Including Etching Substrate Patents (Class 430/323)
  • Patent number: 10773542
    Abstract: The present disclosure relates to a method for manufacturing decorative panels made of flat glass for electronic household appliances, in particular household appliances that are fixed in position. The method comprises, in the specified order, at least the steps of providing a flat glass, producing a blank decorative panel by forming the provided flat glass with at least one of the steps of forming the outer contour of the decorative panel, edge treatment, or making at least one indentation on the operational front, the thermal tempering of the produced blank decorative panel, and applying at least one decorative print on the operational back of the thermally tempered blank decorative panel by means of a digital printing method.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: September 15, 2020
    Assignees: Schott Gemtron Corp., Schott AG
    Inventors: Adam O'Ryan, Carsten Schwabe, Grant Mason
  • Patent number: 10658179
    Abstract: Aspects of the disclosure provide a method. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. Then, the method includes forming a mask layer over the spacer layer. The mask layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. Further, the method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer with a dry etching process using the third layer as an etch mask to form an opening that exposes a portion of the spacer layer. Then, the method includes removing the second layer using a wet etchant before a formation of a backfill material layer in the opening and over the first layer.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: May 19, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Nai-Chia Chen, Wan Hsuan Hsu, Chia-Wei Wu, Neng-Jye Yang, Chun-Li Chou
  • Patent number: 10625289
    Abstract: A mask and a method of manufacturing a mask assembly, the mask including a body, and the body including one end and another end facing each other in a length direction and having a first surface and a second surface facing each other in a thickness direction; and a pattern region between the one end and the other end, the pattern region including a plurality of pattern holes and a plurality of ribs between the plurality of pattern holes, wherein a curl value of the mask, which is defined as a shortest distance from a plane tangent to a center of the body to the one end or the other end of the body, is 1,000 ?m to 4,000 ?m.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: April 21, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Su Cheol Gong, Min Goo Kang, Taek Kyo Kang, Jung Woo Ko, Min Ju Kim, Young Eun Ryu, Jae Suk Moon, Soo Hyun Min
  • Patent number: 10613438
    Abstract: Lithographic patterning methods are provided which implement directed self-assembly (DSA) of block copolymers to enable self-aligned cutting of features. A first layer and second layer of material are formed on a substrate. The second layer of material is lithographically patterning to form a guiding pattern. A DSA process is performed to form a block copolymer pattern around the guiding pattern, which comprises a repeating block chain that includes at least a first block material and a second block material, which have etch selectivity with respect to each other. A selective etch process is performed to selectively etching one of the first block material and the second block material to form self-aligned openings in the block copolymer pattern which expose portions of the first layer of material. The first layer of material is patterned by etching the exposed portions of the first layer of material.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: April 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Sean D. Burns, Sivananda K Kanakasabapathy, Kafai Lai, Chi-Chun Liu, Kristin Schmidt, Ankit Vora
  • Patent number: 10581003
    Abstract: Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: March 3, 2020
    Assignee: The Board of Trustee of the Leland Stanford Junior Universtiy
    Inventors: Nicholas Alexander Melosh, Matt R. Angle, Mina-elraheb S. Hanna, Yifan Kong
  • Patent number: 10453812
    Abstract: Techniques that can assist with fabricating a semiconductor package that includes a zero misalignment-via (ZMV) and/or a trace formed using a polarization process are described. The disclosed techniques can result in creation of ZMVs and/or traces between the ZMVs using a process comprising application of polarized light to one or more resist layers (e.g., a photoresist layer, etc.). One embodiment of a technique includes modulating an intensity of light applied to one or more resist layers by interaction of a light source with a photomask and at least one polarizer such that one or more patterns are created on the one or more resist layers. One embodiment of another technique includes creating patterns on one or more resist layers with different types of polarized light formed from a photomask and at least one polarizer. The disclosed techniques can assist with reducing manufacturing costs, reducing development time, and increasing I/O density.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: October 22, 2019
