Abstract: In an electrophotographic photosensitive device including a conductive layer, a selenium based photoconductive layer and a transparent insulating layer which are sequentially laminated, the conductive layer is formed by an aluminum substrate conductive layer, a zinc conductive layer (or a zinc conductive layer and a copper conductive layer), and a nickel conductive layer which are sequentially laminated to each other. As a result of this structure, the charge injection characteristic during the primary charging step is improved, and the charge injection preventing characteristic during the simultaneous secondary charging and image exposure steps is sufficiently maintained. The conductive layers contact each other intimately. The electrophotographic photosensitive device exhibits a high humidity durability and a long life and can obtain high electrostatic contrast.

Abstract: In an electrophotographic photosensitive device including a conductive layer, a selenium based photoconductive layer and a transparent insulating layer which are sequentially laminated, the conductive layer is formed of an aluminum substrate conductive layer, a zinc conductive layer a copper conductive layer, and silver conductive layer which are sequentially laminated to each other. As a result of this structure, the charge injection characteristic of the photosensitive device during primary charging is improved, and the charge injection preventing characteristic during the simultaneous secondary charging and image exposure steps is sufficiently maintained. The conductive layers contact each other intimately. The electrophotographic photosensitive device is highly humidity durable and exhibits a long life and can obtain high electrostatic contrast.

Abstract: In the particular embodiment of the invention described in the specification, selected portions of the surface of a selenium-arsenic layer of a photosensitive element for use in electrophotography are provided with a superfinish having ridges and grooves in the range of 0.1 to 2.0 .mu.m and a width of 3 .mu.m or less by vibrating a grinding stones on the moving surface at a frequency of 1,000 to 1,500 cpm and an amplitude of 3 mm. The grindstone is held against the surface with a pressure of 0.3 to 0.4 kg/cm.sup.2.

Abstract: Disclosed is a photosensitive member, or an electrophotographic photosensitive member, characterised by having a photoconductive layer comprising at least one of an amorphous hydrogenated and/or fluorinated silicon germanium and an amorphous hydrogenated and/or fluorinated silicon germanium carbide, a first amorphous hydrogenated and/or fluorinated silicon carbide layer formed on the photoconductive layer and a second amorphous hydrogenated and/or fluorinated silicon carbide layer formed beneath said photoconductive layer.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms of an element belonging to the group III of the periodic table as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.

Abstract: This invention is directed to a photoresponsive device comprised of a substrate, a photoconductive composition comprised of an inorganic photoconductive composition, or a layered organic photoresponsive device comprised of a photogenerating layer and a charge transport layer, followed by an overcoating top layer of a silicone resin containing therein a silicone containing ammonium salt of the formula ##STR1## wherein, R.sub.1, R.sub.2, R.sub.3, are independently selected from the group consisting of aliphatic and substituted aliphatic radicals, wherein the substituents include for example alkyl radicals, R.sub.4 is selected from the group consisting of aliphatic radicals, substituted aliphatic radicals, and the group ##STR2## wherein Y is a number of from about 2 to about 4, and R.sub.5 is hydrogen or an alkyl radical, X is an anion, and Z is a number of from 1 to about 5.

Abstract: An electrophotographic image carrier structure comprises an electrically conductive substrate, a selenium-containing photoconductive layer including more than 35% by weight arsenic, a polyvinyl carbazole covering layer and an intermediate amorphous selenium layer which is situated between the covering layer and the photoconductive layer and which has an arsenic content of zero to less than 0.5% by weight.

Abstract: A layered electrophotographic photoconductor comprising an electrically conductive base; a charge transporting layer, formed on the electrically conductive base, which charge transporting layer comprises a selenium-tellurium alloy, doped with halogen; and a charge generating layer, formed on the charge transporting layer, which charge generating layer comprises a selenium-tellurium-arsenic alloy, doped with halogen.

Abstract: A photosensitive medium for electrophotography comprises an electricaly conductive or a dielectric substrate, a photoconductive layer overlying the substrate, and a transparent dielectric layer overlying the photoconductive layer. The substrate has the entire peripheral portion thereof formed to provide a region uncovered by the photoconductive layer. The transparent dielectric layer is resistant to liquid developer used in electrophotography and may cover the photoconductive layer and the uncovered region of the substrate. Alternatively, the transparent dielectric layer may be secured to the photoconductive layer and the uncovered region of the substrate by the use of an adhesive which is also resistant to the liquid developer.

Abstract: In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.

Abstract: This invention is generally directed to an inorganic overcoated photoresponsive device comprised of a substrate, a layer of electron trapping material, this layer being comprised of halogen doped selenium, halogen doped arsenic selenium alloys, and mixtures thereof; a hole transport layer in operative contact with the electron trapping layer, this layer being comprised of a halogen doped selenium arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.

