Abstract: The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.

Abstract: Negative-acting flexographic printing plates display enhanced performance when backside irradiated with ionizing radiation instead of longer wavelength ultraviolet radiation. A better defined floor and more readily controlled floor is produced on the final printing plate.

Abstract: A process for forming a fine resist pattern which comprises forming an organic thin film by coating a substrate with a resist comprising, as a base polymer, a polymer to which there is chemically bonded a functional group which is converted into amino group or sulfonic acid group responding to a first energy beam; forming a surface exposed patterned layer at the vicinity of the surface of the organic thin film by selectively exposing said surface to said first energy beam; selectively staining said surface exposed patterned layer with a substance which absorbs a second energy beam; exposing the entire surface of said organic thin film to said second energy beam and forming a resist pattern by developing the organic thin film exposed to said second energy beam. According to the process of the present invention, a fine resist pattern of a high resolution can be obtained using an exposure apparatus of a shallow focal depth without largely improving the conventional resist process technology.

Abstract: A process for the formation of an image comprises(i) electrodepositing on a conductive surface a layer of a quinone diazide positive photoresist,(ii) subjecting the layer to radiation in a predetermined pattern,(iii) heating the layer such that areas thereof exposed in stage (ii) are rendered insoluble in an aqueous base developer,(iv) subjecting the layer to radiation such that the areas not exposed in stage (ii) are rendered more soluble in an aqueous base developer than the areas rendered insoluble in stage (iii) and(v) removing the areas not exposed in stage (ii) by treatment with an aqueous base developer.The process is useful in the production of printing plates and printed circuits.

Abstract: A method of forming a resist pattern on a main surface of a semiconductor substrate comprising the steps of exposing a resist to light and developing it to become a predetermined pattern, curing the surface of the resist pattern formed by the exposing and developing treatments by irradiating the surface with far ultraviolet rays having a short wavelength, and baking the resist pattern subjected to a light irradiation treatment. The light irradiation treatment is performed by irradiating the surface of the resist pattern, which is not shaded from light with the far ultraviolet rays, in a state in which a resist pattern region formed on a peripheral portion of the semiconductor substrate is shaded from light. As a result, a crack can be prevented from forming on the resist of the peripheral portion of the semiconductor substrate. A light irradiation apparatus used in the light irradiation treatment comprises shading means for selectively intercepting the irradiation light.

Abstract: A method is provided for forming a conductive stud and line over a surface, comprising the steps of: forming at least a first layer of material over the region on the surface whereat the conductive stud and line are to be formed; forming a layer of dual image photoresist over the material; exposing the dual image potoresist to radiation so as to form at least first and second regions exhibiting different development characteristics; developing the first region so as to expose a portion of the material; removing the exposed portion of the material so as to define the position of one of the conductive line or stud; developing the second region to expose more of the material; and removing the newly exposed portion of material so as to define the position of the other of the conductive line or stud.

Abstract: The invention describes a photosensitive composition, a copying material prepared from this composition, and a process for the production of negative relief copies, in which a photosensitive composition or a photosensitive material, respectively, is used, that comprises a support and a photosensitive composition coated onto the support and comprising a photosensitive 1,2-quinonediazide or a photosensitive mixture, a binder that is soluble in aqueous-alkaline solutions and an s-triazine of the general formula I ##STR1## wherein R denotes akyl, allyl, alkoxy, alkoxycarbonyl, alkoxycarbonylakkenyl, each having from 1 to 4 carbon atoms in the alkyl or alkenyl group, aryloxy, halogen or a nitro group andn stands for 1 to 3.The material is exposed imagewise under a negative original, thereafter heated and, after cooling, exposed without an original or optionally under a positive original, then developed by means of an aqueous-alkaline developer and optionally baked.

Abstract: In a patterning method according to this invention, a surface region of a resist layer is solution-retarded by a developer, and, then, the resist layer is patterned. Therefore, a desired shape of a side wall of the resist layer may be obtained by varying a solubility of the resist layer, with the result that a resist pattern with the side wall orthogonal to a surface of the substrate or the overhung side may be formed.

