Abstract: A blue-sensitive radiographic silver halide film comprises a silver halide emulsion layer comprising predominantly tabular silver halide grains that have an aspect ratio of at least 15, a grain thickness of at least 0.1 &mgr;m, and comprise at least 90 mol % bromide and up to 4 mol % iodide, based on total silver halide. Substantially all of the iodide is present in an internal localized portion of the tabular silver halide grains that excludes the surface of the grains. The tabular silver halide grains are dispersed in a hydrophilic polymeric vehicle mixture comprising at least 0.5% of oxidized gelatin, based on the total dry weight of the polymeric vehicle mixture in the emulsion layer. The tabular silver halide grains are spectrally sensitized using a combination of spectral sensitizing dyes to provide increased speed and reduced dye stain.

Abstract: A blue-sensitive, radiographic silver halide film comprises a silver halide emulsion layer comprising predominantly tabular silver halide grains that have an aspect ratio of from 8 to 14.5, a grain thickness of from about 0.15 to about 0.3 &mgr;m, and comprise at least 90 mol % bromide and up to 6 mol % iodide, based on total silver halide. The tabular silver halide grains are dispersed in a hydrophilic polymeric vehicle mixture comprising at least 0.5% of oxidized gelatin, based on the total dry weight of the polymeric vehicle mixture in the emulsion layer.

Abstract: A blue-sensitive, radiographic silver halide film comprises a silver halide emulsion layer comprising predominantly tabular silver halide grains that have an aspect ratio of at least 15, a grain thickness of at least 0.1 &mgr;m, and comprise at least 90 mol % bromide and up to 4 mol % iodide, based on total silver halide. Substantially all of the iodide is present in an internal localized portion of the tabular silver halide grains that excludes the surface of the grains. The tabular silver halide grains are dispersed in a hydrophilic polymeric vehicle mixture comprising at least 0.5% of oxidized gelatin, based on the total dry weight of the polymeric vehicle mixture in the emulsion layer.

Abstract: An imaging assembly includes a blue-sensitive, radiographic silver halide film comprises a silver halide emulsion layer comprising predominantly tabular silver halide grains that have an aspect ratio of at least 15, a grain thickness of at least 0.1 &mgr;m, and comprise at least 90 mol % bromide and up to 4 mol % iodide, based on total silver halide. The tabular silver halide grains are dispersed in a hydrophilic polymeric vehicle mixture comprising at least 0.5% of oxidized gelatin. The film is used in combination with one or more intensifying screens that absorb X-radiation and emit radiation having a wavelength of from about 300 to about 500 nm. In many embodiments, the intensifying screens include a “blue-light” emitting alkaline earth fluorohalide phosphor dispersed in a binder on a support.

Abstract: Aqueous-based photothermographic materials comprise a hydrophilic binder, preformed silver halides, an organic silver salt other than a silver carboxylate, a reducing agent composition, and one or more mercaptotriazoles as toners in one or more thermally developable imaging layers. These layers have a pH less than 7. These photothermographic materials can be used in combination with phosphor intensifying screens for radiographic imaging.

Abstract: A lithographic printing plate precursor which comprises a support having a hydrophilic surface having provided thereon in order of a layer containing a latex (layer A) and an ink-receptive layer (layer B) whose solubility at least either in water or in an aqueous solution is converted by heat, wherein at least one layer of either layer A or layer B contains a light/heat converting agent.

Abstract: High-speed black-and-white photothermographic materials can be imaged in any suitable fashion using ultraviolet, visible, infrared, or X-radiation. They can have one or more thermally developable imaging layers on either or both sides of the support and can be imaged with or without a phosphor intensifying screen in an imaging assembly. The photothermographic emulsions and materials have a net Dmin less than 0.25, and require less than 1 erg/cm2 to achieve a density of 1.00 above net Dmin.

