Finishing Or Perfecting Composition Or Product Patents (Class 430/331)
  • Patent number: 9725683
    Abstract: Anionic surfactants have a formula: RfSO2N(H)—CH2CH(CH3)OH; or RfSO2N(H)—(CH2CH2O)xH, where x is an integer from 2-6. Rf is a fluoroalkyl group having 3 to 8 carbon atoms. Neutral surfactants having a formula: RfSO2N[CH2CH(CH3)OH]2;??(a) RfSO2N[CH2CH(CH3)OH][(CH2CH2O)nH], where n is an integer from 1-6;??(b) RfSO2N(R)[(CH2CH2O)pH], where p is an integer from 2-6, and R is an alkyl group having 1 to 4 carbon atoms; or??(c) RfSO2N[(CH2CH2O)qH][(CH2CH2O)mH], where q is an integer from 1-6 and m is an integer from 3-6. Rf is a fluoroalkyl group having 3 to 8 carbon atoms.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: August 8, 2017
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: William M Lamanna, Patricia M. Savu, Jason M Kehren
  • Patent number: 9612536
    Abstract: A method for lithography patterning includes forming a material layer over a substrate; exposing a portion of the material layer to a radiation; and removing the exposed portion of the material layer in a developer, resulting in a patterned material layer. The developer comprises an organic solvent and a basic solute, wherein the organic solvent is more than 50% of the developer by weight. In an embodiment, the developer further comprises water that is less than 50% of the developer by weight.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Yu Liu, Ching-Yu Chang
  • Patent number: 9588429
    Abstract: Lithographic printing plates are formed by imagewise exposing a single-layer or dual-layer positive-working lithographic printing plate precursor. The precursor has an outermost ink receptive layer containing a phenolic resin. The exposed precursor can be processed using a silicate-free developer composition having a pH of at least 12.5. This composition also includes an alkali metal hydroxide; a coating protecting agent that is a quaternary ammonium salt or phosphonium salt, or a mixture thereof, and a moderator for the coating protecting agent that is represented by the following general formula (I): wherein m is at an integer of at least 1 and up to and including 10 and M represents one or more counterions sufficient to balance the negatively-charged sulfonate groups.
    Type: Grant
    Filed: September 3, 2015
    Date of Patent: March 7, 2017
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Jianbing Huang, Gerhard Hauck, Celin Savariar-Hauck, Andrea Pauls, Dietmar Frank, Oliver Piestert
  • Patent number: 9552987
    Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: January 24, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuichiro Miyata, Keiichi Tanaka, Kenichi Ueda, Takahiro Shiozawa
  • Patent number: 9436093
    Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactam under the action of acid in a C7-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: September 6, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masayoshi Sagehashi
  • Patent number: 9396926
    Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: July 19, 2016
    Assignee: FUJIFILM Corporation
    Inventors: Atsushi Mizutani, Hideo Fushimi, Tomonori Takahashi, Kazutaka Takahashi
  • Patent number: 9335635
    Abstract: A black-and-white silver halide developing solution and a silver halide solution physical developing solution are used in sequence to provide electrically-conductive film elements from conductive film element precursors that contain photosensitive silver halide emulsions on one or both supporting sides of a transparent substrate. The two developing solutions have unique combinations of developing agents and other essential components to provide complete development of imagewise exposed silver halide to form highly electrically-conductive silver metal in predetermined patterns.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: May 10, 2016
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Michael Phillip Youngblood, Thomas Edward Lowe
  • Patent number: 9289802
    Abstract: A method of cleaning a lithography apparatus using an aerosol spray is described. The spray from the aerosol is contained in a space.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: March 22, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Anthonius Martinus Cornelis Petrus De Jong, Hans Jansen, Josephus Cornelius Johannes Antonius Vugts, Jacques Cor Johan Van Der Donck, Teunis Cornelis Van Den Dool, Gerrit Oosterhuis
  • Patent number: 9243218
    Abstract: Methods for using improved stripper solutions having dimethyl sulfoxide; a quaternary ammonium hydroxide; an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, with the amino and hydroxyl substituents being attached to two different carbon atoms; and a surfactant. Some formulation can additionally contain a secondary solvent. The stripper solutions are effective for removing photoresists from substrates, and typically have freezing points below about +15° C. and high loading capacities.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: January 26, 2016
    Assignee: Dynaloy, LLC
    Inventors: Michael T. Phenis, Lauri Kirby Kirkpatrick, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
  • Patent number: 9234162
    Abstract: Embodiments of the disclosure are directed to a stable cleaning composition comprising: a chelating agent, a low-foaming, temperature- and alkaline-stable surfactant, and water. Other embodiments relate to the methods of preparing the stable cleaning compositions and the methods of their use. The stable cleaning composition described here is a low cost cleaning composition for use either alone or as an additive to a cleaning agent.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: January 12, 2016
