Abstract: There is disclosed a method for forming an X-ray image formed with less exposure than is customary and having an excellent resolution. The X-ray image can be formed by subjecting a light-sensitive material comprising a support, having provided thereon a light-sensitive silver halide emulsion layer containing a silver halide emulsion sensitized with a sensitizing dye represented by the following Formula (I) on only one side of the support to photographing via a green color emission fluorescent screen with a soft X-ray emitted from an X-ray generating device with a tube voltage of 25.sup.kv to 40.sup.kv. In the characteristic curve represented by a rectangular coordinate constituted by optical density and logarithmic exposure, the average gradation shown by the gradient of a line drawn by connecting the point at which 0.25 is added to the minimum density (hereinafter referred to as Dmin) to the point at which 2.0 is added to Dmin is set at 2.8 to 3.

Abstract: The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.

Abstract: A method of producing microstructures having regions of different structural height includes providing a layer of positive resist material that is sensitive to X-ray radiation with microstructures on a side facing a source of X-rays. Using a mask, the layer of a positive resist material is partially irradiated with the X-rays. The irradiated regions are removed with the aid of a developer.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Abstract: A wide latitude, high resolution radiographic system having a relative speed of at least 150 and a contrast transfer function of at least 0.30 when measured at 6 line pairs per millimeter, comprises at least one X-ray intensifying screen in operative association with a photosensitive silver halide element having a maximum contrast of less than or equal to 3.0 produces superior images, particularly chest images over a wide range of exposures, without the decrease in image quality or contrast normally seen in wide latitude systems.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Abstract: Microminiature pressure transducers are formed on semiconductor substrates such as silicon and include a membrane which spans a cavity over the substrate, with the membrane being mounted to and sealed to the substrate at the peripheral edges of the membrane. The bottom of the cavity forms an overpressure stop to prevent over deflections of the membrane toward the substrate. An overpressure stop formed as a bridge of a material such as nickel extends above the membrane and is spaced therefrom to allow the membrane to deflect freely under normal pressure situations but prevent over deflections. The thickness of the polysilicon membrane and the spacing between the membrane and the overpressure stops is preferably in the range of 10 micrometers or less, and typically in the range of one micrometer. The overpressure stop bridge is formed utilizing deep X-ray lithography to form a well-defined bridge structure.

Abstract: A high energy radiation-sensitive, pattern-forming resist composition comprising a polymer of the formula (I): ##STR1## in which R.sub.1 represents an alkyl groups, cyano group, --CH.sub.2 OH or --CH.sub.2 CO.sub.2 R wherein R represents an alkyl group, R.sub.2 represents a hydrocarbon group containing at least one silicon atom, R.sub.3 represents a group capable of causing crosslinking of the polymer upon application of heat, and m and n each is an integer. The resist composition is particularly useful as a top layer resist of the bi-level resist system, and the exposed top layer resist can be stably developed because of a remarkably increased difference of the solubility in the developer of the exposed and unexposed areas thereof.

Abstract: A novel calixarene derivative, viz. acetylated methyl-calix[n]arene (n is from 4 to 8), exhibits high solubilities in various organic solvents. A film of this compound can easily be formed by a conventional solution coating method such as spin coating, and the obtained film is hard and heat-resistant. A pattern of negative type can be formed in the obtained film by selectively irradiating the film with a high-energy ray such as ion beam, electron beam or X-ray to polymerize and insolubilize the irradiated regions and then removing the unirradiated region by dissolution in an organic solvent.

Abstract: A mask structure for lithography including an annular base plate supporting a peripheral portion of a masking-material-holding film provided on a surface thereof with a desired pattern of the making material is provided which is characterized in that the masking-material-holding film and the base plate are bonded together at an outer peripheral surface, which is connected smoothly or with an appropriate angle to the topmost flat end surface of the base plate and is at a lower level than the topmost flat end surface of the base plate, or at a surface contiguous to the outer peripheral surface.

