Glass Or Stone Abrading Patents (Class 451/41)
  • Patent number: 9796881
    Abstract: A polishing composition contains abrasive grains and water. 50% by mass or more of the abrasive grains consists of particles A having particle sizes between 40 nm and 80 nm inclusive, and 10% by mass or more of the abrasive grains consists of particles B having particle sizes between 150 nm and 300 nm inclusive. The polishing composition is used to polish a surface of a compound semiconductor substrate.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: October 24, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Masayuki Serikawa, Tomomi Akiyama
  • Patent number: 9790401
    Abstract: The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and forming a precipitate, and washing abrasive particles synthesized by precipitation.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: October 17, 2017
    Assignee: UBMATERIALS INC.
    Inventor: Jin Hyung Park
  • Patent number: 9761442
    Abstract: A method for forming a water-soluble resin film on a wafer having a plurality of devices thereon. The wafer is supported through an adhesive tape to an annular frame. The method includes removing the resin scattered onto the surface of the frame in forming the film on the wafer held on a spinner table, and this step further includes: rotating the spinner table; positioning a water nozzle above the frame held on the spinner table, supplying water from the nozzle to the frame, positioning an air nozzle adjacent to the water nozzle on the downstream side thereof in the rotational direction of the spinner table, and supplying air from the air nozzle against the flow of the water on the frame, whereby the water is forced to temporarily stay on the surface of the frame by the air supplied and is then expelled outward of the frame.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: September 12, 2017
    Assignee: DISCO CORPORATION
    Inventors: Taku Iwamoto, Hiroto Yoshida, Junichi Kuki
  • Patent number: 9761561
    Abstract: Semiconductor devices and methods of forming a semiconductor device are disclosed. The device includes a wafer with top and bottom surfaces. The wafer includes edge and non-edge regions. The wafer includes a plurality of devices and partially processed TSV contacts disposed in the non-edge region and a groove disposed at the edge region. The groove enables edges of the wafer to be automatically trimmed off as the wafer is subject to a back-grinding planarization process to expose the TSV contacts in the non-edge region of the wafer.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: September 12, 2017
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Ranjan Rajoo, Kai Chong Chan
  • Patent number: 9731398
    Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: August 15, 2017
    Assignees: Rohm and Haas Electronic Materials CMP Holding, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Raymond L. Lavoie, Jr., Marty W. DeGroot, Benson Lee
  • Patent number: 9728217
    Abstract: A glass substrate for use as a magnetic disk for heat assisted magnetic recording can restrain the occurrence of scratches when a magnetic head is in operation. The glass substrate for the magnetic disk includes a principal face on which an arithmetic average waviness Wa of a wavelength band of 1 to 3 mm is 2.15 ? or less.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: August 8, 2017
    Assignees: HOYA GLASS DISK VIETNAM II LTD., HOYA CORPORATION
    Inventors: Masayoshi Yoshida, Masahiro Katagiri
  • Patent number: 9708735
    Abstract: A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10?3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than ?10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.
    Type: Grant
    Filed: June 18, 2012
    Date of Patent: July 18, 2017
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiji Ishibashi, Yusuke Yoshizumi, Shugo Minobe
  • Patent number: 9687955
    Abstract: A polishing apparatus includes a table rotating motor configured to rotate a polishing table about its own axis, a top ring rotating motor configured to rotate a top ring about its own axis, a dresser configured to dress a polishing pad, and a pad-height measuring device configured to measure a height of the polishing pad. The polishing apparatus also includes a diagnostic device configured to calculate an amount of wear of the polishing pad from the height of the polishing pad and to determine the end of a life of the polishing pad based on the amount of the wear of the polishing pad, the torque or current of the table rotating motor, and the torque or current of the top ring rotating motor.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: June 27, 2017
    Assignee: EBARA CORPORATION
    Inventors: Katsuhide Watanabe, Masakazu Ihara
  • Patent number: 9682457
    Abstract: The present invention relates to a composite polishing pad and a method for making the same. The composite polishing pad includes a cushion layer and a polishing layer. The cushion layer includes a first polymeric elastomer with a hardness of 10 to 70 shore D, and is attached to the polishing layer directly. The polishing layer includes a second polymeric elastomer with a hardness of 30 to 90 shore D, and has a polishing surface for polishing a workpiece. Whereby, the polishing layer will not peel off from the cushion layer easily, so that the polishing quality is raised.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: June 20, 2017
    Assignee: SAN FANG CHEMICAL INDUSTRY CO., LTD.
