Abstract: A photosensitive material comprising a photosensitive-group-containing fullerene such as a photosensitive material which is obtained by adding a photosensitive group to fullerene and/or a photosensitive material which is obtained by combining the fullerene with a photosensitive agent is provided. The photosensitive material according to the present invention has excellent properties as a new resist which is a photosensitive material suitable as a photolithographic resist for the production of semiconductors utilizing such light source as ultraviolet light, deep ultraviolet light, X-ray or electron beam and which meets the requirements for realization of a higher level of resolution and sensitivity.

Abstract: Thin films of substantially pure soluble polythiophenes and oligothiophenes undergo cross-linking and insolubilization upon irradiation with UV/visible light, without additives. Irradiation of thin polymer films through a photomask and subsequent development with solvent leaves a polymeric image of the mask. The resulting .pi.-conjugated polymeric pattern can be rendered electronically conducting by oxidation. The electronic conductivity of these films is high and is similar to that found for oxidized, non-irradiated films. Furthermore, the conductivity can be regulated over eight orders of magnitude by controlled oxidation. Thus, the fabrication of electronically conducting, organic "wires" or "channels" using conventional semiconductor photolithographic techniques can be achieved.

Abstract: An imaging element for use in an electron-beam-recording process is comprised of a film support having, in order, on one side thereof a conductive layer comprising vanadium pentoxide, an adhesion-promoting hydrophilic colloid layer and an imaging layer. The imaging layer is comprised of an electron-beam-sensitive silver halide emulsion and the vanadium pentoxide is present in the conductive layer in an amount sufficient to impart thereto a resistivity of less than 5.times.10.sup.8 .OMEGA./sq. The imaging element is free of objectionable visual density, UV density and mottle and can be manufactured without the need for organic solvents.

Abstract: A photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a crosslinking agent. The crosslinking agent comprises a water soluble sugar. The present invention also provides a method of making microelectronic structures.

Abstract: An electron-beam-recording process comprises the steps of (1) providing an electron-beam-recording element, (2) introducing the element into a vacuum chamber, (3) imagewise exposing the element within the vacuum chamber to an electron beam and (4) processing the imagewise-exposed element to form a visible image. The electron-beam-recording element comprises a film support having, in order, on one side thereof a conductive layer comprising vanadium pentoxide, an adhesion-promoting hydrophilic colloid layer and an imaging layer. The imaging layer is comprised of an electron-beam-sensitive silver halide emulsion and the vanadium pentoxide is present in the conductive layer in an amount sufficient to impart thereto a resistivity of less than 5.times.10.sup.8 .OMEGA./sq.

Abstract: A positive resist composition comprising a poly(p-hydroxystyrene) as matrix resin which is synthesized by an anionic polymerization method and has a weight average molecular weight of from 8,000 to 20,000, bis(p-t-butoxycarbonylmethyl)thymolphthalein as dissolution inhibitor, bis(p-t-butylphenyl)iodonium triflate as acid generator; a compound which contains one amino group and one carboxyl group to function as acid deactivator and propylene glycol monomethyl ether acetate as organic solvent.

Abstract: The invention is directed to a process for fabricating an integrated circuit. An imaging layer is deposited on a substrate. The imaging layer is an energy sensitive resist material. The energy sensitive resist material contains moieties that preferentially bind to refractory material. A latent image of a pattern is introduced into the imaging layer by patternwise exposing the imaging layer to energy. The patternwise exposure introduces a selectivity into the resist material that is exploited to bind refractory material preferentially to either the exposed resist material or the unexposed resist material, but not both. The refractory material forms an etch mask over the resist material to which it preferentially binds. This etch mask is then used to transfer a pattern that corresponds to the latent image into the substrate.

Abstract: Improved chemically amplified resist is provided that comprises 100 parts by weight of a copolymer produced from a first monomer unit having a recurrent acid labile pendant group that changes the polarity of the polymer and a second monomer unit having an alkali-soluble group and 1 to 20 parts by weight of a photo acid generator.

Abstract: A three-dimensional optical memory based on stacked thin film electron trapping layers. Each thin film electron trapping layer is sandwiched between pairs of insulating layers and transparent electrodes. When an electric field is applied across the electron trapping layer via the electrodes, the electron trapping process is enhanced. In this way, electrical page addressing can be achieved for writing data to the memory. The data are read out by an IR light directed into the electron trapping film from the edge, again preferably with the application of an electric field across the addressed layer to enhance readout. The application of an electric field across an addressed layer during the writing and reading steps effectively eliminates inter-page crosstalk.