Abstract: To achieve higher resolution integration in semiconductor device fabrication using electron beam (EB) or X-ray lithography or a method of lithography is disclosed in which: (1) an EB or X-ray resist material is mixed with an absorbing material for ultraviolet (UV)-rays; (2) the resist layer is selectively exposed to the EB or X-ray with the total irradiation density less than applied in a conventional EB or X-ray exposure; and (3) the entire surface of the resist layer is further exposed to the UV-ray for a total irradiation period less than a minimum level required to induce a reaction in said resist layer. Resist materials such as chloromethylated polystyrene (CMS), polydiarylorthophtalate (PDOP), and polymethylmethacrylate (PMMA), each mixed with p-azido acetophenone as the UV-ray absorbing material improve contrast and resolution of the resist layer. Other UV-ray absorbing materials such as p-azido benzoic acid and 3-sulfonylazido benzoic acid achieve the same result.

Abstract: A method of obtaining a mask for X-ray lithography having a thin oxidized metal membrane supported on an annular silicon base. The method consists of the following steps: (a) deposition of a metal layer on a silicon wafer; (b) oxidation of the metal layer to form a continuous thin oxide layer; (c) etching selectively a portion of the backside of said substrate, obtaining a thin membrane of oxidized metal at the etched portion; and (d) obtaining a pattern delineation through a photoresist on said membrane framed by the silicon substrate. A most preferred deposited metal is aluminum which is converted to aluminum oxide. Then a portion of the silicon substrate is removed in order to expose the aluminum oxide membrane attached to the remaining silicon substrate. The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.

Abstract: A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.

Abstract: A method for selectively exposing a resist layer using a charged particle beam to form a desired pattern. The method includes the steps of repeatedly exposing a basic pattern segment using a charged particle beam so as to expose a pattern within a first predetermined region of the resist layer by a main exposure. The pattern within the first predetermined region is a multiple repetition of the basic pattern segment. A second predetermined region of the layer is exposed by auxiliary exposure at an intensity level lower than that of the main exposure. The second predetermined region excludes the central portions of the first predetermined region and includes a region in which a proximity effect occurs due to the main exposure.

Abstract: Fabrication of devices of micron and submicron minimum feature size is accomplished by lithographic processing involving a back focal plane filter. A particularly important fabrication approach depends upon mask patterns which produce images based on descrimination as between scattered and unscattered radiation.

Abstract: A radiation sensitive mixture suitable for producing relief patterns contains(a) a polymeric binder which is insoluble in water but soluble in aqueous alkaline solutions and(b) an organic compound whose solubility in an aqueous alkaline developer is increased by the action of acid and which contains at least one acid cleavable group and additionally a group which forms a strong acid on irradiation,wherein the polymeric binder (a) contains from 5 to 35 mol % of monomer units having acid labile groups as copolymerized or cocondensed units or acid labile groups introduced by polymer analaogous reaction.

Abstract: A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.

Abstract: A one component resist material useful for deep ultraviolet, x-ray, and electron radiation has been found. Such material involves a substituent that is sensitive to acid and a moiety in the chain which both induces scission and provides an acid functionally upon such scission.

Abstract: A method of obtaining a mask for X-ray lithography having a thin oxide film supported on an annular silicon base includes the following steps:(a) deposition of an oxide layer such as titania or zirconia, on a silicon or copper substrate;(b) etching selectively a portion of the backside of the substrate, obtaining a membrane on the etched portion; and(c) obtaining a pattern delineation through a photoresist on the membrane framed by the silicon or copper substrate.The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.

Abstract: A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon, e.g. aqueous HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing compositions is in tensile stress as required for lithography, but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.

Abstract: The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.