    Assignee: LMC ENTERPRISES
    Inventors: Kishor Pathak, Marija Rajovic-Simovic
  • Patent number: 9070636
    Abstract: A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: June 30, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Patent number: 9040225
    Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: May 26, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Ranee W. Kwong, Sen Liu
  • Patent number: 9029067
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: May 12, 2015
    Assignee: JSR Corporation
    Inventors: Gouji Wakamatsu, Masafumi Hori, Kouichi Fujiwara, Makoto Sugiura
  • Publication number: 20150125795
    Abstract: The present invention provides a novel low pH developing solution which does not contain an inorganic strong alkali component.
    Type: Application
    Filed: June 27, 2013
    Publication date: May 7, 2015
    Inventor: Yasushi MIYAMOTO
  • Patent number: 9023586
    Abstract: The invention provides a positive resist composition, wherein a polymer compound having the weight-average molecular weight in the range of 1,000 to 500,000 and comprising a repeating unit having a hydrogen atom in a carboxyl group and/or in a phenolic hydroxy group therein been substituted by an acid-labile group and a repeating unit “a” having a cyclopentadienyl complex shown by the following general formula (1) is used as a base resin therein. There can be a positive resist composition having not only small edge roughness (LER and LWR) while having a higher resolution than conventional positive resist compositions, but also a good pattern form after exposure and an extremely high etching resistance, especially a positive resist composition using a polymer compound suitable as a base resin for a chemically amplifying resist composition; and a patterning process.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: May 5, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Jun Hatakeyama
  • Patent number: 8993218
    Abstract: One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: March 31, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Li Huai Yang, Chien-Mao Chen
  • Patent number: 8986918
    Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Sen Liu
  • Patent number: 8986921
    Abstract: A lithographic material stack including a metal-compound hard mask layer is provided. The lithographic material stack includes a lower organic planarizing layer (OPL), a dielectric hard mask layer, and the metal-compound hard mask layer, an upper OPL, an optional anti-reflective coating (ARC) layer, and a photoresist layer. The metal-compound hard mask layer does not attenuate optical signals from lithographic alignment marks in underlying material layers, and can facilitate alignment between different levels in semiconductor manufacturing.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Daniel C. Edelstein, Bryan G. Morris, Tuan A. Vo, Christopher J. Waskiewicz, Yunpeng Yin
  • Patent number: 8980539
    Abstract: A developer includes an organic solvent and a nitrogen-containing compound. The developer is configured to develop a resist film to form a negative resist pattern. The resist film is formed using a photoresist composition. The photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a structural unit including an acid-labile group.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: March 17, 2015
    Assignee: JSR Corporation
    Inventors: Taiichi Furukawa, Hirokazu Sakakibara
  • Patent number: 8956802
    Abstract: Provided is a negative type pattern forming method that satisfies high sensitivity, high resolution, good roughness and good dry etching resistance at the same time, and further, has a good development time dependency, the method including (i) forming a film by a chemical amplification resist composition containing (A) a fullerene derivative having an acid-decomposable group, (B) a compound generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) exposing the film, and (iii) developing the exposed film by using an organic solvent-containing developer.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 17, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Kaoru Iwato
  • Patent number: 8956807
    Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: February 17, 2015
    Assignee: JSR Corporation
    Inventors: Hiromitsu Tanaka, Kazunori Takanashi, Shinya Minegishi, Takashi Mori, Tomoaki Seko, Jyunya Suzuki
  • Patent number: 8945822
    Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 3, 2015
    Assignee: Fujitsu Limited
    Inventors: Koji Nozaki, Miwa Kozawa
  • Publication number: 20150017590
    Abstract: A coating agent for forming a fine pattern and a method for forming a fine pattern using the coating agent, in which the coating agent allows a resist pattern to be favorably fined, and can form a fined pattern having a suppressed deviation of CD. A coating agent for forming a fine pattern including (A) a water-soluble polymer is combined with a compound in which the compound has an alkyl group having 8 or more carbon atoms bound to a nitrogen atom, and is combined with 4 moles or more of ethylene oxide and/or propylene oxide with respect to 1 mole of a nitrogen atom bound with the alkyl group as (B) a nitrogen-containing compound.
