Abstract: The present invention relates to a pattern forming method comprising image-wise forming, on a surface of a substrate, a region having an ability to initiate polymerization, forming a graft polymer on the region by atom transfer radical polymerization, and adhering a substance to the graft polymer. The method can be applied for preparing an image forming material, a fine particle adsorption pattern material, a conductive pattern material, or the like by selecting a suitable substance.

Abstract: An exposure system includes an exposure part for irradiating a resist film formed on a substrate with exposing light through a mask with a liquid provided on the resist film. The system also includes a liquid supply part for supplying the liquid to the exposure part. The liquid supply part includes a plurality of liquid units respectively containing a plurality of liquids, and a selection unit for selecting one liquid unit from the plurality of liquid units and supplying a liquid to the exposure part.

Abstract: A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 mm, high aspect ratio, and a uniform diameter of tip-body.

Abstract: A method of forming a cell identification includes forming a metal layer on a substrate, coating a photoresist material on the metal layer to form a photoresist film, exposing the photoresist film through a mask including a light-blocking pattern corresponding to a cell identification pattern, developing an exposed photoresist film, etching the metal layer using a developed photoresist film to form a metal pattern including the cell identification pattern, and irradiating a laser beam onto a symbol of the cell identification pattern.

Abstract: A mold manufacturing method includes the steps of: disposing a mask layer on a front side and a backside of a first substrate, wherein the first substrate is transparent to a predetermined light source and the mask layer has a top portion and a bottom portion, which are respectively disposed on the front side and the backside and arranged alternately; forming a photoresist layer on the front side of the first substrate; providing the predetermined light source to illuminate the backside of the first substrate so as to expose the photoresist layer to form an exposed portion and an unexposed portion; and removing the unexposed portion to form a patterned structure having trenches and micro-holes arranged alternately; forming a metal layer on the patterned structure of the photoresist layer and the first substrate; and removing the photoresist layer and the first substrate; to remain the metal layer.

Abstract: The present invention provides, in certain embodiments, improved microfluidic systems and methods for fabricating improved microfluidic systems, which contain one or more levels of microfluidic channels. The inventive methods can provide a convenient route to topologically complex and improved microfluidic systems. The microfluidic systems provided according to the invention can include three-dimensionally arrayed networks of fluid flow paths therein including channels that cross over or under other channels of the network without physical intersection at the points of cross over. The microfluidic networks of the invention can be fabricated via replica molding processes, also provided by the invention, utilizing mold masters including surfaces having topological features formed by photolithography.

Abstract: There is provided a method for forming a pattern comprising two regions of different refractive indices easily, that is, a method comprising the steps of forming a pattern having a water-shedding oil-shedding region by use of a radiation sensitive resin composition and coating the pattern with a high refractive index resin solution using a solvent having low wettability to the water-shedding oil-shedding region so as to form two regions of different refractive indices.

Abstract: A lithographic apparatus is disclosed that has an imprint template or a template holder configured to hold an imprint template, and a substrate table arranged to receive a substrate, the apparatus further comprising walls which together with the substrate table and the imprint template or the template holder, are configured to form an enclosed space which is substantially sealed from a surrounding area.

Abstract: In a pattern formation method, pattern exposure is performed by selectively irradiating, with exposing light, a resist film formed on a substrate and made of a resist including a carboxylic acid derivative. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, the first resist pattern is exposed to a solution including a reducing agent for reducing the carboxylic acid derivate. Thereafter, a water-soluble film including a crosslinking agent for causing crosslinking with a material of the first resist pattern is formed on the first resist pattern having been exposed to the solution. Subsequently, a crosslinking reaction is caused by annealing the water-soluble film between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed.

Abstract: It is an object of the present invention to improve the usability of a material, and to provide a display device which can be manufactured by simplifying the manufacturing process and a manufacturing technique thereof. It is also an object of the invention to provide a technique in which a pattern of a wiring or the like constituting these display devices can be formed to have a desired shape with favorable controllability. One feature of a droplet discharge device of the invention comprises: a discharge means for discharging a composition including a pattern forming material; and a shape means for shaping the shape of the composition before the composition is attached to a formation region, in which the shape means is provided between the discharge means and the formation region.

