Glass Or Stone Abrading Patents (Class 451/41)
  • Patent number: 10967481
    Abstract: The present invention relates to a technical field of CMP pad manufacture, and more particularly to a CMP layer based on porous cerium oxide and a preparation method thereof. The CMP layer of the present invention is formed by mixing and curing a polyurethane prepolymer, a crosslinking agent and the porous cerium oxide, including steps of preheating the polyurethane prepolymer under vacuum, then adding a porous cerium oxide filler to the polyurethane prepolymer, and thoroughly mixing to obtain a mixed prepolymer; moving the mixed prepolymer to a first tank, and performing heat preservation, stirring, and circulation treatments; adding the crosslinking agent to a second tank and performing a melting treatment; correcting an injection weight ratio of the first tank and the second tank, then rapidly mixing, so as to inject into the mold; and then curing and vulcanizing to obtain the polishing layer.
    Type: Grant
    Filed: November 11, 2018
    Date of Patent: April 6, 2021
    Assignee: Hubei Dinghui Microelectronics Materials Co., LTD
    Inventor: Wentao Dan
  • Patent number: 10947414
    Abstract: A polishing composition for a chemical mechanical polishing process includes abrasive particles, at least one chemical additive, and a non-aqueous solvent.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fang-I Chih, Chih-Chieh Chang, Hui-Chi Huang, Kei-Wei Chen
  • Patent number: 10920105
    Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: February 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Hsuan Lee, Shen-Nan Lee, Chen-Hao Wu, Chun-Hung Liao, Teng-Chun Tsai, Huang-Lin Chao
  • Patent number: 10896822
    Abstract: A grinding apparatus includes a table that holds a workpiece, and a grinding unit including a grinding wheel mounted to a spindle. The grinding wheel has a grindstone formed by binding abrasive grains with a bonding agent. In addition, the grinding apparatus further includes: a grinding water supply unit that supplies grinding water to at least the grindstone; a light applying unit that is disposed adjacent to the table and that applies light to a grinding surface of the grindstone grinding the workpiece held by the table; and a light applying unit moving section by which the light applying unit can be positioned at a first position on a rotational trajectory of the grinding wheel in the case where the grinding wheel has a first diameter and a second position on a rotational trajectory of the grinding wheel in the case where the grinding wheel has a second diameter.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: January 19, 2021
    Assignee: DISCO CORPORATION
    Inventors: Kenji Takenouchi, Takayuki Gawazawa
  • Patent number: 10851267
    Abstract: Polishing compositions are disclosed which contribute to improvement of level difference performance (in particular, erosion). The polishing composition used for polishing an object to be polished includes abrasive grains and a dispersing medium, wherein the abrasive grains have an average primary particle size of 40 nm or less, and the number of coarse particles having a particle size of 0.2 to 1,600 ?m in the abrasive grains is 20,000 or less per 1 cm3 of the polishing composition.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: December 1, 2020
    Assignee: FUJIMI INCORPORATED
    Inventors: Yukinobu Yoshizaki, Youhei Takahashi
  • Patent number: 10850365
    Abstract: A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: December 1, 2020
    Assignees: SHIN-ETSU HANDOTAI CO., LTD., FUJIKOSHI MACHINERY CORP.
    Inventors: Michito Sato, Junichi Ueno, Kaoru Ishii, Yosuke Kanai, Yuya Nakanishi
  • Patent number: 10811368
    Abstract: According a method for manufacturing a semiconductor device of the present invention, a surface protection film having an elastic modulus of 2 GPa or more is formed on a first main surface of a semiconductor wafer where an element structure is formed, the semiconductor wafer is placed on a stage with the first main surface facing the stage, and a second main surface of the semiconductor wafer opposite to the first main surface is ground.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: October 20, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventor: Shunichi Watabe
  • Patent number: 10796921
    Abstract: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: October 6, 2020
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Hisataka Minami, Ryouta Saisyo, Jin Amanokura, Yuuhei Okada, Hiroshi Ono
  • Patent number: 10776729
    Abstract: A method for tracking containers. The method includes manufacturing containers, including forming the containers and serializing them with machine-readable codes. The method further includes using the machine-readable codes to store data associated with the containers, and supplying the containers to a customer. The method still further comprises receiving from the customer, data obtained from customer-readings of the machine-readable codes; and receiving from one or more the locations in a distribution chain in which the containers travel, data obtained from readings of the machine-readable codes at those locations. The method still further comprises comparing the data from the customer-readings and other readings or the machine-readable codes across product brands, product distribution channels, and/or container types, and providing the data to the customer.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: September 15, 2020
    Assignee: Owens-Brockway Glass Container Inc.