Abstract: Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

Abstract: A technique is describe for effecting very-high resolution semiconductor lithography using direct-write afocal electron-beam exposure of a sensitized wafer. A positioning mechanism and needle-like probe similar to those used in scanning-tunneling microscopy are used in conjunction with a controllable electron field emission source to produce a near-field electron beam capable of exposing an electron-beam sensitive resist on a wafer surface. Conventional e-beam resists are used. The technique can be used in conjunction with scanning-tunneling-like operation of the apparatus to record the appearance and nature of the wafer surface, thereby providing information about the location of underlying features. This location information can be used to assist in aligning the exposure patterns to existing structures in the semiconductor wafer.

Abstract: A high polymer organic film is applied as a bottom layer to a semiconductor silicon substrate. Then, a material including an acid generator and a polysilane resin insoluble in an alkaline solution is applied to the bottom layer as an electron beam resist layer. The polysilane resin includes a Si--Si bond or Si--O bond in a principle chain and a substituted hydroxy group expressed as --OR in a side chain wherein R denotes a substitution group of hydrocarbon. The acid generator generates an acid when irradiated with an electron beam. Then, a pattern is formed with an electron beam in the photosensitive layer, and it is developed with an alkaline solution. Then, by using the resist pattern as a mask, the bottom layer is etched. Thus, a fine resist pattern of correct high aspect ratio can be formed easily.

Abstract: A resist composition comprising (a) a polymer having at least repeating units of the formulae: ##STR1## (b) a photoacid generator and (c) a solvent, has high sensitivity to light, excellent heat resistance, adhesiveness to a substrate and suitable for pattern formation with high resolution.

Abstract: An electron beam exposure method for controlling the solubility of resist layers used in a variety of lithography processes, to permit removal of the resist material from selected positions and depths in the resist. By controlling the energy of a uniform electron beam impinging on the resist, the method selects a resist depth for applying a dose of electrons, the effect of which is to change the solubility properties of the resist material at the selected positions and depths. Subsequent removal of unwanted portions of the resist produces desired resist wall slope and edge profiles in the developed patterns in photoresist. One embodiment of the invention uses the same basic method to produce three-dimensional structures in the resist material, including bridge-like structures in which lower layers are removed from beneath intact upper layers.

Abstract: In a nanometer order dot pattern producing method and drawing apparatus by electron holography, a nanometer order dot pattern is readily produced with a high accuracy, using a pair of biprisms or multi-biprisms integrated as a unit so as to mutually cross. Each multi-biprism includes a plurality of biprisms arranged in parallel. Electric potentials of the integrated biprisms or multi-biprisms are independently controlled.

Abstract: A charged particle exposure system comprises an electron gun, an irradiation optical system, an incident mask deflector, a stencil mask, an irradiation mask provided on an incident side of the deflector, a reduction optical system, and a stage. The stencil mask has a group of normal patterns and at least two mark patterns. Images of the mark patterns are transferred onto the surface of a sample on the stage. A reduction ratio and rotational angle of the transferred images are computed according to a distance between the images, positional relations of the images, a known distance between the mark patterns on the stencil mask, and known positional relations of the mark patterns on the stencil mask. Based on the computed reduction ratio and rotational angle, exposure conditions of the exposure system are adjusted.

Abstract: A dry developable photoresist composition that contains in admixture a polymeric epoxide; a di- or polyfunctional organosilicon material; and an onium salt; and use thereof to produce an image.

Abstract: A silver halide photographic light-sensitive material is disclosed. The light-sensitive material comprises a support comprising a substrate and an electron beam-cured resin layer provided on a surface of the substrate, and a hydrophilic colloid layer provided on said resin layer. The resin layer comprises an electron beam-curable composition cured by electron beam radiation and a white pigment in an amount of 20% to 70% by weight. The hydrophilic colloid layer includes at least one silver halide emulsion layer and optionally a non-light-sensitive hydrophilic colloid layer, and contains gelatin and an oil component. In the light-sensitive material, the curling degree of the support R m.sup.-1, the coating amount of the gelatin G g/m.sup.2, and the coating amount of the oil component Oi g/m.sup.2 are each -8.ltoreq.R.ltoreq.-1, 2.ltoreq.G.ltoreq.20 and 0.ltoreq.Oi.ltoreq.20, respectively, and a value Y calculated by the following equation is -3.ltoreq.Y.ltoreq.5;Y=0.9G-0.