    Assignee: Intel Corporation
    Inventors: Hiroki Tanaka, Aleksandar Aleksov, Sri Ranga Sai Boyapati, Robert A. May, Kristof Darmawikarta
  • Patent number: 10438797
    Abstract: Techniques herein include an etch process that etches a layer of material incrementally, similar to mono-layer etching of atomic layer etching (ALE), but not necessarily including self-limiting, mono-layer action of ALE. Such techniques can be considered as quasi-atomic layer etching (Q-ALE). Techniques herein are beneficial to precision etching applications such as during soft-mask open. Techniques herein enable precise transfer of a given mask pattern into an underlying layer. By carefully controlling the polymer deposition relative to polymer assisted etching through its temporal cycle, a very thin layer of conformal polymer can be activated and used to precisely etch and transfer the desired patterns.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: October 8, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Hongyun Cottle, Andrew W. Metz
  • Patent number: 10409164
    Abstract: A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: September 10, 2019
    Assignee: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Yoshimichi Mitamura, Takuto Nakata
  • Patent number: 10395899
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: August 27, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Ryuichi Saito, Seiji Morita, Ryosuke Yamamoto
  • Patent number: 10381423
    Abstract: A mask frame assembly for an electronic display device includes a frame, and a mask coupled to the frame, in which the mask includes a pattern hole defining a first area over which material may be deposited, and a dam surrounding the pattern hole and defining a second area smaller than the first area over which the material may be deposited. A method of manufacturing a mask frame assembly for an electronic display device is also disclosed.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: August 13, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventor: Sungwoo Jung
  • Patent number: 10372039
    Abstract: A resist underlayer film forming composition for lithography for a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, including: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole, R1aR2bSi(R3)4?(a+b)??Formula (1) R4a1R5b1Si(R6)4?(a1+b1)??Formula (2).
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: August 6, 2019
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yuta Kanno, Makoto Nakajima, Satoshi Takeda, Hiroyuki Wakayama
  • Patent number: 10323159
    Abstract: An organic layer composition includes a first compound having a thermal shrinkage ratio of about 10% to about 70%, a second compound having a smaller thermal shrinkage ratio than the first compound, and a solvent, and an organic layer obtained by curing the organic layer composition and a method of forming patterns using the organic layer composition are disclosed. A method of measuring the thermal shrinkage ratio is described in the detailed description.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: June 18, 2019
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Minsoo Kim, Younhee Nam, Jaeyeol Baek, Hyunji Song, Byeri Yoon, Seulgi Jeong, Seunghee Hong, Sunmin Hwang
  • Patent number: 10266471
    Abstract: A phenolic hydroxyl-containing compound is provided. The compound dissolves well in solvents and can be formulated into compositions that give coatings superior in thermal decomposition resistance, alkali developability, resolution, and dry-etch resistance. Specifically, the compound is a phenolic hydroxyl-containing calixarene represented by structural formula (1): (where A is a structural unit including a dihydroxynaphthalene- or naphthol-derived structure optionally with a substituent alkyl, alkoxy, aryl, or aralkyl group or halogen atom on the aromatic rings and a methylene group optionally having an alkyl or aryl group in place of one of the hydrogen atoms) and obtained using a dihydroxynaphthalene in combination with a naphthol, with the total repeat number p being an integer of 2 to 10.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: April 23, 2019
    Assignee: DIC Corporation
    Inventors: Tomoyuki Imada, Norio Nagae
  • Patent number: 10170591
    Abstract: A method for fabricating a semiconductor device comprises forming a first hardmask, a planarizing layer, and a second hardmask on a substrate. Removing portions of the second hardmask and forming alternating blocks of a first material and a second material over the second hardmask. The blocks of the second material are removed to expose portions of the planarizing layer. Exposed portions of the planarizing layer and the first hardmask are removed to expose portions of the first hardmask. Portions of the first hardmask and portions of the substrate are removed to form a first fin and a second fin. Portions of the substrate are removed to further increase the height of the first fin and substantially remove the second fin. A gate stack is formed over a channel region of the first fin.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 1, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Cheng Chi, Fee Li Lie, Chi-Chun Liu, Ruilong Xie
