Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: The polishing machine processes a workpiece put on table of body by four-directional control and is provided with a pair of columns. It comprises: first carrying unit having both ends fixed to pair of columns and having carrying part mounted on upper side; a second carrying unit being fixed to the carrying part in the direction orthogonal to the first carrying unit; third carrying unit being fixed to one end of the second carrying unit in the direction orthogonal to the second carrying unit; a tool head unit being mounted to lower side of the third carrying unit to be inclinable at predetermined angle by a tilting unit rotating at a constant angle and having driving means for rotating a polishing tool mounted at one side; and automatic constant pressure regulating means providing a predetermined virtual pressure with respect to the polishing tool mounted on the tool head unit.

Abstract: Light is incident on a semiconductor wafer polish surface and an adjacent reference surface (80). The reflected light from each surface is detected by a detector (35) positioned beneath the surfaces. The signals derived from each source of reflected light is analyzed in a electronic system (37) and an endpoint for a chemical mechanical polish process is determined as a function of both signals.

Abstract: A chemical mechanical polishing apparatus has a polishing surface, a carrier head to press a substrate against the polishing surface with a controllable pressure, a motor to generate relative motion between the polishing surface and the carrier head at a velocity, and a controller. The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.

Abstract: The invention provides a method of reducing thermal distortion in grinding machines. Such machines each comprise a machine base (60) and a grinding wheel (50) for grinding components in the machine (10). The method includes the steps of: (a) sensing a first temperature at an upper surface of the base (60) substantially below a position (110) in the machine (10) whereat component grinding using the wheel (50) occurs; (b) sensing a second temperature of an underside surface of the base (60) substantially below the position (110) whereat component grinding occurs; (c) determining a relationship between component size drift and changes in a difference between the first and second temperatures; and thereafter (d) correcting a positional offset applied to the wheel (50) during grinding in accordance with the determined relationship, thereby reducing the component size drift.

Abstract: A method for planarizing the surface of a semiconductor wafer or device during manufacture. Dependencies of polish rate and substrate thickness on process parameters of downforce and polish speed, and on the characteristic product high feature area on the wafer, are explicitly defined and used to control Chemical-Mechanical Polish in Run-to-Run and real-time semiconductor production control applications.

Abstract: A length measure apparatus and the method for measuring transform an image from a lens set into a digital contrast image via a central processing unit. The CPU has multiple standard lines that are previously set therein. Multiple movement controllers control a movement of a selected standard line from the CPU relative to the digital contrast image. A movement value is output when the selected standard line flushes with a profile of the contrast image. The measure value is shown on a monitor when the CPU contrasts the movement of the selected standard line.

Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: The apparatus for lapping a magnetic head slider includes a lapping plate to which a bar of the magnetic head slider makes a contact by a predetermined lapping pressure, a primary oscillating mechanism that makes a primary oscillating of the bar in a radial direction of the lapping plate, and a secondary oscillating mechanism that makes a secondary oscillating of the bar in a direction perpendicular to a direction of the primary oscillating. A coarse lapping of the bar is performed by a combined oscillating of the primary oscillating and the secondary oscillating, and upon completion of the coarse lapping, the apparatus switches to the primary oscillating to finish lapping of the bar.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: This invention relates to apparatus and methods for z-axis control and collision detection and recovery for waterjet and abrasive-jet cutting systems. In one embodiment, an apparatus includes a linear rail, a slide member coupleable to a cutting head and slideably coupled to the linear rail, at least one actuator having a first end coupled to the slide member and a second end fixed with respect to the linear rail, a position sensor, and a controller. The actuator provides an adjustable support force that supports the weight of the cutting head, allowing the cutting head to be controllably positioned at a desired height above the workpiece. The actuator may include a pneumatic cylinder, or alternately, a linear motor.

Abstract: A device for processing the finish of work pieces. The device has a feed unit with a slide and an NC-controlled drive, a motorized spindle unit with a motor-driven tool spindle, and a force measurement device. The force measurement device is for measuring the contact pressure that is brought to bear upon the tool spindle in the course of processing a work piece. According to the invention, the motorized spindle unit is seated on the slide with resilient elements that accept the weight of the motorized spindle unit and are movable only in the direction of processing. The slide is supported on leaf springs, which are oriented perpendicular to the direction of advance of the slide. The force measurement device is arranged on the motorized spindle unit and on the slide between the connective elements.

