Abstract: Electrochemically grained and anodized aluminum supports are treated with a post-treatment coating solution containing a polymer derived at least in part from vinyl phosphonic acid and phosphoric acid. This post-treated support is useful as substrates in the preparation of lithographic printing plate precursors. The post-treatment substrate treatment enables wide latitude in manufacturing and compatibility with silicate-free developers to achieve negligible background staining and oxide attack.

Abstract: Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminum (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it. The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).

Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: In one example embodiment, a method fabricates microbeads, which can supply a bead set containing a various types of microbeads and having distinct populations of the respective types of microbeads. In one example embodiment, the method includes forming a hydrophilic layer made of a hydrophilic organic material on a substrate. In one example embodiment, the method includes laminating on the hydrophilic layer a thin film capable of being peeled off in the form of microbeads. In one example embodiment, the method includes forming the thin film in a given configuration by photolithography. In one example embodiment, the method includes solid-phasing a given substance on the post-formed thin films. In one example embodiment, the method includes peeling off the post-formed thin films, which have been solid-phased with the substance, from the substrate along with at least a part of the hydrophilic layer to obtain microbeads.

Abstract: An inventive method includes the steps of: loading a fiber product in an appropriate form into a treatment vessel; wetting the fiber product; forcibly circulating an ozone-containing liquid in contact with the wetted fiber product to thereby bleach the fiber product; and forcibly circulating an ozone decomposing chemical agent liquid in contact with the ozone-treated fiber product to decompose ozone. This method ensures efficient bleaching of the fiber product with the ozone. Further, the method is advantageous in that the resulting bleached fiber product is less liable to be yellowed over time.

Abstract: Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

Abstract: A plurality of reticles for printing structures in the same lithography level includes an alignment structure pattern within a same relative location in each reticle. Each set of process segmentations in a grating has a reticle segmentation pitch, which is common across all gratings in the plurality of reticles. Within each pair of alignment structure patterns that occupy the same relative location in any two of the plurality of reticles, the process segmentations in one reticle are shifted relative to the process segmentations in the other reticle by a fraction of a reticle segmentation pitch. After printing all patterns in the plurality of reticles, a composite printed process segmentation structure on the substrate includes printed segmentation structures that are spaced by 1/n times the printed segmentation pitch. The pattern for the next level can be aligned to the composite printed process segmentation structure in a single alignment operation.

Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: It is therefore an object of the present invention to provide a forming method for a resist pattern to reduce a resist residue in forming the resist pattern on a step whose gradient angle is equal to 90 degrees or more. A forming method for a resist pattern to reduce a resist residue on a step is provided, the method comprising: forming resist film with coating resist containing photo-acid-generator on a step formed on a substrate, where gradient angle of the step is equal to 90 degrees or more, exposing said resist film and generating acid from said photo-acid-generator.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.

Abstract: Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including; a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.

Abstract: Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide.

Abstract: There is disclosed a patterning process comprises at least (1) a step of forming an organic underlayer film on a substrate and then forming a photoresist pattern on the organic underlayer film, (2) a step of attaching an alkaline solution containing an alkaline substance onto the photoresist pattern and then removing the excess alkaline solution, (3) a step of applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern to form a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns, and (4) a step of removing the uncrosslinked siloxane polymer and the photoresist pattern. There can be provided a patterning process capable of forming a further finer pattern simply and efficiently and with a high practicability applicable to semiconductor manufacturing.

Abstract: A method for making printed circuits and printed circuit boards which includes coating a non-metallized substrate and plating an image of a desired circuit design directly onto the coated substrate without the need to image the circuit design on an intermediate silver halide polyester film or diazo and utilizing existing imaging, developing and etching subtractive techniques in conventional printed circuit board processing. One exemplary embodiment of the method for making printed circuit boards includes coating a non-metallized substrate with a palladium based material including a ferric based solution combined with palladium.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.

Abstract: Positive-working imageable elements having improved sensitivity, high resolution, and solvent resistance are prepared using a water-insoluble polymeric binder comprising vinyl acetal recurring units that have pendant hydroxyaryl groups, and recurring units comprising carboxylic acid aryl ester groups that are substituted with a cyclic imide group. These imageable elements can be imaged and developed to provide various types of elements including lithographic printing plates.

Abstract: A direct emulsion process for making printed circuits and printed circuit boards which includes coating a non-metallized substrate with a solution which creates a light sensitive surface on the substrate, imaging the coated substrate with a circuit design, developing the imaged substrate, and directly plating the developed image onto the coated substrate. Coating solutions which work particularly well in this process include a ferric oxalate and palladium emulsion or a silver based emulsion.

Abstract: A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.

Abstract: As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract: In a thinner composition and a method of forming a photosensitive film, the thinner composition includes about 50 to about 90% by weight of propylene glycol monomethyl ether acetate, about 1 to about 20% by weight of propylene glycol monomethyl ether, about 1 to about 10% by weight of ?-butyrolactone, and about 1 to about 20% by weight of n-butyl acetate. The thinner composition may have a proper volatility and an improved ability to dissolve various types of photosensitive materials, and thus the thinner composition may be usefully employed in an edge bead rinse process, a rework process or a pre-wetting process.