Abstract: A process for the formation of an image comprises(i) applying to a substrate a layer of a liquid composition which comprises(A) a polymerizable material having, on average, more than one polymerizable acrylic group per molecule,(B) a first radiation-activated polymerization initiator for (A) and(C) a second radiation-activated polymerization initiator for (A), the initiator (B) being activatable by radiation of longer wavelength than that of radiation by which (C) is activatable,the composition being substantially free from polymerizable epoxide or vinyl ether groups when (B) or (C) is an aromatic onium salt,(ii) subjecting the composition to radiation having a wavelength at which one of (B) and (C) is activated but the other is not substantially activated, thereby polymerizing (A) such that the layer of liquid composition is solidified but remains curable,(iii) subjecting the solidified layer in a predetermined pattern to radiation having a wavelength at which the initiator not activated in stage (ii) is act

Abstract: A photopolymer layer is used as a radiation transparent phototool replacing a light blocking phototool in the photographic process of producing solder mask layers on printed wiring boards. Various simplification and energy reducing steps are introduced with off-contact photoprinting of patterns on liquid photopolymers having special characteristics that permit the polymerization of patterned outer skin areas partly through the thickness thereof with a controlled amount of radiation energy. This creates an in-situ surrogate phototool that permits further polymerization throughout the thickness of the layer with controlled quantities of unpatterned radiation energy. Photodiscrimination is provided by changes of photosensitivity in the layer transparent to radiation rather than by opaque imaging. Thus a first low energy photoflash through an off-contact phototool with uncollimated radiation creates on a liquid photopolymer surface two contrasting patterned areas of liquid polymer and polymerized skin.

Abstract: A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.

Abstract: Improved printing with polymers is achieved by interposing a liquid layer conforming to rough substrate surfaces and possibly exhibiting different characteristics from an outer surface polymer layer. This is particularly advantageous in printed wiring board (PWB) manufacture requiring solder mask coating. Thus, a two layer composite polymer coating is provided. One inner adhesive photopolymer layer is applied to the PWB in the liquid state, displacing air from PWB surface. The outer layer of the composite therefore can be epoxy, dry film or liquid polymer. Dry film thus carried on a thin plastic sheet may be overlaminated onto a liquid inner layer already on the substrate, without the need for a vacuum laminator to eliminate bubbles or a plasticizing heat step to conform the dry film to the surface.

Abstract: A light-sensitive image forming method using a recording element which comprises a recording layer on a support is disclosed. The recording layer contains at least two active components of a photopolymerizable composition such as a polymerizable compound and a polymerization initiator, both of which are essential for a photopolymerization reaction. The components are separated from each other by the shell of microcapsules in such manner that at least one component is contained in the microcapsules which are dispersed in the recording layer and the other component is arranged outside of the microcapsule. The image forming method comprises the steps of: heating the recording element to form the photopolymerizable composition in the recording layer; and imagewise exposing to light the recording element to imagewise polymerize the photopolymerizable composition.

Abstract: The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

Abstract: Compositions comprising an oligomer which (a) on average comprises at least one in-chain residue of the general formula ##STR1## wherein Ar.sup.1 is an aromatic group, R.sup.1 is hydrogen or a hydrocarbyl group, X is a group which activates Ar.sup.1 to electrophilic attack, and Y.sup.1 is an organic residue bearing a carboxyl substituent; and (b) has one or more pendant and/or terminal acyloxymethyl groups are described. They may be used in dental, electronic and electrical applications.

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow.

Abstract: Disclosed is a method in which pattern elements with predetermined wall profiles and/or lateral shapes, differing from the shapes of the respective pattern elements in an irradiation mask which is used, are formed in a photoresist layer. The method comprises a modification of a conventional photolithographic process, where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image in a continuous mode and or in steps during exposure.Also disclosed is an apparatus which includes means for shifting a substrate relative to a mask into the x- and or the y-direction or means between the mask and the substrate for shifting the path of the beam relative to the substrate, and means for controlling the shifting means.The method--especially in connection with the apparatus--allows formation of reproducible photoresist patterns with a great variety of differently formed, wall profiles and/or lateral shapes.

Abstract: Disclosed is a method of forming a resist pattern by exposing a novolak type positive photoresist to ultraviolet light in a pattern, irradiating the entire surface with far ultraviolet light with wavelength of 200 to 320 nm in an atmosphere with inert gas partial pressure ratio of 90% or more, and developing it. According to this method, a specific gradient of solubility in developing solution becoming higher from the surface toward the depthwise direction is provided, and a contrast value of twice as high as in the conventional method can be obtained, and a resist pattern of high aspect ratio is formed.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Abstract: A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of:(a) forming a planarizing layer resistant to silicon uptake on a substrate;(b) providing a positive-working photoresist composition containing --OH or --NH-- groups over the planarizing layer,(c) imagewise exposing the resist to activating radiation,(d) developing the exposed resist,(e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: ##STR1## wherein: X.sup.1 and X.sup.2 are individually chloro or ##STR2## wherein R.sup.3 and R.sup.4 are individually H or alkyl; andR.sup.1 and R.sup.2 are individually H or alkyl; and(f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.

