Making Device Or Circuit Emissive Of Nonelectrical Signal Patents (Class 438/22)
  • Patent number: 10770622
    Abstract: One embodiment of a light-emitting element comprises: a substrate; a first-conductive type semiconductor layer disposed on the substrate and including at least one pit; a superlattice layer disposed on the first-conductive type semiconductor layer and including at least one pit; an active layer disposed on the superlattice layer and including at least one pit; an electron blocking layer disposed on the active layer and including at least one pit; a pit layer disposed on the electron blocking layer and including at least one pit; and a second-conductive type semiconductor layer disposed on the pit layer, wherein the pit layer can be doped with Mg at at least a portion thereof.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: September 8, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Young Hun Han
  • Patent number: 10756233
    Abstract: A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: August 25, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Naoto Inoue, Sho Kusaka
  • Patent number: 10742000
    Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: August 11, 2020
    Assignee: II-VI Delaware Inc.
    Inventors: Deepa Gazula, Nicolae Chitica, Marek Chacinski, Gary Landry, Jim Tatum
  • Patent number: 10700489
    Abstract: Provided is an optical semiconductor device including a semiconductor substrate; a first semiconductor multilayer that is stacked on a first surface side of the semiconductor substrate, has a mesa structure extending along a light emitting direction, and emits light from an exit end surface; an electrode pad portion for wire bonding which is electrically connected to the upper surface of the mesa structure of the first semiconductor multilayer, is disposed on one side of the mesa structure, and is electrically connected to outside; and an electrode pad peripheral portion including a first rising surface which is in contact with the outer edge of the electrode pad portion on the exit end surface side and rises along the stacking direction from the electrode pad portion, in which a lower surface of the electrode pad portion is higher than the upper surface of the mesa structure of the first semiconductor multilayer.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: June 30, 2020
    Assignee: Lumentum Japan, Inc.
    Inventors: Akira Nakanishi, Noriko Sasada, Takayuki Nakajima
  • Patent number: 10692923
    Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: June 23, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Sivapackia Ganapathiappan, Boyi Fu, Hou T. Ng, Nag B. Patibandla
  • Patent number: 10680149
    Abstract: A method for manufacturing at last one light-emitting device including a light-transmissive member, a light-emitting element, and a reflective member, the method including: providing a holding member comprising a plurality of through-holes or recesses; disposing a light-transmissive member in at least one of the through-holes or at least one of the recesses; disposing a light-emitting element on the light-transmissive member in the at least one through-hole or the at least one recess; forming a reflective member in contact with a lateral surface defining the at least one through-hole or the at least one recess and covering a lateral surface of the light-emitting element; and removing the at least one light-emitting device from the holding member.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: June 9, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Toru Hashimoto
  • Patent number: 10656319
    Abstract: There is provided a high-efficiency and high-definition liquid crystal display device in which a white light source is constituted by using a fluorescent substance composed of a quantum dot having a minute particle size, and an LED light-emitting element, light from the light source is allowed to be incident from one lateral surface of a backlight provided on a rear surface of the liquid crystal display device, and thus an amount of the quantum dot fluorescent substance that is used is reduced, and the thickness of the liquid crystal display device is made smaller as a whole.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: May 19, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Shingo Kokudo, Eiichi Kanaumi
  • Patent number: 10649138
    Abstract: A photonic chip having a photonic-circuit layer supported on a substrate, the photonic-circuit layer including a suspended portion that extends beyond the outline of the substrate on the photonic-circuit layer. In various embodiments, the suspended portion may host one or more functional optical elements, such as an on-chip grating coupler, an on-chip microring resonator, and an on chip optical waveguide, that can be used to couple light in and out of the photonic chip. The geometry of the suspended portion enables unencumbered (e.g., double-sided) access to the one or more functional optical elements located therein and can advantageously be used to place an optical fiber and/or a second photonic chip sufficiently close to those functional optical elements to achieve a high chip-to-fiber or chip-to-chip optical-coupling efficiency.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: May 12, 2020
    Assignee: Nokia Solutions and Networks Oy
    Inventors: Po Dong, Kwangwoong Kim, Argishti Melikyan
  • Patent number: 10636887
    Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: April 28, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu
  • Patent number: 10629842
