Forming Point Contact Patents (Class 438/83)
  • Patent number: 6706961
    Abstract: A photovoltaic device having a first electrode comprising a metallic wire, a second electrode connected to the first electrode, and a joint portion composed of conductive particles and a resin. The joint portion is arranged between the metallic wire constituting the first electrode and the second electrode. A volume density of the conductive particles in the joint is decreased in a direction from a surface of the second electrode to a surface of the metallic wire constituting the first electrode.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: March 16, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Koichi Shimizu, Tsutomu Murakami, Kouji Tsuzuki
  • Patent number: 6471816
    Abstract: In this method of solar battery output section fabrication, a metal foil is attached to an output terminal on a substrate surface, or a resin film is disposed over a conductive paste as the output terminal on the substrate surface. Subsequently, an opening is cut-out from the back side of the substrate to the metal foil or the conductive paste with a periphery cutter. Or, after the metal foil and a front side protective film is provided over the output terminal on the substrate surface, an opening is cut-out from the surface of the front side protective film to the metal foil with a periphery cutter.
    Type: Grant
    Filed: March 29, 2000
    Date of Patent: October 29, 2002
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hidekazu Shuto, Nobuo Hanehira, Hiroyuki Mori, Masayoshi Ono, Yoshinobu Takabatake
  • Publication number: 20020117201
    Abstract: Method for producing a hybrid organic solar cell having the general structure
    Type: Application
    Filed: November 21, 2001
    Publication date: August 29, 2002
    Inventors: Gabrielle Nelles, Akio Yasuda, Hans-Werner Schmidt, Mukundan Thelakkat, Christoph Schmitz
  • Patent number: 6423568
    Abstract: A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer comprising aluminum on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of inorganic material on the first metal layer, by etching and patterning the insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, and by depositing a second three-layer metal stack comprising materials other than aluminum, on the insulator layer of polyimide in such a way that the second three-layer metal stack comes into contact with the one of the p-doped regions and the n-doped regions.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: July 23, 2002
    Assignees: Sunpower Corporation, Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Pierre J. Verlinden, Akira Terao, Haruo Nakamura, Norio Komura, Yasuo Sugimoto, Junichi Ohmura
  • Patent number: 6423567
    Abstract: The present invention relates to a process for the fabrication of contact structures in semiconductor components, in particular, solar cells, such as semiconductor components having such contact structures. According to one aspect of the present invention, after positioning of an etching mask (3) over a first layer respectively sequence of layers (2), indentations are etched through the first layer down to or into a second layer (1) lying therebelow. The etching occurs in such a manner that the etching mask (3) is undercut and/or at least one region of the first layer (2) contains negative flanks. Subsequently an electrically conductive material (9) is introduced into the indentations, with the etching mask (3) or the first layer (2) forming a shadow mask for the introduction of this material. This conductive material is only introduced to a height in the indentations at which there is no contact between the conductive material (9) and the first layer (2).
    Type: Grant
    Filed: November 29, 2000
    Date of Patent: July 23, 2002
    Assignee: Fraunhofer Gesellschaft zur forderung der angewandten Forschung e.V.
    Inventors: Ralf Lüdemann, Sebastian Schaefer
  • Patent number: 6403877
    Abstract: A space solar cell includes a back surface electrode formed on a back surface opposite to a light receiving surface of a semiconductor substrate, and a dielectric layer formed between the back surface electrode and the semiconductor substrate. In the space solar cell, a plurality of openings are formed in the dielectric layer for establishing an electrical connection between the back surface electrode and the semiconductor substrate, and a ratio of an area occupied by the openings relative to an area of the back surface is within a range from 0.25% to 30%.
    Type: Grant
    Filed: February 21, 2001
    Date of Patent: June 11, 2002
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Tomoji Katsu
  • Patent number: 6342398
    Abstract: A novel approach to detection of leakage site detection for BGA chips. The invention prevents damaging the semiconductor circuit that is a problem during conventional preparation for backside leakage detection for BGA chips. The invention teaches removing the backside from the BGA device and separating the BGA device into two parts. The back surface of the molded part within which the BGA chip is embedded remains undamaged within the scope of the present invention and can be electrically accessed to perform BGA die analysis.
    Type: Grant
    Filed: December 17, 1998
    Date of Patent: January 29, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventor: Yu-Ting Lin
  • Patent number: 6274402
    Abstract: A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of inorganic material on the first metal layer, by etching and patterning the first insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of organic material on the first insulator layer, by etching and patterning the second insulator layer in such a way that the insulator layer has opened windows at the one of the p-doped regions and the n-doped regions, by curing the second insulator layer by heating at a predeterm
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: August 14, 2001
    Assignees: Sunpower Corporation, Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Pierre J. Verlinden, Akira Terao, Haruo Nakamura, Norio Komura, Yasuo Sugimoto, Junichi Ohmura
  • Patent number: 6262359
    Abstract: A process for fabricating a solar cell is described. The process includes: (1) providing a base layer, (2) fabricating an emitter layer of p-type conductivity on a same side as the non-illuminated surface of the base layer to provide a strongly doped p-type emitter layer and a p-n junction between the n-type base layer and the p-type emitter layer. The base layer of the present invention has n-type conductivity and is defined by an illuminated surface and a non-illuminated surface. The illuminated surface has light energy impinging thereon when the solar cell is exposed to the light energy and the non-illuminated surface is opposite the illuminated surface.
