Abstract: According to an exemplary embodiment of the present disclosure, a display device includes a display panel divided into a display area, a non-display area, a bending area, and a pad area and bent in one direction in the bending area; a plurality of pixels disposed in the display area; at least one gate driver disposed in the non-display area and configured to supply a gate voltage to the plurality of pixels; flexible films connected to a plurality of pads disposed in the pad area; and at least one electrostatic discharge (ESD) circuit disposed in the pad area and connected to the at least one gate driver through a discharge line.

Abstract: Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Abstract: A semiconductor package includes a first semiconductor die, an adhesive layer, a second semiconductor die, a plurality of conductive pillars and an encapsulant. The adhesive layer is adhered to the first semiconductor die. The second semiconductor die is stacked over the first semiconductor die. The conductive pillars surround the first semiconductor die. The encapsulant encapsulates the first semiconductor die and the conductive pillars, wherein a top surface of the encapsulant is higher than top surfaces of the conductive pillars.

Abstract: An optical system includes a lens layer including a plurality of microlenses arranged along orthogonal first and second directions, and at least one optically opaque mask layer spaced apart from the lens layer and defining a plurality of through openings therein arranged along the first and second directions. There is a one-to-one correspondence between the microlenses and the openings, such that for each microlens, the microlens and corresponding openings are substantially centered on a straight line making a same oblique angle with the lens layer. An optical layer can include the lens layer and the optically opaque mask layer embedded in the optical layer.

Abstract: A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is Si1?xGex, where x is in the range between 0.2 and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

Abstract: Systems and methods for testing a photonic IC (PIC) with an optical probe having an out-of-plane edge coupler to convey test signals between the out-of-plane probe and an edge coupled photonic waveguide within a plane of the PIC. To accommodate dimensions of the optical probe, a test trench may be fabricated in the PIC near an edge coupler of the waveguide. The optical probe may be displaced along one or more axes relative to a prober to position a free end of the prober within the test trench and to align the probe's out-of-plane edge coupler with an edge coupler of a PIC waveguide. Accordingly, a PIC may be probed at the wafer-level, without first dicing a wafer into PIC chips or bars. The optical probe may be physically coupled to a prober through a contact sensor to detect and/or avoid physical contact between probe and PIC.

Abstract: An image sensor includes a first substrate including a focus pixel region and pixel regions around the focus pixel region, each of the focus pixel region and the pixel regions including at least one photoelectric conversion region, color filters provided on the focus pixel region and the pixel regions, respectively, and on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. The micro lenses include an auto-focus lens on the focus pixel region, a first micro lens adjacent to the auto-focus lens, and a standard micro lens spaced apart from the auto-focus lens.

Abstract: Techniques are disclosed for optical imager devices, systems, and methods. In one example, an imaging system includes a focal plane array (FPA) and a light shield. The FPA includes a detector array configured to detect a first portion of electromagnetic radiation and generate a detector signal based on the first portion. The FPA further includes a readout circuit coupled to the detector array and configured to receive the detector signal. The light shield is coupled to the FPA and configured to block a second portion of the electromagnetic radiation. Related devices and methods are also provided.

Abstract: Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.

Abstract: A semiconductor substrate includes: a base substrate; a removal layer, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer provided above the removal layer; and a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer. The thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member.

Abstract: Distance measurement accuracy is improved. A light-receiving element according to an embodiment includes a semiconductor substrate, and lattice-shaped pixel separating parts that divide the semiconductor substrate into a plurality of pixel regions arranged in a matrix form, wherein each of the pixel regions includes: a first semiconductor region disposed on a first surface side in the semiconductor substrate; a second semiconductor region disposed on the first surface side in the semiconductor substrate separately from the first semiconductor region; and a first blocking region disposed between the first semiconductor region and the second semiconductor region on the first surface side in the semiconductor substrate and having a dielectric constant different from that of the semiconductor substrate.