Abstract: In an electron beam lithographic method including a correction radiation step based on the ghost method, the entire correction region is divided into small regions, each having a size smaller than a spread of backscattering of an electron beam and larger than a minimum figure which can be drawn. Representative figures are set, as radiation unit figures in the respective small regions, to be smaller in number than the number of times of radiation to be performed when the desired patterns in the small regions are drawn as black/white-inverted patterns. Exposure dose are set for the representative figures in the respective small regions. The electron beam is defocused to increase a beam size to a size roughly coinciding with the spread of backscattering, and the representative figures in the respective small regions are drawn with the set exposure dose.

Abstract: A method of manufacturing a medium having a magnetic pattern, comprises the steps of forming a first groove in a substrate by photoetching, and forming in the first groove or in a portion of the substrate adjacent to the first groove by the photoetching a second groove of different depth than the first groove. The first and second grooves are then filled with a ferromagnetic substance so that the ferromagnetic substance in the first groove is different in thickness from the ferromagnetic substance in the second groove. The ferromagnetic substance is then magnetized to produce magnetic field intensity distribution based on the thickness of the magnetized ferromagnetic substance.

Abstract: A system and method are provided for compensating for proximity effects between selected adjacent portions of pattern elements on an integrated circuit wafer where it is determined by simulation that undesirable resist patterns will result. The subject lithography system includes projecting an electron beam onto the wafer through an aperture plate of pattern elements to obtain the desired beam pattern. An aperture mask includes a plurality of first portions corresponding to first wafer circuit element portions spaced for avoiding proximity effects on the wafer and a plurality of second portions corresponding to second element portions spaced for obtaining proximity effects between elements on the wafer. The plurality of second portions are sized to have an increased adjacent spacing relative to a resultant adjacent spacing of the corresponding second element portions whereby the resultant adjacent spacing of the second element portions on the wafer is selectively reduced by the proximity effects.

Abstract: A method for improving the resolution of an electron resist pattern on a substrate coated with a polymeric electron resist film is disclosed which provides an external coating layer of dried polymer selected from the group consisting of water-soluble polymers and poly(m-phenylene isophthalamide), or of a mixture consisting essentially of said dried polymer and hexavalent tungsten compounds wherein the weight ratio of the tungsten compounds to polymer is up to about 1:1. Also disclosed are substrates coated with a polymeric resist film wherein the resist film consists essentially of such external layers, or wherein an external coating layer of said polymer-tungsten compound mixture is provided.

Abstract: A pattern formation process using a positive-working resist material of the formula (I): ##STR1## in which R.sup.1 and R.sup.2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.

Abstract: Sub-micron pattern delineation, importantly in the fabrication of large scale integrated devices, is based on a patterned photocathode. Functionally, the photocathode plays the role of the mask in competing systems, either in proximity printing or in projection. In operation, the photocathode is illuminated by ultraviolet radiation to release electrons which are brought to focus on a resist-coated wafer with assistance of a uniform magnetic field together with an accelerating applied voltage.

Abstract: A method for producing a phase hologram using e-beam lithography provides n-ary levels of phase and amplitude by first producing an amplitude hologram on a transparent substrate by e-beam exposure of a resist over a film of metal by exposing n.ltoreq.m.times.m spots of an array of spots for each pixel, where the spots are randomly selected in proportion to the amplitude assigned to each pixel, and then after developing and etching the metal film producing a phase hologram by e-beam lithography using a low contrast resist, such as PMMA, and n-ary levels of low doses less than approximately 200 .mu.C/cm.sup.2 and preferably in the range of 20-200 .mu.C/cm.sup.2, and aggressive development using pure acetone for an empirically determined time (about 6 sec.) controlled to within 1/10 sec. to produce partial development of each pixel in proportion to the n-ary level of dose assigned to it.

Abstract: A novel radiation-sensitive resin composition having high sensitivity and high O.sub.2 -RIE resistance is otained by blending 0.5 g of poly(di-t-butoxysiloxane), 50 mg of triphenylsulfonium trifluoromethanesulfonate as acid-producing agent, and 4 ml of 2-methoxyethyl acetate as solvent.

Abstract: Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask and the substrate. In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.

