Including Integrally Formed Optical Element (e.g., Reflective Layer, Luminescent Layer, Etc.) Patents (Class 438/69)
  • Patent number: 10790322
    Abstract: An image sensor include a semiconductor substrate, a first epitaxial layer, a second epitaxial layer, a plurality of photodiodes, and a plurality of pixel isolation structures. The first epitaxial layer is formed on the semiconductor substrate, and the second epitaxial layer is formed on the first epitaxial layer. Each photodiode includes a first diffusion region formed in the first epitaxial layer and a second diffusion region formed in the second epitaxial layer. The second diffusion region is extended through the second epitaxial layer and electrically coupled to the first diffusion region. Each pixel isolation structure include a first isolation structure formed between adjacent first diffusion regions in the first epitaxial layer and a second isolation structure formed between adjacent second diffusion regions in the second epitaxial layer. The second isolation structure is extended through the second epitaxial layer to connect to the first isolation structure.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: September 29, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Qin Wang, Gang Chen
  • Patent number: 10790323
    Abstract: A semiconductor device package includes a semiconductor device, an optical conductive pillar, a first encapsulant and a second encapsulant. The semiconductor device includes a pixel. The optical conductive pillar is disposed on the pixel. The first encapsulant has a first thickness and encapsulates the optical conductive pillar. The second encapsulant has a second thickness different from the first thickness.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: September 29, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: Yu-Min Peng
  • Patent number: 10685991
    Abstract: A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: June 16, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuki Fujita, Ryuji Kyushima, Harumichi Mori
  • Patent number: 10566365
    Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: February 18, 2020
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Li-Wei Chen, Chi-Han Lin, Zong-Ru Tu
  • Patent number: 10532596
    Abstract: A plasmonic structure having an identifier pattern indicating a genuine product for preventing counterfeiting, falsification or reuse, includes a metal layer; a photoconversion pattern layer including a plurality of photoconverting nanoparticles disposed in a pattern on and in direct contact with the metal layer; a metal pattern layer including a plurality of metal particles disposed in a pattern on and in direct contact with the photoconversion pattern layer; and an adhesive film disposed on the metal pattern layer. An identifier pattern indicating a genuine product is easily identified even by visual inspection after irradiation with infrared light irradiation. The plasmonic structure is fundamentally impossible to re-assemble after deformation of the plasmonic structure caused by disassembly of a product or packaging container, thereby preventing counterfeiting, falsification or reuse.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: January 14, 2020
    Assignee: Korea Institute of Science and Technology
    Inventors: Hyungduk Ko, Kisun Park, Ho Seong Jang, Il Ki Han
  • Patent number: 10504970
    Abstract: An organic light emitting diode display that maintains a luminance distribution characteristic of each pixel at the side substantially similar to a luminance distribution characteristic of each pixel at the front of the OLED display by improving a twist of a lateral color with respect to a front color. The organic light emitting diode display includes a substrate, a driving wire disposed on the substrate, a color filter disposed on the driving wire. The color filter includes a blue color filter, a red color filter, and a green color filter formed on the driving wire; and an organic light emitting diode disposed on the color filter, where a recess portion is defined at a lower surface of the blue color filter, and a convex portion is defined at a lower surface of the red color filter or the green color filter.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: December 10, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Min-Woo Kim, Jae-Ik Lim, Man-Seob Choi, Won-Gyun Kim, Won-Sang Park
  • Patent number: 10326039
    Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: June 18, 2019
    Assignee: STMICROELECTRONICS (SHENZHEN) R&D CO., LTD.
    Inventor: Jing-En Luan
  • Patent number: 10217785
    Abstract: There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: February 26, 2019
    Assignee: Sony Corporation
    Inventor: Kunihiko Izuhara
  • Patent number: 10177185
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: January 8, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Hsin-Chieh Huang, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Patent number: 10141471
    Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: November 27, 2018
    Assignee: STMICROELECTRONICS (SHENZHEN) R&D CO., LTD.
