Abstract: A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.

Abstract: A new photolithographic process using the method of photoresist double coating to fabricate fine lines with narrow spacing is described. A layer to be etched is provided overlying a semiconductor substrate. The layer to be etched is coated with a first layer of photoresist and baked. The first photoresist layer is exposed to actinic light through openings in a mask and developed to produce the desired first pattern on the surface of the first photoresist wherein the openings have a minimum width of the resolution limit plus two times the misalignment tolerance of the photolithography process. The layer to be etched is coated with a second photoresist layer where the layer to be etched is exposed within the openings in the first photoresist layer.

Abstract: A method for producing a color filter involves (a) forming a positive photosensitive coating film on a transparent electrically conductive layer of a transparent substrate; (b) forming a light-irradiated region where a light irradiation amount is different in two steps; (c) developing a larger light-irradiated portion to lay-open the transparent electrically conductive layer followed by electrodepositing a light shielding layer thereon; (d) forming on the positive photosensitive coating film undeveloped in the step (c) a light-irradiated region where a light irradiation amount is different in two steps; (e) developing a larger light-irradiated portion of the photosensitive coating film to lay-open the transparent electrically conductive layer followed by electrodepositing a colored coating thereon; (f) forming on the positive photosensitive coating film undeveloped in the step (e) a light-irradiated region where a light irradiation amount is different in at least three steps; and (g) developing the photosensi

Abstract: A photosensitive material comprises a photosensitive composition comprising a photosensitive and heat-developable element and a photopolymerizable element. An imagewise unexposed area on the material is polymerized by imagewise exposure, heating and whole areal exposure. The photosensitive and heat-developable element comprises at least a photosensitive silver halide, an organic silver salt and a reducing agent of the formula ##STR1## The photopolymerizable element comprises at least a polymerizable polymer precursor and a photopolymerization initiator. An image forming method comprises the steps; subjecting a photosensitive material in the same layer to imagewise exposure and heating to form an image; and subjecting the resultant photosensitive material to whole areal exposure to polymerize and imagewise unexposed or exposed area thereof.

Abstract: A lithographic patterning process uses multiple exposures to provide for relatively reduced pitch for features of a single patterned layer. A first imaging layer is exposed to radiation in accordance with a first pattern and developed. The resulting patterned layer is stabilized. A second imaging layer is subsequently formed to surround the first patterned layer, exposed to radiation in accordance with a second pattern, and developed to form a second patterned layer. As the first patterned layer has been stabilized, the first patterned layer remains with the second patterned layer to produce a single patterned layer. For another embodiment, a single imaging layer is patterned by exposure to radiation in accordance with two separate patterns. An exposed portion of the imaging layer is suitably stabilized to withstand subsequent lithographic process steps.

Abstract: A positive-acting photoresist composition which produces crosslinked images and processes for using the photoresist composition are disclosed. The photoresist composition is prepared from a mixture containing a film forming, polymer-containing, acid hardening resin system, an acid or acid generating material (preferably in the form of a thermal acid generator) for crosslinking the acid hardening resin system, and a photobase generating compound. The photoresist composition is applied as a film onto a substrate surface and selectively imagewise exposed through a photomask to actinic radiation. The actinic radiation causes the photobase generator to produce a base in the imagewise exposed portions of the photoresist film. The photochemically generated base neutralizes the acid in the imagewise exposed areas of the photoresist film.

Abstract: The present invention is directed to a method of hardening a photoresist formed on a patterned layer during photolithograpy, without causing undesirable shrinkage of the resist features. The patterned layer is disposed on a semiconductor substrate, and the photoresist layer is disposed on the patterned layer in a conventional manner. The photoresist layer is irradiated and developed in a conventional manner to have the desired pattern formed therein. The larger features of the developed photoresist layer are irradiated without heat to thereby harden these features, without irradiating the smaller features. The hardening may be performed by screening the smaller features from the radiation applied to the photoresist layer, or by scanning a beam across only the larger features. The radiation may be UV light or an electron beam. Alternatively, all of the features of the photoresist may be hardened by exposure to a basic atmosphere immediately before, during or immediately after irradiation with UV light.