    Type: Application
    Filed: July 9, 2014
    Publication date: January 15, 2015
    Inventors: Tomoya Kumagai, Takumi Namiki
  • Patent number: 8932793
    Abstract: The present invention relates to new polymers that contain phenolic groups spaced from a polymer backbone and photoacid-labile group. Preferred polymers of the invention are useful as a component of chemically-amplified positive-acting resists.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: January 13, 2015
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: James F. Cameron
  • Patent number: 8932803
    Abstract: A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: January 13, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Kazuhiro Katayama
  • Publication number: 20150004547
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Application
    Filed: September 16, 2014
    Publication date: January 1, 2015
    Applicant: JSR Corporation
    Inventors: Gouji WAKAMATSU, Masafumi HORI, Kouichi FUJIWARA, Makoto SUGIURA
  • Publication number: 20140377706
    Abstract: An aqueous solution containing 0.1-20 wt % of a substituted choline or thiocholine hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in an ammonium hydroxide-containing aqueous solution.
    Type: Application
    Filed: May 27, 2014
    Publication date: December 25, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • Patent number: 8916338
    Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: December 23, 2014
    Assignee: Eastman Chemical Company
    Inventors: Michael Wayne Quillen, Dale Edward O'Dell, Zachary Philip Lee, John Cleaon Moore, Edward Enns McEntire, Spencer Erich Hochstetler, Richard Dalton Peters, Rodney Scott Armentrout, Darryl W. Muck
  • Patent number: 8916330
    Abstract: The present invention provides a resist composition giving a resist pattern excellent in CD uniformity and focus margin. A chemically amplified photoresist composition comprises a resin (A) and an acid generator (B), and the resin (A) contains, as a part or an entirety thereof, a copolymer (A1) which is obtained by polymerizing at least: a (meth)acrylic monomer (a1) having C5-20 alicyclic hydrocarbon group which becomes soluble in an aqueous alkali solution by the action of an acid; a (meth)acrylic monomer (a2) having a hydroxy group-containing adamantyl group; and a (meth)acrylic monomer (a3) having a lactone ring, and the copolymer (A1) has a weight-average molecular weight of 2500 or more and 5000 or less, and a content of the copolymer (A1) is not less than 50 parts by mass with respect to 100 parts by mass of the resin (A).
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: December 23, 2014
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Koji Ichikawa, Takashi Hiraoka
  • Publication number: 20140370441
    Abstract: An aqueous solution containing 0.1-20 wt % of a cyclic ammonium hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in a cyclic ammonium hydroxide-containing aqueous solution.
    Type: Application
    Filed: May 27, 2014
    Publication date: December 18, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • Publication number: 20140370446
    Abstract: The present invention provides a composition for developing a photoresist containing a carboxyl group (—COOH) and a method of developing a photoresist using the composition. The composition includes: a first solution including a salt containing a monovalent cationic component; and a second solution including a salt containing a bivalent cationic component. The composition for photoresist development is advantageous in that the developing depth of a photoresist can be controlled, and the developed surface of a photoresist is flat, thereby enabling the photoresist to be developed to realize precise three-dimensional packaging.
