Abstract: The present disclosure provides a thin film transistor, a method for fabricating the same, a display substrate, and a display apparatus, and belongs to the field of display technology. The method includes: forming a metal oxide semiconductor pattern comprising first and second metal oxide semiconductor layers, the second metal oxide semiconductor layer being above the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; etching the source-drain metal layer and the second metal oxide semiconductor layer to form source and drain electrodes and an active layer of the thin film transistor. The active layer is obtained after removing the second metal oxide semiconductor layer between the source and drain electrodes using a first etchant, and the first etchant has a higher etching rate on the second metal oxide semiconductor layer than on the first metal oxide semiconductor layer.

Abstract: An electronic device includes a semiconductor memory, wherein the semiconductor memory comprises a plurality of memory stacks neighboring each other in a first direction and a second direction, the second direction intersecting the first direction, a plurality of first liner layers covering sidewalls of memory stacks that neighbor each other in the second direction, the plurality of first liner layers extending in the second direction, a plurality of first air gaps located in spaces covered by the first liner layers, and a plurality of second air gaps located between each pair of memory stacks that neighbor each other in the first direction, the plurality of second air gaps extending in the second direction.

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

Abstract: A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.

Abstract: In a method for using a sputtering target, by making an ion collide with the sputtering target, a sputtered particle whose size is greater than or equal to 1/3000 and less than or equal to 1/20, preferably greater than or equal to 1/1000 and less than or equal to 1/30 of a crystal grain is generated.

Abstract: The present disclosure provides a TFT substrate and a manufacturing method thereof and a manufacturing method of an OLED panel. In the manufacturing method of the TFT substrate of the present disclosure, firstly formed a first inter layer dielectric covering the gate and the active layer on the buffer layer, wherein material of the first inter layer dielectric is provided as silicon oxynitride; Further, forming a second inter layer dielectric on the first inter layer dielectric, wherein material of the second inter layer dielectric is provided as silicon oxide, which can prevent excessive hydrogen elements from being introduced into the active layer, improve the working stability of the TFT device. The TFT substrate of the present disclosure is manufactured by using the above manufacturing method of a TFT substrate, the gate and the active layer have stable performance, and the TFT device has better working stability.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate on the substrate; a dielectric layer on the gate, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer formed by magnetron sputtering and in direct contact with the gate; a semiconductor layer on the dielectric layer, wherein the semiconductor layer includes nano-scaled semiconductor materials; and a source and a drain, wherein the source and the drain are on the dielectric layer, spaced apart from each other, and electrically connected to the semiconductor layer. The thin film transistor almost has no current hysteresis.

Abstract: The present application discloses an array substrate, a display panel and a display apparatus having the same, and a fabricating method thereof. The array substrate includes a base substrate; a first electrode and a second electrode, the first electrode and the second electrode being two different electrodes selected from a pixel electrode and a common electrode; and a thin film transistor including an active layer, an etch stop layer on a side of the active layer distal to the base substrate, a first node, and a second node.

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.

Abstract: The present disclosure provides in some embodiments an oxide TFT display substrate, a manufacture method thereof and a display device. The oxide TFT display substrate includes a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region. The method includes steps of: forming, after the formation of the oxide TFT, a SiON layer at least covering the first region; and forming a SiNx layer covering the second region.

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first opening, a second opening, and a third opening which are formed by performing first etching and second etching. By the first etching, the first insulator is etched for forming the first opening, the second opening, and the third opening. By the second etching, the first metal oxide, the second insulator, the third insulator, the fourth insulator, the second metal oxide, and the fifth insulator are etched for forming the first opening; the first metal oxide, the second insulator, and the third insulator are etched for forming the second opening; and the first metal oxide is etched for forming the third opening.