Abstract: A support sheet for a photographic printing sheet having enhanced anti-fogging and anti-yellowing properties comprises a pulp paper substrate sheet, a front coating layer formed on a front surface of the substrate sheet and comprising a cured resinous material produced from electron beam-curable unsaturated organic compound by an electron beam irradiation thereto and mixed with a white pigment, and a back coating layer formed on a back surface of the substrate sheet and comprising a film-forming synthetic resinous material, in which magnesium hydroxide is contained, as an anti-fogging agent, in the substrate sheet.

Abstract: An electron beam exposure apparatus comprises an electron beam source, a holder for supporting a semiconductor substrate, a beam patterning part for patterning the electron beam, a beam focusing system for focusing the patterned electron beam on the semiconductor substrate, and a beam deflector system for deflecting the focused electron beam. The beam deflector comprises at least first, second and third coil assemblies connected in series for producing first through third magnetic fields respectively such that the first through third magnetic fields extend generally perpendicularly to the beam path of the electron beam at respective vertical levels on the beam path.

Abstract: A method for optimizing a pattern where the shape of the pattern is replicated on a surface, where fine areas are identified within the pattern and are combined with neighboring areas so as to reduce the number of areas within the pattern too fine to properly resolve, thereby increasing the efficacy with which the pattern is replicated.

Abstract: A radiation-sensitive composition comprising an admixture in a solvent of: at least one alkali-soluble binder resin, at least one photoactive compound and an effective sensitivity enhancing amount of at least one compound of formula (I): ##STR1## wherein each R is individually selected from the group consisting of hydrogen and a lower alkyl group having 1-4 carbon atoms and each n is 0, 1, or 2; the amount of said binder resin being about 60 to 95% by weight, the amount of said photoactive component being about 5% to about 40% by weight, based on the total solids content of said radiation-sensitive composition.

Abstract: A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): ##STR1## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atomsR.sub.2 means a hydrocarbon radical having at least one Si,R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2 , or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1.Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.

Abstract: Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.

Abstract: A method of adjusting exposure of an energy beam to a lithographic resist sensitive to the energy beam, which method comprises determining where in a pattern to be exposed the energy level will exceed a critical thermal level, and adjusting the pattern and kind of exposure of the resist where the critical level is exceeded. One technique is to adjust the level exposure of the resist to a lower level equal to or less than the critical level with repeated exposures of the pattern in areas where the critical level is exceeded. The energy level monitored can be a thermal level measured as a temperature of the resist. A second technique is to adjust the exposure level by modifying the pattern and duration of exposure of the resist to a longer duration providing exposures equal to or less than the critical level with the modified pattern of exposures of the pattern in areas where the critical level is exceeded.

Abstract: A preparation method of a gate electrode for semiconductor device which comprises forming a plurality of specific resist layers sensitive to an electron beam over a substrate through a silicon nitride film, subjecting the resist layers to an electron beam lithography to obtain an opening having a specific configuration at the opening portion, etching the silicon nitride film through the opening to form an opening in the silicon nitride film, etching the substrate through the opening of the silicon nitride film to form a cavity in the substrate, and forming a metal member on the substrate in the cavity in accordance with a metal-deposition and lift-off process to obtain the gate electrode in a projected shape.

Abstract: A direct-writing electron beam is used for defining features in a resist layer and hence ultimately in an underlying workpiece, such as in a phase-shifting mask substrate or a semiconductor integrated circuit wafer. The resist layer is located on a top major surface of the workpiece.In a specific embodiment, the resist layer is located underneath a protective layer of polyvinyl alcohol ("PVA"); and a grounded conductive layer, such as a conductive organic layer, is located on the protective layer. After exposing the top major surface of the resulting structure to the direct-writing electron beam, the following steps are performed:(1) a plasma etching completely removes the entire thickness of the conductive layer as well as a small fraction of the thickness of the PVA layer;(2) the PVA layer is then completely removed by dissolving it in water;(3) another plasma etching removes a small fraction of the thickness of the resist layer, including any unwanted residues; and(4) the resist layer is developed.

Abstract: A phase-shifting lithographic mask is made by a procedure involving only a single patterned electron, ion, or photon beam bombardment of a resist layer. The bombardment is arranged to produce three kinds of regions in the resist: no dosage, low dosage, and high dosage. These three regions in the resist are then utilized--in conjunction with an ordinary wet development step followed by either a silylation or an optical flooding technique, and thereafter by another ordinary wet development step--to pattern the resist layer and thereby to enable forming, by dry or wet etching, an underlying double layer consisting of a patterned opaque layer and a patterned transparent phase-shifting layer, the phase-shifting layer being located on, or being part of, a transparent substrate.

