Abstract: An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer.

Abstract: Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

Abstract: A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.

Abstract: Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

Abstract: An apparatus for detecting a bio material includes: an conjugate of a bio material and a fluorescent material to be excited and emit light of a lower energy than an energy of incident light by virtue of the fluorescent material when the light is incident; and an optical filter for allowing the excitation-emitted light from the conjugate, among the incident light, to be transmitted therethrough. The apparatus further includes a photoelectric conversion device for converting the light transmitted through the optical filter into an electric signal.

Abstract: A method for manufacturing an image sensor including forming a microlens array over a color filter array, forming a capping layer over the semiconductor substrate including the microlens array, forming a pad mask over the capping layer, and then exposing a pad in an interlayer dielectric layer.

Abstract: An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are generated in the silicon substrate 4 in response to the illuminated light, so as to perform imaging. The back-illuminated type imaging device 100 includes pad portions 17 formed on the back surface of the semiconductor substrate 4, and a plurality of pillars 9 that are formed in the semiconductor substrate 4, are made of a conductive material and electrically connect wiring portions 12 formed on the front surface of the semiconductor substrate 4 and the pad portions 17 to each other.

Abstract: A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

Abstract: A front-side illuminated image sensor, including photodetection regions, charge transfer elements, and an interconnection stack, all formed at the surface of a semiconductor substrate, microcavities being formed in the interconnection stack in front of the photodetection regions, microcavities being filled with materials forming color filters including metal pigments, regions of a material forming a barrier against ionic diffusion extending on the lateral walls of the microcavities.

Abstract: It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained.

Abstract: A solid-state imaging device includes a light blocking layer formed in an active pixel region of a pixel region on a light incident side so as to surround a photoelectric conversion unit of each pixel and formed in an extending manner to an optical black region, a concave portion formed so as to be surrounded by the light blocking layer in a region corresponding to the photoelectric conversion unit, a first refractive index layer formed on surfaces of the light blocking layer and the concave portion and having a relatively low refractive index, a second refractive index layer formed on the first refractive index layer so as to be buried in the concave portion and having a relatively high refractive index, and an anti-flare layer formed on the first refractive index layer in the optical black region.

Abstract: According to one embodiment, an imaging device includes a semiconductor substrate having a first conductivity type, a well region which is arranged on a front surface side of the semiconductor substrate and has the first conductivity type, photodiodes which are arranged in the well region and have a second conductivity type, a diffusion layer which is arranged between the photodiodes, supplies a potential to the well region, and has the first conductivity type, an overflow drain layer which is arranged on a back surface side of the semiconductor substrate and has the second conductivity type, an overflow drain electrode which extends from the front surface side of the semiconductor substrate to the overflow drain layer and supplies a bias potential to the overflow drain layer from the front surface side of the semiconductor substrate, and a wiring layer which is arranged on the front surface of the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor device includes: a through-hole formed in a semiconductor layer; a through-hole insulting layer formed on a sidewall of the through-hole to retract from a front surface of the semiconductor layer; a through-electrode embedded in the through-hole via the through-hole insulating layer; and a sidewall insulating film formed on a sidewall of the through-electrode to be embedded in a retracting section of the through-hole insulating layer.

Abstract: In an integrated circuit, a light sensitive area is protected against radiation by arranging a light blocking layer sequence (504) on top of the light sensitive area. The light blocking layer sequence comprises one or several metal layers (504a) and a silicon layer (503b, 1) for the purpose of absorption. A moth eye structure is provided on the silicon layer. Thereby, a radiation incident by reflection is minimized in such a way that also stray light can effectively be kept from the light sensitive area below the light blocking layer sequence (504).

Abstract: A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion.

Abstract: An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses are formed on the planar transparent layer over the color filters.

Abstract: An image sensor has a large bridge margin from a repulsive force between adjacent micro lenses having different surface properties. The image sensor has a larger bridge margin with a configuration of a stepped portion between two areas, where the first and the second group of micro lenses are formed, over a planarization layer below these two areas. Thus, a zero gap is realized, where no gap between micro lenses exists, and the fill factor of micro lens is maximized. By the realization of the zero gap, interference effects decrease, noise decreases, and fill factor increases, and thus the sensitivity of an image sensor increases, especially the green sensitivity.

