Having Cantilever Element Patents (Class 438/52)
  • Patent number: 10618802
    Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: April 14, 2020
    Assignee: International Business Machines Corporation
    Inventors: Anthony K. Stamper, John G. Twombly
  • Patent number: 10483416
    Abstract: A semiconducting microbolometer sensor for detecting electromagnetic waves in the medium wavelength infrared (MWIR) and long-wavelength infrared (LWIR) is provided. A preferred embodiment provides a substrate layer, a bottom and top support structure with a strut-based mesh design, a meandered electrode layer that follows the top support structure design, a bolometer sensing material with a high TCR, and a disk-shaped absorber on top of the sensing material to maximize the heat flux absorption on the sensor. The bottom support of the sensor suspends the top support mesh, creating an air cavity. This air cavity along with the strut based mesh design and optimized thickness, dimension and shape of the layers contributed towards minimizing the thermal conductance of microbolometer and hence improved the figures of merits—responsivity, detectivity, noise equivalent power and noise equivalent temperature difference of microbolometer.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: November 19, 2019
    Inventors: Mukti Rana, Andrew Bodhi Voshell
  • Patent number: 10453635
    Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: October 22, 2019
    Assignee: Intel Corporation
    Inventors: Qing Ma, Johanna Swan, Valluri Rao, Feras Eid
  • Patent number: 10435291
    Abstract: A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: October 8, 2019
    Assignee: DigitalOptics Corporation MEMS
    Inventors: Ankur Jain, Roman C. Gutierrez, Shi-Sheng Lee, Robert J. Calvet, Xiaolei Liu
  • Patent number: 10427931
    Abstract: A capacitive microelectromechanical systems (MEMS) sensor is provided, having conductive coatings on opposing surfaces of capacitive structures. The capacitive structures may be formed of silicon, and the conductive coating is formed of tungsten in some embodiments. The structure is formed in some embodiments by first releasing the silicon structures and then selectively coating them in the conductive material. In some embodiments, the coating may result in encapsulating the capacitive structures.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: October 1, 2019
    Assignee: Analog Devices, Inc.
    Inventor: Bradley C. Kaanta
  • Patent number: 10249576
    Abstract: A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: April 2, 2019
    Assignee: Skyworks Solutions, Inc.
    Inventors: David T. Petzold, David Scott Whitefield
  • Patent number: 10196262
    Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: February 5, 2019
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
  • Patent number: 10192822
    Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.
    Type: Grant
    Filed: February 16, 2015
    Date of Patent: January 29, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Domingo A. Ferrer, Kriteshwar K. Kohli, Siddarth A. Krishnan, Joseph F. Shepard, Jr., Keith Kwong Hon Wong
  • Patent number: 10177027
    Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a substrate and a multilayer film having a step-shaped portion on the substrate; forming a protective layer covering the step-shaped portion of the multilayer film; forming a capping layer having a plurality of steps on the protective layer covering the semiconductor substrate; and removing at least one layer of the multilayer film to form a cavity that is defined by the capping layer and a remaining multilayer film that has the at least one layer removed. The thus formed semiconductor device does not have cracks in the steps of the capping layer when performing an etch process, thereby improving the performance of the semiconductor device.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: January 8, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Xianchao Wang
  • Patent number: 10160641
    Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: December 25, 2018
    Assignee: MEMS Drive, Inc.
    Inventors: Roman Gutierrez, Tony Tang, Xiaolei Liu, Matthew Ng, Guiqin Wang
  • Patent number: 10155655
    Abstract: A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
  • Patent number: 10141287
    Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: November 27, 2018
    Assignee: GOERTEK, INC.