Abstract: The use of a surface treatment approach to lithography, depending on a radiation-induced change in hydrophilicity, shows particular promise for deep UV, vacuum ultraviolet and x-ray lithography. For example, hydrophobic chlorinated polystyrene is selectively irradiated in the presence of oxygen producing local hydrophilic regions. Subsequent treatment of these hydrophilic regions with water followed by an organometallic or inorganic gas such as TiCl.sub.4 yields a patterned, surface metal oxide suitable as, for example, an etch mask for further patterning of the underlying polymer film and device regions.

Abstract: When a pattern is to be fabricated by a lithography using radiation on a heavy metal layer formed on a substrate, secondary electrons are generated in a diverging form from the heavy metal layer by irradiation with a radioactive ray to expose the resist. As a result, the accuracy of the pattern to be formed on the resist is reduced. In order to prevent this, a layer to be transferred, a substrate to be worked, a mask and so on are formed with a film capable of absorbing the secondary electrons so that secondary electrons generated from the heavy metal layer may not reach the resist film. Although a pattern having a thickness of 2 microns or less could not be fabricated according to the prior art, a pattern as thin as 1.5 microns can be fabricated by the method of the present invention.

Abstract: Combination of photosensitive elements for use in radiography consisting of a pair of radiographic fluorescent screens and a double-side coated silver halide radiographic element. Each screen is arranged adjacent to each silver halide layer and each screen is capable of imagewise emitting radiation to which the adjacent silver halide layer is sensitive when imagewise exposed to X radiation. The combination is characterized in that one fluorescent screen emits a first radiation in a first wavelength region of the electromagnetic spectrum and the other fluorescent screen emits a second radiation in a second wavelength region of the electromagnetic spectrum, and each silver halide layer is substantially insensitive to the radiation emitted by the opposite screen.

Abstract: The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

Abstract: A mask structure for lithography comprising an annular base plate supporting a peripheral portion of a masking-material-holding film provided on a surface thereof with a desired pattern of the masking material is provided which is characterized in that the masking-material-holding film and the base plate are bonded together at an outer peripheral surface, which is connected smoothly or with an appropriate angle to the topmost flat end surface of the base plate and is at a lower level than the topmost flat end surface of the base plate, or at a surface contiguous to the outer peripheral surface.

Abstract: The present invention provides a method of pattern fabrication by radiation-induced graft copolymerization which enables not only the fabrication of a very fine resist pattern in a very small exposure dosage but also excellent etching fabrication by utilizing the current dry etching process through the pattern fabrication by making use of a resist capable of causing radiation-induced graft copolymerization and having excellent dry etching resistance, i.e., a poly(methacrylate) having a phenyl group, polystyrene, or its derivative.

Abstract: The photoconductive layer of an electrophotographic plate, such as used to record radiographic patterns, is overcoated with a thin dielectric layer having luminescing (e.g., fluorescing or phosphorescing) properties. Upon being uniformly charged and imagewise exposed to actinic radiation (i.e. radiation to which the photoconductive layer responds), the resulting charge pattern is developed with toner. The toner-bearing surface of the electrophotographic plate is irradiated with radiation adapted to excite the luminescent overcoat. The toner image serves, in effect, to mask any luminescence by the underlying overcoat, thereby giving rise to a luminescent contrast image which may be recovered by laser scanning or CCD techniques, or photographed directly.

Abstract: A radiation image recording and reproducing method comprising the steps of exposing a stimulable phosphor containing a bivalent europium activated complex halide phosphor represented by the formula:BaFX.xNaX':aEu.sup.2+wherein X and X' each designated at least one of Cl, Br and I, x is a number satisfying 0<x.ltoreq.10.sup.-1, and "a" is a number satisfying 0<a.ltoreq.0.2, to a radiation passing through an object to have the radiation energy stored in said stimulable phosphor, stimulating said stimulable phosphor by an electromagnetic wave having a wavelength within the range of 450 nm to 1,100 nm, thereby causing said stimulable phosphor to emit said radiation energy in the form of light, and detecting the emitted light.