    Abstract: A display device may include an organic light emitting device and an encapsulation structure provided on the organic light emitting device to seal the organic light emitting device. The encapsulation structure may include a first inorganic encapsulation layer provided on the organic light emitting device, an organic encapsulation layer provided on the first inorganic encapsulation layer, and a second inorganic encapsulation layer provided on the organic encapsulation layer. The first inorganic encapsulation layer may include a first inorganic layer provided on the organic light emitting device and a first plasma-treated layer provided on the first inorganic layer. The first plasma-treated layer may include an upper portion, in which a rugged structure is defined.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: April 21, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Cha-dong Kim, Bumsoo Kam, Hyunae Kim, Cheolho Park
  • Patent number: 10622415
    Abstract: A fingerprint recognition device and an OLED display device, which relate to the technical field of display and can solve the problems of a low recognition accuracy due to a large distance from a finger to a fingerprint recognition device. The fingerprint recognition device comprises recognition units alternately defined by a plurality of scanning lines and signal reading lines which are crisscrossed with each other. Each recognition unit is provided with a switching transistor and a photosensitive element. The photosensitive element comprises a photoelectric conversion layer and a collimator filter layer which are stacked successively. The collimator filter layer is used for irradiating incident light onto the photoelectric conversion layer in parallel, and the photoelectric conversion layer is used for performing photoelectric conversion on the incident light.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: April 14, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rui Xu, Haisheng Wang, Yingming Liu, Pengpeng Wang, Chih-Jen Cheng, Yunke Qin, Yuzhen Guo, Wei Liu
  • Patent number: 10622498
    Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: April 14, 2020
    Assignee: W&WSENS DEVICES, INC.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Patent number: 10615354
    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: April 7, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takkyun Ro, Kyung Bae Park, Ryuichi Satoh, Yong Wan Jin, Chul Joon Heo
  • Patent number: 10612139
    Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: April 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Maekawa, Takashi Sameshima, Shintaro Aoyama, Mikio Suzuki, Susumu Arima, Atsushi Matsumoto, Naoki Shibata
  • Patent number: 10601201
    Abstract: A vertical cavity surface emitting laser (VCSEL) array is provided. Each tunable VCSEL includes an output coupling mirror; a high reflectivity mirror; an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror; and a spacer layer disposed between the output coupling mirror and the active cavity material. A tuning cavity is defined within the spacer layer. Each VCSEL further includes a first contact pad and a second contact pad designed to receive a driving voltage; a tuning electrode on a first surface of the output coupling mirror for tuning the emission wavelength to a distinct wavelength.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: March 24, 2020
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Sylvie Rockman, Elad Mentovich
  • Patent number: 10586883
    Abstract: An energy storage capsule for storing energy in the form of photons. The body of the capsule may surround a sealed vacuum environment in which several layers of reactive material are contained, including an inner reflective coating, a first photovoltaic cell, an optical amplification medium, a second photovoltaic cell, and an outer reflective coating, provided in that order. The body of the capsule may also be reflective, for example polished aluminum. Light may be emitted from an LED wafer which may be integrated with the surface of the optical amplification medium, directed at the several layers of reactive material. Some photons may be reflected by the reflective material, storing them within the capsule, while others may be absorbed by the photovoltaic cells, powering the LEDs to transmit more photons. The thermal environment of the energy storage capsule may be maintained such that the LEDs can operate at over 100% efficiency.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: March 10, 2020
    Assignee: Quantum Photonics Corporation
    Inventor: Matthew Ryan Hankla
  • Patent number: 10580938
    Abstract: A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: March 3, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Jens Ebbecke, Petrus Sundgren, Roland Zeisel
  • Patent number: 10538862
    Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: January 21, 2020
    Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
  • Patent number: 10526723
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: January 7, 2020
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • Patent number: 10529955
    Abstract: A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: January 7, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Richard Baisl, Philipp Schwamb, Simon Schicktanz, Johannes Rosenberger
  • Patent number: 10520786