Abstract: Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

Abstract: An apparatus includes an optoelectronic component mounted to a PCB substrate. A transmissive adhesive is disposed directly on the optoelectronic component and is transmissive to light of a wavelength sensed by, or emitted by, the optoelectronic component. The apparatus includes an optical filter disposed directly on the transmissive adhesive. An epoxy laterally surrounds and is in contact with side surfaces of the transmissive adhesive and the optical filter. The epoxy is non-transmissive to light of a wavelength sensed by, or emitted by, the optoelectronic component. In some cases, the epoxy defines a recess directly over the optical filter to accommodate an optical component, such as an optical diffuser. Methods of fabricating the modules are disclosed as well.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having photoelectric conversion elements. The semiconductor device also includes a first light-shielding layer disposed on the substrate and having first apertures. The semiconductor device further includes a light-adjusting structure disposed on the first light-shielding layer. Moreover, the semiconductor device includes a second light-shielding layer disposed on the light-adjusting structure and having second apertures. The semiconductor device also includes first light-condensing structures covering the second apertures. The semiconductor device further includes a third light-shielding layer disposed on the first light-condensing structure and having third apertures. Furthermore, the semiconductor device includes second light-condensing structures covering the third apertures.

Abstract: There is provided a detection device using a SPAD array including a sensor array, multiple counters, a processor and a frame buffer. The sensor array includes a plurality of SPADs respectively generates an avalanche current while receiving a photon. Each counter counts a number of triggering times of the avalanche current of a corresponding SPAD within an exposure interval. The frame buffer is pre-stored with a plurality of gain calibration values corresponding to every SPAD of the sensor array. The processor accesses the gain calibration values to accordingly calibrate a counting image frame outputted by the sensor array to output a calibrated image frame.

Abstract: An imaging device includes a plurality of pixels that receives incident light entering from an object after passing through neither an imaging lens nor a pinhole, and each outputs a detection signal indicating an output pixel value modulated in accordance with an incident angle of the incident light. The imaging device is attached to a vehicle so that a light receiving surface faces a side of the vehicle, and the average of the centroids of incident angle directivities indicating directivities of the plurality of pixels with respect to the incident angle of the incident light deviates in one direction from the center of the pixel. The present technology can be applied to an electronic sideview mirror, for example.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: Provided is a light-emitting device including a light-emitting element including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, wherein, in the quantum dot layer, quantum dots each including a core, a shell covering the core, and a ligand coordinated with a surface of the shell and having defect compensation properties are layered.

Abstract: A plate-shaped component includes a transparent cover plate and a planar back element attached to the cover plate. The cover plate has a front surface facing the external environment and a back surface facing the back element. At least one surface selected from the front and back surfaces has at least one structured region, and at least one color filter layer for reflecting light within a predetermined wavelength range is arranged on the at least one surface selected from the front and back surfaces. The at least one structural region is perpendicular to the plane of the cover plate. The at least one color filter layer includes at least one refractive layer having a refractive index of greater than 2.5 in the wavelength range from 400 nm to at least 700 nm and an extinction coefficient of at least 0.2 below 450 nm and less than 0.2 above 700 nm.

Abstract: The present disclosure provides a display panel, a method for manufacturing a display panel and a display device. The display panel includes a substrate, and a light emitting element array and a quantum dot color filter array arranged on the substrate, the quantum dot color filter array is arranged on a light exiting side of the light emitting element array, and quantum dot color filters in the quantum dot color filter array correspond to light emitting elements in the light emitting element array one to one, and the display panel further includes a blocking structure arranged between the light emitting element array and the quantum dot color filter array so as to block heat dissipated by the light emitting elements from being conducted to the quantum dot color filters.

Abstract: A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.

Abstract: A solid-state imaging device includes a pixel array where pixels are arranged in a matrix. Each of the pixels includes a photoelectric conversion unit configured to generate a signal charge based on incident light, and an element isolation layer having light-shielding properties and surrounding a periphery of the photoelectric conversion unit. The element isolation layers of adjacent ones of the pixels in a row direction and a column direction are isolated from each other. A charge storage layer and a charge trapping layer are provided in each of regions between the element isolation layers of the adjacent ones of the pixels in the row direction and the column direction. The charge storage layer stores the signal charge. The charge trapping layer reduces incidence of light on the charge storage layer.

