Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.

Abstract: A semiconductor light receiving element of back-illuminated type comprises a light absorbing portion formed in the vicinity of the main surface of the semiconductor substrate transparent to the incident light, and a first convex lens portion larger than the light absorbing portion and having a radius of curvature R1 formed on a back surface of the semiconductor substrate, a second convex lens portion smaller than the light absorbing portion and having a radius of curvature R2 smaller than the radius of curvature R1; the second convex lens portion formed on the first convex lens portion and having a focal point between the second convex lens portion and the light absorbing portion; light incident on the second convex lens portion is diffused from the focal point toward the light absorbing portion.

Abstract: Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.

Abstract: A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and a metal-less reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and metal-less reflector/electrode back contact (R/EBC) serves (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (R/EBC) contact and (2) to provide optical impedance matching for the short wavelength incoming light. The metal-less reflector/back electrode operates as a back light reflector and counter electrode to the periodic array of dome or dome-like structures. A substrate supports the metal-less reflector/back electrode.

Abstract: An image sensor include a semiconductor substrate, a first epitaxial layer, a second epitaxial layer, a plurality of photodiodes, and a plurality of pixel isolation structures. The first epitaxial layer is formed on the semiconductor substrate, and the second epitaxial layer is formed on the first epitaxial layer. Each photodiode includes a first diffusion region formed in the first epitaxial layer and a second diffusion region formed in the second epitaxial layer. The second diffusion region is extended through the second epitaxial layer and electrically coupled to the first diffusion region. Each pixel isolation structure include a first isolation structure formed between adjacent first diffusion regions in the first epitaxial layer and a second isolation structure formed between adjacent second diffusion regions in the second epitaxial layer. The second isolation structure is extended through the second epitaxial layer to connect to the first isolation structure.

Abstract: A semiconductor device package includes a semiconductor device, an optical conductive pillar, a first encapsulant and a second encapsulant. The semiconductor device includes a pixel. The optical conductive pillar is disposed on the pixel. The first encapsulant has a first thickness and encapsulates the optical conductive pillar. The second encapsulant has a second thickness different from the first thickness.

Abstract: A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line.

Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.

Abstract: A plasmonic structure having an identifier pattern indicating a genuine product for preventing counterfeiting, falsification or reuse, includes a metal layer; a photoconversion pattern layer including a plurality of photoconverting nanoparticles disposed in a pattern on and in direct contact with the metal layer; a metal pattern layer including a plurality of metal particles disposed in a pattern on and in direct contact with the photoconversion pattern layer; and an adhesive film disposed on the metal pattern layer. An identifier pattern indicating a genuine product is easily identified even by visual inspection after irradiation with infrared light irradiation. The plasmonic structure is fundamentally impossible to re-assemble after deformation of the plasmonic structure caused by disassembly of a product or packaging container, thereby preventing counterfeiting, falsification or reuse.

Abstract: An organic light emitting diode display that maintains a luminance distribution characteristic of each pixel at the side substantially similar to a luminance distribution characteristic of each pixel at the front of the OLED display by improving a twist of a lateral color with respect to a front color. The organic light emitting diode display includes a substrate, a driving wire disposed on the substrate, a color filter disposed on the driving wire. The color filter includes a blue color filter, a red color filter, and a green color filter formed on the driving wire; and an organic light emitting diode disposed on the color filter, where a recess portion is defined at a lower surface of the blue color filter, and a convex portion is defined at a lower surface of the red color filter or the green color filter.

Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Abstract: There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.

Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.

Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Abstract: An image pickup device according to the present disclosure includes a first pixel and a second pixel each including a photodetection section and a light condensing section, the photodetection section including a photoelectric conversion element, the light condensing section condensing incident light toward the photodetection section, the first pixel and the second pixel being adjacent to each other and each having a step part on a photodetection surface of the photodetection section, in which at least a part of a wall surface of the step part is covered with a first light shielding section.

