Abstract: The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. The positive photosensitive resin composition includes a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a dye (C) and a solvent (D). The novolac resin (A) further includes hydroxy-type novolac resin (A-1), which is synthesized by condensing hydroxylbenzaldehyde compound with aromatic hydroxyl compound. The dye (C) includes at least one (C-1) selected from the group consisting of diazo dye, anthraquinone dye and chromium (III, Cr3+) azo dye, as well as triarylmethane dye (C-2). Since the positive photosensitive resin composition can form colorfully fine patterns on metal circuits, and such patterns are not decolored after being etched, thereby beneficially blocking the reflected light of the metal circuits.

Abstract: A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.

Abstract: The present invention is related to a photosensitive resin composition containing: a vinyl-based copolymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group and a carboxyl group-containing vinyl monomer (b); a quinonediazide compound (II) and a compound (III) represented by the following formula (5), and to a photosensitive dry film and a method for forming a patter by using the photosensitive resin composition.

Abstract: A photosensitive resin composition comprising: a vinyl-based polymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group; a vinyl-based polymer (II) obtained by polymerizing a monomer mixture containing a carboxyl group-containing vinyl monomer (b), and having a weight average molecular weight of 20,000 to 100,000, provided that the vinyl-based polymer (I) is excluded; a quinonediazide compound (III); and a compound (IV) represented by following formula (5). [In the formula, Y is a hydrocarbon group of 1 to 6 carbon atoms; l and m are each independently an integer of 1 to 3; n is 1 or 2; p and q are each independently 0 or 1.].

Abstract: Embodiments in accordance with the present invention provide for norbornane-type ballast materials, norbornane-type photoactive compounds derived from such ballast materials and alkali-soluble positive-tone polymer compositions that encompass such norbornane-type photoactive compounds and one of a PBO or PNB resin.

Abstract: A positive photosensitive resin composition according to one embodiment of the present invention includes a polyamic acid or a polyamic acid ester compound including a repeating unit represented by Formula 1 defined in this specification, a photosensitive diazoquinone compound, a silane compound, a phenol compound, and a solvent. The positive photosensitive resin composition can be cured at a low temperature of 260° C. or less, and can have high sensitivity, resolution, residue removal, substrate adherence, and pattern-forming capabilities, and low film shrinkage.

Abstract: The present invention relates to a radiation sensitive resin composition comprising [A] an alkali-soluble resin, [B] a 1,2-quinonediazide compound and [C] a radical trapping agent. The radiation sensitive resin composition can provide an interlayer insulating film which satisfies general requirements for an interlayer insulating film such as high light transmittance and has excellent heat-resistant dimensional stability, heat discoloration resistance and adhesion to a substrate along with the improvement of process efficiency for improving product yield at a high resolution and has excellent storage stability.

Abstract: The present invention provides novel diazonaphthoquinonesulfonic acid bisphenol derivatives. More particularly, the present invention relates to photo restive coating comprising alkali-soluble resin, a photoactive compound and a surfactant. The photoresist film prepared has less then one micron. The photoactive compound is soluble or swellable in aqueous alkaline solutions and is diazonaphthoquinonesulfonic bisphenol esters of the general formula (A), wherein DNQ represents a 2-Diazo-1-naphthoquinone-4-sulfonyl, 2-Diazo-1-naphthoquinone-5-sulfonyl, 1-Diazo-2-naphthoquinone-4-sulfonyl groups and R1 R1 represents an alkyl, aryl and substituted aryl groups. The invention also provides a process for coating and imaging the light-sensitive composition.

Abstract: Embodiments in accordance with the present invention provide for norbornane-type ballast materials, norbornane-type photoactive compounds derived from such ballast materials and alkali-soluble positive-tone polymer compositions that encompass such norbornane-type photoactive compounds and one of a PBO or PNB resin.