    Abstract: An electro-optic display having a viewing surface through which a user views the display, a bistable, non-electrochromic electro-optic medium, and at least one electrode arranged to apply an electric field to the electro-optic medium, the display further comprising at least 10 micromoles per square meter of the viewing surface of at least one compound having an oxidation potential more negative that about 150 mV with respect to a standard hydrogen electrode, as measured at pH 8, where the compound having the oxidation potential comprises one or more compounds of Formulae I below: where in Formulae I, R1-R4 may be substituted or unsubstituted alkyl or aryl groups, or heteroatomic groups containing hetero atoms of Groups V-VII of the periodic table, and substituents R1 and R2 (taken together), and/or R3 and R4, may form a ring.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: December 31, 2019
    Assignee: E Ink Corporation
    Inventors: Stephen J. Telfer, Peter Carsten Bailey Widger, Ana L. Lattes, Dan John Lauber
  • Patent number: 10510929
    Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: December 17, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Hwan Hee Jeong, Sang Youl Lee, June O. Song, Ji Hyung Moon, Kwang Ki Choi
  • Patent number: 10497835
    Abstract: A light emitting element according to one embodiment can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a light-transmitting ohmic layer on the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode on the light-transmitting ohmic layer. The light emitting element can include two first sides facing each other, and two second sides facing each other. The width of the first side is greater than the width of the second side, and the first side and the second side can be perpendicular to each other. The distance between the first branch electrode and the second branch electrode is ? to ½ of the width of the second side of either one thereof.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: December 3, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Se Yeon Jung
  • Patent number: 10475706
    Abstract: Electronic device fins may be formed by epitaxially growing a first layer of material on a substrate surface at a bottom of a trench formed between sidewalls of shallow trench isolation (STI) regions. The trench height may be at least 1.5 times its width, and the first layer may fill less than the trench height. Then a second layer of material may be epitaxially grown on the first layer in the trench and over top surfaces of the STI regions. The second layer may have a second width extending over the trench and over portions of top surfaces of the STI regions. The second layer may then be patterned and etched to form a pair of electronic device fins over portions of the top surfaces of the STI regions, proximate to the trench. This process may avoid crystaline defects in the fins due to lattice mismatch in the layer interfaces.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: November 12, 2019
    Assignee: Intel Corporation
    Inventors: Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le, Jack T. Kavalieros, Robert S. Chau, Ravi Pillarisetty
  • Patent number: 10446727
    Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: October 15, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
  • Patent number: 10439362
    Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: October 8, 2019
    Assignees: TOPGAN SP. Z O.O., INST. WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
    Inventors: Szymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin
  • Patent number: 10431660
    Abstract: Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: October 1, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu
  • Patent number: 10431456
    Abstract: An imprint method includes: applying a applying a material for forming a patterned layer having a pattern, to a substrate; feeding a stamp film including a stamp pattern corresponding to the pattern of the patterned layer, along a pressure roller and an idle roller; forming the patterned layer having the pattern, including: the pressure roller pressing the stamp film toward the material to contact the stamp pattern of the stamp film with the material layer, curing the material layer in contact with the stamp pattern, and moving the pressure roller and the idle roller to peel the stamp film off the cured material layer by a peeling force, to form the patterned layer having the pattern; and detecting a defect in the formed patterned layer, during the peeling of the stamp film, by sensing the peeling force in real time by a pressure sensor connected to the pressure roller.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: October 1, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Futoshi Yoshida
  • Patent number: 10420204
    Abstract: A method of making a wiring board having an electrical isolator and metal posts incorporated in a resin core is characterized by the provision of moisture inhibiting caps covering interfaces between the electrical isolator/metal posts and a surrounding plastic material. In a preferred embodiment, the electrical isolator and metal posts are bonded to the resin core by an adhesive substantially coplanar with the metal films on the electrical isolator, the metal posts and the metal layers on two opposite sides of the resin core at smoothed lapped top and bottom surfaces so that a metal bridge can be deposited on the adhesive at the smoothed lapped bottom surface to completely cover interfaces between the electrical isolator/metal posts and the surrounding plastic material. Conductive traces are also deposited on the smoothed lapped top surface to provide electrical contacts for chip connection and electrically coupled to the metal posts.