Abstract: A process of machining spectacle lenses using of a CNC spectacle lens-machining machine is provided. The process includes positioning the rough-cast lens on a holder in the spectacle lens-machining machine, machining an optical surface and/or the edge of the rough-cast lens in accordance with predetermined optical and/or shape-related values, continuously or cyclically checking the position of the rough-cast lens on the holder during machining using a sensor, and continuously or cyclically incorporating any recorded displacement of the rough-cast lens on the holder in the spectacle lens-machining values.

Abstract: The proposed invention calculates the circumference of an optical lens taking into consideration external variations in lens size and shape. The invention, utilizing a uniquely designed optical lens tracing pen in conjunction with a specifically designed tracing template provides for a consistent method of measure with respect to the outermost ridge of a traced lens. The lens is traced utilizing the specifically designed invention pen, and scanned into a software system which receives the traced image and plots a lens shape based upon a calculated distance between first color template axis indicators and a second color pen tracing. The system further provides for a number of options to allow specification a prescription to be utilized in conjunction with the lens sizing information as well as the automated and transparent downloading of computer software and additional lens shape offerings reflected in updated versions of the invention.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and allows a polishing pad to be automatically replaced without stopping rotary or circulatory motion of a polishing table. The polishing apparatus comprises a polishing table for making rotary or circulatory motion, a top ring vertically movably disposed above the polishing table for removably holding a workpiece to be polished, a pair of rolls rotatable about their own axes and movable in unison with the polishing table, and a polishing pad which is wound on one of the rolls and supplied over an upper surface of the polishing table toward the other of the rolls.

Abstract: A grinding method for single-disc cylindrical grinding of elongated objects, such as cylindrical paper machine rollers, in which method the object to be grounded is rotated about its axis and a grinding stone is rotated and its position on the surface of the object being ground is adjusted so that the grinding point of the grinding stone is held substantially at a constant distance from the center axis of the object being ground regardless of the deflection of the object. In the method, the position of the grinding stone is adjusted using an oscillating positioning controller synchronized with the rotation of the roller and receiving feedback from a measured quantity that bears a linear correlation to the change of position of the surface being ground.

Abstract: An outer edge ring of a semiconductor wafer is polished to prevent delamination and peeling-off of at least one layer of material deposited near the outer edge of the semiconductor wafer during fabrication of integrated circuits. The semiconductor wafer is mounted on a wafer chuck, and the wafer chuck holding the semiconductor wafer is rotated such that the semiconductor wafer rotates. A polishing pad is moved toward the semiconductor wafer as the semiconductor wafer is rotating. The polishing pad has a polishing surface that faces and contacts the outer edge ring of the semiconductor wafer as the polishing pad is moved toward the semiconductor wafer to polish the outer edge ring of the semiconductor wafer. The outer edge ring has the at least one layer of material that is polished off by the polishing surface of the polishing pad.

Abstract: A dual semiconductor wafer slippage, or loss, and water-resistant sensor holder for chemical mechanical polishing (CMP) semiconductor fabrication equipment is disclosed. The holder has a body and a cover. The body is designed to hold two wafer slippage sensors at an angle to a vertical plane, such as substantially fifteen degrees, and has a window to allow the sensors to detect wafer slippage. The cover is situated over the window of the body to prevent slurry from spraying and drying onto the sensors during high-pressure rinse cleaning of a platen of the CMP semiconductor fabrication equipment.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: The apparatus for lapping a magnetic head slider includes a lapping plate to which a bar of the magnetic head slider makes a contact by a predetermined lapping pressure, a primary oscillating mechanism that makes a primary oscillating of the bar in a radial direction of the lapping plate, and a secondary oscillating mechanism that makes a secondary oscillating of the bar in a direction perpendicular to a direction of the primary oscillating. A coarse lapping of the bar is performed by a combined oscillating of the primary oscillating and the secondary oscillating, and upon completion of the coarse lapping, the apparatus switches to the primary oscillating to finish lapping of the bar.

Abstract: A belt wear optimizing system for a wood surface treating apparatus with a plurality of individual work stations arranged serially along an endless conveyor. Each station includes a working abrasive head along with an elevation control for adjustably positioning the contact surface of each abrasive head at a desired working distance from the opposed surface of the workpiece traveling along the endless conveyor. An incoming workpiece thickness detector is positioned at the infeed end, and additional workpiece thickness detectors are positioned downstream from each work station, with each being positioned to measure the thickness of the workpiece after it has passed through its preceding individual work station.

