Abstract: The present invention provides an electron beam gun for an electron beam evaporation source in which a beam former shields a filament from an anode such that electrons emitted from the filament are accelerated past the anode in a ribbon-like beam. The filament is connected to a split cathode block having two sides for applying an electric current through the filament. The beam former has two sections which are separately connected to the two sides of the cathode block such that the cathode block acts as a heat sink for the beam former, and a thermal gradient is not produced within the beam former that would produce warpage and movement of the beam former. Preferably, the vertical gap is about 0.254 mm. to prevent electrons emitted from the filament from arcing through the gap to the anode.

Abstract: An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

Abstract: Resist containing novolak prepared by condensating halogenated phenol represented by the following formula (III) and one or more phenol derivatives selected from the group consisting of cresol, xylenol, tet-butylphenol and propenylphenol, with a carbonyl compound ##STR1## wherein R.sub.3 is an halogen atom selected from the group consisting of F, Cl, and Br. If the resist is used as a positive-type one, it further contains a photo-sensitive agent, and R.sub.3 in the formula (III) is either F or Br. If the resist is used as a negative-type one, it further contains a photosensitive agent and/or a sensitizer, and R.sub.3 in the formula (III) is either Cl or Br.

Abstract: An optical information memory medium comprising a substrate, an improved underlying layer formed on the substrate surface, and a recording layer formed on the underlying layer and mainly consisting of an organic pigment is disclosed. In this optical information memory medium, the underlying layer is formed by causing a compound containing a hydroxyl or carboxyl group selected from the group consisting of a radical polymerizable monomer containing a hydroxyl or carboxyl group, a copolymer obtained from a monomer containing a hydroxyl or carboxyl group, and a polymer compound containing a hydroxyl or carboxyl group to react with a hydrolyzed condensate which is derived from an alkoxide or an aryloxide of a metal selected from the group consisting of Al, Ti, Zr, In, Zn, Mg, Ni, and Cu or from a chelate compound mainly consisting of the metal.

Abstract: The invention is a method and device providing very high density information storage on an organometallic charge transfer data storage medium. The medium is switched from one state to another through the application of an electric field to the medium by the probe tip of a scanning tunneling microscope resulting in an observable change in the electron density of the surface of the medium. A STM tip is used to write, read and erase data via the organometallic charge transfer medium (e.g. TCNQ, or derivatives thereof).

Abstract: An electron beam imaging system (10) includes a photoemitter plate (12). An optical image beam (15) is directed through a pattern mask (18), which is imaged onto the photoemitter (12). The photoemitter (12) emits electrons from those unmasked regions illuminated by the optical image beam, emitting an extended-source electron beam that carries the mask image. The extended-source electron beam is focused (34) onto a device under fabrication (40), providing a single-stage electron lithographic patterning function. The optical source (16) is chosen so that the optical image beam energy is nearly identical to the work function for the photoemissive coating (14) of the photoemitter (12). As a result, the photoemitter (12) emits electrons with substantially zero kinetic energy, allowing the emitted electrons to be accelerated through the electron beam focusing elements (34) with very nearly identical electron velocities, thereby minimizing chromatic aberrations.

Abstract: A process for producing images on a photosensitive material comprising a support and a normally positive-working photosensitive layer is disclosed. The photosensitive layer is activated by exposure to ultraviolet light and imaging is effected by means of thermal energy. A mixture comprising a compound containing at least one --C--O--C-- or --C--O--Si-- bond which can be split by acid and a compound forming a strong acid upon exposure is employed in the photosensitive layer and imaging in the activated region is carried out by means of laser or electron beams or with the aid of a thermal printer. The process of the invention is suitable for use with digital techniques and makes it possible, in a simple manner, to employ a combined procedure for imaging the photosensitive material (photocomposing).

