Abstract: A grating structure has a plurality of grating members that extend upward from a base in a spaced-apart parallel relationship and include an end member. For example, the grating structure is a plurality of semiconductor fins on a base. The base can be any structure underlying the grating members. The grating members have a member width and a member height. Adjacent grating members are spaced by a grating spacing. A process artifact is adjacent the end member and is spaced from the end member by a horizontal distance consistent with the member spacing. In some cases, the process artifact can be a stub of a second material on or otherwise extending from the base adjacent an end member of the grating structure. In other cases, the process artifact can be a recess in or otherwise extending into the base adjacent an end member of the grating structure.

Abstract: A method includes forming a crown structure over a substrate; forming fins in the crown structure; forming an intra-device isolation region between the fins and forming inter-device isolation regions on opposing sides of the crown structure; forming a gate structure over the fins; forming a dielectric layer that extends continuously over the inter-device isolation regions, the fins and the intra-device isolation region; performing an etching process to reduce a thickness of the dielectric layer, where after the etching process, upper surfaces of the inter-device isolation regions and upper surfaces of the fins are exposed while an upper surface of the intra-device isolation region is covered by a remaining portion of the dielectric layer; and forming an epitaxial structure over the exposed upper surfaces of the fins, where after the epitaxial structure is formed, there is a void between the epitaxial structure and the intra-device isolation region.

Abstract: A method for forming a semiconductor device includes: forming a plurality of fins from a substrate; removing at least one fin to form at least a first group of fins; conformally depositing a first insulating material layer on the first group of fins and the substrate; forming a second insulator over the first insulating material layer; removing the second insulator to reveal the tops of the first group of fins; removing the first insulating material layer between the fins and the second insulating material; forming a dielectric layer over the fins; and forming a work function metal over the dielectric layer.

Abstract: A method includes forming a first hard mask over a semiconductor substrate, etching the semiconductor substrate to form recesses, with a semiconductor strip located between two neighboring ones of the recesses, forming a second hard mask on sidewalls of the semiconductor strip, performing a first anisotropic etch on the second hard mask to remove horizontal portions of the second hard mask, and performing a second anisotropic etch on the semiconductor substrate using the first hard mask and vertical portions of the second hard mask as an etching mask to extend the recesses down. The method further includes removing the vertical portions of the second hard mask, and forming isolation regions in the recesses. The isolation regions are recessed, and a portion of the semiconductor strip between the isolation regions protrudes higher than the isolation regions to form a semiconductor fin.

Abstract: A FinFET device and a method of forming the same are provided. A method includes forming a fin over a substrate. An isolation region is formed adjacent the fin. A dummy gate structure is formed over the fin. The fin adjacent the dummy gate structure is recessed to form a first recess. The first recess has a U-shaped bottom surface. The U-shaped bottom surface is below a top surface of the isolation region. The first recess is reshaped to form a reshaped first recess. The reshaped first recess has a V-shaped bottom surface. At least a portion of the V-shaped bottom surface comprises one or more steps. A source/drain region is epitaxially grown in the reshaped first recess.

Abstract: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

Abstract: A semiconductor device includes a substrate, at least one first isolation structure, at least two second isolation structure, and an epitaxy structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor fins are disposed between the second isolation structures, and the second isolation structures extend into the substrate further than the first isolation structure. The epitaxy structure is disposed on the semiconductor fins. At least one void is present between the first isolation structure and the epitaxy structure.

Abstract: A method of forming a semiconductor device that includes providing a first set of fin structures having a first pitch, and a second set of fin structure having a second pitch, wherein the second pitch is greater than the first pitch. An epitaxial semiconductor material on the first and second set of fin structures. The epitaxial semiconductor material on the first fin structures is merging epitaxial material and the epitaxial material on the second fin structures is non-merging epitaxial material. A dielectric liner is formed atop the epitaxial semiconductor material that is present on the first and second sets of fin structures. The dielectric liner is removed from a portion of the non-merging epitaxial material that is present on the second set of fin structures. A bridging epitaxial semiconductor material is formed on exposed surfaces of the non-merging epitaxial material.

