Insulative Or Nonmetallic Dielectric Etched Patents (Class 430/317)
  • Patent number: 10361261
    Abstract: This disclosure discloses a manufacturing method of a TFT substrate, a TFT substrate, and an OLED display panel. The manufacturing method of the TFT substrate includes sequentially forming a gate electrode, a gate insulating layer, a polysilicon layer, and a barrier layer on the substrate, the polysilicon layer including a source region, a drain region, and a channel region; the barrier layer above the source and drain regions is etched by a photomask so that the thickness of the barrier layer allows ions to pass through and is not zero; and then the polysilicon layer is ion implanted; through the method, the polysilicon layer of the source and drain regions can be ion implanted without exposing the polysilicon layer, the damage of the polysilicon layer during the process can be avoided, and the stability of the TFT substrate can be improved, thereby improving the display quality.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: July 23, 2019
    Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventors: Chenghao Bu, Hong Fang
  • Patent number: 10330989
    Abstract: Image display device having an electrode forming layer which includes a plurality of gate lines, a plurality of drain lines, a plurality of switching elements and the a plurality of pixel electrodes, and having reference electrode layer between the electrode forming layer and a substrate where the electrode forming layer formed thereon, and the reference electrode layer and the electrode forming layer are insulated by insulating layer.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: June 25, 2019
    Assignees: JAPAN DISPLAY INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
    Inventors: Yoshiaki Nakayoshi, Kazuhiko Yanagawa
  • Patent number: 9786517
    Abstract: Introducing an underfill material over contact pads on a surface of an integrated circuit substrate; and ablating the introduced underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation. A method including first ablating an underfill material to expose an area of contact pads on a substrate using temporally coherent electromagnetic radiation; introducing a solder to the exposed area of the contact pads; and second ablating the underfill material using temporally coherent electromagnetic radiation. A method including introducing an underfill material over contact pads on a surface of an integrated circuit substrate; defining an opening in the underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation; introducing a solder material to the exposed area of the contact pads; and after introducing the solder, removing the sacrificial material.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: October 10, 2017
    Assignee: Intel Corporation
    Inventors: Rajendra C. Dias, Lars D. Skoglund, Anil R. Indluru, Edward R. Prack, Danish Faruqui, Tyler N. Osborn, Amram Eitan, Timothy A. Gosselin
  • Patent number: 9437657
    Abstract: In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: September 6, 2016
    Assignee: HGST, Inc.
    Inventor: Daniel R. Shepard
  • Patent number: 9287372
    Abstract: A method is provided for forming a trench on a FinFET. In an exemplary embodiment, a first inter-layer dielectric layer is formed between a first gate and a second gate of the FinFET in an interposed manner. A second inter-layer dielectric layer is formed above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET. A photoresist layer is formed above the second inter-layer dielectric layer. And part of the second inter-layer dielectric layer that is not below the photoresist layer is etched.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: March 15, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hsueh-Wen Tsau, Chia-Ching Lee, Mrunal A. Khaderbad, Da-Yuan Lee
  • Patent number: 9269827
    Abstract: A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A patterned semiconductor layer is formed on the gate insulating layer. A source is formed on the patterned semiconductor layer. The peripheral portion of the source is oxidized to form an oxide layer, wherein the oxide layer covers the source and a portion of the patterned semiconductor layer. A protective layer and hydrogen ions are formed, wherein the protective layer covers the oxide layer and the patterned semiconductor layer. The patterned semiconductor layer not covered by the oxide layer is doped with the hydrogen ions to form a drain. A TFT is also provided.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: February 23, 2016
    Assignee: CHUNGHWA PICTURE TUBES, LTD.