Abstract: A temperature sensor includes a first electrode, second electrode, and a pyroelectric layer between the first electrode and the second electrode. The pyroelectric layer includes a ferroelectric polymer and an ionogel.

Abstract: A superconducting nanowire photon detection array adjusts a number of the array elements, a lens array that 1) splits transmitted lights into multiple beams that equals the number of the array elements, and are converged in to a superconducting nanowire detection area; 2) a pulsed laser detects a surface of an object, transmits reflected different light pulses by the surface of the object through the lens array, and records a round-trip time of each photon; 3) collects the photons detected by each array element, takes the array elements as pixels and calculates a gray value of the pixels; and 4) plots a gray-scale image by taking the pixels as pixel points, calculates a distance between the object and the pixel points, and reconstructs a three-dimensional image of the object.

Abstract: An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.

Abstract: Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Abstract: Image sensors include a pixel die that is stacked on a logic die. The logic die includes at least one function logic element disposed on a bond side thereof, and a logic oxide array of raised logic oxide features also disposed on the bond side. The pixel die includes a pixel array disposed on a light receiving side thereof, and a pixel oxide array of raised pixel oxide features disposed on a bond side of the pixel die. A plurality of outer bonds is disposed between an outer region of the logic die and an outer region of the pixel die. A plurality of inner bonds is formed at an inner region of the image sensor between the pixel oxide array and the logic oxide array, the inner bonds being spaced apart by a plurality of fluidly connected air gaps that extend between the logic die and the pixel die.

Abstract: A manufacturing method of an image pickup apparatus for endoscope includes manufacturing an optical member in which a plurality of optical devices are stacked, and an image pickup member including an image pickup device having a light receiving surface, measuring a position of an image-forming plane on which an object image, light of which is focused by the optical member, is formed, and fixing the optical member and the image pickup member in a state where an interval is adjusted so that a measured position of the image-forming plane becomes a position of the light receiving surface by performing curing processing on a transparent resin disposed to fill an optical path between the optical member and the image pickup member.

Abstract: A light emitting device includes: a plurality of laser elements including a first laser element and a second laser element; a case enclosing the laser elements and including a light-transmissive region; and a plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first laser element and a second main lens configured to collimate or converge light emitted from the second laser element. At least a first portion of the light-transmissive region is disposed on a first imaginary line passing through a light emitting end surface of the first laser element and the first main lens, and at least a second portion of the light-transmissive region is disposed on a second imaginary line passing through a light emitting end surface of the second laser element and the second main lens.

Abstract: A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.

Abstract: A photonic integrated circuit includes a substrate, an interconnection layer, and a plurality of silicon waveguides. The interconnection layer is over the substrate. The interconnection layer includes a seal ring structure and an interconnection structure surrounded by the seal ring structure. The seal ring structure has at least one recess from a top view. The recess concaves towards the interconnection structure. The silicon waveguides are embedded in the substrate.

Abstract: An optical system for facilitating plant growth can include one or more light sources operable to produce a light density distribution having a central portion and a peripheral portion. The light density distribution having a central portion has a lower light density than the peripheral portion, thereby producing a substantially non-uniform light density distribution.

Abstract: A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.

Abstract: The present disclosure relates to an image sensor including a plurality of pixels formed in and on a semiconductor substrate and arranged in a matrix with N rows and M columns, with N being an integer greater than or equal to 1 and M an integer greater than or equal to 2. A plurality of microlenses face the substrate, and each of the microlenses is associated with a respective pixel. The microlenses are arranged in a matrix in N rows and M columns, and the pitch of the microlens matrix is greater than the pitch of the pixel matrix in a direction of the rows of the pixel matrix.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a target etching layer; sequentially forming an initial mask layer, an anti-reflection layer, and a patterned structure on the target etching layer; performing a first etching process on the anti-reflection layer to remove a surface portion of the anti-reflection layer using the patterned structure as a mask; performing a surface treatment process on the patterned structure; and performing a second etching process on the anti-reflection layer until exposing a surface of the initial mask layer.