    Inventors: Chung-Chih Feng, I-Peng Yao, Wen-Chieh Wu, Yung-Chang Hung
  • Patent number: 9676966
    Abstract: To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: June 13, 2017
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Haruki Nojo, Akitoshi Yoshida, Hirofumi Kashihara, Pascal Berar
  • Patent number: 9666496
    Abstract: A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid including luminescent particles capable of generating a fluorescent light in response to a light incident on the article, and detecting an intensity of the fluorescent light. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventor: I-Shuo Liu
  • Patent number: 9633865
    Abstract: The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.
    Type: Grant
    Filed: February 22, 2008
    Date of Patent: April 25, 2017
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Terence M. Thomas, Hongyu Wang
  • Patent number: 9611406
    Abstract: A polishing composition of the present invention contains abrasive grains each having a surface with protrusions. Parts of the abrasive grains have larger particle diameters than the volume-based average particle diameter of the abrasive grains, and the average of values respectively obtained by dividing a height of each protrusion on the surface of each abrasive grain belonging to the parts of the abrasive grains by the width of a base portion of the same protrusion is 0.170 or more. Protrusions on the surfaces of abrasive grains belonging to the parts of the abrasive grains that have larger particle diameters than the volume-based average particle diameter of the abrasive grains have an average height of 3.5 nm or more. The polishing composition has a content of an organic alkali of 100 mmol or less per kilogram of the abrasive grains in the polishing composition.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: April 4, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Kazusei Tamai, Keiji Ashitaka, Shogo Tsubota
  • Patent number: 9604346
    Abstract: A coated abrasive article including a plurality of shaped abrasive particles overlying a backing, the coated abrasive article having a plain-carbon steel grinding lifespan of at least about 5500 g/in.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: March 28, 2017
    Assignee: SAINT-GOBAIN CERMAICS & PLASTICS, INC.
    Inventors: Kristin Breder, Sujatha Iyengar, Christopher Arcona, Anthony C. Gaeta
  • Patent number: 9604339
    Abstract: Hard-material, flat-surfaced workpieces such as semiconductor wafers or sapphire disks are attached with vacuum to the flexible elastomeric membrane of a rotatable wafer carrier that allows one surface of the workpiece to be in conformal abrading contact with a moving flat-surfaced abrasive. The elastomeric membrane external wafer attachment surface has a pattern of recessed vacuum grooves where vacuum supplied to the grooves firmly attach the rigid-material silicon wafer in flat-surfaced contact with the membrane. The attached wafer seals the vacuum grooves. A flexible thin metal annular membrane support disk is attached to the membrane within an abrading-pressure chamber where attached drive pins engage matching holes in the wafer carrier provide rotational torque to the wafer and restrain it laterally against abrading forces. Wafer polishing pressure is applied uniformly over the wafer surface. The rotating wafer peripheral edge does not contact a rigid retaining ring during a wafer polishing procedure.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: March 28, 2017
    Inventors: Wayne O. Duescher, Cameron M. Duescher
  • Patent number: 9573242
    Abstract: A method of controlling polishing includes polishing a substrate of a non-metallic layer undergoing polishing and a metal layer underlying the non-metallic layer; storing a metal reference spectrum, the metal reference spectrum being a spectrum of light reflected from a same metal material as the metal layer; measuring a sequence of raw spectra of light reflected from the substrate during polishing with an in-situ optical monitoring system; normalizing each raw spectrum in the sequence of spectra to generate a sequence of normalized spectra, of which normalizing includes a division operation where the measured spectrum is in the numerator and the metal reference spectrum is in the denominator; and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of normalized spectra.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: February 21, 2017
    Assignee: Applied Materials, Inc.
