Abstract: A method of forming a semiconductor device including forming a dielectric material layer on a semiconductor layer, forming a gate electrode material layer on the dielectric material layer, forming mask features on the gate electrode material layer, forming a spacer layer on and at sidewalls of the mask features and on the gate electrode material layer between the mask features, removing the spacer layer from the gate electrode material layer between the mask features, and etching the gate electrode material layer and dielectric material layer using the hard mask features as an etch mask to obtain gate electrode structures. A semiconductor device including first and second gate electrode structures, each covered by a cap layer that comprises a mask material surrounded at the sidewalls thereof by a spacer material different from the mask material, and the distance between the first and second electrode structures is at most 100 nm.

Abstract: According to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the first polymer portion, forming a second guide layer with the use of the second polymer portion, and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

Abstract: A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material.

Abstract: A multi-patterning method includes: patterning at least two first openings in a hard mask layer over a substrate using a first mask; forming spacers within two of the at least two first openings, each spacer having a spacer opening therein for patterning a respective first circuit pattern over the substrate, wherein each spacer defines a pattern-free region adjacent to a respective one of the at least two first circuit patterns, and patterning a second circuit pattern in the hard mask layer using a second mask. The second circuit pattern is located between and excluded from the pattern free regions adjacent the at least two first circuit patterns.

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract: A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

Abstract: A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.

Abstract: An integrated circuit pattern comprises a set of lines of material having X and Y direction portions. The X and Y direction portions have first and second pitches, the second pitch being larger, such as at least 3 times larger, than the first pitch. The X direction portions are parallel and the Y direction portions are parallel. The end regions of the Y direction portions comprise main line portions and offset portions. The offset portions comprise offset elements spaced apart from and electrically connected to the main line portions. The offset portions define contact areas for subsequent pattern transferring procedures. A multiple patterning method, for use during integrated circuit processing procedures, provides contact areas for subsequent pattern transferring procedures.

Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.

Abstract: Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n?2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over and parallel to mandrels at tier n?1, and the distance between adjoining mandrels at tier n is greater than the distance between adjoining mandrels at tier n?1. Spacers are simultaneously formed on sidewalls of the mandrels. Exposed portions of the mandrels are etched away and a pattern of lines defined by the spacers is transferred to the substrate.

Abstract: A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.

Abstract: A method of forming a pattern includes forming a plurality of target patterns, forming a plurality of pitch violating patterns that make contact with the plurality of target patterns and are disposed between the plurality of target patterns, classifying the plurality of pitch violating patterns into a first region and a second region adjacent to the first region, and forming an initial pattern corresponding to one of the first region and the second region.

Abstract: According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.

Abstract: A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width.

Abstract: A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than a minimum feature size (L). Hydrophobic spacers are formed on the template lines and include a fractional width of L. A neutral brush layer is grafted to the hydrophilic layer. A DSA material is deposited between the spacers and annealed to form material domains in a form of alternating lines of a first and a second material wherein the first material in contact with the spacers includes a width less than a width of the lines. A metal is added to the domains forming an etch resistant second material. The first material and the spacers are removed to form a DSA template pattern.

Abstract: A target space ratio of a monitor pattern on a substrate for inspection is determined to be different from a ratio of 1:1. A range of space ratios in a library is determined to include the target space ratio and not include a space ratio of 1:1. The monitor pattern is formed on a film to be processed by performing predetermined processes on the substrate for inspection. Sizes of the monitor pattern are measured. The sizes of the monitor pattern are converted into sizes of a pattern of the film to be processed having a space ratio of 1:1, and processing conditions of the predetermined processes are compensated for based on the sizes of the converted pattern of the film to be processed. After that, the predetermined processes are performed on a wafer under the compensated conditions to form a pattern having a space ratio of 1:1 on the film to be processed.