    Inventors: Chin-Tzu Kao, Ya-Ju Lu, Hsiang-Hsien Chung, Wen-Cheng Lu
  • Patent number: 9224763
    Abstract: Provided are a display device and a method of manufacturing of the display device. The display device includes a substrate subjected to a primary preprocess; a conductor formed on the substrate and subjected to a secondary preprocess; and an insulating layer formed on the substrate and the conductor, in which the primary preprocess is performed for a surface energy of the first substrate higher than a first reference value and the secondary preprocess is performed for a surface energy of the conductor lower than a second reference value.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: December 29, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Min Kang, Jong Kwang Lee, Sang Hee Jang, Jin Ho Ju
  • Patent number: 9184055
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: November 10, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Patent number: 9142421
    Abstract: Techniques are disclosed for double patterning of a lithographic feature using a barrier layer between the pattern layers. In some cases, the techniques may be implemented with double patterning of a one- or two-dimensional photolithographic feature, for example. In some embodiments, the barrier layer is deposited to protect a first photoresist pattern prior to application of a second photoresist pattern thereon and/or to tailor (e.g., shrink) one or more of the critical dimensions of a trench, hole, or other etchable geometric feature to be formed in a substrate or other suitable surface via lithographic processes. In some embodiments, the techniques may be implemented to generate/print small features (e.g., less than or equal to about 100 nm) including one- and two-dimensional features/structures of varying complexity.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: September 22, 2015
    Assignee: INTEL CORPORATION
    Inventors: Charles H. Wallace, Swaminathan Sivakumar, Matthew L. Tingey, Chanaka D. Munasinghe, Nadia M. Rahhal-Orabi
  • Patent number: 9034564
    Abstract: Disclosed are methods for making read sensors using developable bottom anti-reflective coating and amorphous carbon (a-C) layers as junction milling masks. The methods described herein provide an excellent chemical mechanical polishing or planarization (CMP) stop, and improve control in reader critical physical parameters, shield to shield spacing (SSS) and free layer track width (FLTW).
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: May 19, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Wei Gao, Miao Wang, Hai Sun, Ming Mao, Tong Zhao
  • Patent number: 9018776
    Abstract: A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1:
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: April 28, 2015
    Assignee: Cheil Industries, Inc.
    Inventors: Jee-Yun Song, Min-Soo Kim, Hwan-Sung Cheon, Seung-Bae Oh, Yoo-Jeong Choi
  • Patent number: 8993218
    Abstract: One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: March 31, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Li Huai Yang, Chien-Mao Chen
  • Patent number: 8986921
    Abstract: A lithographic material stack including a metal-compound hard mask layer is provided. The lithographic material stack includes a lower organic planarizing layer (OPL), a dielectric hard mask layer, and the metal-compound hard mask layer, an upper OPL, an optional anti-reflective coating (ARC) layer, and a photoresist layer. The metal-compound hard mask layer does not attenuate optical signals from lithographic alignment marks in underlying material layers, and can facilitate alignment between different levels in semiconductor manufacturing.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Daniel C. Edelstein, Bryan G. Morris, Tuan A. Vo, Christopher J. Waskiewicz, Yunpeng Yin
  • Patent number: 8986918
    Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Sen Liu
  • Patent number: 8980532
    Abstract: In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.
    Type: Grant
    Filed: November 13, 2013
    Date of Patent: March 17, 2015
    Assignee: Contour Semiconductor, Inc.
    Inventor: Daniel R. Shepard
  • Patent number: 8945820
    Abstract: The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: February 3, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda, Yoshinori Taneda
  • Patent number: 8927189
    Abstract: A photoresist composition including a binder resin including a novolac resin represented by Chemical Formula 1, a diazide photosensitive initiator, and a solvent including a base solvent and an auxiliary solvent, wherein the base solvent includes propylene glycol monomethyl ether acetate, and the auxiliary solvent includes dimethyl-2-methylglutarate and ethyl beta-ethoxypropionate, wherein in Chemical Formula 1, R1 to R9 are each independently a hydrogen atom or an alkyl group, “a” is an integer number from 0 through 10, “b” is an integer number from 0 through 100, and “c” is an integer number from 1 through 10.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: January 6, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Gwui-Hyun Park, Pil Soon Hong, Jinho Ju, Taegyun Kim, Jin-Su Byun, Dong Min Kim, Seung Ki Kim, Doo Youn Lee
  • Patent number: 8921032
    Abstract: A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable polymer than the second molecular configuration, and the self-assemblable polymer is configurable from the first molecular configuration to the second molecular configuration, from the second molecular configuration to the first molecular configuration, or both, by the application of a stimulus. The polymer is of use in a method for providing an ordered, periodically patterned layer of the polymer on a substrate, by ordering and annealing the polymer in its second molecular configuration and setting the polymer when it is in the first molecular configuration.
    Type: Grant
    Filed: April 20, 2011
    Date of Patent: December 30, 2014
    Assignee: ASML Netherlands B.V.
