Abstract: A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

Abstract: A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, wherein the thickness of the dielectric layer between the channel layer and the field plate, the distance between the Schottky contact and the drain and the length of the field plate are to be fallen within the range between 300 nanometers thick to 600 nanometers thick, the range from 800 nanometers long to 3000 nanometers long and the range between the distance between the Schottky contact and the drain plus minus 400 nanometers, respectively, so that the distortion and the return-loss are improved without sacrifice of the withstanding voltage.

Abstract: Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel structure is provided to give high quantum efficiency. The invention also discloses UV detectors with an active layer of pure ZnS and with an active layer of ZnSSe.

Abstract: A solar cell includes a substrate carrier for current generating photoactive layers that include at least one front layer and one layer toward the substrate of different polarities, a front contact, at least one back contact and an integral protective diode which has a polarity opposite the solar cell integrated in and disposed on a front side of the solar cell and including at least one diode semiconductor layer. A tunnel diode extends between the photoactive layers and a region of the substrate toward the front, the tunnel diode being recessed adjacent the protective diode. The region of the substrate toward the front, or a layer toward the front applied to or formed by the front, together with a photoactive layer of corresponding polarity toward the front, make up the at least one diode semiconductor layer of the protective diode.

Abstract: A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1−xAS with x>0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%.

Abstract: A method of forming an improved Schottky diode structure as part of an integrated circuit fabrication process that includes the introduction of a selectable concentration of dopant into the surface of an epitaxial layer so as to form a barrier-modifying surface dopant layer. The epitaxial layer forms the cathode of the Schottky diode and a metal-silicide layer on the surface of the epitaxial layer forms the diode junction. The surface dopant layer positioned between the cathode and the diode junction is designed to raise or lower the barrier height between those two regions either to reduce the threshold turn-on potential of the diode, or to reduce the reverse leakage current of the transistor. The particular dopant conductivity used to form the surface dopant layer is dependent upon the conductivity of the epitaxial layer and the type of metal used to form the metal-silicide junction.

Abstract: A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.

Abstract: A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

Abstract: Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Schottky contacts are continuously being developed. In the invention, the surface treatment of composite semiconductor is used for reduce a surface state and oxidation, thereby increased the Schottky barriers of the Group III-V composite (such as, GaAs, fnP, InAs and InSb) Schottky contacts. During experiments. a phosphorus sulphide/ammonia sulphide solution and hydrogen fluoride solution are used for the surface treatment to increase the amount of sulphur contained on the surfaces of substrates, reduce the surface state and remove various oxides. Furthermore. ultra-thin and really stable sulphur fluoride/phosphorus fluoride layers having high energy gaps are formed on various substrates.

Abstract: A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a peripheral region of the Schottky contact and a doped region in the semiconductor substrate having a second conduction type of opposite polarity from the first conduction type. The doped region extends from a main surface of the semiconductor substrate to a predetermined depth into the semiconductor substrate. The doped region of the protective structure has at least two different first and second doped portions located one below the other relative to the main surface of the semiconductor substrate. The first doped portion is at a greater depth and has a comparatively lesser doping, and the second doped portion has a comparatively higher doping and a slight depth adjacent the main surface of the semiconductor substrate.

Abstract: A method of fabricating a semiconductor device on a substrate, wherein the substrate comprises a first layer of doped silicon carbide of a first conducting type and exhibits at least one hollow defect. In a first step the positions of the hollow defects in the substrate are identified, whereafter a second SiC layer of a second conducting type is formed in contact with the first layer, whereafter the first and second layer constituting the pn junction are provided with at least one edge termination surrounding any hollow defect, whereby the defect is excluded from the high-field region of the device.

Abstract: A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800.degree. C. The diode is both sensitive and stable at elevated temperatures.

Abstract: A composite-layer semiconductor device includes a gate above a host substrate, an n++ contact layer above the gate, and source and drain ohmic contacts applied to the n++ contact layer. The source and drain ohmic contacts define a central gate location which is recessed through the n++ contact layer toward the gate. The source and drain ohmic contacts create a barrier to chemical etching so that a current path below the central gate location can be incrementally recessed in repeated steps to precisely tailor the operating mode of the device for depletion or enhancement applications. The composite-layer semiconductor device is fabricated by depositing a gate on an n++ contact layer above a semi-insulating substrate. The semi-insulating substrate and gate are flipped onto an epoxy layer on the host substrate so that the gate is secured to the epoxy layer and the semi-insulating substrate presents an exposed backside. A portion of the exposed backside is removed.

Abstract: Disclosed herein is a method of manufacturing a semiconductor device, which comprises steps of forming metal patterns, irradiating an electron beam to electrically neutralize the charge distribution of the metal layer and forming an O.sub.3 -TEOS layer used for planarization of the interlayer insulating layer.

Abstract: A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration and then inverted onto a new permanent substrate member and an original surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Electrical characteristics including curve tracer electrical data originating in both dark and illuminated devices and devices of varying size and both depletion mode and enhancement mode operation are also disclosed. Fabrication of the device from gallium arsenide semiconductor material and utilization for infrared energy transducing in a number of differing electronic applications are also disclosed.