Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.

Abstract: There are provided a photosensitive resin composition containing at least a polymer compound having a sugar structure, which has at least two species of functional groups cleavable in the presence of an acid, and a photo acid generator generating an acid by radiation of an electromagnetic wave or a beam of an electrically charged particle, and in addition, a resist composition, a method for fabricating a patterned substrate for fabricating a semiconductor device and the like, and a device such as a highly integrated semiconductor and the like.

Abstract: A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

Abstract: A direct X-ray system for industrial radiography, like non-destructive testing applications, and personal monitoring, being particularly less sensitive to pressure phenomena, has been disclosed, said system consisting of a direct X-ray black-and-white negative-working radiographic film material, comprised of a transparent support coated on at least one side thereof with a tabular grain emulsion layer, substantially free from spectrally sensitizing dyes, in which at least 50 percent of total grain projected area of all grains is accounted for by silver bromoiodide tabular grains having an iodide content of less than 5 mole %, based on silver, having an average aspect ratio of at least 2, and having a volume greater than 0.

Abstract: The use of a resist latent image alignment mark in lieu of using dedicated discrete alignment targets defined on a semiconductor wafer and the use of field oxide step heights for alignment during the fabrication of circuit devices are disclosed. A resist latent image alignment mark is formed in a layer of photoresist material and utilized to position a mask for exposing portions of the photoresist to a radiation source to pattern locations for active areas on a semiconductor substrate. A LOCOS isolation structure is then formed around the active areas. The isolation structure is formed such that the depth of the isolation structure is adjusted to a particular radiation source wavelength. The depth of the isolation structure can then be used as a diffraction grating for stepper alignment. The height of the isolation structure can also be used as a diffraction grating for stepper alignment.

Abstract: A system has been disclosed for use in radiographic industrial non-destructive testing materials and personal monitoring, making use therefor, of tabular silver brom(oiod)ide emulsion grains having {111} major faces, an average equivalent circular diameter of at least 0.5 &mgr;m and an average thickness of less than 0.30 &mgr;m, having been chemically sensitized by the steps of adding at least a gold salt in order to provide the surface of said tabular grains with at least 6000 atoms of gold per &mgr;m2 of its grain surface and per (0.1 &mgr;m of thickness)2; and at least a sulfite salt in such an amount that the ratio of the number of gold atoms per &mgr;m2 and (concentration of said sulfite salt, expressed in mmole per mole of silver)2 is at least 200000.

Abstract: A method to decrease the surface roughness of exposed PMMA surfaces has been discovered. PMMA surface roughness was decreased by a post-exposure heat treatment of less than 70° C. The optimum post-exposure heat treatment to produce a PMMA microstructures with a smooth surface was found to be about 60° C. for about 30 min. The structural features of post-exposure heat-treated PMMA patterns were not statistically different from otherwise identical features of untreated PMMA patterns. This method produces a smoother PMMA structure that may then optionally be glued on a substrate or that may be assembled with other PMMA structures into a three-dimensional or multilayer microstructure.

Abstract: Ultra-high resolution lithographic imaging and printing refers to the reduction in printed feature size, or “demagnification” obtained by the use of “bias”. A new meaning is given to Next Generation Lithography (NGL) in terms of fidelity in the reproduction of masks. Applying the classical manifestation of Fresnel diffraction, the mask pattern features are “demagnified” by “bias”. Classically, bias is minimized but the invention uses it to advantage so that: (i) mask-wafer gaps are thus enlarged; (ii) mask features are enlarged 3×-6× for a given printed feature size (cf. classically 1:1 in proximity lithography); (iii) the technique is extensible to beyond 25 nm feature sizes and (iv) exposure times are reduced. The invention is specifically demonstrated in proximity X-ray lithography but has a generic extension to all lithographies that can use out of focus imaging to produce ultra-high resolution.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device.

Abstract: An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.

Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: 1

Abstract: Localization radiographic films containing rhodium-doped, cubic grain, high silver chloride emulsions can be used in radiographic imaging assemblies comprising intensifying screens for therapy imaging. The average silver halide grain size is from 0.20 to about 0.30 &mgr;m, and they comprise at least 80 mol % chloride based on total silver. These films provide colder image tones and reduced processing non-uniformities.

Abstract: High performance radiographic films exhibit visually adaptive contrast when imaged in radiographic imaging assemblies comprising an intensifying screen on both sides. These films having a single silver halide emulsion on each side of a film support and are free of particulate dyes that are conventionally used to control crossover. In addition, the films can be rapidly processed to provide the desired image having visually adaptive contrast, that is the upper scale contrast is at least 1.5 times the lower scale contrast. Thus, dense objects can be better seen at the higher densities of the radiographic image without any adverse sensitometric changes in the lower scale densities. These films are useful for general-purpose radiographic imaging using a wide variety of exposure and processing conditions.

