Making Device Or Circuit Emissive Of Nonelectrical Signal Patents (Class 438/22)
  • Patent number: 11222995
    Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: January 11, 2022
    Assignees: NIKKISO CO., LTD., SCIVAX CORPORATION.
    Inventors: Noritaka Niwa, Tetsuhiko Inazu, Yasumasa Suzaki, Akifumi Nawata, Satoru Tanaka
  • Patent number: 11211525
    Abstract: An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 ?m before reaching the inclined sidewall.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: December 28, 2021
    Assignee: Ohio State Innovation Foundation
    Inventors: Siddharth Rajan, Yuewei Zhang, Zane Jamal-Eddine, Fatih Akyol
  • Patent number: 11212901
    Abstract: A lighting apparatus includes a light module, a driver and a wireless circuit. The light module includes an elongated substrate, a first LED chip layer mounted on a first side of the substrate and a second LED chip layer mounted on a second side of the substrate, and two electrodes on two opposite ends of the substrate. The wireless circuit is used for receiving an external command from an external device to control the driver to adjust the driving power of the light module to mix lights of different optical parameters. The driver has a plugging socket for plugging the wireless circuit.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: December 28, 2021
    Assignee: XIAMEN ECO LIGHTING CO. LTD.
    Inventor: Hong Kui Jiang
  • Patent number: 11211326
    Abstract: An insulating layer containing fillers is formed to cover a first wiring layer. An opening portion, in which the first wiring layer is exposed, is formed in the insulating layer. A first alkali treatment, an ultrasonic cleaning treatment, and a second alkali treatment are sequentially performed on an upper surface of the insulating layer, on an inner wall surface of the opening portion, and an upper surface of the first wiring layer exposed in the opening portion. A second wiring layer electrically connected to the first wiring layer is formed by filling the opening portion by plating. The second wiring layer extends from an inside of the opening portion to the upper surface of the insulating layer.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: December 28, 2021
    Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
    Inventors: Yoshihisa Kanbe, Tomoyuki Shimodaira, Takashi Sato
  • Patent number: 11199658
    Abstract: Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: December 14, 2021
    Assignee: Magic Leap, Inc.
    Inventors: Arturo Manuel Martinez, Jr., Vikramjit Singh, Michal Beau Dennison Vaughn, Joseph Christopher Sawicki
  • Patent number: 11158762
    Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: October 26, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
  • Patent number: 11143818
    Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: October 12, 2021
    Assignees: INTEL CORPORATION, REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Meer Nazmus Sakib, Guan-Lin Su, John Heck, Haisheng Rong, Ming C. Wu
  • Patent number: 11140782
    Abstract: A display device includes a display panel having a curved shape that is curved such that a convex surface thereof faces the outside of a housing of the electronic appliance and also includes a circuit board that is connected to the display panel at a connection point and is curved so as to correspond to the curved shape of the display panel. In the display device, the circuit board extends outward from the display panel and is bent into a U shape in such a manner that an end of the circuit board faces toward a central portion of the display panel. In addition, the circuit board has an extension portion that is formed so as to extend from the connection point in the same direction as an extending direction of the display panel.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: October 5, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Yohichi Takazane
  • Patent number: 11133444
    Abstract: The light emitting apparatus includes a light emitting device including a first base at which a laminate is provided and a second base at which the light emitting device is provided. The laminate includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from the conductivity type of the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer. The laminate includes a plurality of columnar sections. Connecting member is so provided between the adjacent columnar sections as to be connected to the adjacent columnar sections. The laminate is connected to the second base on the side opposite the first base.
    Type: Grant
    Filed: May 23, 2018
    Date of Patent: September 28, 2021
    Inventor: Hiroyasu Kaseya
  • Patent number: 11107954
    Abstract: A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: August 31, 2021
    Assignee: Osram Oled GmbH
    Inventor: Jens Ebbecke
  • Patent number: 11094845
    Abstract: A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1?0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2?0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3?0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: August 17, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Massimo Drago, Alexander Frey, Joachim Hertkorn
  • Patent number: 11078073
    Abstract: Provided is a self-processing synthesis of hybrid nanostructures, novel nanostructures and uses thereof in the construction of electronic and optoelectronic devices.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: August 3, 2021
    Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.