    Inventor: Jeffrey Drue David
  • Patent number: 9558920
    Abstract: A fiber-end surface structuring chamber or system having a main body with multiple ports including a fiber-holder port, a process port that is either a stamp/shim holder port or a plasma etching enabler port, an evacuation port, a gas delivery port, and one or more observation ports, where the fiber-end surface structuring system forms structures directly into the end of the fiber to enhance transmission of light over a wide range of wavelengths and increase the laser damage threshold.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: January 31, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jasbinder S. Sanghera, Catalin M. Florea, Ishwar D. Aggarwal, Leslie Brandon Shaw, Lynda E. Busse, Frederic H. Kung
  • Patent number: 9551567
    Abstract: Among other things, a machine based method includes representing a plurality of spectra reflected from one or more substrates at a plurality of different positions on the one or more substrates in the form of a first matrix; decomposing, by one or more computers, the first matrix into products of at least two component matrixes of a first set of component matrixes; reducing dimensions of each of the at least two component matrixes to produce a second set of component matrixes containing the at least two matrixes with reduced dimensions; and generating, by the one or more computers, a second matrix by taking a product of the matrixes of the second set of component matrixes.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: January 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey Drue David, Boguslaw A. Swedek, Benjamin Cherian
  • Patent number: 9550264
    Abstract: Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: January 24, 2017
    Assignee: SUMCO CORPORATION
    Inventors: Tomohiro Hashii, Yuichi Kakizono, Yoshiaki Kurosawa
  • Patent number: 9539693
    Abstract: A polishing pad has a polishing layer that is formed of a polyurethane foam having fine cells. The polyurethane foam is a reaction cured body of a chain extender and an isocyanate-terminated prepolymer which is obtained by reacting a prepolymer starting material composition that contains an isocyanate component, a high molecular weight polyol and an aliphatic diol. The high molecular weight polyol contains a polyalkylene glycol A that has a peak of the molecular weight distribution within the range of 200 to 300 and a polyalkylene glycol B that has a peak of the molecular weight distribution within the range of 800 to 1200.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: January 10, 2017
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
    Inventor: Hiroshi Seyanagi
  • Patent number: 9539695
    Abstract: Carriers suitable for receiving one or more semiconductor wafers for the machining thereof in lapping, grinding or polishing machines, comprise a core of a first material which has a high stiffness, the core being completely or partly coated with a second material, and also at least one cutout for receiving a semiconductor wafer, wherein the second material is a thermoset polyurethane elastomer having a Shore A hardness of 20-90. The carriers are preferably coated with the second material after chemical surface activation and application of adhesion promoter, and may be used for simultaneous double-side material-removing machining of a plurality of semiconductor wafers.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: January 10, 2017
    Assignees: Siltronic AG, Peter Wolters GmbH
    Inventors: Georg Pietsch, Michael Kerstan, Heiko aus dem Spring
  • Patent number: 9533395
    Abstract: A method of conditioning a surface of a polishing pad is used for conditioning a polishing pad on a polishing table for polishing a thin film formed on a surface of a substrate. The conditioning method includes bringing a dresser into contact with the polishing pad, and conditioning the polishing pad by moving the dresser between a central part of the polishing pad and an outer circumferential part of the polishing pad. A moving speed of the dresser at a predetermined area of the polishing pad is higher than a standard moving speed of the dresser at the predetermined area of the polishing pad.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: January 3, 2017
    Assignee: EBARA CORPORATION
    Inventors: Mutsumi Tanikawa, Takahiro Shimano
  • Patent number: 9505166
    Abstract: A rectangular substrate is used as a mold after it is provided with a topological pattern. The substrate has A-side and B-side opposed surfaces, the A-side surface being provided with the topological pattern. The A-side surface includes a central rectangular region of 1 to 50 mm by 1 to 50 mm having a flatness of up to 350 nm. Use of the mold-forming substrate prevents the occurrence of a pattern misalignment or pattern error between the step of forming a pattern on a mold-forming substrate and the transfer step. Transfer of a fine size and complex pattern is possible.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: November 29, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daijitsu Harada, Daiyu Okafuji, Hiroyuki Yamazaki, Masaki Takeuchi
  • Patent number: 9490157
    Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: November 8, 2016
    Assignee: TOKAI CARBON CO., LTD.