Abstract: A radiation-sensitive resist composition for manufacturing highly resolved relief structures is characterized by the following components:a film-forming base polymer;a radiation-active component that releases an acid when irradiated;a radiation-sensitive ester-former; anda solvent.

Abstract: Reduction of reflection from an integrated circuit substrate during exposure of a photoresist layer on a surface such as an integrated circuit wafer is minimized by incorporating an antireflective coating between the photoresist layer and the integrated circuit substrate. The antireflective layer, after exposure and development of the photoresist layer, is preferably removed by exposing the non-masked antireflective layer to activating radiation while heating the coating to induce a solubilizing reaction in an antireflective coating and a curing reaction in an overlying photoresist mask. Thereafter, the exposed portions of the antireflective layer are removed by treatment with a suitable developer.

Abstract: The present invention provides an image-forming material which comprises a support having thereon, in the following order, (1) a photosensitive composition layer comprising (a) an o-quinonediazide compound, and (b) an additive which reacts with a photoreaction product of the o-quinonediazide compound on heating to produce an alkali-insoluble matter, and (2) a water-soluble high molecular compound layer or a silicone rubber layer. The present invention also provides an image formation process which comprises exposing an entire surface of the image-forming material to light rays which render the o-quinonediazide compound soluble in an alkaline developer, imagewise heating the image-forming material, and then developing the image forming material with an alkaline developer to remove those areas which have not been heated.

Abstract: Surface reforming of a polymeric article containing a polymerizable compound is effectively performed by polymerizing the polymeric article in contact with a surface reforming medium because the transfer of the material constituting the surface reforming medium to the polymeric article is enhanced by the polymerization. The surface reforming can be performed locally selectively, i.e., imagewise. The remaining un-polymerized part may be subjected to further surface reforming, e.g., by using another type of surface reforming medium or attachment of powder, to provide an enhanced contrast of surface property. Such an enhanced contrast of surface property can be effectively used, e.g., for production of a printing plate.

Abstract: A method for manufacturing a substrate having electrically conductive circuits on its surface, window-shaped films on the electrically conducive circuits and a frame-shaped film at the regions not occupied with the window-shaped films, includes the steps of:(a) coating the surface of a transparent substrate with a photoresist composition to cover the electrically conductive circuits-carrying surface of the substrate, followed by forming a photoresist film,(b) superposing a photomask on the surface of the photoresist film formed in step (a) and exposing the thus mask-superposed photoresist film to light,(c) subjecting the substrate obtained in step (b) to development,(d) subjecting the photoresist film left in step (c) to heat-treatment, second exposure to light or no treatment,(e) subjecting the substrate passed the steps (a) to electro-deposition using the electrically conductive circuits on the substrate as one electrode to form electro-deposition coating films,(f) eliminating the photoresist film having be

Abstract: High volume manufacturing process for flexographic printing plates comprises wash out, drying and post-exposure. During drying the printing plates are transported with a plurality of endless conveyors. The transport speed during drying/post-exposure is lower than the transport speed during wash out such that a storage of flexographic plates can be achieved in the drying and post exposure portion of the process.

Abstract: A method for producing an ink jet head substrate with an ink passage communicated to an ink discharge opening comprises the steps of exposing a positive type photosensitive resin on a substrate according to the pattern of the ink passage and developing part of the resin according to the pattern of the ink passage. The remaining resin matching the pattern of the ink passage is then further exposed and developed and the resulting gap in the pattern is filled with material for forming the ink passage. The rest of the resin is then removed to form the ink passage which, because of the multiple exposing and developing steps, provides an ink jet head with an ink passage of high precision.

Abstract: The invention describes a developing solvent for layers which are crosslinkable by photopolymerization and contain a binder based on an elastomeric polymer, a photopolymerizable monomer compatible therewith and a photoinitiator. The developing solvent comprises an aromatic compound of the general formula I ##STR1## wherein R.sup.1 to R.sup.4 are the same or different and denote hydrogen, (C.sub.1 -C.sub.5)n-alkyl or iso-alkyl and R.sup.1 and R.sup.2, provided that R.sup.1 and R.sup.2 are directly adjacent, may also form a cycloaliphatic or aromatic ring having 5 or 6 carbon atoms as ring members which are preferably non-substituted,provided that the sum of carbon atoms of the substituents and ring members is from 9 to 13. Compared with solvents of the prior art, the developing solvent of the present invention is non-toxic, can quickly be removed from the layer, has a high capacity for layer components and is capable of developing plates based on nitrile rubber.