Abstract: An X-ray exposure mask provided, including an electrically conductive layer being translucent to an X-ray beam and a light beam, a gold layer formed on the electrically conductive layer, in a thickness so as to be translucent to the X-ray beam and the light beam, for forming a plating base in combination with the electrically conductive layer; a stencil being translucent to the X-ray beam and the light beam and partially formed on the electrically conductive layer so as to have patterns for forming a microscopic patterns onto a semiconductor wafer; and a gold X-ray absorber plated on the plating base for filling apertures of the stencil patterns. A mask alignment for the X-ray mask to the wafer is precisely executed by using the light beam passing through the stencil.

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Abstract: A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.

Abstract: The invention relates to a microlithographic process for producing circuits using organic, conductive films sensitive to electromagnetic radiation and to charged particles.This process for producing electricity conducting zones on a substrate consists of depositing on said substrate a coating of an electricity conducting, organic compound, such as alkyl pyridinium-tetracyanoquinodimethane and then irradiating certain locations (2,3) of the coating by means of charged particles and/or electromagnetic radiation, so that the irradiated locations become insulating and that on the organic compound coating the electricity conducting zones (1) are directly formed at the desired locations.

Abstract: This invention relates to a gradient radiation intensifying screen having as an integral part thereof a tonable, photosensitive layer bearing a toned, anatomically correct, unsharp halftone image.

Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Abstract: A self-developing radiation resist having extremely high sensitivity to energetic radiation, which resist is resistant to dry etching. The energetic radiation includes electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation. The resist is substantially amorphous; it has extremely high values of G.sub.s and G.sub.m, whereG.sub.s =number of main chain scission/100 electron volts absorbedandG.sub.m =number of monomers liberated/100 electron volts absorbed.The resist is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer that forms the resist includes an oxygen heteroatom linear chain organic polymer having haloalkyl substituents and is adapted to depolymerize in the absence of photoinitiators.

Abstract: A method for forming an image comprising the steps of:(a) imagewise exposing a light-sensitive silver halide photographic material comprising a support having provided on at least one surface thereof a light-sensitive silver halide emulsion, at least one of an active halogen hardening agent and a bisvinylsulfone hardening agent, and a slightly water-soluble basic metallic compound; and(b) developing said exposed material with a developer solution containing a compound capable of reacting with said basic metallic compound to release a base.

Abstract: A hydrogen-free boron-containing membrane in tension exhibits advantageous properties for use as a mask in X-ray lithography.

Abstract: A positive resist film is formed on the major surface of a semiconductor substrate, to be irradiated with X-rays through an X-ray mask. The X-ray mask is formed by a joined member of an X-ray transmittable substrate and an X-ray absorber, and the X-ray absorber has an opening section of a T shape, in order to change the amount of transmission of the X-rays in desired positions. After the irradiation with the X-rays, the positive resist film is developed to obtain a resist film having an opening section of a desired T shape. A film for providing a control electrode is formed in the opening section of the resist film and the resist film is removed, thereby to form a T-shaped control electrode on the semiconductor substrate.

Abstract: A silver halide photographic light-sensitive material and a process for processing it are disclosed. The light-sensitive material is improved in photographic sensitivity, drying property and anti-roller-mark property and is suitable for the disclosed ultra-rapid processing by an automatic processor in which the photographic material is processed for the time of 20 sec to 60 sec in total. The light-sensitive material comprises a support having on at least one side thereof one or more hydrophilic layers containing gelatin which comprise at least one light-sensitive silver halide emulsion layer. An amount of the gelatin contained in said hydrophilic layer or layers is within the range of from 1.90 to 3.50 g/m.sup.2 and a swelling amount of said hydrophilic layer or layers is within the range of from 30 to 58 g/m.sup.2 when said light-sensitive material is treated in a specific condition for 15 sec. at 35.degree. C.

