Abstract: A semiconductor package structure includes a substrate comprising a land structure. The land structure includes a first land section having a first height in a cross-sectional view and a second land section having a second height in the cross-sectional view that is different than the first height. A mold encapsulant is disposed adjacent a lateral portion of the first land section and is disposed below a bottom portion of the second land section. A semiconductor die is attached to the substrate, and includes a first major surface, a second major surface opposing the first major surface, and an outer perimeter. The semiconductor die further includes a bonding structure disposed adjacent the first major surface, which is coupled to the second land section such that the first land section is disposed outside the perimeter of the semiconductor die A mold member encapsulates at least portions of the semiconductor die.

Abstract: The present disclosure relates to a molded radiofrequency, ‘RF’, power package. The present disclosure further relates to a method for manufacturing such package. According to example embodiments, weakening structures are provided in the leads to allow the leads to be bent without causing delamination in the body of solidified molding compound.

Abstract: A semiconductor package includes an interposer having a separation layer on a rear surface of which a plurality of first recesses is arranged. A plurality of wiring structures is stacked on the separation layer alternately with a plurality of insulation interlayers. A plurality of semiconductor devices is arranged, side by side, on the interposer side and connected to a plurality of the wiring structures. A plurality of contact terminals on the rear surface of the separation layer is connected to the plurality of the wiring structures through the separation layer. A flatness deterioration of the interposer is minimized and the contact surface between the interposer and under fill resin is enlarged.

Abstract: A method of manufacturing an electronic apparatus includes the steps of: providing an electronic panel defining a through hole; providing an electronic module having at least a portion thereof received in the through hole; providing a protective member having a first surface adjacent to the electronic panel, a hole area overlapping the through hole, a peripheral area surrounding the hole area, and a second surface facing the first surface and spaced apart from the electronic module, the providing of the protective member including: providing an unfinished protective member; attaching a film to the peripheral area; and forming a generally concave-convex pattern by contacting an acid solution with the hole area.

Abstract: A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.

Abstract: A semiconductor structure includes an encapsulated die including an electronic die and an insulating layer laterally covering the electronic die, and a photonic die coupled to the encapsulated die. The photonic die includes an optical device in proximity to an edge coupling facet of a portion of a sidewall of the photonic die, wherein a surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the insulating layer or a surface roughness of another portion of the sidewall of the photonic die.

Abstract: A method includes attaching semiconductor die to a carrier between copper pillars, covering with molding, backside grinding to expose first ends of the pillars and backside drain contacts of the die, and applying a layer of conductive material to electrically connect the first ends of the pillars and the backside drain contacts. The method further includes cutting grooves in the conductive material to isolate adjacent die, removing the carrier to expose second ends of the copper pillars in place in the molding, applying another layer of conductive material to electrically connect the second ends of the copper pillars and source contacts of adjacent die, singulating individual MCM packages each including a first die and a second die with a source of the first die connected to a drain of the second die via one of the copper pillars left in place in the molding.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure for optically coupling a fiber includes a photonic die, an electronic die disposed on and electrically coupled to the photonic die, and an insulating layer disposed on the photonic die and extending along sidewalls of the electronic die. The photonic die includes a first portion and a second portion connected to the first portion, an optical device of the photonic die optically coupled to the fiber is within the first portion, and the second portion extends beyond lateral extents of the first portion.

Abstract: A semiconductor device includes a semiconductor chip, a plurality of leads that each includes a lead body portion which has amounting portion which includes an upper surface whereon a semiconductor chip is bonded, and a lead connecting portion for external connection which projects downward from a lower surface of the lead body portion, a first sealing resin that seals a space that is defined by each lead body portion and each lead connecting portion of the plurality of leads in a region below the upper surface of each lead body portion of the plurality of leads, and a second sealing resin that seals the semiconductor chip in a region above the upper surface of each lead body portion of the plurality of leads.