    Inventors: Roger P Smith, Chris D Anderson, Olivier Dangmann, Anthony R Caracciolo, Casey L Ingle
  • Patent number: 10777418
    Abstract: The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: September 15, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, I
    Inventors: John Vu Nguyen, Tony Quan Tran, Jeffrey James Hendron, Jeffrey Robert Stack
  • Patent number: 10759969
    Abstract: The present invention provides a polishing composition which is suitable for polishing an object to be polished having a layer containing a Group III-V compound, suppresses etching of the Group III-V compound, and is capable of polishing at a high polishing speed. The polishing composition according to the present invention is a polishing composition used for polishing an object to be polished having a layer containing a Group III-V compound and contains abrasive grains, an oxidizer, and an anionic surfactant.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: September 1, 2020
    Assignee: FUJIMI INCORPORATED
    Inventor: Masaki Tada
  • Patent number: 10759981
    Abstract: Provided is a method for polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing method comprises a step of carrying out preliminary polishing using a preliminary polishing composition that comprises an abrasive APRE and a step of carrying out final polishing using a final polishing composition that comprises an abrasive AFIN lower in hardness than the abrasive APRE.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: September 1, 2020
    Assignee: FUJIMI INCORPORATED
    Inventors: Shuhei Takahashi, Masatoshi Tomatsu
  • Patent number: 10710210
    Abstract: A method for forming semiconductor devices includes: grinding a backside of a semiconductor wafer with a grinding wheel during a first time interval, wherein the grinding wheel is forward moved during the first time interval, wherein a plurality of semiconductor devices are formed on the semiconductor wafer; polishing the backside of the semiconductor wafer with the grinding wheel in a second time interval, wherein the grinding wheel is backward moved during the second time interval; and dicing the semiconductor wafer to separate the plurality of semiconductor devices from each other without additional polishing of the backside of the semiconductor wafer before dicing the semiconductor wafer.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: July 14, 2020
    Assignee: Infineon Technologies AG
    Inventor: Rudolf Lehner
  • Patent number: 10703937
    Abstract: The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R1-R7, X, Y, and Z1-Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 7, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Alexei P. Leonov, Abhudaya Mishra
  • Patent number: 10651098
    Abstract: A method of controlling polishing includes storing a base measurement, the base measurement being a measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of an outer layer over the at least one layer, after deposition of the outer layer over the at least one layer and during polishing of the outer layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: May 12, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Tomohiko Kitajima, Jeffrey Drue David, Jun Qian, Taketo Sekine, Garlen C. Leung, Sidney P. Huey
  • Patent number: 10639021
    Abstract: Shapeable articles, kits including one or more of the shapeable articles, and methods of making and/or using the shapeable articles. The shapeable articles include a shapeable member that can be shaped or manipulated into three-dimensional shapes without the use of tools and hold those shapes after removal of the force required to achieve the shape. The shapeable articles could have a variety of uses including use as surgical retractors to move and/or restrain non-target tissue and/or organs to improve access to the target tissue and/or organs.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: May 5, 2020
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Ranjani V. Parthasarathy, Hannah C. Cohen, Haoming Rong, Amanda C. Engler, William Bedingham, Nicholas R. Powley, Korey W. Karls, Michael J. Vostal, Matthew T. Scholz, Michelle H. Stevens, Catherine D. Heapy
  • Patent number: 10640682
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: May 5, 2020
    Assignee: Rohm and Haas Electronics Materials CMP Holdings, Inc.
    Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee
  • Patent number: 10633557
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics is disclosed. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; xanthan gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; optionally a surfactant; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: April 28, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee
  • Patent number: 10633558
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alginate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: April 28, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee
  • Patent number: 10626298
    Abstract: Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: April 21, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Kwadwo E. Tettey, Matthew Van Hanehem
  • Patent number: 10622215
    Abstract: A cutting apparatus includes a line sensor unit that applies a laser beam in a band shape elongated in a radial direction of a wafer to a region inclusive of a peripheral portion of the wafer held on a chuck table, and detects reflected light, and an information calculation section that calculates the position of the wafer and the height of the front surface of the wafer from the reflected light of the laser beam detected by the line sensor unit in a state in which the chuck table is rotated before the wafer is cut to form a stepped portion, and that calculates the width and the height of the stepped portion from the reflected light of the laser beam detected by the line sensor unit after the wafer is cut to form the stepped portion.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: April 14, 2020
    Assignee: DISCO CORPORATION
    Inventors: Atsushi Komatsu, Kokichi Minato
  • Patent number: 10600634
    Abstract: Methods for polishing semiconductor substrates are disclosed. The finish polishing sequence is adjusted based on a measured edge roll-off of an analyzed substrate.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: March 24, 2020
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Alex Chu, Hsin-Yi Chi, Francis Hung, Jones Yang, H. J. Chiu, J. W. Lu
  • Patent number: 10589397
    Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: March 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
  • Patent number: 10532442
    Abstract: A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: January 14, 2020
    Assignees: SHIN-ETSU HANDOTAI CO., LTD., FUJIKOSHI MACHINERY CORP.
    Inventors: Michito Sato, Junichi Ueno, Kaoru Ishii, Hiromi Kishida, Yuya Nakanishi, Ryosuke Yoda, Yosuke Kanai
  • Patent number: 10525568
    Abstract: The wafer polishing system is disclosed. The wafer polishing system may comprise a polishing unit; a slurry distribution unit mounted on the polishing unit and distributing a slurry flowing into the polishing unit for wafer polishing; a slurry tank connected to the slurry distribution unit and storing the slurry; a slurry pump connected to the polishing unit and the slurry tank for transferring the slurry from the slurry tank to the polishing unit; a first circulation line in which one side is connected to the slurry tank; a second circulation line in which one side is connected to the other side of the first circulation line and the other side is connected to the slurry distribution unit; and a cleaning liquid supply unit connected to the second circulation line for supplying a cleaning liquid flowing through the second circulation line.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: January 7, 2020
    Assignee: SK SILTRON CO., LTD.
    Inventors: Seung Won Baek, Jae Pyo Lee
  • Patent number: 10525566
    Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: January 7, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., EHWA Diamond Industrial Co., Ltd.