Abstract: A method and apparatus for simultaneously inspecting and grinding roll mills which utilizes a transducer assembly which produces a creeping wave propagation in conjunction with a couplant fluid provider and data acquisition circuit which allows the operator to see the crack and imperfections in on the surface of the mill rolls as they are rotated and to grind them off.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: An in-situ method and apparatus for monitoring wear of a dicing saw blade. The apparatus, which is mounted on a cooling block of the dicing saw, has a transmitter to emit a parallel beam of light onto a side surface of the dicing saw blade; a receiver for receiving the light that is un-obscured by the saw blade; and a processor coupled to the receiver for determining wear of the saw blade based on an output from the receiver. The apparatus may also display the wear rate of the saw blade, and/or an estimated time for replacement of the saw blade.

Abstract: An integrated lapping guide (ILG) is described including at least one read-head and an electronic lapping guide (ELG). In one embodiment, the ELG is offset from the height of the read-head. Resistance between the read-head and the ELG can be measured during the lapping process. During the initial phase of the lapping process, the ELG dominates the change in ILG resistance and provides a long-range stripe-height control allowing for inclination and bending of the row of magneto-resistive (MR) heads. During the latter phases of the lapping process, the read-head dominates the change in ILG resistance and provides a short-range, uniform read-head resistance control. In this embodiment, the transition between the long-range stripe-height control and the short-range, uniform read-head resistance control is smooth, providing a marked benefit to the read-head manufacturing process.

Abstract: The substrate polishing apparatus for polishing a polishing surface of a substrate comprises a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device, wherein the table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: An end surface polishing device and an end surface polishing method capable of controlling the polishing amount of the rod-shaped members and shortening the polishing processing time are disclosed. The end surface polishing device for polishing a rod-shaped member attached to a holder in a pushing way, with a polishing member attached to a polishing plate provided on a main body and supported in a rotational and slidable way, is provided with distance detecting means for detecting the relative position of the holder and the polishing plate and measuring means for measuring the actual polishing length of the rod-shaped member supported by the holder, from the position detected by the distance detecting means.

Abstract: In the continuous generation grinding of a gear the modifications of tooth trace contours and/or corrections of tooth trace deviations determined by flank measurement are specified separately for the left and right flanks (3, 4) of the gear (1). By means of these data, supplementary motions of the NC machine axes across the face width of the left flank (3) and the right flank (4) of the gear (1) are calculated in a control system of a gear flank grinding machine, by means of which a grinding worm produces the specified modified or deviation corrected tooth traces on the left flanks (3) and the right flanks (4) of the gear (1) in one and the same grinding stroke.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: An electrolytic polishing apparatus for electrolytic-polishing a conductive film subject to formed on a substrate including a resistance measuring unit for measuring the resistance of the film. The electrolytic polishing apparatus may also include a termination point detecting portion for detecting a termination point of polishing by reading a variation of the resistance value measured by the resistance measuring unit, or a polishing control portion for terminating electrolytic polishing on the basis of the termination point of polishing detected by the termination point detecting portion.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A hard machining process uses a cylindrical tool (21) of ceramic or other hard machining material of comparatively low cost that provides a circular cutting edge to be engaged in cutting relation with hardened workpiece (20) to be machined. As tool cutting edge wear occurs, the tool (21) is rotated through a small angle to bring into contact with the workpiece (20) a fresh portion of the cutting edge. It is not necessary to rotate that tool (21) sufficiently to effect replacement of the entire cutting edge portion in engagement with the tool. Sufficient angular movement of the tool is made to replace that of the cutting edge that has the greatest effect on the finish of the machined workpiece (20), which is the cutting location where the removed chip is thinnest.

Abstract: An apparatus for polishing or lapping an aspherical surface of a work piece comprises a tool rotatable about an axis, the working surface area of the tool being smaller than the work piece, and an arrangement by means of which the tool and the work piece are adjustable relative to each other in all three directions in space, by means of which the orientation of the tool relative to the work piece is adjustable about at least two axes, and by means of which the work piece is rotatable about an axis.