Abstract: A stacked die structure includes a base die, a top die and conductive terminals electrically connected to the top die. The base die includes a base semiconductor substrate, a base interconnection layer disposed on the base semiconductor substrate, and a base bonding layer disposed on the base interconnection layer. The top die is stacked on the base die and electrically connected to the base die, wherein the top die includes a top bonding layer, a top semiconductor substrate, a top interconnection layer, top conductive pads and top grounding vias. The top bonding layer is hybrid bonded to the base bonding layer. The top interconnection layer is disposed on the top semiconductor substrate and includes a dielectric layer, conductive layers embedded in the dielectric layer, and conductive vias joining the conductive layers. The conductive pads and top grounding vias are embedded in the dielectric layer and disposed on the conductive layers.

Abstract: A method of making a microelectronic package includes bonding a conductive structure to a carrier. The conductive structure can include a base and a plurality of interconnections extending continuously away from the base toward the carrier. The microelectronic element can be positioned between at least two adjacent interconnections of the plurality of interconnections. The conductive structure may be bonded to the carrier so that the conductive structure overlies a rear surface of a microelectronic element disposed on the carrier and an exposed top surface of the carrier. The plurality of interconnections and the microelectronic element may be encapsulated. The carrier may be removed to expose free ends of the interconnections and bond pads of the microelectronic element. The free ends of the interconnections and bond pads of the microelectronic element may be conductively connected with terminals of the microelectronic package. The conductive structure may be patterned to form external contacts.

Abstract: A method of obtaining contact resistance values of a semiconductor package, the semiconductor package includes a package substrate, a semiconductor chip mounted on the package substrate, a molding member disposed on the package substrate to surround the semiconductor chip, and an electromagnetic interference (EMI) shielding layer disposed on side surfaces of the package substrate and on the molding member. The package substrate includes a substrate body having a first surface and a second surface which are opposite to each other, first to fourth upper interconnection patterns disposed on the first surface of the substrate body in a first region of the package substrate and in contact with the EMI shielding layer, and an interconnection structure disposed in a second region of the package substrate.

Abstract: A semiconductor device, includes: a first semiconductor chip including a first semiconductor substrate; and a second semiconductor chip including a second semiconductor substrate, wherein the first semiconductor substrate has a first substrate main surface and a first substrate back surface facing opposite directions in a first direction, and includes a first region and a second region disposed on the first substrate main surface, wherein the first semiconductor chip includes: a first MOSFET of a first type structure formed to include the first region; and a control circuit formed to include the second region, wherein the second semiconductor chip includes a second MOSFET of a second type structure formed to include the second semiconductor substrate, and wherein the second type structure is different from the first type structure.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A Chip-on-Board (COB) display module is provided, which includes a Printed Circuit Board (PCB) a plurality of Light-Emitting Diode (LED) luminous units, a packaging adhesive layer and a light shielding layer wherein the plurality of LED luminous units are mounted and fixed on the PCB, the packaging adhesive layer covers the PCB and wraps the LED luminous units thereon, a liquid passage is provided in the packaging adhesive layer between every two adjacent LED luminous units, and the light shielding layer fills the liquid passage. The COB display module further includes a reflecting layer, and the reflecting layer covers two sidewalls of the liquid passage, and is positioned between the packaging adhesive layer and the light shielding layer. A manufacturing method for the COB display module is also disclosed.

Abstract: A vacuum system for film lamination, including a vacuum chamber module, a film-pressing module, a substrate susceptor module and a hot-plate heating module, is disclosed, wherein the film-pressing module includes a film-pressing platen, and the substrate susceptor module includes a substrate susceptor supported by a spring-loaded mechanism. During a film-lamination process, the film-pressing platen is actuated to move downwards to attach a laminating film onto a substrate, and the substrate susceptor is actuated to move downwards and finally rest on the hot-plate heating module. Therefore an adhesive glue disposed between the laminating film and the substrate can be thermally cured. After completing the film-lamination process, the film-pressing platen is actuated upwards so that the substrate susceptor also is actuated to move upwards to its initial position by a restoring force exerted by the spring-loaded mechanism.

