Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) Patents (Class 438/197)
- And additional electrical device (Class 438/200)
- Having gate surrounded by dielectric (i.e., floating gate) (Class 438/211)
- Vertical channel (Class 438/212)
- Common active region (Class 438/213)
- Having underpass or crossunder (Class 438/214)
- Having fuse or integral short (Class 438/215)
- Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound (Class 438/216)
- Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.) (Class 438/217)
- Including isolation structure (Class 438/218)
- Self-aligned (Class 438/229)
- And contact formation (Class 438/233)
- Including additional field effect transistor (e.g., sense or access transistor, etc.) (Class 438/258)
- Including forming gate electrode in trench or recess in substrate (Class 438/259)
- Textured surface of gate insulator or gate electrode (Class 438/260)
- Multiple interelectrode dielectrics or nonsilicon compound gate insulator (Class 438/261)
- Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.) (Class 438/262)
- Tunneling insulator (Class 438/264)
- Oxidizing sidewall of gate electrode (Class 438/265)
- Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.) (Class 438/266)