Abstract: There is disclosed a barrel-polishing apparatus comprising a polishing medium bath with polishing mediums received therein, a base, an arm mounted on the base, and a workpiece attachment device mounted on a distal end portion of the arm and adapted to attach a workpiece to the arm, wherein the polishing mediums are caused to flow within the polishing medium bath by an appropriate device and a pressing plate for pressing the polishing mediums is mounted on the polishing medium bath. A barrel-polishing method is also disclosed.

Abstract: A polishing pad having an optical assembly that does not cause excess wear on a wafer workpiece. The optical assembly is disposed within the pad such that it may move in response to forces applied to the optical assembly.

Abstract: An apparatus for and process of attaching a lens holder to an uncut lens for a spectacle lens which enables efficient attachment of the lens holder at a position without the processing interference when the lens holder is attached to a progressive multifocal lens or a multifocal lens. The lens holder can be attached to the uncut lens at a position set outside of a range of processing interference when the positions of hidden marks or an edge of a segment are obtained by inputting and processing an image of the uncut lens by the apparatus for image processing, the obtained positions of the hidden marks or the edge of the segment, data of the spectacle frame and lens holder buildup area shape are processed and the lens holder is attached to the uncut lens.

Abstract: A finishing grindstone member (20) is fixed to a spindle (10) by a bolt. In the spindle (10), there is formed a tool mounting portion (25) into which a rough grindstone member can be mounted. Into the tool mounting portion (25), there can be mounted not only the rough grindstone member but also a cover member (36). After a silicone wafer is roughly ground using the rough grindstone member, when finish grinding the silicone wafer using the finishing grindstone member (20), the cover member (36) is mounted onto the tool mounting portion (25) to thereby prevent the tool mounting portion (25) from being soiled.

Abstract: The invention is an endface polishing method and an endface polishing apparatus improving polishing accuracy of an optical fiber and making polishing time and polishing work shorten. Polishing is performed making a boundary line center axis while observing the boundary line of brightness and darkness formed at outer circumference face of an optical fiber by irradiating substantial parallel light from the predetermined direction crossing at the right angle to the axis of the optical fiber in an endface polishing method polishing a tip end of the optical fiber held by a jig by a polishing member attached at a polishing disk in an apparatus providing the polishing disk supported by a main body of the apparatus and the jig holding the optical fiber.

Abstract: A lapping machine comprises a lapping surface plate (1) rotated by a rotating mechanism, a lapping jig (28) having a plurality of projections to bottom surfaces of which a work (30) to be lapped by a lapping surface on the lapping surface plate (1) is fitted, amount-of-projection adjusting elements (29) for adjusting the variation of the plurality of projections (28c) to the lapping surface plate (1) individually, and a control circuit (36) for outputting variation-of-projection control signals to the variation-of-projection adjusting elements (29).

Abstract: A modification to a chemical mechanical polishing conditioner of a type having a member with a conditioning surface adapted to apply a force to and condition a polishing pad. The conditioner includes at least one sensor disposed within the member, where the at least one sensor is adapted to sense at least one of an amount of the force applied to the polishing pad and a uniformity across the member of the force applied to the polishing pad. In this manner, the force applied by the conditioner to the pad, and the uniformity of the force applied by the conditioner to the pad, can be sensed. These sensed forces can be monitored, reported, and controlled, thus providing a better controlled chemical mechanical polishing process.

Abstract: A chemical mechanical polishing apparatus has a polishing surface, a carrier head to press a substrate against the polishing surface with a controllable pressure, a motor to generate relative motion between the polishing surface and the carrier head at a velocity, and a controller. The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.

Abstract: A method for polishing side faces of grooves formed on a workpiece includes a step of forming the grooves on the workpiece; a step of inserting a polishing element into one of the grooves, the width of the polishing element being smaller than that of the groove, by vertically moving at least one of the workpiece and the polishing element; a step of putting a main surface of the polishing element into contact with a side face of the groove by horizontally moving at least one of the workpiece and the polishing element; and a step of sliding the polishing element along the groove by moving at least one of the workpiece and the polishing element to polish the workpiece by relative movement between the workpiece and the polishing element and by urging the main surface of the polishing element toward the side face of the groove.