    Inventors: Myung-ki Hong, Yung-jun Kim, Sung-oh Park, Hyo-san Lee, Joo-han Lee, Kyu-min Oh, Sun-gyu Park, Seh-kwang Lee, Chan-ki Yang
  • Patent number: 10522300
    Abstract: A metal foil with a karstified topography having a surface morphology in which a maximum peak height minus a maximum profile depth is greater than 0.5 ?m and extends into the surface at least 5% of the foil thickness, a root mean square roughness is at least about 0.2 ?m measured in a direction of greatest roughness, and an oxygen abundance is less than 5 atomic %. The foil may be composed of aluminum, titanium, nickel, copper, or stainless steel, or an alloy of any thereof, and may have a coating composed of nickel, nickel alloy, titanium, titanium alloy, nickel oxide, titanium dioxide, zinc oxide, indium tin oxide, or carbon, or a mixture or composite of any thereof. The foil may form part of a metal electrode, current collector, or electrochemical interface. Further described is a method for producing the foil by laser ablation in a vacuum.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: December 31, 2019
    Assignee: National Research Council of Canada
    Inventor: Dongfang Yang
  • Patent number: 10465097
    Abstract: The present invention provides chemical mechanical (CMP) polishing pads for polishing a substrate chosen from a semiconductor substrate comprising the CMP polishing pad and having one or more endpoint detection windows which is the cured product of a reaction mixture of a linear cycloaliphatic urethane macromonomer having two (meth)acrylate endgroups bound via cycloaliphatic dicarbamate esters to a polyether, polycarbonate or polyester chain having an average molecular weight of from 450 to 2,000, or an cycloaliphatic urethane oligomer thereof, and an aliphatic initiator, wherein the total isocyanate content in the urethane macromonomer ranges from 3.3 to 10 wt. %, and, further wherein, the composition comprises less than 5 wt. % of unreacted (meth)acrylate monomer and is substantially free of unreacted isocyanate. Regardless of their hardness or lack thereof, the endpoint detection windows provide excellent durability when wet.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: November 5, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Matthew R. Gadinski
  • Patent number: 10456886
    Abstract: Implementations disclosed herein generally relate to polishing articles and methods for manufacturing polishing articles used in polishing processes. More specifically, implementations disclosed herein relate to porous polishing pads produced by processes that yield improved polishing pad properties and performance, including tunable performance. Additive manufacturing processes, such as three-dimensional printing processes provides the ability to make porous polishing pads with unique properties and attributes.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: October 29, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sivapackia Ganapathiappan, Nag B. Patibandla, Rajeev Bajaj, Daniel Redfield, Fred C. Redeker, Mahendra C. Orilall, Boyi Fu, Mayu Yamamura, Ashwin Chockalingam
  • Patent number: 10449653
    Abstract: The present invention is a holding pad including a holding layer for holding a member to be polished, in which the holding layer includes on a part of a surface thereof a template fixing portion for sticking a template for preventing lateral displacement of the member to be polished, the template fixing portion has on a surface thereof an adsorption layer for adsorbing and fixing the template the template fixing portion, and the adsorption layer is formed of a composition which is formed by crosslinking a silicone composed of a predetermined siloxane.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: October 22, 2019
    Assignee: MARUISHI SANGYO CO. LTD.
    Inventors: Toshiyasu Yajima, Daisuke Ninomiya
  • Patent number: 10428240
    Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: October 1, 2019
    Assignee: KCTECH CO., LTD.
    Inventors: Jang Kuk Kwon, Chan Un Jeon, Ki Hwa Jung, Jung Yoon Kim, Nak Hyun Choi, Seong Pyo Lee, Bo Hyeok Choi
  • Patent number: 10414017
    Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: September 17, 2019
    Assignees: SHIN-ETSU HANDOTAI CO., LTD., FUJIKOSHI MACHINERY CORP.
