By Electromagnetic Irradiation (e.g., Electron, Laser, Etc.) Patents (Class 438/463)
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Patent number: 10087550Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.Type: GrantFiled: May 16, 2017Date of Patent: October 2, 2018Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark P. D'Evelyn, Michael Ragan Krames
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Patent number: 10067288Abstract: The invention relates to a method and a device for producing at least one fiber Bragg grating in a waveguide, wherein the waveguide has at least one core having a first refractive index and the fiber Bragg grating contains a plurality of spatial regions which each occupy a partial volume of the core and have a second refractive index, wherein the spatial regions are each produced by the action of laser radiation on a partial volume of the core, wherein the laser radiation contains a plurality of pulse trains each containing a plurality of individual pulses, wherein the time interval between successive individual pulses is smaller than the time interval between successive pulse trains and the time interval between successive individual pulses is chosen between 10 ns and 100 ps or the pulse train has a duration of 50 fs to 50 ps.Type: GrantFiled: December 2, 2013Date of Patent: September 4, 2018Assignee: Fraunhofer Gesellschaft Zur Forderung Der Angew. Forschung E.V.Inventors: Wolfgang Schade, Jörg Burgmeier
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Patent number: 9935008Abstract: Disclosed herein is a semiconductor device chip manufacturing method including a chipping prevention layer forming step of forming a chipping prevention layer at each intersection of a plurality of crossing division lines formed on the front side of a wafer, a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer to the back side thereof along each division line in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a modified layer inside the wafer along each division line, and a dividing step of grinding the back side of the wafer after performing the modified layer forming step, thereby reducing the thickness of the wafer and also dividing the wafer into individual semiconductor device chips along each division line where the modified layer is formed as a break start point.Type: GrantFiled: June 26, 2017Date of Patent: April 3, 2018Assignee: Disco CorporationInventor: Toshiyuki Tateishi
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Patent number: 9905453Abstract: A protective sheeting for use in processing a semiconductor-sized wafer has a substantially circular base sheet and a substantially annular adhesive layer applied to a peripheral portion of a first surface of the base sheet. The inner diameter of the adhesive layer is smaller than the diameter of the wafer. Further, the outer diameter of the adhesive layer is larger than the inner diameter of an annular frame for holding the wafer. A related method includes attaching the protective sheeting to a front side or a back side of the wafer via the adhesive layer on the first surface of the base sheet so that an inner peripheral portion of the adhesive layer adheres to an outer peripheral portion of the front side or the back side of the wafer, and processing the wafer after the protective sheeting has been attached to the front side or the back side thereof.Type: GrantFiled: December 29, 2014Date of Patent: February 27, 2018Assignee: DISCO CorporationInventor: Karl Heinz Priewasser
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Patent number: 9828277Abstract: Methods and apparatus for separating substrates are disclosed, as are articles formed from the separated substrates. A method of separating a substrate having first and second surfaces includes directing a beam of laser light to pass through the first surface and, thereafter, to pass through the second surface. The beam of laser light has a beam waist located at a surface of the substrate or outside the substrate. Relative motion between the beam of laser light and the substrate is caused to scan a spot on a surface of the substrate to be scanned along a guide path. Portions of the substrate illuminated within the spot absorb light within the beam of laser light so that the substrate can be separated along the guide path.Type: GrantFiled: February 27, 2013Date of Patent: November 28, 2017Assignee: Electro Scientific Industries, Inc.Inventors: Haibin Zhang, Qian Xu
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Patent number: 9818911Abstract: A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.Type: GrantFiled: August 31, 2016Date of Patent: November 14, 2017Assignee: Sharp Kabushiki KaishaInventors: Hiroaki Yamamoto, Susumu Ohmi, Yufeng Weng, Kiminori Tanabe
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Patent number: 9779993Abstract: A method for dividing a wafer including: attaching a protective tape to a functional layer of the wafer with the adhesive layer of the tape in contact with the functional layer; and a wafer dividing step. The dividing step includes a cut groove forming step and a laser processing step. The cut groove forming step uses a blade to form a cut groove with a depth that does not reach the functional layer, resulting in part of the substrate being left along each division line. The laser processing step includes applying a laser beam to the part of the substrate left after the cut groove forming step and the functional layer of the wafer to form a laser processed groove having a depth reaching the tape. The tape is closely attached to the functional layer during the tape attaching step to prevent the adhesion of debris to the devices.Type: GrantFiled: October 14, 2015Date of Patent: October 3, 2017Assignee: DISCO CORPORATIONInventors: Yuki Ogawa, Kensuke Nagaoka, Tsubasa Obata, Yuri Ban