    Inventor: Jing-En Luan
  • Patent number: 10026773
    Abstract: An image pickup device according to the present disclosure includes a first pixel and a second pixel each including a photodetection section and a light condensing section, the photodetection section including a photoelectric conversion element, the light condensing section condensing incident light toward the photodetection section, the first pixel and the second pixel being adjacent to each other and each having a step part on a photodetection surface of the photodetection section, in which at least a part of a wall surface of the step part is covered with a first light shielding section.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: July 17, 2018
    Assignee: Sony Corporation
    Inventors: Takeshi Yanagita, Suguru Saito, Kaoru Koike
  • Patent number: 9983062
    Abstract: A photoelectric conversion element is realized in which the movement direction of electrons in the element changes according to the wavelength of light to be converted. A photoelectric conversion unit includes an active layer on which light to be converted is incident, an intermediate layer that is arranged on the active layer on a side opposite to the side on which the light to be converted is incident, and a reflection layer that is arranged so as to oppose the active layer with the intermediate layer interposed therebetween. The active layer includes a plasmonic material, which is a material in which plasmon resonance occurs due to a reciprocal action with the light to be converted. The intermediate layer has both a semiconductor property and transparency with respect to the light to be converted. The reflection layer has reflectivity with respect to the light to be converted.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: May 29, 2018
    Assignee: IMRA JAPAN KABUSHIKI KAISHA
    Inventors: Vu Chung Hoang, Koki Hayashi, Yasuo Ito
  • Patent number: 9976220
    Abstract: A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: May 22, 2018
    Assignee: California Institute of Technology
    Inventors: Shu Hu, Nathan S. Lewis
  • Patent number: 9825259
    Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: November 21, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Seong Min Wang, Jung Gun Nam, Byeong Hoon Cho, Mu Gyeom Kim
  • Patent number: 9812615
    Abstract: A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eoxD, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: November 7, 2017
    Assignees: STMicroelectronics SA, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Laurent Frey, Michel Marty
  • Patent number: 9691937
    Abstract: Provided is a method that can manufacture a light-emitting device in which quantum dot is used and which has a high luminous efficiency. A light-emitting device (1) is manufactured that includes: a cell (10) including first and second glass plates (11, 12) facing and spaced apart from each other; and quantum dot (17) encapsulated in the cell (10). Prior to the encapsulation of the quantum dot (17), a reduction step of reducing moisture adsorbed on the inside walls of the cell (10) is performed.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: June 27, 2017
    Assignee: NIPPON ELECTRIC GLASS CO., LTD.
    Inventors: Masaaki Kadomi, Hideki Asano, Takashi Nishimiya
  • Patent number: 9670532
    Abstract: A chemical sensor including a substrate, an on-chip lens layer, and a flattening layer. On the substrate, a plurality of photodiodes are formed and arranged in a planar form. The on-chip lens layer collects incident light to the photodiodes and is provided on the substrate. The flattening layer covers and planarizes the on-chip lens to form a probe holding surface for holding a probe material.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: June 6, 2017
    Assignee: SONY CORPORATION
    Inventors: Nobuyuki Matsuzawa, Kensaku Maeda, Yusuke Moriya, Ken Ozawa
  • Patent number: 9640707
    Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: May 2, 2017
    Assignee: LG ELECTRONICS INC.
    Inventors: Jinsung Kim, Daeyong Lee
  • Patent number: 9490288
    Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: November 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Feng-Chien Hsieh, Shih-Ciang Huang, Volume Chien, Zhe-Ju Liu, Wang Chun-Ying, Chi-Cherng Jeng, Chen Hsin-Chi
  • Patent number: 9466753
    Abstract: Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: October 11, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: John J. Ellis-Monaghan, John C. S. Hall, Marwan H. Khater, Edward W. Kiewra, Steven M. Shank
  • Patent number: 9466639
    Abstract: A method of manufacturing a solid-state imaging apparatus, comprising preparing a substrate on which photoelectric conversion portions are arranged, forming inner lenses corresponding to the photoelectric conversion portions, and forming microlenses corresponding to the photoelectric conversion portions, wherein the forming inner lenses includes forming, on the substrate, a dielectric film for forming the plurality of inner lenses, and etching second portions of the dielectric film around first portions serving as central portions of the inner lenses while leaving upper faces of the first portions, so as to form curved faces or inclined faces connected to the upper faces.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: October 11, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Yusuke Tsukagoshi
  • Patent number: 9397249
    Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: July 19, 2016
    Assignee: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol Ahn
  • Patent number: 9331119
    Abstract: A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion elements includes an electrode electrically connected to a corresponding one of a plurality of switching elements and a semiconductor layer disposed on the electrode. The interlayer insulating layer is disposed so as to cover the plurality of switching elements and composed of an organic material, and has a surface including a first region and a second region located outside the first region. The electrodes are disposed on the surface of the interlayer insulating layer in the first region. The covering layer is disposed on the surface of the interlayer insulating layer in the second region and composed of an inorganic material.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: May 3, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kentaro Fujiyoshi, Minoru Watanabe, Keigo Yokoyama, Masato Ofuji, Jun Kawanabe, Hiroshi Wayama
