Abstract: A method is provided for forming an epoxy-based planarization layer overlying an organic semiconductor (OSC) film. Generally, the method forms a fluoropolymer passivation layer overlying the OSC layer. A photopatternable adhesion layer is formed overlying the fluoropolymer passivation layer, and patterned. A photopatternable planarization layer, comprising an epoxy-based organic resin, is formed overlying the photopatternable adhesion layer and patterned to expose the fluoropolymer passivation layer. Then, the fluoropolymer passivation layer is plasma etched to expose the OSC layer. More explicitly, the method can be used to fabricate a bottom gate or top gate organic thin-film transistor (OTFT). Top gate and bottom gate OTFT devices are also provided.

Abstract: A method of forming patterns on a substrate, the method including: placing a mask having an opening defining a portion of one surface of a substrate on which patterns are to be formed on the substrate; forming a first modification layer in the opening by ejecting a surface modification ink onto a surface of the substrate through the opening; ejecting a target ink having droplets of sizes larger than those of a surface modification ink such that the target ink is distributed on the first modification layer in the opening; and removing the mask.

Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.

Abstract: A device includes a light emitting assembly including at least one light panel including at least one phosphorescent organic light emitting device. A total light emitting area of the light emitting assembly is greater than 1000 cm2. The device exhibits a luminous emittance of at least 7000 lm/m2 and a peak luminance of less than 5000 cd/m2. The light emitting assembly has a luminaire emissive utilization of at least 60 percent.

Abstract: An organic light emitting diode display device, comprises: a thin film transistor on a substrate; a first insulating layer on the thin film transistor; a connecting electrode connected to the thin film transistor and a first auxiliary electrode on the first insulating layer; a second insulating layer on the connecting electrode and the first auxiliary electrode; an anode connected to the connecting electrode and a second auxiliary electrode spaced apart from the anode and connected to the first auxiliary electrode on the second insulating layer; a bank layer having a first contact hole exposing the anode and a second contact hole exposing the second auxiliary electrode on the anode and the second auxiliary electrode; an organic emitting layer on the anode in the first contact hole; and a cathode electrically connected to the second auxiliary electrode on the organic emitting layer.

Abstract: Provided are a novel heterocyclic compound represented by formula (1), and a field-effect transistor having a semiconductor layer comprising the aforementioned compound. Also provided is a method for producing an intermediate enabling the production of the aforementioned novel heterocyclic compound. (In the formula, R1 and R2 represent a hydrogen atom, a C2-16 alkyl group or an aryl group. However, when R1 each independently represents a C2-16 alkyl group or an aryl group, R2 represents a hydrogen atom or each independently represents an aryl group; and when R1 represents a hydrogen atom, R2 each independently represents an aryl group.

Abstract: A method of fabricating a nanoshell is disclosed. The method comprises coating a nanometric core made of a first material by a second material, to form a core-shell nanostructure and applying non-chemical treatment to the core-shell nanostructure so as to at least partially remove the nanometric core, thereby fabricating a nanoshell. The disclosed nanoshell can be used in the fabrication of transistors, optical devices (such as CCD and CMOS sensors), memory devices and energy storage devices.

Abstract: Phenanthro[9,10-b]furan polymers and small molecules for electronic applications. The present invention relates to polymers comprising a repeating unit of the formula (I), (II), (VIII), (IX) and compounds of formula (VIII), or (IX), wherein Y, Y15, Y16 and Y17 are independently of each other a group of formula (I), or (II), and their use as organic semiconductor in organic electronic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers and compounds according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Abstract: An electronic component may include an electrically active region, having a first contact pad, a second contact pad, an organic functional layer structure between the first contact pad and the second contact pad, at least one electrical terminal which is coupled to the first contact pad or to the second contact pad. The first contact pad and/or the second contact pad may include an encapsulation and an electrically conductive region. The encapsulation partly covers the electrically conductive region in such a way that a part of the first contact pad or of the second contact pad is exposed. The exposed region is completely laterally surrounded by encapsulation.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: An organic layer deposition apparatus, a method of manufacturing the same, and an organic light-emitting display apparatus using the same, and an organic light-emitting display apparatus manufactured using the method, are disclosed. An organic layer deposition apparatus is suitable for mass production of organic light-emitting display apparatuses on large-size substrates, and enables high-precision patterning. A method of manufacturing an organic light-emitting display apparatus by using the organic layer deposition apparatus, and an organic light-emitting display apparatus manufactured using the method, are disclosed.

