Abstract: A display device includes: a substrate defining an opening and including a display area and a non-display area between the opening and display area, a pixel array including a plurality of pixels in the display area, each of the pixels having a pixel electrode, an opposite electrode facing the pixel electrode, and an intermediate layer between the pixel electrode and opposite electrode, a plurality of data lines bypassing the opening in the non-display area, first and second insulating layers, which cover the plurality of data lines, a conductive layer between the first and second insulating layers, and a thin film encapsulation layer covering the pixel array, the thin film encapsulation layer including at least one organic encapsulation layer and at least one inorganic encapsulation layer, and wherein, in the non-display area, a first groove is defined by the first insulating layer, the conductive layer, and the second insulating layer.

Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.

Abstract: A package structure that includes a cavity between a solid-state imaging element and a cover member prevents damage caused due to an increase in the internal pressure in the cavity, for example, upon reflow. A solid-state imaging device includes a solid-state imaging element that includes a semiconductor substrate and of which a light-receiving side is a side of one of plate surfaces of the semiconductor substrate; a translucent cover member that is provided on the light-receiving side of the solid-state imaging element, and a support that is provided on the light-receiving side of the solid-state imaging element, and supports the cover member. The semiconductor substrate further includes a concave portion that is formed on another of the plate surfaces of the semiconductor substrate.

Abstract: A method for manufacturing a semiconductor apparatus may include forming a patterned mask over a substrate, so that a first region of a first main surface of the substrate is covered by a plurality of spaced-apart sub-structural elements of a dielectric material, and second regions of the first main surface are not covered. Each of the plurality of sub-structural elements is arranged between adjacent second regions. The method also comprises carrying out a selective growth process of semiconductor material, so that the semiconductor material is grown over the second regions of the first main surface.

Abstract: A display device according to an embodiment of the present invention may include a substrate including a display area and a pad area located on one side of the display area, a pad electrode disposed in the pad area on the substrate, a protective insulating layer disposed on the substrate and the pad electrode to expose at least a part of a top surface of the pad electrode, an inorganic encapsulation layer disposed on the protective insulating layer, and a conductive layer disposed in the pad area between an end of the inorganic encapsulation layer adjacent to the pad electrode and the protective insulating layer.

Abstract: The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

Abstract: In a semiconductor chip manufacturing device which produces a plurality of LD chips by dividing a semiconductor wafer, being placed in a casing in which a fluid medium is filled, on which a block line is formed in advance and also on which a scribed line is inscribed so that a microcrack is formed along the scribed line, the semiconductor chip manufacturing device comprises a reception stage for supporting the semiconductor wafer, and a blade cutting-edge for pressurizing the semiconductor wafer along its crack portion made of the block line or the scribed line, so that the semiconductor wafer is divided into a plurality of LD chips by pressurizing it by means of the blade cutting-edge along the crack portion in the fluid medium.

Abstract: A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer.

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.

Abstract: A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 ?m, and a shortest distance between the second edge and the sixth edge is S2 ?m; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of ?1 with the vertical direction, the second side surface forms a second acute angle with a degree of ?2 with the vertical dire

Abstract: A hybrid panel method of (and apparatus for) manufacturing electronic devices, and electronic devices manufactured thereby. As non-limiting examples, various aspects of this disclosure provide an apparatus for manufacturing an electronic device, where the apparatus is operable to, at least, receive a panel to which a subpanel is coupled, cut around a subpanel through a layer of material, and remove such subpanel from the panel. The apparatus may also, for example, be operable to couple to an upper side of the subpanel, and remove the subpanel from the panel by, at least in part, operating to rotate the subpanel relative to the panel.

Abstract: A method for manufacturing an optoelectronic device including the steps of forming a substrate having a support face; forming a first series of first areas adapted to the formation of all or part of light-emitting diodes, forming a second series of second areas on the support face, adapted to the formation of light confinement wall elements capable of forming a light confinement wall, the second areas defining therebetween sub-pixel areas; forming, from the first areas, light-emitting diodes; forming, by the same technique as in the previous step, from the second areas, light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in the previous step.

Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.

Abstract: A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form an isolation region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the isolation region; and applying a first laser having a first wavelength to irradiate the base along the isolation region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.

Abstract: A patterned epitaxial structure laser lift-off device, including a substrate, reshaping structures, a transmittance adjustment structure, a patterned epitaxial structure, gas transmission systems, an ultraviolet source, a lift-off chamber and a light entry window. The gas transmission systems are at two sides of the lift-off chamber; the light entry window is on the lift-off chamber; the ultraviolet source is above the outside of the light entry window; the patterned epitaxial structure is inside the lift-off chamber; the substrate is on the patterned epitaxial structure. The patterned epitaxial structure includes an epitaxial structure, a sapphire substrate, patterned structures, oblique interfaces and planar interfaces, several patterned structures being uniformly designed on the epitaxial structure, each of the patterned structures being a V-shaped groove structure formed by two oblique interfaces, two adjacent patterned structures being connected by means of a planar interface.

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet light, a package substrate mounting the semiconductor light-emitting element, a sealing resin that seals the semiconductor light-emitting element, and a coat film further provided between a light output surface of the semiconductor light-emitting element and the sealing resin. The refractive index of the coat film and the refractive index of the sealing resin are smaller than the refractive index of a member constituting the light output surface of the semiconductor light-emitting element, and the refractive index difference between the coat film and the sealing resin is not more than 0.15.

Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21).

Abstract: The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed.

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Abstract: In a method for manufacturing a light-emitting element, a second irradiation process includes forming a first modified region at a first distance from a second surface in a thickness direction of a sapphire substrate, forming a second modified region at a second distance from the second surface in the thickness direction, the second distance being less than the first distance, the second modified region being shifted in a first direction from the first modified region, and forming a third modified region at a third distance from the second surface in the thickness direction, the third distance being less than the second distance, the third modified region overlapping the first modified region in a top-view. In the thickness direction of the sapphire substrate, a greater number of modified regions that include second modified portions are formed than modified regions that include first modified portions.

Abstract: An optical device includes a first circuit layer, a light detector, a first conductive pillar and an encapsulant. The first circuit layer has an interconnection layer and a dielectric layer. The light detector is disposed on the first circuit layer. The light detector has a light detecting area facing away from the first circuit layer and a backside surface facing the first circuit layer. The first conductive pillar is disposed on the first circuit layer and spaced apart from the light detector. The first conductive pillar is electrically connected to the interconnection layer of the first circuit layer. The encapsulant is disposed on the first circuit layer and covers the light detector and the first conductive pillar. The light detector is electrically connected to the interconnection layer of the first circuit layer through the first conductive pillar. The backside surface of the light detector is exposed from the encapsulant.

Abstract: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

Abstract: A workpiece-separating device includes: a holding member which detachably holds one of the workpiece and the supporting body; a laser irradiation part which irradiates the separating layer with the laser beam through the other of the supporting body and the workpiece of the laminated body being held by the holding member; and a controlling part which controls an operation of the laser irradiation part, wherein the laser irradiation part has a laser scanner which moves the spot like laser beam along the laminated body, an entire irradiated face of the separating layer in an area of the laser beam irradiated from the laser scanner toward the laminated body is divided into a plurality of irradiation areas each having a band shape that is elongated in one of two directions intersecting a light irradiation direction from the laser irradiation part.

Abstract: A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

Abstract: A display motherboard and a manufacturing method thereof are provided. The display motherboard includes a first substrate and a second substrate that are assembled, a plurality of mutually independent display devices located between the first substrate and the second substrate, a first seal, and a second seal. The first seal is provided in a peripheral area of the display motherboard, the second seal is provided in a cutting area of the display motherboard, the cutting area is located around each of the display devices, and the second seal surrounds at least one of the display devices.