Abstract: Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.

Abstract: A photosensitive member having at least two electrically operative layers is disclosed. The first layer comprises a photoconductive layer which is capable of photogenerating holes and injecting photogenerated holes into a contiguous charge transport layer. The charge transport layer comprises a polycarbonate resin containing from about 25 to about 75 percent by weight of one or more of a compound having a general formula: ##STR1## wherein R is selected from the group consisting of an alkyl group having from 1 to about 4 carbon atoms and chlorine in the ortho, meta or para position. This structure may be imaged in the conventional xerographic mode which usually includes charging, exposure to light and development.

Abstract: This invention is directed to photosensitive material for electrophotography and more particularly it is directed to the improvement of the properties with respect to humidity of photosensitive material by using photoconductive material in combination with ion exchange resin or by using photoconductive material which is previously washed in an aqueous solution in the presence of ion exchange resin.

Abstract: A composite dual layered photoreceptor member useful in the field of electrostatic electrophotography. The photoreceptor has a support member with a bulk layer on the support member of vitreous selenium-tellurium composition and a thin overlayer of vitreous arsenic-selenium composition. The selenium-tellurium can, if desired, be doped with a halogen.

Abstract: An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.

Abstract: An electrophotographic plate comprising a conductive substrate, a photoconductive-insulative layer overlaying the substrate and a transparent, electrically active, organic, electron transport layer overlaying the photoconductive-insulative layer in which the photoconductive layer comprises a Se--Te or Se--As mixture in the range of 90-97.5 atomic percent Se or 60-97.5 atomic percent, respectively, and wherein the thicknesses of the photoconductive layer and transport overlayer range between 40 to 100 micrometers and 1 to 5 micrometers, respectively.

Abstract: An imaging member comprising a charge generation layer comprising a layer of photoconductive material and a contiguous charge transport layer of a charge transport material dissolved in a polymer of the following structure: ##STR1## wherein R', R", R'" and R"" are independently selected from the group consisting of alkyl and alkylene groups having from 1 to 12 carbon atoms, there being no more than 1 alkylene group present, x is from 4 to 5, y is from 0 to 1, n is a whole number and said polymer has a molecular weight ranging from about 1500 to about 120,000, said transport layer being substantially nonabsorbing in the spectral region at which the photoconductive layer generates and injects photogenerated holes, but is capable of supporting the injection of photogenerated holes from said photoconductive layer and transporting said holes through said charge transport layer.

Abstract: An electrophotographic photosensitive member comprises a base, a photoconductive layer and an insulating layer, and the photoconductive layer contains an intermediate layer formed at the base side of the photoconductive layer. The intermediate layer facilitates injection of electric charge.

Abstract: An electrophotographic photosensitive member having an amorphous deposition layer as a photoconductive layer, in which the amorphous deposition layer is formed by gradual increase in a substrate temperature during deposition of the photoconductive material.

Abstract: A photoreceptor of electrophotography having a flexibility and a sensitivity to electromagnetic wavelengths of a wide range extending as far as the red color region of the spectrum of light rays is produced by forming a layer of a halogen-doped Se-S alloy on a substrate and further forming on said layer a halogen-doped Se-Te alloy layer. The Se-S alloy contains sulfur in a weight ratio of 0.1 to 0.35 to the Se-S alloy. The Se-Te alloy contains tellurium in a weight ratio of 0.05 to 0.35 to the Se-Te alloy.

Abstract: An electronic photograph photosensitive plate composed of a high resistant semiconductor layer placed on a conductive base plate and forming a high commutating barrier to check electric charge against coming in from said base plate side, a thin layer consisting of a panchromatic photoconductor in low resistance and high sensitivity placed on said layer to absorb light rays and generate charge carriers, and a transparent high resistant semiconductor layer placed further thereon to hold electric charge and serve as a passage for charge carriers generated.

Abstract: An electrophotographic photosensitive member having an insulating layer overlaid on the one side of an amorphous photoconductive layer is characterized in that said photosensitive member further comprises two layers: a charge injection layer and a subsidiary charge injection layer overlaid on the other side of the photoconductive layer with the subsidiary charge injection layer being interposed between the photoconductive layer and the charge injection layer, said subsidiary charge injection layer having a lower free charge density than that in the photoconductive layer and being able to make it easy to inject an amount of electric charge from the charge injection layer into the photoconductive layer whereas said charge injection layer has a higher free charge density than that in the photoconductive layer and serves as a main supply source of the electric charge to be injected into the photoconductive layer.