Abstract: A light exposure method in which, when a resist layer is selectively exposed to one of X-rays containing soft X-rays, vacuum ultraviolet light rays and ultraviolet rays containing extreme ultraviolet light rays for patterning the resist layer to a pre-set shape, a high molecular material having pre-set oxygen content ratio (no) and density (&rgr;) is applied to form a resist layer having a film thickness not less than 250 nm. Since the high molecular material having the pre-set oxygen content ratio (no) and density (&rgr;) is used, a resist pattern of a better shape may be obtained even if the resist layer is of an increased thickness of not less than 250 nm. Since the film thickness of the resist layer is not less than 250 nm, it is possible to construct a lithographic process superior in etching resistance to realize ultra-fine machining than was heretofore possible.

Abstract: A chemical amplification system negative-working resist composition for an electron beam and/or an X-ray, which is excellent in sensitivity and resolution and has a rectangular profile, comprising an alkali-soluble resin having structural units represented by the following general formula (a), a compound generating an acid by irradiation of the electron beam or the X-ray, and a crosslinking agent which initiates crosslinking by the acid:

Abstract: A silver halide photosensitive material comprises at least one light-sensitive layer and at least one non-light-sensitive layer on a support. The photosensitive material contains at least one compound represented by general formula (1), and a ratio of fluorescent X-ray intensity of fluorine to fluorescent X-ray intensity of carbon, F/C, in the surface of the photosensitive material is 0.

Abstract: A method and structure to form a conductive pattern on a ceramic sheet deposits a photosensitive conductive material on a carrier and exposes a pattern of x-ray energy on the material and sinters the carrier and the material to the ceramic sheet so that only the conductive pattern of the material remains on the ceramic sheet. The structure has a conductive patterned material which includes a photosensitive agent.

Abstract: An ester compound of the following formula (1) is provided.

Abstract: A lithographic printing plate precursor which comprises a support having a hydrophilic surface having provided thereon in order of a layer containing a latex (layer A) and an ink-receptive layer (layer B) whose solubility at least either in water or in an aqueous solution is converted by heat, wherein at least one layer of either layer A or layer B contains a light/heat converting agent.

Abstract: A system has been disclosed for use in radiographic industrial non-destructive testing materials and personal monitoring, making use therefor, of tabular silver brom(oiod)ide emulsion grains having {111} major faces, an average equivalent circular diameter of at least 0.5 &mgr;m and an average thickness of less than 0.30 &mgr;m, having been chemically sensitized by the steps of adding at least a gold salt in order to provide the surface of said tabular grains with at least 6000 atoms of gold per &mgr;m2 of its grain surface and per (0.1 &mgr;m of thickness)2; and at least a sulfite salt in such an amount that the ratio of the number of gold atoms per &mgr;m2 and (concentration of said sulfite salt, expressed in mmole per mole of silver)2 is at least 200000.

Abstract: This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.

Abstract: Disclosed is a method for producing liquid crystal display devices comprising a step for forming a transparent electrode and a circuit element of semiconductor on the surface of a pair of transparent substrates, and various steps for applying a photoresist, exposing to the light, etching, releasing the photoresist, inspecting the electrodes and circuit elements of semiconductor, forming an insulating film, forming an alignment film, rubbing the alignment film, spreading spacers, applying a sealing agent, fabricating a cell, filling a liquid crystal, pasting a polarizing plate, and connecting a driver IC characterized in that a soft X-ray is irradiated to the substrate in at least one step prior to the rubbing of the alignment films to produce liquid crystal display devices, at a high yield, in which devices number of pixel defect is small.

Abstract: A light exposure method for ultra-fine processing for a semiconductor in which light transmittance of a resist layer in a wavelength range of the extreme ultraviolet (EUV) light is improved to enable ultra-fine processing more elaborate than is possible with conventional methods. In selectively exposing a resist layer to X-rays, a high molecular material obtained by replacing at least a portion of hydrogen atoms of a pre-existing resist material by a substituent containing an alkyl group and/or a substituent containing an aromatic ring is used as a high molecular material of the resist layer. By replacing the hydrogen atoms of the high molecular materials with a substituent containing an alkyl group or a substituent containing an aromatic ring, the proportion of oxygen atoms in an atom of the high molecular materials becomes relatively smaller to suppress optical absorption of the entire high molecular material. The line absorption coefficient in an x-ray wavelength is 3.80&mgr;−1 or less.