Abstract: A positive photosensitive resin composition includes (A) a polybenzoxazole precursor resin, (B) a photosensitive diazoquinone compound, (C) a hindered phenol antioxidant shown by the following general formula (1), and (D) a phenol compound shown by the following general formula (2). Formula (1) is: wherein R1 represents a hydrogen atom or an organic group having 1 to 4 carbon atoms, a is an integer from 1 to 3, and b is an integer from 1 to 3. Formula (2) is: wherein R2 represents a methylene group or a single bond, c is an integer from 1 to 3, and d is an integer from 1 to 3. A protective film, an interlayer insulating film, and a semiconductor device and a display element using the same are also disclosed.

Abstract: A method of fabricating a thin film pattern improve the life of a blanket and reduce the cost and improve reliability in forming the thin film pattern. The method includes injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a printing solvent that satisfies the condition 6>?solvent or ?solvent>11, where ?solvent is the solubility parameter of the solvent, or satisfies the condition 6<?solvent<11 and ?<2(D), where ? is the dipole moment of the solvent; rotating the printing roller to uniformly coat the etch resist solution on the blanket; rolling the printing roller coated with the etch resist solution onto a printing plate to pattern the etch resist solution to thereby form an etch resist pattern; transferring the etch resist pattern from the printing roller to a substrate; hardening the etch resist pattern; and forming a desired thin film pattern on the substrate using the etch resist pattern.

Abstract: The present invention provides a positive photosensitive composition containing a specific tetrafunctional silsesquioxane compound (A), a siloxane polymer (B) formed of multiple kinds of alkoxysilane compounds having different numbers of alkoxyl groups, a 1,2-quinone diazide compound (C), and a solvent (D) in order to provide a positive photosensitive composition useful for forming a film on which a pattern is formed, the film being excellent in high thermal resistance, high transparency, crack resistance, adhesiveness with a ground, and the like, and being obtained by performing development with an alkali aqueous solution.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound; and (E) a solvent. In the above Chemical Formula 1, each substituent is the same as defined in the specification.

Abstract: A positive lift-off resist composition is provided comprising (A) an alkali-soluble novolac resin, (B) a quinonediazidosulfonate photosensitive agent, (C) an alkali-soluble cellulose resin, and (D) an aromatic hydroxy compound having a formula weight of 180-800. The composition has shelf stability, high sensitivity, and a film retention after development of at least 95% and is used to form a lift-off resist pattern of fully undercut profile.

Abstract: The present invention provides a positive-type radiation-sensitive composition containing (A) a siloxane polymer, and (B) a quinone diazide compound, in which the content of aryl groups relative to Si atoms in the siloxane polymer (A) is greater than 60% by mole and no greater than 95% by mole.

Abstract: A photosensitive insulating resin composition includes (A) an alkali-soluble resin that contains (a1) a structural unit derived from a crosslinkable monomer and (a2) a structural unit having a phenolic hydroxyl group, (B) a crosslinking agent, (C) a photosensitive compound, and (D) a solvent.

Abstract: Disclosed is a positive photosensitive resin composition that includes: (A) a polybenzoxazole precursor including a repeating unit represented by the Chemical Formula 1, a repeating unit represented by the Chemical Formula 2, or a combination thereof, and a thermally polymerizable functional group at least one terminal end of the polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound including a cross-linking functional group; and (E) a solvent.

Abstract: The positive photosensitive resin composition of the present invention has a polyamide resin and a photosensitive agent, wherein the polyamide resin has a specific structure. The cured film of the present invention has a cured product of the positive photosensitive resin composition. The protecting film and insulating film of the present invention has the cured film each. The semiconductor device and display device of the present invention has the cured film each.

Abstract: Disclosed are a photosensitive compound and a method of manufacturing the same. The photosensitive is composed of a naphthoquinonediazide sulfonic ester compound having at least one naphthoquinonediazide sulfoxy group, and having either at least one carboxy group with 1 to 8 carbon atoms or at least one alkoxy group with 1 to 8 carbon atoms, in one molecule.

