Abstract: The present invention provides a photoresist composition and more particularly, a photoresist composition comprising a) a novolak resin, b) a diazide compound, and c) a solvent containing propylene glycol methyl ether acetate (PGMEA) and 2,2,4-triemthyl-1,3-penthanediolmonoisobutylate (TMPMB). The photoresist composition according to the invention has excellent coating uniformity and stain inhibitory properties after coating so that it can be easily applied to real industrial fields and it can improve working environments due to the reduction of amounts to be consumed, the decrease of time to be required for manufacture, etc. when manufactured on a large scale.

Abstract: A polyimide precursor in accordance with the present invention contains amide acid ester units, either imide units or amide acid units, and fluorine atoms bonded to some of these structural units. A polyimide precursor resin composition in accordance with the present invention contains either such a polyimide precursor or resins separately containing the structural units. Polyimide precursors in accordance with the present invention and resin compositions based on the same therefore have excellent properties and are suitably used in particular to form a particular pattern and for other purposes by impart photosensitivity to them.

Abstract: A positive resist composition comprising a mixture of an alkali-soluble novolak resin prepared using m-cresol, p-cresol and 2,5-xylenol as starting reactants and a phenolic compound, wherein the hydrogen atoms of all hydroxyl groups are substituted in a proportion of 0.03–0.05 mol per hydrogen atom with 1,2-naphthoquinonediazidosulfonyl ester groups, has uniformity, high sensitivity and high resolution, and is improved in heat resistance, film retention, substrate adhesion, and storage stability.

Abstract: The present invention relates to a photoresist composition having high heat resistance used in the production process of an LCD, and more particularly, to a photoresist composition having high heat resistance, capable of decreasing process tact (a way), of process simplification, and of the retrenchment of expenditures. The inventive composition facilitates this through making it possible to skip 5 processes, such as Cr metal deposition forming a metal film, and the photo/etch/PR strip/etch steps of the whole surface of the metal, by substituting the inventive composition for the usual metal film, such that N+ ion doping in production of TFT-LCD can take place due its high heat resistance.

Abstract: A positive photoresist composition comprising an alkali-soluble novolak resin (A) containing a structural unit (a1) represented by a general formula (I) shown below, and a structural unit (a2) represented by a general formula (II) shown below, and a photosensitizer (B)

Abstract: The photosensitive resin composition comprising: (A) a resin containing (A1) a repeating unit having at least two groups represented by the specific general formula; and (B) a compound capable of generating an acid by the action with one of an actinic ray and a radiation.

Abstract: New photosensitive PBO precursor polymers which contain diazoquinone moieties attached to its backbone and in which all amino end groups are converted into amide groups. The photosensitive formulation based on the disclosed PBO precursor polymers have good imaging and mechanical properties as well as superior shelf life stability. Photosensitive polybenzoxazole precursor polymers having (sulfon)amide end groups (with or without attached diazoquinone groups) can be formulated into photosensitive compositions with diazoquinone photoactive compounds which lack benzylic hydrogens on the backbone to yield compositions producing films significantly lighter in color after curing.

Abstract: The present invention relates to a photosensitive resin composition for use as a photoresist, and more particularly, to a photosensitive resin composition for a photoresist comprising an acrylate copolymer obtained by selectively using specific compounds or controlling the ratio of unreacted monomers, and a 1,2-quinonediazide compound, which is excellent in several performance factors such as dielectric characteristics, flatness, transparency, developing performance, residual film rate, chemical resistance, and heat resistance, as well as sensitivity and resolution, and in particular it facilitates easy pattern formation into interlayer dielectrics, and it can be used as a photoresist in an LCD manufacturing process due to its excellent transmissivity even when prepared as a thick film.

Abstract: Novel compositions comprising photoactive polymers comprising a dinitrobenzyl group in conjunction with a photoacid generator are disclosed. In one embodiment, the photoacid generator is a diazide and/or a sulfonyl aceto carbonyl compound. The photoacid generators are typically used in amounts of 10 weight percent or less. The compositions find particular application in storage stable, pH stable, and water stable positive photoresist compositions. Such compositions demonstrate reduced process time as compared with similar compositions lacking the photoacid generator. Methods for using these compositions are also disclosed.