Abstract: A silver halide photographic material is capable of super-rapid processing with the total time of 20 to 60 minutes and is high in sensitivity, low in fogginess and excellent in pressure resistance and graininess. The photographic material is comprises a support bearing a hydrophilic colloial layer including at least one light sensitive silver halide emulsion layer thereon, whereinsilver halide grains contained in the silver halide emulsion layer are mainly comprised of tabular grains which have an aspect ratio of the grain size to the grain thickness of not lower than 5, and the projective areas of the whole tabular grain occupy not less than 50% of the projective areas of the whole silver halide grain in the emulsion layer,the melting time of the silver halide photographic light-sensitive material is within the range of from not shorter than 45 minutes, andon the side bearing the hydrophilic colloidal layer containing the silver halide emulsion layer, an amount of gelatin is within the range of from 2.

Abstract: There is disclosed a method of producing a transition metal pattern on a glass or glass-ceramic substrate by selective exudation of a transition metal from a glass substrate containing the metal as an oxide. The selective exudation is effected by applying an intense, well-focused source of energy to a glass in a pattern corresponding to the desired metal pattern. This develops localized heating, and thereby causes corresponding localized metal exudation from the glass. The metal pattern may be rendered electroconductive, and may constitute a pattern of interconnecting lines for microcircuitry.

Abstract: A pattern forming method in which a water-soluble organic film absorbing secondary electrons or soft X-rays is formed on a resist layer and thereafter, pattern exposure, development are carried out. The water-soluble organic film containing halogen, sulfur, metal atom, etc. absorbs secondary electrons or soft X-rays which are generated from a mask in X-rays exposure so that only X-rays passed through openings of the mask are applied to a resist layer and a super fine pattern of high aspect ratio can be obtained.

Abstract: An article comprised of a body having a conductor pattern on at least one non-planar and non-flexible surface thereof. The article is prepared by using a three-dimensional mask having an interior surface which is a mirror image replica of the surface of the body on which the conductors are to be formed. The surface of the body is provided with material which is capable of initiating conductor formation. The interior surface of the mask then is placed over the body and in substantial registry therewith. The mask and the body then are exposed to radiation or moving material to delineate the conductor pattern. Subsequently, the mask is removed and conductors are formed.

Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Abstract: A process for developing a photographic material containing on a support an image-wise exposed silver halide emulsion layer of which the silver halide is substantially silver chloride and in which the photographic material before its exposure contains already at least one silver halide developing agent in a hydrophilic colloid binder in waterpermeable relationship with the silver halide, said process containing the step of contacting the exposed photographic material with an aqueous alkaline liquid, called activator liquid, being initially substantially free from developing agent(s), said contacting being not followed by a silver complex diffusion transfer processing, characterized in that said aqueous alkaline liquid contains a primary and/or secondary amine.

Abstract: Process for preparing a photographic emulsion containing tabular silver halide grains, which exhibit high speed upon sensitization, having a thickness of about 0.05 to 0.5 .mu.m, average grain volume of about 0.05 to 1.0 .mu.m.sup.3 and mean aspect ratio of greater than 2:1 comprisingA. adding silver nitrate to a vessel containing dispersing medium/bromide mixture, initial bromide ion concentration 0.08 to 0.25 N, to form tabular seed grains;B. adding an ammoniacal base solution, to achieve 0.002 to 0.2 normal of the base (e.g., after at least 2% of total silver nitrate has been added); andC. adding additional silver nitrate and halide, e.g., Br.sup.- or BrI.sup.-, by balanced double jet procedure. The emulsions are used in photographic elements for x-ray, graphic arts, etc.

Abstract: Radiation-sensitive interpolymers comprising 10-90 mole % of a polymerized maleimide monomer are useful as resists having high sensitivity to E-beams or X-rays.

Abstract: A method of producing a passive optical device having optical components including at least one reflection grating, at least one port for polychromatic light and a plurality of ports for monochromatic light. The method includes producing the optical components of the device utilizing X-ray depth lithography so that the grating lines of the reflection grating are parallel to the direction of X-ray radiation emitted as part of the X-ray depth lithography.