Abstract: A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resist layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photon (e.g. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Abstract: Orifices, cavities or spaces which are formed when printing plates are mounted on a plate cylinder are closed and/or sealed by means of a pasty, photocurable sealing or closing compound consisting of one or more photopolymerizable, ethylenically unsaturated low molecular weight compounds (a), one or more polymeric binder (b) which are compatible with the said compounds of component (a), one or more photopolymerization initiators (c) and one or more finely divided oxidic fillers (d) which, when mixed with components (a) to (c), give mixtures which are transparent to long-wavelength UV light. After it has been applied, this sealing or closing compound is cured by exposure and can then be mechanically processed. The process is particularly suitable for closing and/or sealing orifices, cavities or spaces in gravure printing plates mounted on plate cylinders.

Abstract: A relief flexographic printing plate is prepared by image-wise exposure of the "printing face" of a layer of photocurable polymer through a negative 7 and image-wise back exposure of the layer 4 through a support sheet 3 and a positive 6 of the image to be printed, thereby selectively curing the floor regions 9 of the printing plate in register with the uncured areas 8 left in the printing face of said layer.Preferably a further non-selective back exposure operation is carried out for additionally curing the floor regions.

Abstract: The invention relates to an automatic machine for the reversal processing of lithographic printing plates which are required to be exposed overall after heating. The method and apparatus of the invention provide that the exposure be effected while the plates are being conveyed through water in a shallow bath.

Abstract: The present invention tunes and stabilizes a volume hologram by migrating an ultraviolet sensitive epoxy resin into the hologram with a solvent, causing the volume hologram to swell and shift its center frequency. When a sufficient shift has occurred, the epoxy resin is exposed to ultraviolet light, setting the resin and preventing further change. An appropriate resin-solvent solution can be arrived at for different media by slowly changing the ratio of solvent to resin and observing the end product until the desired frequency shift and broadbanding is observed with visually or with a spectrometer.

Abstract: A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained.The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.

Abstract: A self-developing radiation resist having extremely high sensitivity to energetic radiation, which resist is resistant to dry etching. The energetic radiation includes electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation. The resist is substantially amorphous; it has extremely high values of G.sub.s and G.sub.m, whereG.sub.s =number of main chain scission/100 electron volts absorbedandG.sub.m =number of monomers liberated/100 electron volts absorbed.The resist is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer that forms the resist includes an oxygen heteroatom linear chain organic polymer having haloalkyl substituents and is adapted to depolymerize in the absence of photoinitiators.

Abstract: A dry film for forming a solder mask includes a cover sheet, a photoimageable composition layer which is curable to form a solder mask and a top coat interposed between the cover sheet and the photoimageable composition layer which is selectively adherent to the photoimageable composition layer. The dry film is applied to a surface of a printed circuit board with a minor portion of the area of the photoimageable composition layer tacked to the printed circuit board. The cover sheet is peeled away. With heat and vacuum, the photoimageable composition layer is laminated to the irregular surface of the printed circuit board, conforming the photoimageable composition layer to the contours thereof and leaving the top coat as a protective covering over the photoimageable composition layer. The photoimageable composition layer is exposed to patterned actinic radiation, developed and cured to form a hard, permanent solder mask.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of the positive photoresist empolying ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image, placed in a chamber filled with gas of lower pressure than 1 atmospheric pressure using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the discharge lamp.

Abstract: Image reversal is controlled to occur in lithographically defined regions of a positive photoresist. In that way, selective reversal of a simple holographic grating is achieved to obtain 180-degree phase shifts within lighographically defined regions of the grating. Such a phase-shifted grating is useful, for example, to provide distributed feedback in a semiconductor laser designed for single-longitudinal-mode operation.

Abstract: Ultraviolet radiation process applies to manufacture to semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor's wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatmnent of the positive photoresist employing ultraviolet irradiation by preventing the deformation of the positive photoresist which is caused by the light radiated form the microwave-excited electrodeless discharge lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image placed under lower or pressure than 1 atmospheric pressure, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the microwave-excited electrodeless discharge lamp.

Abstract: A process for producing a printed circuit board, which comprises the steps of forming a layer comprising a photosensitive resin composition on an insulating substrate having on its surface an adhesive layer adherent to a metal being subsequently plated thereon; exposing said layer comprising a photosensitive resin composition to an actinic radiation in a manner so as to form on said layer a negative pattern of a conductor circuit pattern and to semicure said negative pattern to an extent sufficient to keep it from erosion by a plating solution; developing by dissolving away with a solvent the uncured areas not exposed to said actinic radiation, thereby to form a plating resist on the areas of said negative pattern; chemically plating said conductor circuit pattern areas not covered with said plating resist, thereby to form a conductor circuit; and carrying out a curing treatment to cure completely said resist.