Abstract: A vapor deposition apparatus, which is capable of performing a thin film deposition process and improving characteristics of a formed thin film, includes a chamber having an exhaust opening; a stage located in the chamber, and including a plurality of mounting surfaces on which the plurality of substrates may be mounted; and an injection unit having at least one injection opening for injecting a gas into the chamber in a direction parallel with surfaces of the plurality of substrates.

Abstract: Provided is an organic semiconductor layer including a mixture of a first polycyclic aromatic hydrocarbon to which a substituent R1 other than a hydrogen atom is bonded by a single bond, and a second polycyclic aromatic hydrocarbon.

Abstract: A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

Abstract: Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles.

Abstract: An organic light emitting diode (OLED) lighting apparatus includes a light emitting panel including an organic light emitting diode, a housing for housing the light emitting panel, a cover coupled to the housing and covering a front-side edge of the light emitting panel, a plurality of pins disposed between the housing and the light emitting panel and supporting an edge of the light emitting panel, and at least one contact bar disposed between the plurality of pins and a back-side edge of the light emitting panel.

Abstract: A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer; removing a portion of the second insulating layer to expose a portion of the first insulating layer and form a second well-defining bank; depositing a resist on the second insulating layer and on a portion of the exposed first insulating layer; removing the portion of the first insulating layer not covered by the resist, to expose a portion of the electronic substrate and form a first well-defining bank within the second well-defining bank; and removing the resist. The method can provide devices with reduced leakage currents.

Abstract: In an organic light emitting diode (OLED) display device and a method for fabricating the same, OLED pixels are patterned through a photolithography process, so a large area patterning can be performed and a fine pitch can be obtained, and an organic compound layer can be protected by forming a buffer layer of a metal oxide on an upper portion of the organic compound layer or patterning the organic compound layer by using a cathode as a mask, improving device efficiency. In addition, among red, green, and blue pixels, two pixels are patterned through a lift-off process and the other remaining one is deposited to be formed without patterning, the process can be simplified and efficiency can be increased.

Abstract: An IR sensor includes a suspended micro-platform having a support layer and a device layer disposed thereon. IR absorbers are disposed in or on the device layer. IR radiation received by the IR absorbers heats an on-platform junction of each of a plurality of series-connected thermoelectric devices operating in a Seebeck mode, the devices producing a voltage indicative of the received IR. Other thermoelectric devices are used to cool the platform, and a pressure sensing arrangement is used to detect loss of vacuum or pressure leaks.

Abstract: Provided are a magneto resistive element and a method of manufacturing the same, and in particular, a magneto resistive element and a method of manufacturing the same that may be applied to a digitizer sensing panel. The magneto resistive element includes a substrate, a first electrode disposed on the substrate, a first hole transport layer disposed on the first electrode, a first magneto resistive layer disposed on the first hole transport layer, wherein the first magneto resistive layer comprises an organic material, a first transport layer disposed on the first magneto resistive layer, a second magneto resistive layer disposed on the first transport layer, wherein the second magneto resistive layer comprises an organic material, a first electron transport layer disposed on the second magneto resistive layer, and a second electrode disposed on the first electron transport layer.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate, an organic light-emitting portion, a sealing member, and first and second connecting members. The organic light-emitting portion includes a first electrode positioned on the substrate, an organic light-emitting layer formed on the first electrode, and a second electrode formed on the organic light-emitting layer. The sealing member includes a first conductive layer positioned on the organic light-emitting portion and electrically connected to the second electrode, a second conductive layer electrically connected to the first electrode, and an insulating layer interposed between the first and second conductive layers. The first connecting member is connected to the first conductive layer to supply a first power source, and the second connecting member is connected to the second conductive layer to supply a second power source.

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

Abstract: A non-volatile memory device includes a gate electrode, a data storage layer provided on the gate electrode, and a source electrode and a drain electrode provided on the data storage layer and spaced apart from each other. The data storage layer comprises three layers that form hetero-interfaces and have different permittivities from one another.