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Patent number: 9721791Abstract: According to an embodiment of a method of fabricating III-Nitride semiconductor dies, the method includes: growing a III-Nitride body over a group IV substrate in a semiconductor wafer; forming at least one device layer over the III-Nitride body; etching grid array trenches in the III-Nitride body and in the group IV substrate; forming an edge trench around a perimeter of the semiconductor wafer, the grid array trenches terminating inside the group IV substrate; and forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.Type: GrantFiled: November 4, 2016Date of Patent: August 1, 2017Assignee: Infineon Technologies Americas Corp.Inventor: Michael A. Briere
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Patent number: 9711934Abstract: A laser apparatus may include a first laser resonator configured to generate a laser beam, a first optical element configured to adjust a divergence in a first direction of the laser beam, a second optical element configured to adjust a divergence in a second direction of the laser beam, a measuring unit configured to measure the divergence in the first direction and the divergence in the second direction of the laser beam, and a controller configured to control one or both of the first optical element and the second optical element based on the divergence in the first direction and the divergence in the second direction of the laser beam both measured by the measuring unit.Type: GrantFiled: May 3, 2016Date of Patent: July 18, 2017Assignee: Gigaphoton Inc.Inventors: Osamu Wakabayashi, Takashi Matsunaga
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Patent number: 9701581Abstract: The invention relates to a method and apparatus for processing substrates, such as glass and semiconductor wafers. The method comprises directing to the substrate from a laser source a plurality of sequential focused laser pulses having a predetermined duration, pulsing frequency and focal spot diameter, the pulses being capable of locally melting the substrate, and moving the laser source and the substrate with respect to each other at a predetermined moving velocity so that a structurally modified zone is formed to the substrate. According to the invention, the pulse duration is in the range of 20-100 ps, pulsing frequency at least 1 MHz and moving velocity adjusted such that the distance between successive pulses is less than ? of the diameter of the focal spot. The invention can be utilized, for example, for efficient dicing, scribing and welding of materials which are normally transparent.Type: GrantFiled: June 4, 2009Date of Patent: July 11, 2017Assignee: Corelase OyInventors: Jarno Kangastupa, Tiina Amberla
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Patent number: 9698303Abstract: A light-emitting device is disclosed. The light-emitting diode device includes a substrate, comprising an upper surface, a lower surface and a plurality of side surfaces; and a semiconductor stack formed on the upper surface of the substrate; wherein the plurality of side surfaces comprises: a first region, adjacent to the upper surface and having a first surface roughness; a second region, comprising one or a plurality of textured areas substantially parallel to the upper surface and/or the lower surface in a side view, wherein the textured area is composed of a plurality of textured stripes and has a second surface roughness; and a third region, having a third surface roughness and being between the first region and the second region, and/or between the plurality of textured areas; wherein the first surface roughness is smaller than the second surface roughness, and the third surface roughness is smaller than the first surface roughness.Type: GrantFiled: July 10, 2015Date of Patent: July 4, 2017Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, De-Shan Kuo, Jhih-Jheng Yang, Jiun-Ru Huang, Jian-Huei Li, Ying-Chieh Chen, Zi-Jin Lin
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Patent number: 9620415Abstract: A wafer formed from an SiC substrate having a first surface and a second surface is divided into individual device chips. A division start point formed by a cutting blade has a depth corresponding to the finished thickness of each device chip along division lines formed on the first surface. A separation start point is formed by a laser beam having a focal point set inside the SiC substrate at a predetermined depth from the second surface, and the laser beam is applied to the second surface while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along a c-plane. An external force is applied to the wafer, thereby separating the wafer into a first wafer having the first surface and a second wafer having the second surface.Type: GrantFiled: August 15, 2016Date of Patent: April 11, 2017Assignee: Disco CorporationInventors: Kazuya Hirata, Yoko Nishino
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Patent number: 9536786Abstract: A wafer is formed with a plurality of division lines on a front surface of a single crystal substrate having an off angle and formed with devices in a plurality of regions partitioned by the division lines. The wafer is processed by setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal substrate falls within the range from 0.05 to 0.2. The pulsed laser beam is applied along the division lines, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal substrate.Type: GrantFiled: October 29, 2015Date of Patent: January 3, 2017Assignee: Disco CorporationInventors: Hiroshi Morikazu, Motohiko Shimada
