Making Electrical Device Patents (Class 430/311)
  • Patent number: 11029597
    Abstract: Provided are a method for producing a pattern laminate, the pattern laminate having a first layer having a pattern on an object to be processed and a second layer, which has a small waviness after etching (?LWR), in which the method includes a step of forming a first layer having a pattern on an object to be processed and a step of forming a second layer on the first layer, and the glass transition temperature of the first layer is 90° C. or higher; a method for producing a reversal pattern; and a pattern laminate.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: June 8, 2021
    Assignee: FUJIFILM Corporation
    Inventors: Yuichiro Goto, Kazuhiro Marumo
  • Patent number: 11024344
    Abstract: A conductive landing pad structure is formed utilizing a selective deposition process on a surface of an electrically conductive structure that is embedded in a first dielectric material layer. The conductive landing pad structure is located on an entirety of a surface of the electrically conductive structure and does not extend onto the first dielectric material layer. A conductive metal-containing structure is formed on a physically exposed surface of the conductive landing pad structure. During the formation of the conductive metal-containing structure which includes ion beam etching and/or a wet chemical etch, no conductive landing pad material particles re-deposit on the sidewalls of the conductive metal-containing structure.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: June 1, 2021
    Assignee: International Business Machines Corporation
    Inventor: Chih-Chao Yang
  • Patent number: 10998130
    Abstract: In a coil component and a method for manufacturing the same, a winding part of a coil is grown by plating so as to extend between resin walls of a resin body provided before the coil is grown by plating. The resin wall is interposed between adjacent turns of the winding part of the coil during the plating growth, and therefore contact between adjacent turns of the winding part of the coil cannot occur.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: May 4, 2021
    Assignee: TDK CORPORATION
    Inventors: Hitoshi Ohkubo, Masazumi Arata, Manabu Ohta, Shou Kawadahara, Yoshihiro Maeda, Takahiro Kawahara, Hokuto Eda, Shigeki Sato
  • Patent number: 10994491
    Abstract: A three-dimensional lattice architecture with a thickness hierarchy includes a first surface and a second surface separated from each other with a distance therebetween defining a thickness of the three-dimensional lattice architecture; a plurality of angled struts extending along a plurality of directions between the first surface and the second surface; a plurality of nodes connecting the plurality of angled struts with one another forming a plurality of unit cells. At least a portion of the plurality of angled struts are internally terminated along the thickness direction of the lattice structure and providing a plurality of internal degrees of freedom towards the first or second surface of the lattice architecture.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: May 4, 2021
    Assignee: HRL Laboratories, LLC
    Inventors: Jacob M. Hundley, Tobias A. Schaedler, Sophia S. Yang, Alan J. Jacobsen
  • Patent number: 10983428
    Abstract: A mask includes a substrate, a main pattern, a first assist pattern, and a second assist pattern. The main pattern is disposed on the substrate. The main pattern includes a first pattern and second patterns. Two of the second patterns are disposed at two opposite sides of the first pattern in a first direction. The first assist pattern is disposed on the substrate and disposed in the main pattern. The second assist pattern is disposed on the substrate and disposed outside the main pattern. The first assist pattern disposed in the main pattern may be used to improve the pattern transferring performance in a photolithography process using the mask.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: April 20, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chen Sun, Yu-Cheng Tung, Sheng-Yuan Hsueh
  • Patent number: 10968321
    Abstract: The invention relates a polyacrylate-polysilane block copolymer of general structure (I): wherein m and n independent of one another, are integers ranging from 2 to 4000; p is an integer ranging from 0 to 5; q is an integer ranging from 1 to 5; R1 represents hydrogen, straight-chain or branched alkyl group having 1 to 4 carbon atoms; R2 represents hydrogen, straight-chain or branched alkyl group having 1 to 18 carbon atoms; R3 represents hydrogen, hydroxyl group, straight-chain or branched alkyl group having 1 to 4 carbon atoms, or an C6-C14 aryl group; L is a linking moiety representing amine (—NH—) group, amide (—C(O)NH—) group, urea (—NHC(O)NH—) group, urethane (—OC(O)NH—) group or methylene (—CH2—) group; R4, R5 and R6 independent of one another, represents hydrogen, straight-chain or branched, alkyl group having 1 to 8 carbon atoms or polydimethylsiloxane group; and R7 represents hydrogen or methyl group.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: April 6, 2021
    Assignee: Clariant Plastics & Coatings Ltd
    Inventor: Someshwarnath Dinanath Pandey
  • Patent number: 10969677
    Abstract: The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: April 6, 2021
    Assignee: LG CHEM, LTD.