Abstract: A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

Abstract: A detector (10) that detects light (237) includes a sensor array (232) having a plurality of pixels (234). Each pixel (234) can include a first pixel layer (236A), and a second pixel layer (236B) stacked on top of the first pixel layer (236A). The first pixel layer (236A) can include a first, fast conductor electrode (238A) and a plurality of first quantum dots (240A) that absorb light (237) in a first range of wavelengths. The second pixel layer (236B) can include a second, fast conductor electrode (238B) and a plurality of second quantum dots (240B) that absorb light (237) in a second range of wavelengths. The second range of wavelengths is higher energy than the first range of wavelengths.

Abstract: Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel material is between the gate and the source region. The first channel material is spaced from the gate by one or more insulative materials. Second channel material is between the first channel material and the source region, and directly contacts the source region. The first and second channel materials are transition metal chalcogenide. One of the source and drain regions is a hole reservoir region and the other is an electron reservoir region. Tunnel dielectric material may be between the first and second channel materials.

Abstract: According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

Abstract: Disclosed are a thin film transistor and a method for manufacturing the same, which relates to the technical field of display. Each of a source and a drain of the thin film transistor includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer is in contact with an IGZO (indium gallium zinc oxide) layer, and a metal diffusion layer is provided at a contact face. Meanwhile, disclosed is a method for manufacturing the thin film transistor: sequentially obtaining the first metal layer, the second metal layer, and the third metal layer through deposition; then obtaining PV layers; and then performing high temperature annealing treatment on the PV layers to diffuse a metal within the first metal layer into the IGZO layer, thereby forming a metal diffusion layer. The metal diffusion layer forms Ohmic contact between the first metal layer and the IGZO layer, thus reducing contact resistance both between the source and the IGZO layer and between the drain and the IGZO layer.

Abstract: In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

Abstract: Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.

Abstract: The invention provides a BCE TFT substrate and manufacturing method thereof. The method comprises forming a first IGZO thin film with polycrystalline IGZO particles in a predetermined area of active layer before sputtering IGZO, the polycrystalline IGZO particles in the first IGZO thin film used as seed crystal during sputtering to grow a C-axis crystallized IGZO in good crystalline state to form a second IGZO thin film. The first and second IGZO thin films form an active layer. Because the surface of the active layer is presented as C-axis crystallized IGZO, the active layer is not damaged by the copper etchant during etching source and drain so as to ensure stable performance of active layer and to avoid the development of special copper etching solution. As such, the BCE TFT substrate has stable electrical performance. The BCE TFT substrate manufactured by the above manufacturing method has stable electrical performance.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

Abstract: Provided is a color filter array panel. The color filter array panel according to exemplary embodiments of the present invention includes: a substrate; a color filter disposed on the substrate and including a colorant including at least one of a pigment and a dye, and a solid fluorescent material; and a light source unit supplying light to the color filter, in which the solid fluorescent material is an aggregation induced emission enhancement (AIEE) material of which a liquid state is solidified to increase fluorescence efficiency.

Abstract: A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.

Abstract: An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

Abstract: A method for forming a mask pattern is provided, comprising forming a negative photoresist on a substrate; in an environment without oxygen, to performing a first exposure on the negative photoresist by use of a first ordinary mask plate, so that a fully-cured portion of the negative photoresist is exposed to light and a semi-cured portion and a removed portion of the negative photoresist are not exposed to light; in an environment with oxygen, performing a second exposure on the negative photoresist by use of a second ordinary mask plate, so that the semi-cured portion of the negative photoresist is exposed to light and the removed portion of the negative photoresist not exposed to light; removing the uncured negative photoresist and forming the mask pattern.

Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.

Abstract: Methods for fabricating a thin film transistor and an array substrate, an array substrate and a display device are provided, and the fabrication method of a thin film transistor includes: forming a first photoresist pattern on the active layer film, wherein the first photoresist pattern comprises a photoresist area of a first thickness and a photoresist area in a second thickness; etching the active layer film by using the first photoresist pattern as a mask to form an active layer; ashing the first photoresist pattern to remove the photoresist area of the second thickness and to reduce a thickness of the photoresist area of the first thickness to form the second photoresist pattern. The second photoresist pattern is used as the mask to etch the source-drain electrode thin film.