    Type: Grant
    Filed: September 7, 2015
    Date of Patent: September 17, 2019
    Assignee: BRIDGE SEMICONDUCTOR CORPORATION
    Inventors: Charles W. C. Lin, Chia-Chung Wang
  • Patent number: 10418412
    Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: September 17, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
  • Patent number: 10367141
    Abstract: The present disclosure relates to OLED and PV devices including transparent electrodes that are formed of conductive nanostructures and methods of improving light out-coupling in OLED and input-coupling in PV devices.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: July 30, 2019
    Assignee: Cambrios Film Solutions Corporation
    Inventor: Florian Pschenitzka
  • Patent number: 10361081
    Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: July 23, 2019
    Assignee: AXCELIS TECHNOLOGIES, INC.
    Inventors: Neil Colvin, Tseh-Jen Hsieh
  • Patent number: 10359672
    Abstract: A display device includes: a first substrate; a first electrode disposed on the first substrate; a liquid crystal layer disposed on the first electrode; a polarizing plate disposed on the liquid crystal layer; a color conversion layer disposed on the polarizing plate and including a plurality of color conversion portions; and a second substrate disposed on the color conversion layer. The polarizing plate includes a polymer film, and a distance between the liquid crystal layer and the color conversion layer is in a range of about 5 ?m to about 50 ?m.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: July 23, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seonggyu Kwon, Sangil Kim, Wontae Kim, Haksun Kim, Namseok Roh, Jaecheol Park, Youyoung Jin
  • Patent number: 10347793
    Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: July 9, 2019
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Lunev, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Patent number: 10347722
    Abstract: A material structure and system for generating a III-Nitride digital alloy.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: July 9, 2019
    Assignee: LEHIGH UNIVERSITY
    Inventors: Nelson Tansu, Wei Sun, Chee-Keong Tan
  • Patent number: 10333023
    Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: June 25, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Pun Jae Choi, Yu Seung Kim, Jin Bock Lee
  • Patent number: 10319875
    Abstract: Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: June 11, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Kevin Tetz, Charles M. Watkins
  • Patent number: 10311834
    Abstract: A motor vehicle includes a display device designed for depicting objects, a computing device for controlling the display device, and a stowage unit in which a first end region of the display device is inserted. In a stowage position of the display device, the entire display device is inserted in the stowage unit, and, starting from the stowage position, a useful region of the display device is extendable out of the stowage unit by a predeterminable use distance. The display device is lockable at different length values of the use distance, and therefore a plurality of different use positions results, and the computing device is designed to adjust the depiction of the objects depending on the current length value of the use distance.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: June 4, 2019
    Assignee: AUDI AG
    Inventor: Matthias Wunderlich
  • Patent number: 10302958
    Abstract: The present disclosure discloses a display apparatus, a stereoscopic display apparatus, and an application terminal thereof. The display apparatus includes a display panel and a light collimation module. The display panel includes an RGB pixel array. The RGB pixel array includes multiple RGB pixels disposed at intervals. The light collimation module includes a control electrode layer, a first transparent substrate, a liquid crystal layer, and a second transparent substrate. The control electrode layer is disposed within the intervals between the RGB pixels or at positions that are on the display panel and that are corresponding to the intervals between the RGB pixels. The first transparent substrate is disposed on the display panel and covers the control electrode. The liquid crystal layer is disposed on the first transparent substrate. The second transparent substrate is disposed on the liquid crystal layer.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: May 28, 2019
    Assignees: Huawei Technologies Co., Ltd., Cambridge Enterprise Limited
    Inventors: Jiong Zhou, Kun Li, Daping Chu
  • Patent number: 10283673
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first semiconductor layer, a second semiconductor layer on the active layer, and an electrode layer on the second semiconductor layer. A top surface of a first barrier layer adjacent to the second semiconductor layer includes an uneven surface and has a larger area than an area of a top surface of a second barrier layer, wherein the first barrier layer has a thickness thicker than a thickness of the second barrier layer.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: May 7, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventors: Oh Min Kwon, Jong Pil Jeong