Abstract: A method of exposing the resist on a printed wiring board having through holes for connecting planar circuit patterns on the plane surfaces of the substrate is disclosed, wherein an electron beam direct writing system is utilized for scanning a converging electron beam as the exposure energy. The electron beam produced by the system enters the opening of the through hole, forming an inclination angle different from 0 degrees and up to 7 degrees with respect to the normal to the opening area of the through hole, such that the resist on the wall surface of the through hole is exposed simultaneously both by the direct and the reflected electron beam. The amount of exposure per unit area of the opening of the through hole may be controlled to 2h/r times the amount of exposure per unit area over the planar surface of the substrate, wherein h and r are the depth and the radius of the through holes, respectively.

Abstract: A novel calixarene derivative, viz. acetylated methyl-calix[n]arene (n is from 4 to 8), exhibits high solubilities in various organic solvents. A film of this compound can easily be formed by a conventional solution coating method such as spin coating, and the obtained film is hard and heat-resistant. A pattern of negative type can be formed in the obtained film by selectively irradiating the film with a high-energy ray such as ion beam, electron beam or X-ray to polymerize and insolubilize the irradiated regions and then removing the unirradiated region by dissolution in an organic solvent.

Abstract: Method of writing patterns on a substrate, for fabricating masks used in semiconductor fabrication. Thin films are deposited on the substrate. A resist, typically a negative resist, sensitive to an electron beam is applied to the films. The desired patterns are written on the resist with the electron beam. Undesired portions of the films are etched away. The selective removal of the films deforms the substrate. The amount of the deformation is forecasted. The positions at which the electron beam hits the resist are corrected according to the forecasted amount.

Abstract: A thin film of conductive high molecular compound is formed on a substrate such as Si followed by a heat treatment, and thereafter an electron beam exposure and subsequent development are made, to form pattern of the thin film of conductive high molecular compound; this method can eliminate forming of metal film to prevent the electron charge, can prevent charging of resist in electron-beam exposure or further prevent proximity effect when combined with deep ultraviolet light exposure.

Abstract: An optical disk structure for an erasable optical disk for use with an erasable optical disk drive using electron trapping optical memory media is disclosed in which several distinct layers in additon to the electron trapping optical memory media are utilized in order to minimize light scatter between adjacent tracks on the disk and to carry permanent format and guidance information for use in accomplishing the write, read and focusing and tracking functions of the erasable opticl disk drive with which the disk structures are utilized. The use of absorbing layers as part of the optical disk structure for attenuating reflections of light within the disk structure and eliminating the spreading of marks is also disclosed.

Abstract: An electron beam lithography method with multiple low-dose scans by an electron beam (320) exposes a resist (402) pattern.

Abstract: To achieve higher resolution integration in semiconductor device fabrication using electron beam (EB) or X-ray lithography or a method of lithography is disclosed in which: (1) an EB or X-ray resist material is mixed with an absorbing material for ultraviolet (UV)-rays; (2) the resist layer is selectively exposed to the EB or X-ray with the total irradiation density less than applied in a conventional EB or X-ray exposure; and (3) the entire surface of the resist layer is further exposed to the UV-ray for a total irradiation period less than a minimum level required to induce a reaction in said resist layer. Resist materials such as chloromethylated polystyrene (CMS), polydiarylorthophtalate (PDOP), and polymethylmethacrylate (PMMA), each mixed with p-azido acetophenone as the UV-ray absorbing material improve contrast and resolution of the resist layer. Other UV-ray absorbing materials such as p-azido benzoic acid and 3-sulfonylazido benzoic acid achieve the same result.

Abstract: A pattern-forming method using an electroconductive composition comprising at least one TCNQ complex salt selected from the group consisting of isoquinolinium-TCNQ complex salts, quinolinium-TCNQ complex salts, alkyl pyridinium-TCNQ complex salts, and morpholinium-TCNQ complex salts, a specific polymer, and a solvent are disclosed. This composition gives an electroconductive film having a superior long-term storage stability and electroconductive characteristics.When this electroconductive composition is coated on a resist to form an electroconductive film, and a pattern is formed by an irradiation with charging beams, such as electron beams, an accumulation of charges (charge-up) is prevented and a fine resist pattern in which a misregistration is completely prevented is obtained.

