Abstract: A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.

Abstract: A method for photoresist-free photolithography to pattern a surface of conductor or semiconductor substrate and deposit a material includes surface cleaning and irradiating a surface through a mask with VUV photons from a lamp. Photons are generated with a VUV lamp having a wavelength of 160 nm-200 nm and with an intensity sufficient to alter the surface. The photons are directed through a mask pattern to alter the surface chemistry or structure in those areas of the substrate defined by the mask. Material is selectively deposited onto the surface, in those portions of the surface that are exposed to the VUV photons, or unexposed to the VUV photons, depending on the substrate surface. A method uses a seed film and then electroplates metal onto the seed film in the mask pattern. A method provides for electroless deposition of metal and another for altering surface chemistry in the mask pattern.

Abstract: A resist composition containing a silicon-containing resin, an acid generator component which generates an acid upon exposure, and a photodecomposable base which controls diffusion of the acid generated from the acid generator component upon exposure, in which the silicon content proportion in the silicon-containing resin is in a range of 20% to 25% with respect to a total amount of all atoms constituting the silicon-containing resin.

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

Abstract: A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

Abstract: A deposition apparatus includes a chamber, a mask assembly disposed in the chamber and including an open sheet including a first area in which a first deposition hole is defined and a second area in which a second deposition hole spaced apart from the first deposition hole is defined, a first mask including multiple deposition openings that overlap the first area, and a second mask including multiple deposition openings that overlap the second area, a deposition substrate disposed on the mask assembly, and a deposition source spraying a deposition material to the mask assembly.

Abstract: A method for manufacturing a semiconductor device includes forming one or more work function layers over a semiconductor structure. The method includes forming a hardmask layer over the one or more work function layers. The method includes forming an adhesion layer over the hardmask layer. The method includes removing a first portion of a patternable layer that is disposed over the hardmask layer. The adhesion layer comprises an organic acid that concurrently bonds metal atoms of the hardmask layer and phenol groups of the patternable layer, thereby preventing an etchant from penetrating into a second portion of the patternable layer that still remains over the hardmask layer.

Abstract: A scale includes a substrate, a metal layer of Ni formed on one principal surface of the substrate, and a scale grating formed on the metal layer. A plurality of gratings of Cr are disposed at a predetermined interval in the scale grating.

Abstract: A method for building an etching-free hybrid nonlinear waveguide composed of a polymer and an ion-implanted nonlinear crystal is provided. A nonlinear crystal is pretreated, and subjected to ion implantation to obtain an ion-implanted nonlinear crystal. The ion-implanted nonlinear crystal is spin-coated with a photoresist, and subjected to electron beam exposure, heating, and developing, so as to obtain a hybrid optical waveguide composed of a polymer and a nonlinear crystal.

Abstract: The present disclosure relates to an apparatus, system, and method for a microelectromechanical (MEM) device formed on a transparent, insulating substrate. The MEM device may take the form of an electrostatic comb actuator. The fabrication process employs three-dimensional structuring of the substrate to form the actuator combs, biasing elements, and linkages. The combs and other elements of the actuator may be rendered electrically conducting by a conformal conductive coating. The conductive coating may be segmented into a plurality of electrodes without the use of standard lithography techniques. A linear-rotational actuator is provided, which may comprise two perpendicularly-arranged, linear actuators that utilize moveable linkage beams in two orthogonal dimensions. A linear or torsional ratcheting actuator is also provided by using comb actuators in conjunction with a ratcheting wheel or cog. Furthermore, several methods for electrically connecting non-contiguous or enclosed elements are provided.

Abstract: Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

Abstract: In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

Abstract: A display device includes a substrate, a plurality of pixels arrayed on the substrate, an inorganic light-emitting element provided to each of the pixels, an anode electrode electrically coupled to the inorganic light-emitting element, a transistor provided on a first surface of the substrate, and coupling wiring that couples the anode electrode and the transistor. The anode electrode protrudes from an inside to an outside of the inorganic light-emitting element in planar view from a normal direction of the substrate.

