containing compound selected from the nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof. Such a coated material can be produced by a method that comprises:providing, on the surface of a substrate, at least one intermediate layer comprised of at least one nitrogen-containing compound selected from the group consisting of nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof; andcausing the outer cubic boron nitride layer to undergo oriented growth on a face of the layer of the at least one nitrogen-containing compound, the face being densely packed with nitrogen atoms.

Abstract: A magneto-optical element comprises a magnetic garnet layer on a crystalline substrate. The garnet layer has a faceted structure, which provides high Faraday rotation and controlled coercivity. The faceted structure is preferably formed by depositing the layer onto a substrate whose lattice constant is sufficiently smaller than that of the layer. The resulting elements find application in light modulators, such as switches and displays, where they permit high resolution without having to be cut into an array of small cells.

Abstract: An anti-reflection coating for an infrared transmitting material, which is stable to water or moisture and free from deterioration of the performances for a long period of time, can be provided. This anti-reflection coating comprises an inner layer of an alkali metal halide and an outer layer, provided thereon, of an infrared transmitting material, the inner layer and outer layer being provided on a substrate of an infrared transmitting material and having refractive indexes in the range of shaded portion in FIG. 2, said refractive indexes of the inner and outer layer being based upon the refractive index n of the infrared transmitting substrate.

Abstract: An intentional lattice mismatch, .DELTA.a/a where .DELTA.a is a difference in the lattice constant of a constant-composition layer and an epitaxial layer and a is the lattice constant of the constant-composition layer, is introduced into the epitaxial layer of a crystal structure having a graded composition layer sandwiched between a single crystal bulk substrate and the constant composition layer so as to alleviate strain resulting from a lattice constant variation in the graded substrate.

Abstract: The invention relates to a magnetic material containing either one or more rare earth elements, chosen from among lutetium, thulium and ytterbium, or yttrium. It also relates to a magnetic film with a high Faraday rotation constituted by a substrate coated with an epitactic layer of a magnetic material of the aforementioned type.The process for the production of such a magnetic film involves the deposition of a garnet film by liquid phase epitaxy on a substrate, use being made of an epitaxy bath containing gadolinium oxide, praseodymium oxide, and at least one oxide of a metal M, bismuth oxide, iron oxide, gallium oxide and/or aluminium oxide and a solvent incorporating lead oxide and boron oxide.

Abstract: A polishing compound is disclosed which is relatively high purity silicon nitride, the silicon nitride comprising particles having equiaxial crystals, the particle size being from about 0.03 to about 5 microns.

Abstract: An composite semiconductor device and a method of making is described. The device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body and a layer of thin film material covering at least a portion of the first surface. A depression formed in the first surface of the body with the layer of thin film material defines one or more members which have a predetermined configuration bridging the depression. First and second openings in the thin film layer flank each member such that an anisotropic etch placed on the openings undercuts the member to form the depression in a manner which substantially prevents undercutting of the semiconductor body below the thin film material at the boundaries of the predetermined configuration.

Abstract: An antireflective film (7, 8) for photoelectric devices comprises at least a layer having a refractive index being the largest on the side abutting on the light receiving surface (2a) or the light emitting surface of a photoelectric device and continuously decreasing according to the distance outward from said side.

Abstract: Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimeters per second per oersted, and magnetic domain diameter is less than 3 micrometers. A specified operational temperature range may extend from -150 to 150 degrees C.; accordingly, such devices are particularly suitable for operation aboard satellites, e.g., in satellite communications systems.

Abstract: Disclosed is a substitutionally strengthened silicon semiconductor material. A high concentration of germanium atoms is added to a silicon melt to thereby substitutionally displace various silicon atoms throughout the crystalline structure. The germanium atoms, being larger than the silicon atoms, block crystalline dislocations and thus localize such dislocations so that a fault line does not spread throughout the crystalline structure. In heavily boron doped P+ silicon substrates, the larger germanium atoms offset the crystalline shrinkage caused by the boron atoms, thereby equilibrating the silicon crystal size.

Abstract: A heat wave shielding lamination having improved abrasion resistance is composed of a visible light transparent substrate and an overlying composite lamination in which layers of a visible light transparent substance of a low refractive index and layers of a visible light transparent substance of a high refractive index are alternately arranged on each other, with the topmost layer being a low-refractance layer, and interfacial layers of Al.sub.2 O.sub.3 which are much thinner than the high-refractance and low-refractance layers are provided between the high-refractance and low-refractance layers.

Abstract: A single crystal film of a hexagonal ferrite is deposited on a nonmagnetic, single crystal substrate with a film of a second ferrite material interposed between the substrate and the hexagonal ferrite film. In a preferred embodiment, the substrate is of nonmagnetic spinel and the second ferrite material is a spinel ferrite.