Abstract: An exemplary method for manufacturing mechanical shutter blades using a beryllium-copper substrate is provided. The method includes providing a beryllium-copper alloy substrate having a first surface and a second surface opposite to the first surface; respectively applying a first and second photoresist layers onto the first and second surfaces; exposing and developing the first and second photoresist layers, thereby first portions of the first photoresist layer and second portions of the second photoresist layer are left on the first and second surfaces while an unwanted portion of the substrate is exposed to an exterior, the first portions are aligned with the second portions; removing the unwanted portion of the substrate using a wet etching process; and removing the first and second portions from the remaining portion of the substrate.

Abstract: A method and system for patterning a substrate using a dual-tone development process is described. The method and system comprise using a resist material having a polymer backbone with a plurality of protecting groups attached thereto to improve process latitude and critical dimension uniformity for the dual-tone development process.

Abstract: Described herein are processing techniques for fabrication of stretchable and/or flexible electronic devices using laser ablation patterning methods. The laser ablation patterning methods utilized herein allow for efficient manufacture of large area (e.g., up to 1 mm2 or greater or 1 m2 or greater) stretchable and/or flexible electronic devices, for example manufacturing methods permitting a reduced number of steps. The techniques described herein further provide for improved heterogeneous integration of components within an electronic device, for example components having improved alignment and/or relative positioning within an electronic device. Also described herein are flexible and/or stretchable electronic devices, such as interconnects, sensors and actuators.

Abstract: A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to the hard mask, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then performing developing, forming a first pattern by etching the hard mask using the first resist pattern as a mask, forming a second resist film by applying a chemically amplified positive silicon-based resist composition to the first pattern and the underlayer film, forming a second resist pattern by selectively exposing the second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching the underlayer film using the first pattern and the second resist pattern as a mask.

Abstract: A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.

Abstract: A method for forming a film pattern includes applying a water-soluble photosensitive resin on a substrate, exposing the photosensitive resin to light, developing the photosensitive resin with a developer, after developing the photosensitive resin, depositing a material for the film pattern on the substrate, and, after depositing the material for the film pattern, removing photosensitive resin remaining on the substrate with a remover. The remover and the developer include the same solute, and a concentration of the solute in the remover is higher than that in the developer.

Abstract: A method for developing a photoresist includes applying a first developer to the photoresist to remove non-cross-linked areas of the photoresist, and applying a second developer to the photoresist to remove remaining non-cross-linked areas of the photoresist, wherein the first developer and the second developer differ in their compositions.

Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

Abstract: A method of processing an on-press developable lithographic printing plate with ink and/or fountain solution is described. The plate comprises on a substrate a photosensitive layer which is either capable of hardening (negative-working) or solubilization (positive-working) upon exposure to a laser, the non-hardened or solubilized areas of the photosensitive layer being soluble or dispersible in ink and/or fountain solution. The plate is exposed with a laser, heated to an elevated temperature, and then developed with ink and/or fountain solution on a lithographic press. The laser exposed plate is preferably heated by passing through a heating device or while mounted on a lithographic press before on-press development.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: A metal photoetching product comprising at least one large cavity of minor axis W1S, major axis W1L and depth D1 in a surface of the product, wherein one or more cavities are included inside at least one of the at least one large cavity, and a smallest hole among the cavities has minor axis of W2S, major axis W2L, and depth D2; and the product satisfies the following dimensions, D1+D2=plate thickness D, 0.02 mm?D?2 mm, 0.4×D<W1S<D, and 0.2×D<W2S<0.8×D.

Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.

Abstract: A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.

Abstract: Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.

Abstract: A circuit pattern having a size finer than a half of a wavelength of an exposure beam is transferred on a semiconductor wafer plane with an excellent accuracy by means of a mask whereupon an integrated circuit pattern is formed and a reduction projection aligner. The accuracy of transferring the circuit pattern on the semiconductor wafer is improved by synergic effects of super-resolution exposure, wherein a mask cover made of a transparent medium is provided on a pattern side of the integrated circuit mask so as to suppress the aberration of reduction projection alignment, and a method of increasing the number of actual apertures of the optical reduction projection lens system provided with the wafer cover made of the transparent medium on a photoresist side of the semiconductor wafer to which planarizing process is performed.

Abstract: The present invention provides a method for manufacturing an electroluminescence element that has a light emitting layer containing a quantum dot and exhibits excellent life characteristics. In the method, patterning of the light emitting layer can be stably performed by a lift-off method. A photoresist layer is formed on a substrate having a first electrode layer. The photoresist layer is then exposed, developed, and patterned to ensure that a portion of the photoresist layer, which is located in a light emission area, is removed. A coating liquid containing a quantum dot having a silane coupling agent attached to the surface thereof is coated on the resultant substrate having the patterned photoresist layer and cured to form a light emitting layer. The remaining photoresist layer is then removed to lift off a portion of the light emitting layer, which is present on the photoresist layer.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.

Abstract: The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.