Abstract: Laser ablation processing method for debris-free and efficient removal of materials comprises the step of using a refrigeration device to condense the water vapor and form a thin frost layer on the materials at temperatures below the freezing point. The residual debris produced during the ablation process deposits on the frost layer that covers the material, which is easily removed when the frost layer melts. At the same time, the frost layer in the laser irradiation area melts to a liquid layer, which can effectively reduce the deposition of debris on the inner wall of the groove and thus improve the efficiency and quality of laser ablation. The method is applicable to debris-free laser processing on an arbitrary curved surface.

Abstract: There is provided semiconductor devices and methods of forming the same, including: a first substrate; and a second substrate adjacent to the first substrate, where a side wall of the second substrate includes one or more diced portions that can include a blade diced portion and a stealth diced portion; and also imaging devices and methods of forming the same, including: a first substrate; a transparent layer; an adhesive layer between the first substrate and the transparent layer; a second substrate, where the first substrate is disposed between the adhesive layer and the second substrate; and a groove extending from the adhesive layer to the second substrate, where the groove is filled with the adhesive layer.

Abstract: A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

Abstract: A display device includes a display substrate including: a pixel area provided in plurality separated from each other, and a plurality of through holes separated from each other; a light-emitting diode provided in plurality on the display substrate arranged in the pixel areas thereof; and a wiring line provided in plurality on the display substrate, the wiring line including a first wiring line and a second wiring line which are each electrically connected to the light-emitting diode.

Abstract: Provided is a chip component manufacturing method which enables a plurality of chip pieces to be handled while being pasted to a sheet, and in which it is possible to apply at least a surface treatment to a plurality of chip pieces while being pasted to a sheet. This chip component manufacturing method comprises: a step for retaining a green sheet or the like on a carrier sheet; a step for cutting, together with a portion of the carrier sheet, the green sheet or the like retained on the carrier sheet; a step for removing, together with a portion of the carrier sheet, at least a dummy portion of the green sheet or the like that has been cut, so as to leave a plurality of chip pieces on the carrier sheet; and a step for applying at least a surface treatment to lateral surface portions of the plurality of chip pieces that have become exposed due to the removing while the plurality of chip pieces are being retained on the carrier sheet.

Abstract: A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components.

Abstract: A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 ?m in a top view.

Abstract: A light-emitting device includes a light-emitting element that includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer therebetween and is configured to emit first light from an upper surface of the first semiconductor layer; a protective film over the upper surface of the first semiconductor layer; a light-transmissive resin layer disposed in contact with the protective film; and a wavelength conversion layer facing the upper surface of the first semiconductor layer over the protective film and the light-transmissive resin layer, the upper surface of the first semiconductor layer having first projections and a flat portion, an upper surface of the protective film having second projections above the first projections. In a cross-sectional view a void is located above the flat portion and between the protective film and the light-transmissive resin layer.

Abstract: The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

Abstract: A light emitting element and a display device including the same are provided. The light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer, and an insulating layer surrounding an outer surface of the protective layer. A surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer includes a first lattice point, wherein the protective layer includes a first atom and a second atom, and wherein the first atom of the protective layer is at the first lattice point.

Abstract: A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.

Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.

Abstract: According to various embodiments of the present invention, an electronic device comprises: a heating unit, which includes a lower heating unit and an upper heating unit rotatably coupled to the lower heating unit, and heats an external electronic device mounted on at least one surface of the lower heating unit; a fixing unit, which is disposed to be adjacent to the lower heating unit, and has at least one part formed to be movable in the longitudinal direction of the lower heating unit, thereby fixing the external electronic device; a adsorption unit having one part, which is inserted into at least one recess formed on the upper heating unit, and adsorbing at least a region of the external electronic device; and a driving unit, which is disposed at one side or a surrounding part of the heating unit, can move in the direction perpendicular to the moving direction of the fixing unit, and rotates the upper heating unit by pressurizing the same.