Abstract: The disclosure relates to a method for tuning stress transitions of films on a substrate. The method includes forming a stress-adjustment layer on the substrate, wherein the stress-adjustment layer includes first regions formed of a first material and second regions formed of a second material, wherein the first material includes a first internal stress and the second material includes a second internal stress, and wherein the first internal stress is different compared to the second internal stress; and forming transition regions between the first regions and the second regions, wherein the transition regions include an interface between the first material and the second material that has a predetermined slope that is greater than zero degrees and less than 90 degrees.

Abstract: An imprinting photomask including: a transparent substrate; a light blocking pattern provided on the transparent substrate; and a dry film resist (DFR) pattern provided on the light blocking pattern.

Abstract: A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.

Abstract: A multi-layer lens is disclosed which includes a plurality of dual-layer structures staked on top of one-another, wherein each dual-layer Ri of the plurality of dual-layers includes i) a first curable material having a height of ZLi cured at a predetermined curing level CA, and ii) a second curable material having a height of Zgi cured at a predetermined curing level CB.

Abstract: Methods of making metal patterns on flexible substrates are provided. Releasable solid layer is selectively formed on a patterned surface of the flexible substrate by applying a liquid solution thereon. Metal patterns on the flexible substrate can be formed by removing the releasable solid layer after metallization. In some cases, the releasable solid layer can be transferred from the patterned surface to a transfer layer where the metal patterns are formed.

Abstract: Etchant solutions, pretreatment and methods for etching electroless nickel on metallic materials are provided herein. More specifically, etchant solutions for selectively removing electroless nickel from the surface of metallic materials containing copper, and optionally as containing stainless steel, methods of etching and pretreatment are provided.

Abstract: A method of fabricating a blazed diffraction grating comprises providing a master template substrate and imprinting periodically repeating lines on the master template substrate in a plurality of master template regions. The periodically repeating lines in different ones of the master template regions extend in different directions. The method additionally comprises using at least one of the master template regions as a master template to imprint at least one blazed diffraction grating pattern on a grating substrate.

Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

Abstract: A chemically amplified photosensitive composition used for forming a patterned resist film by photolithography on a metal surface of a substrate which at least partly has a surface consisting of metal. The composition includes an acid generator which generates an acid by irradiation of active rays or radioactive rays; and a compound and/or a precursor compound, in which the molar absorption coefficient ? at a wavelength of 365 nm of the compound is at least 3000, the compound has a metal coordination group, and the compound can be formed from the precursor compound during formation of the patterned resist film.

Abstract: Introduced here are carrier tape assemblies that can improve efficiency and reduce costs when utilized in the handling, transport, or storage of semiconductor components. A carrier tape assembly can include an adhesive film affixed to an elongated and/or extruded carrier tape. For example, the adhesive film may be integrally laminated onto the top surface of the elongate carrier tape as a single continuous (i.e., unbroken) sheet. The adhesive film may substantially conform to the top surface of the elongate carrier tape, including any punched cavities for holding semiconductor components. Proper securement of the semiconductor components to the carrier tape assembly depends on the adhesive property of the constituent material(s) of the adhesive film.

Abstract: Electromagnetic bandgap isolation systems and methods are provided. In one example, an electromagnetic bandgap isolator device includes a base support having a curved surface. The electromagnetic bandgap isolator device further includes a metamaterial. The metamaterial includes a continuous curved layer in contact with the base support. The metamaterial is configured to absorb energy associated with a frequency range. Related systems and methods are also provided.

Abstract: Embodiments of the present disclosure provide for methods of making substrates having an (AR) antireflective layer, substrates having an antireflective layer, devices including a substrate having an antireflective layer, and the like. The AR layer can have a total specular reflection of less than 10% at a wavelength of about 400-800 nm, and a height of about 500-1000 nm.

Abstract: A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone.

Abstract: The disclosure relates to a high-density optical waveguide structure, a printed circuit board and a preparation method thereof. The high-density optical waveguide structure comprises an undercladding layer, a core layer and an upper cladding layer in sequence; wherein, the lower cladding layer is arranged at intervals. The trench is filled with an optical waveguide material to form a core layer. The waveguide structure integrates an optical waveguide into a PCB to realize photoelectric interconnection. The waveguide structure can better achieve higher parallel interconnection density, maintain good signal integrity, reduce device and device size, and at the same time, consume less power. The structure is configured to easily dissipate heat, enabling a simpler physical architecture and design, maximizing the wiring space of printed circuit boards, facilitating the fabrication of ultra-fine wire boards; and improving the wiring density and reliability of existing manufacturing methods.