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Patent number: 9496155Abstract: A method for selectively transferring active components (22) from a source substrate (20) to a destination substrate (10) includes providing a source substrate with one or more active components located on the source substrate, providing a destination substrate, locating a selectively curable adhesive layer (30) between and adjacent to the destination substrate and the source substrate, selecting one or more active components (22A), selectively curing area(s) (32A) of the adhesive layer corresponding to the selected active components to adhere the selected active components to the destination substrate, and removing the source substrate from the destination substrate leaving the selected active components adhered to the destination substrate in the selected areas.Type: GrantFiled: March 22, 2011Date of Patent: November 15, 2016Assignee: Semprius, Inc.Inventors: Etienne Menard, Joseph Carr
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Patent number: 9431299Abstract: A package substrate is divided into a plurality of device packages. An adhesive tape is attached to a back side of the substrate by cutting the substrate along a plurality of division lines formed on a front side of the substrate. The substrate includes a device portion partitioned into a plurality of device package regions by the division lines, and a marginal portion surrounding the device portion. A first ultraviolet light is applied to reduce the adhesive force of the adhesive tape in the marginal portion. The adhesive tape is partially peeled from the substrate in the marginal portion, and the substrate is cut along each division line by using a cutting blade to thereby divide the substrate into the device packages. In the dividing step, the marginal portion separated from the substrate is scattered by rotation of the cutting blade and thereby removed from the adhesive tape.Type: GrantFiled: November 11, 2015Date of Patent: August 30, 2016Assignee: Disco CorporationInventors: Hayato Kiuchi, Shigeya Kurimura
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Patent number: 9425084Abstract: Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.Type: GrantFiled: October 17, 2013Date of Patent: August 23, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Shyang Tsai, Wen-Han Tan, Wen-Lung Ho
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Patent number: 9330977Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a galvo scanner and linear stage hybrid motion laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits.Type: GrantFiled: January 5, 2015Date of Patent: May 3, 2016Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Brad Eaton, Ajay Kumar
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Patent number: 9324791Abstract: A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent ones of the processed portions.Type: GrantFiled: April 10, 2014Date of Patent: April 26, 2016Assignee: NICHIA CORPORATIONInventor: Hiroaki Tamemoto
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Patent number: 9275848Abstract: A method of processing an optical device wafer which includes a laser processing step of repeating an application of one pulse of a pulsed laser beam to the optical device wafer to form one laser processed hole, thereby forming a plurality of laser processed holes along streets; an etching step of causing an etchant to enter into the laser processed holes to etch the inside of the laser processed holes; and a dividing step of exerting an external force on the optical device wafer to divide the optical device wafer along the streets, thereby forming a plurality of optical devices.Type: GrantFiled: November 26, 2014Date of Patent: March 1, 2016Assignee: Disco CorporationInventor: Taro Arakawa
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Patent number: 9246124Abstract: Provided is a carrier for a flexible substrate which is capable of handling a flexible substrate during a flexible substrate processing process, while allowing the flexible substrate to be easily separated. Also provided is a substrate processing apparatus, including the carrier, and a method of manufacturing a flexible display apparatus. The carrier includes a substrate supporting portion having a top surface including a mounting surface, an outer circumferential surface, surrounding the mounting surface, and a first heat cutting portion. The first heat cutting portion is located outside the mounting surface so as to be exposed on the top surface and generates heat when a current flows through the first heat cutting portion.Type: GrantFiled: November 25, 2013Date of Patent: January 26, 2016Assignee: Samsung Display Co., Ltd.Inventor: Hayk Khachatryan
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Patent number: 9209591Abstract: A laser processing method of applying a pulsed laser beam to a single crystal substrate to thereby process the single crystal substrate. The laser processing method includes a numerical aperture setting step of setting the numerical aperture (NA) of a focusing lens for focusing the pulsed laser beam so that the value obtained by dividing the numerical aperture (NA) of the focusing lens by the refractive index (N) of the single crystal substrate falls within the range of 0.05 to 0.Type: GrantFiled: May 13, 2014Date of Patent: December 8, 2015Assignee: Disco CorporationInventors: Noboru Takeda, Hiroshi Morikazu
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Patent number: 9196536Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a phase modulated laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.Type: GrantFiled: September 25, 2014Date of Patent: November 24, 2015Assignee: Applied Materials, Inc.Inventors: Jungrae Park, Wei-Sheng Lei, James S. Papanu, Brad Eaton, Ajay Kumar
