Abstract: Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) 13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, a third peak appearing at 138 ppm to 143 ppm, and a fourth peak appearing at 55 ppm to 65 ppm, and the softening control index calculated by Equation 1 is 0.10 to 0.45. The polishing pad includes the polishing layer having physical properties corresponding to the softening control index, and thus may exhibit a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.

Abstract: A chemical-mechanical planarization equipment, comprising a polishing module, a cleaning module and a wafer transfer module, wherein the polishing module comprises two rows of polishing unit arrays, each row of polishing unit arrays comprises two or more sets of polishing units, polishing transfer stations corresponding to two rows of polishing unit arrays are longitudinally arranged and located in the row direction of the polishing unit arrays, and a working area of the wafer transfer module is located vertically above the longitudinally arranged polishing transfer stations.

Abstract: A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, and the second particles contain a cerium compound.

Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

Abstract: A substrate transfer apparatus transfers a substrate in a vacuum chamber. The substrate transfer apparatus includes an elevating robot, a travel robot and a transfer robot. The elevating robot includes an elevating plate through which through-holes are formed, and hollow elevating shafts, wherein each central axis of the hollow elevating shafts corresponds to each center of the through-holes, wherein the elevating robot is sealably coupled with a vacuum chamber through-hole. The travel robot includes a travel arm platform through which coupling holes are formed, wherein each of the hollow elevating shafts is inserted into each lower space of each of the coupling holes, a first travel arm part including a (1_1)-st and a (1_2)-nd travel link arms, second travel arm parts including a (2_1)-st and a (2_2)-nd travel link arms, and a transfer robot coupling part coupled with the (1_2)-nd and the (2_2)-nd travel link arms.

Abstract: Embodiments herein generally relate to chemical mechanical polishing (CMP) systems used in the manufacturing of electronic devices. In one embodiment, a substrate carrier for polishing a surface of a substrate includes a retaining ring configured to surround a substrate during a polishing process. The retaining ring includes a first surface that is configured to contact a surface of a polishing pad during the polishing process, a second surface that is on a side of the retaining ring that is opposite to the first surface, and an array of recesses formed in the second surface.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.

Abstract: A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.

Abstract: The present disclosure provides a semiconductor structure, including a first semiconductor device having a first surface and a second surface, the second surface being opposite to the first surface, a semiconductor substrate over the first surface of the first semiconductor device, and a III-V etch stop layer in contact with the second surface of the first semiconductor device. The present disclosure also provides a manufacturing method of a semiconductor structure, including providing a temporary substrate having a first surface, forming a III-V etch stop layer over the first surface, forming a first semiconductor device over the etch stop layer, and removing the temporary substrate by an etching operation and exposing a surface of the III-V etch stop layer.

Abstract: A polishing apparatus includes a support configured to receive and hold a substrate in a plane, a polishing pad affixed to a cylindrical surface of a rotary drum, a first actuator to rotate the drum about a first axis parallel to the plane, a second actuator to bring the polishing pad on the rotary drum into contact with the substrate, and a port for dispensing a polishing liquid to an interface between the polishing pad and the substrate.

Abstract: A method for polishing a diamond crystal includes preparing a diamond crystal having a main surface having a plane orientation of (100). Mechanical polishing is performed on the main surface using a polishing wheel such that: a tangent contacts a curve extending in a rotation direction of the wheel and contacting a contact position between the diamond crystal and the wheel that is rotating; and a tangent direction of the tangent at the contact position is within a range of ±10 degrees relative to a <110> direction of the diamond crystal, thereby causing an affected region to appear such that the affected region is parallel to a direction of a plane orientation (111) of the diamond crystal and penetrates the diamond crystal onto the main surface. Chemical mechanical polishing is performed on the main surface to remove the affected region, thereby removing the affected region from the main surface.