Abstract: A method for forming a wafer level chip scale package begins with providing an integrated circuit wafer. Applying a dielectric material to the surface of the integrated circuit wafer. A redistribution conductive layer is formed upon the dielectric material to make contact with the input/output contacts of the integrated circuit. A polymer-based film is applied to the surface of the integrated circuit wafer and is subjected to a compression molding process. Alignment marks are placed on the edge of the integrated circuit wafer. A laser ablation process is implemented to prepare through mold via (TMV) in the cured thermoset plastic material. The solder ball or copper pillar input/output connector is placed in the through mold via (TMV). A reflow process is instigated to connect the input/output connector to the redistribution conductive layer's pad surface.

Abstract: A power semiconductor device having a high degree of reliability even when an operable temperature of a power semiconductor element is sufficiently increased. The power semiconductor device includes: a power semiconductor element including an electrode formed on a first surface; a first stress mitigation portion connected to the electrode with a first bonding portion being interposed; and a wiring portion electrically connected to the first stress mitigation portion with a second bonding portion being interposed. A bonding strength of the first bonding portion is higher than a bonding strength of the second bonding portion.

Abstract: A semiconductor device that has at least one semiconductor chip attached to a leadframe made of sheet metal of unencumbered full thickness. The leadframe has leads of a first subset that alternate with leads of a second subset. The leads of the first and second subsets have elongated straight lead portions that are parallel to each other in a planar array. A cover layer of insulating material is located over portions of un-encapsulated lead surfaces. The portions of the leads of the first and second subsets that don't have the cover layer have a metallurgical configuration that creates an affinity for solder wetting.

Abstract: A semiconductor device has a temporary layer, such as a dam material or adhesive layer, formed over a carrier. A plurality of recesses is formed in the temporary layer. A first semiconductor die is mounted within the recesses of the temporary layer. An encapsulant is deposited over the first semiconductor die and temporary layer. The encapsulant extends into the recesses in the temporary layer. The carrier and temporary layer are removed to form recessed interconnect areas around the first semiconductor die. Alternatively, the recessed interconnect areas can be formed the carrier or encapsulant. Multiple steps can be formed in the recesses of the temporary layer. A conductive layer is formed over the first semiconductor die and encapsulant and into the recessed interconnect areas. A second semiconductor die can be mounted on the first semiconductor die. The semiconductor device can be integrated into PiP and Fi-PoP arrangements.

Abstract: Semiconductor device modules may include a redistribution layer and a first semiconductor die. A second semiconductor die may be located on the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on a second active surface of the second semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may be located over the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die.

Abstract: A method for processing a 3D semiconductor device, the method including: providing a wafer including a plurality of first dies, the plurality of first dies including a first transistor layer and a first interconnection layer; completing a step of transferring a plurality of second dies each overlaying at least one of the first dies, where each of the plurality of second dies includes a second transistor layer, where at least one of the plurality of first dies is substantially larger in area than at least one of the plurality of second dies, and where each of the plurality of second dies has a thickness greater than six microns; and completing a step of thinning the plurality of second dies, where each of the plurality of second dies has a thickness of less than 2 microns.

Abstract: A position measuring device includes a measuring standard and a scanning unit, which are arranged in a manner that allows them to move relative to each other in a measuring direction. The measuring standard includes a graduation, which is scannable by the scanning unit in order to generate positional signals. The scanning unit includes an illumination unit and a detector unit for generating positional signals, the illumination unit being able to emit light in the direction of the graduation and the detector unit being able to detect light modulated by the graduation. The detector unit includes a circuit board and a sensor unit, which is arranged as a semiconductor chip. At least two photodetectors are provided on a front side of the sensor unit facing the graduation, and the electrical connections of the sensor unit are routed to contact surfaces on its rear side by metallic vias. The sensor unit is connected via the contact surfaces to corresponding contact surfaces on the circuit board.

Abstract: A leadframe includes a plurality of interconnected support members. A pair of die pads is connected to the support members and configured to receive a pair of dies electrically connected by at least one wire. A support bracket extends between the die pads and includes a surface for maintaining the at least one wire at a predetermined distance from the die pads during overmolding of the leadframe.

Abstract: A method for manufacturing semiconductor devices is provided. The method includes bonding a semiconductor element to a first surface of a planar lead frame, clamping a partial area of the lead frame to hold the lead frame and the semiconductor element in molding dies, and covering at least a part of the lead frame and the semiconductor element with a resin member by resin molding which fills the molding dies with resin. A thin-walled portion having a relative small thickness is previously formed on a shortest virtual line connecting a clamp area of the lead frame to an area where the semiconductor element is bonded.

