Abstract: The thermal sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, and a heater provided on or inside the membrane, wherein the heater includes wires in a mesh form constituted by a conductive member.

Abstract: A micromechanical component, whose diaphragm is supported and has support structures on its inner diaphragm side. Each of the support structures includes a first and second edge element structure, and at least one intermediate element structure positioned between the first and second edge element structures. For each of the support structures, a plane of symmetry is definable, with respect to which at least the first edge element structure of the respective support structure and the second edge element structure of the respective support structure are specularly symmetric. In each of support structures, a first maximum dimension of its first edge element structure perpendicular to its plane of symmetry and a second maximum dimension of its second edge element structure perpendicular to its plane of symmetry are greater than the maximum dimension of its intermediate element structure perpendicular to its plane of symmetry.

Abstract: The present disclosure relates to force sensors and force sensor substrates for use with surgical devices.

Abstract: A hearing aid includes: a radio; and a moulded interconnect device (MID) housing; wherein the moulded interconnect device (MID) housing comprises an antenna integrated with the moulded interconnect device (MID) housing such that the antenna is an integral part of the moulded interconnect device (MID) housing; wherein the antenna is operatively connected with the radio for wireless communication.

Abstract: An electrostatic acoustic wave generating device and an electrostatic speaker making entries of dust, water, moisture, etc. into the device and the speaker, allowing reduction in power. A plate-like fixed electrode has a through hole penetrating the thickness of the fixed electrode. A vibrating body and a vibrating electrode each having a plate-like shape are arranged closer to one surface and closer to the other surface of the fixed electrode respectively, and are movable in the respective thickness directions thereof. A connection member connects the vibrating body and the vibrating electrode to each other through the through hole of the fixed electrode to cause the vibrating body and the vibrating electrode to move toward the same direction. Voice signal input is capable of applying a voltage to the fixed electrode, the vibrating body, and the vibrating electrode to move the vibrating body between the fixed electrode and the vibrating body.

Abstract: An ultrasonic generator includes a substrate, a lower electrode on the substrate, an upper electrode on the lower electrode, and an ultrasonic generation unit between the lower electrode and the upper electrode. The ultrasonic generation unit includes a vibration chamber and an ultrasonic generation layer on the vibration chamber. The ultrasonic generation layer is configured to propel a surrounding medium to vibrate to generate ultrasonic waves in response to a voltage difference between the upper electrode and the lower electrode.

Abstract: A micromechanical component for a sensor device including a substrate having a substrate surface, at least one stator electrode situated on the substrate surface and/or on the at least one intermediate layer covering at least partially the substrate surface, which is formed in each case from a first semiconductor and/or metal layer, at least one adjustably situated actuator electrode, which is formed in each case from a second semiconductor and/or metal layer, and a diaphragm spanning the at least one stator electrode and the at least one actuator electrode, including a diaphragm exterior side directed away from the at least one stator electrode, which is formed from a third semiconductor and/or metal layer, a stiffening and/or protective structure protruding at the diaphragm exterior side being formed from a fourth semiconductor and/or metal layer.

Abstract: Embodiments include systems and methods for determining a processing parameter of a processing operation. Embodiments include a diagnostic substrate for determining processing parameters of a processing operation. In an embodiment, the diagnostic substrate comprises a substrate, a circuit layer over the substrate, and a capping layer over the circuit layer. In an embodiment, a micro resonator sensor is in the circuit layer and the capping layer. In an embodiment, the micro resonator sensor comprises, a resonating body and one or more electrodes for inducing resonance in the resonating body.

Abstract: A monolithic gas-sensing chip assembly for sensing a gas analyte includes a sensing material to detect the gas analyte, a sensing system including a resistor-capacitor electrical circuit, and a heating element. A sensing circuit measures an electrical response of the sensing system to an alternating electrical current applied to the sensing system at (a) one or more different frequencies, or (b) one or more different resistor-capacitor configurations of the system. One or more processors control a low detection range of the system to the gas, a high detection range of the system to the gas, a linearity of a response of the system to the gas, a dynamic range of measurements of the gas by the system, a rejection of interfering gas analytes by the system, a correction for aging or poisoning of the system, or a rejection of ambient interferences that may affect the electrical response of the system.

Abstract: A MEMS micromirror device includes a monolithic body of semiconductor material having a first main surface and a second main surface, with the monolithic body having an opening extending from the second main surface and including a suspended membrane of monocrystalline semiconductor material extending between the opening and the first main surface of the monolithic body. The suspended membrane includes a supporting frame and a mobile mass carried by the supporting frame and rotatable about an axis parallel to the first main surface, with the mobile mass having a width less than a width of the opening. A reflecting region extends over the mobile mass.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.

Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Abstract: A vacuum packaged infrared sensor array with excellent performances is described. The individual pixel of the infrared sensor array has a thermopile made of recrystallized amorphous silicon resulting in low resistance, low thermal noise, high integration and high sensitivity. The vacuum in the packaged infrared sensor array is enhanced by low temperature oxidization of a porous silicon layer formed in a lid silicon substrate which is bonded with the infrared sensor array silicon substrate. The driving force for lowering oxidization temperature is reduction in surface energy of porous silicon. It has been reported that the surface energy is 0.0001 J/cm2 for porous silicon and 0.2 J/cm2 for planar crystal silicon.