Abstract: Disclosed is a photosensitive resin composition, comprising 0.1 to 20 parts by weight of a polygonal oligomeric silsesquioxane derivative, and 5 to 30 parts by weight of a compound generating acid by light, based on 100 parts by weight of a polyamide derivative.

Abstract: A positive-type photosensitive resin composition includes (A) a polyamide resin that includes a structural unit shown by the following formula (1) and a structural unit shown by the following formula (2), and (B) a photosensitive compound, the polyamide resin (A) having a weight average molecular weight (Mw) of 5000 to 80,000, and a cured film obtained by curing the positive-type photosensitive resin composition at 250° C. having a tensile modulus of elasticity of 2.0 to 4.0 GPa and a tensile elongation of 10 to 100%. According to the present invention, a positive-type photosensitive resin composition that can be cured at a low temperature and a highly reliable semiconductor device including a cured film of the positive-type photosensitive resin composition can be provided.

Abstract: A positive-type photosensitive composition including an alkali-soluble polymer formed through copolymerization of monomer (A) represented by the following General Formula (I) and other radical polymerizable monomer (B), a 1,2-quinonediazide compound, and a nanowire structure: where R1 represents a hydrogen atom or a methyl group, R2 represents a hydrogen atom or a C1 to C5 alkyl group, n is an integer of 1 to 5, and m is an integer of 1 to 7.

Abstract: A method of manufacturing an inkjet printhead, in which a solvent included in a positive photoresist composition or in a non-photosensitive soluble polymer composition which is used to form a sacrificial layer has a different polarity from that of a solvent included in a negative photoresist composition that is used to form at least one of a channel forming layer and a nozzle layer.

Abstract: Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.

Abstract: An array for a display device is formed by adhering a positive dry film resist, which has a positive photoresist resin layer over a supporting film, to a substrate such that the photoresist resin layer adheres on a surface of the substrate. The supporting film is then released from the photoresist resin layer adhered to the surface of the substrate, the layer is exposed to light; and the positive type photoresist layer is developed to remove exposed regions.

Abstract: Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) a first polybenzoxazole precursor that includes: a repeating unit of Chemical Formula 1 and a thermally polymerizable functional group at at least one terminal end; (B) a second polybenzoxazole precursor that includes a repeating unit of Chemical Formula 3; (C) a photosensitive diazoquinone compound; (D) a silane compound; and (E) a solvent.

Abstract: A positive-type photosensitive resin composition, including: (a) a novolac resin; (b) a polymer including, as a main component, a structure represented by formula (1) and/or formula (2): ?(wherein R1 and R2 may be the same or different and each represent an organic group having at least two carbon atoms and a valence of 2 to 8, R3 and R4 may be the same or different and each represent hydrogen or a monovalent organic group of 1 to 20 carbon atoms, —NH—R5 in formula (1) and —CO—R6 in formula (2) each represent a polymer end group, R5 and R6 each represent a monovalent organic group having 2 to 30 carbon atoms which includes an unsaturated hydrocarbon group, n is in the range of 10 to 100,000, l and m each represent an integer of 0 to 2, and p and q each represent an integer of 0 to 4, provided that p+q>0; (c) a quinone diazide compound; (d) an alkoxymethyl group-containing compound; and (e) a solvent.

Abstract: A positive-type photosensitive resin composition for electronic materials having good film adhesiveness and sensitivity without causing a corrosion reaction to copper and copper alloys in metal wirings, a method for producing patterns and electronic parts are provided. The positive-type photosensitive resin composition includes (A) a polybenzoxazole precursor having a structure represented by the following general formula (I): wherein X represents a bivalent organic group, Y represents a tetravalent organic group, R1 represents a hydrogen atom or a monovalent organic group, and m represents an integer of 2 to 500 which represents a repeating unit number of the polymer, (B) a solvent, (C) a tetrazole derivative and (D) a compound which generates an acid by light.

Abstract: Disclosed is a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a diazoquinone compound, (d1) an activated silicon compound and (d2) an aluminum complex. Also disclosed is a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a diazoquinone compound, (C) a compound having two or more oxetanyl groups in one molecule and (D) a catalyst for accelerating the ring-opening reaction of the oxetanyl groups of the compound (C).