Abstract: According to one embodiment, a transistor includes: a gate electrode; a gate insulating layer provided on the gate electrode; an oxide semiconductor layer provided on the gate insulating layer; an oxygen supply layer provided on the oxide semiconductor layer; a first oxygen barrier layer provided on the oxygen supply layer; a source electrode provided to penetrate the oxygen supply layer and the first oxygen barrier layer and connected to the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode, provided to penetrate the oxygen supply layer and the first oxygen barrier layer, and connected to the oxide semiconductor layer.

Abstract: The manufacturing method of oxide thin film transistors (TFTs) includes: providing a substrate and forming an oxide semiconductor active layer on the substrate; depositing an insulation dielectric layer on the active layer; and applying an annealing process to components formed after the insulation dielectric layer is deposited. After depositing the gate insulation layer on the oxide semiconductor active layer, the annealing process is applied to the formed component, which eliminates the difference of the component performance caused by the insulation dielectric layer formed by different film formation processes such that the reproducibility of the film formation processes may be enhanced.

Abstract: A manufacturing method of a semiconductor device including a step of forming a silicon layer over a formation substrate, a step of forming a resin layer over the silicon layer, a step of forming a transistor over the resin layer, a step of forming a conductive layer over the silicon layer and the resin layer, and a step of separating the formation substrate and the transistor. The resin layer has an opening over the silicon layer. The conductive layer is in contact with the silicon layer through the opening in the resin layer. In the step of separating the formation substrate and the transistor, the silicon layer is irradiated with light, so that silicon contained in the silicon layer reacts with a metal contained in the conductive layer, and a metal silicide layer is formed.

Abstract: A device including a transparent or semitransparent substrate and at least one layered structure disposed on a first major surface of the substrate is described. The layered structure includes a first ITO layer on the substrate, a silicon dioxide layer on the first ITO layer opposite the substrate, and a second ITO layer on the silicon dioxide layer opposite the first ITO layer. The silicon dioxide layer includes an edge that is offset inwardly from an edge of the first ITO layer and from an edge of the second ITO layer. Methods of making the device are described.

Abstract: The disclosure provides a thin film transistor (TFT) and a fabrication method thereof, an array substrate and a fabrication method thereof, and a display apparatus. The fabrication method of a TFT includes: forming a protection layer in an area on an active layer between a source electrode and a drain electrode to be formed, forming a source-drain metal layer above the active layer having the protection layer formed thereon, coating a photoresist on the source-drain metal layer, and forming a photoresist reserved area corresponding to areas of the source electrode and the drain electrode to be formed and a photoresist non-reserved area corresponding to the other area; etching off the source-drain metal layer corresponding to the photoresist non-reserved area to form the source and drain electrodes and expose the protection layer above the active layer; and removing the photoresist above the source and drain electrodes and the protection layer.

Abstract: Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×1018 cm?3 or less and a carrier mobility of 10 cm?2V?1sec?1 or greater.

Abstract: A film-type semiconductor package includes a semiconductor integrated circuit and a dummy metal pattern. The semiconductor integrated circuit is formed on a film and includes an electrostatic discharge (ESD) protection circuit. The dummy metal pattern is formed on the film and is electrically connected to the ESD protection circuit through a first wiring formed on the film.

Abstract: Provided are a thin film transistor array substrate and a manufacture method thereof, comprising: providing a substrate, and the substrate comprises a first surface and a second surface, which are oppositely located; forming a gate on the first surface; forming a first insulative layer, which covers on the gate; forming a metal oxide semiconductor layer on the first insulative layer; implementing ion implantation to two end regions of the metal oxide semiconductor layer, and the two end regions after the ion implantation respectively are a source and a drain, and a region without the ion implantation is an active layer; forming a second insulative layer, which covers the source, the drain and the active layer; opening a via exposing the source or the drain in the second insulative layer; forming a pixel electrode on the second insulative layer, and connected with the source or the drain through the via.