    Inventors: Quanbo Zou, Zhe Wang
  • Patent number: 10132715
    Abstract: A tap-scan bridge damage detection system comprises: a mobile cart (1) capable of moving on a to-be-detected bridge; a tap subsystem (2) mounted on the mobile cart (1) and used for applying a tap load to the to-be-detected bridge; a signal acquisition subsystem (3) mounted on the mobile cart and used for acquiring a response signal transferred from the to-be-detected bridge to the mobile cart; and a signal processing apparatus (4) connected to the signal acquisition subsystem (3) and used for receiving and processing a signal acquired by the signal acquisition subsystem (3), and outputting the bridge damage information processed result. The tap-scan bridge damage detection system can detect bridge damage in a simple, convenient, efficient and accurate manner.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: November 20, 2018
    Assignees: CHINA ROAD & BRIDGE CORPORATION, TSINGHUA UNIVERSITY
    Inventors: Jianchu Zhang, Zhihai Xiang, Hong Liu, Zhihuai Li, Qiuhai Lu, Yaoguo Sun, Yanhua Wang, Lianyou Li, Zhaopu Shen
  • Patent number: 10112826
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a recess in a first substrate and forming a dielectric layer on the first substrate and in the recess. The method also includes forming a second substrate on the dielectric layer and etching a portion of the second substrate to form a MEMS structure. The MEMS structure has a plurality of openings. The method further includes etching a portion of the dielectric layer to form a cavity below the openings.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: October 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hang Chang, Jen-Hao Liu, I-Shi Wang
  • Patent number: 10096511
    Abstract: According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including one or more trenches extending from the surface of the carrier to the hollow chamber, and one or more support structures intersecting the one or more trenches and connecting the first region of the carrier with a second region of the carrier outside the trench structure, wherein the one or more support structures including an electrically insulating material.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: October 9, 2018
    Assignee: Infineon Technologies Dresden GmbH
    Inventor: Steffen Bieselt
  • Patent number: 10081540
    Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: September 25, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Anthony K. Stamper, John G. Twombly
  • Patent number: 10000373
    Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: June 19, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Ping Chen, Carlos H. Diaz, Ken-Ichi Goto, Shau-Lin Shue, Tai-I Yang
  • Patent number: 9995718
    Abstract: The electrostatic sensors of bridge or cantilever type with multiple electrodes, the electrostatic sensors of comb type and piezoelectric sensors are used for the single molecule detection of ligands. The electrical driving of sensors is separated in some cases from the sensing for increased sensitivity. The large arrays of sensors with individual or common sensing circuits are employed to further improve detection sensitivity. The fabrication of the sensors, their functionalization for detection of many chemical and biological species and electrical circuitry, packaging, microfluidic subsystem and the system architecture are also disclosed. The individual, specific sensing of single species or simultaneous detection of multiple species is realized. The freeze drying or critical point drying after exposure of sensors to ligands present in liquids and detection in reduced pressure or vacuum is employed for increased sensitivity, down to the single molecule.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: June 12, 2018
    Inventor: Vlad Joseph Novotny
  • Patent number: 9969613
    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: May 15, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael T. Brigham, Christopher V. Jahnes, Cameron E. Luce, Jeffrey C. Maling, William J. Murphy, Anthony K. Stamper, Eric J. White
  • Patent number: 9965123
    Abstract: A method of manufacturing a touch panel, the method including forming electrode patterns; forming insulating patterns on the electrode patterns; forming a sacrificial layer on the electrode patterns and insulating patterns such that the sacrificial layer includes openings exposing portions of the insulating patterns; forming a conductive layer on the sacrificial layer and in each of the openings; and removing the sacrificial layer to form bridge patterns corresponding to the openings, wherein the sacrificial layer includes a first layer including first openings therein that expose portions of the insulating patterns; and a second layer including second openings therein that expose portions of the insulating patterns, the second layer having a thickness that is larger than a thickness of the first layer.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: May 8, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Sungku Kang, Dongeun Lee, Sangmin Baek
  • Patent number: 9868628
    Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: January 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng
  • Patent number: 9806185
    Abstract: A non-volatile memory device and a method of manufacturing the same are provided. The device includes a substrate including a cell region and a peripheral region, a gate pattern formed over the substrate in the peripheral region, a multilayered structure formed over the gate pattern in the peripheral region, the multilayered structure including interlayer insulating layers and material layers for sacrificial layers, and a capping layer formed between the gate pattern and the multilayered structure in the peripheral region to cover the substrate, the capping layer configured to prevent diffusion of impurities from the material layers for the sacrificial layers into the substrate in the peripheral region.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: October 31, 2017
    Assignee: SK Hynix Inc.
