Plural Gate Electrodes (e.g., Dual Gate, Etc.) Patents (Class 438/283)
  • Patent number: 11984483
    Abstract: In a method of manufacturing a semiconductor device, a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed, a sacrificial gate structure is formed over the fin structure, a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched thereby forming a source/drain space, a stressor layer is formed in the source/drain space, a metal gate structure including part of the second semiconductor layer as channel regions is formed by a gate replacement process, after the metal gate structure is formed, the stressor layer is at least partially removed, and a source/drain contact comprising metal or a metallic material is formed in the source/drain space from which the stressor layer is at least partially removed.
    Type: Grant
    Filed: July 6, 2021
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Sheng-Jier Yang
  • Patent number: 11942516
    Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: March 26, 2024
    Assignee: Intel Corporation
    Inventors: Nicole K. Thomas, Ravi Pillarisetty, Kanwaljit Singh, Hubert C. George, David J. Michalak, Lester Lampert, Zachary R. Yoscovits, Roman Caudillo, Jeanette M. Roberts, James S. Clarke
  • Patent number: 11942376
    Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun Hsiung Tsai, Cheng-Yi Peng, Ching-Hua Lee, Chung-Cheng Wu, Clement Hsingjen Wann
  • Patent number: 11929419
    Abstract: A device includes a semiconductive fin having source and drain regions and a channel region between the source and drain regions, a gate feature over the channel region of the semiconductive fin, a first spacer around the gate feature, source and drain features respectively in the source and drain regions of the semiconductive fin, an interlayer dielectric layer around the first spacer, and a void between the first spacer and the interlayer dielectric layer and spaced apart from the gate feature and the source and drain features.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chang-Yin Chen, Che-Cheng Chang, Chih-Han Lin
  • Patent number: 11923440
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Chen-Ping Chen, Kuei-Yu Kao, Hsiao Wen Lee, Chih-Han Lin
  • Patent number: 11923435
    Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: March 5, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hsin-Han Wu, Kai-Kuen Chang, Ping-Hung Chiang
  • Patent number: 11894372
    Abstract: A device is disclosed. The device includes a first semiconductor fin, a first source-drain epitaxial region adjacent a first portion of the first semiconductor fin, a second source-drain epitaxial region adjacent a second portion of the first semiconductor fin, a first gate conductor above the first semiconductor fin, a gate spacer covering the sides of the gate conductor, a second semiconductor fin below the first semiconductor fin, a second gate conductor on a first side of the second semiconductor fin and a third gate conductor on a second side of the second semiconductor fin, a third source-drain epitaxial region adjacent a first portion of the second semiconductor fin, and a fourth source-drain epitaxial region adjacent a second portion of the second semiconductor fin. The device also includes a dielectric isolation structure below the first semiconductor fin and above the second semiconductor fin that separates the first semiconductor fin and the second semiconductor fin.
    Type: Grant
    Filed: January 11, 2023
    Date of Patent: February 6, 2024
    Assignee: Intel Corporation
    Inventors: Willy Rachmady, Cheng-Ying Huang, Gilbert Dewey, Aaron Lilak, Patrick Morrow, Anh Phan, Ehren Mannebach, Jack T. Kavalieros
  • Patent number: 11876019
    Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: January 16, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Min Kim, Sunhom Steve Paak, Heon-Jong Shin, Dong-Ho Cha
  • Patent number: 11869891
    Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: January 9, 2024
    Assignee: Intel Corporation
    Inventors: Jun Sung Kang, Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, William Hsu, Dax M. Crum, Tahir Ghani, Bruce Beattie
  • Patent number: 11855084
    Abstract: Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. The gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. In some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.
    Type: Grant
    Filed: July 1, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Cheng Ching, Huan-Chieh Su, Zhi-Chang Lin, Chih-Hao Wang
  • Patent number: 11842932
    Abstract: A method includes providing a substrate having a channel region, forming a gate stack layer over the channel region, forming a patterned hard mask over the gate stack layer, etching a top portion of the gate stack layer through openings in the patterned hard mask with a first etchant, etching a middle portion and a bottom portion of the gate stack layer with a second etchant that includes a passivating gas. A gate stack is formed with a passivation layer deposited on sidewalls of the gate stack. The method also includes etching the gate stack with a third etchant, thereby removing a bottom portion of the passivation layer and recessing a bottom portion of the gate stack.