    Inventors: Jitendra S. Goela, Michael A. Pickering, James T. Fahey, Melinda S. Strickland
  • Patent number: 9463551
    Abstract: Disclosed is a polishing pad for chemical-mechanical polishing. The polishing pad has a porous interface and a substantially non-porous bulk core. Also disclosed are related apparatus and methods for using and preparing the polishing pad.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: October 11, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Robert Vacassy, George Fotou
  • Patent number: 9437235
    Abstract: The present invention relates to a method for manufacturing a glass substrate for an information recording medium having a high level of cleanness and superior smoothness. The manufacturing method includes a step for washing a disk-shaped glass plate with an acid washing liquid, a step for removing at least part of a surface layer, which is formed on the surface of the glass plate, by performing grinding with diamond abrasion grains, and a step for washing the surface with a neutral or alkaline washing liquid.
    Type: Grant
    Filed: November 23, 2015
    Date of Patent: September 6, 2016
    Assignee: HOYA CORPORATION
    Inventors: Yasuhiro Saito, Toshiaki Hashimoto, Yuriko Kudoh
  • Patent number: 9421669
    Abstract: A polishing pad, an apparatus for chemical mechanical polishing of semiconductor wafers and a method of making a device using the same are presented. The apparatus includes a first platform for mounting a semiconductor wafer; a second platform for mounting a polishing pad; a rotator for rotating the wafer against the polishing pad; and a diamond dresser for dressing the polishing pad. The polishing pad has a single groove of a width (w) surrounding the periphery of an undressed portion of the polishing pad thus eliminating contact of the undressed portion with the outer edge of the diamond dresser.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: August 23, 2016
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventor: Wee Yang Ong
  • Patent number: 9415479
    Abstract: A polishing pad for polishing a substrate. The pad comprises a layer of material having an upper polishing surface and a lower surface interfacing with a proximate platen, the material comprising a mixture of a conductive polymer distributed in a structure of a dielectric polymeric material using predetermined relationships. Additional embodiments provide a pad having a layer of dielectric polymeric material with an upper polishing surface and a lower surface interfacing with a proximate platen. A first set of grooves filled with a conductive polymer extends from the upper polishing surface to the lower surface, the first set of grooves filled with a conductive polymer. A second set of shallower grooves provide for slurry flow over the upper polishing surface. The first and/or second set of grooves are provided in a predetermined pattern.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: August 16, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chang-Sheng Lin, Hsin-Hsien Lu
  • Patent number: 9403255
    Abstract: A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface, a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: August 2, 2016
    Assignee: Ebara Corporation
    Inventors: Makoto Fukushima, Hozumi Yasuda, Keisuke Namiki, Osamu Nabeya, Shingo Togashi, Satoru Yamaki
  • Patent number: 9385316
    Abstract: The present disclosure relates to a resistance random access memory (RRAM) device architecture where a Ti metal capping layer is deposited before the deposition of the HK HfO resistance switching layer. Here, the capping layer is below the HK HfO layer, and hence no damage will occur during the top RRAM electrode etching. The outer sidewalls of the capping layer are substantially aligned with the sidewalls of the HfO layer and hence any damage that may occur during future etching steps will happen at the outer side walls of the capping layer that are positioned away from the oxygen vacancy filament (conductive filament) in the HK HfO layer. Thus the architecture in the present disclosure, improves data retention.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: July 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Wen Liao, Wen-Ting Chu, Tong-Chern Ong
  • Patent number: 9375823
    Abstract: CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: June 28, 2016
    Assignee: NexPlanar Corporation
    Inventors: Robert Kerprich, Karey Holland, Diane Scott, Sudhanshu Misra
  • Patent number: 9368452
    Abstract: The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: June 14, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Soon-Kang Huang, Han-Hsin Kuo, Chi-Ming Yang, Shwang-Ming Jeng, Chin-Hsiang Lin
