Abstract: There is provided a method of measuring defocusing when a semiconductor wafer is exposed to light. With the method, a resist is exposed to light by deviating a focus of the light by a given distance in relation to the semiconductor wafer with the resist applied thereto, and after development of the resist, resist patterns for measurement are formed. Based on respective lengths of the resist patterns for measurement, defocusing in relation to the resist is found.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: New organic-based radiation absorbing compositions are provided that are suitable for use as an antireflective coating composition (“ARC”) for an overcoated photoresist. These compositions also serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectively from an undercoated dielectric layer.

Abstract: Crosslinked particles are provided that are useful in the manufacture of dielectric materials for use in electronic devices such as integrated circuits. The crosslinked particles are prepared by activating crosslinkable groups on synthetic polymer molecules, where the crosslinkable groups are inert until activated and, when activated, undergo an irreversible intramolecular crosslinking reaction to form crosslinked particles.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation below 300 nm, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.

Abstract: A method of forming a photoresist includes forming a photoresist and patterning/developing it according to conventional methods. The photoresist is then subjected to ion implantation. The ions may be selected from the group consisting of argon, boron, boron fluoride, arsenic, phosphorous and nitrogen. The ion implantation during processing of the photoresist provides a stabilized photoresist and helps reduce CD loss, loss of the photoresist and formation of pin holes and striations.

Abstract: A method for producing a structured layer on a semiconductor substrate includes the steps of creating the layer on the substrate, modifying a surface of the layer to form a chemically neutral surface, creating an acid-forming photoresist layer on the layer on the substrate, exposing the acid-forming photoresist layer to light for embodying an acid-containing layer in the photoresist layer in accordance with a specified structure of a photoexposure mask, and selectively removing the acid-containing region of the photoresist layer with a lye. The method further includes modifying the surface of the foundation layer for reducing degradation in structuring the acid-forming layer.

Abstract: A method for forming a resist pattern comprising the steps of: forming a light-shield film on an overall surface of a transparent substrate; forming a resist layer and an organic film being capable of functioning as a trap layer or an electron beam buffer layer against electrons on an overall surface of the light-shield film in this order; carrying out exposure in a desired pattern above the organic film; and developing the resist layer and the organic film to form a desired pattern in the resist layer.

Abstract: A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.

Abstract: A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. A patterning method using the same is also disclosed.

Abstract: A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: Polymer aggregates in a photoresist layer may be dissolved or reduced in dimension by treatment with supercritical carbon dioxide. The supercritical carbon dioxide may be used before and/or after development of the photoresist. The SCCO2 treatment causes swelling of the photoresist and may allow polymer aggregates in the photoresist to be dissolved. Controlled release of the carbon dioxide de-swells the photoresist, resulting in reduced line edge roughness of openings in the photoresist and reduced resistance of metal lines formed in the openings.

Abstract: A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.

Abstract: New anti-reflective compositions for use in 193 nm applications are provided. The compositions comprise a polymer having recurring silane monomers. The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having improved adhesion of photoresists to the anti-reflective coating layer, thereby reducing or preventing the occurrence of photoresist pattern collapse typically seen in feature sizes of 100 nm or smaller.

Abstract: In a method for forming a resist pattern, the surface of a basic substance-containing underlying film is exposed to a plasma of a carbon-containing gas to modify the surface. A chemically modifying resist film is coated on the underlying film. And the chemically modifying resist is subjected to exposure and development treatments for patterning of the chemically amplifying resist.

Abstract: After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

Abstract: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.

Abstract: A method and system of TMAH concentration adjustment. Absorption values A1, Y1 to Ym of a recycled developer solution at wavelength 210 nm and m wavelengths between 220 nm and 250 nm are measured respectively, wherein m is equal to or greater than 2. Y1 to Ym are input to an nth-degree polynomial to generate a wavelength-absorption relationship Y=C1Xn+ . . . +Cn−1X+Cn, wherein X is wavelength, n is a positive integer and C1 to Cn are coefficients of the relationship. Wavelength 210 nm is input into the wavelength-absorption relationship to generate an absorption value Y210. A difference A3 between the A1 and Y210 is calculated as the absorption value of TMAH in the developer solution and A3 is then input to an absorption calibration curve of TMAH at 210 nm to generate a corresponding TMAH concentration. TMAH is then added to provide the corresponding TMAH concentration.

Abstract: The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.

Abstract: This invention concerns radiation durable organic compositions which are well-suited for use in 157 nm lithography by virtue of their high transparency and excellent radiation durability, and to a process for the preparation thereof.