Abstract: Thermally developable compositions such thermographic and photothermographic emulsions include certain quaternary phthalazine compounds. These emulsions can be used in thermally developable materials such as thermographic and photothermographic materials to provide improved sensitometric and post processing properties. Such materials can have imaging layers on one or both sides of the support.

Abstract: Pattern exposure is performed by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm2 or less. After the pattern exposure, the resist film is developed so as to form a resist pattern.

Abstract: An radiographic imaging system for making a radiograph by a radiography apparatus using a photographic combination of a silver halide photographic light sensitive material in combination with intensifying screens, the photographic material comprising a support having a light sensitive silver halide emulsion layer on each both sides of the support, wherein the radiography apparatus conducts making a radiograph under the condition that a distance between a focal point of an X-ray tube and the photographic material is 0.9 to 3.0 m, a distance between the focal point of the X-ray tube and an object and the photographic combination is 0.3 to 1.5 m.

Abstract: A method for manufacturing a microstructure by using an X-ray includes the steps of selectively exposing a portion of a photosensitive material to the high energy light source, the selectively exposing step being carried out by using a photomask for defining a pattern of the microstructure and performing a heat-treatment for melting and deforming only an upper portion of the exposed portion of the photosensitive material, the upper portion of the exposed portion of the photosensitive material being exposed at an energy level between about 1 kJ/cm3 and about 20 kJ/cm3, when being exposed to the X-ray.

Abstract: Radiographic films containing cubic grain, high silver chloride emulsions can be used in radiographic imaging assemblies comprising intensifying screens for therapy portal localization imaging. The average silver halide grain size is from about 0.1 to about 0.18 &mgr;m and the silver halide is free of silver halide dopant compounds. These films provide excellent contrast with improved exposure latitude (at least 4:1 when measured at a gamma value of 1.5) for use in various exposure conditions and equipment.

Abstract: A method for increasing the etch resistance of positive working chemically amplified photoresist such as 193 nanometer sensitive photoresist, 157 nanometer sensitive photoresist, and deep-UV 248 nanometer sensitive photoresist while improving and maintaining fidelity of lithographic features and critical dimensions. The method involves coating and drying a photosensitive composition onto a substrate. The photosensitive composition comprises a water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation and a compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy.

Abstract: A single-side coated light-sensitive silver halide photographic film material has been disclosed, having on one side of a subbed support, one or more light-sensitive silver halide emulsion layer(s) overcoated with an outermost protective layer; and, at the other side of said support, a backing layer, covered with a protective outermost layer, characterized in that at least said backing layer is provided with a layer wherein, besides a cross-linked or cross-linkable first binder an organic component free from cross-linking upon reaction with a hardener is present as a second binder having a low molecular weight.

Abstract: This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.

Abstract: A method has been described for preparing an ultrathin tabular grain emulsion rich in silver bromide, having {111} major faces, wherein tabular grains having a thickness of less than 0.08 &mgr;m exhibit an average aspect ratio of more than 5:1 and account for at least 75% by number of hexagonal grains and a coefficient of variation on average equivalent surface area of less than 0.50. The process is characterized in that during formation, (a) pH is maintained from 0.8 to 10; (b) a gelatino-peptizer is present in a concentration of 0 to 50 g per liter of dispersing medium, and (c) pBr having a value of at least 1.8 is maintained during grain nucleation and pBr is maintained at less than 2.4 during growth provided that a gelatin peptizer which is free from calcium ions and has a methionine content of less than 30 micromoles per gram of gelatino-peptizer is present.

Abstract: A deformable holder, system, and process where long range errors (any of lithography, metrology, or overlay errors) between the image of a mask and an existing pattern on a wafer from a number of potential sources are corrected. The long range errors are determined using either a through-the-lens alignment metrology system or an around-the-lens metrology system. Deformation values are determined to compensate for the longe range errors. The deformation values are determined by either solving simultaneous equations or by finite-element linear-stress-analysis (FEA). The mask or wafer is then distorted, in-plane, by an amount related to the determined deformation values using an actuator such an a piezoelectric ceramic to push or pull the mask or wafer to substantially realign the projected image of the mask and the existing pattern on the wafer.