    Inventors: Ji Young Hwang, Han Min Seo, Nam Seok Bae, Seung Heon Lee, Dong Hyun Oh, Chan Hyoung Park, Ki-Hwan Kim, Ilha Lee
  • Patent number: 10926261
    Abstract: Large bioreactors based on microfluidic technology, and methods of manufacturing the same, are provided, The big microbioreactor can include a chip or substrate having the microfluidic channels thereon, and the chip can be manufactured by forming a master mold, forming a male mold from a photopolymer plate using replica molding with the Fmold, and transferring features of the male to a polymer material.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: February 23, 2021
    Assignee: The Florida International University Board of Trustees
    Inventors: Shekhar Bhansali, Maximiliano S. Perez, Betiana Lerner, Natalia Bourguignon
  • Patent number: 10910309
    Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: February 2, 2021
    Assignee: Infineon Technologies AG
    Inventors: Ravi Joshi, Juergen Steinbrenner
  • Patent number: 10896805
    Abstract: A method for electron beam lithography. The method may comprise fabricating a multi-layer mask and interposing the multi-layer mask between an electron beam and an energy-sensitive layer to thereby expose the energy-sensitive layer to the electron beam through the mask. Fabricating the multi-layer mask may comprises providing a first mask layer fabricated from a first mask material (e.g. silicon nitride) which defines one or more feature apertures corresponding to features of interest and coating an electron-energy-reducing material (e.g. gold) onto the first mask layer to thereby provide a second mask layer.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: January 19, 2021
    Inventor: Gary William Leach
  • Patent number: 10865262
    Abstract: An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: December 15, 2020
    Assignee: NISSAN CHEMICAL CORPORATION
    Inventors: Ryuta Mizuochi, Yasunobu Someya, Hiroyuki Wakayama, Rikimaru Sakamoto
  • Patent number: 10836896
    Abstract: The present invention provide a composition comprising: a polyacrylate-polysilane block copolymer of structure (I) and an organic polymer which is different from the block copolymer of formula (I) wherein m and n independent of one another, are integers ranging from 2 to 4000; p is an integer ranging from 0 to 5; q is an integer ranging from 1 to 5; R1 represents hydrogen, straight-chain or branched alkyl group having 1 to 4 carbon atoms; R2 represents hydrogen, straight-chain or branched alkyl group having 1 to 18 carbon atoms; R3 represents hydrogen, hydroxyl group, straight-chain or branched alkyl group having 1 to 4 carbon atoms, or an C6-C14-aryl group; L is a single bond or a bivalent group —NH—, —C(O)NH—, —NHC(O)NH—, —OC(O)NH— or —CH2—; R4, R5 and R6 independent of one another, represent hydrogen, straight-chain or branched alkyl group having 1 to 8 carbon atoms or a polydimethylsiloxane residue; and R7 represents hydrogen or methyl group.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: November 17, 2020
    Assignee: Clariant Plastics & Coatings Ltd
    Inventors: Someshwarnath Dinanath Pandey, Achintya Kumar Sen, Vinesh Ramesh Adep
  • Patent number: 10831104
    Abstract: A photoresist film is patterned into an array of island shapes with improved critical dimension uniformity and no phase edges by using two alternating phase shifting masks (AltPSMs) and one post expose bake (PEB). The photoresist layer is exposed with a first AltPSM having a line/space (L/S) pattern where light through alternating clear regions on each side of an opaque line is 180° phase shifted. Thereafter, there is a second exposure with a second AltPSM having a L/S pattern where opaque lines are aligned orthogonal to the lengthwise dimension of opaque lines in the first exposure, and with alternating 0° and 180° clear regions. Then, a PEB and subsequent development process are used to form an array of island shapes. The double exposure method enables smaller island shapes than conventional photolithography and uses relatively simple AltPSM designs that are easier to implement in production than other optical enhancement techniques.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: November 10, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jesmin Haq, Tom Zhong, Zhongjian Teng
  • Patent number: 10809616