Abstract: Stable non-photosensitive polyimide precursor compositions with an adhesion promoter in a non-NMP solvent for use in forming high temperature resistant relief images and a process for making said images.

Abstract: A process for the production of flexographic printing plates by laser engraving, in which the recording layer of a crosslinkable, laser-engravable flexographic printing element is crosslinked by the combination of a full-area crosslinking step with a crosslinking step which only acts at the surface, and a printing relief is engraved into the crosslinked recording layer by means of a laser, and flexographic printing plates obtainable by the process.

Abstract: The invention relates to a process for preparing a flexographic printing plate from a photosensitive element having a photopolymerizable layer and a thermally removable layer on the photopolymerizable layer. The process includes imagewise exposing the photosensitive element and thermally treating the exposed element to form a relief suitable for use in flexographic printing. The thermally removable layer can be transparent or opaque to actinic radiation. The invention also relates to a photosensitive element for use in this process. The photosensitive element includes a photopolymerizable layer and at least one thermally removable layer having a filler and a binder, wherein the binder is less than 49% by weight, based on the total weight of the binder and filler.

Abstract: Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.

Abstract: The invention provides black and white silver halide material for optical contact copying, comprising: at least one photographic emulsion layer including a silver-halide-containing matrix in which the matrix includes a polymer and a hydrophilic binder, wherein the ratio of the weight of silver in the emulsion layer to the weight of polymer in the emulsion layer per unit area is less than 2.0. The photographic material is suitable for use in optical contact copying providing reduced contact gain compared to that provided by conventional photographic material.

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: In semiconductor manufacturing, a pellicle film (28) is used to protect the surface of a reticle (24). The reticle (24) is used in an optical microlithography system (10) to pattern semiconductor wafers (18). To work properly, the pellicle (28) must be transparent at the particular wavelength of light used to expose photoresist through the reticle (24). The pellicle (28) is made more transparent to short wavelength light used by the optical microlithography system by removing unwanted hydrogen in the pellicle (28). The unwanted hydrogen is removed by exposing the pellicle (28) to a gas containing fluorine. This unwanted hydrogen apparently came as artifacts of the process of the making the pellicle (28), particularly the chemicals introduced to terminate the polymerization process and the ones used as solvents.

Abstract: TIMD (tetraisoprophyl methylene diphosphonate) as a light absorbance depressant to a light source of a wavelength of less than 200 nm, and a photoresist composition containing the same are disclosed. The disclosed chemically amplified photoresist composition containing TIMD is useful for a VUV (vacuum ultraviolet) photoresist composition due to its low light absorbance to a light source of a wavelength of 157 mn.

Abstract: The present invention discloses a method of producing a liquid flow path shape capable of refilling ink at a high speed by optimizing a three-dimensional shape of the liquid flow path and suppressing the vibration of a meniscus and a head thereof. According to the invention, a pattern to form the liquid flow path to be formed on a substrate with a heater is formed by a positive photosensitive material in a two-layered structure of upper and lower layers, and the lower layer is used for forming the liquid flow path after being thermally crosslinked.

Abstract: Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein, including special vapor prime and development operations.

Abstract: The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(PriO)2(EAA)2.

Abstract: Disclosed is an norbornene-based copolymer for photoresist, a preparation method thereof, and a photoresist composition comprising the same. The copolymer of the present invention exhibits high transparency to light of 193 nm wavelength and an excellent etching resistance, excellent resolution due to the remarkable difference between light-exposed part and light-unexposed part in the dissolving rate and excellent adhesion to the substrate due to very hydrophilic diketone group of its own. As a result, the copolymer of the present invention is very useful as ArF exposure photoresist material in the fabrication of semiconductor devices.

Abstract: Methods and apparatus for controllably dispensing fluids within wafer track modules using rotatable liquid dispense arms and nozzles. The fluid dispense apparatus may be specifically selected for developing a photoresist-coated substrate. A series of one or more rotatable arms can be mounted adjacent to a mounted substrate within a develop module, wherein each arm supports a dispense nozzle that is connected to a fluid source. The dispense nozzle may be formed with a plurality of nozzle tips for dispensing selected developer and rinse fluids. Each rotatable arm can be configured to rotate about its longitudinal axis to selectively position the dispense nozzle between various dispense positions and non-dispense positions to reduce risk of dripping solution onto the substrate. Methods for developing photoresist-coated semiconductor wafers are also provided herein using developer and rinse fluid dispense apparatus with a dispense arm that is rotatable about its longitudinal axis.