Abstract: The present invention relates to a resist processing device and resist processing method that enable resist pattern formation with a high degree of accuracy, and furthermore, enable in continuous dry etching, an isotropic etching possessing extremely high selectivity. The resist processing device is provided with at least a mechanism for the radiation of ultraviolet rays onto a substrate having a resist formed thereon, and a mechanism for the introduction of inert gas into the device. The resist processing method is characterized in that the radiation of ultraviolet rays onto a substrate which has a resist form thereon is conducted in an inert gas atmosphere.

Abstract: A 2-diazo-1,2-quinone compound having a substituent group containing an alkyl group which is substituted by at least one fluorine atom is described. This compound has a capacity to change its polarity when exposed to light. The invention also provides an image forming material in which the invention compound is added to at least one of laminated layers. When these laminated layers are exposed to light, the adhesiveness of the compound-containing layer to its adjoining layer is reduced effectively due to the polarity-changing ability of the compound, thus making the easy delamination of the layers possible. This compound is applicable to many instances in which image receiving sheets are used, such as the formation of a multi-color image by a transfer method (a color proof, for example) and the preparation of a printing plate of the delamination development type.

Abstract: A camera speed lithographic plate precursor composition is used for the preparation of waterless, imaged printing plates. The plates comprise a solid substrate with a first layer of a photopolymerizable, oleophilic coating; a second layer of silicone rubber; a third protective film layer; and a top or fourth layer comprising a silver halide emulsion containing polymeric binders or keying agents.

Abstract: This invention relates to a process for making a flexographic printing plate from a photosensitive printing element having an infrared reduction ablatable layer capable of being selectively removed by a laser beam and wherein the process includes placing a material capture sheet in proximity to a photopolymer layer.

Abstract: There is provided a WORM type organic optical recording medium comprising a recording layer, a reflective layer and a protective layer which are formed in sequence on a substrate, the recording layer consisting of near infrared absorbing dye able to absorb a laser beam and to generate heat and provided with a curing layer of thermosetting or photocuring resin thereon or thereunder. There is also provided a method for the prevention of rewrite in the organic optical recording medium, comprising subjecting the organic optical recording medium to heating up to 50.degree. C. or exposure to a UV light, to cure the curing layer. The organic optical recording medium requires reduced amounts of the dye and, thus, has improved reflectivity. By virtue of this improvement in reflectivity, a low-price metal may be employed in the reflective layer, bringing about additional economic benefit, along with lower requirements for dye.

Abstract: This resist removing method realizes efficient production of semiconductor devices and is configured to ensure both safe production and reliable semiconductor devices.The present invention can be applied to a resist removing method used in combination with a high dose of ions injection process of applying a high dose of impurity ions to a semiconductor wafer onto which surface a far-ultraviolet-ray hardened resist is partially applied. That is, the present invention comprises a resist hardening step of evenly hardening the resist by treating it in a far-ultraviolet-ray irradiation process and a baking process before a high dose of ions injection process. Additionally, it comprises a resist ashing step of removing the resist by forcing the resist to react under the pressure of 2 through 5 Torr to O.sub.2 plasma excited by a microwave after the high dose of ions injection process.

Abstract: A method of manufacturing a photomask for the production of dual depth features on substrates, and the photomask so manufactured, wherein the method of manufacturing the photomask is comprised of the steps of: (1) coating a substrate which transmits at least two selected wavelengths with: a) an optical filter material which prevents the transmission of at least one of the wavelengths, b) an opaque masking material, and c) a dual tone photoresist; (2) using a single mastering tool to selectively expose areas of the coated substrate to one of the wavelengths; (3) developing the photoresist; (4) etching the exposed masking material and optical filter material; (5) exposing the remaining coated substrate; (6) developing the remaining photoresist; (7) etching the exposed surface; and (8) stripping away the remaining photoresist.