    Type: Grant
    Filed: May 9, 2022
    Date of Patent: December 12, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chang-Yin Chen, Che-Cheng Chang, Chih-Han Lin
  • Patent number: 11830931
    Abstract: The present disclosure describes a method for forming gate spacer structures with air-gaps to reduce the parasitic capacitance between the transistor's gate structures and the source/drain contacts. In some embodiments, the method includes forming a gate structure on a substrate and a spacer stack on sidewall surfaces of the gate structure where the spacer stack comprises an inner spacer layer in contact with the gate structure, a sacrificial spacer layer on the inner spacer layer, and an outer spacer layer on the sacrificial spacer layer. The method further includes removing the sacrificial spacer layer to form an opening between the inner and outer spacer layers, depositing a polymer material on top surfaces of the inner and outer spacer layers, etching top sidewall surfaces of the inner and outer spacer layers to form a tapered top portion, and depositing a seal material.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: November 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Chansyun David Yang
  • Patent number: 11810855
    Abstract: An electronic component includes a lower insulating layer, an upper insulating layer formed on the lower insulating layer, a first via electrode embedded in the lower insulating layer, a second via electrode embedded in the lower insulating layer at an interval from the first via electrode, and a resistance layer that is made of a metal thin film, is interposed in a region between the lower insulating layer and the upper insulating layer, and is electrically connected to the first via electrode and the second via electrode.
    Type: Grant
    Filed: June 10, 2021
    Date of Patent: November 7, 2023
    Assignee: ROHM CO., LTD.
    Inventor: Bungo Tanaka
  • Patent number: 11798942
    Abstract: A semiconductor device and method includes: forming a first fin and a second fin on a substrate; forming a dummy gate material over the first fin and the second fin; forming a recess in the dummy gate material between the first fin and the second fin; forming a sacrificial oxide on sidewalls of the dummy gate material in the recess; filling an insulation material between the sacrificial oxide on the sidewalls of the dummy gate material in the recess; removing the dummy gate material and the sacrificial oxide; and forming a first replacement gate over the first fin and a second replacement gate over the second fin.
    Type: Grant
    Filed: April 26, 2021
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Sheng Fan, Bao-Ru Young, Tung-Heng Hsieh
  • Patent number: 11798941
    Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.
    Type: Grant
    Filed: November 16, 2020
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Yuan Lu, Sai-Hooi Yeong
  • Patent number: 11791263
    Abstract: An integrated circuit product includes a first layer of insulating material including a first insulating material. The first layer of insulating material is positioned above a device layer of a semiconductor substrate. The first layer of insulating material has a lowermost surface positioned above an uppermost surface of a gate of a transistor in a device layer of a semiconductor substrate. The device layer includes transistors. A metallization blocking structure is positioned in an opening in the first layer of insulating material. The metallization blocking structure has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. The metallization blocking structure includes a second insulating material that is different from the first insulating material. A metallization trench is defined in the first layer of insulating material on opposite sides of the metallization blocking structure.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: October 17, 2023
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Ruilong Xie, Lars Liebmann, Daniel Chanemougame, Geng Han
  • Patent number: 11784226
    Abstract: A metal-oxide semiconductor field effect transistor (MOSFET) includes a substrate and a well over the substrate, the well including dopants of a first conductivity-type. The well includes an anti-punch-through (APT) layer at an upper section of the well, the APT layer including the dopants of the first conductivity-type and further including carbon. The MOSFET further includes a source feature and a drain feature adjacent the APT layer, being of a second conductivity-type opposite to the first conductivity-type. The MOSFET further includes multiple channel layers over the APT layer and connecting the source feature to the drain feature, wherein the multiple channel layers are vertically stacked one over another. The MOSFET further includes a gate wrapping around each of the channel layers, such as in a gate-all-around device, wherein a first portion of the gate is disposed between a bottommost one of the channel layers and the APT layer.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: October 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Jhon Jhy Liaw
  • Patent number: 11776961
    Abstract: A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second device fin. The first dummy fin has a first height. A third device fin and a fourth device fin are each located in a second region of the semiconductor device. The second region has a second pattern density that is greater the first pattern density. A second dummy fin is located in the second region. The second dummy fin is disposed between the third device fin and the fourth device fin. The second dummy fin has a second height that is greater than the first height.