Abstract: A light-sensitive composition for the preparation of printing plates is described, which contains a water-insoluble binder which is soluble in aqueous-alkaline solutions; a light-sensitive component which is an o- or p-quinone diazide, a diazonium salt polycondensation product or a mixture ofa) a compound which eliminates an acid on exposure to light andb) a compound having at least one C--O--C group which can be split by acid; and a thermo-crosslinking compound which is a cyclical acid amide of the general formula: ##STR1## wherein R denotes a hydrogen atom or an alkyl group. The printing plates can be baked at lower temperatures than plates without a crosslinking agent, but nevertheless have a long shelf life.

Abstract: The radiation-sensitive mixture contains(a) a polymeric binder which is insoluble in water but soluble in aqueous alkaline solutions and(b) an organic compound whose solubility in an aqueous alkaline developer is increased by the action of an acid and which contains one or more acid-cleavable groups,the polymeric binder (a) being a copolymer which contains o-nitrobenzyl groups.The novel radiation-sensitive mixture is particularly suitable for the production of photoresists.

Abstract: A hologram is directly recorded in a sensitized metal substrate. The hologram may be an amplitude hologram, or may be treated to produce a phase relief hologram which may be stamped into a plastic material for reproduction, be archivally stored, or used as a master for electroforming a second durable surface relief hologram for use as an embossing master. A suitable material is prepared from a polished silver plate exposed to halogen vapors. After exposure, the plate is developed and fixed, and the surface is differentially etched to form a surface relief suitable for hologram embossing. Daguerreotype processes are modified to make surface amplitude holograms and phase holograms. By etching through a metal film a semiconductor mask is obtained. By depositing a silver film directly on a wafer, masks are made with very high feature definition.

Abstract: An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

Abstract: A high resolution lithographic mask having a desired pattern is generated and used to replicate the pattern onto a film in a one-step process.A film of phase-changeable material in one state is provided on a conductive substrate. By scanning tunneling microscope techniques, the state and thereby the conductivity or other property of the material in selected areas of the film is changed to a second state to provide from the film a mask having a desired pattern defined by crystalline areas. Amorphous material need not be removed from the mask.To replicate the pattern on another film, the latter is placed on another conductive substrate; the mask is positioned with its patterned side within electron tunneling distance of said other film; and the pattern is replicated in a single step by applying a voltage between the mask and other film.

Abstract: The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.

Abstract: Heat-stable structured layers can be manufactured through the application of radiation-sensitive soluble polymers in the form of a layer or film on a substrate, irradiation of the layer respectively film through negative patterns with actinic light or through the use of a light, electron, laser, or ion beam, removal of the non-irradiated layer respectively film parts and, if necessary, through subsequent tempering, in a cost-effective way in dimension-precise and high-quality form and in a single application process, when the polymers used are photopolymers in the form of addition reaction products of olefinic unsaturated monoisocyates with phenolformaldehyde resins. The layers produced with this method resist even high thermal and mechanical stress in immersion soldering processes and protect circuit surfaces effectively and permanently against moisture and corrosion; they are therefore suitable for use, in particular as solder resist and insulating layers in microelectronics.

Abstract: Multilayer resist materials containing a lowermost layer having a high resistance to dry etching and made from polymers or copolymers of haloalkylated aromatic vinyl compound possessing a molecular weight and haloalkylation degree sufficient not to cause charging up therein during electron beam exposure, and pattern forming methods using these materials. According to the present invention, fine resist patterns with a high resistance to dry etching and high accuracy and suitable for the production of semiconductor devices can be produced.

Abstract: In an electron beam lithography system, a layer of photoresist is exposed in vacuum by a collimated flood beam of electrons passing through an electron mask in nominal contact with the photoresist to define the exposed images. The electron mask includes a mask wafer apertured to define one or more frames supporting one or more panes of electron permeable membrane material having an average atomic number less than 14 and each supporting a patterned layer of electron absorbing material defining the mask patterns. Suitable electron permeable membrane materials include BN, BC, SiC, Si.sub.3 N.sub.4 and Al.sub.4 C.sub.3 of a thickness of 0.1 .mu.m to 2 .mu.m.