Abstract: A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.

Abstract: A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.

Abstract: A MEMS transducer system includes a MEMS transducer device for sensing at least one of pressure signal or acoustic signal. The MEMS transducer device includes first and second diaphragms. Formed between the diaphragms are a spacer, plate capacitor elements, and electrode elements. The plate capacitor elements are coupled to the diaphragms via the spacer. An optional member may be disposed within the spacer. The distal ends of the electrode elements are coupled to a structure such as insulator element. An optional oxides may be formed within the plate capacitor elements. Pressure sensing electrode formed between the diaphragms may be coupled to the insulator element.

Abstract: A device for the transfer of chips from a source substrate onto a destination substrate, including: a source substrate having a lower surface and an upper surface; and a plurality of elementary chips arranged on the upper surface of the source substrate, wherein each elementary chip is suspended above the source substrate by at least one breakable mechanical fastener, said at least one breakable mechanical fastener having a lower surface fastened to the upper surface of the source substrate and an upper surface fastened to the lower surface of the chip.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

Abstract: A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively.

Abstract: Semiconductor strain gages fabricated on Silicon-on-insulator (SOI) material, and the method of making them. Force sensing elements are uniformly batch-fabricated at wafer level and singulated individually by a wire bonding method. In another method, they are singulated by plucking them off the wafer from their attachment site.

Abstract: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.

Abstract: A method for manufacturing a micromechanical component having a disengaged pressure sensor device includes: configuring an electrically conductive sacrificial element in or on a first outer surface of a first substrate; applying a second substrate on or upon the outer surface of the first substrate over the sacrificial element; configuring a pressure sensor device by anodic etching of the second substrate; configuring in the second substrate at least one trench that extends to the sacrificial element; and at least partly removing the sacrificial element in order to disengage the pressure sensor device.

Abstract: In described examples of a micromechanical system (MEMS), a rigid cantilevered platform is formed on a base substrate. The cantilevered platform is anchored to the base substrate by only a single anchor point. A MEMS resonator is formed on the cantilevered platform.

Abstract: A pressure measurement device comprising a pressure sensor of a first type and a pressure sensor of a second type different from the first, which sensors are mounted on a common support in order to be subjected to the same pressure, in which the pressure sensor of the first type is of the capacitive type, the device being characterized in that the pressure sensor of the first type comprises at least one membrane and a first internal channel passing through the common support, a second internal channel bringing a fluid to the membrane being in fluid flow connection with the first internal channel. A calibration method associated with the device.

Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Abstract: An integrated MEMS electronic circuit that comprises a circuit wafer; a micromechanical structure being attached to a first surface of the circuit wafer and electrically coupled to an integrated circuit formed under said first surface. A capping chip having side surfaces substantially perpendicular to its main surfaces comprises a recess and is bonded to the first surface of the circuit wafer such that said micromechanical structure is enclosed in a cavity comprising the recess in the capping chip. Both the circuit wafer and the capping wafer can be further thinned while exposing at least one connection pad on the first surface of the circuit wafer that is not covered by the capping chip and that is coupled electrically to the integrated circuit.

Abstract: A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.

Abstract: An inertial sensor having a simple configuration by vacuum sealing a resonator which detects acceleration and exploits a resonance vibration using a high Q value MEMS device. The sensor includes: a detecting proof mass and beam which detects acceleration; a driving electrode which excites the detecting proof mass and beam; a resonant frequency tuning electrode which changes the resonant frequency of the detecting proof mass and beam; and a detecting circuit which applies voltage to the resonant frequency tuning electrode for changing the resonant frequency to cancel a change of the resonant frequency of the detecting proof mass and beam when the acceleration is applied to the detecting proof mass and beam during the vibration of the detecting proof mass and beam by the voltage applied to the detecting proof mass and beam, and outputs the acceleration based on a value of the voltage applied to resonant frequency tuning electrode.

Abstract: According to an embodiment, a microfabricated structure includes a cavity disposed in a substrate, a first clamping layer overlying the substrate, a deflectable membrane overlying the first clamping layer, and a second clamping layer overlying the deflectable membrane. A portion of the second clamping layer overlaps the cavity.

Abstract: According to one embodiment, the source layer includes a semiconductor layer including a dopant. The columnar portions are disposed in an area between the separation portions. The columnar portions extend in the stacking direction through the stacked body and through the semiconductor layer. The columnar portions include a plurality of semiconductor bodies including sidewall portions contacting the semiconductor layer. The dopant diffusion prevention film is provided inside the semiconductor layer and separated from the columnar portions in an area between the columnar portions. The dopant diffusion prevention film is not provided inside the semiconductor layer in an area between the separation portion and the columnar portions.