Abstract: The invention describes a process and a device for producing at least one three-dimensional object, a photo-polymerizable material is solidified by means of simultaneous or almost simultaneous exposure of a build area or partial build area in a building plane via electromagnetic radiation, wherein a distance between a support plate, at which the object to be generated is built, and the building plane is changed during at least one exposure phase. It is possible according to the invention to solidify the three-dimensional object in a main direction during a radiation phase exceeding a current prescribed hardening depth, without interrupting supply of electromagnetic energy during the irradiation phase. Further, it is possible to control a current hardening depth of the photopolymerizable material during a building phase. Embodiments of suitable devices are also described.

Abstract: An apparatus includes an optical wave guide and a ferrule. The optical wave guide has a prespecified horizontal-positioning surface and a prespecified vertical-positioning surface. The ferrule is to precisely couple with the optical wave guide. The ferrule defines a first datum plane mating with the prespecified vertical-positioning surface of the optical wave guide to precisely mechanically vertically position the optical wave guide within the ferrule. The ferrule defines a second datum plane mating with the prespecified horizontal-positioning surface of the optical wave guide to precisely mechanically horizontally position the optical wave guide within the ferrule.

Abstract: Anti-reflective materials such as bottom anti-reflective coatings (BARC's) and sacrificial light absorbing materials (SLAM) may be made more effective at preventing coherent light or electron beam reflection from a substrate by including in the anti-reflective material an additive to alter the radiation beam path of the reflected light or electrons. The radiation beam path altering additive may be a reflective material or a refractive material. The inclusion of such a radiation beam bath altering additive may reduce line width roughness and increase critical dimension (CD) control of interconnect lines and vias.

Abstract: Aligned carbon nanotubes and composites for electrical interconnect and thermal interface materials are provided. In one preferred embodiment, an aligned carbon nanotube device comprises a substrate and a plurality of carbon nanotubes having a substantially vertical profile. The substantially vertical carbon nanotubes are coupled to the substrate. In another preferred embodiment, a carbon nanotube production method comprises depositing a catalyst on a substrate and flowing at least one of argon, hydrogen, and ethylene over the catalyst for a predetermined time at a predetermined temperature to produce a carbon nanotube. This production method enables production of high purity carbon nanotubes and also enables precise placement of carbon nanotubes on a substrate. Other embodiments are also claimed and described.

Abstract: The present invention concerns a process for the fabrication of electrical and electronic devices. A polymer film is patterned on a substrate. A thick film paste is deposited over the patterned polymer. The thick film paste is dried under conditions which allow diffusion of the polymer into the thick film paste. This renders the diffused area insoluble in alkaline development solution.

Abstract: The invention is an optical element for limiting the propagation of light in oblique directions with respect to the optical element surface, and includes: a transparent substrate and a light ray control layer formed on a flat surface of said transparent substrate, wherein the light ray control layer has a transparent portion and a light absorbing portion, the transparent portion has a plurality of independent pattern elements having an identical configuration separated by said light absorbing portion and arranged at intervals.

Abstract: A method for repairing photomask pattern defects includes patterning a target layer on a transparent substrate, thereby forming first patterns, detecting a defect die including a defect pattern by inspecting the first patterns; forming a mask layer on the transparent substrate, forming a mask pattern that selectively exposes the defect die by performing an exposure process and a development process on the mask layer; etching the target layer of the exposed defect die using the mask pattern as an etching mask to expose the transparent substrate, depositing a target layer on the exposed defect die of the transparent substrate, and patterning the deposited target layer, thereby forming a second pattern on the defect die.

Abstract: A method for forming patterns using a single mask includes: disposing a photo mask having a defined pattern, and performing an exposure process by controlling the focal length of an exposure apparatus to a focusing position to form a pattern having the same shape as the photo mask on the wafer; and using the same photo mask, and performing the exposure process by controlling the focal length of the exposure apparatus to a defocusing position to form a reverse pattern having a reversed image with respect to the pattern on the wafer.

Abstract: A method for producing high resolution nano-imprinting masters is disclosed. The method inverts the negative features of an exposed and developed positive e-beam resist to positive features in the patterned silicon nitride layer of the nano-imprinting master. A first, oxidation resistant, mask layer is used to pattern a DLC layer deposited on the silicon nitride layer. After patterning the DLC layer, the negative features of the DLC layer are filled with deposited metal, which creates a second mask layer subsequent to the removal of the remaining DLC layer. The second mask layer is used to etch the silicon nitride layer, creating the final nano-imprinting master.