Abstract: Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes.

Abstract: Radiation-sensitive film composed of at least one monomolecular layer of fluorine-containing amphiphiles. If a vinyl monomer containing fluoroalkyl side groups is copolymerized with a vinyl monomer containing oxirane groups, an amphiphilic polymer is obtained. To prepare a sandwich, a polymer is dissolved in a volatile organic solvent which is immiscible with water, the solution is spread on the water/air boundary surface, the resultant layer is compressed after the solvent has evaporated and transferred to a solid layer support by the Langmuir-Blodgett technique. The oxirane rings are cleaved and the film crosslinked by the action of high-energy radiation on the film.

Abstract: A radiation-sensitive composition comprising an admixture in a solvent of: at least one alkali-soluble binder resin, at least one photoactive compound and an effective sensitivity enhancing amount of at least one tris (hydroxyphenyl) lower alkane compound; the amount of said binder resin being about 60% to 95% by weight, the amount of said photoactive component being about 5% to about 40% by weight, based on the total solids content of said radiation-sensitive composition.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Abstract: The fine pattern forming method includes the steps of applying an organic polymer film on a semiconductor substrate and heat treating the same; applying a resin solution (including an acid degradation polymer or an acid reactive monomer, an acid generator capable of generating an acid by irradiation with an electric charged beam, and a silicone resin) on the organic polymer layer and heat treating the same; carrying out a heat treatment after a pattern is written, causing the generated acid to react with the acid degradation polymer or the acid reactive monomer and carrying out a development in an alkaline solution to form a resist pattern; and etching the organic polymer layer using the resist pattern as a mask.

Abstract: A method of exposing the resist on a printed wiring board having through holes for connecting planar circuit patterns on the plane surfaces of the substrate is disclosed, wherein an electron beam direct writing system is utilized for scanning a converging electron beam as the exposure energy. The electron beam produced by the system enters the opening of the through hole, forming an inclination angle different from 0 degrees and up to 7 degrees with respect to the normal to the opening area of the through hole, such that the resist on the wall surface of the through hole is exposed simultaneously both by the direct and the reflected electron beam. The amount of exposure per unit area of the opening of the through hole may be controlled to 2 h/r times the amount of exposure per unit area over the planar surface of the substrate, wherein h and r are the depth and the radius of the through holes, respectively.

Abstract: A phase-shifting lithographic mask is made by a procedure involving only a single patterned electron, ion, or photon bombardment of a resist layer. The bombardment is arranged to produce three regions in the resist containing mutually different bombardment doses per unit area, one of which is typically zero. These three regions are then used--in conjunction with separate wet development steps with two developers of different concentrations--in order to pattern the resist layer and to from an underlying double layer consisting of a patterned opaque layer located on a differently patterned transparent phase-shifting layer, the transparent phase-shifting layer being located on, or being part of, a transparent substrate.

Abstract: Excellent resolution and sensitivity in the patterning of resists utilized in device and mask manufacture is obtained with a specific composition. In particular this composition involves polymers having recurring pendant acid labile .alpha.-alkoxyalkyl carboxylic acid ester and/or hydroxyaromatic ether moieties in the presence of an acid generator comprising a novel diazonium salt.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Abstract: Negative-acting flexographic printing plates display enhanced performance when backside irradiated with ionizing radiation instead of longer wavelength ultraviolet radiation. A better defined floor and more readily controlled floor is produced on the final printing plate.

Abstract: A process of producing an exposure mask by which the accuracy of a pattern of a mask film to be formed on a surface of a transparent substrate is improved and also the accuracy in registration between layers is improved. The process comprises the step of correcting, upon exposure for the formation of a mask pattern, the position of a mask pattern by a different correction amount in accordance with a ratio at which the area of the mask film which remains after etching occupies in the entire area of a transparent substrate on which the mask film is formed.

Abstract: In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.

Abstract: Disclosed is a method of forming a pattern by irradiating a resist, which comprises irradiating a resist composed mainly of a polymer or copolymer comprising structural units represented by the following general formula (1): ##STR1## where R represents a hydrocarbon group containing at least one Si atom, patternwise with an energy beam, and developing the irradiated resist pattern.