Abstract: A display device and method for manufacturing the same are disclosed. The display device includes a first substrate, a second substrate, a touch-sensing element, and a liquid crystal. The first substrate has a first surface and a second surface thereon. The second substrate has a pixel array and is disposed on the second surface of the first substrate. The touch-sensing element locates on the first surface of the first substrate. Furthermore, the touch-sensing element includes a conductive layer, a patterned electrode, and a passivation layer. The patterned electrode is correspondingly located on the periphery of the first substrate, and electrically connected to the conductive layer. The passivation layer covers the conductive layer and the patterned electrode. In addition, the liquid crystal is disposed between the first substrate and the second substrate.

Abstract: A metal layer structure includes a substrate, a metal layer and a composite passivation. The metal layer is disposed in the substrate. The composite passivation includes a first material layer covering the substrate, an opening disposed in the first material layer and exposing the metal layer as well as a second material layer. The second material layer surrounds the sidewall of the opening, covers part of the bottom of the opening and exposes the metal layer.

Abstract: The present invention provides a colored composition for a light-shielding film including at least one selected from titanium atom-containing black titanium pigments and at least one organic pigment selected from the group consisting of a red organic pigment, a yellow organic pigment, a violet organic pigment, and an orange color organic pigment, which has a maximum value of the transmittance of light having a wavelength of 400 to 700 nm of 1.5% or less when a film is formed such that the light transmittance at a wavelength of 650 nm is 0.2%, has a wavelength showing the maximum transmittance at 400 to 550 nm, and has a light transmittance at a wavelength of 400 nm of 0.1% or more.

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: A method of manufacturing a solid-state image sensor, includes forming a color-filter layer including a plurality of color filters on a wiring structure arranged on a semiconductor substrate on which a plurality of photoelectric converters are formed, forming a photosensitive microlens material layer on the color-filter layer, and forming microlenses by forming a latent image on the microlens material layer by exposing the microlens material layer using a photomask having a transmitted light distribution corresponding to a density of light-shielding portions each having a size smaller than a resolution limit of an exposure apparatus, and developing the microlens material layer, wherein the color-filter layer has a surface step, and the microlens material layer has a surface step corresponding to the surface step of the color-filter layer.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating layer microlens formed in the trench of the interlayer dielectric layer. According to the method, a substrate including a pixel area and a logic circuit area is prepared; an interlayer dielectric layer is formed on the substrate; a first microlens pattern is formed on the interlayer dielectric layer on the pixel area; and a second microlens pattern is formed by etching the interlayer dielectric layer on the pixel area using the first microlens pattern as an etch mask. During the etching, a second photoresist pattern, exposing the first microlens pattern, can be used to protect the interlayer dielectric layer on the logic circuit area.

Abstract: Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.

Abstract: A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film.

Abstract: A method of manufacturing a thin film transistor substrate includes a first process in which a gate line pattern including a gate line and a gate electrode is formed with a first conductive material on a substrate using a first mask, a second process in which a first insulating layer is formed on the substrate and a data line pattern including a data line, a source electrode, and a drain electrode is formed with a second conductive material using a second mask, and a third process in which a second insulating layer is formed on the substrate and a pixel electrode connected to the drain electrode is formed on the second insulating layer with a third conductive material.

Abstract: Disclosed are methods of manufacturing a semiconductor device. The method of manufacturing one semiconductor device includes forming a transistor structure on a semiconductor substrate, forming a metal interconnection layer on the transistor structure, forming a protective layer on the metal interconnection layer, and implanting hydrogen ions into the semiconductor substrate having the protective layer by using a hydrogen ion implanter. Hydrogen ions are stably and effectively implanted into a selected region by using a hydrogen ion implanter in the manufacturing process of the semiconductor device, thereby facilitating the manufacturing process and improving the performance of the semiconductor device.