Abstract: A method for making a three dimensional structure of the aperture in a photoresist layer on a semiconductor substrate by differentiating dose of exposure light between parts of a photoresist layer. One example of the three dimensional structure is an overhang-platform structure; that is, one side wall of a narrow aperture has an overhang and the opposite side wall has a platform. By separately forming one photoresist layer segment having the overhang wall and the other photoresist layer segment having the platform wall, the distance between the edges of the overhang and the platform can be made smaller than the resolution limit of the photoresist material, which enables making a path line on a substrate whose width is smaller than the resolution limit. Many types of photoresist layers and photomasks for producing such photoresist layers are disclosed.

Abstract: A filter completely free from resin residues remaining on the glass substrate surface in the photolithographic process is prepared with a high production efficiency by applying a photosensitive resin to a substrate surface, subjecting the applied resin to light exposure and development by photolithography, and heating the resin, thereby baking the resin, where the substrate surface is irradiated with an ultraviolet ray in an oxygen-containing atmosphere, before and/or after the baking, thereby removing residues remaining on the substrate surface due to the development.

Abstract: A stamper for use in producing high-density recording disks of the type in which an information signal pattern is formed as successive minute pits in a recording surface, is formed of glass and is manufactured by an image reversal photolithography process in which a film of a positive type of photoresist is scanned by a modulated light beam, baking is then executed to produce cross-linking of molecular chains within the portions of the photoresist which have been exposed to the scanning beam, and the photoresist is then subjected to overall flood exposure to light, whereby the photoresist portions which were not exposed to the scanning light beam can be removed by applying an alkaline solution. A photoresist pattern is thereby formed, to be used as an etching mask which can be patterned to a higher degree of resolution than has been possible hitherto, whereby a glass stamper for producing very high-capacity recording disks can be manufactured.

Abstract: An improved semiconductor device fabrication technique is disclosed. A resist layer, composed of a chemical compound which generates an acid when exposed to energy light and a resin which contains protecting groups that are removed from the resin by acid, is formed on top of a semiconductor substrate. The resist layer is subjected to a lithography and a development process and is formed into a resist pattern. This resist pattern is exposed to ultraviolet beams, and the chemical compound generates an acid and the protecting groups are removed from the resin. As a result of such an elimination reaction, the surface of the resist pattern becomes coarse. Thereafter, an implant of ions is carried out to the semiconductor substrate using the resist pattern as a mask. The surface of the semiconductor substrate is cleaned using a cleaning solution, and the resist pattern with a coarse surface can easily and completely be removed from the semiconductor substrate.

Abstract: A photosensitive recording element comprises(A) a dimensionally stable substrate,(B) a photopolymerizable relief-forming recording layer and, if required, an adhesion-promoting layer arranged between (A) and (B), a release layer (C) applied to that side of the recording layer (B) which faces away from the substrate (A), and, if required, a cover sheet (D) applied thereon, the photopolymerizable relief-forming recording layer (B) containingb.sub.1) at least one polymeric binder,b.sub.2) at least one photopolymerizable olefinically unsaturated monomer which is compatible with b.sub.1),b.sub.3) at least one photopolymerization initiator andb.sub.4) at least one aryl alkyl ketone,and is suitable for the production of relief printing plates.

Abstract: An electron beam exposure method for controlling the solubility of resist layers used in a variety of lithography processes, to permit removal of the resist material from selected positions and depths in the resist. By controlling the energy of a uniform electron beam impinging on the resist, the method selects a resist depth for applying a dose of electrons, the effect of which is to change the solubility properties of the resist material at the selected positions and depths. Subsequent removal of unwanted portions of the resist produces desired resist wall slope and edge profiles in the developed patterns in photoresist. One embodiment of the invention uses the same basic method to produce three-dimensional structures in the resist material, including bridge-like structures in which lower layers are removed from beneath intact upper layers.

Abstract: A method for fabricating a phase shifting mask suitable for positive photoresist process. The method includes the steps of: (a) forming a plurality of opaque layer patterns (44) in an array at a fixed interval from each other in their width direction on a substrate (41); (b) coating an interlayer (45) on and covering the opaque layer patterns; (c) forming interlayer patterns (45) on the substrate at both longitudinal sides of each opaque layer pattern by etching the interlayer; (d) forming a plurality of insulation films (46) on the substrate between adjacent pairs of the opaque layer patterns on which the interlayer patterns are formed; (e) removing the remaining interlayer under each of the insulation films; and (f) forming a phase shifter (47) having a ninety degree area (47-2) in a region where the interlayer has been removed and a one hundred and eighty degree area (47-1) in the remainder of the region by heating the insulation film.