    Inventors: Roie Yerushalmi, Yossef Paltiel, Ori Pinchas-Hazut, Sharon Waichman, Amir Ziv, Shira Yochelis
  • Patent number: 11063129
    Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: July 13, 2021
    Assignee: ELPIS TECHNOLOGIES INC.
    Inventors: Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu
  • Patent number: 11056446
    Abstract: A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: July 6, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: Wen-Long Lu
  • Patent number: 11018284
    Abstract: A light emitting element includes a package substrate, a first light-emitting diode chip, an encapsulation material and a light-shielding layer. The first light-emitting diode chip is disposed on the package substrate, the encapsulation material is disposed on the first light-emitting diode chip and the package substrate, and the light-shielding layer is disposed on the encapsulation material and has a first opening. In a top-view direction, the area of the first opening of the light-shielding layer is less than the area of the light emitting element.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: May 25, 2021
    Assignee: InnoLux Corporation
    Inventors: Chin-Lung Ting, Li-Wei Mao
  • Patent number: 11004893
    Abstract: A photonic integrated device is provided, includes a substrate, a two-dimensional material unit and semiconductor light-emitting units located at both sides thereof are disposed on the substrate; the two-dimensional material unit is provided with a luminescent two-dimensional material of which a luminous band is longer than that of the semiconductor light-emitting unit, and the semiconductor light-emitting unit provides a pump light source for the two-dimensional material unit to pump the luminescent two-dimensional material to emit light. The photonic integrated device in the present disclosure can obtain different luminous bands by changing the number of layers or kinds of the luminescent two-dimensional material.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: May 11, 2021
    Assignee: QINGDAO YICHENLEISHUO TECHNOLOGY CO., LTD
    Inventors: Ziyang Zhang, Hongmei Chen, Yuanqing Huang, Qinglu Liu
  • Patent number: 10996505
    Abstract: Embodiments of the present disclosure provide a color film substrate, a liquid crystal display panel and a liquid crystal display, wherein the color film substrate includes a base substrate and a photoresist layer formed on the base substrate, the photoresist layer includes a plurality of recess parts, each of the plurality of recess parts has an opening facing away from the base substrate and a lateral surface with a step structure, and an orthographic projection of the opening of each of the plurality of recess parts onto the base substrate overlaps with an orthographic projection of a bottom of each of the plurality of recess parts onto the base substrate.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: May 4, 2021
    Assignees: BOE Technology Group., Ltd., Chengdu BOE Optoelectronics Technology Co., Ltd.
    Inventors: Yuanjie Xu, Pengcheng Zang
  • Patent number: 10991916
    Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm?3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm?3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: April 27, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tae Kyung Won, Soo Young Choi, Sanjay D. Yadav
  • Patent number: 10982317
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: April 20, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Katsunari Obata, Toshihiko Takeda, Hiroshi Kawasaki, Hiroyuki Nishimura, Atsushi Maki, Hiromitsu Ochiai, Yoshinori Hirobe
  • Patent number: 10984708
    Abstract: To manufacture a display using light emitting diodes (LEDs), the LEDs are transferred from fabrication substrates where they are fabricated to a target substrate (e.g., a backplane) that forms part of a display. The LEDs are transferred in three stages: first from fabrication substrates to hard handles, subsequently from the hard handles to a carrier substrate, and last from the carrier substrate to the target substrate. The LEDs are placed onto the carrier substrate to form pixel arrangements. One or more pick-up tools are used to transfer the LEDs. Switchable adhesives are used to facilitate the transfer of the LEDs from the fabrication substrates to the target substrate.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: April 20, 2021
    Assignee: Facebook Technologies, LLC
    Inventors: Allan Pourchet, Pooya Saketi
  • Patent number: 10978625