Abstract: Ultraviolet radiation process applied to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, enabling effective treatment of the developed positive photoresist image employing ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by exposing it to high ultraviolet radiation at the beginning of exposure. This method employs ultraviolet irradiation, in which the developed positive photoresist image placed in gas of a lower atmospheric pressure is exposed to ultraviolet radiation of low intensity at the beginning of exposure, and then exposed to ultraviolet radiation, the intensity of which increases little by little or in steps.

Abstract: A process for forming a multi-level positive working photosensitive element. One forms a composition containing an alkali soluble resin, an o-quinonediazide compound and an in-situ generated acid catalyzed crosslinker in a solvent mixture. After coating on a substrate, drying and partially cross-linking the first layer, a second positive working light sensitive layer is applied. Each light sensitive layer is activated by u.v. radiation in different parts of the spectrum. The top layer is imagewise exposed and developed to form a mask. The second layer is flood exposed through this mask and developed. Each development is conducted with an aqueous alkaline solution.

Abstract: A process for selectively hardening a surface layer of a polymeric photoresist to make such surface layer opaque and insoluble in photoresist carrier solvents, where such selectivity is coextensive with the polymeric/monomeric pattern created in the photoresist. Representative hardening processes include controlled exposure to certain gas plasmas, ion bombardment, or irradiation by ultraviolet radiation of chosen wavelength range. The selectively hardened polymeric regions act as a barrier to the carrier solvent in which the polymer film is laid down and to the developer subsequently employed to remove the monomeric regions. The hardened polymeric regions further exhibit an actinic radiation barrier property preventing radiation depolymerization. In one form the process may be used in a two-layer photoresist structure, where the pinhole-covering thicker second layer is laid down and exposed before developing the monomeric regions of the thinner first layer.

Abstract: Indicia, provided on a specularly reflective surface, are formed by a dot surface relief pattern featuring polygonal surfaces spaced apart to enhance scattering. The spacing of dots is characterized by a pitch in the range of 8 to 50 microns with a dot size of less than 50 microns and usually about one-half of the pitch dimension. In one embodiment, the dots may be anisotropically etched forming mesas, enhanced by gemlike polygonal facets which provide good optical contrast relative to the background surface.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductors wafers.A method of treating photoresist materials applied in order to enhance the thermal stability of the photoresist film on semiconductor wafer employing heating and ultraviolet irradiation, which meets the demand for improvement in heat resistance and plasma resistance of the photoresists. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature, and the temperature of the photoresist is raised in proportion as the flow temperature of the photoresist is increased by exposing the photoresist to ultraviolet radiation and/or heating.

Abstract: An ultraviolet radiation method of treating positive photoresist materials to enhance the thermal stability of positive photoresist film on a semiconductor wafer employing heating and ultraviolet irradiation. The process improves the heat-resistance and plasma-resistance of the photoresist image. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature of the photoresist, and the temperature of the developed positive photoresist image is raised in proportion as the flow temperature of said photoresist image is increased by exposing the photoresist placed in gas of a lower atmospheric pressure to ultraviolet radiation and/or heating.

Abstract: A photosensitive article which comprises a substrate, a first light sensitive layer on the substrate, a polysulfone layer and a second light sensitive layer. The first light sensitive layer preferably comprises a depolymerizable polymethyl methacrylate polymer and the second light sensitive layer preferably comprises on o-quinone diazide in admixture with a water insoluble, aqueous alkaline soluble binder resin.

Abstract: The disclosure relates to a method for low temperature (less than 120 degrees C.) hardening of photoresist pattern by providing a high power light beam consisting of light having a wavelength of about 300 nanometers and above which leads to crosslinking throughout the resist. A hot plate constant temperature (less than 120 degrees C.) is optionally used to accelerate the crosslinking reaction, thus incrasing throughput.

Abstract: A method of forming resist pattern is disclosed. After the resist pattern is formed, an ion beam is irradiated on the resist pattern. The energy of the ion beam is controlled in every segments of the resist pattern by a predicted deviation data stored beforehand, so that the unfavorable deviation of the resist pattern is minimized.

Abstract: An improved process for detackifying imagewise exposed and solvent-developed photopolymeric flexographic relief printing plates wherein an aprotic organic solvent is applied to the surface of the printing plate prior to irradiation with wavelengths in the 200 to 300 nm range.