    Abstract: New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: October 20, 2020
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Emad Aqad, Mingqi Li, Joseph Mattia, Cheng-Bai Xu
  • Patent number: 10793712
    Abstract: Provided are a heat-curable resin composition for semiconductor encapsulation that is capable of yielding a cured product superior in tracking resistance and dielectric property, and has a favorable continuous moldability; and a semiconductor device encapsulated by a cured product of such resin composition. The heat-curable resin composition for semiconductor encapsulation contains: (A) an epoxy resin other than a silicone-modified epoxy resin, being solid at 25° C.; (B) a silicone-modified epoxy resin; (C) a cyclic imide compound having, in one molecule, at least one dimer acid backbone, at least one linear alkylene group having not less than 6 carbon atoms, at least one alkyl group having not less than 6 carbon atoms, and at least two cyclic imide groups; (D) an organic filler; and (E) an anionic curing accelerator.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: October 6, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yoshihiro Tsutsumi, Naoyuki Kushihara, Norifumi Kawamura, Yuki Kudo
  • Patent number: 10788746
    Abstract: A relief image is prepared by: A) imaging an imageable material to form a mask element; B) exposing a relief-forming precursor through the mask element; C) removing the mask element; and D) developing the imaged relief-forming precursor. The imageable material has, in order: (a) a transparent polymeric carrier sheet; (b) a non-ablatable light-to-heat converting having an average dry thickness of 1-5 ?m and comprising: (i) an infrared radiation absorbing material at 0.1-5 weight %; (ii) a thermally crosslinked organic polymeric binder material; and (iii) non-thermally ablatable particles having an average particle size of 0.1-20 ?m in an amount of 0.2-10 weight %; and (c) a non-silver halide thermally-ablatable imaging layer (IL) disposed on the LTHC layer, the IL comprising a second infrared radiation absorbing material and a UV-light absorbing material dispersed within one or more thermally-ablatable polymeric binder materials. The imageable material can be included in a relief image-forming assembly.
    Type: Grant
    Filed: February 16, 2018
    Date of Patent: September 29, 2020
    Assignee: MIRACLON CORPORATION
    Inventors: Kevin M. Kidnie, Elsie Anderson Fohrenkamm, M. Zaki Ali
  • Patent number: 10788754
    Abstract: Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A?) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A?); and an electronic device manufacturing method including such a pattern forming method.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: September 29, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Wataru Nihashi, Toru Tsuchihashi, Hideaki Tsubaki
  • Patent number: 10768349
    Abstract: A reflective diffraction grating and a fabrication method are provided. The reflective diffraction grating includes a substrate, a UV-absorbing layer, a grating layer having a binary surface-relief pattern formed therein, and a conforming reflective layer. Advantageously, the UV-absorbing layer absorbs light at a UV recording wavelength to minimize reflection thereof by the substrate during holographic patterning at the UV recording wavelength.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: September 8, 2020
    Assignee: Lumentum Operations LLC
    Inventors: John Michael Miller, Hery Djie, Patrick Lu, Xiaowei Guo, Qinghong Du, Eddie Chiu, Chester Murley
  • Patent number: 10717236
    Abstract: The present disclosure relates to a method for curing a heat-curable material (1) in an embedded curing zone (2) and an assembly resulting from such method. The method comprises providing a heat-conducting strip (3) partially arranged between a component (9) and a substrate (10) that form the embedded curing zone (2) therein between. The heat-conducting strip (3) extends from the embedded curing zone (2) to a radiation-accessible zone (7) that is distanced from the embedded curing zone (2) and at least partially free of the component (9) and the substrate (10). The method further comprises irradiating the heat-conducting strip (3) in the radiation-accessible zone (7) by means of electromagnetic radiation (6).
