Abstract: A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.

Abstract: The invention pertains to a process for manufacturing a solar cell foil comprising the steps of: providing an etchable temporary substrate applying a front electrode of a transparent conductive oxide (TCO) onto the temporary substrate applying a photovoltaic layer onto the TCO layer applying a back electrode layer applying a permanent carrier ensuring that the front electrode and the back electrode are electrically connected in an interconnect to establish a series connection, the front and the back electrode each being interrupted by front and back groove, respectively, at different sides of the interconnect in any one of the preceding steps providing an etch resist on the non-TCO side of the temporary substrate at least at the location of the interconnect, and at least not at the entire location of the front groove selectively removing the temporary substrate where it is not covered with etch resist.

Abstract: An apparatus and a method for manufacturing a CIGS solar cell are disclosed. The apparatus includes a buffer chamber, a first chamber, a second chamber and a mechanical device. The first chamber and the second chamber are located adjacent to the buffer chamber respectively. The mechanical device moves a substrate among the buffer chamber, the first chamber and the second chamber. The first chamber includes a deposition device for depositing a back electrode layer onto the substrate. The second chamber includes heat treatment device and for becoming a thin-film layer onto the back electrode layer.

Abstract: A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate.

Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.

Abstract: A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have a first conductivity type, and the semiconductor layer has a second conductivity type which is different from the first conductivity type.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. The method forms a first electrode layer overlying the surface region of the transparent substrate. The method also forms a thin layer of indium material, using a sputtering target of indium material, overlying the first electrode layer to act as an intermediary glue layer to facilitate attachment to the first electrode layer. In a specific embodiment, the method forms a copper material overlying the thin layer of indium material. The method also forms an indium layer overlying the copper material to form a multi layered structure including at least the thin layer of indium material, copper material, and the indium layer. In a preferred embodiment, the multi-layered structure has a first thickness.

Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

Abstract: A method for producing a monocrystalline solar cell having a passivated back side and a back side contact structure, having the following steps: applying a passivating dielectric layer onto the back side of the cell over the entire surface; removing the passivating layer locally in the area of bus bars and local contact locations; coating the back side of the cell homogeneously to develop an unpatterned, thin metal layer, which touches the surface of the substrate material in the areas free of the passivating layer; generating a thick layer from a conductive paste in the area of the bus bars and the local contact locations; and sintering of the thick layer at a temperature above a predefined eutectic temperature, and the formation of a eutectic, low-resistance connection of the thin metal layer to the surface of the substrate material as well as to the conductive particles of the thick layer paste.

Abstract: A method for processing a thin film photovoltaic module. The method includes providing a plurality of substrates, each of the substrates having a first electrode layer and an overlying absorber layer composed of copper indium gallium selenide (CIGS) or copper indium selenide (CIS) material. The absorber material comprises a plurality of sodium bearing species. The method maintains the plurality of substrates in a controlled environment after formation of at least the absorber layer through one or more processes up to a lamination process. The controlled environment has a relative humidity of less than 10% and a temperature ranging from about 10 Degrees Celsius to about 40 Degrees Celsius. The method subjects the plurality of substrates to a liquid comprising water at a temperature from about 10 Degrees Celsius to about 80 Degrees Celsius to process the plurality of substrates after formation of the absorber layer.

Abstract: A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.

Abstract: The invention relates to the formation of thin-film crystalline silicon using a zone-melting recrystallization process in which the substrate is a ceramic material. Integrated circuits and solar cells are fabricated in the recrystallized silicon thin film and lifted off the substrate. Following lift-off, these circuits and devices are self-sustained, lightweight and flexible and the released ceramic substrate can be reused making the device fabrication process cost effective.

Abstract: A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Abstract: An organic light emitting display device includes a first substrate, an array of organic light emitting pixels formed on the substrate, a second substrate opposing the first substrate. A frit seal interconnects the first and second substrates and surrounds the array of organic light emitting pixels. A film structure interposed between the second substrate and the array of organic light emitting pixels and contacts both the second substrate and the array.

Abstract: A photovoltaic cell is made by coating a metal foil substrate with cadmium telluride powder, moving the powder coated foil across a cold plate or series of cooled rollers to prevent the substrate from melting, while melting the cadmium telluride powder by passing the powder coated foil under a microwave energy source. This forms a thin film of cadmium telluride on the foil. The cadmium telluride coated foil is then coated with cadmium sulfide powder, which is melted by passing the powder coated foil under a microwave energy source, thereby creating a P-N junction, and the cadmium sulfide layer is coated with indium, which is fused to the cadmium sulfide layer by microwave heating.

Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

Abstract: A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

Abstract: The present invention relates generally to production of photoelectric grade films or cells from semiconductor powders or dust. In one embodiment, the present invention provides a method for producing a photoelectric grade film from a semiconductor powder. The method includes providing a substrate, coating the substrate with a layer of the semiconductor powder and moving the substrate with the layer of the semiconductor powder under an energy source at a predefined rate, wherein the predefined rate is sufficient to melt the semiconductor powder by the energy source and to cool the substrate such that substantially all impurities are moved to an edge of the substrate.

Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.

Abstract: A structural configuration of a failsafe OLED chain with multiple OLED lighting components in series connection is described. During the manufacture of the lighting component a weak spot is specifically installed at an appropriate location of the structure in the form of a break-through layer, which in the event of a failure of the lighting component breaks down and bypasses the component with a bypass layer.

Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.

Abstract: A semiconductor device and method of manufacturing the same includes an n?-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n?-drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.

Abstract: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.