  • Patent number: 9324755
    Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Bond pad structures may be formed on the surface of the image sensor die and may be coupled to off-chip circuitry via bonding wires soldered to the bad pad structures. Color filter elements may be formed over active image sensor pixels on the image sensor die. Microlens structures may be formed over the color filter elements. An antireflective coating (ARC) liner may be simultaneously formed over the microlens structures and over the bond pad structures to passivate the bond pad structures.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: April 26, 2016
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Swarnal Borthakur, Marc Sulfridge, Mitchell J. Mooney
  • Patent number: 9276051
    Abstract: A light-emitting element display device includes a substrate, one or a plurality of thin film transistors, a light-emitting element, a first electrode, and a second electrode. The substrate includes an insulating material. The thin film transistors are in each pixel of a display area on the substrate. The light-emitting element emits light by current flow in each pixel. The first electrode is between the substrate and the thin film transistors, and overlaps at least two of the thin film transistors when viewed in plan. The second electrode includes a conducting material, and is arranged across the first electrode from the substrate via an insulating film so as to form a capacitor together with the first electrode.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: March 1, 2016
    Assignee: Japan Display Inc.
    Inventor: Toshihiro Sato
  • Patent number: 9240431
    Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: January 19, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Chih-Wei Hsiung, Arvind Kumar
  • Patent number: 9213451
    Abstract: Improved techniques are disclosed for fabrication of touch panels using thin sheet glass, coupling external circuitry, and securely holding the touch panel within a portable electronic device. The thin sheet glass may be chemically strengthened and laser scribed.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: December 15, 2015
    Assignee: Apple Inc.
    Inventors: Silvio Grespan, Casey Feinstein, Kuo-Hua Sung, John Z. Zhong
  • Patent number: 9176360
    Abstract: A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and a bottom portion of the first core layer; forming a protective mask covering the side surface; etching the bottom portion using the protective mask to form a top mesa; and forming a bottom mesa by etching the second core layer using a second mask. The top mesa includes the first core layer and a portion having a mesa width gradually reduced in a first direction of a waveguide axis. The bottom mesa includes the second core layer and a portion having a mesa width gradually reduced in a second direction opposite to the first direction.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: November 3, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hideki Yagi, Naoko Konishi, Takamitsu Kitamura, Naoya Kono
  • Patent number: 9110176
    Abstract: Provided is a radiation detecting element, including: needle crystal scintillators and a protruding pattern in which: one end of the needle crystal scintillators is in contact with of upper surfaces of the multiple protrusions; a gap corresponding to a gap between the multiple protrusions is provided between portions of the needle crystal scintillators in contact with the upper surfaces of the multiple protrusions; and a number of the needle crystal scintillators in contact with one of the upper surfaces is 5 or less. Conventionally, since the needle crystals exhibit a state of a polycrystalline film in an early stage of vapor deposition, and light also spreads in a horizontal direction, the light received by a photodetector portion and the spatial resolution was lower than ideal values. The present invention enables the deviating region to be the ideal state in an early stage of growth.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: August 18, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tomoyuki Oike, Nobuhiro Yasui, Toru Den, Yoshihiro Ohashi, Ryoko Horie
  • Patent number: 9093577
    Abstract: In an image sensor in which each microlens of a microlens array is disposed at a position corresponding to each pixel on a side to which light flux is incident, a layer formed of a member different from a member constituting the microlens array is disposed on the side of the microlens array to which light flux is incident, and a surface of the layer formed of the different member has a phase structure optically-opposite to that of the microlens array.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: July 28, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kenichi Sasaki
  • Patent number: 9048162
    Abstract: A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: June 2, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Hsiao-Hui Tseng, Tzu-Hsuan Hsu
  • Publication number: 20150144796
    Abstract: Embodiments relate to detector imaging arrays with scintillators (e.g., scintillating phosphor screens) mounted to imaging arrays or radiographic detectors using the same. For example, the detector imaging arrays can include a scintillator, an imaging array comprising imaging pixels, where each imaging pixel comprises at least one readout element and one photosensor; and a first dielectric layer formed between the scintillator and the imaging layer, wherein the dielectric constant of the insulating layer is very low. Embodiments according to the application can include a second dielectric layer formed over at least a portion of the non-photosensitive regions of the array and/or a first dielectric layer, each with a dielectric constant.