Abstract: A grinding method for grinding a workpiece includes a first grinding step of grinding the workpiece in such a manner that an outer circumferential part of the workpiece becomes thinner than a central part of the workpiece, a measurement step of measuring the thickness of the workpiece at the outer circumferential part, and a second grinding step of grinding the workpiece. In the second grinding step, the grinding is started from the central part of the workpiece and the grinding is ended when the workpiece reaches a finished thickness decided based on the thickness of the workpiece at the outer circumferential part measured in the measurement step.

Abstract: A membrane for a CMP carrier head includes a circular lower portion that provides a substrate mounting surface for a central region of a substrate, a first plurality of flaps that extend upward from the circular lower portion to form a plurality of inner chambers, an annular upper portion that provides a lower surface for applying pressure to an annular outer region of the substrate, and a second plurality of flaps that extend upward from the annular upper portion to form a plurality of independently pressurizable outer chambers. The annular upper portion surrounds the circular lower portion and is vertically offset from the circular lower portion such that the lower surface is positioned above a plane defined by the circular lower portion, and the annular upper portion is coupled to an outermost flap of the first plurality of flaps.

Abstract: A coated abrasive article comprising a backing, an adhesive layer disposed in a discontinuous distribution on at least a portion of the backing, wherein the discontinuous distribution comprises a plurality of adhesive contact regions and at least one shaped abrasive particle is disposed on a majority of each of the discrete adhesive contact regions, wherein at least 50% of the shaped abrasive particles comprise a predetermined side orientation and have a tilt angle of at least 45 degrees, wherein the shaped abrasive particles comprise a polycrystalline material and are free of binder, wherein the first plurality of discrete adhesive contact regions comprise a predetermined two-dimensional shape as viewed from above, and wherein each of the discrete contact regions comprises a length, a width, or a combination thereof that substantially corresponds to a dimension of the at least one abrasive particle.

Abstract: Disclosed are a wafer loading bracket, a wafer loading system and a wafer mounting method. The wafer loading bracket, which can lift, and a polishing head including a plurality of pressure medium cavities are used. In a wafer loading process, arc-shaped deformation occurs, under pressure, on an attachment film of the polishing head; a wafer on a wafer-bearing base of the wafer loading bracket is lifted to a loading position, and comes into contact with the attachment film, a pressure medium cavity which is in contact with the attachment film is vacuumized; and the wafer and the attachment film, under vacuum conditions, are attached to the polishing head, and the wafer is transferred to the polishing head to complete loading.

Abstract: Provided is a cutting method of cutting a workpiece by using a cutting apparatus including a chuck table configured to hold the workpiece and a cutting unit having a cutting blade configured to cut the workpiece held by the chuck table and an ultrasonic vibrator configured to ultrasonically vibrate the cutting blade in a radial direction of the cutting blade. The cutting method includes a holding step of holding the workpiece by the chuck table, and a cutting step of performing ultrasonic cutting that cuts the workpiece by the cutting blade vibrated ultrasonically and normal cutting that cuts the workpiece by the cutting blade not vibrated ultrasonically on the same cutting line of a plurality of cutting lines set on the workpiece.

Abstract: A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.

Abstract: A system includes a loader tool to load a plate to which a sandpaper sheet is to be affixed to a surface of the plate. The system includes a sandpaper affixing tool to remove a liner from the sandpaper sheet to expose an adhesive surface of the sandpaper sheet, and to affix the sandpaper sheet to the surface of the plate using the adhesive surface of the sandpaper sheet. The system includes a flatness detector to determine whether a surface of the sandpaper sheet is sufficiently flat after the sandpaper sheet is affixed to the surface of the plate. The system includes an unloader tool to store the plate after the sandpaper sheet is affixed to the surface of the plate.

Abstract: The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

Abstract: There is provided a processing method of grinding a workpiece. The processing method includes a holding step of holding the workpiece on a side of its front surface on a chuck table, a coarse grinding step of grinding the workpiece on a side of its back surface with first grinding stones until the workpiece has a predetermined thickness, an auxiliary grinding step of grinding the workpiece on the side of its back surface with the first grinding stones such that an unground region remains at an outer peripheral portion of the workpiece, an unground region grinding step of grinding the unground region with second grinding stones having an average abrasive grain size smaller than that of the first grinding stones, and a finish grinding step of grinding the workpiece on the side of its back surface with the second grinding stones until the workpiece has a predetermined finish thickness.

