Abstract: A resist pattern formation method that includes a step (1) of forming a resist pattern on a support using a chemically amplified positive-type resist composition, a step (2) of applying a pattern miniaturization agent to the resist pattern, a step (3) of performing a bake treatment of the resist pattern to which the pattern miniaturization agent has been applied, and a step (4) of subjecting the resist pattern that has undergone the bake treatment to alkali developing, wherein the pattern miniaturization agent contains an acid generator component, and an organic solvent that does not dissolve the resist pattern formed in the step (1). Also, a pattern miniaturization agent used in the method.

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern are then removed to form a second mask from the first mask. The patterning of the block copolymer-containing composition may utilize photolithography. Alternatively, the substrate may have regions which wet differently relative to one another with respect to the block copolymer-containing composition, and the patterning of the first mask may utilize such differences in wetting in forming the first mask.

Abstract: A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.

Abstract: According to one embodiment, an ultraviolet-curing resin material for pattern transfer contains at least one of 2-methyl-2-adamantyl acrylate, 2-ethyl-2-adamantyl acrylate, and 1,3-adamantanedimethanol diacrylate, isobornyl acrylate, polyfunctional acrylate, and a polymerization initiator, or contains at least one of the acrylates described above, a polymerization initiator, and fluorine-based alcohol.

Abstract: A salt having a divalent group represented by the formula (aa): wherein Xa and Xb independently each represent —O— or —S—, Ra, Rb, Rc and Rd independently each represent a hydrogen atom, a C1-C4 alkyl group or a C1-C4 alkoxy group, and m represents 1 or 2.

Abstract: To provide a developer for processing of a lithographic printing plate precursor, containing a non-reducing sugar having bonded therein two or more monosaccharides and having a pH of 6 to 14 and thereby provide a developer having a pH stable to aging and an excellent film-forming property, a method for manufacturing a lithographic printing plate, where a lithographic printing plate excellent in developability and dispersibility of development scum and kept from staining of the non-image area can be manufactured even by simple processing of one solution and one step requiring no water washing step, a developer used therefor, and a printing method of performing printing by using the manufacturing method of a lithographic printing plate.

Abstract: Provided are: a resist surface modifying liquid which is used as a surface treatment liquid of a resist film prior to a post exposure baking (PEB) step, and which can inhibit occurrence of defects of the resist film by reducing water repellency; and a method for forming a resist pattern using the same. A resist surface modifying liquid which is used as a surface treatment liquid prior to a post exposure baking (PEB) step of a resist film, the resist surface modifying liquid containing an acidic compound, and at least one of an alcohol-based solvent represented by a certain general formula and an ether-based solvent represented by a certain general formula.

Abstract: A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.

Abstract: A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

Abstract: A method of forming a pattern in a photoresist layer which contains a dye that is insoluble in the developer solution is disclosed. A rinse liquid, typically deionized water, is dispensed onto the substrate while it is rotated at less than 750 rpm. The dye in the exposed regions is carried off by the rinse liquid, and does not accumulate in corners of exposed regions at the edge of the substrate due to centrifugal action.

Abstract: Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: By a method of preparing a lithographic printing plate having exposing a lithographic printing plate precursor including a photosensitive layer containing (A) a polymerization initiator, (B) a polymerizable compound, (C) a sensitizing dye and (D) a binder polymer and a protective layer in this order on a hydrophilic support with laser and then removing the protective layer and an unexposed area of the photosensitive layer in the presence of a developer, in which the developer is a developer which has pH of from 2 to less than 10 and contains an amphoteric surfactant and a nonionic surfactant having an alkylene oxide chain, a simple processing of one solution and one step which does not require a water washing step becomes possible, excellent development property is achieved and a lithographic printing plate which has good printing durability and does not cause printing stain can be provided.

Abstract: For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.

Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

Abstract: A pattern-forming method includes forming a resist film on a substrate using a photoresist composition, exposing the resist film, and developing the exposed resist film using a negative developer that includes an organic solvent. The photoresist composition includes (A) a polymer that includes a structural unit (I) including an acid-labile group that dissociates due to an acid, the solubility of the polymer in the developer decreasing upon dissociation of the acid-labile group, and (B) a photoacid generator. The developer includes a nitrogen-containing compound.

Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

Abstract: Methods and compositions for enhancing the sensitivity of an inorganic resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material such as a hydrogen-bearing siloxane material) can be formulated with a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a radical generator, and can act to enhance the efficiency of radical generation and/or resist crosslinking when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput. Methods of utilizing one or more of these aspects are also disclosed.

Abstract: A method for making printed circuits and printed circuit boards which includes coating a non-metallized substrate and plating an image of a desired circuit design directly onto the coated substrate without the need to image the circuit design on an intermediate silver halide polyester film or diazo and utilizing existing imaging, developing and etching subtractive techniques in conventional printed circuit board processing. One exemplary embodiment of the method for making printed circuit boards includes coating a non-metallized substrate with a palladium based material including a ferric based solution combined with palladium.

Abstract: A photosensitive resin composition for an interlayer insulating film or a protective film of a substrate for circuit formation, which includes a polymer (a) having a structural unit shown by the formula (A) and a compound (b) which generates a radical when irradiated with active rays and has a structure shown by the following formula (B).

Abstract: A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR?)x)m, (HSiO(3-x)/2(OR?)x)n?(MeSiO(3-x)/2(OR?)x)o?(RSiO(3-x)/2(OR?)x)p, (R1SiO(3-x)/2(OR?)x)q where Ph is a phenyl group, Me is a methyl group; R? is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

Abstract: To provide a photosensitive resin composition in which a hardened film obtained from the photosensitive resin composition has properties comparable to those of a film hardened at a high temperature, a method for manufacturing a patterned hardened film using the photosensitive resin composition, and an electronic part. The photosensitive resin composition includes (a) a polybenzoxazole precursor having a repeating unit represented by a general formula (I): wherein U and V represent a divalent organic group, and at least one of U and V is a group containing an aliphatic chain structure having 1 to 30 carbon atoms; (b) a photosensitizer; (c) a solvent; and (d) a crosslinking agent capable of causing crosslinking or polymerization by heating.

Abstract: A direct emulsion process for making printed circuits and printed circuit boards which includes coating a non-metallized substrate with a solution which creates a light sensitive surface on the substrate, imaging the coated substrate with a circuit design, developing the imaged substrate, and directly plating the developed image onto the coated substrate. Coating solutions which work particularly well in this process include a ferric oxalate and palladium emulsion or a silver based emulsion.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: To provide a resist pattern improving material, containing: water; and benzalkonium chloride represented by the following general formula (1): where n is an integer of 8 to 18.

Abstract: The present invention provides a blended solvent for solubilizing an ultraviolet photoresist. The blended solvent comprises a mixture of from about 5 vol % to about 95 vol % of a first solvent, wherein the first solvent comprises a cyclic ester. A balance of the mixture comprises a second solvent, wherein the second solvent comprises a volatile organic liquid.

Abstract: The present invention relates to carboxyl-containing polymers having higher storage stability and improved processability in the form of powders, pellets or granules and to their use in laundry detergents and cleaners, and also in further fields of use.

Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

Abstract: Negative-Working Lithographic Printing Plate Precursors can be provided with desired contrast coloration after imaging using a coloring fluid that includes a water-insoluble colorant that is soluble in a water-insoluble fatty alcohol. The coloring fluid provides an optical density change in the exposed regions of at least OD2 that is greater than the original optical density of those regions, OD1. The coloring fluid can be applied immediately after imaging and before processing, or it can be applied as part of the developer or processing solution, or it can be applied after processing. The coloring fluid can also be applied to imaged precursors that are designed for either off-press or on-press development.