Abstract: Methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes providing a mandrel layer overlying a semiconductor substrate and patterning the mandrel layer into mandrel structures. The method further includes forming a protective layer between the mandrel structures. Spacers are formed around each of the mandrel structures and overlying the protective layer to define exposed regions of the protective layer and covered regions of the protective layer. The exposed regions of the protective layer are etched using the spacers and the mandrel structures as a mask. The spacers are removed from the covered regions of the protective layer. The covered regions of the protective layer form mask segments for etching the semiconductor substrate. The method removes the mandrel structures and etches the semiconductor substrate exposed between mask segments to form semiconductor fin structures.

Abstract: Fabrication methods for semiconductor device structures are provided. In an exemplary embodiment, a method of fabricating an electrically-isolated FinFET semiconductor device includes the steps of forming a silicon oxide layer over a semiconductor substrate including a silicon material and forming a first hard mask layer over the silicon oxide layer. The method further includes the steps of forming a first plurality of void spaces in the first hard mask layer and forming a second hard mask layer in the first plurality of void spaces. Still further, the method includes the steps of removing the remaining portions of the first hard mask layer, thereby forming a second plurality of void spaces in the second hard mask layer, extending the second plurality of void spaces into the silicon oxide layer, and forming a plurality of fin structures in the extended second plurality of void spaces.

Abstract: A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.

Abstract: A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ?20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.

Abstract: A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from the gate structure and the substrate, while retaining a sidewall spacer positioned along a sidewall of the gate structure. The spacer etch process sequence may include depositing a SiOCl-containing layer on an exposed surface of the spacer material to form a spacer protection layer.

Abstract: A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography mask; performing a first etch to the semiconductor substrate to define an active region using the first mask layer; forming a second mask layer having a plurality of mask strips over the semiconductor substrate and over the active region; forming a third mask layer over the second mask layer, wherein a middle portion of the plurality of mask strips is exposed through an opening in the third mask layer, and end portions of the plurality of mask strips are covered by the third mask layer; and performing a second etch to the semiconductor substrate through the opening.

Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc?No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

Abstract: A method of forming an integrated circuit is disclosed. A second material layer is formed on a first material layer. A patterned mask layer having a plurality of first features with a first pitch P1 is formed on the second material layer. The second material layer is etched by using the patterned mask layer as a mask to form the first features in the second material layer. The patterned mask layer is trimmed. A plurality of dopants is introduced into the second material layer not covered by the trimmed patterned mask layer. The trimmed patterned mask layer is removed to expose un-doped second material layer. The un-doped second material layer is selectively removed to form a plurality of second features with a second pitch P2. P2 is smaller than P1.

Abstract: A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Abstract: The present disclosure relates to a method of fabricating semiconductor devices. In the method provided by the present invention, by filling with diblock copolymer a recess of an interlayer dielectric layer naturally formed between two gate lines and then performing a self-assembly process of the diblock copolymer, a small-sized contact hole precisely aligned with an doped area can be formed, and thus misalignment between the contact hole and the doped area can be eliminated or alleviated.

Abstract: Approaches for forming a FinFET device using double patterning memorization techniques are provided. Specifically, a device will initially be formed by defining a set of fins, depositing a poly-silicon layer, and depositing a hardmask. Thereafter, a front end of the line (FEOL) lithography-etch, lithography-etch (LELE) process will be performed to form a set of trenches in the device. The set of trenches will be filled with an oxide layer that is subsequently polished. Thereafter, the device is selectively etched to yield a (e.g., poly-silicon) gate pattern.

Abstract: A slimming method includes transferring an object to be processed on which a patterned carbon-containing thin film is formed into a process chamber in an oxidation apparatus; and oxidizing and removing the surface of the carbon-containing thin film by an oxidizing gas while supplying moisture into the process chamber, to reduce widths of the protruded portions on the pattern of the carbon-containing thin film.

Abstract: A method of fabricating gate level electrodes and interconnects in an integrated circuit, and an integrated circuit so fabricated, with improved process margin for the gate level interconnects of a width near the critical dimension. Off-axis illumination, as used in the photolithography of deep sub-micron critical dimension, is facilitated by the patterned features having a preferred orientation in a common direction, with a pitch constrained to within a relatively narrow range. Interconnects in that same gate level, for example “field poly” interconnects, that run parallel to an array of gate elements are placed within a specified distance range from the ends of the gate elements, or at a distance sufficient to allow sub-resolution assist features.