Abstract: A semiconductor device includes a semiconductor substrate having a top surface, and at least one coated fin protruding perpendicularly from the surface and having a height h and side walls. The at least one coated fin further includes a core of one or more layers selected from the group consisting of (a) III-V compound layers and (b) a Ge layer, and a coating overlaying the core. The coating includes one or more metal oxide layers, at least one of which is aluminium. The device also includes a recess surrounding the at least one coated fin and being defined between two coated fins when more than one fin is present. The recess is filled up with a dielectric material so as to cover the coating on the side walls of the at least one fin up to a certain height h?, which is less than the height h. The present disclosure also relates to a method for producing the semiconductor device.

Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

Abstract: A method of forming a semiconductor structure within a semiconductor substrate is provided. The method may include forming, on the substrate, a first group of fins associated with a first device; a second group of fins associated with a second device; and a third group of fins located between the first group of fins and the second group of fins, whereby the third group of fins are associated with a third device. A shallow trench isolation (STI) region is formed between the first and the second group of fins by recessing the third group of fins into an opening within the substrate, such that the recessed third group of fins includes a fin top surface that is located below a top surface of the substrate. The top surface of the substrate is substantially coplanar with a fin bottom surface corresponding to the first and second group of fins.

Abstract: A finFET block architecture includes a first set of semiconductor fins having a first conductivity type, and a second set of semiconductor fins having a second conductivity type. An inter-block insulator is placed between outer fins of the first and second sets. A patterned gate conductor layer includes a first plurality of gate traces extending across the set of fins in the first block without crossing the inter-block insulator, and a second plurality of gate traces extending across the set of fins in the second block without crossing the inter-block insulator. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and include an inter-block connector arranged to connect gate traces in the first and second blocks.

Abstract: A method for fabricating a field effect transistor (FET) device includes forming a plurality of semiconductor fins on a substrate, removing a semiconductor fin of the plurality of semiconductor fins from a portion of the substrate, forming an isolation fin that includes a dielectric material on the substrate on the portion of the substrate, and forming a gate stack over the plurality of semiconductor fins and the isolation fin.

Abstract: A method of etching a silicon substrate includes providing a silicon substrate including a first surface and a second surface. A plurality of grooves spaced apart from each other are etched from the first surface of the silicon substrate. A dielectric material is deposited on the first surface of the silicon substrate and into the plurality of grooves. A hole through the silicon substrate is etched from the second surface of the substrate to the dielectric material. A portion of the hole is located between the plurality of grooves.

Abstract: Semiconductor devices having a bipolar transistor, a CMOS transistor, a drain extension MOS transistor and a double diffused MOS transistor are provided. The semiconductor device includes a semiconductor substrate including a logic region in which a logic device is formed and a high voltage region in which a high power device is formed, trenches in the semiconductor substrate, isolation layers in respective ones of the trenches, and at least one field insulation layer disposed at a surface of the semiconductor substrate in the high voltage region. Related methods are also provided.

Abstract: A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.

Abstract: A method, and an apparatus formed thereby, to construct shallow recessed wells on top of exposed conductive vias on the surface of a semiconductor. The shallow recessed wells are subsequently filled with a conductive cap layer, such as a tantalum nitride (TaN) layer, to prevent or reduce oxidation which may otherwise occur naturally when exposed to air, or possibly occur during an under-bump metallization process.

Abstract: In a manufacturing method of a semiconductor device, a first insulating film covering a ferroelectric capacitor is formed, and a first opening that has a relatively large diameter and reaches an electrode of the ferroelectric capacitor is formed in the first insulating film, and then recovery annealing of the ferroelectric capacitor is performed, and thereby, a path for oxygen can be secured in performing the recovery annealing, and the sufficient recovery annealing can be performed without causing problems during a manufacturing process.

Abstract: A process and resultant article of manufacture made by such process comprises forming through vias needed to connect a bottom device layer in a bottom silicon wafer to the one in the top device layer in a top silicon wafer comprising a silicon-on-insulator (SOI) wafer. Through vias are disposed in such a way that they extend from the middle of the line (MOL) interconnect of the top wafer to the buried oxide (BOX) layer of the SOI wafer with appropriate insulation provided to isolate them from the SOI device layer.