Abstract: A method of forming electrode patterns on a substrate. A substrate (30) is patterned with a photoresist layer (14) on the front side so that portions (18) of the substrate are revealed. A metal oxide layer (32) is deposited on the patterned photoresist layer and the revealed portions of the substrate. The patterned photoresist layer is then flood exposed to actinic radiation (19). The photoresist pattern (20) is removed, carrying with it those portions of the metal oxide layer deposited on the photoresist layer, forming an electrode pattern (22) by a lift-off technique.

Abstract: A mercury cadmium telluride (MCT) substrate 30 is immersed in a liquid 34 (e.g. 0.1 molar concentration hydrochloric acid) and illuminated with collimated radiation 24 (e.g. collimated visible/ultraviolet radiation) produced by a radiation source 20 (e.g. a 150 Watt mercury xenon arc lamp). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the MCT substrate 30. An etch mask 32 may be positioned between the radiation source 20 and the substrate 30. The MCT substrate 30 and liquid 34 may be maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the MCT is not appreciably etched by the liquid. Upon illumination the etch rate is substantially increased. A further aspect is the addition of a passivant (e.g. iodine) to the liquid which forms a substantially insoluble passivation layer 36 on the substrate which is removed or partially removed by the radiation 24.

Abstract: Ultra-small equal-width lines and spaces are generated on an integrated circuit wafer using multiple exposures and phase-shifting at the wafer level. In particular, an integrated circuit wafer is coated with a layer of photoresist and then masked using a mask defining a pattern of multiple feature lines arranged at a regular line pitch. The layer of photoresist is then underexposed so as to partially bleach portions of the layer of photoresist in accordance with the pattern. Next, the mask and the integrated circuit wafer are positionally translated relative to one another by a predetermined fraction of the line pitch, and the layer of photoresist is then again underexposed. Developing the photoresist layer creates a stepped profile. The layer of photoresist is then blanket exposed, the stepped profile causing exposure in the vicinity of steps to be retarded. The layer of photoresist is then developed, producing thin lines of photoresist separated by substantially equal spaces of no photoresist.

Abstract: Patterned film portions are removed from a surface of a flat substrate by irradiation with a focused ion beam without created undesired scars or processing grooves in the substrate surface. This is achieved by applying a masking substance only onto the substrate surface where it is not covered by the patterned film portions, and then using the focused ion beam to etch away the patterned film portions.

Abstract: Sub-micron features are defined photo-lithographically by combining phase-shifting techniques with conventional photo lithographic techniques. In a first step, phase-shifting edges are defined in a photoresist layer. Dark-bands develop at the phase-shifting edges due to wavefront interference of an illuminating radiation in a subsequent exposure step. Development leaves behind sub-micron sections of photoresist which were covered by the dark-band regions. The dark-band sections are hardened and overcoated with a new layer of photoresist. A second pattern is projected onto the second layer of photoresist using conventional techniques. The second pattern is developed so as to create features having dimensions reduced by parts of the dark-band sections previously developed.

Abstract: A photochemical method of making a tactile design comprises the steps of exposing to light a selected portion of photo-sensitive layer-supported by a substrate; applying a decorative coating to the photo-sensitive layer; applying a photo-sensitive emulsion over the decorative coating; exposing to light the same selected portion of the photo-sensitive emulsion; and removing the photo-sensitive emulsion, the decorative coating, and the photo-sensitive layer from the non-selected portions. The tactile design comprises a layer of photo-sensitive material fixedly attached to a selected portion of a substrate wherein the layer has been exposed to light and the layer projects away from the surface of the substrate a sufficient distance to be sensitive to the touch. At least one decorative coating is fixedly attached to the photo-sensitive layer.

Abstract: A method of forming electrode patterns on a substrate. A transparent substrate (10) is patterned with a photoresist layer (14) on the front side so that portions (18) of the substrate are revealed. A metal oxide layer (12) is deposited on the patterned photoresist layer and the revealed portions of the substrate. The patterned photoresist layer is then exposed to actinic radiation (19) through the back side (25) of the transparent substrate. The photoresist pattern (20) is removed, carrying with it those portions of the metal oxide layer deposited on the photoresist layer, forming an electrode pattern (22) by a lift-off technique.