    Inventors: Junichi Ueno, Michito Sato, Kaoru Ishii, Hiromi Kishida, Yosuke Kanai, Yuya Nakanishi
  • Patent number: 10418247
    Abstract: Polishing compositions comprising ceria coated silica particles offer minimal topography, reduced oxide and nitride losses, while providing high oxide polish rates. These formulations are especially useful for polishing large structures typically used in 3D NAND device manufacturing.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: September 17, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Krishna P. Murella, Hongjun Zhou, Dnyanesh Chandrakant Tamboli
  • Patent number: 10406652
    Abstract: The present invention provides a polishing composition with which differences in height of a SiN film can be sufficiently removed. The present invention is a polishing composition for use in polishing a polishing object having a surface which is positively charged at a pH of less than 6, containing water, abrasive grains, and an anionic copolymer having a specific unit structure, and having a pH of less than 6, wherein the anionic copolymer has at least two acidic groups having different acidities.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: September 10, 2019
    Assignee: FUJIMI INCORPORATED
    Inventor: Toshio Shinoda
  • Patent number: 10403321
    Abstract: A method for manufacturing a glass substrate according to which surface roughnesses of main surfaces of a glass substrate can be reduced more than with currently available methods is provided. After the main surfaces of the glass substrate used in a magnetic disk are mirror-polished (final finishing-polished) using a polishing liquid containing organic-based particles made of, for example, a styrene-based resin, an acrylic resin, or a urethane-based resin as polishing abrasive particles, by cleaning the glass substrate using an organic-based cleaning agent, surface roughnesses of the main surfaces of the substrate can be reduced more than with currently available methods.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: September 3, 2019
    Assignee: HOYA CORPORATION
    Inventor: Yoshihiro Tawara
  • Patent number: 10391605
    Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, addition polymer precursor compounds, catalysts, and curing agents.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: August 27, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sivapackia Ganapathiappan, Boyi Fu, Ashwin Chockalingam, Daniel Redfield, Rajeev Bajaj, Mahendra C. Orilall, Hou T. Ng, Jason G. Fung, Mayu Yamamura
  • Patent number: 10377014
    Abstract: A method, kit, and composition for polishing a sapphire surface are described here. The invention involves a sapphire surface polishing composition comprising colloidal silica particles and an extended or gemini surfactant that can reduce the contact angles of the polishing composition on both polishing pads and sapphire surfaces.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: August 13, 2019
    Assignee: Ecolab USA Inc.
    Inventors: Yvonne Marie Killeen, Amanda Ruth Blattner
  • Patent number: 10378149
    Abstract: The invention relates to a refiner plate segment in a refiner plate for mechanically refining of lignocellulosic material in a refiner, said refiner plate segment comprising at least a first, generally radially extending bar, a second, generally radially extending bar, a groove arranged and defined between said first, generally radially extending bar and said second, generally radially extending bar, and a main dam, which has a height H and is arranged in the groove, wherein a pre-dam is arranged in front of the main dam, said pre-dam has a height h which is less than the height H of the main dam.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: August 13, 2019
    Assignee: Valmet AB
    Inventor: Thommy Lindblom
  • Patent number: 10344187
    Abstract: Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 ?m/min can be achieved.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: July 9, 2019
    Assignees: NITTA HAAS INCORPORATED, SUMCO CORPORATION
    Inventors: Masashi Teramoto, Shinichi Ogata, Ryuichi Tanimoto
  • Patent number: 10337116
    Abstract: In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: July 2, 2019
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuki Sato, Motoki Hiraoka, Hirofumi Iisaka
  • Patent number: 10310373
    Abstract: A method for manufacturing a low-defect and high-quality mask blank substrate with minimized transfer pattern defects and high mechanical strength, particularly such that the occurrence of a phenomenon where a portion of a transfer pattern and a principal surface of the substrate therebeneath are broken off together is minimized such that there is little pattern loss. The mask blank is manufactured by preparing a mask blank substrate (X) having a substrate principal surface (X1) polished using a polishing solution containing abrasive grains, etching the substrate principal surface (X1) using catalyst-referred etching so as to remove damaged portions from the principal surface (X1), and then depositing a thin film that forms a transfer pattern on the substrate principal surface (X1) of the substrate (X) by sputtering.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: June 4, 2019
    Assignee: HOYA CORPORATION
    Inventors: Takeyuki Yamada, Takahito Nishimura
  • Patent number: 10300576
    Abstract: A polishing method including polishing to polish a surface of a wafer by sliding the wafer held by a polishing head on a surface of a polishing pad while supplying a polishing slurry to the polishing pad attached to a turntable, the method including correlation derivation to obtain a correlation between a surface temperature of the polishing pad and a haze level of a wafer polished with the use of the polishing pad in advance before performing the polishing, and also the wafer is polished in the polishing while controlling the surface temperature of the polishing pad based on the correlation between the surface temperature of the polishing pad and the haze level of the wafer polished with the use of the polishing pad. Consequently, the polishing method can control a haze in polishing a wafer and thereby prolong the service life of the polishing pad.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: May 28, 2019
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Masaaki Oseki, Michito Sato, Kaoru Ishii
  • Patent number: 10272538
    Abstract: An abrasive product with a concave-convex structure includes laminated three planar layers and an abrasive layer with a concave-convex structures located on an upper surface of the three planar layers. The abrasive layer with a concave-convex structure is an array of abrasive blocks, and a groove serving as chips discharging groove is formed between each two adjacent abrasive blocks. The abrasive block includes a binder and abrasive grains distributed in the binder.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: April 30, 2019
    Assignee: Beijing Grish Hitech Co., Ltd.