  • Patent number: 9358660
    Abstract: A grinding wheel includes a base disk, and a plurality of teeth protruding beyond a surface of the base disk. The plurality of teeth is aligned to an elongated ring encircling a center of the grinding wheel.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: June 7, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsing Su, Jing-Cheng Lin, Tsei-Chung Fu, Wen-Hua Chang, Yi-Chao Mao
  • Patent number: 9352440
    Abstract: A method of controlling polishing includes polishing a substrate having a second layer overlying a first layer, detecting exposure of the first layer with an in-situ monitoring system, receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing, measuring a sequence of spectra of light from the substrate while the substrate is being polished, determining a first value for the characteristic of the feature at the time that the first in-situ monitoring technique detects exposure of the first layer, adding an offset to the first value to generate a second value, and monitoring the characteristic of the feature and halting polishing when the characteristic of the feature is determined to reach the second value.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: May 31, 2016
    Assignee: Applied Materials, Inc.
    Inventor: Jeffrey Drue David
  • Patent number: 9343330
    Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: May 17, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic, Renjie Zhou, Paul Feeney, Christopher Thompson
  • Patent number: 9339912
    Abstract: An embodiment wafer polishing tool includes an abrasive tape, a polish head holding the abrasive tape, and a rotation module. The rotation module is configured to rotate a wafer during a wafer polishing process, and the polish head is configured to apply pressure to the abrasive tape toward a first surface of the wafer during the wafer polishing process.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 17, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Wei-Jen Lo, Ying-Lang Wang
  • Patent number: 9333621
    Abstract: A polishing pad has a polishing layer with a polishing surface and a back surface. A plurality of grooves are formed on the polishing surface, and an indentation is formed in the back surface of the polishing layer. A region on the polishing surface corresponding to the indentation in the back surface is free of grooves or has shallower grooves.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: May 10, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Boguslaw A. Swedek, Manoocher Birang
  • Patent number: 9332062
    Abstract: A method and arrangement for handling document requests in a communication services network. When a first document server (200) receives (2:1) a request for a first service document from a requesting party (200), the requested first service document (Doc 1) is retrieved (2:2), which comprises a reference (ref) to service related information in a second service document (Doc 2). The first document server (200) then fetches (2:3) said service related information (list) in the second service document using the information reference, and aggregates (2:4) the fetched service related information with the first service document. The first document server (200) finally returns (2:5) the first service document together with the aggregated service related information (Doc 1?) to the requesting party in response to the received document request. Thereby, the requesting party is not forced to request for more documents than the first service document to obtain the needed information.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: May 3, 2016
    Assignee: TELEFONAKTIEBOLAGET L M ERICSSON
    Inventors: Anders Lindgren, Christer Boberg, Mikael Klein, Sofie Lassborn
  • Patent number: 9324558
    Abstract: A surface of a semiconductor wafer is subjected to high flattening processing. A resin application and grinding step is repeatedly carried out, the step including determining as a reference surface a flat surface obtained by applying a curable material to one entire surface of a wafer sliced out from a semiconductor single crystal ingot with the use of a wire saw apparatus and performing surface grinding with respect to the other surface of the wafer, and determining as a reference surface the other surface of the wafer subjected to the surface grinding and performing the surface grinding with respect to the one surface of the wafer.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: April 26, 2016
    Assignee: SUMCO CORPORATION
    Inventors: Toshiyuki Tanaka, Yasuyuki Hashimoto, Tomohiro Hashii
  • Patent number: 9314897
    Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 5.5 to 9.5 wt % unreacted NCO groups, wherein the isocyanate terminated urethane prepolymer is a reaction product of ingredients comprising: an aromatic polyfunctional isocyanate; and, a prepolymer polyol; and, a curative system, comprising: 0 to 90 wt % of a difunctional curative; and, 10 to 100 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: April 19, 2016
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Bainian Qian, Marty W. DeGroot
  • Patent number: 9305851
    Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization on an article includes a polishing head configured to perform a chemical-mechanical planarization (CMP) on an article, a polishing pad configured to support the article, a light source configured to emit an incident light, a polishing fluid including a plurality of emitter particles capable of emitting a fluorescent light in response to the incident light, a fluorescence light detector configured to detect the fluorescent light, and at least one processor configured to control the polishing head based on the detected fluorescent light.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: April 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: I-Shuo Liu, Hui-Chi Huang, Jung-Tsan Tsai, Chien-Ping Lee
  • Patent number: 9299573
    Abstract: Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: March 29, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Kouji Mishima, Masato Fukasawa, Masaya Nishiyama
  • Patent number: 9296083
    Abstract: A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: March 29, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Dai Fukushima, Jun Takayasu, Takashi Watanabe
  • Patent number: 9296088
    Abstract: In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: March 29, 2016
    Assignee: Araca Inc.
    Inventors: Leonard John Borucki, Yasa Adi Sampurno, Ara Philipossian
  • Patent number: 9278429
    Abstract: An abrasive article includes a substrate comprising an elongated body, a tacking layer comprising tin overlying the substrate, and a first type of abrasive particle comprising an agglomerated particle overlying the tacking layer.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: March 8, 2016
    Assignees: Saint-Gobain Abrasives, Inc., Saint-Gobain Abrasifs
    Inventors: Paul W. Rehrig, Yinggang Tian, Arup K. Khaund, Srinivasan Ramanath, Mary J. Puzemis, John Pearlman
  • Patent number: 9279067
    Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: March 8, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventor: Brian Reiss
  • Patent number: 9275917
    Abstract: In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: March 1, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
  • Patent number: 9272386
    Abstract: A polishing head for a chemical-mechanical polishing system includes a carrier head, at least one electromagnetism actuated pressure sector and a membrane. The electromagnetism actuated pressure sector is disposed on the carrier head. The membrane covers the electromagnetism actuated pressure sector.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: March 1, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shich-Chang Suen, Chin-Hsiang Chan, Liang-Guang Chen, Yung-Cheng Lu
  • Patent number: 9266220
    Abstract: An abrasive article including a bonded abrasive body having a bond material made of a vitrified material, abrasive particles comprising a first type of superabrasive material contained in the bond material, a porosity of at least about 50 vol % of the total volume of the bonded abrasive body, and a ?CTE of not greater than about 5.5 ppm/° C., wherein ?CTE is defined as a difference between a CTE of the bond material and a CTE of the abrasive particles.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: February 23, 2016
    Assignees: SAINT-GOBAIN ABRASIVES, INC., SAINT-GOBAIN ABRASIFS
    Inventors: Shivshankar Sivasubramanian, Srinivasan Ramanath, Ramanujam Vedantham, Rachana Upadhyay, Signo Reis
  • Patent number: 9261191
    Abstract: An object of the present invention is to provide a piston ring for an internal combustion engine capable of preventing aluminum cohesion for a long time under high temperature and high load conditions. Specifically, a piston ring 1 for the internal combustion engine including a piston ring base material 11 coated with an aluminum cohesion resistant film 12, wherein the aluminum cohesion resistant film 12 is made of ceramics coated on at least one of an upper side face 11a and a lower side face 11b of the piston ring base material 11.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: February 16, 2016
    Assignee: KABUSHIKI KAISHA RIKEN
    Inventors: Hayato Sasaki, Takashi Ono