Abstract: Provided is a method of manufacturing a solid-state imaging device including: forming a first pattern having an independent island shape configured by an optical filter material on some of photoelectric conversion units among a plurality of photoelectric conversion units arranged on the surface of a substrate; forming a mixed color prevention layer on a side wall of the first pattern; and forming a second pattern having an independent island shape configured by an optical filter material on the rest of the photoelectric conversion units among the plurality of photoelectric conversion units while the mixed color prevention layer is closely disposed between the first pattern and the second pattern.

Abstract: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.

Abstract: A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.

Abstract: A chip for a chip-incorporating portable article having a card format, such as for smartcards. The chip includes a silicon substrate layer having integrated circuits in its active face defining a central processor unit and memories. The chip also includes physical means for providing physical protection against the action of electromagnetic radiation in the infrared range of wavelength longer than 1 ?m.

Abstract: A solid state imaging device of the present invention comprises: a semiconductor substrate; a plurality of light receiving elements arranged in a matrix configuration on the semiconductor substrate; a plurality of color filter segments provided above the light receiving elements; and a light collector provided above the color filter segments for collecting light on the light receiving elements. The color filter segments are mutually separated by interstices. The interstices contain a gas.

Abstract: An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.

Abstract: A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: A pixel of an image sensor includes a color filter configured to pass visible wavelengths, and an infrared cut-off filter disposed on the color filter configured to cut off infrared wavelengths.

Abstract: An electronic device may have an image sensor array that captures images. The image sensor array may include antireflective layers that increase the efficiency of the image sensor in gathering incoming light. The image sensor array may include a first antireflective layer between a color filter layer and a passivation layer and a second antireflective layer between the passivation layer and a dielectric stack. The first antireflective layer may have an index of refraction that is between the indexes of refraction of the color filter layer and the passivation layer and the second antireflective layer may have an index of refraction that is between the indexes of refraction of the dielectric stack and the passivation layer, thereby reducing the proportion of incident light that reflects off the interface between the color filter layer and the passivation layer and the interface between the passivation layer and the dielectric stack.

Abstract: Provided are a sensor array substrate, a display device including the same, and a method of manufacturing the sensor array substrate. The sensor array substrate includes: a substrate; a plurality of pixel regions defined by intersections of gate wirings and data wirings on the substrate; and a plurality of first sensor units and a plurality of second sensor units which are formed in the pixel regions. The first sensor units sense light in an infrared wavelength range, the second sensor units sense light in a visible wavelength range, two first sensor units that are disposed adjacent to each other in a data wiring direction form a first group, and two second sensor units that are disposed adjacent to each other in the data wiring direction form a second group. The first and second groups are alternately arranged in the data wiring direction and a gate wiring direction.

Abstract: The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract: A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization.

Abstract: A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.

Abstract: An imaging device formed as a CMOS semiconductor integrated circuit includes a nitrogen containing insulating material beneath a photogate. The nitrogen containing insulating material, preferably be one of a silicon nitride layer, an ONO layer, a nitrode/oxide layer and an oxide/nitrode layer. The nitrogen containing insulating layer provides an increased capacitance in the photogate region, higher breakdown voltage, a wider dynamic range and an improved signal to noise ratio. The invention also provides a method for fabricating a CMOS imager containing the nitrogen containing insulating layer.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to etch a first portion of a LP funnel in a dielectric layer of a semiconductor structure using a web etching process, wherein the dielectric layer is above a photodiode region. The process may also be configured to etch a second portion of the LP funnel in the dielectric layer subsequent to the etching of the first portion of the LP funnel, wherein the second portion of the LP funnel is etched below the first portion of the LP funnel using a dry etching process.

Abstract: An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a passivation layer on a substrate having a pad area and a pixel area, a color filter layer on the passivation layer over the pixel area, a first low temperature oxide layer on the substrate including the color filter layer, and a low temperature oxide layer microlens on the first low temperature oxide layer. The low temperature oxide layer microlens can include a seed microlens and a second low temperature oxide layer on the seed microlens. The seed microlens can be formed from the first low temperature oxide layer.

Abstract: An image sensor of a semiconductor and a method for fabricating the same includes a photodiode; an interlayer dielectric layer formed over the photodiode; a wave guide including an ion implantation layer formed in the interlayer dielectric; a color filter formed over the interlayer dielectric layer; and a micro lens formed over the color filter.

Abstract: A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.