Abstract: High performance, very high contrast radiographic films exhibit visually adaptive contrast when imaged in radiographic imaging assemblies comprising intensifying screens. These films having at least two tabular silver halide emulsions on each side of a film support, and the emulsion closest to the film support on each side includes chemistry to control crossover and a rhodium dopant and has higher photographic speeds than the other emulsions. In addition, the films can be rapidly processed to provide images having visually adaptive contrast wherein the upper scale contrast is at least 1.7 times the lower scale contrast. These films are particularly useful for orthopedic imaging.

Abstract: A radiographic film material is described including a transparent film support having first and second major surfaces coated with a subbing layer, optionally overcoated with an antihalation undercoat. Coated adjacent on each side of the film support is a light-sensitive silver halide emulsion overcoated with a protective antistress layer. The emulsion layer has chemically and spectrally sensitized {111} tabular hexagonal grains or crystals, having silver iodide in an amount of at most 3 mole %, based on silver, covering at least 50% of the total projective surface of all grains, having an average grain thickness of less than 0.30 &mgr;m. The antistress layer, or the optional antihalation undercoat or both includes a N-amino mercapto-triazole compound containing one or more alkali soluble group(s). A radiographic screen/film combination is also described including the film material.

Abstract: A black-and-white silver halide photographic film material, particularly suitable for use in radiography, has been disclosed, said material comprising a transparent film support having first and second major surfaces coated with a subbing layer, further coated adjacent thereto on one side (for a single-side coated material) or on both sides (for a duplitized material) of said film support and overcoated with a protective antistress layer, a light-sensitive silver halide emulsion layer having chemically and spectrally sensitized {111} tabular hexagonal grains, accounting for at least 50% of the total projective surface of all grains, wherein said film material is coated with a low amount of silver and wherein said protective antistress layer(s)and/or another hydrophilic non-light-sensitive layer comprise(s) a compound according to general formula (I) in an amount of at least 0.5 mmole per mole of coated silver halide, as claimed.

Abstract: A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Abstract: This invention concerns a non-spectral sensitized radiographic product for exposure to ionizing radiation of energy equal to at least 40 keV containing at least 50 mg/dm2, which comprises a support covered with on at least one of its sides with a layer of silver halide emulsion in which at least 50% of the grains are tabular grains, and at least 0.05 mmol/mol Ag of a compound of formula wherein R1 and R2 are each independently an atom of hydrogen, an alkyl group comprising from 1 to 5 atoms of carbon, substituted or not, a hydroxyl group, or a benzyl group; R3 and R4 are each independently a hydrogen, or an alkyl group from 1 to 5 atoms of carbon, or jointly comprise the atoms necessary to form a heterocycle of 4 to 6 atoms, substituted or not. The product for industrial radiography of the invention provides an improved keeping of the latent image and higher speed.

Abstract: The present invention relates to a process for forming a photoresist pattern by employing a silylation process, and particularly to a method for forming a photoresist pattern according to a top surface imaging (TSI) process using a photoresist composition comprising a cross-linker having a cross-linker monomer of the following Chemical Formula 1 or 2. The photoresist composition containing a polymer of the above cross-linker monomer is preferably used in a TSI process which has been optimized by controlling the conditions of each step, such as temperature and time, thereby obtaining an ultrafine pattern that can be more efficiently applied to a 4 G or 16 G DRAM semiconductor fabrication process: wherein, R1, R2, R3, R5, R6, R7, R, m and n are as defined in the specification attached hereto.

Abstract: A silver halide photographic material has been provided, having in a layer arrangement at one or both sides of a subbed support, corresponding with a single-side coated or a double-side coated material respectively, one or more layer(s) comprising a light-sensitive silver halide emulsion, one or more protective antistress layer(s) and, optionally, an outermost afterlayer, wherein at least one of said layers, subbing layer(s) inclusive, further comprises means in order to provide, when conditioned at a relative humidity of at most 30%, an electrical resistance, measured as described in Research Disclosure June 1992, item 33840, of from 4×109 &OHgr;/sq. up to 5×1010 &OHgr;/sq. for the layer having the lowest resistance.

Abstract: A microfabrication technique, applications thereof, and mass-manufacturing techniques therefore, in which an analog mask is created and used to control exposure of a resist material to actinic radiation in order to create analog products at the microscale.