  • Patent number: 10161567
    Abstract: A method of and apparatus for controlling pressure in a process chamber having a continuous gas inlet flow and a continuous gas outlet flow comprising providing a pulsed valve at a gas outlet, a pressure gauge, and a programmable controller and varying the pulse rate of the pulsed valve, wherein either the open time or closed time, or both open and closed times, is lengthened or shortened, depending on whether the gauge pressure is above or below the programmed setpoint.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: December 25, 2018
    Assignee: SPTS Technologies Limited
    Inventor: Daniel J. Vestyck
  • Patent number: 10114291
    Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; and selectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: October 30, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Chih Chen, Chun-Kuang Chen, Siao-Shan Wang, Wei-Liang Lin
  • Patent number: 10082735
    Abstract: A resist underlayer film-forming composition for lithography having an aliphatic polycyclic structure including, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a combination thereof, in which the aliphatic polycyclic structure is a structure which a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) (where R1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3) has, or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, each optionally having a double bond, a hydroxy group, or an epoxy group.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: September 25, 2018
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Wataru Shibayama, Shuhei Shigaki, Makoto Nakajima, Satoshi Takeda, Hiroyuki Wakayama, Rikimaru Sakamoto
  • Patent number: 10068768
    Abstract: Provided is a semiconductor device. The device includes a plurality of line patterns, which extend in a first direction and are arranged a first space apart from one another in a second direction perpendicular to the first direction. The line patterns include a line pattern set including two sub-line patterns that are arranged the first space apart from each other in the second direction and have a first width of a minimum feature size (1F) in the second direction, and a wide-width line pattern that is arranged the first space apart from one side of the line pattern set in the second direction and has a second width larger than the first width in the second direction.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: September 4, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-wook Oh, Jong-hyun Lee
  • Patent number: 10062674
    Abstract: Embodiments are related to scalable surface structure (e.g., a well or other structure) formation in a substrate and, more particularly, to systems and methods for forming displays using a photo-machinable material layer.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: August 28, 2018
    Assignee: Corning Incorporated
    Inventors: Adam James Ellison, Sean Matthew Garner, Timothy James Kiczenski, Michelle Diane Pierson-Stull
  • Patent number: 10007183
    Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: June 26, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro Tachibana, Daisuke Kori, Tsutomu Ogihara, Takeru Watanabe, Kazumi Noda, Toshiharu Yano
  • Patent number: 9957339
    Abstract: A copolymer is prepared by the polymerization of monomers that include an ultraviolet absorbing monomer, and a base-solubility-enhancing monomer. The copolymer is useful for forming a topcoat layer for electron beam and extreme ultraviolet lithographies. Also described are a layered article including the topcoat layer, and an associated method of forming an electronic device.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: May 1, 2018
    Assignees: ROHM AND HAAS ELECTRONIC MATERIALS LLC, THE UNIVERSITY OF QUEENSLAND
    Inventors: James W. Thackeray, Ke Du, Peter Trefonas, III, Idriss Blakey, Andrew Keith Whittaker
  • Patent number: 9908831
    Abstract: A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
    Type: Grant
    Filed: January 19, 2016
    Date of Patent: March 6, 2018
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Masatoshi Echigo, Masako Yamakawa
  • Patent number: 9899220
    Abstract: A method for patterning a substrate is disclosed. The method includes applying a first directed self-assembly (DSA) patterning process that defines a first patterned layer on top of the substrate. The pattern of the first patterned layer is to be transferred into the substrate. The method also includes applying a planarizing layer on top of the first patterned layer. The method further includes applying a second DSA patterning process that defines a second patterned layer on top of the planarizing layer, thereby not patterning the planarizing layer. A pattern of the second patterned layer is to be transferred into the substrate. Projections of the pattern of the second patterned layer and the pattern of the first patterned layer on the substrate have no overlap. Additionally, the method includes transferring the patterns defined by the first patterned layer and the second patterned layer into the substrate.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: February 20, 2018
    Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D
    Inventors: Boon Teik Chan, Zheng Tao, Arjun Singh, Jan Doise
  • Patent number: 9824916
    Abstract: A method of forming a mask layout includes forming a layout of a first mask including a lower wiring structure pattern and a dummy lower wiring structure pattern. A layout of a second mask overlapping the first mask and including an upper wiring structure pattern and a dummy upper wiring structure pattern is formed. A layout of a third mask including a first via structure pattern and a first dummy via structure pattern is formed. A layout of a fourth mask including a second via structure pattern and a second dummy via structure pattern is formed. The second via structure pattern may commonly overlap the lower wiring structure pattern and the upper wiring structure pattern, and the second dummy via structure pattern may commonly overlap the dummy lower wiring structure pattern and the dummy upper wiring structure pattern. The fourth mask may overlap the third mask.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: November 21, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-Wook Oh, Jong-Hyun Lee, Sung-Wook Hwang
  • Patent number: 9786511
    Abstract: A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: October 10, 2017
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Seth B. Darling, Jeffrey W. Elam, Yu-Chih Tseng, Qing Peng
  • Patent number: 9768022
    Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes providing a substrate, forming a crosslinked layer over the substrate, wherein the crosslinked layer is in contact with the substrate, forming a patterned layer over the crosslinked layer, forming a pattern in the crosslinked layer and further in the substrate by using the patterned layer as a mask, treating the crosslinked layer by using a radiation source to transition the crosslinked layer to a de-crosslinked layer with a reduced molecular weight, and removing the de-crosslinked layer by using a solution that is not subject to cause damage on the substrate.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: September 19, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Huei Weng, Chen-Yu Liu, Ching-Yu Chang
  • Patent number: 9726977
    Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: August 8, 2017
    Assignee: GlobalFoundries Inc.
    Inventors: James F. Cameron, Jin Wuk Sung, John P. Amara, Greogory P. Prokopowicz, David A. Valeri, Libor Vyklicky, Wu-Song S. Huang, Wenjie Li, Pushkara R. Varanasi, Irene Y. Popova
  • Patent number: 9721808
    Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a stopper layer on a target layer including a cell area and an edge area, forming a hard mask including first upper openings and dam trench on the stopper layer, forming opening spacers on inner walls of the first upper openings and a dam pattern in the dam trench, removing the stopper layer exposed in the first upper openings to form first lower openings, forming pillar patterns in the first lower openings and the first upper openings and an eaves pattern on the dam pattern, removing the hard mask in the cell area, forming a first polymer block between the pillar patterns including second upper openings, etching the stopper layer exposed in the second upper openings to form second lower openings, and removing the first polymer block, the pillar patterns, the dam pattern and the eaves pattern.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: August 1, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-Yong Kang, Eunsung Kim, Byungjun Jeon, Joonsoo Park, Soonmok Ha
  • Patent number: 9697931
    Abstract: Provided are a method of preparing a large-area, three-dimensional graphene transparent electrode using an electrospray deposition method and a large-area, three-dimensional graphene transparent electrode prepared therefrom. More particularly, the present invention is related to a method of preparing a large-area, three-dimensional graphene transparent electrode using an electrospray deposition method, which may easily prepare a large-area graphene transparent electrode having high transparency and conductivity through an electrospray process and may obtain effects, which may not be realized in a two-dimensional transparent electrode prepared by a typical method such as CVD, due to a three-dimensional stack structure in which graphene is arranged perpendicular to a substrate, and a large-area, three-dimensional graphene transparent electrode prepared therefrom.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: July 4, 2017
    Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
    Inventors: Hoon Huh, Woo Sik Kim, Hui Jin Kim, Eun Sung Yoo, Suk Hoon Choi, Ji Young Hwang, Jee Young Jang, Tae Il Kim
  • Patent number: 9665003
    Abstract: A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,
    Type: Grant
    Filed: April 28, 2014
    Date of Patent: May 30, 2017
    Assignee: Cheil Industries, Inc.
