Abstract: A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.

Abstract: The pixel structure includes a scan line, a data line, a thin-film transistor, a first electrode layer, a protective layer and a second electrode layer. The thin-film transistor is electrically connected to the scan line and the data line, and includes a gate, an oxide semiconductor layer, an insulating layer, a source and a drain. The first electrode layer is in the same layer as the oxide semiconductor layer, and is surrounded by the scan line and the data line. The second electrode layer is located on the first electrode layer, and the protective layer is located between the first electrode layer and the second electrode layer, wherein one of the first and second electrode layers is electrically connected to the thin-film transistor, and the other is connected to a common voltage. The second electrode layer includes a plurality of slits exposing an area of the first electrode layer.

Abstract: A method of treating a surface includes providing an object and applying a masking layer to a target surface area of the object. A sacrificial material is applied to a non-target surface area of the object. The method also includes removing the masking layer from the target surface area. The target surface area is exposed to a substance that etches or coats the target surface area. The sacrificial material from the non-target surface area of the object is removed, leaving the target surface area of the object etched or coated by the substance while the non-target surface area is not etched or coated by the substance.

Abstract: A method of manufacturing an Organic Light Emitting Diode (OLED) pixel is disclosed. The method includes forming an anode and forming a pixel definition layer. The pixel definition layer includes a first sub-pixel area, a second sub-pixel area, a third sub-pixel area corresponding to the third sub-pixel, and a pixel spacing area. The first sub-pixel, the second sub-pixel and the third sub-pixel are separated from each other by the pixel spacing area. The method also includes coating a long-chain fatty acid ester layers on the pixel spacing area, the second sub-pixel area, and the third sub-pixel area, coating light emitting layers on the sub-pixel areas and on the long-chain fatty acid ester layers, and ashing the substrate and removing the long-chain fatty acid ester layers to form light emitting patterns. The method also includes forming a cathode.

Abstract: The disclosure provides a cleaning agent composition for a flat panel display device, including: polyaminocarboxylic acid; alkali base; a nonionic surfactant; and a fluoride component. The cleaning agent composition for the flat panel display device can effectively remove metal oxides and organic contaminants on the substrate without impairing a transparent conductive layer.

Abstract: A display unit includes: an organic light emitting element including a first electrode, an organic layer, and a second electrode in order, the organic layer including a conductive layer; and an auxiliary electrode configured to be electrically connected to the second electrode via the conductive layer in the organic layer.

Abstract: A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the semiconductor layer and separated from each other, and the gate insulating layer includes a fluorinated silicon oxide (SiOF) layer, and the gate electrode, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor, and a threshold voltage shift value of the thin film transistor is substantially less than 4.9 V.

Abstract: A manufacturing method of a display device of the invention includes a step of forming an organic layer in correspondence with respective pixels on a substrate having a display area and a non-display area, the step of forming the organic layer includes a step of depositing a material of the organic layer using a mask having a frame-like frame and a mask foil fixed to the frame, the mask foil has openings provided in an area corresponding to the display area and dummy holes provided along an outer periphery of the area corresponding to the display area in an area corresponding to the non-display area, and an area of a plan view shape of the dummy hole adjacent to a midpoint of a side of the outer periphery is larger than an area of a plan view shape of the dummy hole adjacent to a corner of the outer periphery.

Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of

Abstract: An organic light emitting diode display panel is disclosed, which comprises: a first substrate having a first edge, a second edge, a third edge opposite to the first edge, and a fourth edge opposite to the second edge; a second substrate opposite to the first substrate; an organic light emitting diode unit disposed on the second substrate; a fit unit disposed between the first substrate and the second substrate and surrounding the organic light emitting diode unit; and a buffer unit disposed between the first substrate and the second substrate and between the frit unit facing to the first edge of the first substrate and the first edge thereof, wherein the buffer unit has a first end with a first cutting edge connecting to the second edge. In addition, the present invention also provides a method for manufacturing the same.

Abstract: A method of manufacturing a display device including providing a substrate, forming a semiconductor layer on the substrate, forming a first insulating layer on the semiconductor layer, forming a metal layer on the first insulating layer, forming a second insulating layer on the metal layer, forming an etching buffer layer on the second insulating layer, forming a photosensitive film pattern on the etching buffer layer, and etching the etching buffer layer and the first and second insulating layers to expose the semiconductor layer.

Abstract: Pixels of a display device include a first substrate, an organic insulation layer disposed on the first substrate and having an upper surface formed in an uneven structure, an inorganic insulation layer disposed on the organic insulation layer and formed in the uneven structure, a first electrode disposed on the inorganic insulation layer and formed in the uneven structure, and a device to provide a data voltage to the first electrode, in which the first electrode includes a reflective electrode to reflect incident light.