Abstract: A fast optical (with or without a photonic crystal) switch is fabricated/constructed, utilizing a phase transition material/Mott insulator, activated by either an electrical pulse (a voltage pulse or a current pulse) and/or a light pulse and/or pulses in terahertz (THz) frequency of a suitable field strength and/or hot electrons. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with (a) a light slowing/light stopping component (based on metamaterials and/or nanoplasmonic structures) and (b) with or without a wavelength converter are also described.

Abstract: An image sensor including contiguous color filters is disclosed. The image sensor includes a grid disposed between color filters, a first reflective layer disposed over an upper portion of the grid and patterned to include first reflective structures at borders between adjacent sensor pixels to reflect light, and a second reflective layer disposed over and spaced from the first reflective layer and patterned to include second reflective structures at borders between adjacent sensor pixels to reflect light, and each second reflective structure formed in an angular shape to direct reflected light incident to borders between adjacent sensor pixels into adjacent sensor pixels.

Abstract: The present disclosure relates to an imaging element, a fabrication method, and electronic equipment by which an image having higher picture quality can be imaged. The imaging element includes a first light absorbing film formed in an effective pixel peripheral region, the effective pixel peripheral region being provided so as to enclose an outer side of an effective pixel region in which a plurality of pixels is disposed in a matrix, so as to cover a semiconductor substrate, a microlens layer provided as an upper layer than the first light absorbing film and having a microlens formed so as to condense light for each of the pixels in the effective pixel region, and a second light absorbing film provided as an upper layer than the microlens layer and formed in the effective pixel peripheral region. The present technology can be applied, for example, to a CMOS image sensor.

Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Abstract: A method of fabricating CMOS image sensors is disclosed. In contrast to traditional fabrication processes, the present sequence implants dopants into the epitaxial layer from both the first surface and the second surface. Because dopant is introduced through both sides, the maximum implant energy to perform the implant may be reduced by as much as 50%. In certain embodiments, the second implant is performed prior to the application of the electrical contacts. In another embodiments, the second implant is performed after the application of the electrical contacts. This method may allow deeper photodiodes to be fabricated using currently available semiconductor processing equipment than would otherwise be possible.

Abstract: A light emitting device includes: a plurality of light emitting elements including a first light emitting element and a second light emitting element; a case enclosing the light emitting elements and comprising a light-transmissive region; a plurality of main lenses, each covering a portion of the light-transmissive region, the plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first light emitting element and a second main lens configured to collimate or converge light emitted from the second light emitting element; and a plurality of sub-lenses disposed in the case, the plurality of sub-lenses including a first sub-lens located in an optical path between the first light emitting element and the first main lens, and a second sub-lens located in an optical path between the second light emitting element and the second main lens.

Abstract: The misalignment between light reception lenses and light reception elements in a lens integrated light reception element for converting a plurality of optical signals with different wavelengths into electric signals is easily inspected. The lens integrated light reception element includes one or more light reception lenses that receive the optical signals, one or more light reception elements each disposed on a main axis of the light reception lens and converting the optical signal into the electric signal, one or more inspection pinholes through which illumination light passes, and one or more inspection lenses each including a main axis parallel to the main axis of the light reception lens and converging the illumination light having passed through the inspection pinhole.

Abstract: Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Abstract: Disclosed are a near-infrared absorbing composition, an optical structure, and a camera module and an electronic device including the same. The near-infrared absorbing composition includes a copper salt capable of absorbing light in a near-infrared wavelength region and an amine compound, wherein the amine compound includes a first amine compound having no polymerizable functional group and a second amine compound including at least monofunctional polymerizable functional group.

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

Abstract: A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.