Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

Abstract: Provided are an azide-based compound, an organic light-emitting device including the azide-based compound, and a method of manufacturing the organic light-emitting device.

Abstract: A mask sheet for evaporation on a substrate is provided, and the mask sheet includes: a plurality of first ribs extending in a first direction; and a plurality of second ribs extending in a second direction intersecting the first direction, the mask sheet includes a first region for an evaporation of a first exposure region of the substrate and a second region for an evaporation of a second exposure region of the substrate, a third rib is provided at a boundary of the first region and the second region so as to shield an overlapping exposure region between the first exposure region and the second exposure region, the third rib includes a first sub-rib, a second sub-rib, and a spacer for separating the first sub-rib and the second sub-rib, and the third rib has a width greater than that of the first rib.

Abstract: A molecular memory recording molecular polarization of a single-molecule electret, and the single-molecule electret includes a cluster skeleton 100 having a continuous hole 101 and a plurality of stable ionic sites 102a, 102b and a metal ion M. The molecular polarization is shown in a state in which the metal ion is included in the stable ionic site. The molecular polarization is changed by movement of the metal ion to the other hollow stable ionic site by application of an electric field. The recordkeeping time of the molecular memory in a temperature range of ?100° C. to 100° C. based on the ion radius of the metal ion is 3.0×10?2 seconds to 9.1×1022 seconds. Based on the recordkeeping time, the molecular memory is used as any of a volatile memory, a non-volatile memory, and a storage class memory.

Abstract: A display device includes an upper display substrate including a first pixel region for emitting a first light, a second pixel region for emitting a second light different from the first light, and a third pixel region for emitting a third light different from the first light and the second light; and a lower display substrate including a first light-emitting element overlapping the first pixel region, a second light-emitting element overlapping the second pixel region, and a third light-emitting element overlapping the third pixel region. The second light-emitting element includes one or more first stacks for emitting the second light, the third light-emitting element includes one or more second stacks for emitting the third light, and a concentration of a conductive material included in the one or more first stacks is higher than a concentration of a conductive material included in the one or more second stacks.

Abstract: In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.

Abstract: The inventive concept relates to a three-dimensional crosslinker composition and a method of manufacturing an electronic device using the same. According to the inventive concept, the three-dimensional crosslinker composition may be represented by Formula 1 below.

Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

Abstract: Provided are a display panel and a display device. The display panel includes a transparent display region and a non-transparent display region. The display panel includes at least a first cathode and a second cathode; the first cathode is in the transparent display region; the second cathode is in the non-transparent display region; a first work function of the first cathode is greater than a second work function of the second cathode; and the first work function of the first cathode and the second working function of the second cathode are respectively in a range from 3.8 eV to 4.1 eV.

Abstract: The present invention relates to heteroleptic carbene complexes comprising at least two different carbene ligands, to a process for preparing the heteroleptic carbene complexes, to the use of the heteroleptic carbene complexes in organic light-emitting diodes, to organic light-emitting diodes comprising at least one inventive heteroleptic carbene complex, to a light-emitting layer comprising at least one inventive heteroleptic carbene complex, to organic light-emitting diodes comprising at least one inventive light-emitting layer, and to devices which comprise at least one inventive organic light-emitting diode.

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a pixel including a microlens array and a light-emitting device. The light-emitting device emits first light. The microlens array collects the first light. The microlens array includes a plurality of microlenses. The microlenses have a cross section having a shape with which they can be arranged with a filling factor higher than that of a circle on a plane parallel to the light-emitting device. The microlenses have a curved surface on a plane orthogonal to the plane parallel to the light-emitting device. The convex side of the curved surface faces the light-emitting device.