    Inventors: Yoo-Jeong Choi, Yun-Jun Kim, Go-Un Kim, Young-Min Kim, Hea-Jung Kim, Joon-Young Moon, Yo-Choul Park, Yu-Shin Park, You-Jung Park, Hyun-Ji Song, Seung-Wook Shin, Yong-Woon Yoon, Chung-Heon Lee, Seung-Hee Hong
  • Patent number: 9570349
    Abstract: A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: February 14, 2017
    Assignee: Intel Corporation
    Inventors: Robert L. Bristol, Rami Hourani, Eungnak Han, James M. Blackwell
  • Patent number: 9551925
    Abstract: A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: January 24, 2017
    Assignee: S&S TECH CO., LTD
    Inventors: Kee-Soo Nam, Chul-Kyu Yang, Geung-Won Kang, Cheol Shin, Jong-Hwa Lee, Min-Ki Choi, Chang-Jun Kim, Kyu-Jin Jang
  • Patent number: 9530660
    Abstract: Disclosed is a method of forming a target pattern for a semiconductor device using multiple directed self-assembly (DSA) patterning processes. The method includes receiving a substrate and forming a guide pattern over the substrate by performing a process that includes a first DSA process. The method further includes performing a second DSA process over the substrate using the guide pattern. In an embodiment, the first DSA process controls the first pitch of a dense pattern in a first direction and the second DSA process controls the second pitch of the dense pattern in a second direction.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chin-Yuan Tseng, Chi-Cheng Hung, Chun-Kuang Chen, Kuan-Hsin Lo, Ru-Gun Liu, Tsai-Sheng Gau, Wei-Liang Lin
  • Patent number: 9529257
    Abstract: Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.
    Type: Grant
    Filed: September 2, 2013
    Date of Patent: December 27, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Chul-Ho Lee, You-Jung Park, Yong-Woon Yoon, Sung-Jae Lee, Youn-Jin Cho, Young-Min Kim, Chung-Heon Lee
  • Patent number: 9508560
    Abstract: A method that allows effective removal of a silicon-containing antireflective coating (SiARC) layer in a block mask after defining an unblock area in a sidewall image transfer (SIT) patterning process without causing a height loss of the SIT spacers is provided. The method includes first modifying the SiARC layer with a dry etch utilizing an etching gas comprising a nitrogen gas followed by treating the modified SiARC layer with a wet chemical etch utilizing an aqueous solution including dilute hydrofluoric acid and citric acid.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: November 29, 2016
    Assignee: International Business Machines Corporation
    Inventors: Yann Mignot, Brown C. Peethala, Shariq Siddiqui
  • Patent number: 9418888
    Abstract: A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: August 16, 2016
    Assignee: Intel Corporation
    Inventors: Robert L. Bristol, Rami Hourani, Eungnak Han, James M. Blackwell
  • Patent number: 9418836
    Abstract: The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with underlayers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: August 16, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Venkata Gopal Reddy Chada, Huirong Yao, Munirathna Padmanaban, JoonYeon Cho, Elizabeth Wolfer, Alberto D. Dioses, Salem K. Mullen
  • Patent number: 9409793
    Abstract: The present invention relates to a novel spin coatable composition comprising (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(?O)—), alkylcarbonyloxy (alkyl-C(?O)—O—), alkyloxycarbonyl (alkyl-O—C(?O)—), alkyloxycarbonyloxy (alkyl-O—C(?O)—O—) and mixtures of these; and a solvent. The present invention further relates to processes using the novel compositions.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: August 9, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Venkata Gopal Reddy Chada, Huirong Yao, Salem Mullen, Elizabeth Wolfer, Alberto D. Dioses, JoonYeon Cho, Munirathna Padmanaban
  • Patent number: 9396966
    Abstract: A patterning method and a patterned material layer are provided. After providing a substrate including a material layer, a hard mask layer including trenches extending in a first direction is formed over the material layer. A filling material layer is formed on the hard mask layer to cover the hard mask layer and fills in the trenches. A mask layer in a grid pattern is formed on the filling material layer. The mask layer includes first grid lines extending in the first direction and second grid lines extending in a second direction, and each of the underlying trench is located between two most adjacent first grid lines. The material layer is etched with the mask layer as an etching mask to form a patterned material layer including a plurality of first holes and a plurality of second holes.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: July 19, 2016
    Assignee: MACRONIX International Co., Ltd.