    Type: Grant
    Filed: January 4, 2022
    Date of Patent: October 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zhi-Chang Lin, Wei-Hao Wu, Jia-Ni Yu
  • Patent number: 11764289
    Abstract: In a method of manufacturing a semiconductor device, a dummy gate structure is formed over a channel region of a semiconductor layer, a source/drain epitaxial layer is formed on opposing sides of the dummy gate structure, a planarization operation is performed on the source/drain epitaxial layer, the planarized source/drain epitaxial layer is patterned, the dummy gate structure is removed to form a gate space, and a metal gate structure is formed in the gate space.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: September 19, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Blandine Duriez, Georgios Vellianitis, Gerben Doornbos, Marcus Johannes Henricus Van Dal, Martin Christopher Holland, Timothy Vasen
  • Patent number: 11764104
    Abstract: Embodiments of the present disclosure may generally relate to systems, apparatus, and/or processes to form volumes of oxide within a fin, such as a Si fin. In embodiments, this may be accomplished by applying a catalytic oxidant material on a side of a fin and then annealing to form a volume of oxide. In embodiments, this may be accomplished by using a plasma implant technique or a beam-line implant technique to introduce oxygen ions into an area of the fin and then annealing to form a volume of oxide. Processes described here may be used manufacture a transistor, a stacked transistor, or a three-dimensional (3-D) monolithic stacked transistor.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: September 19, 2023
    Assignee: Intel Corporation
    Inventors: Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Aaron Lilak, Ehren Mannebach, Patrick Morrow, Anh Phan, Willy Rachmady, Hui Jae Yoo
  • Patent number: 11764300
    Abstract: A semiconductor structure and its fabrication method are provided. The method includes: providing a substrate; forming an isolation structure on the substrate; forming a gate structure on the isolation structure; forming a first opening in the gate structure; and forming a first conductive structure in the first opening. Sidewall surfaces of the first conductive structure are in contact with a gate electrode layer of the gate structure.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: September 19, 2023
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Nan Wang
  • Patent number: 11742238
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: August 29, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-I Lin, Bang-Tai Tang
  • Patent number: 11735467
    Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: August 22, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Ashish Pal, Gaurav Thareja, Sankuei Lin, Ching-Mei Hsu, Nitin K. Ingle, Ajay Bhatnagar, Anchuan Wang
  • Patent number: 11735649
    Abstract: A method for forming a fin field effect transistor device structure includes forming a first fin structure in an input/output region of the substrate with a fin top layer and a hard mask layer over the first fin structure. The method also includes forming a dummy oxide layer across the first fin structure. The method also includes forming a dummy gate structure over the dummy oxide layer across the first fin structure. The method also includes forming spacers on opposite sides of the dummy gate structure. The method also includes removing the dummy gate structure over the first fin structure. The method also includes removing the dummy oxide layer and trimming the first fin structure. The method also includes forming a first oxide layer across the first fin structure. The method also includes forming a first gate structure over the first oxide layer across the first fin structure.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Cheng Ching, Kuan-Ting Pan, Shi-Ning Ju, Chih-Hao Wang
  • Patent number: 11721590
    Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate; forming a second fin extending from the substrate, the second fin being spaced apart from the first fin by a first distance; forming a metal gate stack over the first fin and the second fin; depositing a first inter-layer dielectric over the metal gate stack; and forming a gate contact extending through the first inter-layer dielectric to physically contact the metal gate stack, the gate contact being laterally disposed between the first fin and the second fin, the gate contact being spaced apart from the first fin by a second distance, where the second distance is less than a second predetermined threshold when the first distance is greater than or equal to a first predetermined threshold.
    Type: Grant
    Filed: July 12, 2022
    Date of Patent: August 8, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Chieh Wu, Pang-Chi Wu, Kuo-Yi Chao, Mei-Yun Wang, Hsien-Huang Liao, Tung-Heng Hsieh, Bao-Ru Young
  • Patent number: 11715781
    Abstract: A semiconductor device includes a substrate, two source/drain (S/D) regions over the substrate, a channel region between the two S/D regions and including a semiconductor material, a deposited capacitor material (DCM) layer over the channel region a dielectric layer over the DCM layer and a metallic gate electrode layer over the dielectric layer.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wang-Chun Huang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11699756
    Abstract: Integrated circuit transistor structures are disclosed that reduce n-type dopant diffusion, such as phosphorous or arsenic, from the source region and the drain region of a germanium n-MOS device into adjacent shallow trench isolation (STI) regions during fabrication. The n-MOS transistor device may include at least 75% germanium by atomic percentage. In an example embodiment, the structure includes an intervening diffusion barrier deposited between the n-MOS transistor and the STI region to provide dopant diffusion reduction. In some embodiments, the diffusion barrier may include silicon dioxide with carbon concentrations between 5 and 50% by atomic percentage. In some embodiments, the diffusion barrier may be deposited using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) techniques to achieve a diffusion barrier thickness in the range of 1 to 5 nanometers.