    Abstract: A method for forming a light-transmissive member includes irradiating a principal surface of a cured resin body containing a silicone resin with ultraviolet rays through a photomask comprising one or more light-blocking regions and one or more light-transmissive regions, so as to cause a height of one or more first regions of the principal surface, which correspond to the one or more light-blocking regions of the photomask, to be different than a height of one or more second regions of the principal surface, which correspond to the one or more light-transmissive regions of the photomask.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: April 13, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Naoki Musashi, Takayoshi Wakaki
  • Patent number: 10950747
    Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: March 16, 2021
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
  • Patent number: 10930529
    Abstract: A light emitting diode (LED) includes an elastomeric material that facilitates adhesive attachment with a pick-up head for pick and place operations. The LED includes an epitaxial layer defining a mesa structure and a light emitting surface. The mesa structure includes an active layer to emit light, and the emitted light is reflected at the mesa structure toward a light emitting region of the light emitting surface and transmitted at the light emitting region. An elastomeric material is on a portion of the light emitting surface, such as the light emitting region or a passive region. At the light emitting region, the elastomeric material may be shaped as a lens that collimates light transmitted from the light emitting region, and also facilitates adhesion to the pick-up head. At the passive region, the elastomeric material facilitates adhesion to the pick-up head without interfering with light emitted from the light emitting region.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: February 23, 2021
    Assignee: Facebook Technologies, LLC
    Inventors: Pooya Saketi, Patrick Joseph Hughes, William Padraic Henry, Joseph O'Keeffe
  • Patent number: 10923364
    Abstract: A method comprises: arranging a plurality of semiconductor chips above a carrier, wherein active main surfaces of the semiconductor chips face the carrier; filling a cavity with a molding material; pressing the semiconductor chips arranged on the carrier into the molding material; and separating the molding material with the semiconductor chips embedded therein from the carrier, wherein main surfaces of the semiconductor chips that are situated opposite the active main surfaces are covered by the molding material.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: February 16, 2021
    Assignee: Infineon Technologies AG
    Inventors: Kristina Mayer, Michael Ledutke, Johannes Lodermeyer
  • Patent number: 10886257
    Abstract: The present application relates to a micro LED display device and, a method for manufacturing the same. The method includes the following steps. First, a plurality of LED chips are formed on a supplying substrate. Next, a first substrate defining a plurality of groups of printed circuits is provided. Then the supplying substrate is overlaid in an inverted manner on the first substrate in such a manner that the LED chips are aligned with and attached onto the groups of printed circuits correspondingly. After the LED chips are detached from the supplying substrate, the supplying substrate is removed. Then a sol-gel glass is filled into gaps among the LED chips. Finally a second substrate is bonded with the first substrate. The present disclosure is capable of improving the yield rate and the reliability.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: January 5, 2021
    Assignee: KAISTAR LIGHTING (XIAMEN) CO., LTD.
    Inventor: Steve Mengyuan Hong
  • Patent number: 10861887
    Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: December 8, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gwi-Deok Ryan Lee, Taeyon Lee
  • Patent number: 10854775
    Abstract: A method and a device for carrying out the method for transferring electronic components from a carrier substrate to a receiving substrate.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: December 1, 2020
    Assignee: MÜHLBAUER GMBH & CO. KG
    Inventors: Klaus Schlemper, Hans-Peter Monser, Sigmund Niklas
  • Patent number: 10854774
    Abstract: A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: December 1, 2020
    Assignee: DISCO CORPORATION
    Inventors: Tasuku Koyanagi, Hiroki Takeuchi
  • Patent number: 10840078
    Abstract: Devices, methods, and systems for enclosures for an ion trapping device are described herein. One enclosure for an ion trapping device includes a heat spreader base that includes a perimeter portion and a center portion connected to the perimeter portion by a bridge portion, a grid array coupled to the heat spreader, a spacer with a plurality of studs coupled to the grid array, an interposer and ion trap die coupled to the spacer, a connector coupled to interposer, and a roof portion coupled to the heat spreader base.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: November 17, 2020
    Assignee: Honeywell International Inc.