    Inventors: Bingli Guo, Feifei Sheng
  • Patent number: 10269893
    Abstract: A method for MOM capacitance value control is disclosed. The method comprises: S01: setting a target thicknesses for each metal layers; S02: after forming a current metal layer, measuring a thickness of the current metal layer; when the thickness of the current metal layer is equal to or less than a threshold value, then turning to step S03; S03: calculating multiple capacitance variations related to the current metal layer according to the thickness of the current metal layer; wherein each of the capacitance variation related to the current metal layer is between an actual capacitance value of a MOM capacitor combination associated with the current metal layer and a target capacitance value of the same MOM capacitor combination; S04: calculating updated target thicknesses for all subsequent metal layers according to the capacitance variations related to the current metal layer.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 23, 2019
    Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATION
    Inventors: Yeqing Cui, Ran Huang, Jianning Deng
  • Patent number: 10256120
    Abstract: In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: April 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Clinton P. Sakata, Hui Chen, Jim K. Atkinson, Brian J. Brown, Jianshe Tang, Yufei Chen, Yunshuang Ding
  • Patent number: 10210394
    Abstract: An apparatus being adapted to determine an occupancy in a designated area, said apparatus comprising a memory and a controller, said controller being configured to determine at least one passage time; wherein said passage time is a time for a detected passage into and/or out of said area based on said image stream, determine an average occupancy time, determine if a passage into said designated area is estimated to occupy the designated area by comparing the time for the passage with the average occupancy time, and determine an estimation of the present occupancy in the designated area to equal the number of such passages.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: February 19, 2019
    Assignee: COGNIMATICS AB
    Inventors: Karl Astrom, Marcus Johansson, Jonna Hellstrom, Hakan Ardo, Rikard Berthilsson
  • Patent number: 10195715
    Abstract: A chemical mechanical polishing machine includes a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body. The bottom surface of the membrane includes a hydrophobic area and a hydrophilic area.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-Kwon Kim, Kyung-Hyun Kim, Ki-Jong Park, Ki-Ho Bae, Jong-Heun Lim
  • Patent number: 10192757
    Abstract: A substrate cleaning apparatus capable of quickly removing cleaning liquid that has been used in cleaning of a substrate with a roll cleaning tool from the substrate. The substrate cleaning apparatus includes a substrate holder configured to hold and rotate a substrate; a cleaning-liquid supply nozzle configured to supply cleaning liquid onto a first region of the substrate; a roll cleaning tool configured to be placed in sliding contact with the substrate in the presence of the cleaning liquid to thereby clean the substrate; and a fluid supply nozzle configured to supply fluid, which is constituted by pure water or chemical liquid, onto a second region of the substrate. The second region is located at an opposite side of the first region with respect to the roll cleaning tool, and a supply direction of the fluid is a direction from a central side toward a peripheral side of the substrate.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: January 29, 2019
    Assignee: EBARA CORPORATION
    Inventor: Tomoatsu Ishibashi
  • Patent number: 10160092
    Abstract: Polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are also described.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: December 25, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul Andre Lefevre, William C. Allison, Alexander William Simpson, Diane Scott, Ping Huang, Leslie M. Charns, James Richard Rinehart, Robert Kerprich
  • Patent number: 10106705
    Abstract: The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R1-R7, X, Y, and Z1-Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: October 23, 2018
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Alexei P. Leonov, Abhudaya Mishra