Abstract: The use of a resist latent image alignment mark in lieu of using dedicated discrete alignment targets defined on a semiconductor wafer and the use of field oxide step heights for alignment during the fabrication of circuit devices are disclosed. A resist latent image alignment mark is formed in a layer of photoresist material and utilized to position a mask for exposing portions of the photoresist to a radiation source to pattern locations for active areas on a semiconductor substrate. A LOCOS isolation structure is then formed around the active areas. The isolation structure is formed such that the depth of the isolation structure is adjusted to a particular radiation source wavelength. The depth of the isolation structure can then be used as a diffraction grating for stepper alignment. The height of the isolation structure can also be used as a diffraction grating for stepper alignment.

Abstract: A direct X-ray system for industrial radiography like non-destructive testing applications, and personal monitoring, being particularly less sensitive to pressure phenomena, has been disclosed, said system consisting of a direct X-ray black-and-white negative-working radiographic film material, comprised of a transparent support coated on at least one side thereof with a tabular grain emulsion layer, substantially free from spectrally sensitizing dyes, in which at least 50 percent of total grain projected area of all grains is accounted for by silver bromoiodide tabular grains having an iodide content of less than 5 mole %, based on silver, having an average aspect ratio of at least 2, and having a volume greater than 0.

Abstract: A positive resist composition comprises: a compound capable of directly or indirectly generating a radical (A) on irradiation with an energy ray; or a cyclic ether compound.

Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.

Abstract: A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: 1 2

Abstract: The use of a resist latent image alignment mark in lieu of using dedicated discrete alignment targets defined on a semiconductor wafer and the use of field oxide step heights for alignment during the fabrication of circuit devices are disclosed. A resist latent image alignment mark is formed in a layer of photoresist material and utilized to position a mask for exposing portions of the photoresist to a radiation source to pattern locations for active areas on a semiconductor substrate. A LOCOS isolation structure is then formed around the active areas. The isolation structure is formed such that the depth of the isolation structure is adjusted to a particular radiation source wavelength. The depth of the isolation structure can then be used as a diffraction grating for stepper alignment. The height of the isolation structure can also be tuned to a particular radiation source wavelength, such that the isolation structure height may also be used as a diffraction grating for stepper alignment.

Abstract: The use of a resist latent image alignment mark in lieu of using dedicated discrete alignment targets defined on a semiconductor wafer and the use of field oxide step heights for alignment during the fabrication of circuit devices are disclosed. A resist latent image alignment mark is formed in a layer of photoresist material and utilized to position a mask for exposing portions of the photoresist to a radiation source to pattern locations for active areas on a semiconductor substrate. A LOCOS isolation structure is then formed around the active areas. The isolation structure is formed such that the depth of the isolation structure is adjusted to a particular radiation source wavelength. The depth of the isolation structure can then be used as a diffraction grating for stepper alignment. The height of the isolation structure can also be used as a diffraction grating for stepper alignment.

Abstract: The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: A radiographic imaging assembly has first and second radiographic silver halide films in association with two fluorescent intensifying screens. Between one set of screen and film is a magenta filter having a density of at least 0.3 to provide improved exposure latitude for use in various exposure conditions and equipment. The magenta filter comprises a transparent support having a hydrophilic layer disposed thereon, which layer includes sufficient dyes or pigments that absorb in the range of from about 500 to about 600 nm. These dyes or pigments are dispersed in a hydrophilic binder to provide the desired density. The magenta filter is laminated to one of the screens with its hydrophilic layer in contact with the screen.

Abstract: A radiographic imaging assembly has two different (“asymmetric”) fluorescent intensifying screens on either side of two radiographic silver halide films. The two fluorescent intensifying screens differ in speed by at least 0.1 logE. This imaging assembly provides high contrast images and improved exposure latitude for use in various exposure conditions and equipment. The two films can be the same or different (for example, providing images of different contrast).