Abstract: A photosensitive resin composition comprising (a) a compound obtained by reacting a polybasic acid anhydride with the phenolic hydroxyl groups of a novolac-type phenol resin, and (b) a 1,2-quinonediazide compound. The photosensitive resin composition, which comprises component (b) composed of a 1,2-quinonediazide compound in combination with a component (a) obtained by reacting a polybasic acid anhydride with the phenolic hydroxyl groups of a novolac-type phenol resin, exhibits sufficiently high photosensitivity, image contrast, resolution and adhesiveness.

Abstract: A compound of the formula (I) where the symbols and indices are each defined as follows: A is A?, R or O—R; where R is a straight-chain, branched or cyclic, saturated or unsaturated aliphatic radical having 1-8 carbon atoms; A? is the same or different and is B is a bond, —O—C(O)—, —C(O)—O—, —O—C(O)—, —C(O)—NH—, —NH—C(O)—, —C(O)—O—CH2—CH(OH)—CH2—O, —O—CH2—CH(OH)—CH2—O—(O)C—, —O—C(O)—O—, —O—C(O)—NH— or —NH—C(O)—O—; R1 is H or OH; m is 1, 2, 3, 4 or 5; Y is n is a positive rational number ?3; E is the same or different and is —CH—CHR2—, —CHR2—CH2—, —CH2—CHR2—O—, —O—CHR2—CH2—, —(CH2)r—O— or —O—(CH2)—; R2 is H or CH3 and r is 1 or 4, is suitable as a light-sensitive component for photoresists.

Abstract: A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. The acryl resin makes up about 1% to about 15% of the total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

Abstract: A heat resistant photosensitive resin composition having excellent film properties is provided by constituting a photosensitive resin composition containing (A) a polymer having an acid functional group and/or a substituent derived therefrom, (B) a compound having at least one substituent derived from an amine functional group, (C) a photoreactive compound, and (D) a solvent. Using this composition, a pattern with high resolution can be produced, and thus an electronic part having a high quality can be produced.

Abstract: A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

Abstract: A positive resist composition for a thin-film implantation process of the present invention includes: a resin component (A) with an acid-dissociable dissolution inhibiting group, whose alkali solubility increases by the action of an acid; an acid generator component (B) which generates an acid by irradiation with radiation; and a compound (C) having a radiation absorbing ability, wherein said resin component (A) comprises a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) obtained by substituting the hydrogen atom in a hydroxyl group of said structural unit (a1) with an acid-dissociable dissolution inhibiting group, and said acid-dissociable dissolution inhibiting group contains an acid-dissociable dissolution inhibiting group (II) represented by the following general formula (II) as a main component.

Abstract: Disclosed herein is a photoresist composition suitable for coating onto a large substrate and having improved coating uniformity to prevent occurrence of stains, a coating method thereof, a method of forming an organic film pattern using the same, and a display device fabricated thereby. The present invention thus provides a photoresist composition comprising a polymeric resin with an incorporated polysiloxane resin, a photosensitive compound, and an organic solvent. Accordingly, the photoresist composition can be coated onto a large substrate by a spinless coating method, and thereby coating uniformity can be improved, the occurrence of stains such as cumulous stains and resin streaks can be prevented, and the coating rate and quality of a final product prepared using the photoresist composition can also thereby be enhanced.

Abstract: A positive photosensitive resin composition with favorable heat resistance and transparency is provided. The photosensitive resin composition contains a resin component (A1) having a structural unit (a1?) obtained by substituting at least a portion of hydrogen atoms of phenolic hydroxyl groups within a structural unit represented by a general formula (a1) shown below with a naphthoquinone-1,2-diazide-5-(and/or -4-) sulfonyl group. (In the above general formula, R0 represents a hydrogen atom or methyl group, R1 represents a single bond or an alkylene group of 1 to 5 carbon atoms, R2 represents an alkyl group of 1 to 5 carbon atoms, a represents an integer from 1 to 5, b represents either 0 or an integer from 1 to 4, and a+b is no greater than 5. If two or more R2 groups exist, then these R2 groups may be either the same or mutually different.