    Type: Application
    Filed: February 28, 2012
    Publication date: May 28, 2015
    Inventor: Timothy J. Tredwell
  • Publication number: 20150144182
    Abstract: A solar cell includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, a high resistance buffer layer on the buffer layer, and a front electrode layer on the high resistance buffer layer. An insulating part is located on a top surface of the light absorbing layer. A method of fabricating the solar cell includes forming the back electrode layer on the substrate, forming the light absorbing layer on the back electrode layer, forming the buffer layer on the light absorbing layer, oxidizing a top surface of the buffer layer, and forming the front electrode layer on the buffer layer.
    Type: Application
    Filed: June 5, 2013
    Publication date: May 28, 2015
    Inventor: Se Han Kwon
  • Publication number: 20150138553
    Abstract: A device for detecting a surface plasmon and polarization includes: a topological insulating layer formed on a substrate; first and second electrodes formed on the topological insulating layer; and a waveguide connected to the topological insulating layer between the first and second electrodes.
    Type: Application
    Filed: May 12, 2014
    Publication date: May 21, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hee-jeong JEONG, Chang-won LEE, Sang-mo CHEON
  • Publication number: 20150139397
    Abstract: Some embodiments include an imaging system. The image sensor array includes multiple image sensor sheets configured in an array grid. Each image sensor sheet of the multiple image sensor sheets can include a flexible substrate layer, and the flexible substrate layer can include a first flexible substrate side and a second flexible substrate side opposite the first flexible substrate side. Meanwhile, each image sensor sheet of the multiple sensor sheets can include multiple image sensors over the first flexible substrate side, the multiple image sensors can include multiple flat panel image detectors configured in a sheet grid, and the image sensor array can include an approximately constant pixel pitch. Other embodiments of related systems and methods are also disclosed.
    Type: Application
    Filed: December 12, 2014
    Publication date: May 21, 2015
    Applicant: Arizona Board of Regents, a body corporate of the State of Arizona, Acting on behalf of Arizona Stat
    Inventors: Joseph T. Smith, John Stowell
  • Publication number: 20150136210
    Abstract: Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous).
    Type: Application
    Filed: May 10, 2013
    Publication date: May 21, 2015
    Inventors: Xavier Multone, Daniel Borrello, Stefano Benagli, Johannes Meier, Ulrich Kroll, Marian Fecioru-Morariu
  • Patent number: 9035311
    Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Keon Park, Tae-Hoon Yang, Jin-Wook Seo, Soo-Beom Jo, Dong-Hyun Lee, Kil-Won Lee, Maxim Lisachenko, Yun-Mo Chung, Bo-Kyung Choi, Jong-Ryuk Park, Ki-Yong Lee
  • Patent number: 9035286
    Abstract: A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: May 19, 2015
    Assignee: AU Optronics Corporation
    Inventors: Kuei-Bai Chen, Chia-Hao Li, Chen-Hsien Liao
  • Patent number: 9036067
    Abstract: A solid-state imaging device includes a photodetector which is formed on a substrate and is configured to generate signal charge by photoelectric conversion, a floating diffusion configured to receive the signal charge generated by the photodetector, a plurality of MOS transistors including a transfer transistor that transfers the signal charge to the floating diffusion and an amplification transistor that outputs an pixel signal corresponding to a potential of the floating diffusion, a multi-wiring layer which is formed in a layer higher than the substrate and is composed of a plurality of wiring layers electrically connected to the MOS transistors via contact portions, and a light-shielding film that is constituted by a bottom wiring layer disposed in a layer higher than the substrate and lower than the multi-wiring layer.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: May 19, 2015
    Assignee: SONY CORPORATION
    Inventor: Tadayuki Taura
  • Publication number: 20150130006
    Abstract: An image sensor includes first to fourth microlenses. A first height difference between a first valley between the first and second microlenses and tops of the first and second microlenses is larger than a second height difference between a second valley between the third and fourth microlenses and tops of the third and fourth microlens, a first angle formed by a tangent in an outermost portion of the first microlens, which contacts the first valley and a plane perpendicular to the normal is equal to or smaller than a second angle formed by a tangent in an outermost portion of the third microlens, which contacts the second valley and the plane.