    Inventors: Emiel Peeters, Sander Frederik Wuister, Roelof Koole
  • Patent number: 8911932
    Abstract: Disclosed are the deactivation mechanism and chemistry platforms that make high-silicon hardmask films photo-imageable like positive-tone photoresist for microphotolithography. The deactivation mechanism requires a catalyst to promote crosslinking reactions, and a photoacid generator to deactivate the catalyst. The initial hardmask films are soluble in developers. If not radiated, films become insoluble in developers due to crosslinking reactions promoted by catalyst. If radiated, films remain soluble in developers due to deactivation of catalyst by photoacid generator. Compositions of positive-tone photo-imageable hardmask based on the chemistry of polysiloxane and polysilsesquioxanes are disclosed as well. Also disclosed is a method of modifying polysiloxane and polysilsesquioxane films for controlled diffusion of catalysts, photoacid generators, and quenchers.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: December 16, 2014
    Inventor: Sam Xunyun Sun
  • Publication number: 20140354903
    Abstract: A touch panel and a method for manufacturing the same are introduced and characterized by enhanced process yield of the touch panel. The manufacturing method includes stacking a first conductive layer on a substrate, stacking an electrode on the first conductive layer, stacking a first insulating transparent layer on the electrode and the first conductive layer, exposing the electrode from the first insulating transparent layer by exposure and development, stacking a second insulating transparent layer on the electrode, the first conductive layer, and the first insulating transparent layer, stacking a second conductive layer on the second insulating transparent layer, stacking a metal layer on the electrode and the substrate to form a first transmission line, and stacking the metal layer on at least a portion of the second conductive layer and the substrate to form a second transmission line.
    Type: Application
    Filed: November 6, 2013
    Publication date: December 4, 2014
    Applicant: ETURBOTOUCH TECHNOLOGY INC.
    Inventors: KUEI-CHING WANG, TA-HU LIN
  • Patent number: 8846301
    Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: September 30, 2014
    Assignee: Cornell University
    Inventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Taylor
  • Patent number: 8822138
    Abstract: There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: September 2, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Tetsuya Shinjo, Hirokazu Nishimaki, Yasushi Sakaida, Keisuke Hashimoto
  • Patent number: 8795952
    Abstract: Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: August 5, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Mark H. Somervell, Benjamen M. Rathsack, Ian J. Brown, Steven Scheer, Joshua Hooge
  • Patent number: 8790859
    Abstract: The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a photosensitizer including a diazide-based compound, and a solvent: wherein R1-R9 each include a hydrogen atom, an alkyl group, or a benzyl group, a is an integer from 0 to 10, b is an integer from 0 to 100, and c is an integer from 0 to 10.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: July 29, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sang-Hyun Yun, Woo-Seok Jeon, Jung-In Park, Hi-Kuk Lee, Byung-Uk Kim, Dong-Min Kim, Seung-Ki Kim, Ja-Hun Byeon
  • Patent number: 8778598
    Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: July 15, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yool Kang, Suk-joo Lee, Jung-hyeon Lee, Shi-yong Yi
  • Patent number: 8758982
    Abstract: Methods, algorithms, processes, circuits, and/or structures for laser patterning suitable for customized RFID designs are disclosed. In one embodiment, a method of laser patterning of an identification device can include the steps of: (i) depositing a patternable resist formulation on a substrate having configurable elements and/or materials thereon; (ii) irradiating the resist formulation with a laser tool sufficiently to change the solubility characteristics of the resist in a developer; and (iii) developing exposed areas of the resist using the developer. Embodiments of the present invention can advantageously provide a relatively low cost and high throughput approach for customized RFID devices.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: June 24, 2014
    Assignee: Thin Film Electronics ASA
    Inventors: Criswell Choi, Patrick Smith, James Montague Cleeves, Joerg Rockenberger, Christopher Gudeman, J. Devin MacKenzie
  • Patent number: 8728710
    Abstract: Disclosed is a method of making polysiloxane and polysilsesquioxane based hardmask respond to radiations with positive tone and negative tone simultaneously. Unradiated films are insoluble in developers, showing positivity tone. Radiated films are insoluble in developers as well, showing negative tone. Only half-way radiated films are soluble in developers. The dual-tone photo-imageable hardmask produces splitted patterns. Compositions of dual-tone photo-imageable hardmask based on the chemistry of polysiloxane and polysilsesquioxanes are disclosed as well. Further disclosed are processes of using photo-imageable hardmasks to create precursor structures on semiconductor substrates with or without an intermediate layer.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: May 20, 2014
    Inventor: Sam Xunyun Sun
  • Patent number: 8722541