    Type: Grant
    Filed: December 2, 2021
    Date of Patent: July 11, 2023
    Assignee: Intel Corporation
    Inventors: Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory C. Bomberger, Tahir Ghani, Jack T. Kavalieros, Benjamin Chu-Kung, Seung Hoon Sung, Siddharth Chouksey
  • Patent number: 11699700
    Abstract: An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: July 11, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jinhyeok Song, Mingeun Song
  • Patent number: 11694931
    Abstract: A semiconductor device includes a substrate, first and second fins protruding from the substrate, and first and second source/drain (S/D) features over the first and second fins respectively. The semiconductor device further includes an isolation feature over the substrate and disposed between the first and second S/D features, and a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature. A top portion of the isolation feature extends above the dielectric layer.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: July 4, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chang-Yun Chang, Ching-Feng Fu, Peng Wang
  • Patent number: 11683930
    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate comprising a memory region and a logic region; forming a memory gate in or on the memory region; forming a plurality of first poly-silicon gates on the memory region and surrounding the memory gate; and forming a plurality of second poly-silicon gates on the logic region simultaneously with the formation of the first poly-silicon gates.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: June 20, 2023
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Da-Zen Chuang, Pin-Hsiu Hsieh, Chih-Chung Sun
  • Patent number: 11682669
    Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: June 20, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Chi Huang, Ying-Liang Chuang, Ming-Hsi Yeh, Kuo-Bin Huang
  • Patent number: 11677014
    Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: June 13, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hao Hsu, Yu-Chun Ko, Yu-Chang Liang, Kao-Ting Lai
  • Patent number: 11670719
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a first semiconductor pattern on a substrate, the first semiconductor pattern including a lower channel; a second semiconductor pattern on the first semiconductor pattern and spaced apart from the first semiconductor pattern in a vertical direction, the second semiconductor pattern including an upper channel extending in the vertical direction; a gate electrode covering the lower channel and surrounding the upper channel; and source/drain patterns on opposite sides of the upper channel, wherein the substrate and the first semiconductor pattern have a doping concentration of 1019/cm3 or less.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: June 6, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sungmin Kim
  • Patent number: 11664378
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin having a first portion having a first width and a second portion having a second width substantially less than the first width. The first portion has a first surface, the second portion has a second surface, and the first and second surfaces are connected by a third surface. The third surface forms an angle with respect to the second surface, and the angle ranges from about 90 degrees to about 130 degrees. The structure further includes a gate electrode layer disposed over the semiconductor fin and source/drain epitaxial features disposed on the semiconductor fin on opposite sides of the gate electrode layer.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: May 30, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Ting Lan, Shi Ning Ju, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11664268
    Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.