Abstract: A field-effect transistor includes a semiconductor layer (14) having a portion functioning as a channel region. The semiconductor layer (14) includes, as its constituent components, a plurality of electrically conductive microparticles (52), organic semiconductor molecules (53) bonded to the microparticles (52) so as to link the microparticles to one another (52), and cyclic molecules. Each of the organic semiconductor molecules (53) includes a ?-electron conjugated chain as its main chain, and the ?-electron conjugated chain is insulated by cyclic molecules.

Abstract: According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.

Abstract: Methods and compositions to improve the performance of single-component polymer FETs is provided comprising processing a conjugated polymer in the presence of a processing additive. Also provided is a FET device fabricated with a processing additive. Such devices have increased saturation hole and/or electron mobility compared to a control FETs.

Abstract: A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.

Abstract: Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Abstract: There is provided an organic semiconductor material with which it is possible to manufacture an electronic element by a wet process which is low cost. Furthermore, the object is to provide an organic semiconductor electronic element which is hardly broken, light in weight and inexpensive, and has high characteristic. According to the present invention, it has been found that it is possible to provide an organic semiconductor material in which performance is improved and which is suitable for a wet process by optimizing a phthalocyanine derivative which configures a phthalocyanine nano-sized substance and the completion of the present invention has been reached. Furthermore, it is possible to provide an electronic element which has high durability, is hardly broken, light in weight, inexpensive and has high characteristic by using the organic semiconductor material in an electronic element active part (a semiconductor layer).

Abstract: An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

Abstract: A method for fabricating an organic photovoltaic cell includes providing a first electrode; depositing a series of at least seven layers onto the first electrode, each layer consisting essentially of a different organic semiconductor material, the organic semiconductor material of at least an intermediate layer of the sequence being a photoconductive material; and depositing a second electrode onto the sequence of at least seven layers. One of the first electrode and the second electrode is an anode and the other is a cathode. The organic semiconductor materials of the series of at least seven layers are arranged to provide a sequence of decreasing lowest unoccupied molecular orbitals (LUMOs) and a sequence of decreasing highest occupied molecular orbitals (HOMOs) across the series from the anode to the cathode.

Abstract: Methods of doping a solar cell, particularly a point contact solar cell, are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. At least one lithography step can be eliminated by the use of a blanket doping of species having one conductivity and a patterned counterdoping process of species having the opposite conductivity. The areas doped during the patterned implant receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In some embodiments, counterdoped lines are also used to reduce lateral series resistance of the majority carriers.

Abstract: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are provided. The organic light-emitting display device includes a plurality of pixels each including: a first region including a light-emitting region for emitting light, a first electrode and an emission layer covering the first electrode being located in the light-emitting region; and a second region including a transmissive region for transmitting external light through the display device. The display device also includes: a third region between the pixels; a first auxiliary layer in the first and third regions; a second electrode on the first auxiliary layer in the first and third regions; a second auxiliary layer covering the second electrode and located in the first and second regions and not in the third region; and a third electrode on the second electrode in the third region.

Abstract: The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.

Abstract: The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula *?A-D?* (I), or a polymer of formula *?A-D?x?B-D?y* (II), or *?A-D?r?B-D?s?A-E?t?B-E?u (III), and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Abstract: According to one embodiment, a thin film transistor includes a first insulating film, a gate electrode, a semiconductor layer, a gate insulator film, a second insulating film, a source electrode, a tunneling insulating portion, and a drain electrode. The semiconductor layer is provided between the gate electrode and the first insulating film, and includes an amorphous oxide. The gate insulator film is provided between the semiconductor layer and the gate electrode. The second insulating film is provided between the semiconductor layer and the first insulating film. The tunneling insulating portion is provided between the semiconductor layer and the source electrode, and between the semiconductor layer and the drain electrode, and between the first insulating film and the second insulating film. The tunneling insulating portion includes oxygen and at least one selected from aluminum and magnesium. A thickness of the tunneling insulating portion is 2 nanometers or less.