Abstract: A process for making anti-reflective optical glass comprises the steps of: A. implementing an abrading tool including a carrier having a plurality of diamond cutting wires formed on the carrier; and B. centrifugally and resiliently abrading a substrate of optical glass by the abrading tool to form a plurality of microscopic protuberances or moth-eye like structures on the substrate to thereby reduce the light reflection from the substrate and increase the light transmission in the substrate.

Abstract: A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. A suction system removes pad conditioner debris and the slurry from the pad.

Abstract: A method of generating a matrix to relate a plurality of controllable parameters of a chemical mechanical polishing system to a polishing rate profile includes polishing a test substrate. The test substrate is polished for a first period of time using baseline parameter values with a first parameter set to a first value, and the test substrate is polished for a second period of time using first modified parameter values with the first parameter set to a modified second value. A thickness of the test substrate is monitored during polishing, and a baseline polishing rate profile is determined for the first period of time and a first modified polishing rate profile is determined for the second period of time. The matrix is calculated based on the baseline parameter values, the first modified parameters, the baseline polishing rate profile and the first modified polishing rate profile.

Abstract: A substrate processing apparatus includes a substrate polishing unit 40 having a polishing pad for polishing a wafer W, and a top ring 41 for holding a wafer and pressing the wafer against the polishing pad. An elastic membrane 80 for holding a surface opposite to a polishing surface of the wafer W is attached to the top ring 41 as a consumable. The elastic membrane 80 is provided with a plurality of strain sensors 85 and 86 for measuring strain occurring in the elastic membrane 80 during polishing, and data of an amount of strain is read to a control device 15 by detection units 90 and 91. The control device 15 sets a processing condition such as a polishing recipe for the wafer W based on strain information of the elastic membrane 80 measured by the strain sensors.

Abstract: A substrate holding apparatus which can adjust polishing profile precisely is disclosed. The substrate holding apparatus includes an elastic membrane that forms a plurality of pressure chambers for pressing a substrate, and a head body to which the elastic membrane is coupled. The elastic membrane includes a contact portion to be brought into contact with the substrate for pressing the substrate against a polishing pad, an edge circumferential wall extending upwardly from a peripheral edge of the contact portion, and a plurality of inner circumferential walls arranged radially inwardly of the edge circumferential wall and extending upwardly from the contact portion. At least two adjacent inner circumferential walls of the plurality of inner circumferential walls include slope circumferential walls inclined radially inwardly. The slope circumferential walls are inclined radially inwardly in their entirety from their lower ends to upper ends, and extend upwardly.

Abstract: A manufacturing method of a wafer includes a first and a second resin-application grinding step, and a third surface-grinding step. The first step includes: a first formation step of forming a first coating layer; a first surface-grinding step of placing the wafer so that the first coating layer contacts a reference surface of a table and surface-grinding a first surface of the wafer; and a first removal step of removing the first coating layer. The second step includes: a second formation step of forming a second coating layer; a second surface-grinding step of placing the wafer so that the second coating layer contacts the reference surface and surface-grinding the second surface; and a second removal step of removing the second coating layer. In the third step, the wafer is placed so that the last surface-ground surface contacts the reference surface and a surface opposite the contacted surface is surface-ground.

Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: The present disclosure provides a fully automatic gemstone polishing robot. An aspect of the present disclosure provides an automatic gemstone polishing robot comprising: a gemstone polishing unit, comprising a gemstone holding unit for supporting a gemstone in contact with an abrasive surface, and configured to polish said gemstone in a plurality of iterations based on a feedback signal; an image capturing unit to capture, in one or more of the plurality of iterations, at least one image of the gemstone; and an image processing unit, which when executed by one or more processors, analyzes said at least one image of the gemstone with respect to one or a plurality of gemstone parameters, wherein the image processing unit is further configured to compare the one or a plurality of analyzed gemstone parameters with one or a plurality of pre-determined gemstone parameters to generate the feedback signal to be transmitted to the gemstone polishing unit.