Abstract: An radiographic imaging system for making a radiograph by a radiography apparatus using a photographic combination of a silver halide photographic light sensitive material in combination with intensifying screens, the photographic material comprising a support having a light sensitive silver halide emulsion layer on each of both sides of the support, wherein the radiography apparatus conducts making a radiograph under the condition that a distance between a focal point of an X-ray tube and the photographic material is 0.9 to 3.0 m, a distance between the focal point of the X-ray tube and an object is 0.5 to 2.7 m and a distance between the object and the photographic combination is 0.3 to 1.5 m.

Abstract: A resist resin comprising a copolymer in which a (meth)acrylic structure having a side chain group decomposable with an acid and a polyorganosilsesquioxane structure represented by formula (1) are present in one molecule or a mixture of polymers in which these structures are each present in different molecules as well as a method of forming a pattern using the resist resin: wherein a reference character or numeral represents the same meaning as recited in the specification. The resist resin of the present invention has high sensitivity to a radiation having a short wavelength of 220 nm or less and is capable of forming a fine pattern of 0.15 &mgr;m or less.

Abstract: An EUV radiation source unit (10) for use in a lithographic projection apparatus to illuminate a mask pattern (22) which is to be projected on a substrate (W) comprises an electron source (12) and a medium in which the electrons of the source generate EUV Cherenkov radiation (PB). The wavelengths of the Cherenkov radiation and the multilayer structure of the mirrors (31-34) of the projection system (30) are adapted to each other, so that these mirrors show a maximum reflectivity. The medium forms part of the mask (MA) so that a mirror condenser system is no longer needed. In this way, an efficient transmission of radiation (PB) from the source to the substrate is obtained.

Abstract: A non-lithographic process for producing nanoscale features on a substrate is presented. The process involves applying to and reacting a first difunctional molecule with the surface of a substrate. A second difunctional molecule is applied and reacted with unreacted functional groups from the first difunctional molecule to form a patterned layer on the surface of a substrate. Selective application of the difunctional molecules is accomplished by using a nanoscale delivery device.

Abstract: A method of making molds for use in manufacturing high precision and high density multiple-lead microstructures. If employs microphoto etching process used in semiconductor manufacturing process to project X-ray and ultraviolet light on a photoresist layer through a X-ray co-mask and a generally used mask to produce exposing process. Through etching and electroplating processes, a plurality of identical punch molds may be made. The punch molds are aligned stacked up one upon the other until a desired height is reached. The stacked up punch molds are electroplated to form a lead punch die for producing microparts desired.

Abstract: A method for manufacturing a microstructured body, comprises irradiating a material with a pattern of X-rays; and dissolving selectively irradiated or non-irradiated regions of the material, where the material comprises a light-hardening and/or UV-hardening epoxy coating. The epoxy coatings need shorter irrdiation times than known plastics. The resulting microstructures can have high aspect ratios, and the developed structures can be produced with greater structure depths, free of defects and faults. Structural precision is in the submicron range.

Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Abstract: A printing method directed to a plurality of pieces of slip paper which have been bound into a book and to the outer surface, of which ink containing an initiator and either one of coloring matter and a precursor of coloring matter is applied are placed. A printing plate has a through portion through which radiation penetrates and whose shape corresponds to a pattern to be printed. The printing plate is placed ont he stacked slip paper and X-rays are irradiated upon the printing plate fro the above direction so as to print the pattern of a character on each pieces of the slip paper at a desired are thereof.

Abstract: A process for forming a photoresist image on a substrate and a process for forming metal contacts on a substrate are described. The process of forming a photoresist image includes depositing a positive working photoresist composition onto a metal layer which is on a substrate to thereby form a photoresist layer then imagewise exposing the photoresist layer to actinic radiation and developing said photoresist layer to form a plurality of cavities through the photoresist layer thereby revealing portions of the metal layer. Then the inventions provides for etching away the revealed portions of the metal layer followed by an overall exposing both the substrate and the remaining photoresist layer and remaining metal layer portions to sufficient electron beam radiation to render a part of the photoresist layer directly adjacent to the metal layer more soluble in a developer than the balance of the photoresist layer.

Abstract: A light-sensitive silver halide photographic emulsion has been described comprising a binder and tabular grains rich in silver bromide, characterized in that said grains contain as a dopant RhClx(SCN)y, wherein each of x and y are integers having a value of at least 1 and less than 6 so that x+y equals 6.

Abstract: A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and an amorphous silicon layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the amorphous silicon layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the amorphous silicon layer. The first etch step includes an etch chemistry that is selective to the amorphous silicon layer over the ultra-thin photoresist layer and the dielectric layer. The amorphous silicon layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

Abstract: A laminated substrate is prepared, the laminated substrate having two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light. A mask member with a pattern is disposed in tight contact with the surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not transmitting the synchrotron radiation light. The synchrotron radiation light is applied on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on the bottom of an etched area.