Abstract: Structured polymer layers having nonlinear optical properties are produced by a process wherein either organic compounds containing ethylenically unsaturated groups are subjected to free radical copolymerization (A) with stilbene, azo or azomethine compounds containing ethylenically unsaturated groups and donor and acceptor groups, or organic compounds containing ethylenically unsaturated groups are subjected to free radical polymerization and are mixed (B) with stilbene, azo or azomethine compounds containing ethylenically unsaturated groups and donor and acceptor groups, the copolymers (A) or mixtures (B) thus obtained are exposed imagewise to high-energy radiation, the unexposed parts are removed and the structured polymer layers thus obtained are polarized in an electric field for orientation of the chromophoric structural units in the region of the glass transition temperature of the polymer and crosslinked in an applied electric field.

Abstract: This is a method for forming patterned features. The method comprises: forming a single layer of resist 12 on a substrate 10, the layer 12 having a thickness; patterning the resist by selective exposure to a first energy source 16 to modify the developing properties of portions of the resist, leaving an amount of the thickness unexposed; and developing the resist. This is also a device which comprises: a substrate; a layer of resist over the substrate; and an energy absorbing dye in the resist. Other methods and structures are also disclosed.

Abstract: A photomask for projecting a transfer pattern onto a wafer having a plurality of regions with different surface levels includes a transparent substrate; a shielding member on the transparent substrate having a plurality of patterns for projection onto respective regions of the wafer; and an optical-path-length varying layer on at least one of the patterns corresponding to a region of the wafer other than a reference region of the wafer for changing the optical path length of light transmitted through the pattern by a length corresponding to the difference in surface level between the corresponding region and the reference region of the wafer.

Abstract: The invention relates to a method for forming a resist pattern for dry etching a phase shifter layer in which a phase shifter pattern portion and a portion for protecting the surface of a light-blocking pattern are formed by a single photolithographic step. A light-blocking patter 40 is formed on a phase shifter layer 33, followed by the formation of a positive to negative image reversible resist thin film 41. A given region of the resist thin film 41 that includes a part of the unpatterned region thereof is exposed to ionizing radiation 42. Post-exposure baking for image reversal is carried out. Subsequently, the whole back side of the substrate is exposed to ultraviolet light 44 using the light-blocking pattern as a mask, thereby enabling only an unexposed region of the unpatterned resist to be soluble in a developer. The resist thin film 41 is developed to form a resist pattern 45.

Abstract: Negative relief copies are produced by imagewise exposure of a recording plate consisting of a substrate and a photosensitive layer which is applied thereon and contains, as photosensitive compounds, esters of 1,2-naphthoquinone-2-diazide-4- and/or -5-sulfonic acid or -carboxylic acid, heating of the exposed plate, uniform exposure of the plate and development of the relief copy by dissolving the alkali-soluble components from the recording layer by means of an aqueous alkaline developer, by a process in which the photosensitive layer of the recording plate contains a reaction product ofa) from 50 to 99% by weight of an oligomeric or polymeric condensate ofa.sub.1) from 0.5 to 1 mol of an alkyl- and/or alkoxy-substituted monohydric, dihydric or trihydric hydroxybenzene,a.sub.2) from 0 to 0.5 mol of phenol anda.sub.3) from 0.5 to 1.5 mol of a C.sub.1 -C.sub.12 -carbonyl compound,the sum of the amounts of a.sub.1) and a.sub.

Abstract: In bubble jet heater dies, a photolithographic process is disclosed to form patterned photoresist structures having re-entrant angles to facilitate an improved lift-off structure for anti-cavitation layer deposition. A substrate is coated with a photoresist which includes 0.5% to 1.0% Monazoline C. When exposed to Ultra-Violet light and developed, apertures in the photoresist have inverted side walls. Anti-cavitation material, such as tantalum, is then sputtered onto the substrate and the photoresist to form patterned metal. structures. The lift-off of the patterned photoresist is easily performed leaving behind the patterned metal structures. The use of this lift-off deposition method prevents stress-cracking in the anti-cavitation layer seen in deposition and etch methods.