Abstract: The present invention relates a method for high aspect ratio pattern transfer, by using combination of imprint and Step and Flash techniques to transfer high aspect ratio pattern. The present invention simultaneously saves the developing time and the amount of developer used during the photo-resist pattern transfer process. The present invention is able to avoid separation and dissolution between pattern and substrate that is attacked by developer, and is able to yield high aspect ratio patterns.

Abstract: There is provided a method of producing a resist composition which yields a resist composition with good storage stability, and no fluctuation in characteristics between production lots. There are provided: a novolak resin solution formed by adding benzoquinone to a novolak resin solution produced by dissolving a novolak resin in an organic solvent; a positive photoresist composition comprising the novolak resin solution and a photosensitive component; a positive photoresist composition comprising the novolak resin solution, a photosensitive component, and hydroquinone; and a method of producing a positive photoresist composition involving mixing the novolak resin solution described above and a photosensitive component.

Abstract: A positive photosensitive resin composition of at least one uncapped polybenzoxazole precursor polymer, at least one capped polybenzoxazole precursor polymer, at least one photosensitive agent and at least one solvent, use of such compositions to pattern an image on a substrate and the resulting relied patterned substrates and electronic parts therefrom.

Abstract: The invention provides a positive photosensitive resin composition which is free from film reduction, swelling or peeling at the time of development with an aqueous alkaline solution and which provides a dimensionally stable patterns after curing, and of which the final cured film has a low water absorption and excellent alkaline resistance. A positive photosensitive polyimide resin composition characterized by comprising an organic solvent-soluble polyimide having repeating units represented by the formula (1): (wherein m is an integer of from 3 to 10,000, R1 is a tetravalent organic group, R2 is a bivalent organic group, provided that from 5 to 100 mol % of R2 is a bivalent organic group having fluorine), a polyamic acid and a compound capable of generating an acid by irradiation with light.

Abstract: A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract: A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.

Abstract: A photoresist composition comprising (A) a resin soluble in an alkali, (B) an ester of a quinonediazidesulfonic acid, (C) a thermosetting component and an organic solvent; an insulation film for organic EL devices which is formed by heating a resist film formed with the composition on a substrate in accordance with photolithography, has a sectional shape having upper edge portions having a round shape and the width increasing towards the bottom portion and has a thickness is in the range of 0.3 to 3 ?m; and a process for producing the insulation film using the photoresist composition. The photoresist composition, the insulation film for organic EL devices and the process for producing the insulation film provide an insulation film having a sectional shape advantageous for an insulation film for organic EL devices since the width in the sectional shape of the film increases towards the bottom portion.

Abstract: The present invention provides a positive photosensitive resin composition which can be developed with a tetramethylammonium hydroxide aqueous solution with a usual concentration, has high sensitivity and excellent resolution, and is excellent in heat resistance, planarization properties, transparency, low water absorption or the like. Further, the present invention provides a method for arbitrarily forming a pattern having a semicircular or trapezoidal section by using the composition. The positive photosensitive resin composition of the present invention comprises an alkali-soluble resin, a 1,2-quinone diazide compound, a crosslinking compound having at least two epoxy groups and a surfactant, and the alkali-soluble resin is a copolymer comprising a carboxylic group-containing acrylic monomer, a hydroxyl group-containing acrylic monomer and an N-substituted maleimide as essential components.

Abstract: The invention provides a radiation-sensitive resin composition, by which a patterned insulation film whose water repellency varies is easily formed with high precision, a process for forming a patterned insulation film using this composition, a display element and an flat-panel disply device using the composition, and a process for producing the flat-panel disply device. The resin composition comprises (A) an alkali-soluble copolymer, (B) a 1,2-quinonediazide compound and (C) a water-repellent siloxane resin in particular proportions. In the production process of the patterned insulation film, patterning exposure and development are conducted on a coating formed of the resin composition. The display element and flat-panel disply device are equipped with an interlayer insulation film formed by the resin composition.