Abstract: An organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes an organic light-emitting device in which a pixel electrode, an intermediate layer that includes an emissive layer, and a cathode electrode are sequentially stacked. The cathode contact unit includes a cathode bus line that is formed on the same layer as the pixel electrode and contacts the cathode electrode, a first auxiliary electrode that is formed on the cathode bus line along an edge area of the cathode bus line, and a second auxiliary electrode that contacts the first auxiliary electrode.

Abstract: A deposition apparatus includes (i) a sheet including a slit area, first and second dummy slit areas, and a binding area; and (ii) a frame. The slit area has a plurality of patterning slits that are extended along a first direction and arranged along a second direction crossing the first direction. The first and second dummy slit areas are outside the slit area along the second direction and along the opposite direction to the second direction respectively and have a plurality of dummy slits. The binding area surrounds the slit area and the first and second dummy slit areas. The frame is attached to the binding area of the sheet and shields at least some of the plurality of dummy slits of the first and second dummy slit areas.

Abstract: An organic light-emitting element including: a substrate; a light-emitting part above the substrate, the light-emitting part including an organic layer; and banks defining bounds of the organic layer in a direction along a main surface of the substrate. In the organic light-emitting element, in plan view, a surface of the organic layer is longer in a first direction than in a second direction perpendicular to the first direction, and in the second direction, the surface of the organic layer is convex, protruding upwards in a thickness direction of the organic layer, and in the first direction, the surface of the organic layer is concave, protruding downwards in the thickness direction.

Abstract: A method according to embodiments of the invention includes providing a wafer comprising a semiconductor structure grown on a growth substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. The wafer includes trenches defining individual semiconductor devices. The trenches extend through an entire thickness of the semiconductor structure to reveal the growth substrate. The method further includes forming a thick conductive layer on the semiconductor structure. The thick conductive layer is configured to support the semiconductor structure when the growth substrate is removed. The method further includes removing the growth substrate.

Abstract: An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode. The substrate has a first and a second surface opposite to each other. The light-absorption layer is disposed on the first surface, and has at least one opening exposing a portion of the first surface. The active array structure is positioned on the second surface, and includes at least one data line, at least one gate line, and at least one switching device electrically connected to the gate and data lines. The light-absorption layer overlaps at least one of the data line and the gate line when viewed in a direction perpendicular to the substrate. The organic light-emitting diode is electrically connected to the switching device, and the organic light-emitting diode overlaps the opening when viewed in the direction perpendicular to the substrate.

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

Abstract: An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.

Abstract: Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part.

Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: A display device having a substrate including a first display area, a second display area, a non-display area disposed adjacent to the first and second display areas, a plurality of first pixels disposed in the first display area, a plurality of second pixels disposed in the second display area, a first groove disposed in the non-display area and recessed downward from an upper surface of the substrate, a first flexible film disposed in the first groove, and a plurality of pad electrodes disposed on the first flexible film in the non-display area between the first and second display areas and connecting the first pixels are connected to the second pixels in a row.

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support having a support top side, a semiconductor layer sequence having an active layer for generating electromagnetic radiation, wherein the active layer is located between an n-type n-layer and a p-type p-layer of the semiconductor layer sequence, wherein the semiconductor layer sequence, as seen in a plan view of the support top side, is patterned into emitter regions arranged next to one another and electrical conductor tracks located on a side of the semiconductor layer sequence facing away from the support, where the electrical conductor tracks include contact surfaces. The chip further includes an n-contact point and a p-contact point for electrically contacting the semiconductor chip, wherein the emitter regions are electrically connected in series via the at least two conductor tracks.

Abstract: An organic light emitting diode display device is disclosed. The organic light emitting diode display device includes: an element substrate configured to include a plurality of pixel regions; a first passivation layer formed on the element substrate; an organic light emitting diode which includes a first electrode formed on the first passivation layer, a first insulation film formed on the first passivation layer with the first electrode and configured to define an emission region, and an organic layer and a second electrode formed on the first insulation film; a first fixed layer formed on the first passivation layer under an edge of the insulation film and configured to prevent a direct contact of the first passivation layer and the edge of the first insulation film; and a second passivation layer formed on the organic light emitting diode.