Abstract: An as-sliced wafer processing method includes a grinding step of grinding a first surface of an as-sliced wafer, an outer periphery positioning step of moving a chuck table and a grinding unit relative to each other in directions parallel to a holding surface of the chuck table so as to position an edge on an outer periphery of grinding stones at an outer peripheral edge of the first surface after the grinding step is carried out, and a chamfering step of chamfering an outer periphery of the first surface of the as-sliced wafer by the grinding stones after the outer periphery positioning step is carried out.

Abstract: Implementations of a semiconductor substrate may include a wafer including a first side and a second side; and a support structure coupled to the wafer at a desired location on the first side, the second side, or both the first side and the second side. The support structure may include an organic compound.

Abstract: A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

Abstract: Provided is a wafer including a ring part and a processed part. The processed part is connected to the ring part. The processed part has a top surface which has been grounded and a bottom surface opposite to the top surface. The processed part is surrounded by the ring part. A region where the top surface connects to the ring part is a curved surface curved upwards.

Abstract: A chemical mechanical polishing system includes a steam generator with a heating element to apply heat to a vessel to generate steam, an opening to deliver steam onto a polishing pad, a first valve in a fluid line between the opening and the vessel, a sensor to monitor a steam parameter, and a control system. The control system causes the valve to open and close in accordance with a steam delivery schedule in a recipe, receive a measured value for the steam parameter from the sensor, receive a target value for the steam parameter, and perform a proportional integral derivative control algorithm with the target value and measured value as inputs so as to control the first valve and/or a second pressure release valve and/or the heating element such that the measured value reaches the target value substantially just before the valve is opened according to the steam delivery schedule.

Abstract: A surface-treating article, comprising a circular substrate (100) comprising a first major surface, an abrasive disposed on the first major surface, the abrasive having a first concentration at a first radius (110) measured from the center of the substrate, the abrasive having a second concentration not equal to the first concentration at a second radius (120) measured from the center of the substrate, wherein the first radius (110) and the second radius (120) are different lengths.

Abstract: A chemical mechanical polishing system includes a steam generator with a heating element to apply heat to a vessel to generate steam, an opening to deliver steam onto a polishing pad, a first valve in a fluid line between the opening and the vessel, a sensor to monitor a steam parameter, and a control system. The control system causes the valve to open and close in accordance with a steam delivery schedule in a recipe, receive a measured value for the steam parameter from the sensor, receive a target value for the steam parameter, and perform a proportional integral derivative control algorithm with the target value and measured value as inputs so as to control the first valve and/or a second pressure release valve and/or the heating element such that the measured value reaches the target value substantially just before the valve is opened according to the steam delivery schedule.

Abstract: The present invention discloses a wafer polishing device, which comprises a second pressure medium cavity for detecting pressure changes; a porous disc with a plurality of through holes, and its lower surface is covered with a flexible single cavity film; a conduction valve unit for conduction or isolation between the second pressure medium cavity and the third pressure medium cavity, which at least includes a conduction valve seat, a conduction valve and an elastic part. The lower end of the conduction valve seat extends into the through hole, and protrudes from the lower end face of the conduction valve seat; The conduction valve seat, the porous disc and the covered flexible single cavity membrane combined to form the third pressure medium cavity; a first pressure medium cavity.

Abstract: A die bonding system comprising a wafer lift and level assembly configured to allow rapid planarization of a wafer comprising a wafer frame configured to retain a wafer and be slidably retained within guide clevises and a leveling pedestal configured to support a wafer from below in a localized area where a die bonding operation is to take place, allowing the quick and repeatable planarization of die(s) to the wafer without the need for distinct planarization procedures that would slow cycle times and decrease production.