Abstract: A composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of a compound represented by the following formula: and (C) a compound represented by the following formula: This composition is a positive photoresist composition that is excellent in sensitivity and definition and causes less shrink.

Abstract: A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected by 13C-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 ?m and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.

Abstract: A positive photosensitive resin composition of at least one uncapped polybenzoxazole precursor polymer, at least one capped polybenzoxazole precursor polymer, at least one photosensitive agent and at least one solvent, use of such compositions to pattern an image on a substrate and the resulting relied patterned substrates and electronic parts therefrom.

Abstract: A positive photosensitive resin precursor composition which can be can be developed in an alkaline developer is provided. The positive photosensitive resin precursor composition comprises (a), one of (b1) and (b2), and (c): (a) a polyamic acid ester and/or a polyamic acid polymer, both of which are soluble in an alkaline aqueous solution; (b1) a phenolic-hydroxyl-group-containing thermally crosslinkable compound comprising an organic-group-R1-substituted methylol group represented by formula (1) (wherein R1 is not a hydrogen atom), CH2—OR1)??(1); (b2) a thermally crosslinkable compound containing a ureal organic group substituted by an organic group R1 and represented by formula (2) (c) an esterified quinone diazide compound.

Abstract: A method of forming a minute resist pattern wherein a positive-working photoresist composition containing 3 to 15 parts by weight of a quinone diazide group-containing photosensitizer relative to 100 parts by weight of alkali-soluble novolak resin is developed by an aqueous organic or inorganic alkali solution having a lower alkali concentration than that of the conventional one as the developer. The preferable example of the organic alkali materials in the developer is quaternary ammonium hydroxide, and the preferable example of the inorganic alkali materials in the developer is alkali metal hydroxide. The concentrations of the quaternary ammonium hydroxide and the alkali metal hydroxide in the developing solution are 2.2% by weight or less and 0.4% by weight or less respectively. Using such developing solution, high sensitivity, a high film retention rate, high resolution, low process dependency of dimension accuracy, and a formation of excellent pattern profile can be achieved.

Abstract: Disclosed is a positive-type photosensitive resin composition comprising: (a) an alkali-soluble resin; (b) a quinone diazide compound; (c) a heatsensitive compound which colors upon being heated and which shows an absorption maximum at a wavelength of not less than 350 nm and not more than 700 nm; and (d) a compound which does not have an absorption maximum at a wavelength of not less than 350 nm to less than 500 nm, and has an absorption maximum at a wavelength of not less than 500 nm and not more than 750 nm. The composition is preferably used for forming light-blocking separators or black matrices of organic electroluminescent devices and liquid crystal display elements.

Abstract: The present invention describes encapsulated inorganic resists which are compatible with conventional resist processing and development. The encapsulated inorganic materials increase the plasma etch selectivity of the resists compared to conventional polymeric resists. In effect, these resist systems can act as photoimagable single layer hard mask. In a preferred embodiment, the encapsulated material includes inorganic core particles that are at least partially coated with a moiety having an acid labile or photo-labile protected acidic group such that, upon deprotection, the encapsulated material exhibits greater base solubility.

Abstract: Disclosed is a photoresist composition comprising: a) at least one film forming resin selected from the group consisting of novolak resins, and polyhydroxystyrenes; b) at least one photoactive compound or photoacid generator; and c) a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals. Also disclosed is a photoresist composition comprising a polycarbonate resin and a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals. Also disclosed is a process for imaging a photoresist composition, comprising the steps of: a) coating a suitable substrate with any of the aforementioned photoresist compositions; b) baking the substrate to substantially remove the solvent; c) imagewise irradiating the photoresist film; and d) removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.

Abstract: A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.

Abstract: The present invention provides a positve photosensitive resin composition of high sensitivity which can form a pattern of high resolution and high residual film ration and which can give a cured film superior in mechanical properties, adhesivity and water absorptivity. That is, the present invention lies in a positive photosensitve resin compostion comprising 100 parts by weight of an alkali-soluble resin, 1 to 100 parts by weight of a photosensitve diazoquinone compound (B) and a filler (C), characterized in that content F of the filler (C) represented by the following formula is 2 to 70% by weight.