    Type: Application
    Filed: November 5, 2014
    Publication date: May 14, 2015
    Inventor: Kosei Uehira
  • Publication number: 20150132872
    Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.
    Type: Application
    Filed: April 26, 2013
    Publication date: May 14, 2015
    Inventors: Juergen Bauer, Gerhard Doell, Klaus-Dieter Bauer, Philipp Erhard, Frank Vollkommer
  • Publication number: 20150124140
    Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
    Type: Application
    Filed: January 9, 2015
    Publication date: May 7, 2015
    Inventors: Tomohiro Ohkubo, Suzunori Endo
  • Patent number: 9023677
    Abstract: A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: May 5, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Naoko Konishi, Hideki Yagi, Ryuji Masuyama, Yoshihiro Yoneda
  • Patent number: 9024401
    Abstract: The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: May 5, 2015
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Frank Hochschulz, Stefan Dreiner, Uwe Paschen, Holger Vogt
  • Publication number: 20150114466
    Abstract: A CIGS solar cell having a flexible substrate based on improved supply of Na. The CIGS solar cell includes a substrate formed of a flexible material, a rear electrode formed on the substrate, a CIGS light-absorption layer formed on the rear electrode, a buffer layer formed on the CIGS light-absorption layer, and a front electrode formed on the buffer layer, wherein the rear electrode comprise a single-layered Na-added metal electrode layer. A single-layered Na-added Mo electrode layer, specific resistance of which is about 1/10th the specific resistance under conditions of a process of forming a typical multilayer rear electrode, is applied to the rear electrode, thereby providing a CIGS solar cell having a flexible substrate and high conversion efficiency.
    Type: Application
    Filed: August 5, 2013
    Publication date: April 30, 2015
    Inventors: SeoungKyu Ahn, Kyung Hoon Yoon, Jae Ho Yun, Jun Sik Cho, SeJin Ahn, Jihye Gwak, Kee Shik Shin, Kihwan Kim, Joo Hyung Park, Young Joo Eo, Jin-Su Yoo, Ara Cho
  • Publication number: 20150114461
    Abstract: Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a first back electrode layer on a support substrate; a second back electrode layer on the first back electrode layer; a light absorbing layer on the second back electrode layer; and a front electrode layer on the light absorbing layer.
    Type: Application
    Filed: November 26, 2012
    Publication date: April 30, 2015
    Inventor: Jong Hyun Kim
  • Publication number: 20150108596
    Abstract: A method of forming a photonic device and resulting structure are described in which the photonic device is epitaxially grown over a substrate surface vertically, and laterally over trench isolation regions formed in the substrate surface.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Roy Meade
  • Publication number: 20150109501
    Abstract: A back-side illumination solid-state imaging apparatus, comprising a light-shielding member including a plurality of openings, and a plurality of pixels corresponding to the plurality of openings, wherein each pixel includes a photoelectric conversion portion, a microlens and an inner lens, the inner lens of a first pixel of an Mth row×an Nth column and the inner lens of a second pixel of an (M+1)th row×an (N+1)th column are separated from each other through a dielectric member, and the dielectric member contacts with part of the light-shielding member between a first opening corresponding to the first pixel and a second opening corresponding to the second pixel.
    Type: Application
    Filed: September 26, 2014
    Publication date: April 23, 2015
    Inventor: Yasuhiro Sekine
  • Publication number: 20150107649
    Abstract: A solar panel includes a solar cell assembly formed of at least two solar cells arranged adjacent to one another, the cells each having a solar-facing surface, a gap area between them and patterned with busbars on their solar-facing surface. The solar-facing surface includes active regions and inactive regions and is covered by a layer of transparent material having an inner side and an outer side, the inner side disposed adjacent to the solar facing surface of the assembly and the outer side defining an outer surface of the panel. At least one optical member is disposed on the outer side of the layer and configured to substantially cover at least a portion of the inactive regions of the solar-facing surface and to deflect solar radiation impinging upon the optical member away from the inactive regions and onto the active regions of the solar-facing surface of the cell.
    Type: Application
    Filed: March 11, 2013
    Publication date: April 23, 2015
    Inventor: Ze'ev R. ABRAMS
  • Publication number: 20150102446
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.
    Type: Application
    Filed: December 17, 2014
    Publication date: April 16, 2015
    Inventor: Takayuki Enomoto