Abstract: An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.

Abstract: Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Abstract: Image sensors include a pixel die that is stacked on a logic die. The logic die includes at least one function logic element disposed on a bond side thereof, and a logic oxide array of raised logic oxide features also disposed on the bond side. The pixel die includes a pixel array disposed on a light receiving side thereof, and a pixel oxide array of raised pixel oxide features disposed on a bond side of the pixel die. A plurality of outer bonds is disposed between an outer region of the logic die and an outer region of the pixel die. A plurality of inner bonds is formed at an inner region of the image sensor between the pixel oxide array and the logic oxide array, the inner bonds being spaced apart by a plurality of fluidly connected air gaps that extend between the logic die and the pixel die.

Abstract: A manufacturing method of an image pickup apparatus for endoscope includes manufacturing an optical member in which a plurality of optical devices are stacked, and an image pickup member including an image pickup device having a light receiving surface, measuring a position of an image-forming plane on which an object image, light of which is focused by the optical member, is formed, and fixing the optical member and the image pickup member in a state where an interval is adjusted so that a measured position of the image-forming plane becomes a position of the light receiving surface by performing curing processing on a transparent resin disposed to fill an optical path between the optical member and the image pickup member.

Abstract: A light emitting device includes: a plurality of laser elements including a first laser element and a second laser element; a case enclosing the laser elements and including a light-transmissive region; and a plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first laser element and a second main lens configured to collimate or converge light emitted from the second laser element. At least a first portion of the light-transmissive region is disposed on a first imaginary line passing through a light emitting end surface of the first laser element and the first main lens, and at least a second portion of the light-transmissive region is disposed on a second imaginary line passing through a light emitting end surface of the second laser element and the second main lens.

Abstract: A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.

Abstract: A photonic integrated circuit includes a substrate, an interconnection layer, and a plurality of silicon waveguides. The interconnection layer is over the substrate. The interconnection layer includes a seal ring structure and an interconnection structure surrounded by the seal ring structure. The seal ring structure has at least one recess from a top view. The recess concaves towards the interconnection structure. The silicon waveguides are embedded in the substrate.

Abstract: An optical system for facilitating plant growth can include one or more light sources operable to produce a light density distribution having a central portion and a peripheral portion. The light density distribution having a central portion has a lower light density than the peripheral portion, thereby producing a substantially non-uniform light density distribution.

Abstract: A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.

Abstract: The present disclosure relates to an image sensor including a plurality of pixels formed in and on a semiconductor substrate and arranged in a matrix with N rows and M columns, with N being an integer greater than or equal to 1 and M an integer greater than or equal to 2. A plurality of microlenses face the substrate, and each of the microlenses is associated with a respective pixel. The microlenses are arranged in a matrix in N rows and M columns, and the pitch of the microlens matrix is greater than the pitch of the pixel matrix in a direction of the rows of the pixel matrix.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a target etching layer; sequentially forming an initial mask layer, an anti-reflection layer, and a patterned structure on the target etching layer; performing a first etching process on the anti-reflection layer to remove a surface portion of the anti-reflection layer using the patterned structure as a mask; performing a surface treatment process on the patterned structure; and performing a second etching process on the anti-reflection layer until exposing a surface of the initial mask layer.

Abstract: A fast optical (with or without a photonic crystal) switch is fabricated/constructed, utilizing a phase transition material/Mott insulator, activated by either an electrical pulse (a voltage pulse or a current pulse) and/or a light pulse and/or pulses in terahertz (THz) frequency of a suitable field strength and/or hot electrons. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with (a) a light slowing/light stopping component (based on metamaterials and/or nanoplasmonic structures) and (b) with or without a wavelength converter are also described.

Abstract: An image sensor including contiguous color filters is disclosed. The image sensor includes a grid disposed between color filters, a first reflective layer disposed over an upper portion of the grid and patterned to include first reflective structures at borders between adjacent sensor pixels to reflect light, and a second reflective layer disposed over and spaced from the first reflective layer and patterned to include second reflective structures at borders between adjacent sensor pixels to reflect light, and each second reflective structure formed in an angular shape to direct reflected light incident to borders between adjacent sensor pixels into adjacent sensor pixels.