Abstract: An organic light-emitting display device includes a substrate including a rectangular light-emitting area and a circuit area, the circuit area including a thin film transistor, the light-emitting area including an electroluminescent layer produced by a solution deposition process, the light-emitting area being bounded by a first major side, a second major side, a first minor side and a second minor side, the first major side being opposite from and parallel to a second major side, each of these sides having wiring or dummies arranged thereat, and a pixel defining layer arranged on the wirings and on the dummies. In order to produce a uniform thickness electroluminescent layer via a solution deposition process, top surfaces of the pixel defining layer on each of the wirings and dummies that border the light emitting area are arranged in a same plane that is parallel to the substrate.

Abstract: Provided is an organic electroluminescence element that eliminates uneven light emission and changes a light emitting pattern. The organic electroluminescence element including: a supporting substrate; a first electrode; N sets of light emitting units including one or more organic functional layers, where N represents an integer of 2 or more; and one or more (N?1) sets of intermediate metal layers with optical transparency, each disposed between the adjacent light emitting units; and a second electrode. Herein, at least one organic functional layer of each light emitting unit is a layer subjected to patterning using a mask during formation of the organic functional layer, a layer subjected to patterning via light irradiation after formation of the organic functional layer, or a layer subjected to patterning using a mask during formation of the organic functional layer and further subjected to patterning via light irradiation after the formation of the organic functional layer.

Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed.

Abstract: A light emitting system and related method are disclosed.

Abstract: A method for producing a substrate having an irregular concave and convex surface for scattering light includes: manufacturing a substrate having the irregular concave and convex surface; irradiating the concave and convex surface of the manufactured substrate with inspection light from a direction oblique to a normal direction and detecting returning light of the inspection light returned from the concave and convex surface by a light-receiving element provided in the normal direction of the concave and convex surface; and judging unevenness of luminance of the concave and convex surface by an image processing device based on light intensity of the returning light received. An organic EL element which includes a diffraction-grating substrate having an irregular concave and convex surface is produced with a high throughput.

Abstract: A manufacturing method of a display device includes: forming a thin film transistor on a substrate, forming a pixel electrode connected to the thin film transistor, and forming a common electrode insulated from the pixel electrode. At least one of forming the pixel electrode and forming the common electrode includes: forming an electrode layer on the substrate, coating a photoresist on the electrode layer to form a first electrode sub-layer on which the photoresist is coated and a second electrode sub-layer on which the photoresist is not coated, generating etching vapor by heating an etching solution in a double boiler, and etching the second electrode sub-layer by using the etching vapor.

Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a lower substrate including a display area and a non-display area surrounding the display area, wherein a plurality of pixels are formed in the display area. The OLED display also includes an embedded circuit formed in the configured to apply a plurality of signals to the pixels, and an initialization wiring formed in the non-display area and configured to apply an initialization voltage to each of the pixels. The initialization circuit is formed in a layer so as to at least partially overlap with the area of the embedded circuit.

Abstract: A thin film deposition apparatus, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method. A thin film deposition apparatus for forming a thin film on a substrate includes a first chamber in a vacuum state; first and second stages arranged in parallel in the first chamber wherein the substrate is fixable to at least one of the first and second stages; a mask contactable with the substrate; and a first deposition source and a second deposition source that are movable relative to the first and second stages and are configured to discharge a deposition material onto the substrate.

Abstract: The invention relates to a method for producing serially interconnected optoelectronic components as well as optoelectronic components interconnected according to the method. In a first step, an electrically non-conductive layer with optoelectronic material introduced therein and at least one first wire or thread (2) located in the layer is produced. The first wire or thread either is electrically conductive from the outset or can subsequently be treated in such a way that it becomes electrically conductive as a result of the treatment. A first and second electrooptically active region of the layer is electrically connected to the first wire or thread in such a way that they are electrically interconnected to each other in series. By the wire, regions of the layer are subdivided in a simple manner, as a result of which a plurality of optoelectronic components are produced in a technically simple manner. Continuous production is possible.

Abstract: A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.

Abstract: The invention discloses a touch detecting structure, an organic light emitting touch display device, a method of detecting a touch on a device and a method of manufacturing a device. The touch detecting structure includes: a first signal transmission line arranged on a first substrate of an organic light emitting touch display device; an insulating layer arranged on the first signal transmission line and having a via hole and a protrusion; a second signal transmission line located on the insulating layer and passing the top of the protrusion; a signal transmission terminal arranged on the lateral surface of the protrusion and having one end connected with the first signal transmission line through the via hole and the other end located on the top of the protrusion, and insulated from the second signal transmission line; and a cathode film arranged on a second substrate.

Abstract: A circuit system includes: a first optoelectronic semiconductor component situated with an n-conductive surface facing an electrically conductive support surface and connected to the support surface in an electrically conductive manner; and a second optoelectronic semiconductor component situated with a p-conductive surface facing the support surface and connected to the support surface in an electrically conductive manner.