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Patent number: 9159631Abstract: A method of fabricating a composite semiconductor structure includes providing a first substrate comprising a first material and having a first surface and forming a plurality of pedestals extending to a predetermined height in a direction normal to the first surface. The method also includes attaching a plurality of elements comprising a second material to each of the plurality of pedestals, providing a second substrate having one or more structures disposed thereon, and aligning the first substrate and the second substrate. The method further includes joining the first substrate and the second substrate to form the composite substrate structure and removing at least a portion of the first substrate from the composite substrate structure.Type: GrantFiled: April 24, 2014Date of Patent: October 13, 2015Assignee: Skorpios Technologies, Inc.Inventor: Elton Marchena
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Patent number: 9093519Abstract: In a wafer processing method, the back side of the wafer is ground to reduce the thickness of the wafer to a predetermined thickness. A modified layer is formed by applying a laser beam to the wafer from the back side of the wafer along each division line with the focal point of the laser beam set inside the wafer. The wafer is mounted on a reinforcing sheet having an insulating function on the back side of the wafer and a dicing tape is attached to the reinforcing sheet. The peripheral portion of the dicing tape is supported by an annular frame. The wafer is heated, which also heats the reinforcing sheet, thereby hardening the reinforcing sheet. An external force is applied to the wafer to divide the wafer into individual devices along each division line and to also break the reinforcing sheet along the individual devices.Type: GrantFiled: October 1, 2014Date of Patent: July 28, 2015Assignee: Disco CorporationInventors: Yohei Yamashita, Kenji Furuta, Yoshiaki Yodo
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Patent number: 9082712Abstract: A device wafer has a plurality of devices individually formed in a plurality of separate regions on the front side of the wafer, the separate regions being defined by a plurality of crossing division lines. The wafer is processed by imaging the front side of the wafer to detect and store a target pattern, holding the front side of the wafer and grinding the back side of the wafer to thereby reduce the thickness to a predetermined thickness, imaging the front side of the wafer and next positioning the wafer with respect to a ring frame according to the target pattern stored so that the wafer is oriented to a predetermined direction, and attaching an adhesive tape to the back side of the wafer to thereby mount the wafer through the adhesive tape to the ring frame.Type: GrantFiled: September 9, 2014Date of Patent: July 14, 2015Assignee: Disco CorporationInventor: Kazuma Sekiya
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Patent number: 9076855Abstract: An object to be processed 1 is irradiated with laser light L along a line to cut 5a while locating a converging point within the object 1, so as to form a modified region 7a. Thereafter, the irradiation with the laser light L is performed again along the line 5a, so as to form a modified region 7b between a front face 3 and the first modified region 7a in the object 1 and generate a fracture Cb extending from the modified region 7b to the front face 3. Therefore, a deflecting force F1 occurring when forming the modified region 7a in the object 1 can be released and canceled out by the fracture Cb. As a result, the object 1 can be inhibited from deflecting.Type: GrantFiled: March 19, 2010Date of Patent: July 7, 2015Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Ryuji Sugiura
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Patent number: 9040389Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.Type: GrantFiled: October 9, 2012Date of Patent: May 26, 2015Assignee: Infineon Technologies AGInventors: Gunther Mackh, Maria Heidenblut, Adolf Koller, Anatoly Sotnikov
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Patent number: 9040345Abstract: A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface, implanting the diamond with a beam of 180 KeV followed by 150 KeV C+ ions at fluencies of 4×1015 ions/cm2 and 5×1015 ions/cm2 respectively, forming an electrically conducting carbon layer beneath the first carbon surface, and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface.Type: GrantFiled: March 13, 2013Date of Patent: May 26, 2015Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Bradford B. Pate, Matthew P. Ray, Jeffrey W. Baldwin
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Patent number: 9034733Abstract: In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer within the singulation lines using a pressurized fluid applied to the carrier tape.Type: GrantFiled: January 21, 2014Date of Patent: May 19, 2015Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: William F. Burghout, Dennis Lee Conner, Michael J. Seddon, Jay A. Yoder, Gordon M. Grivna
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Patent number: 9034731Abstract: An integrated, integrated circuit singulation system is provided including scribing a substrate using mechanical cutting or a plurality of passes of laser cutting, and dicing the substrate using mechanical cutting or laser cutting.Type: GrantFiled: September 16, 2005Date of Patent: May 19, 2015Assignee: STATS ChipPAC Ltd.Inventor: Seung Wook Park