Abstract: Provided are a semiconductor device and a method of forming the semiconductor device. The semiconductor device includes an active region of which an edge is curved. The semiconductor device includes a gate insulating layer, a floating gate, a gate interlayer dielectric layer and a control gate line on the active region. The semiconductor device includes an oxide pattern having a concave top surface between adjacent floating gates. The control gate may be sufficiently spaced apart from the active region by the oxide pattern. The method can provide a semiconductor device that includes a reoxidation process, an active region having a curved edge and an oxide pattern having a top surface of a curved concave shape.

Abstract: A method of manufacturing a semiconductor device structure, such as a FinFET device structure, is provided. The method begins by providing a substrate comprising a bulk semiconductor material, a first conductive fin structure formed from the bulk semiconductor material, and a second conductive fin structure formed from the bulk semiconductor material. The first conductive fin structure and the second conductive fin structure are separated by a gap. Next, spacers are formed in the gap and adjacent to the first conductive fin structure and the second conductive fin structure. Thereafter, an etching step etches the bulk semiconductor material, using the spacers as an etch mask, to form an isolation trench in the bulk semiconductor material. A dielectric material is formed in the isolation trench, over the spacers, over the first conductive fin structure, and over the second conductive fin structure.

Abstract: A method of forming isolation layer in a semiconductor device, comprising forming a trench on an isolation region of a semiconductor substrate by etching utilizing an isolation mask; forming a first insulating layer on a lower portion of the trench; forming a second insulating layer on the semiconductor substrate including the first insulating layer; etching the second insulating layer to increase an aspect ratio on the isolation region; and forming a third insulating layer on a peripheral region of the second insulating layer to fill moats formed on the second insulating layer with the third insulating layer.

Abstract: Methods for fabricating a semiconductor device are disclosed. In an example, a method includes forming an isolation region on a substrate, wherein the isolation region extends a depth into the substrate from a substrate surface; forming a recess in the isolation region, wherein the recess is defined by a concave surface of the isolation region; and forming a first gate structure over the substrate surface and a second gate structure over the concave surface of the isolation region.

Abstract: A method for contacting an FET device is disclosed. The method includes vertically recessing the device isolation, which exposes a sidewall surface on both the source and the drain. Next, silicidation is performed, resulting in a silicide layer covering both the top surface and the sidewall surface of the source and the drain. Next, metallic contacts are applied in such manner that they engage the silicide layer on both its top and on its sidewall surface. A device characterized as being an FET device structure with enlarged contact areas is also disclosed. The device has a vertically recessed isolation, thereby having an exposed sidewall surface on both the source and the drain. A silicide layer is covering both the top surface and the sidewall surface of both the source and the drain. Metallic contacts to the device engage the silicide on its top surface and on its sidewall surface.

Abstract: A substrate may have active areas at different levels separated by a mask. Along the mask may be a shallow trench isolation. Along the shallow trench isolation may be a LOCOS isolation. The shape of a substrate transition region between the levels may be tunably controlled. The shallow trench isolation may reduce the bird's beak effect.

Abstract: A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate.

Abstract: A method of fabricating an extended drain MOS transistor which reduces a design rule and prevents the generation of leakage current. The method includes sequentially forming a diffusion film, a first conductive epitaxial layer, a gate oxide layer and a hard mask layer over a semiconductor substrate, forming a first hard mask pattern having a first thickness by performing a first etching process on the hard mask layer, forming a second hard mask pattern having a second thickness by performing a second etching process on the first hard mask layer, and then forming a thin gate oxide layer by performing a third etching process on the gate oxide layer using the second hard mask pattern as a mask.

Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.

Abstract: An exemplary method of patterning oxide layer and removing residual nitride includes steps of forming a first oxide layer, a nitride layer, a second oxide layer and a complex hard mask on a substrate in turn. The first oxide layer covers an insulating structure. The second oxide layer, the complex hard mask and the nitride layer are etched by utilizing a patterned photoresist as an etching mask, so as to expose the first oxide layer. In addition, the part of the nitride layer covering the insulating structure can be further removed. Accordingly, the present invention can effectively control layout patterns of material layers and doped regions and thereby can improve the performance of a narrow width device.