Abstract: The present disclosure provides chips, devices and methods for sequencing a biomolecule. The biomolecule may be DNA, RNA. a protein, or a peptide. The chip comprises a substrate; a first and second fluid chamber; fluid channels connecting the first and second fluid chamber; a first and second electrode disposed on opposing sides of the central fluid channel and having a nanogap therebetween, wherein the width of the nanogap is modulated by confined electrochemical deposition; and a passivation layer disposed on top of the first and second electrodes and the fluid channel.

Abstract: Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.

Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The method includes exposing a portion of the resist layer. The resist layer includes a photoacid generator (PAG) group, a quencher group, an acid-labile group (ALG) and a polar unit (PU). The method also includes performing a baking process on the resist layer and developing the resist layer to form a patterned resist layer. The method further includes doping a portion of the material layer by using the patterned resist layer as a mask to form a doped region. In addition, the method includes removing the patterned resist layer.

Abstract: A method of manufacturing a metal mask includes providing a growth substrate with a conductive surface. Then, a cover pattern is formed on the conductive surface, which has at least one opening and an insulated surface touching the conductive surface. Next, using the cover pattern as a mask, a first electroforming is performed to form a mold part on the conductive surface. The mold part fills the opening and has a conductive pattern surface touching the conductive surface. The conductive pattern surface is flush with the insulated surface. After the first electroforming, the growth substrate is removed, while the cover pattern and the mold part are reserved. After removing the growth substrate, a second electroforming is performed to the conductive pattern surface of the mold part to form a metal pattern. Afterwards, the mold part and the cover pattern are removed from the metal pattern.

Abstract: A metallic stamp and die for the craft industry comprises a predetermined acid-etched design on a surface of a metallic plate. A first layer of a metallic paint is applied over the front and back surfaces of the metallic stamp and die. A second layer of a rubber paint is applied over the metallic paint. The metallic paint facilitates bonding of the rubber paint to the metallic plate and increases the life of the coating of the rubber paint. The rubber paint is configured to absorb and store an ink and facilitate transfer of the ink to one or more substrates, thus enabling stamping of the design on the substrate. The metallic die can be configured for a plurality of uses, such as embossing, cutting, heat-foiling, stamping, scoring, and inserting patterns or designs in a plurality of substrates.

Abstract: A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a plurality of patterning structures over a device layer, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface, and forming a mask by depositing a masking material at a non-zero angle of inclination relative to a perpendicular to a plane defined by a top surface of the device layer. The mask may be formed over the plurality of patterning structures without being formed along the second sidewall. The method may further include selectively forming a metal layer along the second sidewall of each of the plurality of patterning structures.

Abstract: In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

Abstract: A semiconductor device includes a substrate, a conductive layer, a nitride mask layer, a carbon mask layer and an anti-reflective coating stack. The conductive layer is disposed on the substrate. The nitride mask layer is disposed on the conductive layer, wherein the nitride mask layer has a first stress. The carbon mask layer is disposed on the nitride mask layer, wherein the carbon mask layer has a second stress and a difference between the second stress and the first stress is smaller than 200 MPa. The anti-reflective coating stack is disposed on the carbon mask layer.

Abstract: A photosensitive resin composition includes electrically conductive particles (A) whose surfaces are coated with a carbon simple substance and/or a carbon compound; an alkali-soluble resin (B) containing an acid-dissociation group; and a metal chelate compound (C) wherein the metal chelate compound (C) includes at least one selected from the group consisting of Au, Ag, Cu, Cr, Fe, Co, Ni, Bi, Pb, Zn, Pd, Pt, Al, Ti, Zr, W and Mo.