Abstract: Disclosed is a polymer for use in a chemically amplified resist, a resist composition including such a polymer is suitable for use in a chemically amplified resist, which is sensitive to far ultraviolet rays such as KrF or ArF excimer laser and forms a photoresist pattern having low dependence on and good adhesion to substrate, high transparency in the wavelength range of the above radiation, strong resistance to dry etching, and excellencies in sensitivity, resolution and developability. The resist composition can have a stronger etching resistance with a maximized content of unsaturated aliphatic ring in the polymer and a reduced edge roughness of the photoresist pattern with an alkoxyalkyl acrylate monomer employed.

Abstract: This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.

Abstract: A radiographic imaging assembly has a first radiographic silver halide film in association with a second radiographic silver halide film wherein the ratio of photographic speed of the two films is greater than 0.15 logE. The combination of two films is used with two fluorescent intensifying screens that also have photographic speeds that differ by at least 0.1 log E. This imaging assembly provides images with excellent contrast and improved exposure latitude for use in various exposure conditions and equipment.

Abstract: A radiographic imaging assembly has a first radiographic silver halide film that provides high contrast images in association with a second radiographic silver halide film that provides lower contrast images. The combination of two films, with or without one or more fluorescent intensifying screens, provides images with excellent contrast and improved exposure latitude for use in various exposure conditions and equipment. The ratio of contrast of images provided by the first and second radiographic silver halide films is at least 1.25.

Abstract: A radiographic imaging assembly has a first radiographic silver halide film in association with a second radiographic silver halide film wherein the ratio of photographic speed of the two films is greater than 0.15 logE. The combination of two films, with or without one or more fluorescent intensifying screens, provides images with excellent contrast and improved exposure latitude for use in various exposure conditions and equipment.

Abstract: A radiographic imaging assembly has first and second radiographic silver halide films in association with two fluorescent intensifying screens. Between one set of screen and film is a neutral density filter having a density of at least 0.3 to provide with improved exposure latitude for use in various exposure conditions and equipment. The neutral density filter comprises a transparent support having a hydrophilic neutral density filter layer disposed thereon, which layer includes sufficient silver metal, colloidal carbon, or exposed and processed silver halide in a hydrophilic binder to provide the desired density. The neutral density filter is laminated to one of the screens with its hydrophilic layer in contact with the screen.

Abstract: A radiographic imaging assembly has first and second radiographic silver halide films in association with two fluorescent intensifying screens. Disposed between one set of screen and film is a neutral density filter having a density of at least 0.3 to provide improved exposure latitude for use in various exposure conditions and equipment.

Abstract: Radiographic films containing cubic grain, high silver chloride emulsions can be used in radiographic imaging assemblies comprising intensifying screens for therapy portal localization imaging. The average silver halide grain size is from about 0.1 to about 0.18 &mgr;m and the silver halide is free of silver halide dopant compounds. These films provide excellent contrast with improved exposure latitude for use in various exposure conditions and equipment.

Abstract: A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: A radiographic silver halide film material and a radiographic screen/film combination has been disclosed, said material having in at least one light-sensitive layer thereof an emulsion comprising {111} tabular silver halide grains rich in silver bromide, spectrally sensitive to irradiation in the wavelength range between 540 and 555 nm by the presence of a combination of at least one J-aggregating spectrally sensitizing cyanine dye according to the formula (I) and of at least one additional cyanine dye providing a shift of maximum absorption wavelength of said combination of less than 10 nm versus in the absence thereof, wherein said additional cyanine dye is at least one monomethine cyanine dye according to the formula (II), essentially having a solubilizing group or a latent solubilizing group, said dyes having been given in the description and in the claims of the present invention.

Abstract: Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer.

Abstract: Radiographic films containing cubic grain, high silver chloride emulsions can be used in radiographic imaging assemblies comprising intensifying screens for therapy portal imaging. The average silver halide grain size is from about 0.1 to about 0.18 &mgr;m. These films provide excellent contrast with improved exposure latitude for use in various exposure conditions and equipment.

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50% of the dose-to-clear for a non-patterned exposure.