Abstract: A semiconductor device and a method of manufacturing the same. The method includes preparing a semiconductor substrate having high-voltage and low-voltage device regions, forming a field insulating layer in the high-voltage device region, forming a first gate oxide layer on the semiconductor substrate, exposing the semiconductor substrate in the low-voltage device region by etching part of the first gate oxide layer and also etching part of the field insulating layer to form a stepped field insulating layer, forming a second gate oxide layer on the first gate oxide layer in the high-voltage device region and on the exposed semiconductor substrate in the low-voltage device region, and forming a gate over the stepped field insulating layer and part of the second gate oxide layer in the high-voltage device region adjoining the field insulating layer.

Abstract: A method of manufacturing a semiconductor device structure, such as a FinFET device structure, is provided. The method begins by providing a substrate comprising a bulk semiconductor material, a first conductive fin structure formed from the bulk semiconductor material, and a second conductive fin structure formed from the bulk semiconductor material. The first conductive fin structure and the second conductive fin structure are separated by a gap. Next, spacers are formed in the gap and adjacent to the first conductive fin structure and the second conductive fin structure. Thereafter, an etching step etches the bulk semiconductor material, using the spacers as an etch mask, to form an isolation trench in the bulk semiconductor material. A dielectric material is formed in the isolation trench, over the spacers, over the first conductive fin structure, and over the second conductive fin structure.

Abstract: A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.

Abstract: First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.

Abstract: A design structure is provided for a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The device includes a first structure and a second structure. The first structure includes: a radiation hardened BOX layer under an active device layer; radiation hardened shallow trench isolation (STI) structures between active regions of the active device layer and above the radiation hardened BOX layer; metal interconnects in one or more interlevel dielectric layers above gates structures of the active regions. The second structure is bonded to the first structure. The second structure includes: a Si based substrate; a BOX layer on the substrate; a Si layer with active regions on the BOX; oxide filled STI structures between the active regions of the Si layer; and metal interconnects in one or more interlevel dielectric layers above gates structures. At least one metal interconnect is electrically connecting the first structure to the second structure.

Abstract: A method is provided for fabricating a semiconductor device and more particularly to a method of manufacturing a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The method includes removing a substrate from an SOI wafer and selectively removing a buried oxide layer formed as a layer between the SOI wafer and active regions of a device. The method further comprises selectively removing isolation oxide formed between the active regions, and replacing the removed buried oxide layer and the isolation oxide with radiation hardened insulators.

Abstract: In order to reduce an unevenness of a surface of a body, a sacrificial layer is applied to the surface, a chemical-mechanical polishing of the sacrificial layer and material of said body is performed to reduce the unevenness of the surface, and a remainder of the sacrificial layer, if any, may be removed.

Abstract: The present invention relates to device structures having backside contacts that extend from a back surface of a substrate through the substrate to electrically contact frontside semiconductor devices. The substrate preferably further includes one or more alignment structures located therein, each of which is sufficiently visible at the back surface of the substrate. In this manner, backside lithographic alignment can be carried out using such alignment structures to form at least one back contact opening in a patterned resist layer over the back surface of the substrate. The formed back contact opening is lithographically aligned with the front semiconductor device and can be etched to form a back contact via that extends from the back surface of the substrate onto the front semiconductor device. Filling of the back contact via with a conductive material results in a conductive back contact that electrically contacts the front semiconductor device.

Abstract: A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.

Abstract: A system for fabricating semiconductor components includes a semiconductor substrate, a thinning system for thinning the semiconductor substrate, an etching system for forming the substrate opening, and a bonding system for bonding the conductive interconnect to the substrate contact. The semiconductor component can be used to form module components, underfilled components, stacked components, and image sensor semiconductor components.

Abstract: A semiconductor device comprises a drift region of a first conduction type, a base region of a second conduction type, a source region of the first conduction type, a contact hole, a column region of the second conduction type, a plug and wiring. The drift region formed on a semiconductor substrate of the first conduction type. The base region of a second is formed in a prescribed region of the surface of the drift region. The source region is formed in a prescribed region of the surface of the base region. The contact hole extends from the source region surface side to the base region. The column region is formed in the drift region below the contact hole. The plug comprises a first conductive material and fills the contact hole. The wiring comprises a second conductive material and is electrically connected to the plug.