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Patent number: 9034735Abstract: During the performance of a laser processing step of applying a laser beam to a wafer to form modified layers inside the wafer respectively along division lines, a predetermined one of the modified layers already formed is imaged by a camera from the back side of the wafer with predetermined timing, and a positional deviation of the predetermined modified layer from the corresponding division line is detected to calculate a correction value. Then, the correction value is added to data on applied position of the laser beam to thereby make the applied position of the laser beam coincide with each division line. Accordingly, a positional deviation of the modified layer to be formed after this correction from each division line can be suppressed.Type: GrantFiled: October 8, 2013Date of Patent: May 19, 2015Assignee: Disco CorporationInventors: Shigefumi Okada, Nobumori Ogoshi
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Patent number: 9035216Abstract: A laser processing device (100) comprises a laser light source (101) for emitting a laser light (L) and a laser light source controller (102) for controlling the pulse width of the laser light (L) and irradiates an object to be processed (1) with the laser light (L) while locating a converging point (P) within the object (1), so as to form a modified region along a line to cut (5) of the object (1) and generate a fracture extending in a thickness direction of the object (1) from the modified region as the modified region is formed. In the laser processing device (100), the laser light source controller (102) changes the pulse width of the laser light (L) according to a data table in which the fracture length, the thickness of the object (1), and the pulse width of the laser light (L) are associated with each other. That is, the pulse width is changed according to the fracture length generated from the modified region.Type: GrantFiled: March 29, 2010Date of Patent: May 19, 2015Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Ryuji Sugiura
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Patent number: 9029242Abstract: Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.Type: GrantFiled: June 15, 2011Date of Patent: May 12, 2015Assignee: Applied Materials, Inc.Inventors: James M. Holden, Nir Merry, Todd Egan
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Publication number: 20150126017Abstract: Methods for the ultrasonic cleaving of bonded wafer pairs include positioning the bonded wafer pair in a wafer holder disposed in a tank containing a volume of liquid and ultrasonically agitating the volume of liquid in the tank with an ultrasonic agitator. The ultrasonic agitation of the volume of liquid cleaves the bonded wafer pair into a handle wafer and a silicon-on-insulator wafer.Type: ApplicationFiled: January 15, 2015Publication date: May 7, 2015Inventor: Anca Stefanescu
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Publication number: 20150123264Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. The contact layer is disposed in the kerf region and the device regions. A structured solder layer is formed over the device regions. The contact layer is exposed at the kerf region after forming the structured solder layer. The contact layer and the substrate in the kerf regions are diced.Type: ApplicationFiled: November 1, 2013Publication date: May 7, 2015Inventors: Evelyn Napetschnig, Ulrike Fastner, Alexander Heinrich, Thomas Fischer
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Patent number: 9023717Abstract: To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.Type: GrantFiled: September 12, 2014Date of Patent: May 5, 2015Assignee: Renesas Electronics CorporationInventors: Kazuyuki Nakagawa, Shunichi Abe
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Patent number: 9018080Abstract: A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form a modified layer inside the wafer and a dividing step of applying an external force to the wafer to thereby divide the wafer into the individual chips along each street with the modified layer functioning as a division start point. In the modified layer forming step, the modified layer is formed at each intersection of the crossing streets at a height where cracking can be avoided on the corner edges of each chip obtained by dividing the wafer.Type: GrantFiled: September 30, 2013Date of Patent: April 28, 2015Assignee: Disco CorporationInventor: Kenji Furuta
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Publication number: 20150111365Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.Type: ApplicationFiled: December 31, 2014Publication date: April 23, 2015Inventors: Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA, Toshimitsu WAKUDA
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Publication number: 20150104931Abstract: An apparatus, device and method for wafer dicing is disclosed. In one example, the apparatus discloses: a wafer holding device having a first temperature; a die separation bar moveably coupled to the wafer holding device; and a cooling device coupled to the apparatus and having a second temperature which enables the die separation bar to fracture an attachment material in response to movement with respect to the wafer holding device. In another example, the method discloses: receiving a wafer having an attachment material applied to one side of the wafer; placing the wafer in a holding device having a first temperature; urging a die separation bar toward the wafer; and cooling the attachment material to a second temperature, which is lower than the first temperature, until the attachment material fractures in response to the urging.Type: ApplicationFiled: October 16, 2013Publication date: April 16, 2015Applicant: NXP B.V.Inventors: Martin Lapke, Hartmut Buenning, Sascha Moeller, Guido Albermann, Thomas Rohleder, Heiko Backer