Abstract: The present disclosure relates to an imaging element, a fabrication method, and electronic equipment by which an image having higher picture quality can be imaged. The imaging element includes a first light absorbing film formed in an effective pixel peripheral region, the effective pixel peripheral region being provided so as to enclose an outer side of an effective pixel region in which a plurality of pixels is disposed in a matrix, so as to cover a semiconductor substrate, a microlens layer provided as an upper layer than the first light absorbing film and having a microlens formed so as to condense light for each of the pixels in the effective pixel region, and a second light absorbing film provided as an upper layer than the microlens layer and formed in the effective pixel peripheral region. The present technology can be applied, for example, to a CMOS image sensor.

Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Abstract: A method of fabricating CMOS image sensors is disclosed. In contrast to traditional fabrication processes, the present sequence implants dopants into the epitaxial layer from both the first surface and the second surface. Because dopant is introduced through both sides, the maximum implant energy to perform the implant may be reduced by as much as 50%. In certain embodiments, the second implant is performed prior to the application of the electrical contacts. In another embodiments, the second implant is performed after the application of the electrical contacts. This method may allow deeper photodiodes to be fabricated using currently available semiconductor processing equipment than would otherwise be possible.

Abstract: A light emitting device includes: a plurality of light emitting elements including a first light emitting element and a second light emitting element; a case enclosing the light emitting elements and comprising a light-transmissive region; a plurality of main lenses, each covering a portion of the light-transmissive region, the plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first light emitting element and a second main lens configured to collimate or converge light emitted from the second light emitting element; and a plurality of sub-lenses disposed in the case, the plurality of sub-lenses including a first sub-lens located in an optical path between the first light emitting element and the first main lens, and a second sub-lens located in an optical path between the second light emitting element and the second main lens.

Abstract: The misalignment between light reception lenses and light reception elements in a lens integrated light reception element for converting a plurality of optical signals with different wavelengths into electric signals is easily inspected. The lens integrated light reception element includes one or more light reception lenses that receive the optical signals, one or more light reception elements each disposed on a main axis of the light reception lens and converting the optical signal into the electric signal, one or more inspection pinholes through which illumination light passes, and one or more inspection lenses each including a main axis parallel to the main axis of the light reception lens and converging the illumination light having passed through the inspection pinhole.

Abstract: Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Abstract: Disclosed are a near-infrared absorbing composition, an optical structure, and a camera module and an electronic device including the same. The near-infrared absorbing composition includes a copper salt capable of absorbing light in a near-infrared wavelength region and an amine compound, wherein the amine compound includes a first amine compound having no polymerizable functional group and a second amine compound including at least monofunctional polymerizable functional group.

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

Abstract: A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: Methods and systems for providing illumination for depth sensing are provided. In one example, an apparatus comprises an illuminator, an optical sensor, and a controller. The illuminator comprises a photonic integrated circuit (PIC) and a diffractive optical element (DOE). The PIC including a laser source and at least one waveguide including optical turning features. The at least one waveguide propagates light transmitted by the laser source along a first axis parallel to a top surface of the PIC. The optical turning features diverts the light to form collimated light beams to exit the at least one waveguide and the top surface along a second axis. The DOE can diffract and project the collimated light beams. The optical sensor can detect the collimated light beams reflected off an object. The controller can determine a depth of the object with respect to the apparatus based on the detection.

Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.

Abstract: A semiconductor light receiving element of back-illuminated type comprises a light absorbing portion formed in the vicinity of the main surface of the semiconductor substrate transparent to the incident light, and a first convex lens portion larger than the light absorbing portion and having a radius of curvature R1 formed on a back surface of the semiconductor substrate, a second convex lens portion smaller than the light absorbing portion and having a radius of curvature R2 smaller than the radius of curvature R1; the second convex lens portion formed on the first convex lens portion and having a focal point between the second convex lens portion and the light absorbing portion; light incident on the second convex lens portion is diffused from the focal point toward the light absorbing portion.

Abstract: Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.

Abstract: A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and a metal-less reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and metal-less reflector/electrode back contact (R/EBC) serves (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (R/EBC) contact and (2) to provide optical impedance matching for the short wavelength incoming light. The metal-less reflector/back electrode operates as a back light reflector and counter electrode to the periodic array of dome or dome-like structures. A substrate supports the metal-less reflector/back electrode.