Abstract: A resist pattern thickness reducing material has at least one type selected from a water soluble resin and an alkali-soluble resin. A process for forming a resist pattern includes a step for coating the resist pattern thickness reducing material such that the surface of a first resist pattern formed is covered and forming a mixing layer of the resist pattern thickness reducing material and the material of the resist pattern, on the surface of the resist pattern.

Abstract: A method of manufacturing a metal microstructure (1) by using a resin mold (13).

Abstract: An object of the present invention is to provide a process for producing a printed wiring board, which is advantageous not only in that the reduction in size and increase in density of the wiring board are achieved and further the steps are simplified, but also in that the connection reliability of mount parts and the yield are improved, and a photosensitive resin composition used in the process.

Abstract: A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition.

Abstract: Mechanical and/or structural devices are formed using electroplating techniques in conjunction with sacrificial materials that can also be formed using electroplated techniques. This can produce devices that are attached at only selected points to a substrate and/or structures having enclosed cavities on or above a working substrate. A particularly relevant use of such structure forming techniques is in the fabrication of an ink jet manifold and nozzle structure for use in an ink jet print head, particularly a MEMS-based ink jet print head.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract: The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin))

Abstract: In the pattern formation method, a resist film is formed on a substrate, and a barrier film is formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the barrier film. After the pattern exposure, the barrier film is exposed to a water displacing agent, and then, the resist film having been subjected to the pattern exposure is developed, so as to remove the barrier film and to form a resist pattern made of the resist film.

Abstract: Methods of manufacturing a fluid ejection device comprise, in one embodiment, forming filler structures on a substrate and laminating a dry film onto the substrate over the filler structures. The dry film defines a barrier layer around the filler structures and an orifice layer above the filler structures. The filler structures are removed to form voids within the barrier layer.

Abstract: The present invention relates to preparation of patterned workpieces in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a workpiece substrate. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described may apply to both masks and direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

Abstract: A vortex mask comprises a substrate, a first phase region positioned on the substrate, a second phase region surrounding the first phase region, and a third phase region positioned on the substrate and connected to the first phase region and the second phase region. When exposure beams penetrate the first phase region, the second phase region and the third region of the vortex mask, there will be 90 degrees of phase difference from each other. In addition, the first phase region and the third phase region can be positioned in a mirror image manner, and the third phase region connects to the first phase region and the second phase region in a point manner, which can be used to define the shape of a circular pattern.

Abstract: A large mask with random apertures may be formed by forming a smaller mask (also called a cell mask) with a random pattern of transmissive apertures which is then repeatedly replicated to create the large mask. The random pattern may be created by perturbing the aperture locations by a small amount or the apertures may be randomly placed within the cell mask provided certain criteria are met. Alternatively, a large mask with a random pattern of transmissive apertures may be formed without using a cell mask. This large mask may be used to fabricate diffusers and other devices that do not suffer from the interference, diffraction and other optical effects common in devices having structures that are non-randomly patterned.

Abstract: A resistless lithography method for fabricating fine stiuctures is disclosed. IN an embodiment, a semiconductor mask layer (HM) may be formed on a carrier material (TM, HM?) and a selective ion implantation (I) being effected in order to dope selected regions (1) of the semiconductor mask layer (HM). Wet chemical removal of the non doped regions of the semiconductor mask layer (HM) yields a semiconductor mask which can be used for further patterning. A simple and high precision resistless lithography method for structures smaller than 100 nm is obtained in this way.

Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.

Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N)

Abstract: The invention provides a pattern forming method including providing a polymerization initiation layer which is obtained by fixing, by a cross-linking reaction, a polymer having functional groups having polymerization initiation ability and cross-linking groups at side chains, on a support, and forming a pattern including a preparation zone and a non-preparation zone of a graft polymer by preparing the graft polymer on the surface of the polymerization initiation layer using graft polymerization, by contacting a compound having a polymerizable group on the polymerization initiation layer and supplying energy imagewise; an image forming method which applies the pattern forming method; a pattern forming material; and a planographic printing plate. A fine particle adsorption pattern forming method and a conductive pattern forming method are also provided.

Abstract: Microfabrication methods and devices in which microscale structural elements are provided in an intermediate polymer layer between two planar substrates. Preferred aspects utilize photoimagable or ablatable polymer layers as the intermediate polymer layer.