    Inventor: Chin-Cheng Yang
  • Patent number: 9387567
    Abstract: A cylinder assembly for use in an internal combustion engine is disclosed. The cylinder assembly may include a cylinder, a piston disposed within the cylinder, a plurality of piston rings encircling the piston, and a cylinder liner fitted around the piston in a cylindrical space in which the piston reciprocates. The piston may reciprocate within the cylinder along a longitudinal direction of the cylinder. The cylinder liner may include an upper section, a middle section, and a lower section. The upper section may be composed of a first texture; the middle section may be composed of a second texture that is rougher than the first texture; and the lower section may be composed of a third texture that is smoother than the first texture and the second texture.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: July 12, 2016
    Assignee: Electro-Motive Diesel, Inc.
    Inventors: Edward Cryer, Farhan Ferozali Devani
  • Patent number: 9389511
    Abstract: A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: July 12, 2016
    Assignee: Cornell University
    Inventors: Evan L. Schwartz, Wei Min Chan, Jin-Kyun Lee, Sandip Tiwari, Christopher K. Ober
  • Patent number: 9312220
    Abstract: A circuit device having an interlayer dielectric with pillar-type air gaps and a method of forming the circuit device are disclosed. In an exemplary embodiment, the method comprises receiving a substrate and depositing a first layer over the substrate. A copolymer layer that includes a first constituent polymer and a second constituent polymer is formed over the first layer. The first constituent polymer is selectively removed from the copolymer layer. A first region of the first layer corresponding to the selectively removed first constituent polymer is etched. The etching leaves a second region of the first layer underlying the second constituent polymer unetched. A metallization process is performed on the etched substrate, and the first layer is removed from the second region to form an air gap. The method may further comprise depositing a dielectric material within the etched first region.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: April 12, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih Wei Lu, Chung-Ju Lee, Tien-I Bao
  • Patent number: 9296195
    Abstract: Disclosed is a method for producing a printing stencil for technical printing for applying a printed pattern to a substrate and to a printing stencil. The method includes supplying a carrier layer, supplying a structure layer, said layer being located beneath the carrier layer, making an elongate printed image opening, corresponding to at least part of the printed pattern, in the structure layer, and making carrier layer openings in the region of the printed image opening. The method uses a laser device designed to emit a laser beam in pulses, and includes making a row of carrier layer openings, extending in the longitudinal direction of the printed image opening, wherein, for making a carrier layer opening, a focusing apparatus is positioned near the carrier layer opening, and the carrier layer opening is by means of one or several laser pulses, and the focusing apparatus of the laser device.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: March 29, 2016
    Assignee: CHRISTIAN KOENEN GmbH
    Inventor: Christian Koenen
  • Patent number: 9244351
    Abstract: A composition for a hardmask including copolymer including repeating units represented by Chemical Formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.