Abstract: An eyeglass lens processing apparatus for processing a periphery of an eyeglass lens, includes: a lens rotating shaft which holds and rotates an eyeglass lens to be processed; an abrasive wheel rotating shaft movable between a retracted position and a processing position; a chamfering abrasive wheel which is attached to the abrasive wheel rotating shaft and which chamfers the lens while receiving a processing load from the lens during processing; a detecting unit which detects the load to the chamfering abrasive wheel; and a control unit which issues a control signal for relatively moving the lens and the chamfering abrasive wheel one from another to reduce the processing load if the detected processing load is higher than a predetermined first level and for continuing the chamfering, and which issues a control signal for ending the chamfering if the detected processing load over the entire periphery of the lens is lower than a predetermined second level.

Abstract: A method for measuring the diameter and eccentricity of a crankpin of a crankshaft which is ground on a grinding machine. A reference plate is provided on a headstock, which is disposed on a table to support the crankshaft. A measurement apparatus having a probe is disposed on a wheel head. Through movements of the table and the wheel head, the probe is first brought into contact with a reference surface of the reference plate, and is then brought into contact with the outer circumferential surface of the crankpin at outermost and innermost points. The distances between the reference surface and the outermost and innermost points are measured, and the diameter and eccentricity of the crankpin are calculated on the basis of the measured distances and the position of the reference surface.

Abstract: Endpoint of a chemical mechanical polishing process is detected by monitoring acoustical emissions produced by contact between a polishing pad and a wafer. The acoustic information is resolved into a frequency spectrum utilizing techniques such as fast Fourier transformation. Characteristic changes in frequency spectra of the acoustic emissions reveal transition in polishing between different material layers. CMP endpoint indicated by a change in the acoustic frequency spectrum is validated by correlation with other sensed properties, including but not limited to time-based changes in amplitude of acoustic emissions, frictional coefficient, capacitance, and/or resistance. CMP endpoint revealed by a change in acoustic frequency spectrum can also be validated by comparison with characteristic frequency spectra obtained at endpoints or polishing transitions of prior operational runs.

Abstract: A method for monitoring a polishing condition of a surface of a wafer in a polishing process is provided, the method comprising providing a wafer (16) to be polished, the wafer (16) having at least one optically distinguishable feature (20) below a transparent or translucent layer (22) to be polished; selecting one or more of the features (20) for monitoring; measuring an optical contrast profile (62; 72; 82; 92) across one or more of the selected features (20); determining the polishing condition of the surface of the wafer (16) on the basis of the measured contrast profile (62; 72; 82; 92); and repeating the measuring the optical contrast profile (62; 72; 82; 92) and determining the polishing condition until a predetermined polishing condition is reached. A method for polishing wafers by a CMP polishing tool and apparatus for monitoring a polishing condition of a surface of a wafer (16) is also provided.

Abstract: The current positioning data of a machining tool with regard to a reference surface of a workpiece or of a body connected to the workpiece, is determined. The tool and the workpiece to be machined are relatively moveable toward and away from one another, and the rotary speed of a drive motor for the tool is set to a starting rotary speed which is so low that, when the tool comes into contact with the reference surface, its rotary speed is measurably reduced, the reference surface is moved past the tool before the tool is in contact and while the tool is in contact. As a result, the braking moments in the bearings are increased, and the drive motor comes to a stop quicker.

Abstract: A polishing method executes those serial processes described below: a theoretically ideal amount of removable object is computed; based on the comparison to the profile when actually processing a polishing object via a chemical-mechanical polishing process, a proportional constant k is sought, which is then utilized as a fixed value; a proper polishing time t is computed; the proper polishing time t is then input into a controller in conjunction with other parameters; by way of feeding a control signal CTL1 to an X-axis servo motor, the controller properly controls X-axis directional velocity of a polishing object; the controller also delivers another control signal CTL2 to a main-shaft spindle motor to control the number of its rotation and delivers another control signal CTL3 to a Z-axis servo motor to control Z-axial directional positioning of a processing head.

Abstract: A semiconductor wafer array comprising a plurality of wafers of semiconductor material. Each of the wafers is provided with cone-shaped or pyramid-shaped vias. Inserted in each of the vias is a correspondingly shaped wad of electrically conductive compliant material for forming continuous vertical electrical connections between the wafers in the stack. The base of each wad makes connection to a bonding pad on the surface of a lower wafer as well as to the electrically conductive compliant material in the lower wafer.