    Inventor: Dong Kee Lee
  • Patent number: 9709596
    Abstract: The invention relates to an acceleration sensor, comprising a substrate having a substrate surface and a sample mass that is movable relative to the substrate in a first direction (x) parallel to the substrate surface. The sample mass has a comb-like electrode that is movable together with the sample mass and has a plurality of teeth, which extend in the first direction (x). The acceleration sensor further comprises a counter-electrode fixedly connected to the substrate, which counter-electrode has a fixed comb-like electrode and wherein said fixed comb-like electrode has a plurality of teeth which extend in a direction opposite to the first direction (x). The teeth of the movable comb-like electrode engage with the teeth of the fixed comb-like electrode. The acceleration sensor further comprises a shielding electrode fixedly connected to the substrate and which is suitable for increasing a pneumatic damping of the sample mass during a deflection movement of the sample mass.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: July 18, 2017
    Assignee: Northrop Grumman LITEF GmbH
    Inventors: Wolfram Geiger, Julian Bartholomeyczik, Peter Leinfelder
  • Patent number: 9630836
    Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: April 25, 2017
    Assignee: MEMS Drive, Inc.
    Inventors: Roman Gutierrez, Tony Tang, Xiaolei Liu, Matthew Ng, Guiqin Wang
  • Patent number: 9611141
    Abstract: The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping-Yin Liu, Li-Cheng Chu, Hung-Hua Lin, Shang-Ying Tsai, Yuan-Chih Hsieh, Jung-Huei Peng, Lan-Lin Chao, Chia-Shiung Tsai, Chun-Wen Cheng
  • Patent number: 9478639
    Abstract: A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first dielectric layer and forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered. The method further comprises forming an epitaxial layer on the uncovered part of the semiconductor substrate, removing the second layer after forming the epitaxial layer and filling an open space formed by removing the second layer with an electrically conductive material. The electrically conductive material forms an electrode which is laterally surrounded by the epitaxial layer.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: October 25, 2016
    Assignee: Infineon Technologies Austria AG
    Inventors: Minghao Jin, Oliver Blank, Rudolf Rothmaler, Johannes Baumgartl
  • Patent number: 9446942
    Abstract: An electronic part includes a bottom portion of a cavity that has an oscillation device, a ceiling portion so disposed that it faces the bottom portion via the cavity and having holes, a shielding portion that is disposed in the cavity and between the bottom portion of the cavity and the ceiling portion and covers the holes in a plan view viewed in the direction in which the bottom portion of the cavity and the ceiling portion are arranged, and sealing portions that are connected to both the ceiling portion and the shielding portion via the holes and seal the holes.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: September 20, 2016
    Assignee: Seiko Epson Corporation
    Inventor: Takuya Kinugawa
  • Patent number: 9365410
    Abstract: A method for producing a micromechanical component, and a micromechanical component, includes providing a substrate having first and second outer surfaces, the second surface facing away from the first surface; forming a through-hole through the substrate from the first outer surface up to the second outer surface; attaching an optical functional layer, on the second outer surface, to cover the through-hole; removing a first segment of the substrate on the first surface of the substrate so that there arises a third outer surface inclined relative to the second surface, the third surface facing away from the second surface, the inclined surface enclosing the through-hole; and separating the micromechanical component by separating a first part of the substrate, having the through-hole, and a second part, attached to the first part, of the optical functional layer from a remaining part of the substrate and a remaining part of the optical functional layer.