Abstract: A negative type electron beam sensitive resist film of CMS (chloro-methyl poly-styrene) is developed in a dry environment without using a vacuum system. The resist film is selectively exposed to an electron beam to form a latent image of a desired pattern therein and, then, subjected to irradiation by deep UV having a spectral component of 2537 .ANG. or shorter in an oxidizing gas such as atmospheric air. The average thickness decrease speeds during the dry development are 12 .ANG./min and 300 .ANG./min respectively for the portions exposed and unexposed to the electron beam, revealing a contrast ratio of 100 to 4 in terms of the remaining resist film thickness. A film of PGMA (poly-glycidyl metha-acrylate), and other negative type electron beam sensitive resists, may also be developed by the same method.

Abstract: Although the positive-working photoresist composition comprises a phenolic novolac resin as the film-forming component and a known photosensitizing compound as in conventional compositions, the novolac resin is prepared from a specific mixture of two classes of phenolic compounds including, one, phenol, cresols and/or resorcinol and, the other, one or more of the phenolic compounds having a nucleus-substituting group selected from allyloxy, allyloxymethyl, allyl dimethyl silyl, 2-(allyl dimethyl silyl) ethoxy, cinnamoyl, acryloyl and methacryloyl groups. By virtue of this unique combination to give the phenolic moiety in the novolac resin, the photoresist composition has markedly improved heat resistance as well as stability against plasma in dry etching so that the composition can give a patterned photoresist layer with extreme fineness having high fidelity to the mask pattern.

Abstract: Printed circuit boards having a plurality of circuit layers are produced on a copper-clad substrate by first forming a pattern in a desired configuration to produce the first layer of the printed circuit board, then covering it with an energy-sensitive material comprising a rubber modified epoxy resin, an acrylated epoxy resin and a viscosity modifier; the energy-sensitive material is delineated in a desired pattern and developed to uncover portions of the underlying metallization pattern and the entire substrate is then blanket cured to produce a rigid layer having openings in appropriate places; the openings are metallized and a second copper pattern is produced on the cured polymer by conventional metallization and lithographic techniques. If desired, the process is repeated until a suitable number of copper patterned levels are obtained.

Abstract: An optical recording method comprises the steps of:(A) irradiating a radiation corresponding to a recording information on an optical recording medium having a recording layer containing a diacetylene derivative and at least one selected from the group (hereinafter called the group B) consisting of azulenium salt compounds, pyrylium dyes, diene compounds, croconic methine dyes and polymethine compounds, thereby forming a latent image; and(B) irradiating a radiation on the recording medium having said latent image formed thereon to thereby visualizing said latent image.

Abstract: A positive acting photoresist system including a hydrophobic blocked polymer can be made to function in a negative sense (or tone) in what is known as an "image reversal" process, which may be summarized as follows:(1) After being exposed to UV radiation through a mask pattern to produce photogenerated acid, a photoresist coated wafer is treated with a gaseous base such as ammonia. The base reacts with photogenerated acid to produce a salt, effectively preventing deblocking of the polymer.(2) The wafer then is exposed to a vacuum to remove any excess base.(3) The wafer is then flood-exposed (i.e., no mask is used) with UV light. This produces acid in the previously masked-over areas. The sensitizer has already been largely destroyed in the original image area and so little acid is produced there.(4) The wafer is then baked to deblock the polymer in the area not exposed in step (1) and developed in aqueous alkali. The resulting image is the inverse of the original mask pattern.

Abstract: A silylation method wherein a resist coating applied on a substrate is reacted with an organic silane compound under the irradiation of a deep ultraviolet ray to render regions of the resist coating durable to oxidative ion etching, whereby a fine pattern is formed. The resist coating includes a layer of an active polymer which is reactive with an organic silane compound under the irradiation of a deep ultraviolet ray to be combined with silyl groups, and a layer of an inert polymer which is not reactive with an organic silicone compound under the irradiation of a deep ultraviolet ray. A desired pattern is formed with the resist coating by ordinary lithographic technique, and then the active polymer layer of the pattern is allowed to contact with an organic silane compound while being irradiated with a deep ultraviolet ray to introduce silyl groups into the active polymer layer of the pattern so as to form masking regions durable to oxidative ion etching.

Abstract: Photographic images may be produced on a backing such as paper and polyester sheets, from photographic negatives which encompass line rendering, design comps, copy, complex color separation or the like with water-based varnishes and pigments, the resulting images closely resembling, if not exactly, the same image in its commercially printed form. Thus all aspects of color proofs produced by this invention provide greatly improved predictability as to the appearance of the final printed job, with a further improvement of cost savings over conventional techniques of preparing color proofs. Also, said proofing method can be used to provide a "transfer" so that one may transfer the colored image or images to a more suitable or required backing.