Abstract: A garnet film for use in magnetic bubble devices that supports magnetic bubbles with a bubble diameter of 0.4 micron or less. The curie temperature can be made over 240.degree. C., and the garnet film used is suitable for ion implanted devices.

Abstract: Disclosed is a new type of transparent GaAs photo electric layer formed on an optical window made of a GaP single crystal substrate via an Al.sub.x Ga.sub.(1-x) As buffer layer, in which a gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal is formed between the GaP single crystal substrate and the Al.sub.x Ga.sub.(1-x) As buffer layer. The y content in the gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal changes from 1 to 0 as deposition of the gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal goes on while the x content can arbitrarily be selected in the range of 0 to 1.

Abstract: Dielectrically isolated, thin single crystal films of semiconductor material suitable for integrated circuit applications and preparation thereof by solid state zone recrystallization of a polycrystalline layer of the semiconductor material are disclosed.

Abstract: A method of reoxidizing a partially-reduced ceramic. The partially reduced eramic is heated in a chamber having a non-oxidizing atmosphere. An oxidizing gas is then introduced into the chamber at a rate which is sufficiently slow that cracking will not occur.

Abstract: In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memory chip (2) after conductor paterns are formed thereon, it is necessary that the temperature coefficient of the collapse field of the magnetic garnet crystal film (51) be from 0.01 to 0.04%/.degree.C., in terms of an absolute value, greater than the temperature coefficient of the above-mentioned residual magnetization (56). The present invention achieves this by increasing the degree of substitution of Lu ions for Fe ions in the octahedral sites constituting the unit lattice of the magnetic garnet crystal. As a result, an operating temperature range about twice as wide as the conventional operating temperature range is ensured.

Abstract: Improved adherence of oxide wear layers on hard metal or cemented carbide substrates is attained by providing a thin surface-oxidized bonding layer comprising a carbide or oxycarbide of at least one of tantalum, niobium or vanadium, optionally adding aluminum to the bonding layer, and finally providing an outer oxide wear layer.

Abstract: Improved adherence of oxide wear layers on hard metal or cemented carbide substrates is obtained by providing a thin surface-oxidized bonding layer comprising a carbide or oxycarbide of at least one of tantalum, niobium or vanadium, optionally adding aluminum to the bonding layer, and finally providing an outer oxide wear layer.

Abstract: Crystals of silicon carbide and aluminum nitride, substrates containing same, and the fabrication thereof.

Abstract: Magnetic device having a monocrystalline substrate bearing a magnetic layer, said substrate having a composition on the basis of rare earth metal gallium garnet of the general formula ##STR1## wherein A=gadolinium and/or samarium and/or neodym and/or yttriumB=calcium and/or strontiumC=magnesiumD=zirconium and/or tin andO<x.ltoreq.0.7; O<y.ltoreq.0.7 and x+y.ltoreq.0.8.

Abstract: A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately 1150.degree.-1400.degree. C. for time to remove sufficient oxygen from the substrate in order to stabilize the surface; lowering the temperature to below 1075.degree. C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface, by a chemical vapor deposition process.

Abstract: A device for propagating magnetic domains includes a monocrystalline nonmagnetic substrate of a rare earth gallium garnet bearing a layer of an iron garnet capable of supporting local enclosed magnetic domains. The iron garnet layer is grown in compression on a (100) face of the nonmagnetic substrate. The iron garnet comprises manganese in part of the iron sites of its crystal lattice, and comprises yttrium and at least one representative selected from the group comprising bismuth and the rare earth metals in the dodecahedral lattice sites. Such a magnetic garnet has a very high uniaxial anisotropy and a high domain mobility. These properties make the device extremely suitable for propagating submicron magnetic domains having diameters as small as 0.4 .mu.m.

Abstract: A device for propagating magnetic domains, comprising a monocrystalline nonmagnetic substrate of a material having a garnet structure, and a layer of an iron garnet grown epitaxially on the nonmagnetic substrate. In the dodecahedral lattice sites, the iron garnet comprises at least a bismuth ion and a rare-earth ion selected from the group consisting of lutetium, thulium, and ytterbium. Such a magnetic garnet combines very high uniaxial anisotropy with a high domain mobility, which properties make the device extremely suitable for the propagation of magnetic domains having diameters from approximately 1 to approximately 2 .mu.m under the influence of comparatively low driving fields.

Abstract: Certain Tm-containing iron garnet compositions provide layers having desirably low values of temperature coefficient of bubble collapse field and permit the fabrication of 1.2 .mu.m diameter magnetic bubble devices. The compositions, based on Tm-substitution on dodecahedral sites of [(La,Bi),(Sm,Eu),R].sub.3 (Fe,Al,Ga).sub.5 O.sub.12, are grown by liquid phase epitaxy onto suitable substrates. Bubble devices that incorporate the layers find applications in high density information storage.