Abstract: Novel amine compounds having a nitrogen-containing cyclic structure and a hydrating group such as a hydroxy, ether, ester, carbonyl, carbonate group or lactone ring are useful for use in resist compositions for preventing a resist film from thinning and also for enhancing the resolution and focus margin of resist.

Abstract: Disclosed are methods of processing a semiconductor structure, involving the steps of depositing a light-degradable surface coupling agent on a semiconductor substrate; depositing a resist over the light-degradable surface coupling agent; irradiating portions of the resist, wherein the light-degradable surface coupling agent under the irradiated portions of the resist at least partially decomposes; and developing the resist.

Abstract: A polymer comprises recurring units of formula (1) and recurring units having acid labile groups which units increase alkali solubility as a result of the acid labile groups being decomposed under the action of acid, and has a Mw of 1,000-500,000. R1 and R2 each are hydrogen, hydroxyl, hydroxyalkyl, alkyl, alkoxy or halogen, and n is 0, 1, 2, 3 or 4. The polymer is useful as a base resin to form a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, and high etching resistance and is best suited as a micropatterning material for use in VLSI manufacture.

Abstract: A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided.

Abstract: Amine compounds having a cyano group are useful in resist compositions for preventing a resist film from thinning and also for enhancing the resolution and focus margin of resist.

Abstract: The sloped edges of patterned photoresist material are made more vertical by treating the exposed and developed photoresist pattern to an edge correction process. A layer of acid-based material is deposited on the photoresist pattern. The layer is then exposed to acid-neutralizing light to create a top-to-bottom gradient of acidity. The structure is then exposed to heat to cause the acid to diffuse into the edge of the photoresist in amounts roughly proportional to the gradient. A subsequent development process removes the acid-based layer and also reshapes the photoresist edge in proportion to the acid diffusion, leaving a more vertical edge.

Abstract: A wafer exposure apparatus includes a special wafer cooling unit, namely, an air showerhead, for controlling the temperature of a wafer which is to be transferred from a wafer pre-alignment system to a wafer stage of photolithography exposure equipment. The wafer which has been heated in the course of being transferred from a spin coater to the wafer pre-alignment system, and may be further heated by sensors of the wafer pre-alignment system, is cooled to the same temperature as that of a wafer stage. Accordingly, a thermal equilibrium may be rapidly established between the wafer and the wafer stage when the wafer is transferred to the wafer stage. Accordingly, excessive thermal expansion of the wafer caused by a difference in temperature between the wafer and the wafer stage is prevented. Therefore, an excessive error in aligning the wafer with the optics of the photolithography exposure equipment can be prevented.

Abstract: Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

Abstract: An adhesion promoter to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. A photoactive adhesion promoter (PAG) is described which helps reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process.

Abstract: A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.

Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): 1

Abstract: The present invention provides radiation sensitive compositions and methods that comprise novel means for providing relief images of enhanced resolution. In one aspect the invention provides a method for controlling diffusion of photogenerated acid comprising adding a polar compound to a radiation sensitive composition and applying a layer of the composition to a substrate; exposing the composition layer to activating radiation whereby a latent image is generated comprising a distribution of acid moieties complexed with the polar compound; and treating the exposed composition layer to provide an activating amount of acid.

Abstract: A method and system of TMAH concentration adjustment. Absorption values A1, Y1 to Ym of a recycled developer solution at wavelength 210 nm and m wavelengths between 220 nm and 250 nm are measured respectively, wherein m is equal to or greater than 2. Y1 to Ym are input to an nth-degree polynomial to generate a wavelength-absorption relationship Y=C1Xn+ . . . +Cn−1X+Cn, wherein X is wavelength, n is a positive integer and C1 to Cn are coefficients of the relationship. Wavelength 210 nm is input into the wavelength-absorption relationship to generate an absorption value Y210. A difference A3 between the A1 and Y210 is calculated as the absorption value of TMAH in the developer solution and A3 is then input to an absorption calibration curve of TMAH at 210 nm to generate a corresponding TMAH concentration. TMAH is then added to provide the corresponding TMAH concentration.

Abstract: Polymerizable silicon-containing compounds of formula (1) wherein R1 is hydrogen, halogen or monovalent organic group are polymerized into polymers. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity and resolution at a wavelength of less than 300 nm, and high resistance to oxygen plasma etching, and thus lends itself to micropatterning for the fabrication of VLSIs.