Abstract: A hydraulic interface includes a first portion for channeling a liquid and a heating means supplied electrically. The heating means is fastened to the exterior face of the first portion, the hydraulic interface is configured to be installed between a liquid supply tube lying alongside an arm of a device for wiping a window of a vehicle, and the connector of the device for wiping a window of a vehicle is an intermediate component that fixes a wiping brush onto the arm.

Abstract: A method of manufacture of an integrated circuit packaging system includes providing an integrated circuit having an active side and a non-active side; forming an indent, having a flange and an indent side, from a peripheral region of the active side; and forming a conformal interconnect, having an elevated segment, a slope segment, and a flange segment, over the indent.

Abstract: A semiconductor device manufacturing method which enhances the reliability of a semiconductor device. The method includes a step in which a source wire is connected with a semiconductor chip while jigs are pressed against a die pad. The jigs each have a first support portion with a first projection and a second support portion with a second projection. Using the jigs thus structured, the first projection is made to contact with a first point on the front surface of the die pad and then the second projection is made to contact with a second point on the front surface of the die pad located closer to a suspension lead than the first point.

Abstract: There are provided a package board, a method for manufacturing the same, and a package on package having the same. The package board according to an exemplary embodiment of the present disclosure includes a first insulating layer formed with a cavity having a penetrating shape; and a first connection pad formed to penetrate through the first insulating layer and formed at one side of the cavity.

Abstract: A light-emitting element includes: a semiconductor light-emitting stack including a first semiconductor layer with a first conductivity, an active layer, and a second semiconductor layer with a second conductivity; a first conductive layer disposed on the semiconductor light-emitting stack and electrically connecting the second semiconductor layer; a first insulating layer on the first conductive layer; a second conductive layer disposed on the first insulating layer and electrically connecting the first semiconductor layer; a second insulating layer on the second conductive layer; a first pad and a second pad on the second conductive layer; and a cushion part disposed between the first pad and the second pad.

Abstract: To improve the reliability in applying a tape to the rear surface of a substrate while securing the heat resistance of the tape applied to the rear surface of the substrate. There is a gap between a bottom surface of a ditch provided in a support member and an upper surface of a driver IC chip. On the other hand, the upper surface side of a lead frame is supported by the support member so that the bottom surface of the ditch contacts the upper surface of a Low-MOS clip mounted over a Low-MOS chip. Thus, even in a state where the driver IC chip and the Low-MOS chip are mounted on the upper surface side of the lead frame, the tape can be reliably applied to the rear surface of the lead frame (in particular, to the rear surface of the product region).

Abstract: Fan-out wafer-level packaging (WLP) using metal foil lamination is provided. An example wafer-level package incorporates a metal foil, such as copper (Cu), to relocate bonding pads in lieu of a conventional deposited or plated RDL. A polymer such as an epoxy layer adheres the metal foil to the package creating conductive contacts between the metal foil and metal pillars of a die. The metal foil may be patterned at different stages of a fabrication process. An example wafer-level package with metal foil provides relatively inexpensive electroplating-free traces that replace expensive RDL processes. Example techniques can reduce interfacial stress at fan-out areas to enhance package reliability, and enable smaller chips to be used. The metal foil provides improved fidelity of high frequency signals. The metal foil can be bonded to metallic pillar bumps before molding, resulting in less impact on the mold material.

Abstract: A semiconductor package and a method for making the same are provided. In the method, a clip is used to conduct a lead frame and at least one chip. The clip has at least one second connection segment, at least one third connection segment, and at least one intermediate connection segment. The second connection segment is electrically connected to a second conduction region of the chip and a second pin of the lead frame respectively, and the third connection segment is electrically connected to a third conduction region of the chip and a third pin of the lead frame respectively. The intermediate connection segment connects the at least one second connection segment and the at least one third connection segment, and is removed in a subsequent process. Thereby, the present invention does not need to use any gold wire, which effectively saves the material cost and the processing time.