Abstract: The invention relates to a method of producing a substrate with a functional layer. The method comprises providing a workpiece having a first surface and a second surface opposite the first surface, and forming a modified layer inside the workpiece, the modified layer comprising a plurality of modified regions. Further, the method comprises, after forming the modified layer inside the workpiece, forming the functional layer on the first surface of the workpiece and, after forming the functional layer on the first surface of the workpiece, dividing the workpiece along the modified layer, thereby obtaining the substrate with the functional layer. Dividing the workpiece along the modified layer comprises applying an external stimulus to the workpiece. Moreover, the invention relates to a substrate producing system for performing this method.

Abstract: A method of peeling a mother protective film from a mother display panel includes: laminating the mother protective film on the mother display panel, the mother display panel comprising a plurality of display cells each including a display area and a peripheral area in an outer portion of the display cells; forming a target area and a dummy area on the mother protective film by forming a cutting line having a closed loop shape enclosing the target area corresponding to the display cells and an additional cutting line in a first direction near the cutting line; arranging a fixing member on the mother protective film within the target area enclosed by the cutting line; and physically peeling off the dummy area from the mother display panel.

Abstract: A method of manufacturing an electroluminescent device includes providing a substrate including a first pixel and a second pixel configured to emit different colors; forming a first light-emitting layer and a first protecting layer over the substrate through a first opening of a first sacrificial layer; forming a second light-emitting layer and a second protecting layer over the substrate through a second opening of a second sacrificial layer; removing the first sacrificial layer together with the second sacrificial layer; and removing the first protecting layer from the first light-emitting layer, and the second protecting layer from the second light-emitting layer.

Abstract: A method of manufacturing an optoelectronic semiconductor chip includes providing a growth substrate, growing a semiconductor layer sequence on the growth substrate, depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate, depositing a layer on the metallization, coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence, separating the growth substrate from the semiconductor layer sequence, depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier, separating the carrier from the layer, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer including at least a part of a further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence, and coupling the layer stack to a chip carrier.

Abstract: A method for manufacturing a light-emitting element includes: providing a wafer comprising: a substrate having a first surface and a second surface, and a semiconductor structure provided at the first surface; irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions, a plurality of second modified regions, and a plurality of third modified regions in the interior of the substrate; and subsequently, separating the wafer into a plurality of light-emitting elements.

Abstract: A method for manufacturing micro light-emitting diode chips includes the steps of: providing a to-be-divided light-emitting component, which includes a metal substrate and a plurality of micro light-emitting diode dies disposed on the metal substrate to permit the metal substrate to define a to-be-etched region among the micro light-emitting diode dies; and etching the metal substrate to remove the to-be-etched region so as to divide the light-emitting component into a plurality of the micro light-emitting diode chips.

Abstract: A light emitting device including a light emitting element for emitting blue light; and a fluorescent film including a single crystal fluorescent material or a polycrystalline fluorescent material, wherein the fluorescent film absorbs the blue light and emits light having a wavelength different from that of the blue light, wherein the fluorescent film faces a surface of the light emitting element, and the fluorescent material included in the fluorescent film is represented by the following Formula (1): Y3-x-yLxMyAl5O12 wherein L is Gd or Lu, and M is Ce, Tb, Eu, Yb, Pr, Tm, or Sm, 0?x?2.999, and 0.001?y?0.1.

Abstract: An organic light emitting display device can include a substrate including a non-active area and an active area having a plurality of sub pixels; an encapsulation substrate facing the substrate; a concave part in the encapsulation substrate; a seal pattern disposed on the encapsulation substrate in a single continuous closed loop of seal pattern material, the single continuous closed loop of seal pattern material having a starting point and an ending point overlapping with each other and the concave part in the encapsulation substrate.

Abstract: A method includes a step of forming a plurality of semiconductor devices having active regions, in a wafer, a step of forming a plurality of cleavage grooves on an upper surface side of the wafer, and a step of cleaving the wafer from the upper surface side of the wafer to expose steps formed by the plurality of cleavage grooves, and the plurality of active regions, on a sectional surface, wherein the active region is provided in a semicircle that has a radius that is a distance from a bottom of the cleavage groove to a lower surface of the wafer, and has a center that is on the lower surface of the wafer and is immediately below the cleavage groove in a cleavage propagation direction.