Abstract: A method for producing high resolution nano-imprinting masters is disclosed. The method inverts the negative features of an exposed and developed positive e-beam resist to positive features in the patterned silicon nitride layer of the nano-imprinting master. A first, oxidation resistant, mask layer is used to pattern a DLC layer deposited on the silicon nitride layer. After patterning the DLC layer, the negative features of the DLC layer are filled with deposited metal, which creates a second mask layer subsequent to the removal of the remaining DLC layer. The second mask layer is used to etch the silicon nitride layer, creating the final nano-imprnting master.

Abstract: This invention discloses a hybrid phase-shift mask (PSM) having multi-film structure that from bottom to top is transparent film, attenuate film, and opaque film. By using several exposure and develop processes as well as controlling the etching selectivity, the multi-film structure can be patterned to form the chrome-less PSM and alternate PSM features within its cell area, and form halftone PSM features within its periphery area.

Abstract: A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.

Abstract: Disclosed herein is a method for forming a pattern, comprising: attaching a single-layer or multi-layer dry film resist made of a semi-solid or solid material to part or all of the surface of a substrate; exposing the dry film resist to light either by irradiating a focusable energy beam directly onto the resist or by projecting a specific wavelength range of light onto the resist, to form a region to be filled with a functional material; charging the functional material into the formed region using a method such as inkjetting; drying the functional material; and removing the dry film resist, thus obtaining the desired pattern.

Abstract: A resist pattern forming method comprises the steps of plasma-processing a surface of an acid-feedable resist layer formed and patterned on a surface of a substrate in a gas atmosphere containing a fluorocarbon; attaching a resin composition crosslinkable in the presence of an acid to the plasma-processed surface of the resist layer; crosslinking the resin composition in a part in contact with the resist layer by feeding an acid from the resist layer, so as to form a crosslinked layer covering the resist layer; and removing the resin composition from a part excluding the crosslinked layer, so as to yield a resist pattern comprising the resist layer and the crosslinked layer covering the resist layer.

Abstract: A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first, light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.

Abstract: A method for shrinking opening sizes of a photoresist is provided. A patterned photoresist layer having an opening is formed on a substrate. The opening includes a first size. The photoresist layer is baked at a temperature below a glass transition temperature of the photoresist layer. A layer of SAFIER material is formed on the photoresist layer and the substrate. The layer of SAFIER material and the photoresist layer are baked at a temperature higher than the glass transition temperature to shrink the size of the opening. The layer of SAFIER material is removed. The first size of the opening is thus shrunk to a second size.

Abstract: A photosensitive resin composition suitable for forming a thick film and an ultra-thick film used for forming a thick resist pattern used in the process of forming a magnetic pole on a magnetic head and a bump, which comprises (A) an alkali soluble novolak resin, (B) an alkali soluble acrylic resin, (C) an acetal compound, and (D) an acid generator.

Abstract: A principal pattern made of a plurality of isolated transparent portions is formed in a light-shielding portion disposed on a transparent substrate having a transparent property against exposing light. The principal pattern includes a first principal pattern and a second principal pattern adjacent to each other at a given distance, and a first auxiliary pattern made of a phase shifter portion for transmitting the exposing light in an opposite phase to the exposing light passing through the transparent portion is formed between the first principal pattern and the second principal pattern.

Abstract: A reflective photomask for EUV light is disclosed. The reflective photomask may include a projecting pattern selectively formed on a substrate and a reflective layer on the substrate and the projecting pattern.

Abstract: A method for improved imaging performance of a microlithography photomask is described. By providing sub resolution evanescent wave assist features in regions surrounding a main photomask feature, the coupling of the evanescent energy from these features can add to the transmission efficiency of the main feature. The photomask comprises a transparent substrate support member having at least a first and second surface, wherein said first surface is smooth and said second surface is patterned with a plurality of grooves; a film coating disposed over said plurality of groves, wherein said film coating has one or more openings.

Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having photoresist patterns thereon and allowed to shrink under heat so that the spacing between the adjacent photoresist patterns is lessened, further characterized by containing a water-soluble polymer and a surfactant. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices, being excellent in controlling the dimension of patterns.

Abstract: An organic monomolecular film is formed on a first substrate, and micro processed using photolithography technique to form an organic monomolecular film pattern. Then, a thin film is selectively grown on the organic monomolecular film pattern, and transcribed onto a second substrate to form a micro pattern made of the thin film on the second substrate.