    Type: Application
    Filed: February 4, 2014
    Publication date: December 18, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Chang Bo Lee, Chang Sup Ryu, Dae Jo Hong, Hyo Seung Nam
  • Patent number: 8911929
    Abstract: An aqueous solution containing 0.1-10 wt % of a guanidine is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a coating, baking, exposing the coating to high-energy radiation, and developing the exposed coating in a guanidine-containing aqueous solution.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: December 16, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Jun Hatakeyama
  • Patent number: 8911927
    Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: December 16, 2014
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Michael K. Gallagher, Gerald B. Wayton, Gregory P. Prokopowicz, Stewart A. Robertson
  • Patent number: 8906596
    Abstract: The present invention resides in a method of providing a mark on a surface of a metal component, where the mark comprises a symbol (301) representing a first entity of information and the method comprises a step of laser marking, in which a controllable laser beam is used to form the symbol (301) from two or more separate line segments (33 1-334), each line segment (33 1.334) having at least one point of overlap with another line segment. According to the invention, the method further comprises a step of embedding a second entity of information within the mark by modifying a sequence in which the two or more separate line segments (33 1-334) are formed.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: December 9, 2014
    Assignee: Aktiebolaget SKF
    Inventors: John Van De Sanden, Hendrik Johannes Krock, Hendrik Anne Mol
  • Patent number: 8895231
    Abstract: A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator having both a 9-fluorenylmethyloxycarbonyl-substituted amino group and a carboxyl group onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising an alcohol and an optional ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: November 25, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Kazuhiro Katayama
  • Patent number: 8889339
    Abstract: A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 18, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Toru Tsuchihashi, Tadateru Yatsuo, Koutarou Takahashi, Tomotaka Tsuchimura
  • Patent number: 8883646
    Abstract: The present disclosure is directed to a process for the fabrication of a semiconductor device. In some embodiments the semiconductor device comprises a patterned surface. The pattern can be formed from a self-assembled monolayer. The disclosed process provides self-assembled monolayers which can be deposited quickly, thereby increasing production throughput and decreasing cost, as well as providing a pattern having substantially uniform shape.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: November 11, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Min Huang, Chung-Ju Lee, Chien-Hua Huang
  • Patent number: 8883394
    Abstract: The present invention provides a resist composition giving a resist pattern excellent in CD uniformity and focus margin. A chemically amplified photoresist composition comprises a resin (A) and an acid generator (B), and the resin (A) contains, as a part or an entirety thereof, a copolymer (A1) which is obtained by polymerizing at least: a (meth)acrylic monomer (a1) having C5-20 alicyclic hydrocarbon group which becomes soluble in an aqueous alkali solution by the action of an acid; a (meth)acrylic monomer (a2) having a hydroxy group-containing adamantyl group; and a (meth)acrylic monomer (a3) having a lactone ring, and the copolymer (A1) has a weight-average molecular weight of 2500 or more and 5000 or less, and a content of the copolymer (A1) is not less than 50 parts by mass with respect to 100 parts by mass of the resin (A).
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: November 11, 2014
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Koji Ichikawa, Takashi Hiraoka
  • Patent number: 8883398
    Abstract: The present application relates to a photoactive compound including an oxime ester group and a phosphonate group together, and a photosensitive resin composition comprising the same, the compound of the present application having excellent storage stability and high-temperature process characteristics.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: November 11, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Changho Cho, Sunghyun Kim, Han Soo Kim, Sunhwa Kim, Raisa Kharbash, Jongho Park
  • Patent number: 8883396
    Abstract: A resist composition containing a base component (A) which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a copolymer (A1) having a structural unit (a0) containing a group represented by the following general formula (a0-1) or (a0-2), a structural unit (a11) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a polycyclic group, and a structural unit (a12) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a monocyclic group. Each of the groups —R3—S+(R4)(R5) and Mm+ in the formula has only one aromatic ring as a whole or has no aromatic ring.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: November 11, 2014
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Masahito Yahagi, Jun Iwashita
  • Publication number: 20140329184
    Abstract: A method for the stabilization of an aqueous choline hydroxide solution includes, optionally adding a first stabilizer of a dithionite salt and/or a dialkylhydroxylamine to an aqueous solution containing reactants that will produce an aqueous choline hydroxide solution; and after the aqueous choline hydroxide solution is formed, adding a second stabilizer which comprises a dialkylhydroxylamine to the aqueous choline hydroxide solution. The stabilized choline hydroxide solution may include choline hydroxide, water, and a dialkylhydroxylamine and optionally a dithionite salt as a stabilizer present in an amount of from about 50 ppm to less than about 5000 ppm by weight relative to the total weight of the stabilized choline hydroxide solution.