Abstract: A manufacturing method of a semiconductor device is provided. First, a mould is provided. The mould has a chamber, patterns in the chamber, and protrusions in the chamber. A carrier substrate having at least one die located thereon is disposed in the chamber, and the protrusions surround the die. A thermosetting material is injected into the chamber and is cured. The cured thermosetting material is separated from the mould, so as to form an interposer substrate. A plurality of through holes corresponding to the protrusions and a plurality of grooves corresponding to the patterns are formed on the interposer substrate. A conductive material is filled into the through holes and the grooves to form a plurality of conductive pillars and a first conductive pattern layer on a first surface of the interposer substrate. The first conductive pattern layer is electrically connected with the conductive pillars.

Abstract: A transfer-bonding method for light emitting devices including following steps is provided. A plurality of light emitting devices is formed over a first substrate and is arranged in array, wherein each of the light emitting devices includes a device layer and an interlayer sandwiched between the device layer and the first substrate. A protective layer is formed over the first substrate to selectively cover parts of the light emitting devices, and other parts of the light emitting devices are uncovered by the protective layer. The device layers uncovered by the protective layer are bonded with a second substrate. The interlayers uncovered by the protective layer are removed, so that parts of the device layers uncovered by the protective layer are separated from the first substrate and are transfer-bonded to the second substrate.

Abstract: In QFN packages for vehicles which are required to have high reliability, the side surface of leads is mostly covered with lead-to-lead resin protrusions, which prevent smooth formation of solder fillets during reflow mounting. When the lead-to-lead protrusions are mechanically removed using a punching die, there is a high possibility of causing cracks of the main body of the package or terminal deformation. When a spacing is provided between the punching die and the main body of the package in order to avoid such damages, a resin residue is produced to hinder complete removal of this lead-to-lead resin protrusion. The present invention provides a method for manufacturing semiconductor device of a QFN type package using multiple leadframes having a dam bar for tying external end portions of a plurality of leads.

Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. One such method includes forming a plurality of apertures in a substrate with the apertures arranged in an array, and, after forming the apertures, attaching the substrate to a lead frame having a plurality of pads with the apertures in the substrate aligned with corresponding pads in the lead frame. Another method includes providing a partially cured substrate, coupling the partially cured substrate to a plurality of leads, attaching a microelectronic die to the leads, and electrically connecting the microelectronic die to the leads.

Abstract: A wafer-level package for semiconductor devices and a method for making the package. At least one dielectric layer is selectively printed on at least a portion of the semiconductor devices creating first recesses aligned with a plurality of electrical terminals on the semiconductor devices. A conductive material is printed in the first recesses to form contact members on the semiconductor devices. At least one dielectric layer is selectively printed to create a plurality of second recesses corresponding to a target circuit geometry. A conductive material is printed in at least a portion of the second recesses to create a circuit geometry. The circuit geometry includes a plurality of exposed terminals adapted to electrically couple to another circuit member. The wafer is diced to provide a plurality of discrete packaged semiconductor devices.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching an integrated circuit to the substrate; attaching a vertical interconnect over the substrate; forming an encapsulation on the substrate and covering the vertical interconnect; and forming a rounded cavity, having a curved side, in the encapsulation with the vertical interconnect exposed in the rounded cavity.

Abstract: A process for forming land grid array semiconductor packages includes a leadframe that is supported by a substrate comprising mold compound. In some embodiments, at least one die is electrically coupled to the leadframe by bondwires. The package comprises a second mold compound to act as an encapsulant. An apparatus for forming a land grid array semiconductor package includes means for molding a leadframe, assembling thereon at least one semiconductor device, applying a second mold, and singulating to form individual devices. A land grid array package comprises a leadframe, a substrate for supporting the leadframe, at least one semiconductor device and a mold compound.

Abstract: Embodiments of the present disclosure relate to a leadless surface mount assembly package, an electronic device, and a method for forming a surface mount assembly package, which package comprising: a first lead; a second lead; a chip fixed on an upper surface of the first lead; a clip coupled to the second lead, a lower surface of the clip being fixed to an upper surface of the chip. The surface mount assembly package further comprises a molding compound for molding the first lead, the second lead, the chip, and the clip, wherein ends of the first lead and the second lead are only exposed from the molding compound, without outward extending from the molding compound. By using the embodiments of the present disclosure, costs can be saved and processing flow can be simplified, and a new-model leadless surface mount assembly package is obtained.