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Patent number: 8999816Abstract: Approaches for protecting a wafer during plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer with a front surface having a plurality of integrated circuits thereon involves laminating a pre-patterned mask on the front surface of the semiconductor wafer. The pre-patterned mask covers the integrated circuits and exposes streets between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the streets to singulate the integrated circuits. The pre-patterned mask protects the integrated circuits during the plasma etching.Type: GrantFiled: April 18, 2014Date of Patent: April 7, 2015Assignee: Applied Materials, Inc.Inventors: James M. Holden, Aparna Iyer, Brad Eaton, Ajay Kumar
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Publication number: 20150079762Abstract: To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.Type: ApplicationFiled: September 12, 2014Publication date: March 19, 2015Inventors: Kazuyuki NAKAGAWA, Shunichi ABE
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Patent number: 8980727Abstract: Approaches for patterning semiconductor or other wafers and dies are described. For example, a method of patterning features within a substrate involves forming a mask layer above a surface of a semiconductor or glass substrate. The method also involves laser ablating the mask layer to provide a pattern of openings through the mask layer. The method also involves plasma etching portions of the semiconductor or glass substrate through the pattern of openings to provide a plurality of trenches in the semiconductor or glass substrate. The plurality of trenches has a pattern corresponding to the pattern of openings and comprising a pattern of through-substrate-via openings or redistribution layer (RDL) openings. The method also involves, subsequent to the plasma etching, removing the mask layer.Type: GrantFiled: May 7, 2014Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Brad Eaton, Ajay Kumar
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Patent number: 8980726Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a mask, patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps, and ablating through an entire thickness of a semiconductor substrate to singulate the IC. Following laser-based singulation, a plasma etch is performed to remove a layer of semiconductor sidewall damaged by the laser scribe process. In the exemplary embodiment, a femtosecond laser is utilized and a 1-3 ?m thick damage layer is removed with the plasma etch. Following the plasma etch, the mask is removed, rendering the singulated die suitable for assembly/packaging.Type: GrantFiled: January 17, 2014Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Aparna Iyer, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Patent number: 8980764Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.Type: GrantFiled: February 11, 2013Date of Patent: March 17, 2015Assignee: Plasma-Therm LLCInventors: Linnell Martinez, David Pays-Volard, Chris Johnson, David Johnson, Russell Westerman, Gordon M. Grivna
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Patent number: 8975163Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer comprising a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a layer covering and protecting the integrated circuits. The semiconductor wafer has a thickness. The method also involves laser scribing the mask and a majority of the thickness of the semiconductor wafer to provide scribe lines in the mask and the semiconductor wafer. The scribe lines are formed between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits.Type: GrantFiled: April 10, 2014Date of Patent: March 10, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, James S. Papanu, Brad Eaton, Ajay Kumar
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Patent number: 8975162Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside.Type: GrantFiled: December 3, 2013Date of Patent: March 10, 2015Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Brad Eaton, Aparna Iyer, Saravjeet Singh, Madhava Rao Yalamanchili, Ajay Kumar
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Patent number: 8969220Abstract: Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.Type: GrantFiled: December 14, 2012Date of Patent: March 3, 2015Assignee: IMRA America, Inc.Inventors: Alan Y. Arai, Gyu Cheon Cho, Jingzhou Xu
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Patent number: 8969177Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.Type: GrantFiled: June 13, 2013Date of Patent: March 3, 2015Assignee: Applied Materials, Inc.Inventors: Mohammad Kamruzzaman Chowdhury, Wei-Sheng Lei, Todd Egan, Brad Eaton, Madhava Rao Yalamanchili, Ajay Kumar
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Publication number: 20150056785Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: October 17, 2014Publication date: February 26, 2015Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Patent number: RE45403Abstract: A modified region 7 to become a starting point region for cutting is formed in a GaAs substrate 12 along a line to cut 5 upon radiation with laser light L which is pulsed laser light. As a consequence, the modified region 7 formed in the GaAs substrate 12 along the line to cut 5 is likely to generate fractures in the thickness direction of an object to be processed 1. Therefore, the modified region 7 having an extremely high function as a starting point region for cutting can be formed in the planar object to be processed 1 comprising the GaAs substrate 12.Type: GrantFiled: January 6, 2014Date of Patent: March 3, 2015Assignee: Hamamatsu Photonics K.K.Inventor: Masayoshi Kumagai