Abstract: A method of fabricating a display panel apparatus, includes forming a TFT layer, forming a planarizing film, forming a lower electrode, an electrode plate, and an auxiliary electrode, forming banks, forming the organic EL layer, and forming an upper electrode. The electrode plate has an opening exposing a portion of a surface of the planarizing film. In at least one of the forming of the lower electrode, the electrode plate and the auxiliary electrode, and the forming of the banks, the opening of the electrode plate outgasses the planarizing film. The electrode plate has a power supply that receives current through the electrode plate. The opening extends in parallel with a side of the display near the opening. Current flowing between the power supply and a portion connecting the auxiliary electrode and the electrode plate flows along an extending direction of the opening.

Abstract: An optoelectronic module has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has a layer having a first conductivity, a layer having a second conductivity, a radiation surface and a contact surface which lies opposite the radiation surface. A contact is attached to the radiation surface. A frame made of a potting compound laterally encloses the semiconductor chip in at least some regions such that the radiation surface and the contact surface are substantially free of the potting compound. A first contact structure is arranged in at least some regions on the frame and in at least some regions on the contact surface. A second contact structure is arranged in at least some regions on the frame and in at least some regions on the contact of the radiation surface.

Abstract: There is provided a display device (100) including a step forming member (14) which forms a step between a first region (s1) and a second region (s2) over a substrate (11) so that the first region (s1, 173R) becomes higher than the second region (s2, 173G) when viewed from the substrate (11), a first light emitting (173R) layer transferred to the first region, and a second light emitting layer (173G) transferred to the first region and the second region, and which has an emission wavelength shorter than an emission wavelength of the first light emitting layer.

Abstract: An organic light emitting diode display device capable of improving capacitance Cst of a storage capacitor and transmittance and a method of fabricating the same are disclosed. The organic light emitting diode display device includes a driving thin film transistor (TFT) formed on the substrate, a passivation film formed to cover the TFT driver, a color filter formed on the passivation film in a luminescent region, a planarization film formed to cover the color filter, a transparent metal layer formed on the planarization film, an insulating film formed on the transparent metal layer, a first electrode connected to the TFT driver and overlapping the transparent metal layer while interposing the insulating film therebetween, an organic light emitting layer and a second electrode which are sequentially formed on the first electrode. The transparent metal layer, the insulating film, and the first electrode constitute a storage capacitor in the luminescent region.

Abstract: The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using an inkjet printing or thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein at least one of the charge injection or charge transport layers is formed by an inkjet printing or thermal printing method at a high deposition rate. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. An OLED microcavity is also provided and can be formed by one of more of the methods.

Abstract: An organic light-emitting display apparatus includes a buffer layer that is on a substrate and includes nanoparticles including nickel (Ni), a pixel electrode on the buffer layer, an organic emission layer on the pixel electrode, and an opposite electrode on the organic emission layer. A method of manufacturing the organic light-emitting display apparatus is provided.

Abstract: Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming an opening in the inorganic layer for exposing a part of the substrate; forming a metal layer on the inorganic layer, the metal layer including two metal wires respectively positioned at two sides of the opening; forming an organic layer on the two metal wires of the metal layer; and forming an indium tin oxide layer on the organic layer. The present invention can ensure that the short circuit does not occur between the metal wires by forming the opening in the inorganic layer.

Abstract: A organic light emitting diode display including an organic light emitting display panel displaying an image, and a lower passivation film attached to a bottom of the organic light emitting panel and including a polymer resin and an antistatic agent, wherein the lower passivation film includes a plurality of stress adjustment patterns disposed to be adjacent to each other wherein decreasing the bending interval between the bending stress adjustment patterns formed at the lower passivation film processed with the antistatic agent and attached at the position corresponding to the bending portion of the organic light emitting panel, thereby selectively minimizes the stress of the bending portion of the organic light emitting panel, therefore, asymmetry of strains of the bending portions of the organic light emitting display panel can be prevented to remove a picture abnormality, and static electricity may be prevented.

Abstract: A light-emitting panel includes: a substrate and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels.

Abstract: A method of manufacturing a photo-alignment layer, includes: disposing a polymer material on a substrate; pre-baking the polymer material disposed on the substrate; irradiating a light to the pre-baked polymer material, to photo-align the pre-baked polymer material; and thermal-treating the irradiated pre-baked polymer material, to harden the irradiated pre-baked polymer material. The thermal-treating includes a first thermal-treatment, and a second thermal-treatment at a higher temperature than the first thermal-treatment.