    Inventors: Daniel Youngner, Jason Simmons, Thomas Ohnstein, Jay Gordon Schwitchtenberg
  • Patent number: 10797470
    Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: October 6, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Takeshi Kawashima, Shunichi Sato
  • Patent number: 10770622
    Abstract: One embodiment of a light-emitting element comprises: a substrate; a first-conductive type semiconductor layer disposed on the substrate and including at least one pit; a superlattice layer disposed on the first-conductive type semiconductor layer and including at least one pit; an active layer disposed on the superlattice layer and including at least one pit; an electron blocking layer disposed on the active layer and including at least one pit; a pit layer disposed on the electron blocking layer and including at least one pit; and a second-conductive type semiconductor layer disposed on the pit layer, wherein the pit layer can be doped with Mg at at least a portion thereof.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: September 8, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Young Hun Han
  • Patent number: 10756233
    Abstract: A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: August 25, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Naoto Inoue, Sho Kusaka
  • Patent number: 10742000
    Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: August 11, 2020
    Assignee: II-VI Delaware Inc.
    Inventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum
  • Patent number: 10700489
    Abstract: Provided is an optical semiconductor device including a semiconductor substrate; a first semiconductor multilayer that is stacked on a first surface side of the semiconductor substrate, has a mesa structure extending along a light emitting direction, and emits light from an exit end surface; an electrode pad portion for wire bonding which is electrically connected to the upper surface of the mesa structure of the first semiconductor multilayer, is disposed on one side of the mesa structure, and is electrically connected to outside; and an electrode pad peripheral portion including a first rising surface which is in contact with the outer edge of the electrode pad portion on the exit end surface side and rises along the stacking direction from the electrode pad portion, in which a lower surface of the electrode pad portion is higher than the upper surface of the mesa structure of the first semiconductor multilayer.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: June 30, 2020
    Assignee: Lumentum Japan, Inc.
    Inventors: Akira Nakanishi, Noriko Sasada, Takayuki Nakajima
  • Patent number: 10692923
    Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: June 23, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Sivapackia Ganapathiappan, Boyi Fu, Hou T. Ng, Nag B. Patibandla
  • Patent number: 10680149
    Abstract: A method for manufacturing at last one light-emitting device including a light-transmissive member, a light-emitting element, and a reflective member, the method including: providing a holding member comprising a plurality of through-holes or recesses; disposing a light-transmissive member in at least one of the through-holes or at least one of the recesses; disposing a light-emitting element on the light-transmissive member in the at least one through-hole or the at least one recess; forming a reflective member in contact with a lateral surface defining the at least one through-hole or the at least one recess and covering a lateral surface of the light-emitting element; and removing the at least one light-emitting device from the holding member.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: June 9, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Toru Hashimoto
  • Patent number: 10656319
    Abstract: There is provided a high-efficiency and high-definition liquid crystal display device in which a white light source is constituted by using a fluorescent substance composed of a quantum dot having a minute particle size, and an LED light-emitting element, light from the light source is allowed to be incident from one lateral surface of a backlight provided on a rear surface of the liquid crystal display device, and thus an amount of the quantum dot fluorescent substance that is used is reduced, and the thickness of the liquid crystal display device is made smaller as a whole.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: May 19, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Shingo Kokudo, Eiichi Kanaumi
  • Patent number: 10649138
    Abstract: A photonic chip having a photonic-circuit layer supported on a substrate, the photonic-circuit layer including a suspended portion that extends beyond the outline of the substrate on the photonic-circuit layer. In various embodiments, the suspended portion may host one or more functional optical elements, such as an on-chip grating coupler, an on-chip microring resonator, and an on chip optical waveguide, that can be used to couple light in and out of the photonic chip. The geometry of the suspended portion enables unencumbered (e.g., double-sided) access to the one or more functional optical elements located therein and can advantageously be used to place an optical fiber and/or a second photonic chip sufficiently close to those functional optical elements to achieve a high chip-to-fiber or chip-to-chip optical-coupling efficiency.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: May 12, 2020
    Assignee: Nokia Solutions and Networks Oy
    Inventors: Po Dong, Kwangwoong Kim, Argishti Melikyan