    Type: Grant
    Filed: July 12, 2021
    Date of Patent: May 30, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Hsiang Lin, Keng-Chu Lin, Shwang-Ming Jeng, Teng-Chun Tsai, Tsu-Hsiu Perng, Fu-Ting Yen
  • Patent number: 11658076
    Abstract: Semiconductor devices are provided. An exemplary semiconductor device includes a semiconductor substrate having a first region. The first region includes a first middle region and a first edge region adjacent to and surrounding the first middle region; and a surface of the first middle region of the semiconductor substrate is higher than a surface of the first edge region of the semiconductor substrate. The semiconductor device also includes a plurality of first fins discretely formed on the first middle region of the semiconductor substrate; and an isolation structure formed on the first middle region of the semiconductor substrate and the first edge region of the semiconductor substrate and covering portions of sidewall surfaces of the first fins.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: May 23, 2023
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Fei Zhou
  • Patent number: 11652104
    Abstract: A semiconductor device including a substrate having a plurality of active fins, each of the plurality of active fins extending in a first direction, first and second gate structures crossing over the plurality of active fins, the first and second gate structures extending in a second direction different from the first direction, the first and second gate structures spaced apart from each other in the first direction, at least one insulating barrier extending in the first direction and between the plurality of active fins, the insulating barrier separating lower portions of the first and second gate structures from each other, and a gate isolation layer connected to a portion of the insulating barrier, the gate isolation unit separating upper portions of the first and second gate structures from each other may be provided.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: May 16, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong Hyun Kim, Sung Chul Park
  • Patent number: 11646233
    Abstract: The present application provides a method for manufacturing a fin field-effect transistor, comprising steps of: forming a plurality of strip fins and dummy gates on a substrate, wherein side walls are formed on both sides of the dummy gate; forming a source or a drain on the plurality of strip fins; depositing an interlayer dielectric layer, and performing chemical mechanical planarization (CMP) on the interlayer dielectric layer to expose the top surfaces of the dummy gates; forming a single diffusion break in a single diffusion region; and replacing the dummy gates other than the dummy gate in the single diffusion region with metal gates.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: May 9, 2023
    Assignee: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
    Inventors: Tiancai Yan, Bingxun Su
  • Patent number: 11640995
    Abstract: Ferroelectric field effect transistors (FeFETs) having band-engineered interface layers are described. In an example, an integrated circuit structure includes a semiconductor channel layer above a substrate. A metal oxide material is on the semiconductor channel layer, the metal oxide material having no net dipole. A ferroelectric oxide material is on the metal oxide material. A gate electrode is on the ferroelectric oxide material, the gate electrode having a first side and a second side opposite the first side. A first source/drain region is at the first side of the gate electrode, and a second source/drain region is at the second side of the gate electrode.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: May 2, 2023
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Brian S. Doyle, Kevin P. O'Brien, Abhishek A. Sharma, Elijah V. Karpov, Kaan Oguz
  • Patent number: 11637186
    Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device according to the present disclosure includes a fin extending from a substrate, a gate structure over a channel region of the fin, a source/drain contact over a source/drain region of the fin, a gate cut feature adjacent the gate structure, a source/drain contact isolation feature adjacent the source/drain contact, a spacer extending along a sidewall of the gate cut feature and a sidewall of the gate structure, a liner extending along a sidewall of the source/drain contact isolation feature and a sidewall of the source/drain contact; and an air gap sandwiched between the spacer and the liner. The gate cut feature and the source/drain contact isolation feature are separated by the spacer, the air gap and the liner.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: April 25, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 11637041
    Abstract: The subject disclosure relates to high mobility complementary metal-oxide-semiconductor (CMOS) devices and techniques for forming the CMOS devices with fins formed directly on the insulator. According to an embodiment, a method for forming such a high mobility CMOS device can comprise forming, via a first epitaxial growth of a first material, first pillars within first trenches formed within a dielectric layer, wherein the dielectric layer is formed on a silicon substrate, and wherein the first pillars comprise first portions with defects and second portions without the defects. The method can further comprise forming second trenches within a first region of the dielectric layer, and further forming second pillars within the second trenches via a second epitaxial growth of one or more second materials using the second portions of the first pillars as seeds for the second epitaxial growth.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: April 25, 2023
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Xin Miao, Chen Zhang, Kangguo Cheng, Wenyu Xu
  • Patent number: 11631736
    Abstract: A semiconductor structure includes an isolation structure; first and second source/drain (S/D) features over the isolation structure, defining a first direction from the first S/D feature to the second S/D feature from a top view; one or more channel layers connecting the first and the second S/D features; a gate structure between the first and the second S/D features and engaging each of the one or more channel layers; and a via structure under the first S/D feature and electrically connecting to the first S/D feature. In a cross-sectional view perpendicular to the first direction, the via structure has a profile that widens and then narrows along a bottom-up direction.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: April 18, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Chia-Pin Lin
  • Patent number: 11616119
    Abstract: Some embodiments include an integrated assembly having a laterally-extending container-shaped first capacitor electrode, and having a laterally-extending container-shaped second capacitor electrode laterally offset from the first capacitor electrode. Capacitor dielectric material lines interior surfaces and exterior surfaces of the container-shaped first and second capacitor electrodes. A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends along the lined interior and exterior surfaces of the first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: March 28, 2023
    Assignee: Micron Technology, Inc.