Abstract: Use of transition metal complexes of the formula (I) in organic light-emitting diodes where: M1 is a metal atom; carbene is a carbene ligand; L is a monoanionic or dianionic ligand; K is an uncharged monodentate or bidentate ligand selected from the group consisting of phosphines; CO; pyridines; nitriles and conjugated dienes which form a ? complex with M1; n is the number of carbene ligands and is at least 1; m is the number of ligands L, where m can be 0 or ?1; o is the number of ligands K, where o can be 0 or ?1; where the sum n+m+o is dependent on the oxidation state and coordination number of the metal atom and on the denticity of the ligands carbene, L and K and also on the charge on the ligands carbene and L, with the proviso that n is at least 1, and also an OLED comprising these transition metal complexes, a light-emitting layer comprising these transition metal complexes, OLEDs comprising this light-emitting layer, devices comprising an OLED according to the present invention, and specific tr

Abstract: An array substrate (100) includes a first type of electroluminescent diode (110). The first type of electroluminescent diode (110) includes a first electrode (111), alight emitting structure layer (112) comprising nanoparticles (114), and a second electrode (113) disposed in a stacked manner. The nanoparticles (114) may be configured to increase luminous efficiency of the first type of electroluminescent diode (110).

Abstract: A composition useful for the production of a light emitting device showing suppressed initial degradation, and a light emitting device formed by using the composition are provided. The composition contains a blended host material and a guest material, in which the host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed, the guest material contains an aromatic amine compound, and the total amount of a silicon atom contained in the host material and a silicon atom contained in the guest material is 20 ppm by mass or less with respect to the total amount of the host material and the guest material.

Abstract: Provided herein may be a display device and a method of manufacturing the same. The display device may include a display panel including a first surface, and a second surface opposite the first surface, a first auxiliary layer on the first surface of the display panel, and including at least one layer, a second auxiliary layer on the second surface of the display panel, and including at least one layer, and a side-reinforcing member enclosing cut surfaces of the display panel, the first auxiliary layer, and the second auxiliary layer.

Abstract: A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.

Abstract: A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

Abstract: A computing system includes memory configured to store instructions and a nozzle library, and a processor configured to access the memory and to execute the instructions. The instructions cause the computing system to select at least one nozzle unit as a selected at least one nozzle unit based on the nozzle library and to place the selected at least one nozzle unit at corresponding location coordinates, to create multiple volume meshes for the process chamber, and to simulate the flow of the gas through the selected at least one nozzle unit in the process chamber based on the multiple volume meshes in the process chamber. The nozzle library includes information about multiple nozzle units of which each has multiple volume meshes formed therein. The nozzle units have different shapes from each other.

Abstract: A method for manufacturing a vapor deposition mask including a resin layer, and a magnetic metal layer formed on the resin layer, the method including the steps of: providing a substrate; forming a resin layer by applying a solution including a resin material or a precursor solution of a resin material on a surface of the substrate, and then performing a heat treatment thereon; forming a magnetic metal layer on the resin layer, mask portion including a solid portion where a metal film is present and a hollow portion where the metal film is absent; forming a plurality of openings in a region of the resin layer that is located in the hollow portion of the mask portion; and removing the resin layer from the substrate after forming a plurality of openings in a region of the resin layer.

Abstract: A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.

Abstract: A Field Effect Transistor (FET) device and a method for manufacturing it are disclosed. The FET device contains a graphene layer, a composite gate dielectric layer disposed above the graphene layer, wherein the composite gate layer is passivated with fluorine, and a metal gate disposed above the composite gate dielectric layer. The method disclosed teaches how to manufacture the FET device.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

Abstract: A quantum dot includes a salt ligand at an outer surface thereof, the salt ligand including an anion and a cation, the cation having charge transporting properties. A light-emitting device includes an anode, a cathode, and an emissive layer disposed between the anode and the cathode, the emissive layer including multiple instances of the quantum dot. In some embodiments, the emissive layer is a crosslinked layer formed by depositing a mixture including the quantum dots on a layer, and subjecting at least a portion of the mixture to external activation stimuli to form the emissive layer including quantum dots dispersed in a crosslinked matrix.

Abstract: Novel composite heterojunctions, diodes, electrodes, and solar cells are comprised of semiconductive dichalcogenide flakes and metals or semi-metals like graphene. The dichalcogenide flakes and graphene flakes are deposed approximately normal to the device, enabling ohmic contact and mass production at low cost using printing equipment.

Abstract: The present disclosure is directed to an antenna that includes a substrate and a graphene or graphite layer positioned on at least a portion of the substrate. The graphene or graphite layer includes a first zone having a first thickness along a vertical direction of the antenna and a second zone having a second thickness along the vertical direction of the antenna. The second thickness is less than the first thickness such that the second zone has a greater electrical resistance than the first zone.

Abstract: A method for forming a carbon fiber-reinforced polymer matrix composite by distributing carbon fibers or nanotubes into a molten polymer phase comprising one or more molten polymers; and applying a succession of shear strain events to the molten polymer phase so that the molten polymer phase breaks the carbon fibers successively with each event, producing reactive edges on the broken carbon fibers that react with and cross-link the one or more polymers. The composite shows improvements in mechanical properties, such as stiffness, strength and impact energy absorption.

Abstract: Provided are plasmon resonance imaging devices having metal-insulator-metal nanocups and methods of use thereof.

Abstract: There is provided a vapor deposition mask including: a resin mask including a resin mask opening corresponding to a pattern to be produced by vapor deposition; and a metal layer partially positioned on one surface of the resin mask.

Abstract: An integrated flexible thermoelectric device includes p-type carbon nanoparticle regions and n-type carbon nanoparticle regions which are alternately and continuously connected to each other. In particular, the p-type carbon nanoparticle regions and the n-type carbon nanoparticle regions are formed on the one carbon nanoparticle paper.

Abstract: A manufacturing method for carbon nanotube composite film is disclosed. The method comprises steps of: providing a substrate; coating a first aqueous solution dissolved with a charged polymer on a substrate to form a polymer film; dispersing a single-wall carbon nanotube powder into a second aqueous solution dissolved with a charged compound in order to obtain a semiconductor-type single-wall carbon nanotube aqueous solution, and charge properties of the charged compound and the charged polymer are opposite; coating the semiconductor-type single-wall carbon nanotube aqueous solution on the polymer film; after standing for a predetermined period of time, washing with a deionized water to remove an unabsorbed semiconductor-type single-wall carbon nanotube and excess charged polymer; and air drying, forming a carbon nanotube film on the polymer film. A manufacturing method for carbon nanotube TFT and a carbon nanotube TFT are also disclosed. The carbon nanotubes can be well tiled onto the substrate.

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

Abstract: The disclosure discloses a fabricating method of an OLED device, including the following steps: coating a polyimide material on a glass substrate to form a base substrate, the base substrate including a material capable of absorbing water and oxygen; fabricating an OLED device layer on the TFT layer; the disclosure also discloses a corresponding OLED device. In the embodiment of the disclosure, the water and oxygen blocking performance of the PI layer in the OLED device can be enhanced, and the service life of the OLED device can be improved.

Abstract: A single phase liquid formulation useful for producing an organic charge transporting film; said formulation comprising: (a) a first polymer resin having Mw less than 5,000; (b) a second polymer resin having Mw at least 7,000; (c) a first solvent having a boiling point from 50 to 165° C.; and (d) a second solvent having a boiling point from 180 to 300° C.

Abstract: A display panel and a method for manufacturing the same are provided. The display panel comprises a substrate, an OLED device, a cover, at least one shielding element, and a sealant. The substrate has a first surface, and the OLED device is disposed on the first surface. The cover has a second surface, and the substrate and the cover are assembled into one piece, and the first surface and the second surface face each other. The shielding element is disposed on the second surface, and the sealant is disposed between the substrate and the cover.

Abstract: Disclosed are a thin film transistor and a manufacture method thereof. The thin film transistor according to the embodiments of the present disclosure comprises: a base substrate; an active layer composed of polysilicon on the base substrate; and a first gate insulating layer having a preset intrinsic tensile stress on the active layer.

Abstract: An electron microscope specimen includes a first electron-transport layer, a second electron-transport layer, a spacer layer, and a carrier layer. The second electron-transport layer has a first opening, a second opening, and a viewing area, wherein the viewing area is between the first opening and the second opening. The spacer layer is sandwiched between the first electron-transport layer and the second electron-transport layer, and the spacer layer has an accommodating space communicating with the first opening and the second opening. The carrier layer is disposed on the second electron-transport layer, and has a viewing window, a first injection hole, and a second injection hole, wherein the viewing window is substantially aligned with the viewing area and the accommodating space, and the first injection hole and the second injection hole respectively communicate with the first opening and the second opening.

Abstract: A metal sheet has a longitudinal direction and a width direction. The metal sheet has shapes in the width direction that are taken at different positions in the longitudinal direction of the metal sheet and differ from one another. Each of the shapes is an undulated shape including protrusions and depressions repeating in the width direction of the metal sheet. A length in the width direction of a surface of the metal sheet is a surface distance. A minimum value of surface distances at different positions in the longitudinal direction of the metal sheet is a minimum surface distance. A ratio of a difference between a surface distance and the minimum surface distance to the minimum surface distance is an elongation difference ratio in the width direction. A maximum value of elongation difference ratios is less than or equal to 2×10?5.

Abstract: A method of manufacturing a display device is provided. A method of manufacturing a display device comprises preparing a thin film forming apparatus including a crucible, which stores a source material for forming a thin film, and a front heatsink, which is disposed on the crucible and includes a reflective plate, wherein the reflective plate has a first surface with a first reflectivity and a second surface with a second reflectivity, which is different from the first reflectivity; and forming a thin film on a substrate by evaporating the source material of the thin film forming apparatus.

Abstract: A display device production method for producing a display device including a light emitting element in an active region and a terminal in a non-active region. The display device production method includes arranging a first mask overlapping with an electrode region of the light emitting element and a second mask overlapping with the terminal, on a conductive film that is arranged in the active region and the non-active region and that covers the terminal, and etching the conductive film.

Abstract: Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

Abstract: A method of forming a structure comprises forming a pattern of self-assembled nucleic acids over a material. The pattern of self-assembled nucleic acids is exposed to at least one repair enzyme to repair defects in the pattern. The repaired pattern of self-assembled nucleic acids is transferred to the material to form features therein. A method of decreasing defect density in self-assembled nucleic acids is also disclosed. Self-assembled nucleic acids exhibiting an initial defect density are formed over at least a portion of a material and the self-assembled nucleic acids are exposed to at least one repair enzyme to repair defects in the self-assembled nucleic acids. Additional methods are also disclosed.

Abstract: Disclosed is a nanopatch graphene composite, which includes graphene including a defect and a nanopatch positioned on the defect, and is configured such that a nanopatch is formed through a self-assembling process on the surface of graphene, thus improving the mechanical properties and durability of the graphene composite. Also, a flexible organic transistor, including the nanopatch graphene composite of the invention, is transparent and has high mechanical durability, thus exhibiting device stability, and the molecular alignment of the organic semiconductor layer growing on the nanopatch graphene composite is induced so as to become favorable for charge injection, thereby increasing the performance of the device.

Abstract: Disclosed are a method for manufacturing an OLED device and an OLED device obtained by the method, and a method for manufacturing a display panel and a display panel obtained by the method, which can solve the problem that the film thickness of an organic functional layer in the existing OLED device is uneven. The method for manufacturing the OLED device includes: forming a pixel defining layer on a substrate and forming accommodating portions in the pixel defining layer; adding ink to the accommodating portions to form an organic functional layer, wherein the ink includes a first organic solvent and a second organic solvent; and the first organic solvent and the second organic solvent have the same kind of lyophilic property or lyophobic property, and the first organic solvent and the second organic solvent have different boiling points and different degrees of lyophilic property or lyophobic property.