Abstract: A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

Abstract: This invention is related to a micromesh material and a mono-crystal high frequency capacitor manufactured with said micromesh material as well as the producing method for the mono-crystal high frequency capacitor, i.e., disperse a colloidal material unevenly to form a sub-micrometer ceramic cell structure to get a micromesh mono-crystal material on the basis of the theory of liquid-liquid phase transformation, and produce capacitors with the obtained material to enhance the high frequency characteristics of those capacitors with the micromesh mono-crystal structure (air medium) of dielectric ceramics.

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract: In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

Abstract: A semiconductor device having a first wiring layer including first wirings on a substrate, a contact layer on the first wiring layer and including contacts connected to the first wirings, and a second wiring layer on the contact layer and including second wirings connected to the contacts. Contact pitch is larger than the minimum wiring pitch of the first wirings or the minimum wiring pitch of the second wirings.

Abstract: An imaging device unit comprises a CCD chip and a substrate on which the CCD chip is soldered. A light receiving surface is provided in the front surface of the CCD chip. A dustproof member for protect the light receiving surface from dust is attached around the light receiving surface. Chip terminals are arranged between the light receiving surface and the dustproof member. When the CCD chip is pressed against the rear surface of the substrate, the dustproof member is elastically deformed and tightly makes contact with the substrate. Since ultrasound is applied to the chip terminals and the substrate terminals in this state to melt them, the CCD chip is positioned in parallel with the substrate. Upon stopping ultrasound horns, both of the terminals are immediately soldered to each other, so that the CCD chip is securely fixed on the substrate with ease.

Abstract: A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Abstract: A method of fabricating a germanium photodetector includes preparing a silicon wafer as a silicon substrate; depositing a layer of silicon nitride on the silicon substrate; patterning and etching the silicon nitride layer; depositing a first germanium layer on the silicon nitride layer; patterning and etching the germanium layer wherein a portion of the germanium layer is in direct physical contact with the silicon substrate; depositing a layer of silicon oxide on the germanium layer wherein the germanium layer is encapsulated by the silicon oxide layer; annealing the structure at a temperature wherein the germanium melts and the other layers remain solid; growing a second, single-crystal layer of germanium on the structure by liquid phase epitaxy; selectively removing the silicon oxide layer; and completing the germanium photodetector.

Abstract: The invention relates to an optical module and to method for manufacturing an optical module comprising the steps of: providing a groove in a substrate for positioning an optical component, providing the optical component, bonding the optical component to the groove by means of an aluminium-oxide bonding process, whereby an aluminium layer is formed on a lower portion of the optical component.

Abstract: A PIN diode includes a first p-area, an n-area, and in between an intermediate area on a first surface of a substrate, wherein a doping concentration of the intermediate area is lower than a doping concentration of the p-area and lower than a doping concentration of the n-area. Further, the PIN diode includes a first electrically conductive member, which is arranged on a side of the p-area, which faces away from the intermediate area, and a second electrically conductive member, which is arranged on a side of the n-area, which faces away from the intermediate area. The PIN diode is preferably separated from the substrate by an insulating layer, covered by a further insulating layer on the surface, which faces away from the substrate, and laterally surrounded by a trench filled with an insulating material, such that it is essentially fully insulated and encapsulated.

Abstract: A liquid crystal display device includes an upper plate, a lower plate, and a liquid crystal. A sealant is formed along edges of the upper and lower plates to join the upper plate with the lower plate, and a protrusion separates the sealant from a picture displaying area at an inner portion of the upper and lower plates. The liquid crystal injected into the picture displaying area.

Abstract: A method of encapsulating an organic device including flash evaporating a getter layer on the substrate is disclosed. The getter layer comprises an alkaline earth metal, such as barium. The getter layer serves to protect the active components by absorbing surrounding moisture and gases.

Abstract: A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Abstract: Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.

Abstract: A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.

Abstract: The invention relates to a memory, based on organic material and applied in combination with an organic integrated circuit (integrated plastic circuit). The invention particularly relates to a memory for a RFID-Tag (RFID-tags: radio frequency identification tags) and several methods for describing a memory.

Abstract: There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a microcrystalline silicon body. The deposition gas and the conversion gas are subjected to a pulsed electromagnetic radiation to effectuate deposition and conversion.

Abstract: A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Abstract: An imaging device unit comprises a CCD chip and a substrate on which the CCD chip is soldered. A light receiving surface is provided in the front surface of the CCD chip. A dustproof member for protect the light receiving surface from dust is attached around the light receiving surface. Chip terminals are arranged between the light receiving surface and the dustproof member. When the CCD chip is pressed against the rear surface of the substrate, the dustproof member is elastically deformed and tightly makes contact with the substrate. Since ultrasound is applied to the chip terminals and the substrate terminals in this state to melt them, the CCD chip is positioned in parallel with the substrate. Upon stopping ultrasound horns, both of the terminals are immediately soldered to each other, so that the CCD chip is securely fixed on the substrate with ease.

Abstract: The invention, in various embodiments, is directed to photovoltaic cells, modules and methods for making the same, wherein a plurality of discrete portions of metal foil having an interconnected nanoparticle material formed thereon are disposed, preferably as strips having a controlled size and relative spacing, between first and second flexible substrates.

Abstract: Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

Abstract: The disclosure describes an economical and environmentally benign method to recover crystalline silicon metal kerf from wiresaw slurries and to shape and sinter said recovered crystalline silicon kerf into thin-layer PV cell configurations with enhanced surface texture for metallization and reduced optical reflection losses.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical processing layers can be placed on monocrystalline layers to process photons produced in the monocrystalline layers.