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: July 21, 2020
    Assignee: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
    Inventors: Jeroen van den Brand, Ashok Sridhar, Anja Henckens, Gunther Dreezen
  • Patent number: 10691013
    Abstract: An EUV lithography system and method of manufacturing thereof includes: an EUV light source; a chuck being thermally conducting and smooth having a surface with a predetermined chuck flatness; and a reflective lens system for directing EUV light from the EUV light source over the surface of the chuck.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: June 23, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Majeed A. Foad
  • Patent number: 10678127
    Abstract: In one embodiment of the disclosure, it is proposed a photolithography device for generating structure on a photoresist substrate, the photolithography device comprising a light illumination unit and a photomask. The photomask is remarkable in that it comprises at least one layer of dielectric material and a medium having a refractive index lower than that of said dielectric material, wherein a surface of said at least one layer of dielectric material has at least one abrupt change of level forming a step, and wherein at least a base and lateral part of said surface, with respect to said step and a propagation direction of an electromagnetic wave from said light illumination unit, is in contact with said medium.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: June 9, 2020
    Assignee: InterDigital CE Patent Holdings, SAS
    Inventors: Artem Boriskin, Laurent Blonde
  • Patent number: 10678125
    Abstract: A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: June 9, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10663854
    Abstract: A method of fabricating a photomask comprising providing a photomask blank including a phase shifting layer, a first light blocking layer, a first resist layer, a second light blocking layer and a second resist layer stacked sequentially in this order on a substrate, forming second resist patterns, forming second light blocking patterns, forming first resist patterns, forming first light blocking patterns and phase shifting patterns, removing the first resist patterns, and selectively removing at least one of the first light blocking patterns, wherein the second resist layer has a thickness such that all of the second resist layer is removed while the first resist layer is patterned for exposing the second light blocking layer.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: May 26, 2020
    Assignee: SK hynix Inc.
    Inventor: Dong Sik Jang
  • Patent number: 10658521
    Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes at least a first channel region and a second channel region. The first channel region and the second channel region each include metal gate structures surrounding a different nanosheet channel layer. The metal gate structures of the first and second channel regions are respectively separated from each other by an unfilled gap. The method includes forming a gap fill layer between and in contact with gate structures surrounding nanosheet channel layers in multiple channel regions. Then, after the gap fill layer has been formed for each nanosheet stack, a masking layer is formed over the gate structures and the gap fill layer in at least a first channel region. The gate structures and the gap fill layer in at least a second channel region remain exposed.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: May 19, 2020
    Assignee: International Business Machines Corporation
    Inventors: Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Ruqiang Bao, Muthumanickam Sankarapandian, Nelson Felix
  • Patent number: 10636682
    Abstract: In a substrate processing apparatus, the inner peripheral edge of a second-cup canopy part radially opposes an outer peripheral surface of an opposing-member side wall part. This suppresses dispersion of processing liquids to above a cup part. A second-cup gap distance that is a radial distance between the outer peripheral surface of the opposing-member side wall part and the inner peripheral edge of the second-cup canopy part is greater than a holder gap distance that is a radial distance between the inner peripheral surface of the opposing-member side wall part and the outer peripheral surface of the substrate holder. This prevents or suppresses the possibility that, when a second processing liquid dispersed from a substrate is received by a second cup, the second processing liquid may be pushed downward by a downward airflow. Accordingly, a plurality of types of processing liquids will be separately received by a plurality of cups.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: April 28, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Noriyuki Kikumoto, Masahiro Kimura, Shuichi Yasuda, Kazuhiro Fujita
  • Patent number: 10622339
    Abstract: A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: April 14, 2020
    Assignee: Xiamen Changelight Co., Ltd.