Abstract: A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least the dielectric film and the upper electrode; and forming a hydrogen barrier film that covers the silicon oxide film.

Abstract: A method is provided for fabricating a semiconductor device and more particularly to a method of manufacturing a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The method includes removing a substrate from an SOI wafer and selectively removing a buried oxide layer formed as a layer between the SOI wafer and active regions of a device. The method further comprises selectively removing isolation oxide formed between the active regions, and replacing the removed buried oxide layer and the isolation oxide with radiation hardened insulators.

Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.

Abstract: A method of manufacturing a semiconductor device structure, such as a FinFET device structure, is provided. The method begins by providing a substrate comprising a bulk semiconductor material, a first conductive fin structure formed from the bulk semiconductor material, and a second conductive fin structure formed from the bulk semiconductor material. The first conductive fin structure and the second conductive fin structure are separated by a gap. Next, spacers are formed in the gap and adjacent to the first conductive fin structure and the second conductive fin structure. Thereafter, an etching step etches the bulk semiconductor material, using the spacers as an etch mask, to form an isolation trench in the bulk semiconductor material. A dielectric material is formed in the isolation trench, over the spacers, over the first conductive fin structure, and over the second conductive fin structure.

Abstract: A pad oxide layer is formed on a substrate. A pad nitride layer is formed on the pad oxide layer. The pad nitride layer and the pad oxide layer are patterned. Predetermined portions of the substrate are etched using the pad nitride layer as an etch barrier to thereby form trenches used as device isolation regions. The trenches are filled with an insulation layer to thereby form device isolation regions. The pad nitride layer is removed. Recesses are formed by etching predetermined portions of the pad oxide layer and the substrate. The pad oxide layer is removed. A gate oxide layer is formed on the recesses and on the substrate. Gate structures of which bottom portions are buried in the recesses on the gate oxide layer are formed.

Abstract: In one embodiment, a memory cell includes a bit line arranged in a semiconductor substrate and a bit line contact region arranged adjacent the bit line. A word line is arranged above the bit line contact region in a trench formed in the semiconductor substrate. A generally U-shaped insulating layer is arranged in a bottom region of the trench and separates the bit line and the bit line contact region from the word line.

Abstract: A manufacturing method for a semiconductor-device isolation structure comprises providing a substrate with at least one shallow trench isolation structure, performing a salicide process that forms a recess on the surface of the shallow trench isolation structure, forming a cap film covering the substrate and filling the recess, performing an etching process to remove the cap film outside the recess, and forming a contact etch stop layer covering the substrate and filling the recess. Due to the filling recess with the cap film first, the contact etch stop layer covering the substrate and filling the recess does not have seams or voids.

Abstract: A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the semiconductor substrate having a transistor formation region and an element isolation region both defined thereon; forming a pad oxide film on the semiconductor layer of the semiconductor substrate; forming an oxidation-resistant mask layer on the pad oxide film; forming a resist mask to cover the transistor formation region on the oxidation-resistant mask layer; performing a first etching process for etching the oxidation-resistant mask layer using the resist mask as a mask to expose the pad oxide film of the element isolation region; and removing the resist mask and oxidizing the semiconductor layer below the exposed pad oxide film by LOCOS using the exposed oxidation-resistant mask layer as a mask to form an element isolation layer.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.

Abstract: The present invention provides a semiconductor device that reduces the junction leak current and achieves an improvement in the reliability of the gate oxide film by minimizing divot formation and the occurrence of a kink and a method of manufacturing such a semiconductor device. A pad oxide film and a silicon nitride film are formed on an Si substrate and a groove-like trench is formed through photolithography and etching. The liner oxide of the trench are oxidized through oxidizing/nitriding. Then, the trench is filled with an insulating film, the insulating film is planarized and the silicon nitride film and the pad oxide film are removed. Next, a field area is formed and a transistor is formed by following specific steps. By forming a trench liner oxide film containing nitrogen, stress is reduced.