  • Patent number: 10636887
    Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: April 28, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu
  • Patent number: 10629842
    Abstract: A display device may include an organic light emitting device and an encapsulation structure provided on the organic light emitting device to seal the organic light emitting device. The encapsulation structure may include a first inorganic encapsulation layer provided on the organic light emitting device, an organic encapsulation layer provided on the first inorganic encapsulation layer, and a second inorganic encapsulation layer provided on the organic encapsulation layer. The first inorganic encapsulation layer may include a first inorganic layer provided on the organic light emitting device and a first plasma-treated layer provided on the first inorganic layer. The first plasma-treated layer may include an upper portion, in which a rugged structure is defined.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: April 21, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Cha-dong Kim, Bumsoo Kam, Hyunae Kim, Cheolho Park
  • Patent number: 10622498
    Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: April 14, 2020
    Assignee: W&WSENS DEVICES, INC.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Patent number: 10622415
    Abstract: A fingerprint recognition device and an OLED display device, which relate to the technical field of display and can solve the problems of a low recognition accuracy due to a large distance from a finger to a fingerprint recognition device. The fingerprint recognition device comprises recognition units alternately defined by a plurality of scanning lines and signal reading lines which are crisscrossed with each other. Each recognition unit is provided with a switching transistor and a photosensitive element. The photosensitive element comprises a photoelectric conversion layer and a collimator filter layer which are stacked successively. The collimator filter layer is used for irradiating incident light onto the photoelectric conversion layer in parallel, and the photoelectric conversion layer is used for performing photoelectric conversion on the incident light.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: April 14, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rui Xu, Haisheng Wang, Yingming Liu, Pengpeng Wang, Chih-Jen Cheng, Yunke Qin, Yuzhen Guo, Wei Liu
  • Patent number: 10615354
    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: April 7, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takkyun Ro, Kyung Bae Park, Ryuichi Satoh, Yong Wan Jin, Chul Joon Heo
  • Patent number: 10612139
    Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: April 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Maekawa, Takashi Sameshima, Shintaro Aoyama, Mikio Suzuki, Susumu Arima, Atsushi Matsumoto, Naoki Shibata
  • Patent number: 10601201
    Abstract: A vertical cavity surface emitting laser (VCSEL) array is provided. Each tunable VCSEL includes an output coupling mirror; a high reflectivity mirror; an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror; and a spacer layer disposed between the output coupling mirror and the active cavity material. A tuning cavity is defined within the spacer layer. Each VCSEL further includes a first contact pad and a second contact pad designed to receive a driving voltage; a tuning electrode on a first surface of the output coupling mirror for tuning the emission wavelength to a distinct wavelength.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: March 24, 2020
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Sylvie Rockman, Elad Mentovich
  • Patent number: 10586883
    Abstract: An energy storage capsule for storing energy in the form of photons. The body of the capsule may surround a sealed vacuum environment in which several layers of reactive material are contained, including an inner reflective coating, a first photovoltaic cell, an optical amplification medium, a second photovoltaic cell, and an outer reflective coating, provided in that order. The body of the capsule may also be reflective, for example polished aluminum. Light may be emitted from an LED wafer which may be integrated with the surface of the optical amplification medium, directed at the several layers of reactive material. Some photons may be reflected by the reflective material, storing them within the capsule, while others may be absorbed by the photovoltaic cells, powering the LEDs to transmit more photons. The thermal environment of the energy storage capsule may be maintained such that the LEDs can operate at over 100% efficiency.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: March 10, 2020
    Assignee: Quantum Photonics Corporation
    Inventor: Matthew Ryan Hankla
  • Patent number: 10580938
    Abstract: A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: March 3, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Jens Ebbecke, Petrus Sundgren, Roland Zeisel
  • Patent number: 10538862
    Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: January 21, 2020
    Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Patent number: 10526723
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: January 7, 2020
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • Patent number: 10529955
    Abstract: A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: January 7, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Richard Baisl, Philipp Schwamb, Simon Schicktanz, Johannes Rosenberger