    Inventors: Zhiwei Lin, Qunxiong Deng, Kaixuan Chen, Zhijie Ke, Xiangjing Zhuo
  • Patent number: 10619019
    Abstract: A film is described comprises a (meth)acrylic polymer and a polyvinyl acetal (e.g. butyral) resin. The film has a tensile elastic modulus of at least 1 MPa at 25° C. and 1 hertz and a glass transition temperature (i.e. Tg) less than 30 C. The film typically comprises photoinitiator as a result of the method by which the film was made. In one embodiment, the film is heat bondable and further comprising a backing.
    Type: Grant
    Filed: December 7, 2015
    Date of Patent: April 14, 2020
    Assignee: 3M Innovative Properties Company
    Inventors: Corinne E. Lipscomb, Mary M. Caruso Dailey, Jonathan E. Janoski, Anthony F. Schultz
  • Patent number: 10615042
    Abstract: A method of manufacturing a semiconductor apparatus comprises forming a first photoresist on each of a first portion and a second portion of a member, exposing the first photoresist on the first portion using a first photomask, exposing the first photoresist on the second portion using a second photomask, forming a first resist pattern by developing the first photoresist on the first portion and the second portion, etching the first portion and the second portion using the first resist pattern as a mask, forming a second photoresist on a third portion of the member, exposing the second photoresist on the third portion using a third photomask, forming a second resist pattern by developing the second photoresist on the third portion, and etching the third portion using the second resist pattern as a mask.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: April 7, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Nobuyuki Endo
  • Patent number: 10586695
    Abstract: Method for performing cleaning treatment on a substrate having a fine pattern provided with a film formed on the surface, comprises: a silylating step of supplying a silylating agent to the surface of the substrate and silylating the surface of the substrate; and a liquid-chemical cleaning step of supplying a cleaning liquid chemical to the surface of the substrate and cleaning the surface of the substrate after, or simultaneously with, the silylating step.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: March 10, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Takashi Ota, Taiki Hinode
  • Patent number: 10564546
    Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: February 18, 2020
    Assignee: JSR CORPORATION
    Inventors: Tomohiko Sakurai, Sousuke Oosawa, Hiromitsu Nakashima, Kousuke Terayama
  • Patent number: 10553769
    Abstract: A light transmissive first insulating film having light transmissive property to visible light, a second insulating film arranged opposite to the first insulating film, a plurality of conductor patterns formed of, for example, mesh patterns having the light transmissive property to the visible light and formed on a surface of at least one of the first insulating film and the second insulating film, a plurality of first light-emitting devices connected to any two conductor patterns of the plurality of conductor patterns, and a resin layer arranged between the first insulating film and the second insulating film to hold the first light-emitting devices are included.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: February 4, 2020
    Assignee: Toshiba Hokuto Electronics Corporation
    Inventor: Keiichi Maki
  • Patent number: 10545404
    Abstract: To provide a production method of a pattern-formed body, which can simply provide a pattern with surface free energy differences. A cured resin layer, to which a pattern of a master (20) has been transferred, is formed on a base (11), by applying a resin composition (12) containing a first compound exhibiting low surface free energy, and a second compound exhibiting surface free energy higher than the surface free energy of the first compound, on the base (11), and curing the resin composition (12) with bringing the resin composition into contact with a master (20), to which a pattern has been formed with surface free energy differences.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: January 28, 2020
    Assignee: DEXERIALS CORPORATION
    Inventors: Makiya Ito, Ryosuke Endo, KyungSung Yun, Hirofumi Kondo
  • Patent number: 10527931
    Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: January 7, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido, Yasushi Okubo
  • Patent number: 10514613
    Abstract: A pattern modification method and a patterning process are provided. The method includes extracting a first pattern and a second pattern to be respectively transferred to a first target portion and a second target portion of a resist layer. The method also includes obtaining regional information of the first target portion and the second target portion. The method includes determining a first desired focus position for transferring the first pattern based on the regional information. In addition, the method includes determining a second desired focus position for transferring the second pattern based on the regional information. The method includes modifying one or both of the first pattern and the second pattern. As a result, focus positions of the first pattern and the second pattern are shifted to be substantially and respectively positioned at the first desired focus position and the second desired focus position during an exposure operation.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Ming Chang, Ru-Gun Liu, Shuo-Yen Chou, Chien-Wen Lai, Zengqin Zhao
  • Patent number: 10514605
    Abstract: The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: December 24, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro Tachibana, Tsutomu Ogihara, Hiroko Nagai, Romain Lallement, Karen E. Petrillo
  • Patent number: 10495970