Abstract: A machine for working glass slabs includes a supporting structure, a slab grinding section having grinding heads, a conveyor assembly adapted to move the glass slab, and a slab drilling section having a conveyor adjacent to the conveyor assembly. The slab grinding section has suckers for keeping the glass slab next to a working plane spaced and/or offset with respect to the advancement plane, and a computerized numeric control assembly to perform workings on the glass slab.

Abstract: The polishing apparatus includes: a polishing table configured to support a polishing pad having a polishing surface; a rotatable head body having a pressing surface; a retainer ring configured to press the polishing surface and rotatable together with the head body; a rotary ring; a stationary ring; and local-load exerting devices each configured to apply a local load to the stationary ring. The local-load exerting devices include a first pressing member and a second pressing member coupled to the stationary ring. The first pressing member is arranged at an upstream side of the retainer ring in a moving direction of the polishing surface, and the second pressing member is arranged at a downstream side of the retainer ring in the moving direction of the polishing surface.

Abstract: A method for selecting a template assembly includes: preparing a template assembly in which a template is concentrically attached on a base ring or a base plate having a larger outer diameter than the template, the template having a back pad to hold a workpiece back surface and a retainer ring positioned on the back pad and to hold an edge portion of the workpiece; non-destructively measuring a height position distribution of the retainer ring and the back pad on the template side of the template assembly, where an outer peripheral edge surface of the base ring or the base plate serves as a reference surface; calculating a flatness of the retainer ring and an average amount of step differences between the retainer ring and the back pad from the measured height position distribution; and selecting the template assembly based on the flatness and the average amount of step differences.

Abstract: A substrate processing method includes polishing a target surface of a substrate to be polished by moving a polishing brush in a horizontal direction while pressing the polishing brush against the polishing target surface of the substrate which rotates in a horizontal posture around a vertical axis. The polishing is performed while varying a rotation speed of the substrate and a moving speed of the polishing brush such that the rotation speed of the substrate decreases stepwise or continuously and the moving speed of the polishing brush in a radial direction of the substrate decreases stepwise or continuously as a distance from a center of rotation of the substrate measured in the radial direction of the substrate to a center of the polishing brush increases.

Abstract: A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, a plurality of segments disposed circumferentially around the substrate mounting surface to provide a collet retaining ring to surround a substrate mounted on the substrate mounting surface, and an outer ring that is vertically movable relative to the plurality of segments. An inner surface of the collet retaining ring is configured to engage a substrate, and the collect retaining ring and outer ring are configured such that vertical motion of the outer ring controls motion of the collet retaining ring between a clamping and unclamping position.

Abstract: A method for repairing an at least externally coated hollow component. The direct mechanical machining of a coated component after use removes the need for a coating-removal and selective hollowing step and a selective repair of cracks, since a design adaptation leads to a component being engineered or used such that it can be used again as a result of external dimensional stipulations.

Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions.

Abstract: The present disclosure provides a retaining ring for polishing a wafer by a slurry. The retaining ring includes a ring-shaped main body and a plurality of guiding elements. The main body has an outer surface, an inner surface, and an inner space for accommodating the wafer. The main body includes a plurality of channels configured to allow the slurry to flow into the inner space from the outer surface. The plurality of guiding elements is disposed at the outer surface of the main body with respect to the plurality of channels. Each of the guiding elements forms a slurry capture area with the main body to guide the slurry towards each of the respective channels.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 ?m rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

Abstract: The invention relates to a grinding machine, which is suitable for a robot-supported grinding process. According to one embodiment, the grinding machine has a housing, a motor arranged in the interior of the housing, a fan wheel arranged on a motor shaft of the motor in the interior of the housing, and a support plate coupled to the motor shaft for receiving a grinding disc. The support plate has openings for intake of grinding dust into the interior of the housing. The grinding machine furthermore has an outlet arranged in a wall of the housing for exhausting the grinding dust out of the interior of the housing and a non-rerun valve arranged in the wall of the housing. The non-return valve enables an to escape from the interior of the housing, but prevents intake of air into the interior of the housing.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.