    Type: Application
    Filed: November 22, 2012
    Publication date: November 6, 2014
    Applicant: TAMINCO
    Inventors: Kristof Moonen, Michael David Gernon
  • Patent number: 8877424
    Abstract: A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: November 4, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayoshi Sagehashi, Jun Hatakeyama, Koji Hasegawa, Kazuhiro Katayama
  • Patent number: 8877429
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: November 4, 2014
    Assignee: JSR Corporation
    Inventors: Gouji Wakamatsu, Masafumi Hori, Kouichi Fujiwara, Makoto Sugiura
  • Publication number: 20140322656
    Abstract: A photoresist layer comprising a fluorinated photoresist material is formed on a device substrate and exposed to patterned radiation. The exposed photoresist layer is contacted with a developing agent to remove a portion of the exposed photoresist layer in accordance with the patterned light, thereby forming a developed structure having a first pattern of photoresist covering the substrate and a complementary second pattern of uncovered substrate corresponding to the removed portion of photoresist, the developing agent comprising a mixture of first and second fluorinated solvents, wherein at least one of the first and second solvents is a hydrofluoroether. The developed structure is treated to form a treated structure. The treated structure is contacted with a stripping agent to remove the first pattern of photoresist, the stripping agent comprising at least the first or second solvent in a concentration different from the developing agent.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 30, 2014
    Inventors: Charles Warren Wright, Diane Carol Freeman, Frank Xavier Byrne, John Andrew DeFranco
  • Patent number: 8871430
    Abstract: The present invention relates to a photoactive compound having a novel structure and a photosensitive resin composition including the same, and the photoactive compound according to the present invention has excellent sensitivity due to efficient absorption to a UV light source by including a nitro group and a phosphonate structure, and has excellent retention rate, mechanical strength, heat resistance, chemical resistance and developing resistance by improving solubility of the photosensitive resin composition by excellent compatibility of the phosphonate structure and a binder resin. Therefore, the photosensitive resin composition according to the present invention is useful to cure a column spacer, an overcoat, a passivation material and the like of a liquid crystal display device, and is useful in view of a high temperature process property.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: October 28, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Changho Cho, Won Jin Chung, Raisa Kharbash, Sunghyun Kim, Dongchang Choi, Sang Chul Lee, Han Soo Kim, Yoon Hee Heo, Sunhwa Kim
  • Patent number: 8871432
    Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: October 28, 2014
    Assignee: JSR Corporation
    Inventors: Shin-ya Minegishi, Satoru Murakami, Yushi Matsumura, Kazuhiko Komura, Yoshio Takimoto, Shin-ya Nakafuji, Kyoyu Yasuda
  • Publication number: 20140315131
    Abstract: An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation.
    Type: Application
    Filed: February 28, 2014
    Publication date: October 23, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Jun Hatakeyama
  • Publication number: 20140308618
    Abstract: Disclosed are an organic solution for surface-treating an indium zinc oxide (IZO) substrate that is used for surface treatment of an indium zinc oxide (IZO) substrate, and includes an organic material, and a method of preparing a display substrate using the same.
    Type: Application
    Filed: November 12, 2013
    Publication date: October 16, 2014
    Applicant: Cheil Industries Inc.
    Inventors: Hyun-Moo CHOI, Ji-Hye KIM, Kyung-Won AHN, A-Rum YU, Jae-Bum YIM, Hwan-Sung CHEON, Gun-Young HEO
  • Patent number: 8852854
    Abstract: According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.
    Type: Grant
    Filed: February 21, 2007
    Date of Patent: October 7, 2014
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Thomas Wallow, Uzodinma Okoroanyanwu
  • Patent number: 8846301
    Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: September 30, 2014
    Assignee: Cornell University
    Inventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Taylor