Abstract: The present invention relates to a composition and a process for preparing a composition that comprises: 1) a film-forming novolak resin wherein the hydrogen atom of a hydroxyl group in the novolak resin is substituted with a naphthoquinonediazidosulfonyl (DNQ) group in a proportion of less than 3.0 mol % per hydrogen atom to form a partially esterified novolak resin; 2) at least one photosensitive component present in an amount sufficient to photosensitive the photoresist composition; and 3) at least one solvent.

Abstract: Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.

Abstract: A photosensitive resin precursor composition exhibiting an excellent film thickness uniformity contains: a heat resistant resin precursor polymer; a radiation sensitive compound; and a solvent expressed by formula (1): R1 represents an alkyl group having a carbon number in the range of 1 to 3. R2, R3, R4, and R5 each represent hydrogen or an alkyl group having a carbon number in the range of 1 to 3, and l represents an integer in the range of 0 to 3.

Abstract: A positive photoresist composition includes (A) an alkali-soluble novolak resin containing 1,2-naphthoquinonediazidosulfonyl groups substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) an ester of, for example, a compound represented by the following formula with a naphthoquinonediazidosulfonyl compound, and (C) a sensitizer:

Abstract: The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.

Abstract: The present invention provides methods of forming and using thermally imageable composite elements which may be developed into lithographic printing plates. More specifically, the present invention provides a method of forming thermally imageable composite elements which provide substantial developer resistance in desired regions, while maintaining white light desensitivity and durability.

Abstract: There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist ? (?m?1) for the exposure light is such that 0.5???7.

Abstract: A positive planographic printing plate precursor comprising a recording layer containing a water-insoluble and alkali-soluble resin, an infrared absorbent and an organic quaternary ammonium salt. A positive planographic printing plate precursor comprising at least two recording layers containing the resin and the infrared absorbent with a coating amount of an upper positive recording layer being in the range of 0.05 to 0.45 g/m2.

Abstract: Disclosed is planographic printing plate precursor comprising a support having disposed thereon an image forming layer containing a fluorine macromolecular compound having a structural unit derived from a monomer represented by the following general formula (I). In the general formula (I), R0 represents a hydrogen atom, a methyl group, a cyano group or a halogen atom. X represents a single bond or a divalent connecting group. R1 to R6 each independently represent a hydrogen atom, an alkyl group, a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom. Further, at least one of R1 to R6 represents a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom.

Abstract: Photosensitive compositions comprising a phenol resin having a urea bond in the main chain, planographic printing plate precursors containing the photosensitive compositions, and methods for preparing planographic printing plates using the planographic printing plate precursors are disclosed. Planographic printing plates that exhibit good durability, good exposure visual image property, and good solvent resistance; particularly superior resistance to washing oil used in UV ink printing; and superior baking property are produced.

Abstract: A positive resist composition, having a superior resolution as well as good resist performances such as sensitivity, depth of focus and profile, is described and includes a novolac resin, a radiation-sensitive quinonediazide compound and a thioxanthone compound represented by the following formula (I): wherein R1, R2, R3, R4, R5, R6, R7 and R8 independently represent hydrogen, halogen, alkyl, alkoxy, aryl, carboxyl or alkoxycarbonyl.

Abstract: A radiation sensitive resin composition for i-line light exposure comprising an alkaline soluble resin and a quinonediazide group-containing photosensitizer where said alkaline soluble resin comprises a novolak resin and a mixture of one or two or more of resins selected from the group of (i) polyacrylate, (ii) polymethacrylate, (iii) a polystyrene derivative and (iv) a copolymer consisting of two or more of monomer units selected from the group of acrylic ester, methacrylic ester and styrene derivatives is applied on a substrate such as a substrate for a flat panel display and exposed preferably at the light-exposure quantity of 50 to 500 mJ/cm2 by an i-line light exposure source to form a pattern with high-resolution and a good pattern shape having no tailing.