Abstract: A semiconductor device package includes a semiconductor device, an optical conductive pillar, a first encapsulant and a second encapsulant. The semiconductor device includes a pixel. The optical conductive pillar is disposed on the pixel. The first encapsulant has a first thickness and encapsulates the optical conductive pillar. The second encapsulant has a second thickness different from the first thickness.

Abstract: An image sensor include a semiconductor substrate, a first epitaxial layer, a second epitaxial layer, a plurality of photodiodes, and a plurality of pixel isolation structures. The first epitaxial layer is formed on the semiconductor substrate, and the second epitaxial layer is formed on the first epitaxial layer. Each photodiode includes a first diffusion region formed in the first epitaxial layer and a second diffusion region formed in the second epitaxial layer. The second diffusion region is extended through the second epitaxial layer and electrically coupled to the first diffusion region. Each pixel isolation structure include a first isolation structure formed between adjacent first diffusion regions in the first epitaxial layer and a second isolation structure formed between adjacent second diffusion regions in the second epitaxial layer. The second isolation structure is extended through the second epitaxial layer to connect to the first isolation structure.

Abstract: A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line.

Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.

Abstract: A plasmonic structure having an identifier pattern indicating a genuine product for preventing counterfeiting, falsification or reuse, includes a metal layer; a photoconversion pattern layer including a plurality of photoconverting nanoparticles disposed in a pattern on and in direct contact with the metal layer; a metal pattern layer including a plurality of metal particles disposed in a pattern on and in direct contact with the photoconversion pattern layer; and an adhesive film disposed on the metal pattern layer. An identifier pattern indicating a genuine product is easily identified even by visual inspection after irradiation with infrared light irradiation. The plasmonic structure is fundamentally impossible to re-assemble after deformation of the plasmonic structure caused by disassembly of a product or packaging container, thereby preventing counterfeiting, falsification or reuse.

Abstract: An organic light emitting diode display that maintains a luminance distribution characteristic of each pixel at the side substantially similar to a luminance distribution characteristic of each pixel at the front of the OLED display by improving a twist of a lateral color with respect to a front color. The organic light emitting diode display includes a substrate, a driving wire disposed on the substrate, a color filter disposed on the driving wire. The color filter includes a blue color filter, a red color filter, and a green color filter formed on the driving wire; and an organic light emitting diode disposed on the color filter, where a recess portion is defined at a lower surface of the blue color filter, and a convex portion is defined at a lower surface of the red color filter or the green color filter.

Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Abstract: There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.

Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.

Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Abstract: An image pickup device according to the present disclosure includes a first pixel and a second pixel each including a photodetection section and a light condensing section, the photodetection section including a photoelectric conversion element, the light condensing section condensing incident light toward the photodetection section, the first pixel and the second pixel being adjacent to each other and each having a step part on a photodetection surface of the photodetection section, in which at least a part of a wall surface of the step part is covered with a first light shielding section.

Abstract: A photoelectric conversion element is realized in which the movement direction of electrons in the element changes according to the wavelength of light to be converted. A photoelectric conversion unit includes an active layer on which light to be converted is incident, an intermediate layer that is arranged on the active layer on a side opposite to the side on which the light to be converted is incident, and a reflection layer that is arranged so as to oppose the active layer with the intermediate layer interposed therebetween. The active layer includes a plasmonic material, which is a material in which plasmon resonance occurs due to a reciprocal action with the light to be converted. The intermediate layer has both a semiconductor property and transparency with respect to the light to be converted. The reflection layer has reflectivity with respect to the light to be converted.

Abstract: A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.

Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

Abstract: A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eoxD, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.

Abstract: Provided is a method that can manufacture a light-emitting device in which quantum dot is used and which has a high luminous efficiency. A light-emitting device (1) is manufactured that includes: a cell (10) including first and second glass plates (11, 12) facing and spaced apart from each other; and quantum dot (17) encapsulated in the cell (10). Prior to the encapsulation of the quantum dot (17), a reduction step of reducing moisture adsorbed on the inside walls of the cell (10) is performed.