Abstract: A printing method directed to a plurality of pieces of slip paper which have been bound into a book and to the outer surface, of which ink containing an initiator and either one of coloring matter and a precursor of coloring matter is applied are placed. A printing plate has a through portion through which radiation penetrates and whose shape corresponds to a pattern to be printed. The printing plate is placed ont he stacked slip paper and X-rays are irradiated upon the printing plate fro the above direction so as to print the pattern of a character on each pieces of the slip paper at a desired are thereof.

Abstract: A process for forming a photoresist image on a substrate and a process for forming metal contacts on a substrate are described.

Abstract: A mammographic silver halide photosensitive material has at least one photosensitive emulsion layer on either one surface of a support. The emulsion layer is formed of a silver halide emulsion having an iodide content of less than 0.9 mol % based on silver. The photosensitive material exhibits a contrast of 3.7-4.8 as determined by processing the material by specific Developing Process (1). The photosensitive material is combined with a radiographic intensifying screen of Gd.sub.2 O.sub.2 S:Tb phosphor having a CTF of 0.40-1.00 at a spatial frequency of 5 lp/mm to construct a photographic combination.

Abstract: An object comprised of a curable material and formed by stereolithography or another three-dimensional prototyping method, in which the object has undergone initial curing, is subjected to post-curing by ionizing radiation, such as an electron beam having a predetermined beam output energy, which is applied in a predetermined dosage and at a predetermined dose rate. The post-cured object exhibits a property profile which is superior to that which existed prior to the ionizing radiation post-curing.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam a polymer having pendant recurring groups selected from the group consisting of--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.x --H wherein x is 0-20;--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.y --HE--(CH.sub.2).sub.z --H; and mixtures thereof; wherein HE is O or S; and each y and z individually is 1-18; and mixtures thereof; and then developing the polymer in an aqueous base developer. The developer can be any of the conventional or commonly used ones as well as the special developers discussed below.Positive lithographic patterns are also produced by imagewise exposing to actinic light, x-ray or e-beam a photosensitive polymeric material to provide free carboxylic acid groups; and then developing by contacting with an aqueous developer solution of about 0.

Abstract: A method is disclosed for the manufacture of microstructures and devices. The method is relatively easy to implement, and has the capability to produce features having a resolution of ten microns or smaller with a high aspect ratio (60, 75, 100, 200, or even higher). A master mask, appropriately designed and fabricated, is used in an initial exposure step with visible light, ultraviolet light, x-rays, an electron beam, or an ion beam to make a "transfer mask" directly on the surface of the sample. It is not necessary to produce an expensive x-ray master mask, even if x-ray exposure of the sample is desired. There is no necessity for gap control during exposure of the resist through the transfer mask. The resulting structures may, if desired, have a higher aspect ratio than microstructures that have previously been produced through other methods. The "transfer mask" is not a unit separate from the sample, but is formed directly on the surface of each sample.

Abstract: A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.

Abstract: A black-and-white silver halide photographic material is disclosed, said material comprising a support and on both sides thereof two light-sensitive emulsion layers and a protective antistress layer as an outermost layer, wherein per side of the support a total amount of silver, expressed as equivalent amount of silver nitrate of at least 5 g is coated, wherein the light-sensitive emulsion layer more close to the said outermost layer is provided with at least one spectrally sensitized silver halide emulsion having tabular emulsion crystals with {111} or {100} major faces, and wherein the emulsion layer more close to the said support is provided with at least one non-spectrally sensitized emulsion having essentially cubic silver halide emulsion crystals, characterized in that the said cubic emulsion crystals or the said tabular emulsion crystals or both have a halide composition including bromide.

Abstract: The present invention provides combining the advantages of hybrid resist with the unique properties of x-ray lithography to form high tolerance devices with x-ray pitch and to provide a means for varying the space width and fine tuning to account for process variations. Accordingly, a space width in the hybrid resist can be selectively printed by varying the mask-wafer gap distance, allowing more versatile structures to be formed and adjustments to be made for process changes such as resist composition and ion implant levels.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam a polymer having pendant recurring groups selected from the group consisting of--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.x --H wherein x is 0-20;--COO--CH.sub.2 --CH(OH)--(CH.sub.2).sub.y --HE--(CH.sub.2).sub.Z --H; and mixturesthereof; wherein HE is O or S; and each y and z individually is 1-18; and mixtures thereof; and then developing the polymer in an aqueous base developer. The developer can be any of the conventional or commonly used ones as well as the special developers discussed below.Positive lithographic patterns are also produced by imagewise exposing to actinic light, x-ray or e-beam a photosensitive polymeric material to provide free carboxylic acid groups; and then developing by contacting with an aqueous developer solution of about 0.