Abstract: A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.

Abstract: A technique is described depositing a new formula of indium and tin salt solutions as a precursor to form a solid transparent indium tin oxide (ITO) film on non-conductive solid substrates. The utilization of this new composition of matter prompted the discovery of a method for preparing the first top-to-bottom completely solution processed solar cell. The specific patterning of the liquid-processed ITO precursor solution and the subsequent layers of a solar cell outlined here also demonstrate a unique way to connect solution processed (as opposed to deposited using vacuum techniques) solar cells in series and in parallel. Also disclosed are related methods for zinc tin oxide (ZTO), indium oxide (IO), indium zinc oxide (IZO), cadmium tin oxide (CTO), aluminum zinc oxide (AZO), and zinc oxide (ZO).

Abstract: A method of fabricating an array substrate including forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a gate electrode corresponding to a central portion of the oxide semiconductor layer; forming source and drain areas having conductive properties in the oxide semiconductor layer by irradiating X-rays or UV rays to the oxide semiconductor layer exposed outside the gate electrode; forming an inter insulating layer on the gate electrode and having first contact holes that expose the source and drain areas; and forming source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first contact holes, respectively.

Abstract: A display device, includes a substrate; first to fourth subpixels sequentially arranged on the substrate; a first power line on a left side of the first subpixel and shared by the first and second subpixels; a sensing line between the second subpixel and the third subpixel and shared by the first to fourth subpixels; a second power line on a right side of the fourth subpixel and shared by the third and fourth subpixels; and a first data line on the left side of the first subpixel, a second data line on a right side of the second subpixel, a third data line on a left side of the third subpixel, and a fourth data line on the right side of the fourth subpixel. The first and second power lines and the sensing line are disposed on a layer different from the first to fourth data lines.

Abstract: A technique is described depositing a new formula of indium and tin salt solutions as a precursor to form a solid transparent indium tin oxide (ITO) film on non-conductive solid substrates. The utilization of this new composition of matter prompted the discovery of a method for preparing the first top-to-bottom completely solution processed solar cell. The specific patterning of the liquid-processed ITO precursor solution and the subsequent layers of a solar cell outlined here also demonstrate a unique way to connect solution processed (as opposed to deposited using vacuum techniques) solar cells in series and in parallel. Also contemplated are similar compositions capable of forming zinc tin oxide (ZTO), indium oxide (IO), indium zinc oxide (IZO), cadmium tin oxide (CTO), aluminum zinc oxide (AZO), or zinc oxide (ZO).

Abstract: A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.

Abstract: Provided is a semiconductor device having favorable reliability.

Abstract: A semiconductor element having high mobility, which includes an oxide semiconductor layer having crystallinity, is provided. The oxide semiconductor layer includes a stacked-layer structure of a first oxide semiconductor film and a second oxide semiconductor film having a wider band gap than the first oxide semiconductor film, which is in contact with the first oxide semiconductor film. Thus, a channel region is formed in part of the first oxide semiconductor film (that is, in an oxide semiconductor film having a smaller band gap) which is in the vicinity of an interface with the second oxide semiconductor film. Further, dangling bonds in the first oxide semiconductor film and the second oxide semiconductor film are bonded to each other at the interface therebetween. Accordingly, a decrease in mobility resulting from an electron trap or the like due to dangling bonds can be reduced in the channel region.

Abstract: A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Abstract: A method and structure for integrating gallium nitride into a semiconductor substrate. The method may also include means for isolating the gallium nitride from the semiconductor substrate.

Abstract: A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The etching stopping layer is formed on a surface of the channel layer. The channel layer and the etching stopping layer are formed in a same photo etching process.