    Inventor: Che-Chi Lee
  • Patent number: 11610977
    Abstract: A device includes a first channel layer over a semiconductor substrate, a second channel layer over the first channel layer, and a third channel layer over the second channel layer. The channel layers each connects a first and a second source/drain along a first direction. The device also includes a first gate portion between the first and second channel layers; a second gate portion between the second and third channel layers; a first inner spacer between the first and second channel layers and between the first gate portion and the first source/drain; and a second inner spacer between the second and third channel layers and between the second gate portion and the first source/drain. The first and second gate portions have substantially the same gate lengths along the first direction. The first inner spacer has a width along the first direction that is greater than the second inner spacer has.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: March 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
  • Patent number: 11605727
    Abstract: In a method of manufacturing a semiconductor device, a fin structure including a stacked layer of first and second semiconductor layers and a hard mask layer over the stacked layer is formed. A sacrificial cladding layer is formed over at least sidewalls of the exposed hard mask layer and stacked layer. An etching is performed to remove lateral portions of the sacrificial cladding layer, thereby leaving the sacrificial cladding layer on sidewalls of the exposed hard mask layer and stacked layer. A first dielectric layer and a second dielectric layer made of a different material than the first dielectric layer are formed. The second dielectric layer is recessed, and a third dielectric layer made of a different material than the second dielectric layer is formed on the recessed second dielectric layer. During the etching operation, a protection layer is formed over the sacrificial cladding layer.
    Type: Grant
    Filed: July 6, 2021
    Date of Patent: March 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Wen Shen, Chen-Ping Chen
  • Patent number: 11600531
    Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, and a metal gate adjacent to the isolation structure. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: March 7, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Kai Hsu, Ssu-I Fu, Chun-Ya Chiu, Chi-Ting Wu, Chin-Hung Chen, Yu-Hsiang Lin
  • Patent number: 11600696
    Abstract: Embodiments disclosed herein include transistor devices and methods of forming such transistor devices. In an embodiment a transistor comprises a substrate, and a fin that extends up from the substrate. In an embodiment, the fin comprises a source region, a drain region, and a channel region between the source region and the drain region. In an embodiment, the transistor further comprises and a cavity in the fin, where the cavity is below the channel region. In an embodiment, the transistor further comprises a gate stack over the fin.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: March 7, 2023
    Assignee: Intel Corporation
    Inventors: Rishabh Mehandru, Stephen Cea, Anupama Bowonder, Juhyung Nam, Willy Rachmady
  • Patent number: 11600728
    Abstract: The present disclosure is directed to source/drain (S/D) epitaxial structures with enlarged top surfaces. In some embodiments, the S/D epitaxial structures include a first crystalline epitaxial layer comprising facets; a non-crystalline epitaxial layer on the first crystalline layer; and a second crystalline epitaxial layer on the non-crystalline epitaxial layer, where the second crystalline epitaxial layer is substantially facet-free.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: March 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Hsien Tu, Wei-Fan Lee
  • Patent number: 11600616
    Abstract: In a method of manufacturing a semiconductor device, a fin structure protruding from a first isolation insulating layer is formed. A second isolation insulating layer made of different material than the first isolation insulating layer is formed so that a first upper portion of the fin structure is exposed. A dummy gate structure is formed over the exposed first upper portion of the first fin structure. The second isolation insulating layer is etched by using the dummy gate structure as an etching mask. The dummy gate structure is removed so that a gate space is formed. The second isolation insulating layer is etched in the gate space so that a second upper portion of the fin structure is exposed from the first isolation insulating layer. A gate dielectric layer and a gate electrode layer are formed over the exposed second portion of the fin structure.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: March 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Gerben Doornbos, Mark Van Dal
  • Patent number: 11594449
    Abstract: A method of making a semiconductor structure includes depositing a first passivation material between adjacent conductive elements on a substrate, wherein a bottommost surface of the first passivation material is coplanar with a bottommost surface of each of the adjacent conductive elements. The method further includes depositing a second passivation material on the substrate, wherein the second passivation material contacts a sidewall of each of the adjacent conductive elements and a sidewall of the first passivation material, a bottommost surface of the second passivation material is coplanar with the bottommost surface of each of the adjacent conductive elements, and the second passivation material is different from the first passivation material.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: February 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Ming Lee, Hung-Che Liao, Kun-Tsang Chuang, Wei-Chung Lu