Abstract: A resin-encapsulated semiconductor device is manufactured by mounting semiconductor elements on respective die pad portions of a frame. Electrodes on the surface of the semiconductor elements are wire bonded to lead portions of the frame. The die pad portions, semiconductor elements and lead portions are encapsulated with resin, leaving a bottom surface part of the lead portions exposed. The lead portions are partially cut by a rotary blade from an upper side of the resin to form concave parts in the lead portions, which are wet-etched to form exposed lead upper end parts. A plated layer is formed on the lead upper end parts and the lead bottom surface parts. The remaining parts of the lead portions with the plated layer are cut to separate the resin-encapsulated semiconductor device into individual pieces.

Abstract: A light emitting device package is provided that comprises first and second light emitting devices including light emitting diodes, a body a body having a first cavity in which the first light emitting device is positioned and a second cavity in which the second light emitting device is positioned and a resin material formed in the cavity, wherein the resin material includes, a first resin material formed in the first cavity, a second resin material formed in the second cavity, and a third resin material formed an upper surface of the first and second resin materials, wherein at least one of the first resin material and the second resin material includes a light diffusing material.

Abstract: A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the molded package, such as on top of a device die mounted on the package substrate or a lead frame. In order to overcome cavity wall angular limitations introduced by conformability issues associated with film-assisted molding, a gel reservoir feature is formed so that gel used to protect components in the cavity does not come in contact with a lid covering the cavity or the junction between the lid and the package attachment region. The gel reservoir is used in conjunction with a formed level setting feature that controls the height of gel in the cavity. Benefits include decreased volume of the cavity, thereby decreasing an amount of gel-fill needed and thus reducing production cost of the package.

Abstract: A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming fine irregularities on a bond surface formed in the removal step, and a bonding step of bonding a wavelength conversion member to the bond surface.

Abstract: To improve the reliability in applying a tape to the rear surface of a substrate while securing the heat resistance of the tape applied to the rear surface of the substrate. There is a gap between a bottom surface of a ditch provided in a support member and an upper surface of a driver IC chip. On the other hand, the upper surface side of a lead frame is supported by the support member so that the bottom surface of the ditch contacts the upper surface of a Low-MOS clip mounted over a Low-MOS chip. Thus, even in a state where the driver IC chip and the Low-MOS chip are mounted on the upper surface side of the lead frame, the tape can be reliably applied to the rear surface of the lead frame (in particular, to the rear surface of the product region).

Abstract: A semiconductor device package (100) includes a heat spreader (503) formed by depositing a first thin film layer (301) of a first metal on a top surface (150) of a die (110) and to exposed portions of a top surface of an encapsulant (208), depositing a second thin film layer (402) of a second metal on a top surface of the first thin film layer, and depositing a third layer (503) of a third metal on a top surface of the second thin film layer.

Abstract: A method of manufacturing a semiconductor device includes mounting at least one of a first semiconductor chip and a second semiconductor chip over a die pad of a leadframe, and inspecting a mounting position of at least one of the first semiconductor chip and the second semiconductor chip, wherein the leadframe includes first mark formed to the die pad, for indicating a first mounting region for the first semiconductor chip, and second mark formed to the die pad, for indicating a second mounting region for the second semiconductor chip, the first mark is different from the second mark, in at least either one of size and geometry, wherein, in the inspecting a mounting position of at least one of the first semiconductor chip and the second semiconductor chip, a mounting position of the first semiconductor chip is inspected when the first semiconductor chip is mounted.

Abstract: Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method comprises encapsulating a first semiconductor die having one or more core redistribution layers formed thereover in an outer molded body. The outer molded body has a portion, which circumscribes the core redistribution layer. One or more topside redistribution layers are produced over the core redistribution layer. A contact array is formed over the topside redistribution layer and electrically coupled to the first semiconductor die encapsulated in the outer molded body through the topside redistribution layers and the core redistribution layers.