Abstract: A photoelectric conversion element is realized in which the movement direction of electrons in the element changes according to the wavelength of light to be converted. A photoelectric conversion unit includes an active layer on which light to be converted is incident, an intermediate layer that is arranged on the active layer on a side opposite to the side on which the light to be converted is incident, and a reflection layer that is arranged so as to oppose the active layer with the intermediate layer interposed therebetween. The active layer includes a plasmonic material, which is a material in which plasmon resonance occurs due to a reciprocal action with the light to be converted. The intermediate layer has both a semiconductor property and transparency with respect to the light to be converted. The reflection layer has reflectivity with respect to the light to be converted.

Abstract: A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.

Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

Abstract: A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eoxD, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.

Abstract: Provided is a method that can manufacture a light-emitting device in which quantum dot is used and which has a high luminous efficiency. A light-emitting device (1) is manufactured that includes: a cell (10) including first and second glass plates (11, 12) facing and spaced apart from each other; and quantum dot (17) encapsulated in the cell (10). Prior to the encapsulation of the quantum dot (17), a reduction step of reducing moisture adsorbed on the inside walls of the cell (10) is performed.

Abstract: A chemical sensor including a substrate, an on-chip lens layer, and a flattening layer. On the substrate, a plurality of photodiodes are formed and arranged in a planar form. The on-chip lens layer collects incident light to the photodiodes and is provided on the substrate. The flattening layer covers and planarizes the on-chip lens to form a probe holding surface for holding a probe material.

Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.

Abstract: A method of manufacturing a solid-state imaging apparatus, comprising preparing a substrate on which photoelectric conversion portions are arranged, forming inner lenses corresponding to the photoelectric conversion portions, and forming microlenses corresponding to the photoelectric conversion portions, wherein the forming inner lenses includes forming, on the substrate, a dielectric film for forming the plurality of inner lenses, and etching second portions of the dielectric film around first portions serving as central portions of the inner lenses while leaving upper faces of the first portions, so as to form curved faces or inclined faces connected to the upper faces.

Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract: A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion elements includes an electrode electrically connected to a corresponding one of a plurality of switching elements and a semiconductor layer disposed on the electrode. The interlayer insulating layer is disposed so as to cover the plurality of switching elements and composed of an organic material, and has a surface including a first region and a second region located outside the first region. The electrodes are disposed on the surface of the interlayer insulating layer in the first region. The covering layer is disposed on the surface of the interlayer insulating layer in the second region and composed of an inorganic material.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Bond pad structures may be formed on the surface of the image sensor die and may be coupled to off-chip circuitry via bonding wires soldered to the bad pad structures. Color filter elements may be formed over active image sensor pixels on the image sensor die. Microlens structures may be formed over the color filter elements. An antireflective coating (ARC) liner may be simultaneously formed over the microlens structures and over the bond pad structures to passivate the bond pad structures.

Abstract: A light-emitting element display device includes a substrate, one or a plurality of thin film transistors, a light-emitting element, a first electrode, and a second electrode. The substrate includes an insulating material. The thin film transistors are in each pixel of a display area on the substrate. The light-emitting element emits light by current flow in each pixel. The first electrode is between the substrate and the thin film transistors, and overlaps at least two of the thin film transistors when viewed in plan. The second electrode includes a conducting material, and is arranged across the first electrode from the substrate via an insulating film so as to form a capacitor together with the first electrode.

Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

Abstract: Improved techniques are disclosed for fabrication of touch panels using thin sheet glass, coupling external circuitry, and securely holding the touch panel within a portable electronic device. The thin sheet glass may be chemically strengthened and laser scribed.

Abstract: A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and a bottom portion of the first core layer; forming a protective mask covering the side surface; etching the bottom portion using the protective mask to form a top mesa; and forming a bottom mesa by etching the second core layer using a second mask. The top mesa includes the first core layer and a portion having a mesa width gradually reduced in a first direction of a waveguide axis. The bottom mesa includes the second core layer and a portion having a mesa width gradually reduced in a second direction opposite to the first direction.