    Type: Grant
    Filed: February 17, 2015
    Date of Patent: June 14, 2016
    Assignee: ROBERT BOSCH GMBH
    Inventor: Dietmar Haberer
  • Patent number: 9349793
    Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: May 24, 2016
    Assignee: International Business Machines Corporation
    Inventors: Mark D. Jaffe, Alvin J. Joseph, Qizhi Liu, Anthony K. Stamper
  • Patent number: 9321634
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: April 26, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 9310393
    Abstract: A physical quantity sensor includes a base substrate, a movable part located on the base substrate and provided on a principal surface of the base substrate, a movable electrode part provided in the movable part, and a fixed electrode part provided on the principal surface of the base substrate and located to be opposed to a movable electrode finger, and the fixed electrode part is connected to fixed electrode wiring provided at the principal surface side of the base substrate, the movable electrode part is connected to movable electrode wiring provided at the principal surface side of the base substrate, and a shield part is provided between the fixed electrode wiring and the movable electrode wiring.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: April 12, 2016
    Assignee: Seiko Epson Corporation
    Inventor: Mitsuhiro Yoda
  • Patent number: 9269588
    Abstract: A method of making a flexible, foldable, stretchable electronic device. The method includes deposition of a polymer layer, such as parylene C, to impart flexibility to the device. The device overcomes the limitations of related flexible electronics schemes by employing established silicon-on-insulator complementary metal-oxide-semiconductor technology with a flexible enclosure. Devices made in such a way may be used in a wide variety of applications including incorporation into medical devices.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: February 23, 2016
    Assignee: WAYNE STATE UNIVERSITY
    Inventors: Yong Xu, Hongen Tu, Eric G R Kim, Jessin K. John
  • Patent number: 9250113
    Abstract: Provided herein are sensors and methods for determining properties of single cells, such as cell mass. Sensors disclosed herein include resonant sensors having a suspended platform designed to exhibit a uniform vibration amplitude. Methods are also disclosed for measuring changes in cell mass, changes in cell number, changes in cell viscosity and changes in cell elasticity.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: February 2, 2016
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Rashid Bashir, Kidong Park, Larry Millet, K. Jimmy Hsia, Narayana R. Aluru
  • Patent number: 9217755
    Abstract: The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: December 22, 2015
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian Lee Wardle, Fabio Ferruccio Fachin, Stefan Nikles, Mathew Varghese
  • Patent number: 9218065
    Abstract: A Micro-Electro-Mechanical System (MEMS) accelerometer employing a rotor and stator that are both released from a substrate. In embodiments, the rotor and stator are each of continuous a metal thin film. A stress gradient in the film is manifested in capacitive members of the rotor and stator as a substantially equal deflection such that a relative displacement between the rotor and stator associated with an acceleration in the z-axis is substantially independent of the stress gradient. In embodiments, the stator comprises comb fingers cantilevered from a first anchor point while the rotor comprises comb fingers coupled to a proof mass by torsion springs affixed to the substrate at second anchor points proximate to the first anchor point.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: December 22, 2015
    Assignee: Intel Corporation
    Inventors: Rashed Mahameed, Mohamed A. Abdelmoneum
  • Patent number: 9193584
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: November 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 9188600
    Abstract: A method for manufacturing a physical quantity detector is for a physical quantity detector including a flat frame-like base part, a flat plate-like moving part which is arranged inside the base part and has one end thereof connected to the base part via a joint part, and a physical quantity detection element laid on the base part and the moving part. The method includes: integrally forming the base part, the joint part, the moving part, and a connecting part which is provided on a free end side of the moving part and connects the base part and the moving part to each other; laying and fixing the physical quantity detection element on the base part and the moving part; and cutting off the connecting part.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: November 17, 2015
    Assignee: Seiko Epson Corporation
    Inventors: Jun Watanabe, Kazuyuki Nakasendo, Takahiro Kameta
  • Patent number: 9172352
    Abstract: Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: October 27, 2015
    Assignee: Harris Corporation
    Inventor: John E. Rogers
  • Patent number: 9151949
    Abstract: The invention relates to a deflection device for a projection apparatus for projecting Lissajous figures onto an observation field which is made to deflect a light beam about at least one first and one second deflection axis for generating Lissajous figures having a deflection unit for producing oscillations about the deflection axes and having a control apparatus for producing control signals for the deflection unit having a first and second control frequency which substantially corresponds to the resonant frequencies of the deflection unit, wherein the deflection unit has a quality factor of >3,000 and the control apparatus includes a feedback loop which is configured to regulate the first and/or second control frequencies in dependence on a measured phasing of the oscillations of the deflection unit so that the maximum amplitude of the oscillations remains in the resonant range of the deflection unit.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: October 6, 2015
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Ulrich Hofmann, Lars Ratzmann, Joachim Janes, Manfred Weiss, Sascha Mühlmann
  • Patent number: 9103673
    Abstract: A time-domain inertial sensor comprising: a support structure having an electrode plane parallel to an x-y plane of an x-y-z mutually orthogonal coordinate system, wherein the support structure's largest dimension lies within the x-y plane; a proof mass having a first surface parallel to the x-y plane; wherein the proof mass is springedly coupled to the support structure such that the first surface is separated from the electrode plane by a gap; a driver configured to drive the proof mass to oscillate with respect to the support structure in approximately only the x-direction such that, while oscillating, the gap does not vary significantly; and a first, time-domain, proximity switch disposed to switch from an open state to a closed state each time the proof mass is in a first reference position with respect to the support structure.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: August 11, 2015
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Paul David Swanson, Richard L. Waters, Charles H. Tally, Andrew Wang
  • Patent number: 9076615
    Abstract: A method is provided to form an electromechanical relay. A magnetic layer is etched to form a substrate-metal structure having a pattern of conductive contacts. The substrate-metal structure is electroplated. The electroplated structure is attached to a printed circuit board (PCB). A portion of the electroplated structure is removed to electrically decouple the conductive contacts. The PCB includes a common contact terminal aligned to one end of each conductive contact. The PCB includes magnetic actuators each having a magnetic core with a first core part disposed within a via extending through layers of the PCB, and an electrical coil disposed around the first core part within layers of the PCB. Each conductive contact is aligned to an associated magnetic actuator to enable electrical contact between the common contact terminal and the conductive contact upon activation of the associated magnetic actuator.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: July 7, 2015
    Assignee: International Business Machines Corporation
    Inventors: Christian Wilhelmus Baks, Richard A. John, Young Hoon Kwark
  • Patent number: 9048378
    Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: June 2, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Publication number: 20150145074
    Abstract: A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Inventors: Stefan Kolb, Andreas Meiser, Till Schloesser, Wolfgang Werner
  • Patent number: 9040326
    Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: May 26, 2015
    Assignee: The Regents of the University of California
    Inventors: Hong Zhong, Anurag Tyagi, Kenneth J. Vampola, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 9038269
    Abstract: A nanoprinthead including an array of nanotip cantilevers, where each nanotip cantilever includes a nanotip at an end of a cantilever, and a method for forming the nanoprinthead. Each nanotip may be individually addressable through use of an array of piezoelectric actuators. Embodiments for forming a nanoprinthead including an array of nanotip cantilevers can include an etching process from a material such as a silicon wafer, or the formation of a metal or dielectric nanotip cantilever over a substrate. The nanoprinthead may operate to provide uses for technologies such as dip-pen nanolithography, nanomachining, and nanoscratching, among others.
    Type: Grant
    Filed: April 2, 2013
    Date of Patent: May 26, 2015
    Assignee: XEROX CORPORATION
    Inventors: Peter J. Nystrom, Andrew W. Hays, Bijoyraj Sahu
  • Patent number: 9034680
    Abstract: In a method for producing a micro-electromechanical device in a material substrate, a component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: May 19, 2015
    Assignee: ELMOS Semiconductor AG
    Inventor: Arnd Ten-Have
  • Patent number: 9034681
    Abstract: An embodiment of the invention provides a chip package, which includes: a substrate having an upper surface and a lower surface; a passivation layer located overlying the upper surface of the substrate; a plurality of conducting pad structures disposed overlying the upper surface of the substrate, wherein at least portions of upper surfaces of the conducting pad structures are exposed; a plurality of openings extending from the upper surface towards the lower surface of the substrate; and a plurality of movable bulks located between the openings and connected with the substrate, respectively, wherein each of the movable bulks is electrically connected to one of the conducting pad structures.
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: May 19, 2015
    Assignee: Xintec Inc.
    Inventor: Chia-Ming Cheng
  • Patent number: 9023675
    Abstract: A process for encapsulating a microelectronic device, comprising the following steps: make the microelectronic device on a first substrate; make one portion of a first material not permeable to the ambient atmosphere and permeable to a noble gas in a second substrate comprising a second material not permeable to the ambient atmosphere and the noble gas; secure the second substrate to the first substrate, forming at least one cavity inside which the microelectronic device is encapsulated such that said portion of the first material forms part of a wall of the cavity; inject the noble gas into the cavity through the portion of the first material; hermetically seal the cavity towards the ambient atmosphere and the noble gas.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: May 5, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Stephane Nicolas
  • Patent number: 9018724
    Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: April 28, 2015
    Assignee: AdvancedMEMS LLP
    Inventors: Albert Ting, Daniel T. McCormick, Michael Rattner
  • Patent number: 9006846
    Abstract: This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: April 14, 2015
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Janusz Bryzek, John Gardner Bloomsburgh, Cenk Acar