Abstract: Processes for imaging and developing imageable elements useful as lithographic printing plate precursors either thermally or with ultraviolet radiation that use the same developer are disclosed. The imageable elements comprise a top layer and an underlayer. The top layer contains a phenolic polymer and a material that has either the o-benzoquinonediazide functionality or the o-diazonaphthoquinone functionality. The developer is a 20:80 to 80:20 mixture of (1) an aqueous alkaline developer that has a pH greater than 11 and contains about 2 wt % to about 8 wt % of an alkali metal silicate, and (2) a solvent based developer that contains about 0.5 wt % to about 15 wt % of an organic solvent or mixture of organic solvents.

Abstract: The present invention relates to a composition and a process for preparing a composition that comprises: 1) a film-forming novolak resin wherein the hydrogen atom of a hydroxyl group in the novolak resin is substituted with a naphthoquinonediazidosulfonyl (DNQ) group in a proportion of less than 3.0 mol % per hydrogen atom to form a partially esterified novolak resin; 2) at least one photosensitive component present in an amount sufficient to photosensitize the photoresist composition; and 3) at least one solvent.

Abstract: According to the present invention, there are provided an insulating film for an organic EL element, which has sufficiently low water permeability and a good sectional form and whose reactivity with a basic material and an electrode made from a metal having a low work function is suppressed, an insulating film for an organic EL element, which enables the formation of a through hole or U-shaped cavity therein and has excellent flattening performance, high transparency and high resistance to a resist stripper, and a radiation sensitive resin composition for forming the insulating film. An organic EL display element having this insulating film is free from an emission failure and has sufficiently long luminance half-life period and excellent reliability. The above composition comprises an alkali-soluble resin which may have an epoxy group and a 1,2-quinonediazide compound.

Abstract: The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.

Abstract: A phenolic resin/silicone resin hybrid compound is obtained by effecting hydrolytic condensation of an organooxysilane in the co-presence of a phenolic resin. The hybrid compound is used as the base polymer in a resist for endowing a resist film with excellent adhesion to a metal substrate.

Abstract: The present invention relates to a radiation sensitive photoresist composition comprising a photoacid initiator and a polycyclic polymer comprising repeating units that contain pendant acid labile groups. Upon exposure to an imaging radiation source the photoacid initiator generates an acid which cleaves the pendant acid labile groups effecting a polarity change in the polymer. The polymer is rendered soluble in an aqueous base in the areas exposed to the imaging source.

Abstract: The present invention relates to a composition and a process for preparing a composition that comprises: a) a novolak resin partially esterified with from about 3 to about 7 weight percent of a naphthoquinonediazidosulfonyl group; b) one or more dilution resins; and c) at least one solvent.

Abstract: The present invention relates to a positive-working photosensitive resin precursor composition which is characterized in that it contains (a) polymer in which the chief component comprises structural units of the kind where the bonding between structural units is represented by general formula (1) and (b) photoacid generator, and it can form a pattern by light irradiation and subsequent developing, and the total carboxyl groups contained in said polymer is from 0.02 to 2.0 mmol/g, and it provides a photosensitive resin composition of high sensitivity which can be developed by alkali.

Abstract: The present invention describes encapsulated inorganic resists which are compatible with conventional resist processing such as spin casting from organic solvents and development with aqueous 2.38% TMAH developers. The resist includes encapsulated inorganic materials as resist components, a fact that significantly increases the plasma etch selectivity of the resists compared to conventional polymeric resists. In effect, these resist systems act as a photoimagable single layer hard mask, although use as the top layer in a bilayer resist scheme is contemplated.

Abstract: Provided is a polybenzoxazole precursor having a high purity which does not contain ionic by-products. The above polybenzoxazole precursor comprises a repetitive unit represented by Formula (1): wherein A1 represents a tetravalent aromatic group; N and OH which are bonded to A1 are paired, and the respective pairs of N and OH are bonded to carbons which are adjacent to each other on the same aromatic ring; A2 represents a divalent organic group; and n represents a number of 2 to 300.