Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions Patents (Class 438/142)
- Having additional electrical device (Class 438/145)
- Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.) (Class 438/146)
- Changing width or direction of channel (e.g., meandering channel, etc.) (Class 438/147)
- Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.) (Class 438/148)
- Specified crystallographic orientation (Class 438/168)
- Complementary Schottky gate field effect transistors (Class 438/169)
- And bipolar device (Class 438/170)
- And passive electrical device (e.g., resistor, capacitor, etc.) (Class 438/171)
- Having heterojunction (e.g., HEMT, MODFET, etc.) (Class 438/172)
- Vertical channel (Class 438/173)
- Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) (Class 438/174)
- Buried channel (Class 438/175)
- Plural gate electrodes (e.g., dual gate, etc.) (Class 438/176)
- Closed or loop gate (Class 438/177)
- Elemental semiconductor (Class 438/178)
- Asymmetric (Class 438/179)
- Self-aligned (Class 438/180)
- Specified crystallographic orientation (Class 438/187)
- Complementary junction gate field effect transistors (Class 438/188)
- And bipolar transistor (Class 438/189)
- And passive device (e.g., resistor, capacitor, etc.) (Class 438/190)
- Having heterojunction (Class 438/191)
- Vertical channel (Class 438/192)
- Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) (Class 438/194)
- Plural gate electrodes (Class 438/195)
- Including isolation structure (Class 438/196)
- Specified crystallographic orientation (Class 438/198)
- Complementary insulated gate field effect transistors (i.e., CMOS) (Class 438/199)
- Including bipolar transistor (i.e., BiMOS) (Class 438/234)
- Including diode (Class 438/237)
- Including passive device (e.g., resistor, capacitor, etc.) (Class 438/238)
- Having additional gate electrode surrounded by dielectric (i.e., floating gate) (Class 438/257)
- Vertical channel (Class 438/268)
- Making plural insulated gate field effect transistors of differing electrical characteristics (Class 438/275)
- Making plural insulated gate field effect transistors having common active region (Class 438/279)
- Having underpass or crossunder (Class 438/280)
- Having fuse or integral short (Class 438/281)
- Buried channel (Class 438/282)
- Plural gate electrodes (e.g., dual gate, etc.) (Class 438/283)
- Closed or loop gate (Class 438/284)
- Utilizing compound semiconductor (Class 438/285)
- Asymmetric (Class 438/286)
- Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound (Class 438/287)
- Having step of storing electrical charge in gate dielectric (Class 438/288)
- Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) (Class 438/289)
- Direct application of electrical current (Class 438/292)
- Fusion or solidification of semiconductor region (Class 438/293)
- Including isolation structure (Class 438/294)
- Self-aligned (Class 438/299)
- Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) (Class 438/308)