Abstract: An organic light-emitting diode (OLED) display panel and a mask are disclosed. The OLED display panel includes a first film layer, and a second film layer disposed on the first film layer and made of an organic material. The second film layer includes an edge slope corner formed at an acute angle less than a predetermined value. Since the edge slope corner of the second film layer is formed at the acute angle less than a predetermined value, a technical problem existing in conventional OLED display panels that edge slope corners of organic layers are formed at approximately a right angle can be mitigated.

Abstract: Embodiments enhance graphic capabilities in projected-capacitive (PCAP) touch sensitive systems, and more specifically to a border component of a PCAP touchscreen. Embodiments include a method and an apparatus for a PCAP touchscreen layered structure. Some embodiments include screen printing a border component on a cover sheet, curing the border component, ablating a pattern on the border component, and screen printing one colored ink onto the pattern on the border component. In some embodiments the border layer is black, and the colored ink is coupled to a cover sheet. The pattern causes the colored ink to appear as a continuous gradient of the colored ink. In some embodiments the border component includes two or more border-layer components. At least one of the border-layer components may include an ablated pattern. Each ablated pattern may be coupled to a different colored ink.

Abstract: An additional non-photoresist layer may be formed on patterned photoresist layers. The additional layer may be preferentially formed on the tops of the photoresist layer versus the sidewalls of the photoresist layer. In addition, the additional layer may be preferential formed on the tops of the photoresist layer versus exposed surfaces of layers underlying the photoresist layer. In this manner, the patterned structures formed by the photoresist layer are less likely to have line opens due to photoresist height variability or the relative thinness of the photoresist height used. Further, the formation of the additional layer may be through a cyclic deposition/trim process. The trim step of the cyclic process may also serve as a descum step that helps reduce line bridging and scumming. In one embodiment, the additional non-photoresist layer may be an organic polymer layer.

Abstract: Micro- and nano-patterns in imprint layers formed on a substrate and lithographic methods for forming such layers. The layers include a plurality of structures, and a residual layer having a residual layer thickness (RLT) that extends from the surface of the substrate to a base of the structures, where the RLT varies across the surface of the substrate according to a predefined pattern.

Abstract: A compound represented by formula I, a negative liquid crystal composition comprising such a compound, and a liquid crystal display element or liquid crystal display comprising the compound or liquid crystal composition are provided. The compound represented by formula I contains two hydroxy groups. In an ODF process for a panel, due to an intermolecular force between the hydroxyl groups and the surface of the panel (a glass surface or an ITO electrode surface), the compound is spontaneously aligned, in a standing manner, on the panel glass or transparent ITO electrode substrate, causing liquid crystal molecules similar to the compound represented by formula ITO be vertically aligned, and UV light irradiation, a polymer layer with a rough surface is formed on the substrate by means of polymerization, and achieves the effects of PI insulation and vertical alignment of the liquid crystal molecules.

Abstract: An imprint mold and a method for manufacturing the same are provided. The imprint mold includes a plurality of substantially identical or different mold patterns, wherein there isn't any height difference between the mold patterns.

Abstract: A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer.

Abstract: A cluster tool includes a polyhedral transfer chamber, at least one processing chamber, at least one load lock chamber, and an electron beam (e-beam) source. The processing chamber is connected to the polyhedral transfer chamber. The processing chamber is configured to perform a manufacturing procedure to a wafer present therein. The load lock chamber is connected to the polyhedral transfer chamber. The e-beam source is configured to performing an e-beam treatment to the wafer after the wafer is performed the manufacturing procedure.

Abstract: A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

Abstract: A semiconductor device includes a substrate and a graphene layer. The substrate includes an insulator and a semiconductor. The graphene layer is grown on a surface of the semiconductor. The semiconductor includes at least one of a group IV material and a group III-V compound. A method of manufacturing the semiconductor device is disclosed.

Abstract: The present disclosure relates to a method for manufacturing decorative panels made of flat glass for electronic household appliances, in particular household appliances that are fixed in position. The method comprises, in the specified order, at least the steps of providing a flat glass, producing a blank decorative panel by forming the provided flat glass with at least one of the steps of forming the outer contour of the decorative panel, edge treatment, or making at least one indentation on the operational front, the thermal tempering of the produced blank decorative panel, and applying at least one decorative print on the operational back of the thermally tempered blank decorative panel by means of a digital printing method.