Abstract: Provided are photoresist developer compositions that include a mixture of organic solvents. Also provided are methods of forming photolithographic patterns using negative tone development, coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.

Abstract: A first film-modifying method includes forming a second film on a first film that includes an acid-dissociable group. The second film is an acid transfer resin film that includes a photoacid generator. The second film is exposed via a mask so that the second film generates an acid. The acid generated by the second film is transferred to the first film. The second film is removed.

Abstract: A method for removing a photoresist is disclosed. First, a substrate including a patterned photoresist is provided. Second, an ion implantation is carried out on the substrate. Then, a non-oxidative pre-treatment is carried out on the substrate. The non-oxidative pre-treatment provides hydrogen, a carrier gas and plasma. Later, a photoresist-stripping step is carried out so that the photoresist can be completely removed.

Abstract: Hot melt compositions include acid waxes and acrylate functional monomers free of acid groups. Upon application of actinic radiation, the hot melt compositions cure to form and etch resist. The hot melt compositions may be used in the manufacture of printed circuit boards, optoelectronic and photovoltaic devices.

Abstract: The method prepares a substrate provided thereon with a first resist film having a first pattern of first pillars spaced at intervals, the pillars having a first height, and forms a second resist film on the substrate. The second resist film is formed by alternately performing, each at least twice, applying of a resist solution to the substrate such that at least the spaces between adjacent first pillars are filled with a resist solution having a thickness smaller than the first height, and by heat-treating of the substrate to solidify the resist solution thus applied, thereby forming a resist layer, whereby the spaces between the adjacent first pillars are filled with resist layers, as the second resist film, having a total thickness at least approximately equal to the first height.

Abstract: The present invention provides a process for producing a surface-modified layer system comprising a substrate (2) and a self-assembled monolayer (SAM) (1) anchored to its surface. The SAM (1) is comprised by aryl or rigid alicyclic moiety species. The process comprises providing a polymorphic SAM (1) anchored to the substrate (2), and thermally treating (4) the SAM to change from a first to a second structural form thereof. The invention also provides a thermolithographic form of process in which the thermal treatment (4) is used to transfer a pattern (3) to the SAM (1), which is then developed.

Abstract: Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: A polymer washout solvent for developing a flexographic printing plate comprising:-an ester hydrocarbon component,-an ether hydrocarbon component,-an alcoholic hydrocarbon component. The washout solvent of the invention has less hazardous properties than the known solvents. Use of a polymer washout solvent for developing a flexographic printing plate in a washing step.

Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.

Abstract: A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

Abstract: In a thinner composition and a method of forming a photosensitive film, the thinner composition includes about 50 to about 90% by weight of propylene glycol monomethyl ether acetate, about 1 to about 20% by weight of propylene glycol monomethyl ether, about 1 to about 10% by weight of ?-butyrolactone, and about 1 to about 20% by weight of n-butyl acetate. The thinner composition may have a proper volatility and an improved ability to dissolve various types of photosensitive materials, and thus the thinner composition may be usefully employed in an edge bead rinse process, a rework process or a pre-wetting process.

Abstract: An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.

Abstract: The present invention provides: a positive photosensitive composition that yields an insulation layer superior not only in high transparency, but also in heat resistance enduring a temperature during the production of a substrate, solvent resistance, and anti-aging property as a permanent resist; a positive permanent resist utilizing the positive photosensitive composition; and a method for producing the positive permanent resist. The present invention provides: a positive photosensitive composition containing (A) a curable silicone resin having a silanol group, which resin has a structure obtained by a reaction between one or more cyclic siloxane compounds represented by the following general formula (1): and one or more arylalkoxysilane compounds represented by the following general formula (2): (B) diazonaphthoquinones, and (C) a solvent; a positive permanent resist using the positive photosensitive composition; and a method for producing the positive permanent resist.