    Abstract: The present disclosure describes a method for improving post-photolithography critical dimension (CD) uniformity for features printed on a photoresist. A layer can be formed on one or more printed features and subsequently etched to improve overall CD uniformity across the features. For example the method includes a material layer disposed over a substrate and a photoresist over the material layer. The photoresist is patterned to form a first feature with a first critical dimension (CD) and a second feature with a second CD that is larger than the first CD. Further, a layer is formed with one or more deposition/etch cycles in the second feature to form a modified second CD that is nominally equal to the first CD.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: December 3, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Xi-Zong Chen, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Chih-Hsuan Lin
  • Patent number: 10471537
    Abstract: A direct diode laser processing apparatus includes a laser oscillator that emits a multiple-wavelength laser beam, a transmission fiber that transmits the multiple-wavelength laser beam emitted from the laser oscillator, and a laser processing machine that condenses the multiple-wavelength laser beam transmitted through the transmission fiber and processes a workpiece. According to chromatic aberrations of the multiple-wavelength laser beam and the wavelength dependence of emissivity of the workpiece, a light intensity distribution of the multiple-wavelength laser beam in a thickness direction of the workpiece is provided with a plurality of peaks.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: November 12, 2019
    Assignee: AMADA HOLDINGS CO., LTD.
    Inventor: Kaori Usuda
  • Patent number: 10474034
    Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: November 12, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Il-yong Jang, Hyung-ho Ko, Jin-sang Yoon
  • Patent number: 10468184
    Abstract: In a coil component 1 and a method for manufacturing the same, a winding part of a coil is grown by plating so as to extend between resin walls of a resin body provided before the coil is grown by plating. The resin wall is interposed between adjacent turns of the winding part of the coil during the plating growth, and therefore contact between adjacent turns of the winding part of the coil cannot occur.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: November 5, 2019
    Assignee: TDK CORPORATION
    Inventors: Hitoshi Ohkubo, Masazumi Arata, Manabu Ohta, Shou Kawadahara, Yoshihiro Maeda, Takahiro Kawahara, Hokuto Eda, Shigeki Sato
  • Patent number: 10431457
    Abstract: A method for forming a patterned structure includes following steps. First lines elongated in a first direction and second lines elongated in a second direction in a layout pattern are decomposed into two masks. A first mask includes first line patterns and a first block pattern. A second mask includes second line patterns and a second block pattern. Two photolithography processes with the first mask and the second mask are performed for forming a patterned structure including first line structures and second line structures. Each first line structure is elongated in the first direction. The first line structures are defined by a region where the first line patterns and the second block pattern overlap with one another. Each second line structure is elongated in the second direction. The second line structures are defined by a region where the second line patterns and the first block pattern overlap with one another.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: October 1, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: En-Chiuan Liou, Yu-Cheng Tung
  • Patent number: 10423070
    Abstract: A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: September 24, 2019
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Masashi Kanaoka, Masanori Imamura, Taiji Matsu, Hidetoshi Sagawa, Atsushi Tanaka, Kazuhiro Tadokoro, Kazuya Ono, Shinichi Takada, Tsuyoshi Mitsuhashi
  • Patent number: 10388721
    Abstract: A capacitor structure is provided that includes conformal layers of a lower electrode, a high-k metal oxide dielectric, and an upper electrode. The capacitor structure is formed by a single process which enables the in-situ conformal deposition of the electrode and dielectric layers of the capacitor structure. The single process includes atomic layer deposition in which a metal-containing precursor is selected to provide each of the layers of the capacitor structure. The lower electrode layer is formed by utilizing the metal-containing precursor and a first reactive gas, the high-k metal oxide dielectric layer is provided by switching the first reactive gas to a second reactive gas, and the upper electrode layer is provided by switching the second reactive gas back to the first reactive gas.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: August 20, 2019
    Assignee: International Business Machines Corporation
    Inventors: Praneet Adusumilli, Alexander Reznicek, Oscar van der Straten
  • Patent number: 10359609
    Abstract: A spacer wafer for a wafer-level camera, a wafer-level camera including the spacer wafer and a method of manufacturing a spacer wafer include a layer of photoresist being formed over a substrate, the layer of photoresist being exposed to radiation through a mask that defines a spacer geometry for at least one wafer-level camera element. The layer photoresist is developed, such that the layer of photoresist is the spacer wafer for the wafer-level camera.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: July 23, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: George Barnes, Goran Rauker
  • Patent number: 10354950
    Abstract: A magnetic polymer for use in microelectronic fabrication includes a polymer matrix and a plurality of ferromagnetic particles disposed in the polymer matrix. The magnetic polymer can be part of an insulation layer in an inductor formed in one or more backend wiring layers of an integrated device. The magnetic polymer can also be in the form of a magnetic epoxy layer for mounting contacts of the integrated device to a package substrate.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: July 16, 2019
    Assignee: Ferric Inc.