Abstract: Provided is a radiation detecting element, including: needle crystal scintillators and a protruding pattern in which: one end of the needle crystal scintillators is in contact with of upper surfaces of the multiple protrusions; a gap corresponding to a gap between the multiple protrusions is provided between portions of the needle crystal scintillators in contact with the upper surfaces of the multiple protrusions; and a number of the needle crystal scintillators in contact with one of the upper surfaces is 5 or less. Conventionally, since the needle crystals exhibit a state of a polycrystalline film in an early stage of vapor deposition, and light also spreads in a horizontal direction, the light received by a photodetector portion and the spatial resolution was lower than ideal values. The present invention enables the deviating region to be the ideal state in an early stage of growth.

Abstract: In an image sensor in which each microlens of a microlens array is disposed at a position corresponding to each pixel on a side to which light flux is incident, a layer formed of a member different from a member constituting the microlens array is disposed on the side of the microlens array to which light flux is incident, and a surface of the layer formed of the different member has a phase structure optically-opposite to that of the microlens array.

Abstract: A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.

Abstract: A solar cell includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, a high resistance buffer layer on the buffer layer, and a front electrode layer on the high resistance buffer layer. An insulating part is located on a top surface of the light absorbing layer. A method of fabricating the solar cell includes forming the back electrode layer on the substrate, forming the light absorbing layer on the back electrode layer, forming the buffer layer on the light absorbing layer, oxidizing a top surface of the buffer layer, and forming the front electrode layer on the buffer layer.

Abstract: Embodiments relate to detector imaging arrays with scintillators (e.g., scintillating phosphor screens) mounted to imaging arrays or radiographic detectors using the same. For example, the detector imaging arrays can include a scintillator, an imaging array comprising imaging pixels, where each imaging pixel comprises at least one readout element and one photosensor; and a first dielectric layer formed between the scintillator and the imaging layer, wherein the dielectric constant of the insulating layer is very low. Embodiments according to the application can include a second dielectric layer formed over at least a portion of the non-photosensitive regions of the array and/or a first dielectric layer, each with a dielectric constant.

Abstract: A device for detecting a surface plasmon and polarization includes: a topological insulating layer formed on a substrate; first and second electrodes formed on the topological insulating layer; and a waveguide connected to the topological insulating layer between the first and second electrodes.

Abstract: Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous).

Abstract: Some embodiments include an imaging system. The image sensor array includes multiple image sensor sheets configured in an array grid. Each image sensor sheet of the multiple image sensor sheets can include a flexible substrate layer, and the flexible substrate layer can include a first flexible substrate side and a second flexible substrate side opposite the first flexible substrate side. Meanwhile, each image sensor sheet of the multiple sensor sheets can include multiple image sensors over the first flexible substrate side, the multiple image sensors can include multiple flat panel image detectors configured in a sheet grid, and the image sensor array can include an approximately constant pixel pitch. Other embodiments of related systems and methods are also disclosed.

Abstract: A solid-state imaging device includes a photodetector which is formed on a substrate and is configured to generate signal charge by photoelectric conversion, a floating diffusion configured to receive the signal charge generated by the photodetector, a plurality of MOS transistors including a transfer transistor that transfers the signal charge to the floating diffusion and an amplification transistor that outputs an pixel signal corresponding to a potential of the floating diffusion, a multi-wiring layer which is formed in a layer higher than the substrate and is composed of a plurality of wiring layers electrically connected to the MOS transistors via contact portions, and a light-shielding film that is constituted by a bottom wiring layer disposed in a layer higher than the substrate and lower than the multi-wiring layer.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled.

Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.

Abstract: An image sensor includes first to fourth microlenses. A first height difference between a first valley between the first and second microlenses and tops of the first and second microlenses is larger than a second height difference between a second valley between the third and fourth microlenses and tops of the third and fourth microlens, a first angle formed by a tangent in an outermost portion of the first microlens, which contacts the first valley and a plane perpendicular to the normal is equal to or smaller than a second angle formed by a tangent in an outermost portion of the third microlens, which contacts the second valley and the plane.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.

Abstract: A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.