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Abstract: A method of producing a polydiacetylene thin film comprises spreading on a water surface a diacetylene compound having one or more conjugated diacetylene groups, subjecting the diacetylene compound to incomplete polymerization by irradiation with ultraviolet rays to an extent incapable of causing complete polymerization, transferring the spread film to a substrate to form a monolayer or built-up film thereon, and irradiating the transferred film with ultraviolet rays or an electron beam to complete the polymerization thereof.

Abstract: A self-developing radiation resist having extremely high sensitivity to energetic radiation, which resist is resistant to dry etching. The energetic radiation includes electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation. The resist is substantially amorphous; it has extremely high values of G.sub.s and G.sub.m, whereG.sub.s =number of main chain scission/100 electron volts absorbedandG.sub.m =number of monomers liberated/100 electron volts absorbed.The resist is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer that forms the resist includes an oxygen heteroatom linear chain organic polymer having haloalkyl substituents and is adapted to depolymerize in the absence of photoinitiators.

Abstract: An insoluble electron beam positive polyimide having the formula ##STR1## can be exposed by an electron beam to render the exposed areas soluble. The exposed areas can then be dissolved using a solvent to leave the pattern which can be used directly as an insulator layer in a semiconductor device.

Abstract: There is disclosed a radiation sensitive high polymeric material which is used, for example, for making a photo-mask which is comprising polymethyl methacrylate having an average molecular weight which is in a range from 600,000 to 1,500,000 and a tetraalkylammonium perchlorate as an orientation inhibitor wherein said polymethyl methacrylate and tetraalkylammonium perchlorate are dissolved in an acetic cellosolve as a solvent.

Abstract: Indicia, provided on a specularly reflective surface, are formed by a dot surface relief pattern featuring polygonal surfaces spaced apart to enhance scattering. The spacing of dots is characterized by a pitch in the range of 8 to 50 microns with a dot size of less than 50 microns and usually about one-half of the pitch dimension. In one embodiment, the dots may be anisotropically etched forming mesas, enhanced by gemlike polygonal facets which provide good optical contrast relative to the background surface.

Abstract: Describes a process for controlling the polymerization and cross-linked density of electrophoretic gel products useful for separation of bioorganic molecules, which process does not use initiators common to processes of the art. Electron beam polymerized gels afford the desired advantages of being ultra thin and having a high electrophoretic resolution with programmable porosity profiles.

Abstract: An article comprised of a body having a conductor pattern on at least one non-planar and non-flexible surface thereof. The article is prepared by using a three-dimensional mask having an interior surface which is a mirror image replica of the surface of the body on which the conductors are to be formed. The surface of the body is provided with material which is capable of initiating conductor formation. The interior surface of the mask then is placed over the body and in substantial registry therewith. The mask and the body then are exposed to radiation or moving material to delineate the conductor pattern. Subsequently, the mask is removed and conductors are formed.

Abstract: A layer of metal is deposited on a mask substrate and then covered with a layer of negative electron resist. A delineation of the peripheral boundaries of the desired mask geometry is carried out by means of a direct-write electron beam. After development and etching, the peripherally defined metal boundaries are all that remain on the substrate. The substrate is then covered with a positive electron resist. The mask is, next, raster scanned with a low intensity beam until a boundary is detected and then the beam intensity is increased significantly to a level sufficient to expose the positive resist. The scan and exposure continue until the mating peripheral boundary is detected and then the beam is rapidly decreased in intensity to its former low detection level. The positive resist subjected to the exposure level beam intensity is removed and a layer of metal is evaporated over the entire mask substrate.

Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Abstract: An improved electron beam resist structure comprises an organic planarizing layer which has been treated with an ion beam for a time sufficient to render it conductive and an electron beam resist layer thereover. The electron beam resist layer is preferably oxygen plasma resistant. When the resist layer is not resistant to oxygen plasma and it is desired to develop the planarizing layer by oxygen plasma, the structure additionally includes a thin hard mask layer, suitably of silicon dioxide, interposed between the conductive planarizing layer and the resist layer.

Abstract: A negative type electron beam sensitive resist film of CMS (chloro-methyl poly-styrene) is developed in a dry environment without using a vacuum system. The resist film is selectively exposed to an electron beam to form a latent image of a desired pattern therein and, then, subjected to irradiation by deep UV having a spectral component of 2537 .ANG. or shorter in an oxidizing gas such as atmospheric air. The average thickness decrease speeds during the dry development are 12 .ANG./min and 300 .ANG./min respectively for the portions exposed and unexposed to the electron beam, revealing a contrast ratio of 100 to 4 in terms of the remaining resist film thickness. A film of PGMA (poly-glycidyl metha-acrylate), and other negative type electron beam sensitive resists, may also be developed by the same method.

Abstract: The present invention relates to a radiation-sensitive positive resist comprising a copolymer obtained by copolymerizing 2,2,2-trifluoroethyl .alpha.-chloroacrylate with 2,2,3,3-tetrafluoropropyl .alpha.-chloroacrylate at a weight ratio of between 90:10 and 50:50 and a radiation-sensitive positive resist composition essentially comprising said copolymer and a solvent containing methyl cellosolve acetate as a major component. The resist and the resist composition according to the present invention exhibit high sensitivity and excellent reproducibility, so that they are useful in the production of a photo mask which is used in the production of LSI, VLSI and the like.

Abstract: A method of reproducing sub-micron images in a first imaging layer. A second imaging layer is deposited on an etch-stop film formed on the first layer, and the second imaging layer is exposed to an E-beam at low dose. The resulting standing wave exposure pattern is converted into a corresponding topology pattern having peaks and valleys by exposure to a wet developer. Ions are implanted through the second imaging layer into portions of the first imaging layer below the valley portions of the standing wave topology pattern. The second imaging layer is removed without appreciably attacking the etch-stop layer, and then the etch stop layer is removed without appreciably attacking the first imaging layer. The first imaging layer is anisotropically etched in an O.sub.2 RIE, the implanted regions serving as an etch mask. The process results in the formation of small images at high throughput.

Abstract: The invention concerns a method for repairing transmission masks. After the mask has been inspected and the position coordinates of the mask openings have been stored, these position coordinates are compared with the position coordinates of the desired mask pattern to determine the location of defects. The mask to be repaired is then blanket coated on its front side with a photoresist. Particular photoresist regions overlying the mask defects to be repaired are exposed by non-optical or optical radiation for cross-linking the photoresist, the dose required for cross-linking depending upon the respective resist employed. The non-crosslinked portions of the photoresist are subsequently removed. Gold is then applied to the rear of the mask, with the cross-linked photoresist regions acting as a substrate. After the gold has been applied, the cross-linked photoresist regions are removed, typically by plasma etching.

Abstract: The mask part 41 includes a substrate 1, a patterning means 40 and a photoemissive layer 6. The patterning means 40 includes a mask pattern 2, 3 of apertures 3 and masking areas 2 and a modifying layer 4. Ultraviolet radiation 56 is patterned by patterning means 40 before effecting electron emission 60 from the photoemissive layer 6. There is electron emission from over the apertures 3 and the masking areas 2 as the masking areas are partially transparent to incident ultraviolet radiation. The ultraviolet transmitted by the apertures and the masking areas is modified in intensity dependent on the thickness R of the modifying layer. The resuting electron emission 60 is in a patterned beam which forms a proximity effect corrected electron image of the mask pattern in the electron sensitive resist layer 63. The masking areas 2 of chromium and the modifying layer 4 of resist may be made by modifications of known methods of chromium deposition and resist exposure and development.

Abstract: The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries.The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.