Abstract: Methods are provided for forming an integrated circuit. In an embodiment, the method includes forming a sacrificial mandrel overlying a base substrate. Sidewall spacers are formed adjacent sidewalls of the sacrificial mandrel. The sidewall spacers have a lower portion that is proximal to the base substrate, and the lower portion has a substantially perpendicular outer surface relative to the base substrate. The sidewall spacers also have an upper portion that is spaced from the base substrate. The upper portion has a sloped outer surface. A first dielectric layer is formed overlying the base substrate and is conformal to at least a portion of the upper portion of the sidewall spacers. The upper portion of the sidewall spacers is removed after forming the first dielectric layer to form a recess having a re-entrant profile in the first dielectric layer. The re-entrant profile of the recess is straightened.

Abstract: A method includes forming patterned lines on a substrate having a predetermined pitch. The method further includes forming spacer sidewalls on sidewalls of the patterned lines. The method further includes forming material in a space between the spacer sidewalls of adjacent patterned lines. The method further includes forming another patterned line from the material by protecting the material in the space between the spacer sidewalls of adjacent patterned lines while removing the spacer sidewalls. The method further includes transferring a pattern of the patterned lines and the another patterned line to the substrate.

Abstract: Methods for fabricating arrays of nanoscaled alternating lamellae or cylinders in a polymer matrix having improved long range order utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A semiconductor device having a line-type active region and a method for manufacturing the same are disclosed. The semiconductor device includes an active region configured in a successive line type, at least one active gate having a first width and crossing the active region, and an isolation gate having a second width different from the first width and being formed between the active gates. The isolation gate's width and the active gate's width are different from each other to guarantee a large storage node contact region, resulting in increased device operation characteristics (write characteristics).

Abstract: A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.

Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

Abstract: A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.

Abstract: A method of fabricating semiconductor structures comprising sub-resolution alignment marks is disclosed. The method comprises forming a dielectric material on a substrate and forming at least one sub-resolution alignment mark extending partially into the dielectric material. At least one opening is formed in the dielectric material. Semiconductor structures comprising the sub-resolution alignment marks are also disclosed.

Abstract: A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial material that is deposited over a structure layer and covered by a cover layer. The sacrificial material layer and the cover layer are patterned with conventional resist and etched to form a sacrificial mandrel. The edges of the mandrel are oxidized or nitrided in a plasma at low temperature, after which the material layer and the cover layer are stripped, leaving sublithographic sidewalls. The sidewalls are used as hardmasks to etch sublithographic gate structures in the gate conductor layer.

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract: The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3.

Abstract: Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n?2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over and parallel to mandrels at tier n?1, and the distance between adjoining mandrels at tier n is greater than the distance between adjoining mandrels at tier n?1. Spacers are simultaneously formed on sidewalls of the mandrels. Exposed portions of the mandrels are etched away and a pattern of lines defined by the spacers is transferred to the substrate.

Abstract: Methods of manufacturing a phase-change memory device and a semiconductor device are provided. The method of manufacturing the phase-change memory device includes forming a switching device layer, an ohmic contact layer, and a hard mask layer on a semiconductor substrate, patterning the hard mask layer to form a hard mask pattern, etching the ohmic layer and the switching layer using the hard mask pattern to form a pattern structure including an ohmic contact pattern, a switching device pattern, and the hard mask pattern, selectively oxidizing a surface of the pattern structure, forming an insulating layer to bury the pattern structure, and selectively removing the hard mask pattern other than the oxidized surface thereof to form a contact hole.

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A pattern forming method including: (a) forming a porous layer above an etching target layer; (b) forming an organic material with a transferred pattern on the porous layer; (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer; and (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask.

Abstract: A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode.