Abstract: The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

Abstract: A thin film transistor (“TFT”) includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode and a semiconductor layer. The gate insulating layer is disposed on the gate electrode. The source electrode is disposed on the gate insulating layer. The drain electrode is disposed on the gate insulating layer. The drain electrode is spaced apart from the source electrode. The semiconductor layer is disposed on the gate insulating layer. The semiconductor layer makes contact with a side surface of the source electrode and a side surface of the drain electrode.

Abstract: Semiconductor devices useful as light emitting diodes or power transistors are provided. The devices produced by depositing a Zn—O-based layer comprising nanostructures on a Si-based substrate, with or without a metal catalyst layer deposited therebetween. Furthermore, a pair of adjacent p-n junction forming layers is deposited on the ZnO-based layer, where one of the pair is an n-type epitaxial layer, and the other is a p-type epitaxial layer. One or more epitaxial layers may, optionally, be deposited between the ZnO-based layer and the pair of adjacent p-n junction forming layers.

Abstract: Ink compositions comprising polythiophenes and aprotic organic solvents that are formulated for inkjet printing the hole injecting layer (HIL) of an organic light emitting diode (OLED) are provided. Also provided are methods of inkjet printing the HILs using the ink compositions.

Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.

Abstract: The disclosure relates to providing printed structures of polymer that have substantially flat printed surfaces. In one embodiment, the disclosure relates to a post-printing treatment apparatus for receiving a substrate supporting a polymer printing thereon. The polymer can be PMMA or other suitable polymer. In a related embodiment, the polymer defines a thermoplastic polymer having a glass transition temperature. The apparatus can comprise of a chamber, and input manifold, an exhaust manifold, a solvent reservoir and a gas reservoir. The solvent reservoir provides one or more solvent systems adapted to chemically bind, and potentially react, with the polymer. The gas reservoir provides one or more gases for drying the substrate and printed polymer after the solvent treatment step. In one application, a substrate having printed surface thereon is placed in the chamber and exposed to the solvent system for sufficient period of time to provide substantially flat print surfaces.

Abstract: An anisotropic conductor and a method of fabrication thereof. The anisotropic conductor includes an insulating matrix and a plurality of nanoparticles disposed therein. A first portion of the plurality of nanoparticles provides a conductor when subjected to a voltage and/or current pulse. A second portion of the plurality of the nanoparticles does not form a conductor when the voltage and or current pulse is applied to the first portion. The anisotropic conductor forms a conductive path between conductors of electronic devices, components, and systems, including microelectromechanical systems (MEMS) devices, components, and systems.

Abstract: An organic semiconducting compound comprising the structure of formula (I): where Ar1, Ar2, Ar3 and Ar4 independently comprise monocyclic aromatic rings and at least one of Ar1, Ar2, Ar3 and Ar4 is substituted with at least one substituent X, which in each occurrence may be the same or different and is selected from the group consisting of (i) optionally substituted straight, branched or cyclic alkyl chains with 1 to 20 carbon atoms, alkoxy, amino, amido, silyl or alkenyl, or (ii) a polymerizable or reactive group selected from the group consisting of halogens, boronic acids, diboronic acids and esters of boronic acids and diboronic acids, alkylene groups and stannyl groups, and where Ar1, Ar2, Ar3 and Ar4 may each optionally be fused to one or more further rings. The organic semiconducting compound is used as an active layer in an organic semiconducting device such as a thin film transistor.

Abstract: According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.

Abstract: An organic electroluminescence device including: an anode (10), a cathode (70), an emitting layer (40) including an organic compound, which is between the anode (10) and the cathode (70), two or more layers arranged in a hole injection and transport region which is between the anode (10) and the emitting layer (40), and one or more layers arranged in an electron injection and transport region which is between the emitting layer (40) and the cathode (70), wherein a layer in the hole injection and transport region, which is in contact with the emitting layer (40), includes an aromatic amine derivative having a carbazole skeleton, one of the layers other than the layer in contact with the emitting layer (40) in the hole injection and transport region includes one or more materials selected from the group consisting of thiophene derivatives, tricyclic or more cyclic fused aromatic derivatives, amine derivatives excluding the compound represented by the following formula (A), conductive polymers, CFx, CuPc, transi

Abstract: Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

Abstract: Provided is a method of manufacturing an organic electroluminescence display device including an organic electroluminescence element, which has element characteristics comparable to those in the case of a vacuum in-situ process, while utilizing a patterning approach based on photolithography. The method of manufacturing an organic electroluminescence display device includes: an organic compound layer-forming step of forming an organic compound layer at least on a first electrode; a release layer-forming step of forming a release layer on the organic compound layer; a release layer-processing step of processing the release layer; and an organic compound layer-processing step of removing the organic compound layer in a region not covered with the release layer processed in the release layer-processing step, and at least the lowermost layer out of the release layer is a deposited film formed of a material soluble in a polar solvent.

Abstract: There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.

Abstract: A semiconductor chip has shapes on a particular level that are small enough to require a first mask and a second mask, the first mask and the second mask used in separate exposures during processing. A circuit on the semiconductor chip requires close tracking between a first and a second FET (field effect transistor). For example, the particular level may be a gate shape level. Separate exposures of gate shapes using the first mask and the second mask will result in poorer FET tracking (e.g., gate length, threshold voltage) than for FETs having gate shapes defined by only the first mask. FET tracking is selectively improved by laying out a circuit such that selective FETs are defined by the first mask. In particular, static random access memory (SRAM) design benefits from close tracking of six or more FETs in an SRAM cell.

Abstract: Fabricating a vertical thin film transistor includes printing a polymeric inhibitor in a cap pattern on a structural polymer layer on a substrate. A polymeric inhibitor is printed in a gate pattern on the substrate, in a dielectric pattern on the substrate, in a semiconductor pattern on a patterned conformal dielectric layer, and in an electrode pattern. The electrode pattern includes an open area over a portion of a reentrant profile that allows the polymeric inhibitor to wick along the reentrant profile in the open area. Fabrication of the vertical transistor also includes depositing an inorganic thin film, a first conductive thin film, a dielectric thin film, a semiconductor thin film, and a second conductive thin film using an atomic layer deposition (ALD) process.

Abstract: According to an embodiment, a non-volatile memory device includes a first interconnection extending in a first direction, a plurality of second interconnections provided side by side on the first interconnection and extending in a second direction intersecting the first direction and a memory layer provided on a side surface of each second interconnection. The device also includes a control element provided between each of the second interconnections and the first interconnection, an element part extending in the second direction, and a control electrode facing a side surface of the element part via a first insulating film. An adjustment part is provided on the first interconnection and adjacent to a control element connected to a second interconnection disposed at an end position of the second interconnections arranged in the first direction, and a first outer electrode provided between the adjustment part and the control element disposed at the end position.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: The composition described here comprises at least one hole-transporting compound, wherein the hole-transporting compound comprises a core covalently bonded to at least two arylamine groups, wherein the arylamine group optionally comprises one or more intractability groups. The composition can provide good film formation and stability when coated onto hole injection layers. Solution processing of hole transporting layers of OLEDs can be achieved with the composition described here. Good mobility can be achieved.

Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.

Abstract: Fluoroacyl arylamines are disclosed for use in an electronic applications, such as, in photoresponsive and electroresponsive devices.

Abstract: Methods and systems for altering the electrical resistance of a wiring path. The electrical resistance of the wiring path is compared with a target electrical resistance value. If the electrical resistance of the wiring path exceeds the target electrical resistance value, an electrical current is selectively applied to the wiring path to physically alter a portion of the wiring path. The current may be selected to alter the wiring path such that the electrical resistance drops to a value less than or equal to the target electrical resistance value.

Abstract: An organic light emitting display device includes a light shield layer formed on a substrate and a buffer layer formed on an entire surface of the substrate, an oxide semiconductor layer and first electrode formed on the buffer layer, a gate insulation film and gate electrode formed on the oxide semiconductor layer while being deposited to expose both edges of the oxide semiconductor layer, an interlayer insulation film formed to expose both the exposed edges of the oxide semiconductor layer and the first electrode, source and drain electrodes connected with one edge and the other edge of the oxide semiconductor layer, respectively, and a protective film formed to cover the source and drain electrodes while exposing a region of the first electrode so as to define a luminescent region and a non-luminescent region.

Abstract: A method for manufacturing an organic electroluminescence device includes: preparing the organic electroluminescence device that includes a lower electrode, an organic layer including a light-emitting layer and formed on the lower electrode, an upper electrode formed on the organic layer, and an encapsulating layer formed on the upper electrode, and has a part in which the lower electrode and the upper electrode are shorted; and forming a mixed layer in which a constituent material of the upper electrode and at least one of constituent materials of the organic layer and the thin-film encapsulating layer which are adjacent to the upper electrode are mixed, by irradiating at least one of the shorted part and a region around the shorted part with an ultrashort pulse laser.

Abstract: To form stabilized organic light-emitting medium layers using the relief printing method and to provide an organic EL element excellent in terms of pattern-forming accuracy, film thickness uniformity and light-emitting characteristics, a substrate 2, first electrode layers 3 provided on the substrate 2, organic light-emitting medium layers 5 which are provided on the first electrode layers 3 and emit light when electrically connected, and second electrodes 6 which are provided on the organic light-emitting medium layers 5 and make the organic light-emitting medium layers 5 electrically connected when voltage is applied between the first electrodes 3 and the second electrodes are provided. In addition, at least one of the organic light-emitting medium layers 5 is formed of a mixture containing a polymer material having a weight-average molecular weight in a range of 1.5 million to 25 million and at least one low molecular material having a non-repetitive structure.

Abstract: In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

Abstract: The organic electroluminescence display device has a laminated portion on a base substrate. The device may have a cavernous portion formed by exploding a part of the laminated portion in a screening processing. A protective layer is formed to cover a whole surface of a wall defining the cavernous portion. Therefore, substances contained in the air are prevented from contacting to an organic electroluminescence layer at least partially defining the cavernous portion. Therefore, even if moisture is contained in the air, it is possible to prevent moisture from being absorbed by the organic electroluminescence layer. Moreover, since moisture is not absorbed by the organic electroluminescence layer, it is possible to reduce irregular spot on the device. In addition, it is possible to reduce a short circuit at an open defective portion.

Abstract: A method of manufacturing an organic light-emitting display device is provided. An alignment master member is loaded on a moving unit. An organic layer deposition assembly is pre-aligned to the alignment master member. After the pre-aligning of the organic layer deposition assembly, a substrate is loaded on the moving unit. The organic layer deposition assembly is aligned to the substrate positioned as is after the loading of the substrate. An organic layer is formed on the substrate while the moving unit is moving along the moving direction. While the moving unit is moving along the moving direction, the organic layer deposition assembly is adjusted so that an interval between the organic layer deposition assembly and part of the substrate is maintained as substantially constant. The part of the substrate receives a deposition material emitted from the organic layer deposition assembly to form the organic layer.

Abstract: A deposition apparatus includes (i) a sheet including a slit area, first and second dummy slit areas, and a binding area; and (ii) a frame. The slit area has a plurality of patterning slits that are extended along a first direction and arranged along a second direction crossing the first direction. The first and second dummy slit areas are outside the slit area along the second direction and along the opposite direction to the second direction respectively and have a plurality of dummy slits. The binding area surrounds the slit area and the first and second dummy slit areas. The frame is attached to the binding area of the sheet and shields at least some of the plurality of dummy slits of the first and second dummy slit areas.

Abstract: A combination of host materials suitable for co-evaporation or premix evaporation, and devices containing the combination of host materials are provided. The combination of host materials provides improved lifetime and efficiency. A method for fabricating devices containing the host material combination is also provided.

Abstract: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.

Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.

Abstract: The present invention relates to a method for avoiding short circuit of metal circuit lines in an OLED display device, including the steps of: forming an inorganic layer on a substrate; forming a patterned metal layer on the inorganic layer, wherein the patterned metal layer includes more than two metal circuit lines; forming a patterned organic layer on the patterned metal layer, wherein the patterned organic layer is provided with an island area at its edge and between every two adjacent metal circuit lines, which has a height lower than that of other periphery areas of the patterned organic layer; forming an ITO layer on the patterned organic layer.

Abstract: Particles having a property of absorbing carbon at a particular temperature or higher are deposited on a graphene. The particles are heated to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene under the particles. The particles are removed. Consequently, a graphene nanomesh is obtained.

Abstract: The present invention provides a method of patterning an electronic or photonic material on a substrate comprising: forming a film of said electronic or photonic material on said substrate; and using a fluoropolymer to protect regions of said electronic or photonic material during a patterning process.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: The present invention relates to polymers comprising a repeating unit of the formula (I), and compounds of formula (VIII), or (IX), wherein Y, Y15, Y16 and Y17 are independently of each other a group of formula (I), and their use as organic semiconductor in organic electronic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers and compounds according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Abstract: The present invention relates to polymers, comprising a repeating unit of the formula (I), and compounds of formula (II), wherein Y, Y15, Y16 and Y17 are independently of each other a group of formula (a) characterized in that the polymers and compounds comprise silicon-containing solubilizing side chains and their use as organic semiconductor in organic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers and compounds according to the invention are used in organic field effect transistors, organic photovoltaics and photodiodes.

Abstract: An organic light-emitting element comprising: an anode; a cathode; banks; a functional layer between the anode and the cathode; and a hole injection layer between the anode and the functional layer. The functional layer includes at least a light-emitting sublayer defined by the banks and that contains an organic material. The hole injection layer comprises tungsten oxide and includes a crystal of the tungsten oxide, whose particle diameter is on an order of nanometers. Tungsten atoms constituting the tungsten oxide include both tungsten atoms with a valence of six and tungsten atoms with a valence less than six. The hole injection layer has a surface facing the functional layer, and a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions, thereby forming a recessed structure having a recessed portion whose inner surface is in contact with the functional layer.

Abstract: An organic light-emitting element comprising: an anode; a cathode; banks; a functional layer between the anode and the cathode; and a hole injection layer between the anode and the functional layer. The functional layer includes one or more sublayers including a light-emitting sublayer defined by the banks and that contains an organic material. The hole injection layer comprises tungsten oxide, includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy, has a surface facing the functional layer, and has a recessed structure such that a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions. The recessed structure has a recessed portion whose inner surface is in contact with the functional layer.

Abstract: Bicyclic guanidine compounds are described. Metal bicyclic guanidinate and its use in vapor deposition processes to deposit a metal-containing thin film are also described. Methods of making alkaline earth metal N,N?dialkylacetamidinates or bicyclic guanidinates including dissolution of alkaline earth metal into liquid ammonia followed by addition of a solution of an amidine or guanidine ligand in the free base from are provided.

Abstract: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.

Abstract: Disclosed is a display apparatus. The display apparatus includes: a display module including a flexible substrate, a display panel, and an encapsulation film; a lower module disposed below the display module; an upper module disposed on the display module; and an elasticity-adjusting layer disposed on or below the display module to adjust a position of a neutral plane in bending of the display apparatus, wherein an elastic modulus of the elasticity-adjusting layer is less than that of at least one of the display module, the lower module, or the upper module, so as to position the neutral plane within or proximate to the display module.

Abstract: An organic light emitting diode display and a method of manufacturing the same, the display including a substrate; a plurality of thin film transistors on the substrate; a protective film covering the plurality of thin film transistors; a pixel electrode on the protective film; a pixel defining film on the protective film, the pixel defining film having an opening exposing the pixel electrode; an organic emission layer on the pixel electrode and the pixel defining film; and a common electrode covering the organic emission layer, wherein a cross-section of an opening sidewall of the opening in the pixel defining film has a rounded shape.

Abstract: The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed.

Abstract: An organic nanofiber including a gelled organic semiconductor compound. Also disclosed is an organic semiconductor transistor and a method of manufacturing an organic semiconductor transistor.

Abstract: A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

Abstract: Various aspects of the instant disclosure are directed to methods and to apparatuses involving spin-coating and spin-coated materials. As may be implemented in connection with one or more embodiments, a solution having objects dispersed therein is applied to a substrate and the substrate is spun about an axis that is off-center relative to a center of the substrate. The objects are thus aligned along a predominantly unidirectional orientation. The solution is solidified with the objects aligned to one another along the predominantly unidirectional orientation.

Abstract: The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.

Abstract: Discussed is a method of fabricating an organic light emitting diode display device capable of simplifying a manufacturing process by forming a photoresist pattern to cover a metal pattern to prevent a hole common layer and an electron common layer from being formed on the metal pattern.

Abstract: The present invention provides a preparation method for organic solar cells having conductive nanorods. In the process of solar cells, the present invention etches the indium-tin-oxide layer, which used as the anode, using etching fluid and forms the structure of the conductive nanorods thereon. Thereby, the distance of the holes in the active layer conducted to the anode is shorted. Besides, the light scattering or the transmittivity of the indium-tin-oxide layer is increased, which improves the efficiency of photoelectric conversion in organic solar cells.