Abstract: A MEMS apparatus for thermal energy control including a sensor and an IC chip is provided. The sensor includes a heating device for heating a sensing element and a detecting device for detecting a physical quantity. The IC chip includes a memory unit for storing a target value of the sensing element and a data processing unit for convert the physical quantity to a converted value, where a gap value is defined by subtracting the converted value from the target value. Besides, a control unit of the IC chip sets a parameter value according to the gap value, and a driving unit adjusts a quantity of thermal energy generated by the heating device according to the parameter value to reduce heating time and frequency of the heating device thereby reducing electrical power consumption. The MEMS apparatus is applicable to MEMS sensors requiring controlled operating temperature, such as a gas sensor.

Abstract: A method includes forming a mask that defines a masked area and an unmasked area on a front side of a substrate, and implanting a buried layer corresponding to the unmasked area on the front side of the substrate. The method also includes forming an epitaxial layer having a back side on the front side of the substrate and on a front side of the buried layer, and creating an opening into a back side of the substrate up to a back side of the epitaxial layer and a back side of the one or portions of the buried layer.

Abstract: A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.

Abstract: An electrical assembly includes a first electrical component with a first conductor, a second electrical component with a second conductor, and an accommodating chamber which is formed on the electrical assembly and in which an electrical contact point between the first and second conductors is arranged. The first conductor is arranged in a first insulating part and has at a free conductor end that protrudes from the first insulating part. The second conductor is arranged in a second insulating part and has a free conductor end that protrudes from the second insulating part. The accommodating chamber is partially filled with a potting mass such that the contact point and the free conductor ends are covered by the potting mass and the potting mass is bounded by an inner wall of the accommodating chamber. The inner wall of the accommodating chamber is formed by wall surfaces of the insulating parts.

Abstract: Semiconductor devices having group III-V material active regions and graded gate dielectrics and methods of fabricating such devices are described. In an example, a semiconductor device includes a group III-V material channel region disposed above a substrate. A gate stack is disposed on the group III-V material channel region. The gate stack includes a graded high-k gate dielectric layer disposed directly between the III-V material channel region and a gate electrode. The graded high-k gate dielectric layer has a lower dielectric constant proximate the III-V material channel region and has a higher dielectric constant proximate the gate electrode. Source/drain regions are disposed on either side of the gate stack.

Abstract: A sensor includes a diaphragm having a bonding portion and a main boss separated from the bonding portion by at least one channel, the main boss having a first side face, a second side face and a chamfered corner face connecting the first side face to the second side face. A base of the sensor has a first contact area aligned with the main boss and separated from the main boss, wherein the bonding portion of the diaphragm is bonded to the base. At least one sensing element senses movement of the diaphragm.

Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate region made of conductive material, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate region, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: A surface of a cavity of a MEMS device that is rough to reduce stiction. In some embodiments, the average roughness (Ra) of the surface is 5 nm or greater. In some embodiments, the rough surface is formed by forming one or more layers of a rough oxidizable material, then oxidizing the material to form an oxide layer with a rough surface. Another layer is formed over the oxide layer with the rough surface, wherein the roughness of the oxide layer is transferred to the another layer.

Abstract: The present disclosure relates to shear sensor arrays. In particular, the present disclosure relates to a floating element shear stress sensor array on a chip that is calibrated to high shear levels and is calibrated to determine the sensitivity to streamwise pressure gradients.

Abstract: In one embodiment, a polymerase chain reaction (PCR) system includes a mixture chamber, a denature chamber, an annealing chamber, an extension chamber, and a product chamber, that are fluidically coupled to one another through a plurality of microfluidic channels. An inertial pump is associated with each microfluidic channel, and each inertial pump includes a fluid actuator integrated asymmetrically within its associated microfluidic channel. The fluid actuators are capable of selective activation to circulate fluid between the chambers in a controlled cycle.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment.

Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.

Abstract: A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.

Abstract: A method includes applying a compressive force against MEMS structures at a front side of a MEMS wafer using a protective material covering at least a portion of the front side of the MEMS wafer. The method further includes concurrently dicing through the protective material and the MEMS wafer from the front side to produce a plurality of MEMS dies, each of which includes at least one of the MEMS structures. The protective material is secured over the front side of the MEMS wafer to apply pressure to the protective material, and thereby impart the compressive force against the MEMS structures to largely limit movement of the MEMS structures during dicing. A tack-free surface of the protective material enables its removal following dicing.

Abstract: A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.

Abstract: There is provided a method for manufacturing a capacitive micromachined ultrasonic transducer. In this method, a first insulating layer and a vibrating membrane are bonded by heat treatment and a second insulating layer is formed by thermal oxidation in a single heating step, with a cavity provided in the transducer communicating with the outside of the transducer through a communication portion.

Abstract: A packaged MEMS transducer device comprising: a die, including: a semiconductor body having a front side and a back side, opposite to one another in a first direction, at least one cavity extending through the semiconductor body between the front side and the back side, and at least one membrane extending on the front side at least partially suspended over the cavity; and a package designed to house the die on an inner surface thereof. The transducer device moreover includes a sealing layer extending on the back side of the semiconductor body for sealing the cavity, and includes a paste layer extending between the sealing layer and the inner surface of the package for firmly coupling the die to the package.