  • Patent number: 10270067
    Abstract: The present disclosure discloses an AMOLED display panel manufacturing method, apparatus and system. The method comprises: collecting size parameters of a substrate, constructing an AMOLED display panel model based on the size parameters, and determining spray data of respective organic vapor materials; controlling corresponding spraying devices to spray the respective organic vapor materials on the substrate successively according to the determined spray data of the respective organic vapor materials, to form an AMOLED display panel.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: April 23, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Guoping Qian, Yangkun Jing, Chengye Wu, Bei Wang
  • Patent number: 10249846
    Abstract: The present invention provides an OLED packaging method and an OLED package structure. The OLED packaging method of the present invention is such that a silicon-doped diamond-like carbon layer and a diamond-like carbon scattering layer are both provided in an OLED package structure so that the silicon-doped diamond-like carbon layer may provide an effect of blocking external moisture and oxygen and the diamond-like carbon scattering layer is used to provide an effect of increasing light transmission rate, whereby it is possible to greatly extend the service life of the OLED device and also to ensure a relatively high light output efficiency of the OLED device.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: April 2, 2019
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiangjiang Jin, Hsianglun Hsu
  • Patent number: 10244589
    Abstract: The invention provides a micro LED display panel, with sub-pixel area (2) disposed with a micro LED (3) of a size smaller than the size of the sub-pixel area (2), and using a reflective lens layer (5) disposed below the micro LED (3) to reflect the light emitted by micro LED (3) to the area surrounding the micro LED (3) inside the sub-pixel area (2), and thereby expanding the illuminating area inside the sub-pixel area (2) to enhance the display quality and reduce cost.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: March 26, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Lixuan Chen
  • Patent number: 10236410
    Abstract: A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: March 19, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wenhao Liu, Craig Breen, Seth Coe-Sullivan
  • Patent number: 10234629
    Abstract: A semiconductor device and a method for producing a semiconductor device are disclosed. The semiconductor device includes a first silicon layer; a first dielectric layer, located on the first silicon layer, where the first dielectric layer includes a window, and a bottom horizontal size of the window of the first dielectric layer is not greater than 20 nm; and a III-V semiconductor layer, located on the first dielectric layer and in the window of the first dielectric layer, and connected to the first silicon layer in the window of the first dielectric layer. A III-V semiconductor material of the semiconductor device has no threading dislocations, and therefore has relatively high performance.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: March 19, 2019
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventor: Yourui Huangfu
  • Patent number: 10199799
    Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: February 5, 2019
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Noriyuki Futagawa, Shoichiro Izumi, Masaru Kuramoto
  • Patent number: 10192908
    Abstract: The present invention provides a TFT array manufacturing method of an optimized 4M production process.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: January 29, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Xiaodi Liu
  • Patent number: 10186647
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: January 22, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Tsen-Kuei Wang, Ming-Yung Jow, Bor-Cherng Chen, Tsung-Ta Yu
  • Patent number: 10147355
    Abstract: A pixel circuit includes a switching transistor whose conduction is controlled by a drive signal supplied to the control terminal, a drive wiring adapted to propagate the drive signal, and a data wiring adapted to propagate a data signal. A multi-layered wiring structure is used so that a second wiring layer is formed on a layer different from that on which a first wiring layer is formed.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: December 4, 2018
    Assignee: Sony Corporation
    Inventors: Tetsuo Minami, Yukihito Iida, Katsuhide Uchino
  • Patent number: 10141478
    Abstract: A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: November 27, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Hwan Hee Jeong, Kwang Ki Choi, June O Song, Sang Youl Lee