Abstract: There is provided a photosensitive composition including a polyimide or polyimide precursor. The polyimide and polyimide precursor of the present invention includes a group of a first acid-cleavable group, a first base-cleavable group or a first thermally-cleavable group, and another group of a hydrophilic group, or a protected hydrophilic group by a second acid-cleavable group, a second base-cleavable group, or a crosslinkable group.

Abstract: The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices.

Abstract: A heat resistant positive-working photosensitive PBO precursor composition comprising: (a) at least one polybenzoxazole precursor polymer; (a) at least one plasticizer compound; (b) at least one solvent; wherein the amount of the plasticizer present in the composition is an amount effective to reduce the sidewall angle of imaged and cured features in the coated film on the substrate to prevent stress failures in subsequent metallization of the substrate due to steep angles of the imaged features, and with the proviso that if the polybenzoxazole precursor polymer solely consists of polybenzoxazole precursor polymers that do not contain a photoactive moiety on the polymer, then (c) at least one photoactive compound is also present in the composition.

Abstract: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

Abstract: A positive type photoresist resin film includes a support film and a thermosetting positive type photoresist resin layer laminated over the support film. The positive type photoresist resin layer contains alkali soluble resin, a diazide based photosensitive compound and a sensitivity enhancer. The support film has a surface roughness that inhibits the formation of defect structures such as fish eye. The invention overcomes process inefficiencies and defects cause by spin coating photoresist technologies.

Abstract: A positive-type photosensitive resin composition comprises (A) an alkali-soluble resin having at least a polybenzoxazole precursor structure, (B) a sensitizer, and (C) a cyclic compound having an alcoholic hydroxyl group. A protecting layer and an insulating layer include a cured layer which is a cured product of the positive-type photosensitive resin composition. A semiconductor device and a display device include the cured layer. According to the present invention, a highly reliable positive-type photosensitive resin composition can be obtained even when cured at a low temperature.

Abstract: A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.

Abstract: A positive type photoresist resin film contains a support film and a positive photoresist resin layer laminated over the support film. The peak height (Rp) of the support film is less than about 300 nm to eliminate fish eye defects. The positive photoresist resin layer may contain alkali soluble resin, a diazide based photosensitive compound, a plasticizer and, optionally, a sensitivity enhancer and a releasing agent.

Abstract: A positive photosensitive resin composition exhibiting excellent heat resistance is provided, which comprises an alkali-soluble resin component (A) and a photosensitizer (B), the component (A) including a resin component (A1) having a structural unit (a1) represented by general formula (a1) shown below: wherein R0 represents a hydrogen atom or a methyl group; R1 represents a single bond or an alkylene group of 1 to 5 carbon atoms; R2 represents an alkyl group of 1 to 5 carbon atoms; and a represents an integer of 1 to 5, and b represents 0 or an integer of 1 to 4, with the proviso that the sum of a and b is 5 or less, and when two or more R2 are present, R2 may be the same or different.

Abstract: Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

Abstract: A positive type photosensitive image-forming material for use with an infrared laser is provided. The material includes a substrate, a layer (A) containing not less than 50% by weight of a copolymer which contains, as a copolymerization component, not less than 10% by mol of at least one of the following monomers (a-1) to (a-3), wherein (a-1) is a monomer having in the molecule a sulfonamide group wherein at least one hydrogen atom is linked to a nitrogen atom, (a-2) is a monomer having in the molecule an active imino group represented by the following general formula (I): and (a-3) is a monomer selected from acrylamide, methacrylamide, acrylate, methacrylate and hydroxystyrene, which respectively have a phenolic hydroxyl group; and a layer (B) containing not less than 50% by weight of an aqueous alkali solution-soluble resin having a phenolic hydroxyl group. The layer (A) and the layer (B) are laminated on the substrate in that order.