    Abstract: A method of fabricating a semiconductor device is disclosed. The exemplary method includes providing a substrate including a device layer and a sacrificial layer formed over the device layer and patterning the sacrificial layer thereby defining a cut pattern. The cut pattern of the sacrificial layer having an initial width. The method further includes depositing a mask layer over the device layer and over the cut pattern of the sacrificial layer. The method further includes patterning the mask layer thereby defining a line pattern including first and second portions separated by the cut pattern of the sacrificial layer and selectively removing the cut pattern of the sacrificial layer thereby forming a gap that separates the first and second portions of the line pattern of the mask layer. The method further includes patterning the device layer using the first and second portions of the line pattern of the mask layer.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: May 13, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Chih-Han Lin
  • Patent number: 8715913
    Abstract: The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: May 6, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda, Fujio Yagihashi
  • Patent number: 8663898
    Abstract: There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: March 4, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takeru Watanabe, Yusuke Biyajima, Daisuke Kori, Takeshi Kinsho, Toshihiko Fujii
  • Patent number: 8652750
    Abstract: A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: February 18, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Toshiharu Yano, Koji Hasegawa
  • Patent number: 8652751
    Abstract: A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: February 18, 2014
    Assignee: Fujitsu Limited
    Inventors: Miwa Kozawa, Koji Nozaki
  • Patent number: 8647810
    Abstract: A resist lower layer film-forming composition includes (A) a polymer that includes a cyclic carbonate structure. The polymer (A) includes a structural unit (I) shown by the following formula (1).
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 11, 2014
    Assignee: JSR Corporation
    Inventors: Kazuo Nakahara, Tomoki Nagai
  • Patent number: 8609324
    Abstract: Methods of forming electrically conductive and/or semiconductive features for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. The features can have a reduced pitch in one direction and a wider pitch in another direction. Conventional photo-lithography steps can be used in combination with pitch-reduction techniques to form elongate, pitch-reduced features such as bit-line contacts, for example.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: December 17, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Luan C. Tran
  • Patent number: 8603732
    Abstract: There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: December 10, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takeru Watanabe, Takeshi Kinsho, Katsuya Takemura, Toshihiko Fujii, Daisuke Kori
  • Patent number: 8592130
    Abstract: A photosensitive resin composition comprising: (A) a binder polymer having a divalent group represented by formula (I), (II) and (III); (B) a photopolymerizing compound; and (C) a photopolymerization initiator. [In formulas (I), (II) and (III), R1, R2, R4 each independently represents a hydrogen atom or a methyl group, R3 is C1-C3 alkyl group, etc., m is an integer of 0-5, R5, R6 and R7 each independently represents a hydrogen atom or a C1-C5 alkyl group, and at least two among R5, R6 and R7 are C1-C5 alkyl groups.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: November 26, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Masahiro Miyasaka, Yukiko Muramatsu
  • Patent number: 8586284
    Abstract: The invention provides a photosensitive resin composition comprising (A) 100 parts by weight of a binder polymer having 10-65 parts by weight of a divalent group obtained from a specific styrene compound and its derivative, 5-55 parts by weight of a divalent group obtained from a specific (meth)acrylic acid ester and its derivative and 15-50 parts by weight of a divalent group obtained from (meth)acrylic acid, (B) a photopolymerizing compound and (C) a photopolymerization initiator.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: November 19, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Hanako Nankawa, Masahiro Miyasaka, Yukiko Muramatsu
  • Patent number: 8563225
    Abstract: A method of forming a hard mask in a semiconductor device which is self-aligned with a MTJ formed in the device is provided. The method includes the steps of: forming a hard mask material layer on an upper surface of a magnetic stack in the MTJ; forming an anti-reflective coating (ARC) layer on at least a portion of an upper surface of the hard mask material layer, the ARC layer being selected to be removable by a wet etch; forming a photoresist layer on at least a portion of an upper surface of the ARC layer; removing at least a portion of the photoresist layer and the ARC layer to thereby expose at least a portion of the hard mask material layer; etching the hard mask material layer to remove the exposed portion of the hard mask material layer; and performing a wet strip to remove remaining portions of the ARC layer and photoresist layer in a same processing step without interference to the magnetic stack.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: October 22, 2013
    Assignee: International Business Machines Corporation
    Inventors: Solomon Assefa, Sivananda K. Kanakasabapathy
  • Patent number: 8563227
    Abstract: The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: October 22, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Ming Chen, Ya-Ping Tseng, Ming-Tao Ho
  • Patent number: 8507187
    Abstract: A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.