Abstract: Poly (diene sulfones) have superior properties as X-ray resists. Many poly (diene sulfones) have an X-ray sensitivity below about 50 mJ/cm.sup.2, and a glass transition temperature above about 70.degree. C. A preferred X-ray resist is poly (1,3-hexadiene sulfone). A method of synthesizing poly (diene sulfones) is disclosed, in which a diene monomer is dissolved in a molar excess of a nitroalkane at low temperature, for example in a molar excess of dried 2-nitropropane in a -78.degree. C. dry ice/acetone bath, and reacted with a molar excess of sulfur dioxide in the presence of a free radical initiator such as tert-butyl-hydroperoxide.

Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam copolymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkyl acrylate with alkylmethacrylate and/or alkylacrylate, and then developing the polymer in a developer.

Abstract: The present invention concerns a silver halide radiographic product intended for industrial radiography as well as a novel radiographic system and a method for forming the radiographic image.The present invention concerns a photographic product designed to be exposed to X or .gamma. radiation, which comprises a support covered on at least one face with a layer of silver halide emulsion which contains an efficient amount of at least one free spectral sensitizing dye.This product, intended for industrial radiography, exhibits improved contrast.

Abstract: A dual-coated radiographic element capable of producing a viewable image when heated following imagewise exposure is disclosed comprised of, on opposite sides of a transparent film, layer units containing radiation-sensitive radiation-sensitive silver halide grains, a light-insensitive source of silver, and a reducing agent for said light-insensitive reducible source of silver. Greater than 50 percent of total projected area of said silver halide grains being provided by tabular grains (a) having {100} major faces, (b) containing greater than 70 mole percent chloride, based on silver, (c) exhibiting an average thickness of less than 0.3 .mu.m, and (d) exhibiting an average equivalent circular diameter of greater than 0.6 .mu.m.

Abstract: A method for fabricating thick metal integrated transmission lines and circuit topologies for microwave integrated circuits. Microstrip or coplanar waveguide (CPW) transmission line and circuit topologies may be fabricated on semiconductor or dielectric substrates. For microstrip transmission line topologies, a metal ground plane is applied to the opposite side of the substrate from the thick metal transmission line conductor structures. To fabricate a thick metal transmission line topology, a metal plating base is applied to a substrate surface. A photoresist layer, which may include a preformed photoresist sheet, is then applied over the plating base layer. The photoresist layer is exposed to X-rays, such as from a synchrotron, through a mask having an X-ray absorber pattern that defines the desired transmission line or circuit topology. The photoresist layer is then developed to remove sections of the photoresist layer corresponding to the mask pattern and to expose portions of the plating base layer.

Abstract: There is provided a photostimulable phosphor according to formula (I):Ba.sub.1-x-y-p-3q-z Sr.sub.x M.sub.y.sup.2+ M.sub.2p.sup.1+ M.sub.2q.sup.3+ F.sub.2-a-b Br.sub.a I.sub.b :zEuwherein:M.sup.1+ is at least one alkali metal selected from the group consisting of Li, Na, K, Rb and Cs;M.sup.2+ is at least one metal selected from the group consisting of Ca Mg and Pb;M.sup.3+ is at least one metal selected from the group consisting of Al, Ga, In, Tl, Sb, Bi, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;0.ltoreq.x.ltoreq.0.30, 0.ltoreq.y.ltoreq.0.10, 0.ltoreq.p.ltoreq.0.3, 0.ltoreq.q.ltoreq.0.1, 0.05.ltoreq.a.ltoreq.0.76, 0.20.ltoreq.b.ltoreq.0.90, a+b<1.00 and 10.sup.-6 .ltoreq.z.ltoreq.0.2.

Abstract: A photolithographic system includes individually controllable radiation sources for forming an image pattern on an image plane without using a reticle or mask during fabrication of an integrated circuit device. The radiation sources are selectively activated as they scan the image plane. The image pattern can consist of parallel lines having identical widths and varying lengths, or alternatively, pixels having identical shapes and sizes. The radiation sources can be arranged as a linear array, or a staggered array, to achieve the desired linear density. Suitable radiation sources include light pipes, light emitting diodes, and laser diodes. Preferably, each of the activated radiation sources provides an exposure field of less than 0.1 microns on the image plane, and at least two of the radiation sources must be activated to provide the minimum line width of the image pattern.