    Type: Grant
    Filed: October 7, 1999
    Date of Patent: July 17, 2001
    Assignee: Ebara Solar, Inc.
    Inventors: Daniel L. Meier, Hubert P. Davis, Ruth A. Garcia, Jalal Salami
  • Patent number: 6248949
    Abstract: An improved method of manufacturing a solar cell receiver plate of a concentrator photovoltaic array. A plurality of strips each having its own linear electrical circuit are connected to the top surface of a primary aluminum substrate. The strips are aligned parallel to each other and laterally spaced from each other a predetermined distance. Each strip has a plurality of solar cells mounted thereon. The electrical circuits are connected together in series. Cooling fins are secured to the bottom surface of the primary aluminum substrate. The strips have been formed from a secondary aluminum substrate that had its dielectric layer adhered to its top surface by a layer of adhesive. A second layer of adhesive covers the top surface of the dielectric layer which in turn is covered by a sheet of copper to form a laminated first assembly.
    Type: Grant
    Filed: October 28, 1999
    Date of Patent: June 19, 2001
    Inventor: Gerald A. Turner
  • Patent number: 6139831
    Abstract: Apparatus and method for immobilizing molecules, particularly biomolecules such as DNA, RNA, proteins, lipids, carbohydrates, or hormones onto a substrate such as glass or silica; patterns of immobilization can be made resulting in addressable, discrete arrays of molecules on a substrate, having applications in bioelectronics, DNA hybridization assays, drug assays, etc.
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: October 31, 2000
    Assignee: The Rockfeller University
    Inventors: Ganaganor Visweswara Shivashankar, Albert J. Libchaber
  • Patent number: 6133521
    Abstract: The solar battery output section has a hole provided through the substrate and through an output terminal formed on the front-side of that substrate. Metal foil is applied covering the hole on the backside of the substrate. The inside of the hole is filled with conducting material to electrically connect the output terminal and the metal foil. Finally, a protective resin film is applied over the substrate, and a wire lead is solder attached to the metal foil on the backside of the substrate.
    Type: Grant
    Filed: March 11, 1998
    Date of Patent: October 17, 2000
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Takahiro Haga, Nobuo Hanehira, Hiroyuki Mori, Masanori Kaji, Masayoshi Ono, Masato Nishikuni, Yoshinobu Takabatake
  • Patent number: 6066797
    Abstract: The object of this invention is to provide a solar cell module having a terminal extracting structure for it, with high adhesion workability, high productivity, and high reliability. The solution to this object is a solar cell module wherein a box member having therein an electrical connecting portion between a solar cell element and an outer lead wire is adhered to the solar cell module with a pressure-sensitive adhesive, and a lid member is adhered to the solar cell module with an adhesive so as to cover the box member.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: May 23, 2000
    Assignee: Canon Kabushiki Kaisha
    Inventors: Fumitaka Toyomura, Makoto Sasaoka
  • Patent number: 6051778
    Abstract: An electrode structure is formed by superposing a bar-shaped or linear metal member on an electroconductive layer comprising a polymeric resin and an electroconductive filler dispersed therein. The electroconductive layer may be formed as an electroconductive sheet in advance and patterned before it is superposed with the metal member, followed by heat and pressure application to provide an electrode structure showing a low resistivity, a large adhesion even to an elevation and a high reliability. The electrode structure is suitably used for providing a collector electrode structure on a photo-electricity generating device.
    Type: Grant
    Filed: December 11, 1997
    Date of Patent: April 18, 2000
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hirofumi Ichinose, Akio Hasebe, Tsutomu Murakami, Satoshi Shinkura, Yukie Ueno
  • Patent number: 6034321
    Abstract: A dot-junction photovoltaic cell using high absorption semi-conductors increases photovoltaic conversion performance of direct band gap semi-conductors by utilizing dot-junction cell geometry. This geometry is applied to highly absorbing materials, including In.sub.x-1 Ga.sub.x As. The photovoltaic cell configured to be separated into a thin active region and a thick, inactive substrate, which serves as a mechanical support.
    Type: Grant
    Filed: March 24, 1998
    Date of Patent: March 7, 2000
    Assignee: Essential Research, Inc.
    Inventor: Phillip P. Jenkins
  • Patent number: 6011215
    Abstract: A large area photovoltaic device includes a plurality of photovoltaic regions electrically interconnected in parallel. The regions are defined by a plurality of conductive channels which establish electrical contact between a top transparent electrode of the device and a monolithic, metal substrate electrode. A second terminal of the device is provided by a bottom, metallic electrode disposed beneath the semiconductor body, and upon an electrically insulating layer which is supported upon the metallic substrate.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: January 4, 2000
    Assignee: United Solar Systems Corporation
    Inventors: Troy Glatfelter, Eric Akkashian, Mark Lycette
  • Patent number: 5962871
    Abstract: A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.
    Type: Grant
    Filed: November 5, 1996
    Date of Patent: October 5, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Toru Takayama, Yasuhiko Takemura