    Inventors: Noah Sturcken, Ryan Davies
  • Patent number: 10340178
    Abstract: A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: July 2, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Hau Shiu, Chung-Chi Ko, Tze-Liang Lee, Wen-Kuo Hsieh, Yu-Yun Peng
  • Patent number: 10317791
    Abstract: A photomask blank includes a substrate, a phase shifting layer disposed on the substrate, a first light blocking layer disposed on the phase shifting layer, a first resist layer disposed on the first light blocking layer, a second light blocking layer disposed on the first resist layer, and a second resist layer disposed on the second light blocking layer.
    Type: Grant
    Filed: March 8, 2016
    Date of Patent: June 11, 2019
    Assignee: SK hynix Inc.
    Inventor: Dong Sik Jang
  • Patent number: 10312298
    Abstract: Disclosed are an organic light emitting display, which may achieve weight reduction and slimming, and a method of fabricating the same. An encapsulation part of the organic light emitting display includes a plurality of inorganic encapsulation layers and at least one organic encapsulation layer disposed between the inorganic encapsulation layers, and a plurality of touch electrodes disposed on one of the inorganic encapsulation layers and the at least one organic encapsulation layer of the encapsulation part, each touch electrode having electrically independent self capacitance, thereby achieving weight reduction and slimming of the organic light emitting display.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: June 4, 2019
    Assignee: LG Display Co., Ltd.
    Inventor: Jae-Young Oh
  • Patent number: 10296703
    Abstract: The present disclosure relates to a system and method for visualization of fixing of design rule violations in an electronic circuit design. Embodiments may include displaying at a graphical user interface at least a portion of an electronic design having at least one shape associated therewith and identifying one or more electronic design rules associated with the at least one shape. In response to identifying, embodiments may include determining a proposed shape based upon, at least in part, the one or more electronic design rules associated with the at least one shape, wherein the proposed shape is at least one of a trim shape, a bridge shape, and a patch shape and displaying the proposed shape at the graphical user interface.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: May 21, 2019
    Assignee: Cadence Design Systems, Inc.
    Inventors: Pardeep Juneja, Jean-Marc Bourguet, Joyjeet Bose, Sachin Shrivastava, Yashu Gupta, Ankur Chaplot
  • Patent number: 10287455
    Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: May 14, 2019
    Assignees: DOW GLOBAL TECHNOLOGIES LLC, ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Jieqian Zhang, Phillip D. Hustad, Peter Trefonas, III, Mingqi Li, Valeriy V. Ginzburg, Jeffrey D. Weinhold
  • Patent number: 10274817
    Abstract: A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 ?m2 to 60000 ?m2. The second pattern has an area of 0.16 ?m2 to 60000 ?m2. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Hung Lai, Chih-Chung Huang, Chih-Chiang Tu, Chung-Hung Lin, Chi-Ming Tsai, Ming-Ho Tsai