Abstract: An organic photovoltaic cell includes an anode and a cathode, and a plurality of organic semiconductor layers between the anode and the cathode. At least one of the anode and the cathode is transparent. Each two adjacent layers of the plurality of organic semiconductor layers are in direct contact. The plurality of organic semiconductor layers includes an intermediate layer consisting essentially of a photoconductive material, and two sets of at least three layers. A first set of at least three layers is between the intermediate layer and the anode. Each layer of the first set consists essentially of a different organic semiconductor material having a higher LUMO and a higher HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the cathode. A second set of at least three layers is between the intermediate layer and the cathode.

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract: A method of manufacturing an OLED display includes: forming an organic light emitting element on a first substrate; forming, on the organic light emitting element, a thin film encapsulation layer that seals the organic light emitting element with the first substrate; providing a second substrate; forming a flexible protection layer on the second substrate; attaching the first substrate and the second substrate to each other; and separating the second substrate from the flexible protection layer.

Abstract: An organic light emitting diode (OLED) display is provided. The OLED display includes: a substrate; a first electrode on the substrate; a first pixel defining layer exposing at least a portion of the first electrode; a medium layer on the first pixel defining layer and the first electrode, the medium layer including a first region and a second region; a second pixel defining layer overlapping the first pixel defining layer with the first region therebetween; a light emission layer overlapping the first electrode with the first region therebetween; and a second electrode covering the second pixel defining layer and the light emission layer.

Abstract: The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, In the chemical formula (I), R1 to R6 each represents a hydrogen atom, organooligosiloxane, or any substituent, at least one of R1 to R6 represents a monovalent substituent derived from organooligosiloxane, L1 and L2 each represents a single bond or a linking group, R7 to R10 each represents a lower alkyl group or a halogen, and o, p, q, and r each represents an integer from 0 to 2.

Abstract: The purpose of the present invention is to provide a transparent surface electrode that maintains high transparency, suppresses the occurrence of leak currents, and has superior storage stability and resistance to damage by bending, a method for manufacturing the same, and an organic electronic element using the same. This transparent surface electrode has a metal pattern conductive layer that contains a metal on a transparent base material, and the transparent surface electrode also has a transparent polymer conductive layer, which contains that base material and a conductive polymer, on that metal pattern conductive layer. The transparent surface electrode is characterized by the surface roughness (Ra (surface roughness provided for by JIS, B601 (1994))) of the metal pattern conductive layer being 20 nm or less, and the polymer conductive layer containing a non-conductive polymer having a hydroxyl group.

Abstract: Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.

Abstract: Provided is an organic electroluminescence element containing a light transmissive base material laminated thereon a transparent electrode, a light emitting layer and a counter electrode in this order, wherein the light transmissive base material contains a light transmissive resin substrate (resin substrate B) provided with a hard coat layer on both surfaces of the light transmissive resin substrate, the hard coat layers containing metal oxide nano particles; and the transparent electrode is formed on one hard coat layer (H1); and a rugged structure is formed on one surface of the other hard coat layer (H2), the one surface being opposite to another surface of the other hard coat layer (H2) which is contacted with the light transmissive resin substrate (resin substrate B).

Abstract: An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

Abstract: Provided is a method of manufacturing an organic electronic device using a pressure-sensitive adhesive film. The method of manufacturing an organic electronic device including an encapsulation layer having excellent moisture barrier property and adhesiveness may be provided. In addition, according to the manufacturing method, for example, though the encapsulation layer is formed on an entire surface of an organic electronic element, a flexibility phenomenon of the organic electronic device may be minimized, and the organic electronic device may be manufactured without damage to the organic electronic element for a short process time.

Abstract: A method of fabricating organic solar panels with transparent contacts. The method uses a layer-by-layer spray technique to create the anode layer. The method includes placing the substrate on a flat magnet, aligning a magnetic shadow mask over the substrate, applying photoresist to the substrate using spray photolithography, etching the substrate, cleaning the substrate, spin coating a tuning layer on substrate, spin coating an active layer of P3HT/PCBM on the substrate, spray coating the substrate with a modified PEDOT solution, and annealing the substrate.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed.

Abstract: The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.

Abstract: An organic light emitting diode display device constructed with an organic light emitting element including a first electrode, an organic emission layer, and a second electrode sequentially laminated together, a transmittance control layer formed on the organic light emitting element, a selective reflective layer formed on the transmittance control layer, a polarizing plate formed on the selective reflective layer, and a phase retardation plate disposed between the organic light emitting element and the polarizing plate.