    Type: Grant
    Filed: July 9, 2008
    Date of Patent: August 13, 2013
    Assignees: International Business Machines Corporation, Freescale Semiconductor, Inc.
    Inventors: Veeraraghavan S. Basker, Willard E. Conley, Steven J. Holmes, David V. Horak
  • Patent number: 8501386
    Abstract: A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: August 6, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda, Toshiharu Yano, Koji Hasegawa
  • Patent number: 8460853
    Abstract: A photosensitive resin composition comprising a (A) binder polymer, a (B) photopolymerizing compound having ethylenic unsaturated bonds in the molecule, a (C) photopolymerization initiator and a (D) polymerization inhibitor, wherein the (C) photopolymerization initiator comprises an acridine compound, and the content of the (D) polymerization inhibitor is 20-100 ppm by weight.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: June 11, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Yoshiki Ajioka, Mitsuru Ishi, Junichi Iso
  • Patent number: 8460852
    Abstract: A photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizing compound having an ethylenic unsaturated bond in the molecule, (C) a photopolymerization initiator and (D) a polymerization inhibitor, wherein the content of the (D) polymerization inhibitor is 20-100 ppm by mass based on the total solid content of the composition.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: June 11, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Yoshiki Ajioka, Mitsuru Ishi, Junichi Iso
  • Patent number: 8440576
    Abstract: A method for patterning a material is provided. The method includes patterning a second material over a first material over a substrate. A surface portion of the patterned second material is converted to form a third material and a remaining patterned second material, wherein the third material is around the remaining patterned second material. One of the remaining patterned second material and the third material is removed to form a mask. The first material is patterned by using the mask.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: May 14, 2013
    Assignee: Macronix International Co., Ltd.
    Inventor: Shih-Ping Hong
  • Patent number: 8435724
    Abstract: In a fabricating method of a touch screen panel, a conductive layer and an insulating layer are sequentially formed on a same surface of a transparent substrate. The conductive layer and the insulating layer are co-patterned using a halftone mask to form first connection patterns having separated patterns and the insulating layer being patterned on the first connection patterns to expose regions of the first connection patterns. A transparent electrode layer is formed on the transparent substrate having the first connection patterns and the insulating layer. The transparent electrode layer is patterned to form first sensing patterns connected to the first connection patterns through the exposed regions of the first connection patterns and connected along a first direction, and to form second sensing patterns disposed between the first sensing patterns, wherein the second sensing patterns are insulated from the first sensing patterns and connected along a second direction.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: May 7, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Woo-Sik Jun, Do-Youb Kim, Ung-Soo Lee
  • Patent number: 8431331
    Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.
    Type: Grant
    Filed: November 10, 2008
    Date of Patent: April 30, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yool Kang, Suk-joo Lee, Jung-hyeon Lee, Shi-yong Yi
  • Patent number: 8426118
    Abstract: Methods of forming electrically conductive and/or semiconductive features for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. The features can have a reduced pitch in one direction and a wider pitch in another direction. Conventional photo-lithography steps can be used in combination with pitch-reduction techniques to form elongate, pitch-reduced features such as bit-line contacts, for example.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: April 23, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Luan C. Tran
  • Patent number: 8426112
    Abstract: There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): where X1 is a group of Formula (2), Formula (3), Formula (4) or Formula (4-1): and a solvent. The polymer may contain, besides the partial structure of Formula (1), a partial structure of Formula (5): (R1)a(R3)bSi(O—)4?(a+b)??Formula (5) and/or a partial structure of Formula (6): [(R4)cSi(O—)3?c]2Y??Formula (6).
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: April 23, 2013
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Makoto Nakajima, Wataru Shibayama, Yuta Kanno
  • Patent number: 8399174
    Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: March 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung Taek Kim, Hyun Woo Kim, Sang Ouk Kim, Shi Yong Yi, Seong Woon Choi
  • Patent number: 8377631
    Abstract: Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: February 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Mark W. Hart, Ratnam Sooriyakumaran