    Type: Grant
    Filed: November 23, 2012
    Date of Patent: January 26, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Sung-Jae Lee, Joon-Young Moon, Youn-Jin Cho, Young-Min Kim, Yong-Woon Yoon
  • Patent number: 9207535
    Abstract: The present invention provides a method for producing a resist composition used in a process for producing a semiconductor apparatus, the method including the steps of: cleaning an apparatus for producing the resist composition with a cleaning liquid; applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus for producing the resist composition; repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm2 or less; and producing the resist composition by using the apparatus for producing the resist composition after the step of repeating. There can be provided a method for producing a resist composition capable of producing a resist composition whose coating defects are reduced.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: December 8, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu Ogihara, Yusuke Biyajima, Motoaki Iwabuchi
  • Patent number: 9201301
    Abstract: Provided by the present invention is a method for producing a resist composition, especially a silicon-containing resist underlayer film composition, with fewer film defects, the composition used in immersion exposure, double patterning, development by an organic solvent, and so forth. Specifically, provided is a method for producing a resist composition to be used for manufacturing a semiconductor device, wherein the resist composition is filtered using a filter which filters through 5 mg or less of an eluate per unit surface area (m2) in an extraction using an organic solvent.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: December 1, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu Ogihara, Yusuke Biyajima, Motoaki Iwabuchi, Taku Morisawa
  • Patent number: 9165884
    Abstract: A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: October 20, 2015
    Assignee: SK Hynix Inc.
    Inventors: Mi-Hye Kim, Byung-Sub Nam
  • Patent number: 9152051
    Abstract: The present invention relates to an absorbing hard mask antireflective coating composition comprising a novel polymer, where the novel polymer comprises in the backbone of the polymer four repeat units -A-, -B-, -C- and -D-, where A is repeat unit which comprises a fused aromatic ring in its backbone, B has the structure (1), C is a hydroxylbiphenyl of structure (2) and D is a derivatized fluorene of structure (3), where R1 is C1-C4alkyl, R2 is C1-C4alkyl, R3 and R4 are independently hydrogen or C1-C4 alkyl, and Ar? and Ar? are independently phenylenic, or naphthalenic derived moieties, R5 and R6 are independently —OH or —(CH2)nOH where n=2-4, and R7 and R8 are independently hydrogen or C1-C4 alkyl. This invention also relates to a process for forming an image using the novel antireflective coating composition.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: October 6, 2015
    Assignee: AZ ELECTRONICS MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: M. Dalil Rahman, Clement Anyadiegwu, Douglas McKenzie, Takanori Kudo, Elizabeth Wolfer, Salem K. Mullen
  • Patent number: 9134611
    Abstract: A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. R1 represents a hydroxy group, or the like. n is an integer of 0 to 5. X represents a divalent hydrocarbon group having 1 to 20 carbon atoms or an alkanediyloxy group having 1 to 20 carbon atoms. m is an integer of 1 to 7. A sum of m and n is no greater than 7. R2 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms. R3 represents an alicyclic group having 4 to 20 carbon atoms or an aryl group having 6 to 30 carbon atoms. A part or all of hydrogen atoms included in the alicyclic group or the aryl group represented by R3 are unsubstituted or substituted.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: September 15, 2015
    Assignee: JSR CORPORATION
    Inventors: Shin-ya Nakafuji, Shin-ya Minegishi, Takanori Nakano
  • Patent number: 9116086
    Abstract: A method for depositing a protective layer of material on a localized area on a substrate, such as a pattern of photo resist, includes forming a controlled environment around the substrate and positioning a hollow needle adjacent to the localized area on the substrate. A liquid comprising the material is directed through the hollow needle onto the localized area, so as to deposit a layer of the material on the localized area. The layer of material may act as a Z-contrast forming layer in TEM.
    Type: Grant
    Filed: June 16, 2010
    Date of Patent: August 25, 2015
    Assignee: ASML Netherlands B.V.
    Inventors: Bartolomeus Petrus Rijpers, Jurriaan Hendrik Koenraad Van Schaik