Abstract: A photomask manufacturing process including step of forming on a transparent silica glass substrate a silicide film in which an alloy comprising two or more metal elements is silicidized. A resist is applied onto the silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portion of the silicide film is etched away using a dry etching process.

Abstract: A process for producing a micro Fresnel lens comprising the following steps: applying a photoresist coat to a smooth-surfaced substrate such as a glass, plastic or metal plate; exposing the resist cost to actinic radiation such as an electron beam, laser beam or UV rays; developing the exposed coat to form a resist pattern duplicating concentric rings for the desired micro Fresnel lens; forming an electrode element on the resist pattern by depositing a conductive metal such as silver or nickel by sputtering or evaporation; forming a nickel layer on the conductive metal electrode element by depositing metallic nickel or a nickel compound through electroforming wherein the pattern of the concentric rings is transferred onto the nickel layer with the conductive metal being used as an electrode; forming a nickel stamper by peeling the nickel layer from both the electrode and the substrate; and forming a micro Fresnel lens on the nickel stamper by either the photopolymerization or injection method of duplication.

Abstract: A method incorporated in a high throughput EB lithography suitable to the fabrication of VLSI semiconductor circuit. The method comprises a step of providing patterns which are delineated to join together with an overlap determined in accordance with the time interval between the respective delineations thereof by using an electron beam having a high current density and/or high energy. When a first and a second patterns having respective edge portions contacting with each other are delineated in the order of the first pattern and the second pattern by respective exposures thereof to corresponding at least single shots of an electron beam, at least one of the first and second patterns is extended in the direction perpendicular to the edge portions so that the patterns are provided with an overlap with the amount determined in accordance with the time interval between the respective shots of the electron beam to said edge portions.

Abstract: There is disclosed a mask for X-ray lithography wherein a peroxopolytungsten compound is used as an absorber, and a process for producing the same. Since this compound has a sensitivity for electron beams and light and serves as an absorber for X-rays, a mask for X-ray lithorgraphy is made only by applying this compound to a substrate, exposing the same to light to form a transferred pattern, and effecting development. Thus, the step of etching the absorber which is essential in the conventional process, is not needed. Therefore, masks having a highly accurate pattern and few defects can be produced with a high production yield.

Abstract: A complete lithographic exposure pattern is formed in accordance with this invention by forming part of the complete pattern with electron beam radiation and forming the remaining part with light radiation. The electron beam exposure pattern part delineates all of the edges of the desired complete pattern while the optical exposure pattern part fills in any remaining regions, together forming the desired complete exposure pattern. Since all edges are delineated by electron beam radiation, any radiation sensitive layer exposed to the complete pattern will develop edges characteristic of an electron beam pattern exposure.Electron beam exposure system thruput is improved because the whole pattern is not exposed by electron beam.

Abstract: Disclosed is a method of making a printed circuit board by exposing in a circuit pattern the polymeric surface of a conductive substrate coated with a polymer selected from the group consisting of polyimides, polyamide-imides, polyester-amide-imides, polysulfones, polyphenylene sulfides, and polyphenylene oxides, to an ion beam at an energy of about 50 KeV to about 2 MeV and a fluence of about 10.sup.15 to 10.sup.18 ions/cm.sup.2. The surface is then wet blasted and the portions of the polymeric surface that have been exposed to the ion beam are electrolessly plated with a metal such as nickel or copper. Also disclosed is a coated substrate comprising a metal or conductive surface and an imide polymeric coating on the surface which can be electrophoretically deposited, a portion of which has been exposed to an ion beam.

Abstract: In a fine pattern forming method for use in the manufacture of semiconductor integrated circuits, optical integrated circuits, Josephson elements, and so forth, a positive resist mixture is used which is composed of a resist having a carboxyl group in the side chain and an additive which is an oxide, halide, or organic acid salt of a bivalent metal and which, when heated, forms Ionomer to produce thermal crosslinks. The positive resist mixture is developed using a developer having carboxylic acid mixed in an organic solvent, thereby permitting the formation of an ultra-fine and high precision pattern.