Abstract: A chamber is disclosed, as for example an optical manipulation chamber, which has a pair of spaced windows and a central core member between the windows. The windows are aligned in parallel planes and the central core member contains a plurality of compartments and channels. A radiation curable resin is used, in combination with injection ports, to form the channels and compartments. The configuration of the channels and compartments is placed on a mask having shielding and nonshielding regions. Radiation is passed through the mask as the resin is injected through the ports, thereby curing the resin which is exposed to the radiation. The channels and compartments can be accurately designed in minute detail.

Abstract: A lithographic printing plate precursor and process for its utilization have been discovered through which negative and positive original images can be printably reproduced on the plate precursor in substantially fewer development steps. The precursor plate is exposed sequentially to either the negative or positive original with the resultant image subsequently developable in a single process or step. The process is achieved by using a precursor plate having two coatings of significantly different photographic sensitivity to light, i.e., speed as characterized by "camera speed" or "contact speed" and imagewise exposing the originals in sequence to alternative speeds. The contact speed coating may be negative-working or positive working while the camera speed coating is negative-working. The camera speed coating is developed followed by exposure of the contact speed coating. Images produced at camera speed are removed and non-image bearing portions of the contact speed coating are removed.

Abstract: In a method of forming contact holes in an interstage insulation layer having a thick portion on the semiconductor substrate in which a first contact hole leading to the substrate surface is to be formed and a thin portion on an electrode in which a second contact hole leading to the electrode is to be formed, a positive-type resist layer is formed on the interstage insulation layer. Then first and second portions of the resist layer which are aligned with the first and second contact holes to be formed are exposed to light, and thereafter the resist layer is heated, thereby making the exposed first and second portions insoluble in a developer. Thereafter, the first portion of the resist layer is exposed to light and then subjected to a developing treatment to form an opening in the first portion of the resist layer.

Abstract: A method of preparing a fine pattern on a substrate characterized by the dry development of a photoimaged, etch resistant pattern on a receiver substrate. The pattern is transferred from a carrier substrate to the receiver substrate via a hardenable liquid adhesive. This method eliminates adverse reflection effects caused from substrate topography in single layer photoresist systems and also avoids time consuming multiple coatings in multilayer photoresist systems used to make fine patterns. The method is particularly useful in the fabrication of integrated circuits and fine dimension patterns.

Abstract: A method of adjusting exposure of an energy beam to a lithographic resist sensitive to the energy beam, which method comprises determining where in a pattern to be exposed the energy level will exceed a critical thermal level, and adjusting the pattern and kind of exposure of the resist where the critical level is exceeded. One technique is to adjust the level exposure of the resist to a lower level equal to or less than the critical level with repeated exposures of the pattern in areas where the critical level is exceeded. The energy level monitored can be a thermal level measured as a temperature of the resist. A second technique is to adjust the exposure level by modifying the pattern and duration of exposure of the resist to a longer duration providing exposures equal to or less than the critical level with the modified pattern of exposures of the pattern in areas where the critical level is exceeded.

Abstract: Standard processing techniques for creating a patterned polyimide film from a radiation sensitive polyimide film forming composition are modified to include a post-develop, flood exposure/hardening step which crosslinks precursors of the polyimide film prior to curing. The flood exposure/hardening step prevents pull-back of the wall profile which occurs during the shrinkage of radiation sensitive polyimide film forming composition which occurs during thermal curing.

Abstract: Photoreactive polymers are treated by exposure to microwave energy. A film of a photoreactive polymer (12), such as a photoresist, is applied to a substrate (10) and selectively exposed to ultraviolet light. The latent image produced is further cured or polymerized by treating the photoresist with microwave energy. Combinations of microwave and thermal energies are also used. The treated photoresist is then developed, producing a sidewall (17) that is vertical, and is improved by reduction of anomolies such as scum or a foot (16) at the base of the resist.

Abstract: This invention relates to negative working photopolymerizable sheet constructions which, upon exposure to an actinic radiation source through a screened image, can accurately reproduce said image. The construction is useful as a color proofing film which can be employed to accurately predict the image quality from a lithographic printing process. Image development is by peel apart processing.