Abstract: Use of transition metal complexes of the formula (I) in organic light-emitting diodes where: M1 is a metal atom; carbene is a carbene ligand; L is a monoanionic or dianionic ligand; K is an uncharged monodentate or bidentate ligand selected from the group consisting of phosphines; CO; pyridines; nitriles and conjugated dienes which form a ? complex with M1; n is the number of carbene ligands and is at least 1; m is the number of ligands L, where m can be 0 or ?1; o is the number of ligands K, where o can be 0 or ?1; where the sum n+m+o is dependent on the oxidation state and coordination number of the metal atom and on the denticity of the ligands carbene, L and K and also on the charge on the ligands carbene and L, with the proviso that n is at least 1, and also an OLED comprising these transition metal complexes, a light-emitting layer comprising these transition metal complexes, OLEDs comprising this light-emitting layer, devices comprising an OLED according to the present invention, and specific tr

Abstract: A method for manufacturing a vapor deposition mask includes providing a substrate including a plastic film. An electrostatic protection film is placed on a surface of the plastic film. The substrate combined with the electrostatic protection film is fixed on a frame and tension applied. The plastic film is etched to form at least one opening in the plastic film and the electrostatic protection film is removed, leaving a vapor deposition mask. The manufacturing method prevents movement during manufacture and moisture and scratches during vapor deposition, and particles (debris) or otherwise during etching are non-existent.

Abstract: An OLED package structure includes a first outer bound confinement layer formed on an OLED device, a first outer bound confinement layer arranged on the first inorganic layer and enclosing and delimiting a confinement space, a first organic layer formed on the first inorganic layer in the confinement space, and a second inorganic layer arranged on the first organic layer and the first outer bound confinement layer, such that a peripheral portion of the second inorganic layer is positioned on and supported by the first outer bound confinement layer and a central portion of the second inorganic layer is partly received in the confinement space to have a bottom of the second inorganic layer positioned on and contacting a top of the first organic layer.

Abstract: A method of patterning a device is disclosed using a resist precursor structure having at least two fluoropolymer layers. A first fluoropolymer layer includes a first fluoropolymer material having a fluorine content of at least 50% by weight and is substantially soluble in a first hydrofluoroether solvent or in a first perfluorinated solvent, but substantially less soluble in a second hydrofluoroether solvent relative to both the first hydrofluoroether and the first perfluorinated solvent. The second fluoropolymer layer includes a second fluoropolymer material having a fluorine content less than that of the first fluoropolymer material and is substantially soluble in the first or second hydrofluoroether solvents, but substantially less soluble in the first perfluorinated solvent relative to both the first and second hydrofluoroether solvents.

Abstract: Described here is a method for improving the catalytic activity of an electrocatalyst, comprising subjecting the electrocatalyst to 1-10 galvanostatic lithiation/delithiation cycles, wherein the electrocatalyst comprises at least one transition metal oxide (TMO) or transition metal chalcogenide (TMC). Also described here is an electrocatalyst and a water-splitting device comprising the electrocatalyst.

Abstract: A flexible liquid crystal display panel and a display device are disclosed. The flexible liquid crystal display panel comprises: a first flexible substrate and a second flexible substrate arranged oppositely; a first polarizer on a side of the first flexible substrate facing away from the second flexible substrate; a second polarizer on a side of the second flexible substrate facing away from the first flexible substrate; and a positive C plate compensation film and a first negative A plate compensation film arranged on the second flexible substrate; the positive C plate compensation film is arranged between the second flexible substrate and the first negative A plate compensation film. The light leakage defect of a visual angle greater than zero in a dark state can be overcome, which occurs since the absorption axis of the first polarizer and the absorption axis of the second polarizer are not perpendicular to each other.